CN107690695A - 用于制造包括用于俘获电荷的层的半导体元件的工艺 - Google Patents
用于制造包括用于俘获电荷的层的半导体元件的工艺 Download PDFInfo
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Abstract
本发明涉及一种用于制造半导体元件的工艺,所述工艺包括基板的快速热处理阶段,所述基板包括电荷俘获层,所述快速热处理阶段能够损坏基板的RF特性。根据本发明,快速热处理阶段之后是在700℃至1100℃之间的、达至少15秒的时间段的基板的恢复热处理。
Description
技术领域
本发明涉及一种用于制造包括用于俘获电荷的层的半导体元件的工艺。
背景技术
集成装置通常在晶圆形式的基板上被制备,晶圆在集成装置的制造中主要充当支撑。然而,集成程度和对于这些装置期望的性能的提高导致装置的性能与在上面形成装置的基板的特性之间越来越显著的耦合。特别对射频(RF)装置来说情况就是这样,所述RF装置处理频率在近似3kHz至300GHz之间的信号,并且特别在远程通信(电话、Wi-Fi、蓝牙等)领域中具有应用。
作为装置/基板耦合的示例,因在装置中传播的高频信号而产生的电磁场穿入到基板的深处,并且与在那里发现的可能电荷载流子(possible charge carrier)相互作用。这由于插入损耗和由串扰引起的部件之间的可能影响而导致信号的一部分能量的不必要消耗。
射频装置(诸如,开关和天线调谐器)以及另外功率放大器可以在专门适应的基板上制备,以便将这些现象考虑在内并以便提高射频装置的性能。
由此,已知绝缘体上硅(SOI)基板,SOI基板如图1中表示的包括支撑基板2、被设置在支撑基板3上的电荷俘获层(charge-trapping layer)3、被设置在俘获层3上的绝缘层4以及被设置在绝缘层上的表面硅层5。支撑基板2可以展示大于1kohm.cm的电阻。俘获层3可以包括非掺杂多晶硅。电荷俘获层3使得可以减轻前面提及的装置/基板耦合,并且由此保证RF装置的良好性能。例如文献FR 2 860 341、FR 2 933 233、FR 2 953 640以及US2015115480中描述了这种基板的制造。
申请人公司已经注意到,应用于这种SOI基板的快速热处理的应用可能导致该基板的射频特性受影响。实际上,这些快速热处理在基板的制造期间在处理基板的表面方面具有特定用途。这在用于CMOS部件的制造(例如,掺杂剂的活化)的正常工艺中也是必要的阶段。
更具体地,申请人公司已经注意到,“二次谐波失真(second harmonicdistortion)”特性描述测量证明在经受快速热处理的基板的情况下具有比在尚未经受快速热处理的基板的情况下低25%的量级。
因为特性描述测量完全代表在描述特性的基板上形成的RF装置的期望性能,所以特性描述测量特别相关,特性描述测量的详细描述将在2015年1月的标题为“White paper-RF SOI Characterisation”且由Soitec出版的文献中找到。
然而,由展示电荷俘获层且已经经受快速热处理的SOI基板上的该测量实现的电平(level)不足以高至保证RF装置在所需的规范下的操作。
发明的目的
本发明的一个目的是提供用于制造半导体元件的工艺,该工艺包括不展示所发现的性能损耗的快速热处理阶段。
发明内容
为了实现该目的,本发明如最广泛接受的提供了一种用于制造半导体元件的工艺,所述工艺包括基板的快速热处理阶段,该基板包括电荷俘获层,所述快速热处理阶段能够损坏该基板的RF特性。
该工艺值得注意的是,快速热处理阶段之后是在700℃至1100℃之间的、达至少15秒的时间段的基板的恢复(healing)热处理。
出人意料地,申请人公司已经演示,在该恢复热处理之后,基板展示了期望的射频特性(换句话说,基板处于与未受快速热处理来处理的基板相同的电平)。
恢复热处理很容易进行;它可以为在传统立式炉中进行的、在中性或还原气氛(reducing atmosphere)中处于950℃一小时以上的热处理。
有利地,基板的射频特性由二次谐波失真测量(second harmonic distortionmeasurement)来评估。如以上所指示的,该测量完全代表将被形成在该基板上的部件的RF性能。
优选地,快速热处理在通常用于半导体部件和基板的制造领域中的快速热处理装置(诸如,快速热退火(RTA)装置或闪光(flash)退火装置)中进行。
有利地,快速热处理包括在1125℃至1250℃之间的稳定温度(plateautemperature)下将基板暴露到处理气氛达两分钟的最大时间段。这些处理条件对于基板或部件的制造是特别有效的。使得可以在结束时完全或部分恢复元件的期望射频性能的恢复热处理不在于选择目标将在于限制它们对基板的RF特性的影响的弱化快速热处理条件。
半导体元件可以是包括如在前序中提出的电荷俘获层的基板(诸如,绝缘体上硅(SOI)基板)或在该基板上制造的半导体装置。这是因为特别有利地,根据本发明的恢复热处理是特别通用的,并且可以在基板的制造期间或在该基板上的部件的制造期间应用。
优选地,恢复热处理在快速热处理装置中原地进行。由此,避免另外装置的使用,并且简化用于制造元件的工艺。
非常有利地,恢复热处理通过以小于40℃每秒控制装置的温度的快速降低来进行。
根据本发明的恢复热处理在基板是具有至少200mm直径的晶圆时具有特定用途。这是因为对于这些晶圆尺寸,在没有用于制造规范非常严格的基板的快速热处理的情况下难以设想管理。这是因为已知的另选手段(化学机械抛光、长时间退火)不使得可以在短处理时间期间在晶圆的整个表面上均匀地处理晶圆。
优选地,电荷俘获层是多晶硅层。
附图说明
将参照附图鉴于遵循本发明的非限制性实施方式的描述获得本发明的更佳理解,附图中:
图1表示现有技术的展示电荷俘获层的基板;
图2表示根据半导体元件的本发明的、制造工艺的阶段的序列;
图3表示快速热退火装置的已知构造;
图4再现快速热退火装置中的快速热处理的温度分布曲线图;以及
图5表示根据本发明的实施方式的恢复热处理的示例。
具体实施方式
图2表示组成根据本发明的用于制造半导体元件的工艺的阶段的序列。
术语“半导体元件”无差别地表示具体用于应用于RF领域中的半导体基板或装置。由此,本发明可应用于制造这些元件中的一个或另一个。
在第一阶段期间,提供包括电荷俘获层3的基板1。
优选地,该基板1是绝缘体上硅(SOI)基板,该SOI基板展示表面硅层5、绝缘层4(例如,由硅氧化物制成)以及支撑件(support)2。电荷俘获层3被设置在绝缘层4与支撑件2之间。
如在形成前言中提出的现有技术的文献中记录的,基板1可以以多种方式来制备。然而,优选地,后者通过应用智能切割(Smart CutTM)技术来制造,根据该技术,旨在形成表面硅层5的硅氧化物层以及基板1的绝缘层4被转移到设置有俘获层3的支撑件2。该转移阶段传统上之后是完成基板1的序列,以便在基板上给予特别是如关于基板的表面状态的所需特性。
在本发明的语境中,支撑件2优选地展示大于1kohm.cm的高电阻特性。支撑件可以对应于展示6ppm至10ppm之间的低填隙氧量(由表达“低Oi”来表示)的p型硅基板。
支撑件还可以为展示大于26ppm的高填隙氧量(由表达“高Oi”来表示)的硅基板。
在特定情况下,特别是在俘获层3展示足够且大于30微米的厚度的时候,支撑件2可以展示小于1kohm.cm的标准电阻。
传统地,基板1可以以圆形晶圆的形式来提供,该晶圆的直径可以为200mm、300mm或实际上甚至为450mm。
俘获层3如在形成现有技术的文献中报告的可以具有高度变化的性质。通常,俘获层3是展示结构缺陷(诸如,错位、晶界、无定形区域、间隙、夹杂物、气孔等)的非晶层。
这些结构缺陷例如在不完全或悬垂化学键(incomplete or pendant chemicalbond)处形成易于移动穿过材料的电荷的陷阱。由此,防止俘获层中的导电,该俘获层因此展示高电阻。
有利地,并且由于易于使用的原因,该俘获层3由多晶硅层形成。该层的厚度(特别是在它被形成在电阻支撑件上时)可以在1μm至3μm之间。然而,可以完全设想小于或大于该区间的其他厚度。
如众所周知的,由多晶硅制成的俘获层3可以通过从气态硅源(诸如,二氯甲硅烷或三氯甲硅烷)在支撑件4上沉积来形成。为了在基板1可能经受的热处理期间维持该层的多晶质量,有利地可以在电荷俘获层3的沉积之前在支撑基板2上设置例如由二氧化硅制成的无定形层。
在根据本发明的工艺的后续阶段中,并且总是关于图2,向基板1应用快速热处理。
该快速热处理阶段可以形成基板制造期间的基板1的完成序列的一部分。该快速热处理还可以与制造半导体装置的阶段(例如,掺杂剂的活化阶段)对应。
术语“快速热处理”表示期间基板1在稳定处理温度(plateau treatmenttemperature)下暴露到处理气氛达两分钟的最大持续时间的阶段。稳定处理温度通常在1125度至1250度之间。稳定温度的上升和下降阶段以多于60℃/s的高热梯度来进行,这使得可以限制处理的总持续时间。
根据所选的快速热处理装置的处理稳定期的持续时间可以非常短(在闪光退火装置中具有几微秒的量级),或者在快速退火炉中可以延长到15秒至45秒的持续时间。
处理气氛依赖该处理的目的。处理气氛例如可以为中性、还原或氧化气氛。
为了应用该快速热处理,例如且如在图3中概略性表示的,已知包括用于容纳要被处理的基板的石英室6的快速热退火装置。处理使用被设置在基板下方和上方的加热灯7来进行。在处理期间,基板在由三个点8形成的支撑件上在室中保持水平。室的气氛可以通过在其中引入所选气体来控制,该气体可以经由其开口可控的排气系统9来排放。
快速热处理通过以下方式使用该装置来应用:向灯7提供电力,以由高达预定温度(例如,在1150℃至1250℃之间)的辐射来加热基板。基板的温度升高非常快速(具有每秒60℃或更多的量级),结果是达到稳定温度需要10秒至20秒。热处理在该稳定温度下进行达一时间段,该时间段在该装置中可以达到从30秒到两分钟。在该时段结束时,中断被提供给灯7的电力,并且基板的温度非常快速地降低(具有也为每秒60℃的量级)。通常,进行基板的冷却并允许从室提取基板需要20秒到30秒。例如图4中再现了在该装置中获得的典型温度分布曲线。应注意,装配室6且使得温度测量可以的高温计仅对于大于近似600℃至700℃的温度值有效,这说明了图4的绘图的截断形状。
在该快速热处理结束时,完全令人惊奇的是,可以看到,基板1的某些RF特性已经劣化。特别是利用二次谐波失真测量的情况,该二次谐波失真的提及在本专利申请的引言中进行。
在不将本发明置于这些结果和可能涉及的现象的任意一个物理解释的情况下,看起来俘获层3对快速热处理特别敏感。结构缺陷或电化学键看起来在温度和/或温度梯度的效应下重新组织。另外,快速热处理的特定分布曲线可以有助于超过使层3的俘获特性饱和的电荷载流子的生成。
不管该特定分布曲线的原点如何,基板1的恶化射频特性的观察不使得能够保证在基板1上所需的、规范内的半导体装置的操作。
在再次参照图2时,本发明提供了快速热处理阶段之后是基板1的恢复热处理以便至少部分恢复性能的所测量损耗。
特别令人惊奇的是,达15秒时段的700℃至1100℃之间的恢复热处理至少看起来足以使基板1展示改进的射频特性。恢复热处理气氛可以由中性气体(诸如,氩气)、还原气体(诸如,氢气)、乃至这两种气体类型的混合物构成。该气氛例如可以为近似95%由氮气组成且5%由氢气组成的包括氢气的氮气,该包括氢气的氮气经常由名称“合成气体”来表示。
处理可以在传统立式炉中进行。在这种情况下,然后应用在氩气下或氮气下近似950℃达近似一小时的处理。该处理前面是或可以包括氧化阶段,以便使基板1的表面免于退火环境。然后可以通过简单的化学蚀刻在恢复热处理阶段的结束时去除所形成的氧化层。
特别有利地,恢复热处理在快速热处理装置中原地进行。
通过在温度稳定期结束时控制被提供给快速热退火装置的室6的灯7的电能,如图5表示的,可以在该稳定期之后在950℃下退火达例如在15秒至两分钟之间的时间段。
另选地或在补充该950℃下的退火时,可以通过在完成快速热处理稳定期时根据比40℃每秒更低的热梯度控制温度的降低来建立恢复热处理。
与现有技术的快速热处理相比放慢速度的该冷却还可以简单地通过调节该冷却阶段期间供应给灯7的电力来获得。
不管所选恢复热处理的实施方式如何,可以看出,如在以下示例中被使得清楚的,提高基板1的RF特性(具体为二次谐波失真的特性)。
制备了展示俘获层3的两种基板A和B。具有300mm直径的两种基板A和B由具有75nm厚度的表面硅层5和具有200mm厚度的硅氧化物绝缘层4构成。俘获层3由具有1.7μm厚度的多晶硅层构成。基板A包括展示17kohm.cm电阻的支撑件2和基板B具有5kohm.cm。
这些基板A和B在结构上被设计为以便为基板A提供-100dBm的二次谐波失真值且为基板B提供-90dBm的二次谐波失真值。这些值对于尚未接受快速热处理的类似基板而获得。
以下处理应用于这两种基板A和B中的每一个,并且对于它们中的每一个测量二次谐波失真(HD2):
单独RTA:快速热处理,图4中给出其分布曲线;
RTA+TTH:在保护氧化之后的、在与之前的RTA处理相同的快速热处理之后进行的氩气下的达一个小时的950℃热处理;
RTA+:快速热处理,图5中给出其分布曲线,该分布曲线继1200℃的稳定期之后包括950℃的恢复处理。
由此,在之前表中清楚的是,根据本发明,快速热处理影响基板1的所测量性能,并且该性能在应用恢复热处理之后至少部分恢复。
Claims (12)
1.一种半导体元件的制造工艺,所述工艺包括基板(1)的快速热处理阶段,该基板(1)包括电荷俘获层(3),所述快速热处理阶段能够损坏所述基板(1)的RF特性,所述工艺的特征在于:所述快速热处理阶段之后是在700℃至1100℃之间的、达至少15秒的时间段的所述基板的恢复热处理。
2.根据前一权利要求所述的制造工艺,其中,所述恢复热处理在中性或还原气氛中进行。
3.根据前述权利要求中的任一项所述的制造工艺,其中,所述恢复热处理包括在950℃下退火达一小时。
4.根据前述权利要求中的一项所述的制造工艺,其中,所述快速热处理阶段在诸如快速退火炉或闪光退火装置的快速热处理装置中进行。
5.根据前一权利要求所述的制造工艺,其中,所述恢复热处理在所述快速热处理装置中原地进行。
6.根据前一权利要求所述的制造工艺,其中,所述恢复热处理包括在950℃下退火达在15秒至2分钟之间的时间段。
7.根据权利要求5所述的制造工艺,其中,所述恢复热处理通过在完成所述快速热处理时以小于40℃/s控制温度的降低来进行。
8.根据前述权利要求中的一项所述的制造工艺,其中,所述快速热处理包括在1125℃至1250℃之间的稳定温度下将所述基板(1)暴露到处理气氛达2分钟的最大时间段。
9.根据前述权利要求中的一项所述的制造工艺,其中,所述半导体元件是RF装置。
10.根据前述权利要求中的一项所述的制造工艺,其中,所述半导体元件是展示200mm或300mm直径的绝缘体上硅晶圆。
11.根据前述权利要求中的一项所述的制造工艺,其中,所述电荷俘获层(3)是多晶硅层。
12.根据前述权利要求中的一项所述的制造工艺,其中,所述基板(1)的所述RF特性由二次谐波失真测量来评估。
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