CN107636825A - 半导体用保护膜、半导体装置及复合片 - Google Patents

半导体用保护膜、半导体装置及复合片 Download PDF

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Publication number
CN107636825A
CN107636825A CN201680031690.4A CN201680031690A CN107636825A CN 107636825 A CN107636825 A CN 107636825A CN 201680031690 A CN201680031690 A CN 201680031690A CN 107636825 A CN107636825 A CN 107636825A
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semiconductor
protective layer
diaphragm
circuit board
layer
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CN201680031690.4A
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CN107636825B (zh
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冈本直也
池田亮平
堀米克彦
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Lintec Corp
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Lintec Corp
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Abstract

本发明提供一种能够在不损害生产率、可靠性的情况下，抑制半导体芯片的翘曲的半导体用保护膜及具备该半导体用保护膜的半导体装置、以及复合片。本发明的一个实施方式的半导体用保护膜10具备由非导电性无机材料构成的保护层11和设置于保护层11的一个面上的粘合剂层12。保护层11至少含有玻璃质材料，作为典型，其由平板玻璃构成。由此，能够有效地抑制作为保护对象的半导体元件的翘曲。

Description

半导体用保护膜、半导体装置及复合片
技术领域
本发明涉及一种粘贴于例如半导体芯片等半导体元件的背面的半导体用保护膜及具备该半导体用保护膜的半导体装置、以及复合片。
背景技术
近年来，广泛进行着使用了被称为面朝下(face down)方式或倒装芯片(flipchip)连接的安装法的半导体装置的制造。在这样的安装法中，构成半导体芯片的电路面的表面(有源面)以与布线基板相对的方式而被配置，并经由形成于半导体芯片的表面的被称为凸块的多个电极而与布线基板电连接及机械连接。
以保护半导体芯片的目的，在以面朝下方式而安装的半导体芯片的背面(非有源面)上大多粘贴有保护膜。作为这样的保护膜，已知一种倒装芯片型半导体背面用膜，其具有粘合剂层和层叠于该粘合剂层上的保护层，上述保护层由耐热性树脂或金属构成(例如，参照专利文献1)。
另一方面，随着近年来的电子设备的小型化、高功能化，对搭载于该电子设备的半导体装置也要求更进一步的小型化、高功能化。因此，在各方面正推进着在半导体芯片的集成化、高密度化中所需要的PoP(Package on Package(层叠封装))等多芯片模块技术(Multi-Chip Module)的开发。
现有技术文献
专利文献
专利文献1：日本特开第2012-33626号公报
发明内容
本发明要解决的技术问题
为了实现半导体装置的小型化、薄型化，被内置的半导体芯片需要更进一步的薄型化。然而，半导体芯片越薄，则半导体芯片的刚度降低，其结果，存在因热应力而导致的半导体装置的翘曲变得更加显著的倾向。
对此，专利文献1中提出了在粘贴于半导体芯片的背面的保护膜的粘合剂层中，通过将热固化树脂相对于全部树脂成分的含量设为规定以下，从而抑制封装体的翘曲(专利文献1第[0034]段)。然而，由合成树脂构成的粘合剂层的刚度或弹性模量较低，因此无法充分地抑制半导体芯片的翘曲。
另一方面，通过使用金属构成保护层，能够确保较高的弹性模量。然而，若使用保护层由金属构成的保护膜，则会引起切割加工时加工精度的降低、切割机(刀片)的磨耗、因切割屑的附着而导致的半导体芯片电路面的短路不良等、生产率及可靠性方面上的各种问题。进一步，在使用激光等在粘合剂层表面上印字时，无法确保可见度。
鉴于以上情况，本发明的目的在于提供一种能够在不损害生产率、可靠性的情况下，抑制半导体芯片的翘曲、且进一步确保可见度的半导体用保护膜及具备该半导体用保护膜的半导体装置、以及复合片。
解决技术问题的技术手段
为了达到上述目的，本发明的一个实施方式的半导体用保护膜具备保护层和粘合剂层。
上述保护层由非导电性无机材料构成。
上述粘合剂层设置于上述保护层的一个面上。
由于上述半导体用保护膜的保护层由非导电性无机材料构成，因此与保护层由合成树脂构成的情况相比，能够提高保护层的弹性模量。由此，能够有效地抑制作为保护对象的半导体元件的翘曲。
此外，由于保护层由非导电性无机材料构成，因此与保护层由金属构成的情况相比，能够提高切割加工时的加工精度，且同时抑制切割机的磨耗及劣化。此外，即使切割屑附着于半导体芯片的电路面上，也不会产生短路不良。由此，能够谋求生产率及可靠性的提高。
构成保护层的非导电性无机材料没有特别限定，作为典型，可列举出玻璃质材料、陶瓷材料或它们的混合物等。作为玻璃质材料的典型，可列举出平板玻璃、玻璃纤维等。另外，使用于平板玻璃或玻璃纤维的玻璃的结构可以是非晶质，也可以是结晶质。
进一步，通过在非导电性无机材料中使用玻璃等具有透光性的材料，即使在使用激光等在粘合剂层表面上印字时，也能够确保可见度。
保护层由平板玻璃构成时，其厚度例如可设为10μm以上300μm以下。通过使用这样的厚度的平板玻璃，能够有助于半导体装置的薄型化，且由于保护层的柔性得到提高，因此处理变得容易。
本发明的一个实施方式的半导体装置具备布线基板、半导体元件及保护膜。
上述半导体元件以倒装芯片方式安装于上述布线基板上。
上述保护膜具有由非导电性无机材料构成的保护层和设置于上述保护层的一个面上的粘合剂层，上述粘合剂层接合于上述半导体元件的背面。
根据上述半导体装置，由于上述保护膜设置于半导体元件的背面，因此能够在抑制半导体元件的翘曲的同时，得到连接可靠性高的半导体装置。
还可在保护层的至少一个面上设置印字层。作为典型，印字层包括文字、记号、图形等，以可识别半导体元件或半导体装置的种类等的方式进行表示。作为典型，印字层由保护层或粘合剂层的至少一部分构成，例如形成于粘合剂层的与保护层粘合侧的表面上。印字层例如可通过使用激光加工法等切削保护层的表面而形成，也可以通过利用激光的照射使粘合剂层表面改性而形成。特别是在使用平板玻璃、透明陶瓷等具有透光性的材料构成保护层时，由于对保护层赋予了透光性，因此可通过激光印字等从保护层的上方容易地形成印字层。上述保护膜可以另外具有印字层。即，印字层可由与保护层及粘合剂层不同的层构成。
上述半导体装置可进一步具备与上述布线基板电连接的半导体封装体部件。在该情况下，上述半导体元件配置于上述布线基板与上述半导体封装体部件之间。
由此，能够得到抑制了翘曲的PoP结构等的半导体装置。
本发明的另一实施方式的半导体装置具备第一布线基板、第一半导体元件、第二半导体元件及第二布线基板。
上述第一半导体元件以倒装芯片方式安装于上述第一布线基板上。
上述第二布线基板配置于上述第一半导体元件与上述第二半导体元件之间。上述第二布线基板具有保护层、布线层及粘合剂层。上述保护层由非导电性无机材料构成。上述布线层设置于上述保护层上，将上述第一布线基板与上述第二半导体元件之间电连接。上述粘合剂层设置于上述保护层的一个面上，并接合于上述第一半导体元件的背面。
在上述半导体装置中，第二布线基板具有由非导电性无机材料构成的保护层，并经由粘合剂层接合于第一半导体元件的背面。由此，能够在抑制第一半导体芯片的翘曲的同时，得到连接可靠性高的半导体装置。
进一步，本发明的一个实施方式的复合片具备：在基底层的一个面侧层叠粘着剂层而成的粘着片和层叠于上述粘着片的上述粘着层侧的保护膜。
上述保护膜具有由非导电性无机材料构成的保护层和设置于上述保护层的与所述粘着层侧相反侧的面上的粘合剂层。
发明效果
根据本发明，能够在不损害生产率、可靠性的情况下，抑制半导体芯片的翘曲。
附图说明
图1为表示本发明的第一实施方式的半导体装置的构成的概略侧剖面图；
图2为图1中的重要部分的扩大图；
图3为表示本发明的一个实施方式的保护膜的概略侧剖面图；
图4为以略夸张的方式表示不具备保护膜的半导体封装体的翘曲状态的示意图；
图5为表示粘贴了具有印字层的保护膜的半导体装置的构成例的概略侧剖面图；
图6为对上述半导体装置中的第一半导体封装体的制造方法进行说明的概略工序剖面图；
图7为表示分别粘贴有构成不同的保护膜的半导体芯片的共平面性的评价结果的图；
图8为表示本发明的第二实施方式的半导体装置的构成的概略侧剖面图；
图9为表示本发明的第三实施方式的复合片的构成的概略剖面图。
具体实施方式
以下参照附图，对本发明的实施方式进行说明。
＜第一实施方式＞
图1为表示本发明的一个实施方式的半导体装置100的构成的概略侧剖面图，图2为图1中的重要部分(第一半导体封装体P1)的扩大图。
在各图中，X轴、Y轴及Z轴表示相互垂直相交的三个轴方向，Z轴方向相当于半导体装置100的高度方向(厚度方向)。
[半导体装置]
如图1所示，本实施方式的半导体装置100具有第一半导体封装体P1与第二半导体封装体P2的层叠结构(PoP：Package on Package)。
第一半导体封装体P1具有第一布线基板21、以倒装芯片方式安装(以倒装芯片方式连接)于第一布线基板21上的第一半导体芯片C1。
第二半导体封装体P2搭载于第一半导体封装体P1上。第二半导体封装体P2具有第二布线基板22、引线键合连接于第二布线基板22上的第二半导体芯片C2。第二半导体芯片C2具有由大小不同的两个半导体芯片C21、C22构成的层叠结构。
作为典型，第一半导体芯片C1、第二半导体芯片C2(C21、C22)由单晶硅(Si)基板构成，在其表面上形成有集成了晶体管、存储体等多个电路元件的电路面。
第一半导体芯片C1以使其电路面面向第一布线基板21的面朝下方式，安装于第一布线基板21的上表面。第一半导体芯片C1经由形成在其电路面(图中为下表面)上的多个凸块(突起电极)41，与第一布线基板21电连接及机械连接。将第一半导体芯片C1接合于第一布线基板21上时，例如采用使用了回流炉的回流焊接法。
作为典型，在第一半导体芯片C1与第一布线基板21之间，设有底部填充树脂层51。设置底部填充树脂层51的目的为：封闭第一半导体芯片C1的电路面及凸块41，从而隔断外部空气，进一步，提高第一半导体芯片C1与第一布线基板21之间的接合强度，确保凸块41的连接可靠性。
在第一半导体芯片C1的背面(与电路面相反侧的面，在图中为上表面)上，粘贴有用于保护该半导体芯片C1的半导体用保护膜(以下，称为保护膜)10。如后文所述，保护膜10具有抑制第一半导体芯片C1及第一半导体封装体P1的翘曲的功能。
另一方面，以使与各个电路面相反侧的背面面向第二布线基板22的面朝上(faceup)方式，将第二半导体芯片C2(C21、C22)安装于第二布线基板22的上表面。第二半导体芯片C2(C21、C22)具有分别排列在这些电路面(图中为上表面)的周围的多个电极垫板(图中省略)，经由连接于各电极垫板的多个键合引线42而与第二布线基板22电连接。在该情况下，第二布线基板22与半导体芯片C21、及两个半导体芯片C21、C22通过非导电性的粘合剂等而分别相互接合。
第二布线基板22的上表面上设置有封闭第二半导体芯片C2(C21、C22)及键合引线42的封闭层52。与底部填充树脂层51相同，封闭层52以使第二半导体芯片C2(C21、C22)的电路面与外部空气隔断、提高第二半导体芯片C2(C21、C22)与第二布线基板22的连接可靠性的目的而设置。
第一布线基板21及第二布线基板22各自可以由同种的材料构成，也可以由不同种的材料构成。作为典型，第一布线基板21及第二布线基板22由环氧玻璃基板、聚酰亚胺基板等有机类布线基板构成，但并不限于此，也可使用陶瓷基板或金属基板。布线基板的种类没有特别限定，可使用单面基板、双面基板、多层基板、元件内置基板等各种基板。在本实施方式中，第一及第二布线基板21、22分别由具有通孔V1、V2的玻璃环氧类的多层布线基板构成。
在第一布线基板21的背面(图中为下表面)，设有与被称作母基板等的控制基板110连接的多个外部连接端子31。即，第一布线基板21作为安装于第一半导体芯片C1与控制基板110之间的中介基板(子基板)而构成，且还具有将第一半导体芯片C1的电路面上的凸块51的配置间隔变为控制基板110的焊盘间距(land pitch)的作为再布线层的功能。
在第二布线基板22的背面(图中为下表面)上，设置有与第一布线基板21的表面连接的多个凸块32。即，第二布线基板22作为将第二半导体芯片C2(C21、C22)连接于第一布线基板的中介基板而构成，经由第一布线基板21及外部连接端子31，与控制基板110电连接。
作为典型，外部连接端子31及凸块41、32由焊锡凸块(球状凸块)构成，但并不限于此，也可以由电镀凸块或柱型凸块(stud bump)等其他突起电极构成。在将第二布线基板22连接于第一布线基板21上时、及将半导体装置100连接于控制基板110上时，采用回流焊接法。
在此，由于回流安装时的半导体芯片或半导体装置的翘曲变形为电子设备的故障或安装不良、可靠性降低的原因，因此成为了重要的技术问题之一。例如，在为图1所示的PoP结构的半导体装置100时，第一及第二半导体封装体P1、P2为单面封闭结构，因此容易产生翘曲。特别是由于位于下段侧的第一半导体封装体P1比位于上段侧的第二半导体封装体P2薄且封闭区域为部分区域等，因此第一半导体封装体P1比第二半导体封装体P2更容易产生翘曲。此外，若在焊锡回流时第一半导体封装体P1发生较大翘曲，则存在第二半导体封装体P2的凸块32从第一布线基板21上脱离、产生连接不良的情况。
为了解决这样的问题，本实施方式的半导体装置100使粘贴于第一半导体芯片C1的背面的保护膜10具有抑制第一半导体封装体P1的翘曲的功能。以下对保护膜10的详细内容进行说明。
[保护膜的构成]
图3为表示本发明的一个实施方式的保护膜10的概略侧剖面图。
保护膜10设置于第一半导体芯片C1的背面。保护膜10通过设置于第一半导体芯片C1的背面，以发挥提高第一半导体芯片C1的刚度、保护第一半导体芯片C1的背面、表示第一半导体芯片C1的品种、抑制第一半导体封装体P1的翘曲等各种功能的方式构成。作为典型，保护膜10如后文所述，在背面研磨(背面研削)工序后、切割加工前贴附于半导体晶圆的背面。
如图2所示，本实施方式的保护膜10具有由保护层11与粘合剂层12构成的层叠结构。如图2所示，保护膜10经由粘合剂层12粘贴于第一半导体芯片C1的背面。
另外，保护膜10通过将粘贴于用于制造第一半导体芯片C1的半导体晶圆的背面的晶圆尺寸的保护膜10F(图6(A)参照)切成芯片级别而形成。另外，本发明的保护膜当然也可用作为除图1所示的半导体装置以外的半导体芯片用保护膜。
(保护层)
保护层11作为保护膜10的基材而构成。保护层11由非导电性无机材料构成。作为非导电性无机材料，只要是适合于工件的加工、例如半导体晶圆的切割，则没有特别限定，作为典型，可列举出玻璃质材料、陶瓷材料或它们的混合物等。
作为玻璃质材料的典型，可列举出平板玻璃、玻璃纤维等。用于平板玻璃或玻璃纤维的玻璃的结构可以是非晶质，也可以是结晶质。玻璃的种类没有特别限定，作为典型，可列举出钠钙玻璃、铅玻璃、硼硅酸玻璃、石英玻璃等。平板玻璃例如优选显示器用的薄平板玻璃，特别优选可卷成卷状的具有柔性的超薄平板玻璃。作为玻璃纤维，例如可适宜地使用作为玻璃纤维纸(玻璃纸)或电池用材料(隔膜)而构成的玻璃纤维。
由于本实施方式的保护膜10的保护层11由非导电性无机材料构成，因此与保护层11由合成树脂构成的情况相比，能够提高保护层11的弹性模量。
作为典型，保护层11的弹性模量只要为能够抑制回流安装时的第一半导体封装体P1的翘曲的弹性模量，则没有特别限定。第一半导体封装体P1的翘曲主要起因于第一半导体芯片C1的线膨胀系数与第一布线基板21的线膨胀系数的不匹配，两者的线膨胀系数的差距越大，则会引起越大的翘曲。翘曲的方向虽然因材料的种类或特性等而异，但存在在加热时与冷却时相互为反方向的倾向。图4为以略夸张的方式表示不具备保护膜的半导体封装体的翘曲状态的示意图，图4(A)和图4(B)分别表示常温时的状态和高温时的状态。因此，保护层11的弹性模量优选为能够抑制在第一半导体封装体P1的两个方向上的翘曲的弹性模量。
本实施方式中，如上所述，第一半导体芯片C1由硅基板构成，第一布线基板21由玻璃环氧类的有机材料构成。第一半导体芯片C1的线膨胀系数(～10-6/℃)与第一布线基板21的线膨胀系数(～10-5/℃)差1位数左右，第一布线基板21比起第一半导体芯片C1，热膨胀(热收缩)更大。保护层11的线膨胀系数可以以第一布线基板21的线膨胀系数为基准而设定，也可以以第一半导体芯片C1的线膨胀系数为基准而设定。
例如，通过使保护层11的线膨胀系数配合第一布线基板21的线膨胀系数，或使其小于第一布线基板21的线膨胀系数，能够抑制夹在第一布线基板21与保护膜10之间的第一半导体芯片C1的变形。此外，通过使保护层11的线膨胀系数配合第一半导体芯片C1的线膨胀系数，或使其小于第一半导体芯片C1的线膨胀系数，能够提高第一半导体芯片C1的刚度，抑制因上述热应力导致的第一半导体芯片C1的变形。进一步，保护层11的线膨胀系数可设定为第一布线基板21的线膨胀系数与第一半导体芯片C1的线膨胀系数之间的适当的值。
通过以上述方式设定保护层11的线膨胀系数，能够有效地抑制第一半导体封装体P1的翘曲。构成保护层11的非导电性无机材料，从可得到目的线膨胀系数的材料中选择即可。此外，也可以以得到目的线膨胀系数的方式，对多种非导电性无机材料进行组合。
在本实施方式中，保护层11由玻璃质材料构成，更具体而言，其由平板玻璃构成。通过用平板玻璃构成保护层11，可在提高保护膜10的处理性能的同时谋求生产率的提高。平板玻璃可使用所谓的强化玻璃材料，也可使用通常的玻璃材料。平板玻璃可使用坚硬的玻璃片，也可使用具有柔性的玻璃膜。平板玻璃可使用具有光透过性的材料，但也可使用着色了的材料。
保护层11的线膨胀系数可根据构成保护层11的平板玻璃的成分、加工方法等进行选择或调节。作为典型，构成保护层11的平板玻璃的线膨胀系数可从10-5/℃～10-7/℃级别中进行选择。
构成保护层11的玻璃质材料的软化点(Tg)优选为高于回流温度的温度(例如260℃以上)。由此，能够抑制回流安装时保护层11的软化、变形，维持半导体芯片C1的翘曲抑制效果。
此外，保护层11的厚度可根据第一半导体芯片C1的尺寸(厚度、大小)、第一半导体封装体P1的尺寸(厚度、大小)、第一半导体封装体P1与第二半导体封装体P2之间的空隙等进行适当设定。在本实施方式中，作为保护层11，使用厚度例如为10μm以上300μm以下的具有柔性的平板玻璃，优选使用厚度为50μm以上200μm以下的具有柔性的平板玻璃。由此，能够在确保第一半导体封装体P1的薄型化的同时，有效地防止第一半导体封装体P1的翘曲变形。
此外，由于保护层11具有柔性，因此可将保护膜10卷成卷状，提高操作性、保存性、运输性等。此外，由于将具有柔性的玻璃膜从辊上卷出时，卷曲等的变形少，因此具有处理性能优异的优点。
这样的平板玻璃可使用市售的材料，也可根据用途使用最适宜的材料。作为市售的材料，例如可使用Nippon Electric Glass Co.,Ltd.制造的无碱超薄平板玻璃“G-Leaf”(注册商标)等。
(粘合剂层)
粘合剂层12设置于保护层11的一个面上。作为典型，粘合剂层12由热固化成分及能量射线固化性成分中的至少一种与粘结剂聚合物成分形成。
作为热固化成分，例如可列举出环氧树脂、苯酚树脂、三聚氰胺树脂、尿素树脂、聚酯树脂、氨基甲酸酯树脂、丙烯酸树脂、聚酰亚胺树脂、苯并噁嗪树脂等，及这些树脂的混合物。特别是在本实施方式中，优选使用环氧树脂、苯酚树脂及这两种树脂的混合物。
其中，在本实施方式中，优选使用双酚类缩水甘油型环氧树脂、邻甲酚线型酚醛型环氧树脂及苯酚线型酚醛型环氧树脂。这些环氧树脂可单独使用一种或组合使用两种以上。
能量射线固化性成分由受到紫外线、电子束等能量射线的照射而聚合固化的化合物构成。该化合物在分子内至少具有一个聚合性双键，通常分子量为100～30000，优选为300～10000左右。作为这样的能量射线聚合型化合物，例如可使用三羟甲基丙烷三丙烯酸酯、四羟甲基甲烷四丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇单羟基五丙烯酸酯、二季戊四醇六丙烯酸酯或1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、低聚酯丙烯酸酯、进一步可使用聚酯型或聚醚型的氨基甲酸酯丙烯酸酯低聚物或聚酯丙烯酸酯、聚醚丙烯酸酯、环氧改性丙烯酸酯等。
其中，在本实施方式中，优选使用紫外线固化型树脂，具体而言，特别优选使用低聚酯丙烯酸酯、氨基甲酸酯丙烯酸酯低聚物等。通过向能量射线固化性成分中混入光聚合引发剂，能够减少聚合固化时间及光线照射量。
使用粘结剂聚合物成分以用于给予保护层11适度的粘性，提高片的操作性。粘结剂聚合物的重均分子量通常为5万～200万，优选为10万～150万，特别优选为20万～100万的范围。若分子量过低，则片的形成变得不充分，若过高，则与其他成分的相容性变差，其结果，阻碍形成均匀的片。
作为这样的粘结剂聚合物，例如可使用丙烯酸类聚合物、聚酯树脂、氨基甲酸酯树脂、硅酮树脂、橡胶类聚合物等，特别优选使用丙烯酸类聚合物。
作为丙烯酸类聚合物，例如可列举出源自(甲基)丙烯酸酯单体及(甲基)丙烯酸衍生物的结构单元构成的(甲基)丙烯酸酯共聚物。在此，作为(甲基)丙烯酸酯单体，优选烷基的碳原子数为1～18的(甲基)丙烯酸烷基酯，例如可使用(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯等。此外，作为(甲基)丙烯酸衍生物，例如可列举出(甲基)丙烯酸、(甲基)丙烯酸缩水甘油酯、(甲基)丙烯酸羟基乙酯等。
通过将甲基丙烯酸缩水甘油酯等共聚而向丙烯酸类聚合物中导入缩水甘油基，由此提高与作为热固化型粘合成分的环氧树脂的相容性，且固化后的Tg增高，耐热性也得以提高。此外，通过使用丙烯酸羟基乙酯等而向丙烯酸类聚合物中导入羟基，使对芯片的密着性及粘着物性的控制变的容易。
此外，粘合剂层12可以被着色。粘合剂层12的着色例如可通过掺合颜料、染料等而进行。若对粘合剂层12进行着色，则能够在谋求提高外观的同时，在施加激光印字时提高其可见度、识别性。粘合剂层12的颜色没有特别限定，可以是无彩色，也可以是有彩色。在本实施方式中，粘合剂层12被着色为黑色。
进一步，以提高固化后的保护膜10与芯片背面的粘合性及密着性为目的，可在粘合剂层12中添加偶联剂。偶联剂能够在不损害保护膜10的耐热性的情况下提高粘合性、密着性，进一步，还提高耐水性(耐湿热性)。
这样的粘合剂层12可以使用市售的材料，也可以根据用途使用最适合的材料。作为市售的材料，例如可适宜地使用Lintec Corporation.制造的芯片背面保护胶带“LC胶带”系列(例如，LC2841、LC2824H、LC2826H、LC2850)。
(剥离片)
如图3所示，本实施方式的保护膜10进一步具有剥离片13，剥离片13以覆盖粘合剂层12的方式而设置，并在使用保护膜10时，从粘合剂层12上剥离。
作为剥离片13，例如可使用聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、聚氯乙烯膜、氯乙烯共聚物膜、聚对苯二甲酸乙二醇酯膜、聚萘二甲酸乙二醇酯膜、聚对苯二甲酸丁二醇酯膜、聚氨酯膜、乙烯乙乙膜、离聚物树脂膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜、聚苯乙烯膜、聚碳酸酯膜、聚酰亚胺膜、氟树脂膜等。此外，也可使用这些膜的交联膜。此外，也可为这些膜的层叠膜。
此外，剥离片1的表面张力优选为40mN/m以下，进一步优选为37mN/m以下，特别优选为35mN/m以下。这样的表面张力低的剥离片13可通过适当地选择材质而得到，或者也可通过在剥离片13的表面上涂布硅酮树脂等、实施脱模处理而得到。
剥离片13的厚度通常为5～300μm，优选为10～200μm，特别优选为20～150μm左右。
这样的剥离片13可使用市售的材料，也可根据用途使用最适合的材料。作为市售的材料，例如优选使用Lintec Corporation.制造的剥离膜“D-645H”等。
(印字层)
可在保护层11的至少一个面上设有印字层。作为典型，印字层包括文字、记号、图形等，以可识别半导体元件或半导体装置的种类等的方式进行表示。作为典型，印字层由保护层11或粘合剂层12的至少一部分构成，例如形成于粘合剂层的与保护层粘合侧的表面。印字层例如可通过使用激光加工法等对保护层11的表面进行切削而形成，也可通过利用激光的照射使粘合剂层12表面改性而形成。特别是在保护层11由平板玻璃、透明陶瓷等具有透光性的材料构成时，由于保护层11被赋予了透光性，因此可通过激光印字等从保护层的上方容易地形成粘合剂层12表面的印字层。保护膜10可另外具有印字层。即印字层可以由与保护层11及粘合剂层12不同的层构成。
图5(A)～(C)为表示粘贴有具有印字层的保护膜10的半导体装置的构成例的概略侧剖面图。
图5(A)表示在保护层11的下表面(粘合剂层12)上设置了印字层14的例子。在该情况下，印字层14由粘合剂层12的至少一部分构成，通过从保护层11的上方对粘合剂层12照射红外线激光(激光标记)而形成。由于保护层11由具有透光性的玻璃质材料构成，因此红外线激光可容易地穿过保护层11到达粘合剂层12。在该例子中，印字层14形成于保护层11与粘合剂层12的界面(粘合剂层12的与保护层11粘合侧的表面)上，并包含可透过保护层11而识别的文字、记号或图形。作为典型，印字层14表示半导体芯片或半导体装置的种类等。
图5(B)表示在保护层11的上表面上设有印字层14的例子。在本例中，印字层14可以由与粘合剂层12相同的材料构成，也可以由与粘合剂层12不同的材料构成。此外，在本例中，由于印字层14设置于保护层11的上表面上，保护层11可以为不透过红外线的层。在图5(A)、图5(B)中，对印字层14的激光标记可以在粘合剂层12的固化前进行，也可以在粘合剂层12的固化后进行。
图5(C)表示在保护层11的至少一部分上设有印字层14的例子。在保护层11由玻璃质材料等具有透光性的非导电性无机材料构成时，可进行激光加工或使用了微切削的表面加工。具体而言，例如可使用可对保护层11进行加工的(玻璃质材料可吸收的)激光，在保护层11的表面写上印字信息。由上述方式形成的印字层14，可通过由正面或斜方向目视确认保护层11，从而使印字信息浮现于保护层11的表面。
[半导体装置的制造方法]
接着，对具有保护膜10的半导体装置，特别是对第一半导体封装体P1的制造方法进行说明。
图6(A)～图6(E)为对第一半导体封装体P1的制造方法进行说明的概略工序剖面图。
首先，如图6(A)所示，在通过背面研磨工序而被薄化为规定厚度(例如50μm)的半导体晶圆W的背面(图中为上表面)，粘贴保护膜10F。保护膜10F例如形成为与半导体晶圆W约同等的大小、形状，并经由粘合剂层12粘贴于半导体晶圆W的背面。在粘贴于半导体晶圆W前，从粘合剂层12上剥离保护膜10的剥离片13(参照图3)。然后，粘合剂层12通过加热处理或能量射线照射处理而固化。
通过将保护膜10F粘贴于半导体晶圆W，半导体晶圆W的表观厚度增加，其结果，半导体晶圆W的刚度提高，同时处理性能及切割适宜性得到提高。由此，能够有效地保护半导体晶圆W以避免损伤或破损。
然后，在保护膜10F上形成表示产品信息的印字层14(图5(A))。印字层14通过穿过保护层11对粘合剂层12照射红外线激光而形成(激光标记)。通过以晶圆级别进行印字层14的形成，能够有效地对各个芯片区域打印规定的产品信息。
然后，如图6(B)所示，粘合有保护膜10F的半导体晶圆W被安装于切割胶带(dicingtape)T的粘着面上。将切割胶带T以使设置于其一个面上的粘着层朝向上的方式，配置于未图示的切割台上，通过环形框架(ring frame)F固定。将半导体晶圆W以其电路面朝向上的方式，经由保护膜10F固定于切割胶带T上。
然后，如图6(C)所示，通过切割刀D，将半导体晶圆W以每电路(以芯片单元)进行切割。此时，切割刀D的刀片以到达至切割胶带T的上表面(粘着面)的深度切断半导体晶圆W，由此，保护膜10F与半导体晶圆W一同以芯片单元被切断，形成对应各半导体芯片C1的保护膜10。
然后，如图6(D)所示，通过夹头K将半导体芯片C1与保护膜10一同从切割胶带T的粘着层上剥离。然后，使焊剂附着于半导体芯片C1的电路面(凸块)上，如图6(E)所示，使用贴片机M(mounter)，将半导体芯片(第一半导体芯片)C1以倒装芯片方式安装于布线基板(第一布线基板)21上。
根据本实施方式，由于在半导体芯片C1的背面粘合有保护膜10，因此半导体芯片C1的表观刚度增高，由此在切割适宜性得到提高的同时，能够防止芯片由于以下工序等中起作用的应力而破损：从切割胶带上拾取的工序或安装于布线基板上的工序。
此外，由于保护层11由玻璃质材料(非导电性无机材料)构成，因此与保护层11由金属构成的情况相比，在提高了切割加工时的加工精度的同时，能够抑制切割机(刀片)的磨耗及劣化。此外，即使切割屑附着在半导体芯片C1的电路面上，也不会产生短路不良。由此，可谋求生产率及可靠性的提高。
进一步，根据本实施方式，由于保护层11由玻璃质材料构成，因此能够抑制在将半导体芯片C1回流安装于布线基板21的工序中的半导体芯片C1的翘曲。
图7(A)、图7(B)示出了分别粘贴有构成不同的两个保护膜的半导体芯片的共平面性(Coplanarity)的评价结果。评价中使用的硅半导体芯片的厚度为50μm，大小为10mm×10mm，评价了在玻璃环氧类布线基板上进行回流安装后的芯片的上表面(保护膜的上表面)的翘曲量。
作为回流条件，进行了三次预加热温度为130℃、加热温度(最高温度)为260℃、加热时间(加热温度下的保持时间)为1分钟的IR回流。回流炉使用了Sagami-Rikou Co.Ltd.制造的“WL-15-20DNX型”。此外共平面性(Coplanarity)的评价装置使用了Akrometrix公司制造的“サーモレイPS200e”。
然后，在图7(A)所示的样本中，使用厚度为25μm的Lintec Corporation.制造的保护胶带“LC2850”(以下，称为保护胶带)作为保护膜，在图7(B)所示的样本中，使用了上述保护胶带与厚度为100μm的玻璃膜(Nippon Electric Glass Co.,Ltd.制造的超薄平板玻璃“G-Leaf”(注册商标))的层叠体(相当于本实施方式的保护膜10)作为保护膜。
作为评价的结果，在图7(A)所示的样本中，芯片的翘曲为214μm，相对于此，在图7(B)所示的样本中，芯片的翘曲为56μm。此外，虽未图示，将上述玻璃膜的厚度设为50μm时芯片的翘曲量为111μm。
另外，作为参考例，层叠了厚度为30μm的铝膜来代替上述玻璃膜时的芯片的翘曲量为106μm，层叠了厚度为40μm的铝膜来代替上述玻璃膜时的芯片的翘曲量为69μm。
如上所述，由于根据本实施方式，能够抑制第一半导体芯片C1的翘曲，因此能够稳定地制造翘曲少的第一半导体封装体P1。因此，由于在第一半导体封装体P1上安装第二半导体封装体P2、在控制基板110上安装半导体装置100时，第一半导体封装体P1或半导体装置100的翘曲也得到有效地抑制，因而，能够防止因翘曲变形导致的各端子部的连接可靠性的降低。
＜第二实施方式＞
图8为表示本发明的另一实施方式的半导体装置200的构成的概略侧剖面图。以下，主要对不同于第一实施方式的构成进行说明，对于与上述的实施方式相同的构成，则使用相同的符号并省略或简化对其的说明。
对于本实施方式的半导体装置200，虽在具有与第一实施方式相同的PoP结构的方面上是共通的，但在第二半导体封装体P2中的第二布线基板210的基材211由玻璃质材料构成、且其同时作为第一半导体芯片C1的保护层而构成的方面上则与第一实施方式不同。
在本实施方式中，第二布线基板210具有基材211、布线层(通孔V2)及粘合剂层212。基材211由玻璃质材料构成。上述布线层具有设置于基材211的上表面及下表面的布线图案及设置于基材211内部的层间连接部(通孔V2)，将第一布线基板21与第二半导体芯片C2(C21、C22)之间电连接。粘合剂层212设置于基材211的下表面，接合于第一半导体芯片C1的背面(图中为上表面)。
基材211的厚度只要能够确保作为布线基板所要求的规定刚度的大小，则没有特别限定，例如可使用50μm以上300μm以下的厚度的基材。基材211的形态没有特别限定，可以形成为自支撑性(自立性)高的坚硬片状，也可以形成为具有柔性的膜状。作为典型，构成基材211的玻璃质材料可以使用平板玻璃，但除此以外，也可以使用玻璃纤维的层叠体、玻璃粉末的烧结体等。
另外，基材211也可由除玻璃质材料以外的其他非导电性无机材料，例如由陶瓷板等构成。
粘合剂层212以与第一实施方式(粘合剂层12)相同的方式构成。粘合剂层212作为封闭层而发挥作用，其使基材211与第一半导体芯片C1相互密着，将第一半导体芯片C1的背面与外部空气隔断。
图示的粘合剂层212可以仅设置于与第一半导体芯片C1的背面相对的区域，但并不限于此，也可以将粘合剂层212设置于基材211的下表面的全部区域。在该情况下，在粘合剂层212中，可以在设有凸块32的位置上形成开口部，粘合剂层212自身也可以由导电性粘合层或例如ACF(anisotropic conductive film(异方向性导电膜))/ACP(anisotropicconductive paste(各向异性导电膏))的各向异性导电材料构成。
在以上述方式构成的本实施方式的半导体装置200中，第二布线基板210具有由玻璃质材料构成的基材211，并经由粘合剂层212接合于第一半导体芯片C1的背面。由此，例如，在回流安装于控制基板110上时，能够有效地抑制第一半导体芯片C1的翘曲，因此能防止半导体装置200的翘曲变形，且可提高各端子部的连接可靠性。
此外，根据本实施方式，由于第二布线基板210的粘合剂层212接合于第一半导体芯片C1的背面，因此第一半导体封装体P1与第二半导体封装体P2的接合变得更加牢固，能够提高凸块32的连接可靠性。此外，由于第二布线基板210与第一半导体芯片C1的间隙为零，因此还能够有助于半导体装置200的薄型化。
＜第三实施方式＞
图9为表示本发明的其他的实施方式的复合片300的构成的概略侧剖面图。以下，主要对不同于第一实施方式的构成进行说明，对于与上述的实施方式相同的构成，则使用相同的符号并省略或简化对其的说明。
如图9所示，本实施方式的复合片300以具备在基底层71的一个面上层叠粘着剂层72而成的粘着片70和层叠于粘着片70的粘着层72侧的保护膜10的方式构成。
保护膜10以与第一实施方式相同的方式构成，具有由非导电性无机材料构成的保护层11和设置于保护层11的与粘着层74侧相反侧的面上的粘合剂层12。
在加工工件时，复合片300贴附于该工件上并固定该工件，且用于在该工件或加工该工件而得到的加工物上形成保护膜。该保护膜由保护膜10构成，优选为由粘合剂层12已固化的保护膜10构成。
作为一个例子，在对作为工件的半导体晶圆进行切割加工时，复合片300固定半导体晶圆，且用于在通过切割而得到的半导体芯片上形成保护膜，但并不限于此。该情况下的复合片300的粘着片70通常被称为切割片。
粘着片70的基底层71只要是适合于工件的加工、例如半导体晶圆的切割及扩张，则其构成材料没有特别限定，通常由以树脂类的材料作为主要材料的膜(以下称为“树脂膜”)构成。
作为树脂膜的具体例，可列举出低密度聚乙烯(LDPE)膜、直链低密度聚乙烯(LLDPE)膜、高密度聚乙烯(HDPE)膜等聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、乙烯-降冰片烯共聚物膜、降冰片烯树脂膜等聚烯烃类膜；乙烯-乙酸乙烯酯共聚物膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜等乙烯类共聚合膜；聚氯乙烯膜、氯乙烯共聚物膜等聚氯乙烯类膜；聚对苯二甲酸乙二醇酯膜、聚对苯二甲酸丁二醇酯膜等聚酯类膜；聚氨酯膜；聚酰亚胺膜；聚苯乙烯膜；聚碳酸酯膜；氟树脂膜等。也可使用这些膜的交联膜、如离聚物膜的改性膜。基底层71可以是由这些膜中的一种构成的膜，也可以是由这些膜中的两种以上组合而成的层叠膜。另外，本说明书中的“(甲基)丙烯酸”是指丙烯酸及甲基丙烯酸这两者。其他的类似用语也相同。
在上述中，从环境安全性、成本等角度出发，优选聚烯烃类膜，其中优选耐热性优异的聚丙烯膜。若为聚丙烯膜，则能够在不损害粘着片70的扩张适宜性及芯片的拾取适宜性的情况下，赋予基底层71耐热性。通过使基底层71具有该耐热性，即使在贴附有工件的状态下使保护膜10热固化的情况下，也能够抑制粘着片70的松弛的产生。
上述树脂膜以提高与在其表面层叠的粘着剂层72的密着性的目的，可根据所需在单面或双面，施加基于氧化法或粗糙化法等的表面处理、或底漆处理。作为上述氧化法，例如可列举出电晕放电处理、等离子放电处理、铬氧化处理(湿式)、火焰处理、热风处理、臭氧、紫外线照射处理等，此外，作为粗糙化法，例如可列举出喷砂法、溶射处理法等。
只要能够在使用复合片300的各工序中适当地发挥功能，则基底层71的厚度没有特别限定。优选为20～450μm，更优选为25～400μm，特别优选为50～350μm的范围。
粘着剂层72可以由非能量射线固化性粘着剂构成，也可以由能量射线固化性粘着剂构成。作为非能量射线固化性粘着剂，优选具有所需的粘着力及再剥离性的粘着剂，例如可使用丙烯酸类粘着剂、橡胶类粘着剂、硅酮类粘着剂、氨基甲酸酯类粘着剂、聚酯类粘着剂、聚乙烯醚类粘着剂等。其中，优选与保护膜10的密着性高、能够有效地抑制切割工序等中工件或加工物的脱落的丙烯酸类粘着剂。
另一方面，由于能量射线固化性粘着剂因能量射线照射而粘着力降低，因此在需要分离工件或加工物与粘着片70时，通过进行能量射线照射，能够使其容易地分离。
只要在使用复合片300的各工序中能够适当地发挥功能，则粘着剂层72的厚度没有特别限定。具体而言，优选1～50μm，特别优选2～30μm，进一步优选3～20μm。
以上，对本发明的实施方式进行了说明，但本发明当然不仅限于上述的实施方式，还可加入各种变更。
例如在以上的各实施方式中，作为半导体元件，以半导体(Si)芯片为例进行了举例说明，但也可使用GaAs(砷化镓)等其他半导体裸芯片部件，也可使用CSP(Chip SizePackage(芯片尺寸封装))等封装体部件。
进一步，在第一实施方式中，保护膜10的粘合剂层12还可由含有玻璃质材料等非导电性无机材料的材料构成。由此，由于可提高保护膜10整体的刚度(弹性模量)，因此能够进一步抑制第一半导体芯片C1的翘曲。此外，也可由粘合剂层12单独构成保护膜10，从而可实现保护膜的薄化。
附图标记说明
10、10F：保护膜；11：保护层；12、212：粘合剂层；13：剥离片；14：印字层；21：第一布线基板；22、210：第二布线基板；100、200：半导体装置；211：基材；300：复合片；C1：第一半导体芯片；C2：第二半导体芯片；P1：第一半导体封装体；P2：第二半导体封装体；T：切割胶带；W：半导体晶圆。

Claims (12)

1.一种半导体用保护膜，其具备：
由非导电性无机材料构成的保护层，以及
设置于所述保护层的一个面上的粘合剂层。
2.根据权利要求1所述的半导体用保护膜，其中，
所述非导电性无机材料至少含有玻璃质材料。
3.根据权利要求2所述的半导体用保护膜，其中，
所述保护层由平板玻璃构成。
4.根据权利要求1～3中任一项所述的半导体用保护膜，其中，
所述保护层具有10μm以上300μm以下的厚度。
5.一种半导体装置，其具备：
布线基板；
以倒装芯片方式安装于所述布线基板上的半导体元件；以及
保护膜，该保护膜具有由非导电性无机材料构成的保护层和设置于所述保护层的一个面上的接合于所述半导体元件的背面的粘合剂层。
6.根据权利要求5所述的半导体装置，其中，
所述保护层由平板玻璃构成。
7.根据权利要求6所述的半导体装置，其中，
所述保护膜具有设置于所述保护层的至少一个面上的印字层。
8.根据权利要求7所述的半导体装置，其中，
所述印字层由所述保护层或所述粘合剂层的至少一部分构成。
9.根据权利要求5～8中任一项所述的半导体装置，其中，
所述保护层具有10μm以上300μm以下的厚度。
10.根据权利要求5～9中任一项所述的半导体装置，其进一步具备与所述布线基板电连接的半导体封装体部件，
所述半导体元件配置于所述布线基板与所述半导体封装体部件之间。
11.一种半导体装置，其具备：
第一布线基板；
以倒装芯片方式安装于所述第一布线基板上的第一半导体元件；
第二半导体元件；以及
第二布线基板，其具有由非导电性无机材料构成的基材、设置于所述基材上的将所述第一布线基板与所述第二半导体元件之间电连接的布线层、以及设置于所述基材的一个面上的接合于所述第一半导体元件的背面的粘合剂层，所述第二布线基板配置于所述第一半导体元件与所述第二半导体元件之间。
12.一种复合片，其具备：
在基底层的一个面侧层叠粘着剂层而成的粘着片，以及
层叠于所述粘着片的所述粘着层侧的保护膜，
所述保护膜具有由非导电性无机材料构成的保护层和设置于所述保护层的与所述粘着层侧相反侧的面上的粘合剂层。
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