CN107845675A - Lateral double diffusion metal oxide semiconductor FET with width gradual change type field plate - Google Patents
Lateral double diffusion metal oxide semiconductor FET with width gradual change type field plate Download PDFInfo
- Publication number
- CN107845675A CN107845675A CN201711052150.7A CN201711052150A CN107845675A CN 107845675 A CN107845675 A CN 107845675A CN 201711052150 A CN201711052150 A CN 201711052150A CN 107845675 A CN107845675 A CN 107845675A
- Authority
- CN
- China
- Prior art keywords
- gradual change
- metal
- change type
- width
- field plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008859 change Effects 0.000 title claims abstract description 91
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 35
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 35
- 238000009792 diffusion process Methods 0.000 title claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 112
- 229910052751 metal Inorganic materials 0.000 claims abstract description 112
- 230000005669 field effect Effects 0.000 claims description 17
- 230000005684 electric field Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses a kind of lateral double diffusion metal oxide semiconductor FET with width gradual change type field plate, including：Source metal and the drain metal relative with source metal, width gradual change type Metal field plate is connected on the source metal, the width gradual change type Metal field plate includes some width gradual change type metal levels arranged in the width direction, and the width of each width gradual change type metal level is gradually reduced along source electrode to the direction of drain electrode.The electric charge that the structure can make to be sensed on field plate is distributed more uniformly on device length direction, so that device surface Electric Field Distribution is more uniform, therefore the horizontal voltage endurance capability of device can be improved under conditions of device on-resistance is ensured.
Description
Technical field
The present invention relates to power semiconductor field, is to be related to a kind of band suitable for high-voltage applications in particular
There is the lateral double diffusion metal oxide semiconductor FET (LDMOS) of width gradual change type field plate.
Background technology
Lateral double diffusion metal oxide semiconductor FET (LDMOS) is double-diffused metal oxide semiconductor field effect
Answer a kind of lateral high-voltage device of tube device (DMOS).With high pressure, the advantage such as gain is big, distortion is low, and be more easy to
CMOS technology is compatible, therefore is widely used in smart-power IC.Lateral double diffusion metal oxide at present
The emphasis of semiconductor field (LDMOS) design is how rationally to relax the contradiction between breakdown voltage and conducting resistance, and
And ensure that it has higher stability.
Traditional lateral double diffusion metal oxide semiconductor FET (LDMOS) structure is as shown in figure 1, current people
The design of its drift region concentration is concentrated mainly on to the focus of lateral double-diffused metal-oxide-semiconductor transistor research, passed through
Buried regions technology reduction device surface electric-field intensity (Reducd Sfurace Field, abbreviation RESURF), and resistance field plate,
The technologies such as Super Junction, drift region gradient doping realize the compromise of breakdown voltage and conducting resistance.
Lateral double diffusion metal oxide semiconductor FET turn off it is pressure-resistant in the state of, its surface potential is along source
Pole gradually increases to the direction of drain electrode so that the electric charge sensed on traditional field plate gradually increases, and causes distribution of charges on field plate
It is uneven.
In addition, to make body silicon device have more preferable effect, the breakdown voltage for improving device is an important research topic.Source
Pole Metal field plate is an important technology for improving device electric breakdown strength, but traditional field plate techniques exist due to field plate termination
Edge effect, substantial amounts of electric charge can be assembled at the terminal edge of field plate so that distribution of charges uniformity is deteriorated on field plate, reduces
The breakdown voltage of device.This problem is solved by the breakdown voltage of effective lifting device.
Prior art discloses a kind of lateral double diffusion metal oxide semiconductor field-effect tube structure, its field plate termination are equal
The even form for splitting into rectangular block, the source drain capacitance of device can be reduced, improve the frequency characteristic of device.But in the technology
Field plate width be non-gradual change, therefore the skewness along its length of the electric charge on field plate, it is impossible to the sky in drift region
Between electric charge reach perfect balance.Meanwhile its field plate division block end is alignment, the edge effect of field plate termination can make field plate
Substantial amounts of electric charge is gathered in end, causes device surface non-uniform electric.
The content of the invention
The purpose of the present invention is exactly to solve the above problems, it is proposed that a kind of laterally double with width gradual change type field plate
Diffused MOS field-effect should manage, by setting the field plate of width gradual change and changing the length of field plate so that device
Part has the horizontal voltage endurance capability of surface electric field distribution and Geng Gao evenly.
To achieve these goals, the present invention adopts the following technical scheme that：
Lateral double diffusion metal oxide semiconductor FET with width gradual change type field plate, including：Source metal
And the drain metal relative with source metal, width gradual change type Metal field plate is connected on the source metal, the width is gradually
Change metal field plate includes some width gradual change type metal levels arranged in the width direction, each described width gradual change type metal
The width of layer is gradually reduced along source electrode to the direction of drain electrode.
Further, the width gradual change type Metal field plate also includes：Reguline metal layer；Described reguline metal layer one end with
Source metal connects, and the other end connects the width gradual change type metal level.
Further, reguline metal layer and width gradual change the type metal level is one-time formed entirety.
Further, the length of the width gradual change type metal level is different.
Further, the width gradual change type Metal field plate includes the multiple width gradual change types first arranged in the width direction
Metal level and the multiple width gradual change type second metal layers arranged in the width direction；The width gradual change type the first metal layer and width
The length for spending gradation type second metal layer is different.
Further, the width gradual change type the first metal layer and width gradual change type second metal layer are staggered.
Further, the space filled media layer between the source metal and drain metal.
Further, the thickness sum of connection field oxide below the dielectric layer, field oxide and dielectric layer is more than 1 μ
m。
Further, the length of adjustment width gradation type metal level or adjustment width gradation type metal layer width are passed through
Fade rate, the quantity of electric charge sensed on adjustment width gradation type Metal field plate.
The present invention further discloses a kind of driving chip applied on printer, motor or flat-panel monitor,
Including：Using above-mentioned any lateral double diffusion metal oxide semiconductor FET with width gradual change type field plate.
Beneficial effect of the present invention：
(1) width gradual change type Metal field plate is employed in structure of the present invention, the width of field plate is along source electrode to the side of drain electrode
To being gradually reduced, therefore the parasitic capacitance between field plate and drift region can be also gradually reduced along source electrode to the direction of drain electrode, its
Variation tendency and the variation tendency of surface potential are on the contrary, so as to which partial offset surface potential gradually increases along source electrode to drain directions
The inhomogeneities of distribution of charges on big caused field plate.Therefore, the distribution of charges that the field plate of structure devices of the present invention is sensed
More uniformly, so that the whole drift region of device obtains uniform field plate effect, make device that there is uniform drift region laterally electricity
Field (i.e. length direction electric field) distribution, improve the horizontal voltage endurance capability of device.
(2) length of the width gradual change type the first metal layer in structure of the present invention and width gradual change type second metal layer is not
Together so that three positions are distributed with the terminal edge of field plate in the longitudinal direction, so that the edge effect distribution of field plate becomes
Obtain uniformly.So as to improve the uniformity of distribution of charges on device field plate, make device drift region transverse electric field distribution more uniform, carry
The horizontal voltage endurance capability of high device.
(3) the width gradual change type Metal field plate in structure of the present invention can be in the case where not increasing the sensed quantity of electric charge
Increase the length of field plate, therefore, structure of the present invention can increase exhausting for device drift region, so as to increase the Electric Field Distribution of device
Length, improve the horizontal voltage endurance capability of device.
(4) structure of the present invention only needs to be improved on domain, it is not necessary to increases extra processing step, will not bring
The increase of process costs.
Figure of description
Fig. 1 is traditional lateral double diffusion metal oxide semiconductor field-effect tube structure schematic diagram；
Fig. 2 is the lateral double diffusion metal oxide semiconductor field-effect provided by the invention with width gradual change type field plate
Tubular construction schematic diagram；
Fig. 3 be traditional structure lateral double diffusion metal oxide semiconductor FET and it is provided by the invention with width
Spend surface of the lateral double diffusion metal oxide semiconductor FET of gradation type field plate under device breakdown state laterally electricity
Field pattern；
Fig. 4 be traditional structure lateral double diffusion metal oxide semiconductor FET and it is provided by the invention with width
Spend surface of the lateral double diffusion metal oxide semiconductor FET of gradation type field plate under device breakdown state laterally electricity
Field pattern；
Fig. 5 be traditional structure lateral double diffusion metal oxide semiconductor FET and it is provided by the invention with width
Spend gradation type field plate lateral double diffusion metal oxide semiconductor FET under gate turn-off state drain current with leakage
The simulation result figure of pole tension change；
Wherein, 1.P types Semiconductor substrate, 2. buries oxide layers, 3.N types drift region, 4.P type traps, 5.P types contact zone, 6.N types
Source region, 7. field oxides, 8.N types drain region, 9. gate oxides, 10. polysilicon gates, 11. dielectric layers, 12. drain metals, 13. sources
Pole metal, 14. width gradual change type Metal field plates, 140. reguline metal layers, 141. width gradually type the first metal layer, 142. width are gradually
Type second metal layer.
Embodiment
The invention will be described further with specific embodiment below in conjunction with the accompanying drawings.
The invention discloses a kind of lateral double diffusion metal oxide semiconductor field-effect with width gradual change type field plate
Pipe, including：P-type semiconductor substrate 1, the buries oxide layer 2 of the top of P-type semiconductor substrate 1 is arranged on, is arranged in buries oxide layer 2
The N-type drift region 3 and p-type trap 4 of side；P-type contact zone 5 and N-type source region 6 are provided with above p-type trap 4, above N-type drift region 3
Provided with field oxide 7 and N-type drain region 8；The top of N-type drift region 3 and p-type trap 4 is provided with gate oxide 9, one end of gate oxide 9
Offseted with the border of N-type source region 6, the border of the other end and field oxide 7 offsets；Polysilicon gate is provided with above gate oxide 9
10, polysilicon gate 10 extends to the top of field oxide 7；Drain metal 12 is connected above N-type drain region 8, in p-type contact zone 5
With the top of N-type source region 6 connection source metal 13；Width gradual change type Metal field plate 14 is connected on source metal 13.
Width gradual change type Metal field plate 14 includes：Reguline metal layer 140 and some width for arranging in the width direction are gradually
Change metal layer, the width of each width gradual change type metal level are gradually reduced along source electrode to the direction of drain electrode.Reguline metal
140 one end of layer are connected with source metal 13, and the other end connects the width gradual change type metal level.
As a kind of embodiment, the length of width gradual change type metal level can be different.
It should be noted that the above-mentioned lateral double diffusion metal oxide semiconductor field-effect with width gradual change type field plate
In tubular construction, the gradual change speed of the number of width gradual change type metal level, the length of each width gradual change type metal level and width
Degree can be configured as needed.
The width gradual change type metal level of the present embodiment includes the multiple gold medals of width gradual change type first arranged in the width direction
Category layer 141 and the multiple width gradual change type second metal layers 142 arranged in the width direction, as shown in Figure 2；But this is not limited to,
The structure of the width gradual change type metal level of other forms is also within protection scope of the present invention.
As shown in Fig. 2 width gradual change type Metal field plate 14 include reguline metal layer 140, arrange in the width direction it is multiple
Width gradual change type the first metal layer 141 and the multiple width gradual change type second metal layers 142 arranged in the width direction；Reguline metal
140 one end of layer connection source metal 13, other end connection the first metal layer and second metal layer.
In Fig. 2, width gradual change type the first metal layer 141 and width gradual change type second metal layer 142 are staggered, and width is gradually
Modification the first metal layer 141 and the width of width gradual change type second metal layer 142 gradually subtract along the direction from source electrode to drain electrode
It is small.The length of width gradual change type the first metal layer 141 is less than the length of width gradual change type second metal layer 142.
The width of field plate is gradually reduced along source electrode to the direction of drain electrode, therefore the parasitic capacitance between field plate and drift region
Also can be gradually reduced along source electrode to the direction of drain electrode, the variation tendency of its variation tendency and surface potential is on the contrary, so as to part
Counteract the inhomogeneities that surface potential gradually increases distribution of charges on caused field plate along source electrode to drain directions.Such as Fig. 3
It is shown, mean charge on the field plate of structure of the present invention along its length on distribution had clear improvement compared to traditional structure.
Because field plate termination has edge effect, substantial amounts of electric charge can be assembled at the terminal edge of field plate so that on field plate
Distribution of charges uniformity is deteriorated.Width gradual change type the first metal layer 141 and the metal of width gradual change type second in structure of the present invention
The length of layer 142 is different so that three positions are distributed with the terminal edge of field plate in the longitudinal direction, so that the side of field plate
Edge effect distribution becomes uniform.As shown in figure 3, the average charge density as caused by field plate edge effect on structure field plate of the present invention
Peak Distribution becomes more uniform in three positions.Reference picture 4, due to charge density uniformity on structure field plate of the present invention
Improvement, the surface electric field distribution uniformity of structure of the present invention is greatly improved.
As a kind of embodiment, reguline metal layer 140, width gradual change type the first metal layer 141 and width gradual change type
Two metal levels 142 are one-time formed entirety, can so save design and cost of manufacture.
As a kind of embodiment, p-type trap 4, p-type contact zone 5, N-type source region 6, polysilicon gate 10, N-type drain region 8 in part
And the surface of part field oxide 7 is provided with dielectric layer 11；Preferably, the thickness sum of field oxide 7 and dielectric layer 11 is more than 1 μ
M, it can so obtain more preferable distribution of charges even results.
It should be noted that the quantity of electric charge sensed in structure of the present invention on width gradual change type Metal field plate 14 not only can be with
It is adjusted, but also can be adjusted by changing the Fade rate of width by field plate length.Therefore structure of the present invention
In width gradual change type Metal field plate 14 can increase the length of field plate in the case where not increasing the sensed quantity of electric charge, because
This, structure of the present invention can increase exhausting for device drift region, so as to increase the Electric Field Distribution length of device, improve the horizontal stroke of device
To voltage endurance capability.Reference picture 5, in the case of the other parameters identical such as drift region concentration, structure of the present invention can obtain most
The maximum breakdown voltage that big breakdown voltage can obtain apparently higher than traditional structure.
It is it should be noted that above-mentioned for the lateral double diffusion metal oxide semiconductor field with width gradual change type field plate
The description of effect pipe is that the structure for being directed to N-type device is carried out, and for the structure of P-type device, can equally use the present invention's
With width gradual change type field plate structure, embodiment is same as above, will not be repeated here.
The present invention further discloses a kind of driving chip applied on printer, motor or flat-panel monitor,
The lateral double diffusion metal oxide semiconductor FET with width gradual change type field plate of the present invention is employed in the chip.
The present invention further discloses a kind of printer, motor or flat-panel monitor, said apparatus, which uses, to be included
The driving core of lateral double diffusion metal oxide semiconductor FET disclosed by the invention with width gradual change type field plate
Piece.
Although above-mentioned the embodiment of the present invention is described with reference to accompanying drawing, model not is protected to the present invention
The limitation enclosed, one of ordinary skill in the art should be understood that on the basis of technical scheme those skilled in the art are not
Need to pay various modifications or deformation that creative work can make still within protection scope of the present invention.
Claims (10)
1. the lateral double diffusion metal oxide semiconductor FET with width gradual change type field plate, including：Source metal with
And the drain metal relative with source metal, it is characterised in that width gradual change type Metal field plate, institute are connected on the source metal
Some width gradual change type metal levels that width gradual change type Metal field plate includes arranging in the width direction are stated, each described width is gradually
The width of change metal layer is gradually reduced along source electrode to the direction of drain electrode.
A kind of 2. lateral double diffusion metal oxide semiconductor field effect with width gradual change type field plate as claimed in claim 1
Ying Guan, it is characterised in that the width gradual change type Metal field plate also includes：Reguline metal layer；Described reguline metal layer one end with
Source metal connects, and the other end connects the width gradual change type metal level.
A kind of 3. lateral double diffusion metal oxide semiconductor field effect with width gradual change type field plate as claimed in claim 2
Ying Guan, it is characterised in that reguline metal layer and width gradual change the type metal level is one-time formed entirety.
A kind of 4. lateral double diffusion metal oxide semiconductor field effect with width gradual change type field plate as claimed in claim 1
Ying Guan, it is characterised in that the length of the width gradual change type metal level is different.
A kind of 5. lateral double diffusion metal oxide semiconductor field effect with width gradual change type field plate as claimed in claim 1
Ying Guan, it is characterised in that the width gradual change type Metal field plate includes the multiple width gradual change types first arranged in the width direction
Metal level and the multiple width gradual change type second metal layers arranged in the width direction；The width gradual change type the first metal layer and width
The length for spending gradation type second metal layer is different.
A kind of 6. lateral double diffusion metal oxide semiconductor field effect with width gradual change type field plate as claimed in claim 5
Ying Guan, it is characterised in that the width gradual change type the first metal layer and width gradual change type second metal layer are staggered.
A kind of 7. lateral double diffusion metal oxide semiconductor field effect with width gradual change type field plate as claimed in claim 1
Ying Guan, it is characterised in that the space filled media layer between the source metal and drain metal.
A kind of 8. lateral double diffusion metal oxide semiconductor field effect with width gradual change type field plate as claimed in claim 7
Ying Guan, it is characterised in that the thickness sum of connection field oxide below the dielectric layer, field oxide and dielectric layer is more than 1 μm.
A kind of 9. lateral double diffusion metal oxide semiconductor field effect with width gradual change type field plate as claimed in claim 1
Ying Guan, it is characterised in that by the length of adjustment width gradation type metal level or the Fade rate of regulation metal layer width, adjust
The quantity of electric charge sensed on byte wide gradation type Metal field plate.
A kind of 10. driving chip applied on printer, motor or flat-panel monitor, it is characterised in that including：Using
Any lateral double diffusion metal oxide semiconductor field-effect with width gradual change type field plate described in claim 1-9
Pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711052150.7A CN107845675B (en) | 2017-10-30 | 2017-10-30 | Transverse double-diffusion metal oxide semiconductor field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711052150.7A CN107845675B (en) | 2017-10-30 | 2017-10-30 | Transverse double-diffusion metal oxide semiconductor field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107845675A true CN107845675A (en) | 2018-03-27 |
| CN107845675B CN107845675B (en) | 2020-02-18 |
Family
ID=61682099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711052150.7A Active CN107845675B (en) | 2017-10-30 | 2017-10-30 | Transverse double-diffusion metal oxide semiconductor field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107845675B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110718585A (en) * | 2018-09-05 | 2020-01-21 | 成都芯源系统有限公司 | LDMOS device and manufacturing method thereof |
| CN112382658A (en) * | 2020-08-28 | 2021-02-19 | 电子科技大学 | Low gate charge device with stepped discrete shield trenches and method of making the same |
| CN112447843A (en) * | 2019-09-02 | 2021-03-05 | 无锡华润上华科技有限公司 | Field plate and lateral diffusion metal oxide semiconductor device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4344080A (en) * | 1978-12-05 | 1982-08-10 | Siemens Aktiengesellschaft | Field effect transistor |
| EP0714135A1 (en) * | 1994-11-08 | 1996-05-29 | STMicroelectronics S.r.l. | Integrated device with a structure for protection against high electric fields |
| CN101651141A (en) * | 2008-08-11 | 2010-02-17 | 恩益禧电子股份有限公司 | Semiconductor device and method of manufacturing the semiconductor device |
| US20160172486A1 (en) * | 2014-12-12 | 2016-06-16 | Samsung Electronics Co., Ltd. | Semiconductor device |
| CN105742365A (en) * | 2016-04-14 | 2016-07-06 | 东莞电子科技大学电子信息工程研究院 | Radio-frequency LDMOS transistor and manufacturing method thereof |
| CN106057797A (en) * | 2010-10-26 | 2016-10-26 | 德克萨斯仪器股份有限公司 | Hybrid active-field gap extended drain MOS transistor |
-
2017
- 2017-10-30 CN CN201711052150.7A patent/CN107845675B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4344080A (en) * | 1978-12-05 | 1982-08-10 | Siemens Aktiengesellschaft | Field effect transistor |
| EP0714135A1 (en) * | 1994-11-08 | 1996-05-29 | STMicroelectronics S.r.l. | Integrated device with a structure for protection against high electric fields |
| CN101651141A (en) * | 2008-08-11 | 2010-02-17 | 恩益禧电子股份有限公司 | Semiconductor device and method of manufacturing the semiconductor device |
| CN106057797A (en) * | 2010-10-26 | 2016-10-26 | 德克萨斯仪器股份有限公司 | Hybrid active-field gap extended drain MOS transistor |
| US20160172486A1 (en) * | 2014-12-12 | 2016-06-16 | Samsung Electronics Co., Ltd. | Semiconductor device |
| CN105742365A (en) * | 2016-04-14 | 2016-07-06 | 东莞电子科技大学电子信息工程研究院 | Radio-frequency LDMOS transistor and manufacturing method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110718585A (en) * | 2018-09-05 | 2020-01-21 | 成都芯源系统有限公司 | LDMOS device and manufacturing method thereof |
| CN112447843A (en) * | 2019-09-02 | 2021-03-05 | 无锡华润上华科技有限公司 | Field plate and lateral diffusion metal oxide semiconductor device |
| WO2021042771A1 (en) * | 2019-09-02 | 2021-03-11 | 无锡华润上华科技有限公司 | Field polar plate and laterally diffused metal oxide semiconductor device |
| CN112382658A (en) * | 2020-08-28 | 2021-02-19 | 电子科技大学 | Low gate charge device with stepped discrete shield trenches and method of making the same |
| CN112382658B (en) * | 2020-08-28 | 2021-08-24 | 电子科技大学 | Low gate charge device with stepped discrete shield trenches and method of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107845675B (en) | 2020-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8564057B1 (en) | Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield | |
| CN107871778B (en) | Lateral double-diffusion metal oxide semiconductor field effect transistor with potential floating type field plate | |
| CN103165678B (en) | Super junction lateral double-diffused metal-oxide semiconductor (LDMOS) device | |
| WO2012055225A1 (en) | High voltage ldmos device | |
| CN107680997B (en) | Lateral double-diffusion metal oxide semiconductor field effect transistor with adjustable field plate | |
| TW201427024A (en) | Vertical DMOS transistor | |
| US20150137192A1 (en) | High voltage junction field effect transistor | |
| CN103280457B (en) | A kind of horizontal high voltage power device of Ultra-low Specific conducting resistance and manufacture method | |
| CN106816468B (en) | Lateral diffusion metal oxide semiconductor field effect transistor with RESURF structure | |
| CN105070760B (en) | A kind of power MOS (Metal Oxide Semiconductor) device | |
| CN107887426A (en) | A kind of p-type LDMOS structure with electric charge adjustable type field plate | |
| CN103413830B (en) | A kind of laterally high-voltage MOSFET and manufacture method thereof | |
| US10283587B2 (en) | Modulated super junction power MOSFET devices | |
| CN107845675A (en) | Lateral double diffusion metal oxide semiconductor FET with width gradual change type field plate | |
| CN104835836B (en) | A kind of lateral super-junction bilateral diffusion metal oxide semiconductor field-effect tube with dual field modulation | |
| CN106876464A (en) | A kind of lateral double diffusion metal oxide semiconductor FET | |
| CN107863379A (en) | A kind of N-type LDMOS structure with field plate supplementary doping area | |
| WO2017059739A1 (en) | Laterally diffused metal-oxide semiconductor field-effect transistor | |
| CN107564965B (en) | Transverse double-diffusion MOS device | |
| CN105140288B (en) | Radio frequency ldmos device | |
| CN107546274B (en) | LDMOS device with step-shaped groove | |
| CN208028069U (en) | Novel two-sided step buried oxide SOI LDMOS with buried structure | |
| CN108258050A (en) | High K dielectric channel lateral super-junction bilateral diffusion metal oxide elemental semiconductor field-effect tube and preparation method thereof | |
| CN109192777B (en) | Deep-groove semi-super-junction structure power device and manufacturing method | |
| TW200812081A (en) | High voltage device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211116 Address after: 250101 Room 101, building 15, strategic emerging industry base, Jinan hi tech Zone, No. 2966, Chunhui Road, Jinan hi tech Zone, Shandong Province Patentee after: Jinan Banyi Electronics Co., Ltd Address before: 250022 No. 336, nanxinzhuang West Road, Jinan City, Shandong Province Patentee before: Jinan University |