CN107680936B - 制作半导体器件的方法 - Google Patents
制作半导体器件的方法 Download PDFInfo
- Publication number
- CN107680936B CN107680936B CN201710649147.7A CN201710649147A CN107680936B CN 107680936 B CN107680936 B CN 107680936B CN 201710649147 A CN201710649147 A CN 201710649147A CN 107680936 B CN107680936 B CN 107680936B
- Authority
- CN
- China
- Prior art keywords
- semiconductor wafer
- grinder
- stage
- during
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 173
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 47
- 238000000227 grinding Methods 0.000 claims abstract description 115
- 238000000926 separation method Methods 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 39
- 239000002245 particle Substances 0.000 claims abstract description 33
- 238000005498 polishing Methods 0.000 claims abstract description 26
- 238000003801 milling Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 101
- 239000000758 substrate Substances 0.000 description 26
- 239000000356 contaminant Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 11
- 238000012360 testing method Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 206010006514 bruxism Diseases 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本发明涉及制作半导体器件的方法。本发明提供了一种具有基础材料的半导体晶片。该半导体晶片可以具有边缘支撑环。该半导体晶片的表面的研磨阶段将基础材料的一部分移除。在分离阶段期间,将研磨机从该半导体晶片的表面移除或抬离。在研磨阶段和分离阶段期间,冲洗该半导体晶片的表面和研磨机的下方以移除颗粒。从冲洗溶液源分配冲洗溶液以冲洗该半导体晶片的表面。冲洗溶液源可以在分配冲洗溶液以冲洗所述半导体晶片的表面的同时移动在适当位置。在整个研磨操作期间,当研磨导电TSV时,或者在最终研磨阶段期间,重复研磨阶段和分离阶段直到达到半导体晶片的最终厚度。
Description
技术领域
本发明整体涉及半导体器件以及制作半导体器件的方法,并且更具体地讲,涉及半导体晶片和使用研磨阶段和分离阶段以减少表面损坏的晶片薄化方法。
背景技术
半导体器件在现代电子产品中很常见。电子部件中半导体器件的数量和密度各不相同。半导体器件执行多种多样的功能,诸如模数信号处理、传感器、电磁信号的发送和接收、电子器件控制、功率管理以及音频/视频信号处理。分立的半导体器件通常包含一种类型的电子部件,例如,发光二极管(LED)、小信号晶体管、电阻器、电容器、电感器、二极管、整流器、晶闸管以及功率金属氧化物半导体场效应晶体管(MOSFET)。集成半导体器件通常包括数百至数百万的电子部件。集成半导体器件的示例包括微控制器、专用集成电路(ASIC)、电源转换器件、标准逻辑器件、放大器、时钟管理器件、存储器、接口电路以及其它信号处理电路。
半导体晶片包括基础衬底材料和多个半导体管芯,所述多个半导体管芯形成在晶片的有源表面上,通过锯道分开。图1a示出了具有基础衬底材料12、有源表面14和背表面16的常规半导体晶片10。导电通孔18穿过半导体晶片10而形成以用于电互连。导电通孔18是在晶片薄化之前产生的并且可由钨或其它硬质金属制成,有时在导电通孔和基础衬底材料12之间设有氧化物材料用于隔离。
许多应用需要降低半导体管芯的高度或厚度,以使半导体封装件的尺寸最小化。图1b示出了研磨操作,其中砂轮20将基础衬底材料12的一部分从半导体晶片10的背表面16移除并且减小半导体晶片的厚度。砂轮20以该砂轮的恒定进给速率操作而进入研磨表面中。砂轮20通常在到达导电通孔18之前穿过基础衬底材料12的某个部分。研磨操作在研磨表面上留下来自基础衬底材料12、导电通孔18和砂轮20的颗粒22以及其它污染物。颗粒和污染物22卡在砂轮齿部21之间以及砂轮20和基础衬底材料12之间。砂轮连同各种颗粒和污染物22的旋转在最终研磨后表面26中形成表面裂缝、凿孔和其它损坏24,如图1c所示。特别地,钨制导电通孔18是脆性的并且易裂开并卡在砂轮和研磨表面之间,从而在最终研磨后表面26中留下裂缝、凿孔、划痕和其它损坏24。对最终表面26的损坏可能导致半导体晶片10无法通过检查。另外,最终研磨后表面26中的裂缝、凿孔和其它损坏24可能产生应力集中点,这可能导致晶片和管芯的断裂并且降低产量。
发明内容
根据本发明的一个方面,提供一种制作半导体器件的方法,包括:提供半导体晶片,所述半导体晶片包括基础材料;在研磨阶段期间,使用研磨机研磨所述半导体晶片的表面以将所述基础材料的一部分移除;在分离阶段期间,将所述研磨机从所述半导体晶片的所述表面抬离,同时保持所述研磨机位于所述半导体晶片上方;在所述分离阶段期间,冲洗所述半导体晶片的所述表面和所述研磨机的下方以将颗粒移除;以及在所述分离阶段期间,反转所述研磨机的旋转运动。
根据本发明的另一个方面,提供一种制作半导体器件的方法,包括:使用研磨机对半导体晶片的表面执行研磨阶段;在分离阶段期间,将所述研磨机与所述半导体晶片的所述表面分离,其中所述研磨机位于所述半导体晶片上方;冲洗所述半导体晶片的所述表面和所述研磨机的下方;以及在所述分离阶段期间,反转所述研磨机的旋转运动。
根据本发明的又一个方面,提供一种使半导体晶片薄化的方法,所述方法包括:提供半导体晶片,所述半导体晶片包括基础材料;在研磨阶段期间,使用研磨机研磨所述半导体晶片的表面以将所述基础材料的一部分移除;在分离阶段期间,仅在z轴上将所述研磨机从所述半导体晶片的所述表面抬离,冲洗所述半导体晶片的表面和研磨机的下方;以及在所述分离阶段期间,反转所述研磨机的旋转运动。
根据本发明的再一个方面,提供一种使半导体晶片薄化的方法,所述方法包括:使用研磨机对半导体晶片的表面执行研磨阶段;在分离阶段期间,仅沿着z轴将所述研磨机与所述半导体晶片的所述表面分离,冲洗所述半导体晶片的表面和研磨机的下方;以及在所述分离阶段期间,反转所述研磨机的旋转运动。
附图说明
图1a-图1c示出了在最终研磨后表面中留下裂缝、凿孔和其它损坏的常规半导体晶片研磨过程;
图2a-图2c示出了具有由锯道分开的多个半导体管芯的半导体晶片;并且
图3a-图3n示出了使用研磨阶段和分离阶段以减少表面损坏的晶片薄化过程。
具体实施方式
下文参照附图描述了一个或多个实施方案,其中类似的数字表示相同或相似的元件。虽然按照实现某些目标的最佳模式描述了附图,但描述旨在涵盖可包括在本公开的实质和范围内的替代形式、修改形式和等同形式。如本文使用的术语“半导体管芯”兼指该词语的单数形式和复数形式,并且相应地,可同时涉及单个半导体器件和多个半导体器件。
半导体器件一般采用两种复杂的制造工艺制造:前端制造和后端制造。前端制造涉及在半导体晶片的表面上形成多个管芯。晶片上的每个管芯可包含有源电子部件、无源电子部件以及光学器件,它们被电连接以形成功能电路。有源电子部件诸如晶体管和二极管具有控制电流流动的能力。无源电子部件诸如电容器、电感器和电阻器形成执行电路功能所必需的电压电流关系。光学器件通过将光波或电磁辐射的可变衰减转换成电信号来检测和记录图像。
后端制造是指将成品晶片切割或切割成单独的半导体管芯,并封装半导体管芯以实现结构支撑、电互连和环境隔离。使用等离子蚀刻、激光切割工具或锯片沿晶片的非功能区(称为锯道或划线)对晶片进行切割。在切割后,单独半导体管芯被安装至封装衬底,该封装衬底包括用于与其它系统部件互连的引脚或互连焊盘。在半导体管芯上方形成的互连焊盘随后连接到封装件内的互连焊盘。电连接可通过导电层、凸块、螺柱凸块、导电胶或焊丝而形成。密封剂或其它模制材料沉积在封装件上方,以提供物理支撑和电绝缘隔离。然后,将成品封装件插入到电系统中,并且半导体器件的功能便可提供给其它系统部件使用。
图2a示出了具有基础衬底材料102诸如硅、锗、磷化铝、砷化铝、砷化镓、氮化镓、磷化铟、碳化硅或其它基体半导体材料的半导体晶片100。多个半导体管芯104形成在晶片100上,通过无源锯道106分开,如上所述。锯道106提供切割区域以将半导体晶片100分离成单独半导体管芯104。在一个实施方案中,半导体晶片100的宽度或直径为100毫米-450毫米(mm),并且厚度为675微米-775微米(μm)。在另一个实施方案中,半导体晶片100的宽度或直径为150mm-300mm。
图2b示出半导体晶片100的一部分的剖面图。每个半导体管芯104具有背表面108以及有源表面或区域110,该有源表面或区域包含模拟或数字电路,该模拟或数字电路实现为形成在管芯内并根据管芯的电学设计和功能而电互连的有源器件、无源器件、导电层和介电层。例如,电路可包括一个或多个晶体管、二极管以及其它电路元件,这些元件形成在有源表面或区域110内以实现模拟电路或数字电路,诸如数字信号处理器(DSP)、微控制器、ASIC、电源转换器件、标准逻辑器件、放大器、时钟管理器件、存储器、接口电路、以及其它信号处理电路。半导体管芯104还可包含用于射频信号处理的集成无源器件(IPD),诸如电感器、电容器和电阻器。有源表面110可包含图像传感器区域,该图像传感器区域被实现为互补金属氧化物半导体(CMOS)或N型金属氧化物半导体(NMOS)技术中的半导体电荷耦合器件(CCD)和有效像素传感器。另选地,半导体管芯104可为光学透镜、检测器、垂直腔面发射激光器(VCSEL)、波导、堆叠管芯、电磁(EM)滤波器或多芯片模块。
使用PVD、CVD、电解电镀、无电镀工艺、蒸镀或其它合适金属沉积工艺在有源表面110上方形成导电层112。导电层112包括铝(Al)、铜(Cu)、锡(Sn)、镍(Ni)、金(Au)、银(Ag)、钨(W)、钛(Ti)、钛钨(TiW)或其它合适导电材料的一个或多个层。导电层112用作电连接至有源表面110上的电路的互连焊盘。
使用机械钻孔、激光钻孔或深度反应离子蚀刻(DRIE)穿过半导体晶片100形成多个通孔。使用电解电镀、无电镀工艺或其它合适金属沉积工艺向通孔填充Al、Cu、Sn、Ni、Au、Ag、W、Ti、TiW、多晶硅或其它合适导电材料,以便形成嵌入半导体管芯104内的z方向导电穿硅通孔(TSV)114。
作为质量控制流程的一部分,半导体晶片100经过电测试和检查。使用人工目视检查和自动光学系统对半导体晶片100进行检查。可使用软件对半导体晶片100进行自动光学分析。目视检查方法可采用诸如扫描电子显微镜、高强度光或紫外线、金相显微镜或光学显微镜等设备。检查半导体晶片100的结构特性,包括翘曲、厚度变化、表面颗粒、不规则性、开裂、分层、污染和变色。
半导体管芯104内的有源部件和无源部件经受晶片级的电性能和电路功能测试。使用包括多个探针或测试引线118的测试探头116或者其它测试设备来测试每个半导体管芯104的功能和电参数,如图2c所示。探针118用于与每个半导体管芯104上的节点或导电层112形成电接触,并且向互连焊盘112提供电刺激。半导体管芯104响应电刺激,该响应由计算机测试系统120测量并与预期响应进行比较,以测试半导体管芯的功能。电测试内容可包括电路功能、引线完整性、电阻率、连续性、可靠性、结深、ESD、射频性能、驱动电流、阈值电流、泄漏电流以及特定于部件类型的工作参数。对半导体晶片100的检查和电测试使检测合格的半导体管芯104能够被指定为用于半导体封装件的已知合格管芯。
图3a-图3n示出了使用研磨阶段和分离阶段以减少表面损坏的晶片薄化过程。图3a示出了具有背表面108、有源表面110和导电TSV 114的半导体晶片100的整个区域。半导体管芯104存在于有源表面110中,参见图2a-图2c,但是出于本发明解释的目的未作标记。半导体晶片100的研磨前厚度T1为675μm-775μm。
在图3b中,半导体晶片100倒置并安装有面向背磨胶带130的有源表面110。在图3c中,整个背表面108经受第一研磨操作,其中研磨机或砂轮132旋转,并且半导体晶片100旋转以将基础衬底材料102的一部分移除。更具体地讲,砂轮132在时间t1处被施加到基础衬底材料102,并且以循环、自旋图案移动。每次通过即可移除该研磨表面的一小部分。研磨阶段在研磨表面上留下来自基础衬底材料102、导电TSV114和砂轮132的颗粒135以及其它污染物。颗粒和污染物135卡在砂轮齿部133之间以及砂轮132和研磨表面之间。为了尤其是从砂轮132下方移除颗粒和污染物135,砂轮在z方向上移动以将砂轮与基础衬底材料102物理分离。该砂轮的向下移动可暂停而不是反转,以便允许用水冲洗而将颗粒清除。
图3d示出了在抬离或分离阶段期间在时间t2处将砂轮132从基础衬底材料102抬离。
在图3e中,在另一研磨阶段期间,在时间t3处砂轮132再次被施加到基础衬底材料102。通常存在有许多研磨阶段和分离阶段的循环,其中每次通过即可移除该研磨表面的一小部分。
在研磨阶段周期t1-t2和分离阶段周期t2-t3期间,冲洗溶液源136将冲洗溶液或水138连续地分配到研磨表面以洗去颗粒和污染物135。在分离阶段周期t2-t3期间,当将砂轮132从研磨表面抬离时,冲洗溶液138从砂轮132下方和砂轮齿部133之间清除大部分的如果不是基本上全部的颗粒和污染物135。半导体晶片100的旋转和冲洗溶液138的体积将颗粒和污染物135从砂轮132下方、磨齿133之间和研磨表面分散。
砂轮132可以在时间t2处抬离表面134,停止旋转,并且在时间t2和时间t3之间反转旋转方向。砂轮132可在分离阶段期间暂停竖直移动,或者在研磨阶段和/或分离阶段期间暂停旋转移动。研磨阶段周期t1-t2和分离阶段周期t2-t3在第一背面研磨操作期间重复,直到实现半导体晶片100的期望厚度。研磨阶段周期t1-t2的持续时间为5秒-30秒,并且分离阶段周期t2-t3的持续时间为3秒-10秒。在一个实施方案中,砂轮132在远离基础衬底材料102的z方向上抬离或移动3μm-10μm,或抬离或移动足够的高度以从砂轮齿部133清除大部分的如果不是基本上全部的颗粒和污染物135。冲洗溶液138在分离阶段周期t2-t3期间以及在研磨阶段周期t1-t2期间洗去颗粒和污染物135。另选地,冲洗溶液138被以脉冲方式施加以洗去颗粒和污染物135。冲洗溶液源136可在研磨表面上方以某个图案回旋、旋转或周向移动,以便均匀而彻底地分布冲洗溶液138。
通过将砂轮132从研磨表面抬离并且冲掉源自该研磨操作的颗粒和污染物135,在旋转或暂停时,最终表面134相对没有裂缝、凿孔和其它损坏,如背景技术中指出。可以在整个研磨操作期间,当研磨导电TSV 114时,或者在最终研磨阶段期间,实践重复的研磨阶段周期t1-t2和分离阶段周期t2-t3。砂轮132可设计有较慢轮磨损率。半导体晶片100具有介于有源表面110和最终研磨后表面134之间的约355μm的研磨后厚度T2。
在另一个实施方案中,砂轮132可以在时间t2处的研磨阶段之后停止旋转、减慢旋转或以慢于正常速率的速率自旋,同时砂轮保持在表面134上。冲洗溶液源136将冲洗溶液或水138连续地分配到研磨表面以洗去颗粒和污染物135。在时间t3处,砂轮132重新开始在先前方向上旋转,或者反转旋转方向。在第一背面研磨操作期间重复研磨阶段和停止阶段,直到实现半导体晶片100的期望厚度。
在图3f中,第二研磨操作被施加到表面134,其中研磨机或砂轮140旋转,并且半导体晶片100旋转以将基础衬底材料102的一部分移除。砂轮140以循环、自旋图案跨半导体晶片100的内部区域或者晶片研磨区域142移动。每次通过即可移除该研磨表面的一小部分。砂轮140受到控制以在半导体晶片100的周边周围留下基础衬底材料102的边缘支撑环146以实现结构支撑。
更具体地讲,研磨机或砂轮140在时间t1处被施加到基础衬底材料102,如图3f所示。研磨阶段在研磨表面上留下来自基础衬底材料102、导电TSV114和砂轮140的颗粒145以及其它污染物。颗粒和污染物145卡在砂轮齿部141之间以及砂轮140和研磨表面之间。为了尤其是从砂轮140下方移除颗粒和污染物145,砂轮在z方向上移动以将砂轮与基础衬底材料102物理分离。图3g示出了在抬离或分离阶段期间在时间t2处将砂轮140从基础衬底材料102抬离。
在图3h中,在另一研磨阶段期间,在时间t3处砂轮140再次被施加到基础衬底材料102。通常存在有许多研磨阶段和分离阶段的循环,其中每次通过即可移除该研磨表面的一小部分。
在研磨阶段周期t1-t2和分离阶段周期t2-t3期间,冲洗溶液源147将冲洗溶液或水148连续地分配到研磨表面以洗去颗粒和污染物145。在分离阶段t2-t3期间,当将砂轮140从研磨表面抬离时,冲洗溶液148从砂轮140下方和砂轮齿部141之间清除大部分的如果不是基本上全部的颗粒和污染物145。半导体晶片100的旋转和冲洗溶液148的体积将颗粒和污染物145从砂轮140下方、磨齿141之间和研磨表面分散。
砂轮140可以在时间t2处抬离表面144,停止旋转,并且在时间t2和时间t3之间反转旋转方向。砂轮140可在分离阶段期间暂停竖直移动,或者在研磨阶段和/或分离阶段期间暂停旋转移动。在第二背面研磨操作期间重复研磨阶段周期t1-t2和分离阶段周期t2-t3,直到实现半导体晶片100的期望厚度。研磨阶段周期t1-t2的持续时间为5秒-30秒,并且分离阶段周期t2-t3的持续时间为3秒-10秒。在一个实施方案中,砂轮140在远离基础衬底材料102的z方向上抬离或移动3μm-10μm,或抬离或移动足够的高度以从砂轮齿部141清除大部分的,即使不是基本上全部的颗粒和污染物145。冲洗溶液148在分离阶段周期t2-t3期间以及在研磨阶段周期t1-t2期间洗去颗粒和污染物145。另选地,冲洗溶液148被以脉冲方式施加以洗去颗粒和污染物145。冲洗溶液源147可在研磨表面上方以某个图案回旋、旋转或周向移动,以便均匀而彻底地分布冲洗溶液158。
通过将砂轮140从研磨表面抬离并且冲掉源自该研磨操作的颗粒和污染物145,在旋转或暂停时,最终表面144相对没有裂缝、凿孔和其它损坏,如背景技术中指出。可以在整个研磨操作期间当研磨导电TSV114时、或者在最终研磨阶段期间实践重复的研磨阶段周期t1-t2和分离阶段周期t2-t3。砂轮140可设计有较慢轮磨损率。在一个实施方案中,半导体晶片100的研磨后厚度T3为75μm或更小。在另一个实施方案中,半导体晶片100的研磨后厚度T3为10μm-50μm。
在另一个实施方案中,砂轮140可以在时间t2处的研磨阶段之后停止旋转,同时砂轮保持在表面134上。冲洗溶液源147将冲洗溶液或水148连续地分配到研磨表面以洗去颗粒和污染物145。在时间t3处,砂轮140重新开始在先前方向上旋转,或者反转旋转方向。在第一背面研磨操作期间重复研磨阶段和停止阶段,直到实现半导体晶片100的期望厚度。
图3i示出了砂轮140的顶视图,所述砂轮移除半导体晶片100的表面134的一部分以在研磨区域142中减小半导体晶片和对应的半导体管芯104的厚度,同时在半导体晶片的周边周围留下基础衬底材料102的边缘支撑环146。边缘支撑环146具有从半导体晶片100的内壁154到外边缘156的宽度W146,该宽度为3.0mm±0.3mm。边缘支撑环146的高度是第一研磨后厚度T2,其大于半导体晶片100的第二研磨后厚度T3,以保持较薄的半导体晶片的结构完整性。
在图3j中,使用研磨后应力消除蚀刻来移除或减少研磨工艺所造成的基础衬底材料102的表面144中的损坏。用冲洗溶液清洗半导体晶片100的表面144。使用PVD、CVD、电解电镀、无电镀工艺、蒸镀或其它合适金属沉积工艺在表面144上方形成导电层166。导电层166包括Al、Cu、Sn、Ni、Au、Ag、Ti、TiW或其它合适导电材料的一个或多个层。导电层166为半导体管芯104提供背侧电互连。根据半导体管芯104的功能,导电层166图案化为电公共部分或电绝缘部分。通过使胶带暴露于紫外(UV)线并剥离,从而移除背磨胶带130。
在图3k中,半导体晶片100安装有有源表面110,该有源表面面向薄膜框架172的胶带部分170。在图3l中,移除边缘支撑环146,以与导电层172成平面或在表面144正上方(10μm-13μm)。在图3m中,半导体晶片100从薄膜框架172移除、倒置,并且在面向薄膜框架182的胶带部分180的表面144上安装有导电层166。在图3n中,使用锯片或激光切割工具186或等离子体蚀刻沿锯道106将半导体晶片100单切成单独半导体管芯104。
虽然已详细示出并描述了一个或多个实施方案,但技术人员将认识到,在不脱离本公开的范围的情况下,可对这些实施方案作出修改和变更。
在第一实施方案中,一种制作半导体器件的方法包括:提供半导体晶片,该半导体晶片包括基础材料;在研磨阶段期间,使用研磨机研磨半导体晶片的表面以将基础材料的一部分移除;在分离阶段期间,将研磨机从半导体晶片的表面抬离;以及在分离阶段期间,冲洗半导体晶片的表面和研磨机的下方以将颗粒移除。
在第二实施方案中,第一实施方案的方法还包括:重复研磨阶段和分离阶段。
在第三实施方案中,第一实施方案的方法还包括:在研磨阶段和分离阶段期间,冲洗半导体晶片的表面以将颗粒移除。
在第四实施方案中,第一实施方案的方法还包括:将研磨机从半导体晶片的表面抬离3微米-10微米。
在第五实施方案中,第一实施方案的方法还包括:在分离阶段期间,暂停研磨机在向下方向上的移动。
在第六实施方案中,根据第一实施方案所述的方法,其中半导体晶片包括边缘支撑环。
在第七实施方案中,一种制作半导体器件的方法包括:使用研磨机对半导体晶片的表面执行研磨阶段;在分离阶段期间,将研磨机与半导体晶片的表面分离;以及冲洗半导体晶片的表面和研磨机的下方。
在第八实施方案中,第七实施方案的方法还包括:重复研磨阶段和分离阶段。
在第九实施方案中,第七实施方案的方法还包括:在研磨阶段和分离阶段期间,冲洗半导体晶片的表面。
在第十实施方案中,第七实施方案的方法还包括:将研磨机与半导体晶片的表面分离3微米-10微米。
在第十一实施方案中,第七实施方案的方法还包括:在分离阶段期间,暂停研磨机的竖直移动。
在第十二实施方案中,第七实施方案的方法还包括:在分离阶段期间,暂停研磨机的旋转移动。
在第十三实施方案中,根据第七实施方案所述的方法,其中半导体晶片包括边缘支撑环。
在第十四实施方案中,一种半导体晶片处理设备包括:用于使用研磨机对半导体晶片的表面执行研磨阶段的装置;用于在分离阶段期间将研磨机与半导体晶片的表面分离的装置;以及用于冲洗半导体晶片的表面和研磨机的下方的装置。
在第十五实施方案中,根据第十四实施方案所述的方法,其中重复研磨阶段和分离阶段。
在第十六实施方案中,根据第十四实施方案所述的方法,其中在研磨阶段和分离阶段期间,冲洗半导体晶片的表面。
在第十七实施方案中,根据第十四实施方案所述的方法,其中将研磨机与半导体晶片的表面分离3微米-10微米。
在第十八实施方案中,第十四实施方案的方法还包括用于在分离阶段期间暂停研磨机的竖直移动的装置。
在第十九实施方案中,第十四实施方案的方法还包括用于在分离阶段期间暂停研磨机的旋转移动的装置。
在第二十实施方案中,根据第十四实施方案所述的方法,其中半导体晶片包括边缘支撑环。
Claims (10)
1.一种制作半导体器件的方法,包括:
提供半导体晶片,所述半导体晶片包括基础材料;
在研磨阶段期间,使用研磨机研磨所述半导体晶片的表面以将所述基础材料的一部分移除;
在分离阶段期间,将所述研磨机从所述半导体晶片的所述表面抬离,同时保持所述研磨机位于所述半导体晶片上方;
在所述分离阶段期间,冲洗所述半导体晶片的所述表面和所述研磨机的下方以将颗粒移除;以及
在所述分离阶段期间,反转所述研磨机的旋转运动。
2.根据权利要求1所述的方法,还包括重复所述研磨阶段和所述分离阶段。
3.根据权利要求1所述的方法,还包括:在所述研磨阶段和所述分离阶段期间,冲洗所述半导体晶片的所述表面以移除所述颗粒。
4.根据权利要求1所述的方法,其中所述半导体晶片包括边缘支撑环。
5.一种制作半导体器件的方法,包括:
使用研磨机对半导体晶片的表面执行研磨阶段;
在分离阶段期间,将所述研磨机与所述半导体晶片的所述表面分离,其中所述研磨机位于所述半导体晶片上方;
在所述分离阶段期间,冲洗所述半导体晶片的所述表面和所述研磨机的下方;以及
在所述分离阶段期间,反转所述研磨机的旋转运动。
6.根据权利要求5所述的方法,还包括重复所述研磨阶段和所述分离阶段。
7.根据权利要求5所述的方法,还包括:在所述研磨阶段和所述分离阶段期间,冲洗所述半导体晶片的所述表面。
8.根据权利要求5所述的方法,其中所述半导体晶片包括边缘支撑环。
9.一种使半导体晶片薄化的方法,所述方法包括:
提供半导体晶片,所述半导体晶片包括基础材料;
在研磨阶段期间,使用研磨机研磨所述半导体晶片的表面以将所述基础材料的一部分移除;
在分离阶段期间,仅在z轴上将所述研磨机从所述半导体晶片的所述表面抬离,冲洗所述半导体晶片的表面和研磨机的下方;以及
在所述分离阶段期间,反转所述研磨机的旋转运动。
10.一种使半导体晶片薄化的方法,所述方法包括:
使用研磨机对半导体晶片的表面执行研磨阶段;
在分离阶段期间,仅沿着z轴将所述研磨机与所述半导体晶片的所述表面分离,冲洗所述半导体晶片的表面和研磨机的下方;以及
在所述分离阶段期间,反转所述研磨机的旋转运动。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202311575435.4A CN117438288A (zh) | 2016-08-02 | 2017-08-02 | 制作半导体器件的方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/226,362 | 2016-08-02 | ||
US15/226,362 US10096460B2 (en) | 2016-08-02 | 2016-08-02 | Semiconductor wafer and method of wafer thinning using grinding phase and separation phase |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311575435.4A Division CN117438288A (zh) | 2016-08-02 | 2017-08-02 | 制作半导体器件的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107680936A CN107680936A (zh) | 2018-02-09 |
CN107680936B true CN107680936B (zh) | 2023-11-17 |
Family
ID=61069312
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311575435.4A Pending CN117438288A (zh) | 2016-08-02 | 2017-08-02 | 制作半导体器件的方法 |
CN201710649147.7A Active CN107680936B (zh) | 2016-08-02 | 2017-08-02 | 制作半导体器件的方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311575435.4A Pending CN117438288A (zh) | 2016-08-02 | 2017-08-02 | 制作半导体器件的方法 |
Country Status (2)
Country | Link |
---|---|
US (3) | US10096460B2 (zh) |
CN (2) | CN117438288A (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10096460B2 (en) * | 2016-08-02 | 2018-10-09 | Semiconductor Components Industries, Llc | Semiconductor wafer and method of wafer thinning using grinding phase and separation phase |
US10204873B2 (en) * | 2017-05-08 | 2019-02-12 | Infineon Technologies Americas Corp. | Breakable substrate for semiconductor die |
JP7115850B2 (ja) * | 2017-12-28 | 2022-08-09 | 株式会社ディスコ | 被加工物の加工方法および加工装置 |
CN108705421A (zh) * | 2018-08-21 | 2018-10-26 | 德清明宇电子科技有限公司 | 一种e型磁芯打磨装置 |
US20200321236A1 (en) * | 2019-04-02 | 2020-10-08 | Semiconductor Components Industries, Llc | Edge ring removal methods |
US10727216B1 (en) | 2019-05-10 | 2020-07-28 | Sandisk Technologies Llc | Method for removing a bulk substrate from a bonded assembly of wafers |
JP7461118B2 (ja) * | 2019-08-19 | 2024-04-03 | 株式会社ディスコ | ウエーハの加工方法 |
US11063008B2 (en) * | 2019-09-16 | 2021-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and manufacturing method thereof |
JP7346374B2 (ja) * | 2020-09-23 | 2023-09-19 | 株式会社東芝 | 半導体基板及び半導体装置の製造方法 |
FR3139409B1 (fr) * | 2022-09-01 | 2024-08-23 | Soitec Silicon On Insulator | Procédé de préparation de la face avant d’une plaque de carbure de silicium polycristallin |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040092210A1 (en) * | 2002-11-07 | 2004-05-13 | Taiwan Semiconductor Manufacturing Company | Method to reduce defect/slurry residue for copper CMP |
US20090247052A1 (en) * | 2008-03-27 | 2009-10-01 | Shigeharu Arisa | Wafer grinding method and wafer grinding machine |
CN102157368A (zh) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨的残留物去除方法 |
US20160059380A1 (en) * | 2014-08-26 | 2016-03-03 | Ebara Corporation | Substrate processing apparatus |
Family Cites Families (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1933373A (en) * | 1928-09-07 | 1933-10-31 | Norton Co | Grinding and lapping machine |
JPS5222471B2 (zh) * | 1973-10-05 | 1977-06-17 | ||
US4184893A (en) * | 1976-07-13 | 1980-01-22 | E. I. Du Pont De Nemours And Company | Pulsed rinse of particulate beds |
US4276672A (en) * | 1977-11-07 | 1981-07-07 | Teague Jr Walter D | Power toothbrush or the like with orbital brush action |
USRE30537E (en) * | 1979-08-20 | 1981-03-03 | Hobart Corporation | Method for rinsing and chemically sanitizing food ware items |
USRE33849E (en) * | 1988-09-09 | 1992-03-17 | Innovative Control Systems, Inc. | Computerized car wash controller system |
KR960002336B1 (ko) * | 1990-06-09 | 1996-02-16 | 반도오 기코 가부시끼가이샤 | 유리판의 평면연마기계 |
US5531017A (en) * | 1994-02-14 | 1996-07-02 | International Business Machines Corporation | Thin film magnetic head fabrication method |
KR0132274B1 (ko) * | 1994-05-16 | 1998-04-11 | 김광호 | 웨이퍼 연마 설비 |
US5522965A (en) * | 1994-12-12 | 1996-06-04 | Texas Instruments Incorporated | Compact system and method for chemical-mechanical polishing utilizing energy coupled to the polishing pad/water interface |
JPH08238463A (ja) * | 1995-03-03 | 1996-09-17 | Ebara Corp | 洗浄方法及び洗浄装置 |
DE19546988A1 (de) * | 1995-12-15 | 1997-06-19 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Bearbeitung von Halbleitermaterial |
JP2832184B2 (ja) * | 1996-08-08 | 1998-12-02 | 直江津電子工業株式会社 | シリコン半導体デスクリート用ウエハの製造方法 |
JPH10189527A (ja) * | 1996-12-20 | 1998-07-21 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
US5816895A (en) * | 1997-01-17 | 1998-10-06 | Tokyo Seimitsu Co., Ltd. | Surface grinding method and apparatus |
JPH10329012A (ja) * | 1997-03-21 | 1998-12-15 | Canon Inc | 研磨装置および研磨方法 |
JPH10303171A (ja) * | 1997-04-28 | 1998-11-13 | Mitsubishi Electric Corp | 半導体ウェーハのウエット処理方法及びウエット処理装置 |
US5957757A (en) * | 1997-10-30 | 1999-09-28 | Lsi Logic Corporation | Conditioning CMP polishing pad using a high pressure fluid |
JPH11219930A (ja) * | 1998-01-30 | 1999-08-10 | Ebara Corp | 洗浄装置 |
JP2000015557A (ja) * | 1998-04-27 | 2000-01-18 | Ebara Corp | 研磨装置 |
JPH11347917A (ja) * | 1998-06-09 | 1999-12-21 | Ebara Corp | ポリッシング装置 |
JP2968784B1 (ja) * | 1998-06-19 | 1999-11-02 | 日本電気株式会社 | 研磨方法およびそれに用いる装置 |
US6012968A (en) * | 1998-07-31 | 2000-01-11 | International Business Machines Corporation | Apparatus for and method of conditioning chemical mechanical polishing pad during workpiece polishing cycle |
US6152809A (en) * | 1998-09-03 | 2000-11-28 | Yenawine; Peter W. | Method and apparatus for cold-end processing full-lead crystal |
US6276997B1 (en) * | 1998-12-23 | 2001-08-21 | Shinhwa Li | Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers |
US6240942B1 (en) * | 1999-05-13 | 2001-06-05 | Micron Technology, Inc. | Method for conserving a resource by flow interruption |
JP4030247B2 (ja) * | 1999-05-17 | 2008-01-09 | 株式会社荏原製作所 | ドレッシング装置及びポリッシング装置 |
JP3990073B2 (ja) * | 1999-06-17 | 2007-10-10 | 株式会社荏原製作所 | 基板洗浄装置及び基板洗浄方法 |
US6132295A (en) * | 1999-08-12 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for grinding a semiconductor wafer surface |
US6495463B2 (en) * | 1999-09-28 | 2002-12-17 | Strasbaugh | Method for chemical mechanical polishing |
US6227956B1 (en) * | 1999-10-28 | 2001-05-08 | Strasbaugh | Pad quick release device for chemical mechanical polishing |
US6547651B1 (en) * | 1999-11-10 | 2003-04-15 | Strasbaugh | Subaperture chemical mechanical planarization with polishing pad conditioning |
US6296547B1 (en) * | 1999-11-16 | 2001-10-02 | Litton Systems, Inc. | Method and system for manufacturing a photocathode |
US6340326B1 (en) * | 2000-01-28 | 2002-01-22 | Lam Research Corporation | System and method for controlled polishing and planarization of semiconductor wafers |
JP2001237208A (ja) * | 2000-02-24 | 2001-08-31 | Ebara Corp | 研磨装置の研磨面洗浄方法及び洗浄装置 |
JP2002052370A (ja) * | 2000-08-09 | 2002-02-19 | Ebara Corp | 基板洗浄装置 |
US6572444B1 (en) * | 2000-08-31 | 2003-06-03 | Micron Technology, Inc. | Apparatus and methods of automated wafer-grinding using grinding surface position monitoring |
DE10059067A1 (de) * | 2000-11-28 | 2002-06-06 | Peter Baeumler | Verfahren und Vorrichtung zur Herstellung von Zahnriemenformen und Zahnrädern |
JP4455750B2 (ja) * | 2000-12-27 | 2010-04-21 | 株式会社ディスコ | 研削装置 |
US7089081B2 (en) * | 2003-01-31 | 2006-08-08 | 3M Innovative Properties Company | Modeling an abrasive process to achieve controlled material removal |
US7118446B2 (en) * | 2003-04-04 | 2006-10-10 | Strasbaugh, A California Corporation | Grinding apparatus and method |
JP4447280B2 (ja) * | 2003-10-16 | 2010-04-07 | リンテック株式会社 | 表面保護用シートおよび半導体ウエハの研削方法 |
JP4425913B2 (ja) * | 2004-06-04 | 2010-03-03 | 東京エレクトロン株式会社 | 基板洗浄方法およびコンピュータ読取可能な記憶媒体 |
US7258599B2 (en) * | 2005-09-15 | 2007-08-21 | Fujitsu Limited | Polishing machine, workpiece supporting table pad, polishing method and manufacturing method of semiconductor device |
US7910157B2 (en) * | 2005-12-27 | 2011-03-22 | Tokyo Electron Limited | Substrate processing method and program |
JP2008198906A (ja) * | 2007-02-15 | 2008-08-28 | Sumco Corp | シリコンウェーハの製造方法 |
US20080242106A1 (en) * | 2007-03-29 | 2008-10-02 | Anuj Sarveshwar Narain | CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS FOR REDUCING MATERIAL RE-DEPOSITION DUE TO pH TRANSITIONS |
EP2225069A2 (en) * | 2007-12-19 | 2010-09-08 | Nxp B.V. | Pick and place tool grinding |
JP2009246098A (ja) * | 2008-03-31 | 2009-10-22 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
US8226774B2 (en) * | 2008-09-30 | 2012-07-24 | Princeton Trade & Technology, Inc. | Method for cleaning passageways such an endoscope channels using flow of liquid and gas |
JP5268599B2 (ja) * | 2008-12-03 | 2013-08-21 | 株式会社ディスコ | 研削装置および研削方法 |
JP2010228058A (ja) * | 2009-03-27 | 2010-10-14 | Fujikoshi Mach Corp | 研磨布の洗浄装置および洗浄方法 |
JP5405887B2 (ja) * | 2009-04-27 | 2014-02-05 | ルネサスエレクトロニクス株式会社 | 研磨装置及び研磨方法 |
JP5772092B2 (ja) * | 2011-03-11 | 2015-09-02 | 富士電機株式会社 | 半導体製造方法および半導体製造装置 |
TWI565559B (zh) * | 2011-07-19 | 2017-01-11 | 荏原製作所股份有限公司 | 研磨裝置及方法 |
US9120194B2 (en) * | 2011-07-21 | 2015-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for wafer grinding |
JP5796412B2 (ja) * | 2011-08-26 | 2015-10-21 | 三菱電機株式会社 | 半導体素子の製造方法 |
US20140106079A1 (en) * | 2012-10-11 | 2014-04-17 | Finishing Brands Holdings Inc. | System and Method for Producing a Structure with an Electrostatic Spray |
US20140323017A1 (en) * | 2013-04-24 | 2014-10-30 | Applied Materials, Inc. | Methods and apparatus using energized fluids to clean chemical mechanical planarization polishing pads |
US9868885B2 (en) * | 2013-08-07 | 2018-01-16 | Konica Minolta, Inc. | Polishing material particles, method for producing polishing material, and polishing processing method |
JP6165795B2 (ja) * | 2014-03-27 | 2017-07-19 | 株式会社荏原製作所 | 弾性膜、基板保持装置、および研磨装置 |
JP2015201598A (ja) * | 2014-04-10 | 2015-11-12 | 株式会社荏原製作所 | 基板処理装置 |
KR20160013461A (ko) * | 2014-07-25 | 2016-02-04 | 삼성전자주식회사 | 캐리어 헤드 및 화학적 기계식 연마 장치 |
JP6360750B2 (ja) * | 2014-08-26 | 2018-07-18 | 株式会社ディスコ | ウエーハの加工方法 |
US9539699B2 (en) * | 2014-08-28 | 2017-01-10 | Ebara Corporation | Polishing method |
US9984867B2 (en) * | 2014-12-19 | 2018-05-29 | Applied Materials, Inc. | Systems and methods for rinsing and drying substrates |
CN108778620B (zh) * | 2016-02-12 | 2022-05-03 | 德瑞克斯有限公司 | 具有多速磨料的电动工具磨具 |
JP6792363B2 (ja) * | 2016-07-22 | 2020-11-25 | 株式会社ディスコ | 研削装置 |
US10096460B2 (en) * | 2016-08-02 | 2018-10-09 | Semiconductor Components Industries, Llc | Semiconductor wafer and method of wafer thinning using grinding phase and separation phase |
-
2016
- 2016-08-02 US US15/226,362 patent/US10096460B2/en active Active
-
2017
- 2017-08-02 CN CN202311575435.4A patent/CN117438288A/zh active Pending
- 2017-08-02 CN CN201710649147.7A patent/CN107680936B/zh active Active
-
2018
- 2018-09-10 US US16/126,717 patent/US10998182B2/en active Active
-
2021
- 2021-05-03 US US17/306,396 patent/US20210257208A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040092210A1 (en) * | 2002-11-07 | 2004-05-13 | Taiwan Semiconductor Manufacturing Company | Method to reduce defect/slurry residue for copper CMP |
US20090247052A1 (en) * | 2008-03-27 | 2009-10-01 | Shigeharu Arisa | Wafer grinding method and wafer grinding machine |
CN102157368A (zh) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨的残留物去除方法 |
US20160059380A1 (en) * | 2014-08-26 | 2016-03-03 | Ebara Corporation | Substrate processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
US10096460B2 (en) | 2018-10-09 |
US20180040469A1 (en) | 2018-02-08 |
US10998182B2 (en) | 2021-05-04 |
US20210257208A1 (en) | 2021-08-19 |
CN107680936A (zh) | 2018-02-09 |
CN117438288A (zh) | 2024-01-23 |
US20190006169A1 (en) | 2019-01-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107680936B (zh) | 制作半导体器件的方法 | |
CN107665818B (zh) | 半导体晶片以及制备半导体器件的方法 | |
US10199316B2 (en) | Semiconductor device and method of aligning semiconductor wafers for bonding | |
US10685891B2 (en) | Semicoductor wafer and method of backside probe testing through opening in film frame | |
US20220028812A1 (en) | Semiconductor wafer and method of ball drop on thin wafer with edge support ring | |
US20220157743A1 (en) | Package structure with stacked semiconductor dies | |
US10163801B2 (en) | Structure and formation method of chip package with fan-out structure | |
US20190115313A1 (en) | Method of manufacturing semiconductor structure | |
US11694937B2 (en) | Semiconductor wafer and method of probe testing | |
US10384325B2 (en) | Dual-thickness backgrinding tape for backgrinding bumped wafers | |
US20240162051A1 (en) | Composite particulates for use as part of a supporting fill mixture in a semicondutor substrate stacking application |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |