CN107680997A - Lateral double diffusion metal oxide semiconductor FET with adjustable type field plate - Google Patents
Lateral double diffusion metal oxide semiconductor FET with adjustable type field plate Download PDFInfo
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- CN107680997A CN107680997A CN201711032851.4A CN201711032851A CN107680997A CN 107680997 A CN107680997 A CN 107680997A CN 201711032851 A CN201711032851 A CN 201711032851A CN 107680997 A CN107680997 A CN 107680997A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 24
- 230000033228 biological regulation Effects 0.000 claims abstract description 51
- 230000005684 electric field Effects 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 230000005611 electricity Effects 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 3
- 235000006508 Nelumbo nucifera Nutrition 0.000 claims description 2
- 240000002853 Nelumbo nucifera Species 0.000 claims description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 abstract description 2
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention proposes a kind of lateral double diffusion metal oxide semiconductor FET with adjustable type field plate, including：Field oxide and the drift region below field oxide, some adjustable type field plates are set on the surface of the field oxide, setpoint distance is spaced between two neighboring adjustable type field plate；Each adjustable type field plate is all connected with adjusting electric capacity；By the size for the positive and negative electrode for adjusting adjustable type field plate and regulation electric capacity, charge inducing amount and the induced potential on adjustable type field plate can be adjusted so that uniform surface transverse electric field distribution is obtained in drift region.The structure devices can improve device drift region surface transverse electric field distribution, have the conducting resistance of very high horizontal voltage endurance capability and very little.
Description
Technical field
The present invention relates to power semiconductor field, is to be related to a kind of band suitable for high-voltage applications in particular
There is the lateral double diffusion metal oxide semiconductor FET (LDMOS) of adjustable type field plate.
Background technology
Lateral double diffusion metal oxide semiconductor FET (LDMOS) is double-diffused metal oxide semiconductor field effect
Answer a kind of transversary of tube device (DMOS).Have the advantages that high pressure, gain are big, easily drive, and be more easy to and CMOS works
Skill is compatible, therefore is widely used in smart-power IC.Lateral double diffusion metal oxide semiconductor at present
The emphasis of FET (LDMOS) design is how rationally to relax the contradiction between breakdown voltage and conducting resistance, and is ensured
It has higher stability.Jiao that current people are studied lateral double diffusion metal oxide semiconductor FET (LDMOS)
Point is concentrated mainly on the design of its drift region concentration, reduces device surface electric-field intensity (Reducd by buried regions technology
Sfurace Field, abbreviation RESURF), and the technology such as resistance field plate, Super Junction, drift region gradient doping
To realize the compromise of breakdown voltage and conducting resistance.
Traditional lateral double diffusion metal oxide semiconductor field-effect tube structure is as shown in figure 1, to make LDMOS device exist
Preferably effect is played in chip, improve the breakdown voltage of device and conducting resistance tradeoff be LDMOS designs a weight
Want research topic.Field plate techniques can improve the breakdown voltage and conducting resistance tradeoff of LDMOS device, however, traditional field
Plate is connected with the source electrode of device, has a fixed current potential, and device current potential on drift region surface under resistance to pressure condition be along
Device length direction change, therefore, charge inducing of traditional field plate under the resistance to pressure condition of device divides on device length direction
Cloth is uneven so that influenceed at the diverse location of device drift region by field plate it is of different sizes, so traditional field plate can not make device
Part drift region obtains uniform transverse electric field (i.e. length direction electric field) distribution.
The content of the invention
The purpose of the present invention is exactly to solve the above problems, it is proposed that the lateral double diffused metal with adjustable type field plate
Oxide semiconductor field effect pipe, the big I of effect of each field plate is adjusted by device architecture parameter designing in the device,
The problem of drift region transverse electric field distribution is uneven is improved, device has higher horizontal voltage endurance capability and smaller electric conduction
Resistance.
To achieve these goals, the present invention adopts the following technical scheme that：
The invention discloses a kind of lateral double diffusion metal oxide semiconductor FET with adjustable type field plate, bag
Include：Source metal, field oxide and the drift region below field oxide, on the surface of the field oxide, setting is some can
Tune type field plate, setpoint distance is spaced between two neighboring adjustable type field plate；
Each adjustable type field plate is all connected with adjusting electric capacity；The adjustable type field plate is connected with adjusting the positive electrode of electric capacity
Connect, regulation electric capacity negative electrode is set above the regulation electric capacity positive electrode；The negative electrode of all regulation electric capacity is mutual by metal
Line is connected with source metal；
By setting the size of the positive and negative electrode of adjustable type field plate and regulation electric capacity, the sense on adjustable type field plate can be adjusted
Answer the quantity of electric charge so that uniform surface transverse electric field distribution is obtained in drift region.
Further, the positive and negative electrode of the regulation electric capacity is equal in magnitude, perfectly aligned.
Further, on the direction of source metal to drain metal, between the positive and negative electrode of the regulation electric capacity mutually
The area of covering successively decreases successively.
Further, the space between the source metal and drain metal is filled using insulating medium layer.
Further, the length and/or width of the adjustable type field plate and regulation electric capacity are designed according to being actually needed.
Further, the adjustable type field plate is discontinuously set in the width direction, by the adjustable type field plate point on width
Into several adjustable type field plate units, each adjustable type field plate unit is all connected with adjusting capacitor cell accordingly.
The present invention further discloses a kind of driving chip applied on printer, motor or flat-panel monitor,
Using the above-mentioned lateral double diffusion metal oxide semiconductor FET with adjustable type field plate.
The present invention further discloses a kind of printer, using above-mentioned driving chip.
The present invention further discloses a kind of motor, using above-mentioned driving chip.
The present invention further discloses a kind of flat-panel monitor, using above-mentioned driving chip.
Beneficial effect of the present invention：
(1) traditional structure device each field plate in the case where turning off resistance to pressure condition have with source electrode identical current potential, and device floats
The current potential for moving area surface is alongst constantly changing, therefore field plate is to the influence size at the diverse location of device drift region
Difference, cause device drift region inner surface transverse electric field distribution uneven.And in structure of the present invention, by adjusting adjustable type field plate
The size of parasitic capacitance and tunable capacitor between drift region, the field plate of different lateral positions can be made to be turned off in device
There is different current potentials under resistance to pressure condition, so that device obtains uniform surface transverse electric field distribution in whole drift region,
And then cause structure devices of the present invention that there is higher horizontal voltage endurance capability.
(2) breakdown voltage of traditional structure device increases and reduced with the concentration of drift region.In structure devices of the present invention
Field plate effect size is adjustable, therefore,, can be with by the current potential of adjusting means adjustable type field plate after the concentration increase of drift region
Change the effect size of field plate, device can be made to continue to keep uniform surface transverse electric field distribution in drift region, so that device
The breakdown voltage of part will not reduce.So structure devices of the present invention can increase the concentration of drift region and retainer member breakdown potential
Press constant so that device has smaller conducting resistance.
(3) structure of the present invention and traditional handicraft are completely compatible, it is only necessary on conventional preparation techniques carry out domain change be
It can be achieved, it is not necessary to increase extra processing step, the increase of process costs will not be brought.
Figure of description
Fig. 1 is the schematic three dimensional views of traditional lateral double diffusion metal oxide semiconductor field-effect tube structure；
Fig. 2 is the lateral double diffusion metal oxide semiconductor FET knot provided by the invention with adjustable type field plate
The schematic three dimensional views of structure；
Fig. 3 is schematic cross-section of the structure devices of the present invention along its length with thickness direction；
Fig. 4 is schematic cross-section of the structure devices of the present invention in the width direction with length direction；
Wherein, 1.P types Semiconductor substrate, 2. buries oxide layers, 3.N types drift region, 4.P type traps, 5.P types contact zone, 6.N types
Source region, 7. source metals, 8. field oxides, 9.N types drain region, 10. drain metals, 11. gate oxides, 12. polysilicon gates, 131.
First adjustable type field plate, 132. second adjustable type field plates, 133. the 3rd adjustable type field plates, 141. first regulation electric capacity positive electrodes,
142. second regulation electric capacity positive electrodes, 143. the 3rd regulation electric capacity positive electrodes, 151. first regulation electric capacity negative electrodes, 152. second
Adjust electric capacity negative electrode, 153. the 3rd regulation electric capacity negative electrodes, 16. metal interconnecting wires.
Embodiment
The invention will be described further with specific embodiment below in conjunction with the accompanying drawings.
The invention discloses a kind of lateral double diffusion metal oxide semiconductor FET with adjustable type field plate, bag
Include：P-type semiconductor substrate 1, buries oxide layer 2 is provided with P-type semiconductor substrate 1, N-type drift region 3 is provided with buries oxide layer 2
With p-type trap 4, p-type contact zone 5 and N-type source region 6 are provided with p-type trap 4, is connected on p-type contact zone 5 and N-type source region 6 active
Pole metal 7, field oxide 8 and N-type drain region 9 are provided with N-type drift region 3, drain metal 10 is connected with N-type drain region 9,
Part N-type drift region 3 and the top of part p-type trap 4 are provided with gate oxide 11, and one end of gate oxide 11 and the side of N-type source region 6
Boundary is offseted, and the border of the other end and field oxide 8 of gate oxide 11 offsets, and polysilicon gate is provided with above gate oxide 11
12, and polysilicon gate 12 extends to the top of field oxide 8, and some adjustable type field plates are set on the surface of field oxide 8, it is adjacent
Setpoint distance is spaced between two adjustable type field plates.
Adjustable type field plate is be arranged in parallel with source metal 7 in the direction of the width, and adjustable type field plate is spaced in the longitudinal direction
Setpoint distance.
It should be noted that the quantity of adjustable type field plate is configured according to being actually needed in the present invention.
In the present embodiment, the quantity of adjustable type field plate is three, as shown in Figures 2 and 3, is respectively：First adjustable type field
Plate 131, the second adjustable type field plate 132 and the 3rd adjustable type field plate 133；
The first regulation electric capacity positive electrode 141 is connected with first adjustable type field plate 131, is connected on the second adjustable type field plate 132
The second regulation electric capacity positive electrode 142 is connected to, the 3rd regulation electric capacity positive electrode 143 is connected with the 3rd adjustable type field plate 133；
The top of first regulation electric capacity positive electrode 141 is provided with the first regulation electric capacity negative electrode 151, the second regulation electric capacity positive electrode
142 tops are provided with the second regulation electric capacity negative electrode 152, and the top of the 3rd regulation electric capacity positive electrode 143 is provided with the 3rd regulation electric capacity and born
Electrode 153, it is logical that the first regulation electric capacity negative electrode 151, second adjusts the regulation electric capacity negative electrode 153 of electric capacity negative electrode 152 and the 3rd
Metal interconnecting wires 16 are crossed with source metal 7 to be connected.
As preferable scheme, the first regulation electric capacity positive electrode 141 is arranged above the first tune in the embodiment of the present invention
Negative electrode 151 is held in economize on electricity, and the first regulation electric capacity positive electrode 141 and first adjusts the equal in magnitude of electric capacity negative electrode 151, completely right
Together.
As shown in figure 4, the area that the 3rd regulation electric capacity negative electrode 153 and the 3rd regulation electric capacity positive electrode 143 mutually cover
The area mutually covered less than the second regulation electric capacity negative electrode 152 and the second regulation electric capacity positive electrode 142；Second regulation electric capacity is born
Electrode 152 and second adjusts the area that electric capacity positive electrode 142 mutually covers and is less than the first regulation electric capacity negative electrode 151 and the first tune
The area that positive electrode 141 mutually covers is held in economize on electricity.
As a kind of embodiment, the present invention is imitated the lateral double diffusion metal oxide semiconductor field with adjustable type field plate
Insulating medium layer can be filled by answering in the space on tube device surface.
It should be noted that in the present invention, the first regulation electric capacity positive electrode 141, second adjusts electric capacity positive electrode 142, the
Three regulation electric capacity positive electrodes 143, first adjust electric capacity negative electrode 151, second and adjust the regulation electric capacity of electric capacity negative electrode 152 and the 3rd
The length and width of negative electrode 153 can need to be designed according to device.
As a kind of embodiment, by the upper discontinuously setting in the width direction of adjustable type field plate, the adjustable type of each segmentation
Field plate unit is all connected with adjusting the positive plate of electric capacity, and the positive plate of the adjacent two regulation electric capacity being segmented is also to disconnect accordingly
, adjusting the negative plate of electric capacity can disconnect and can also not turn off.Adjustable type field plate and drift can be adjusted through the above way
The size of parasitic capacitance between the size of parasitic capacitance between area and the positive/negative plate of regulation electric capacity.Structure of the present invention
In, there is parasitic capacitance between the first adjustable type field plate 131 and N-type drift region 3, be named as C131, the first regulation electric capacity positive electricity
Pole 141 and first has parasitic capacitance between adjusting electric capacity negative electrode 151, C141 is named as, due to the first adjustable type field plate 131
Be connected with the first regulation electric capacity positive electrode 141, parasitic capacitance C131 and C141 formation series relationship, when device be off it is pressure-resistant
During state, the first regulation electric capacity negative electrode 151 is in low potential, and N-type drift region 3 is in high potential, according to series capacitance
Partial pressure relationship can show that the current potential of the first adjustable type field plate 131 is between the current potential of N-type drift region 3 and the first regulation electric capacity negative electricity
Between the current potential of pole 151, and the current potential of the first adjustable type field plate 131 is influenceed by parasitic capacitance C131 and C141 size.
Therefore, born by designing the first adjustable type field plate 131, first regulation electric capacity positive electrode 141 and the first regulation electric capacity
The length and width of electrode 151, parasitic capacitance C131 and C141 size can be adjusted, and then adjust the first adjustable type field plate
131 current potential, the current potential by adjusting the first adjustable type field plate 131 can adjust the induced electricity on the first adjustable type field plate 131
Lotus amount, and then adjust the effect size of the first adjustable type field plate 131 so that the N-type drift region of the lower section of the first adjustable type field plate 131
3 obtain uniform surface laterally (i.e. length direction) Electric Field Distribution.
Similarly, the regulation electrode negative electrode of electric capacity positive electrode 142 and second is adjusted by the second adjustable type field plate 132, second
152 length and width design, the current potential of the second adjustable type field plate 132 can be adjusted, so that the second adjustable type field plate 132
The N-type drift region 33 of lower section obtains uniform surface transverse electric field distribution, and electricity is adjusted by the 3rd adjustable type field plate the 133, the 3rd
Hold length and width design that positive electrode 143 and the 3rd adjusts electrode negative electrode 153, the 3rd adjustable type field plate can be adjusted
133 current potential, so that the N-type drift region 3 of the lower section of the 3rd adjustable type field plate 133 obtains uniform surface transverse electric field distribution.
So the field plate of the different lateral positions in structure devices of the present invention has not in the case where device turns off resistance to pressure condition
Same current potential, device can obtain uniform surface transverse electric field distribution in whole drift region so that structure devices of the present invention
With higher horizontal voltage endurance capability.
It is it should be noted that above-mentioned for the lateral double diffusion metal oxide semiconductor field-effect with adjustable type field plate
The description of pipe is that the structure for being directed to N-type device is carried out, equally can be using the adjustable of the present invention for the structure of P-type device
Type field plate structure, embodiment are same as above, and will not be repeated here.
The present invention further discloses a kind of driving chip applied on printer, motor or flat-panel monitor,
The lateral double diffusion metal oxide semiconductor FET with adjustable type field plate of the present invention is employed in the chip.
The present invention further discloses a kind of printer, motor or flat-panel monitor, said apparatus, which uses, to be included
The driving chip of lateral double diffusion metal oxide semiconductor FET disclosed by the invention with adjustable type field plate.
Although above-mentioned the embodiment of the present invention is described with reference to accompanying drawing, model not is protected to the present invention
The limitation enclosed, one of ordinary skill in the art should be understood that on the basis of technical scheme those skilled in the art are not
Need to pay various modifications or deformation that creative work can make still within protection scope of the present invention.
Claims (10)
1. the lateral double diffusion metal oxide semiconductor FET with adjustable type field plate, including：Source metal, field oxidation
Layer and the drift region below field oxide, it is characterised in that on the surface of the field oxide, some adjustable type fields are set
Plate, setpoint distance is spaced between two neighboring adjustable type field plate；
Each adjustable type field plate is all connected with adjusting electric capacity；The adjustable type field plate is connected with adjusting the positive electrode of electric capacity,
Regulation electric capacity negative electrode is set above the regulation electric capacity positive electrode；It is all regulation electric capacity negative electrodes by metal interconnecting wires with
Source metal connects；
By setting the size of the positive and negative electrode of adjustable type field plate and regulation electric capacity, the induced electricity on adjustable type field plate can be adjusted
Lotus amount and induced potential so that uniform surface transverse electric field distribution is obtained in drift region.
2. the lateral double diffusion metal oxide semiconductor FET of adjustable type field plate is carried as claimed in claim 1, its
It is characterised by, the positive and negative electrode of the regulation electric capacity is equal in magnitude, perfectly aligned.
3. the lateral double diffusion metal oxide semiconductor FET of adjustable type field plate is carried as claimed in claim 1, its
It is characterised by, on the direction of source metal to drain metal, the face that mutually covers between the positive and negative electrode of the regulation electric capacity
Product is successively decreased successively.
4. the lateral double diffusion metal oxide semiconductor FET of adjustable type field plate is carried as claimed in claim 1, its
It is characterised by, the space between the source metal and drain metal is filled using insulating medium layer.
5. the lateral double diffusion metal oxide semiconductor FET of adjustable type field plate is carried as claimed in claim 1, its
It is characterised by, the length and/or width of the positive and negative electrode of the adjustable type field plate and regulation electric capacity are set according to being actually needed
Meter.
6. the lateral double diffusion metal oxide semiconductor FET of adjustable type field plate is carried as claimed in claim 1, its
It is characterised by, the adjustable type field plate is discontinuously set in the width direction, and the adjustable type field plate on width is divided into several
Adjustable type field plate unit, each adjustable type field plate unit are all connected with adjusting capacitor cell accordingly.
7. a kind of driving chip applied on printer, motor or flat-panel monitor, it is characterised in that will using right
Seek any lateral double diffusion metal oxide semiconductor FET with adjustable type field plate described in 1-6.
8. a kind of printer, it is characterised in that using the driving chip described in claim 7.
9. a kind of motor, it is characterised in that using the driving chip described in claim 7.
10. a kind of flat-panel monitor, it is characterised in that using the driving chip described in claim 7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711032851.4A CN107680997B (en) | 2017-10-30 | 2017-10-30 | Lateral double-diffusion metal oxide semiconductor field effect transistor with adjustable field plate |
| PCT/CN2018/112150 WO2019085835A1 (en) | 2017-10-30 | 2018-10-26 | Super field plate structure adapted for power semiconductor device, and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711032851.4A CN107680997B (en) | 2017-10-30 | 2017-10-30 | Lateral double-diffusion metal oxide semiconductor field effect transistor with adjustable field plate |
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| Publication Number | Publication Date |
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| CN107680997A true CN107680997A (en) | 2018-02-09 |
| CN107680997B CN107680997B (en) | 2020-04-14 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365009A (en) * | 2018-02-13 | 2018-08-03 | 扬州江新电子有限公司 | The LDMOS device of ring structure is shielded with array multilayer faraday |
| CN109411540A (en) * | 2018-10-31 | 2019-03-01 | 电子科技大学 | With the low lateral high-voltage device than conducting resistance |
| WO2019085835A1 (en) * | 2017-10-30 | 2019-05-09 | 济南大学 | Super field plate structure adapted for power semiconductor device, and application thereof |
| CN110416301A (en) * | 2018-04-28 | 2019-11-05 | 中芯国际集成电路制造(上海)有限公司 | Lateral double-diffused transistor and forming method thereof |
| CN110718585A (en) * | 2018-09-05 | 2020-01-21 | 成都芯源系统有限公司 | LDMOS device and manufacturing method thereof |
| CN111063732A (en) * | 2018-11-07 | 2020-04-24 | 成都芯源系统有限公司 | LDMOS device and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1487594A (en) * | 2002-09-30 | 2004-04-07 | 东南大学 | High-voltage P-type metal oxide semiconductor transistor |
| CN1649168A (en) * | 2004-01-26 | 2005-08-03 | 三菱电机株式会社 | Semiconductor device |
| US20090039424A1 (en) * | 2007-08-10 | 2009-02-12 | Chao-Yuan Su | High-voltage mos transistor device |
| CN103515438A (en) * | 2012-06-20 | 2014-01-15 | 株式会社东芝 | Semiconductor device |
| CN106653830A (en) * | 2015-10-28 | 2017-05-10 | 无锡华润上华半导体有限公司 | Semiconductor device voltage-withstanding structure |
-
2017
- 2017-10-30 CN CN201711032851.4A patent/CN107680997B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1487594A (en) * | 2002-09-30 | 2004-04-07 | 东南大学 | High-voltage P-type metal oxide semiconductor transistor |
| CN1649168A (en) * | 2004-01-26 | 2005-08-03 | 三菱电机株式会社 | Semiconductor device |
| US20090039424A1 (en) * | 2007-08-10 | 2009-02-12 | Chao-Yuan Su | High-voltage mos transistor device |
| CN103515438A (en) * | 2012-06-20 | 2014-01-15 | 株式会社东芝 | Semiconductor device |
| CN106653830A (en) * | 2015-10-28 | 2017-05-10 | 无锡华润上华半导体有限公司 | Semiconductor device voltage-withstanding structure |
Cited By (7)
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