TWI646616B - 半導體用保護膜、半導體裝置以及複合片 - Google Patents

半導體用保護膜、半導體裝置以及複合片 Download PDF

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Publication number
TWI646616B
TWI646616B TW105117571A TW105117571A TWI646616B TW I646616 B TWI646616 B TW I646616B TW 105117571 A TW105117571 A TW 105117571A TW 105117571 A TW105117571 A TW 105117571A TW I646616 B TWI646616 B TW I646616B
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Taiwan
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layer
semiconductor
protective
protective layer
protective film
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TW105117571A
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English (en)
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TW201707112A (zh
Inventor
岡本直也
池田亮平
堀米克彦
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日商琳得科股份有限公司
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Publication of TW201707112A publication Critical patent/TW201707112A/zh
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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Abstract

本發明提供能夠不減損生產性、可靠性而抑制半導體晶片之翹曲之半導體用保護膜、及具備半導體用保護膜之半導體裝置以及複合片。
本發明之一形態之半導體用保護膜10具備由非導電性無機材料構成之保護層11、及設置於保護層11之一面之接著劑層12。保護層11至少包含玻璃質材料，典型而言由板玻璃構成。由此，能夠有效果地抑制作為保護對象之半導體元件之翹曲。

Description

半導體用保護膜、半導體裝置以及複合片
本發明係關於一種例如貼附於半導體晶片等半導體元件之背面之半導體用保護膜、具備其之半導體裝置以及複合片。
近年來，正廣泛進行使用有被稱作面朝下(face down)方式或倒裝晶片(flip chip)連接之封裝法之半導體裝置之製造。此種封裝法中，構成半導體晶片之電路面之表面(主動面)與配線基板相向地配置，並經由形成於半導體晶片之表面之被稱作凸塊(bump)之複數個電極而電性、機械性地連接於配線基板上。
於以面朝下方式封裝之半導體晶片之背面(非主動面)，為了保護半導體晶片，多數情況下貼附有保護膜。作為此種保護膜，已知有如下之倒裝晶片型半導體背面用膜，即，具備接著劑層、及積層於該接著劑層上之保護層，且上述保護層由耐熱性樹脂或金屬構成(例如參照專利文 獻1)。
另一方面，伴隨近年之電子機器之小型化、高功能化，對搭載於該電子機器之半導體裝置亦要求進一步之小型化、高功能化。因此，於各個方面推進半導體晶片之積體化、高密度化所需之PoP(Package on Package，堆疊封裝)等多晶片模組技術之開發。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2012-33626號公報。
為了實現半導體裝置之小型化、薄型化，而需要內置之半導體晶片之更薄型化。然而，半導體晶片越薄，半導體晶片之剛性越低，其結果，存在由熱應力引起之半導體裝置之翹曲更為顯著之傾向。
因此，專利文獻1中提出如下：對貼附於半導體晶片之背面之保護膜之接著劑層而言，藉由將熱硬化性樹脂相對於全部樹脂成分之含量設為規定以下，而抑制封裝體之翹曲(專利文獻1之段落〔0034〕)。然而，由合成樹脂構成之接著劑層之剛性或彈性率相對較低，因此，無法充分 抑制半導體晶片之翹曲。
另一方面，由金屬構成之保護層可確保相對較高之彈性率。然而，若使用保護層由金屬構成之保護膜，則會於生產性及可靠性方面產生如下各種問題：切晶加工時之加工精度之下降，晶圓切割機(刀片)之磨損、切屑之附著引起之半導體晶片電路面之短路不良等。進而，於利用雷射等在接著劑層表面進行印刷之情形時，無法確保可辨識性。
鑒於以上情況，本發明之目的在於提供一種能夠不損及生產性、可靠性而抑制半導體晶片之翹曲進而確保可辨識性之半導體用保護膜、具備其之半導體裝置以及複合片。
為了達成上述目的，本發明之一形態之半導體用保護膜具備保護層及接著劑層。
上述保護層由非導電性無機材料構成。
上述接著劑層設置於上述保護層之一面。
上述半導體用保護膜中因保護層由非導電性無機材料構成，故與保護層由合成樹脂構成之情形相比，可提高保護層之彈性率。由此，能夠有效果地抑制作為保護對象 之半導體元件之翹曲。
而且，因保護層由非導電性無機材料構成，故與保護層由金屬構成之情形相比，可提高切晶加工時之加工精度，且可抑制晶圓切割機之磨損或劣化。而且，即便切屑附著於半導體晶片之電路面亦不會產生短路不良。由此，實現了生產性及可靠性之提高。
構成保護層之非導電性無機材料不作特別限定，典型而言，可列舉玻璃質材料、陶瓷材料或者該些之混合物等。作為玻璃質材料，典型而言，可列舉板玻璃、玻璃纖維等。另外，板玻璃或玻璃纖維中使用之玻璃之結構可為非晶質，亦可為結晶質。
進而，藉由於非導電性無機材料中使用玻璃等具有透光性之材料，而即便於在接著劑層表面利用雷射等進行印刷之情形時，亦可確保可辨識性。
於保護層由板玻璃構成之情形時，其厚度例如可設為10μm以上且300μm以下。藉由使用此種厚度之板玻璃，可有助於半導體裝置之薄型化，並且因保護層之可撓性提高故操作變得容易。
本發明之一形態之半導體裝置具備配線基板、半導體元件及保護膜。
上述半導體元件以倒裝晶片的方式封裝於上述配線 基板。
上述保護膜具有由非導電性無機材料構成之保護層、及設置於上述保護層之一面之接著劑層，上述接著劑層接合於上述半導體元件之背面。
根據上述半導體裝置，因於半導體元件之背面設置有上述保護膜，故可獲得抑制了半導體元件之翹曲且連接可靠性高之半導體裝置。
亦可於保護層之至少一面設置印刷層。印刷層典型而言，包含文字、符號、圖形等，可識別地顯示半導體元件或半導體裝置之種類等。印刷層典型而言，由保護層或接著劑層至少一部分所構成，例如，形成於接著劑層之與保護層之接著側表面。印刷層例如可藉由利用雷射加工法等將保護層之表面削去而形成，亦可藉由利用雷射光之照射使接著劑層表面改質而形成。尤其於保護層由板玻璃、透明陶瓷等具有透光性之材料構成之情形時，因保護層被賦予透光性，故可藉由雷射印刷等容易地自保護層之上形成印刷層。上述保護膜亦可另外具有印刷層。即，印刷層亦可由與保護層及接著劑層不同之層所構成。
上述半導體裝置亦可進而具備電性連接於上述配線基板之半導體封裝體零件。該情形時，上述半導體元件配置於上述配線基板與上述半導體封裝體零件之間。
藉此，可獲得抑制了翹曲之PoP結構等之半導體裝置。
本發明之其他形態之半導體裝置具備第1配線基板、第1半導體元件、第2半導體元件及第2配線基板。
上述第1半導體元件以倒裝晶片的方式封裝於上述第1配線基板。
上述第2配線基板配置於上述第1半導體元件與上述第2半導體元件之間。上述第2配線基板具有保護層、配線層及接著劑層。上述保護層由非導電性無機材料構成。上述配線層設置於上述保護層，且將上述第1配線基板與上述第2半導體元件之間電性連接。上述接著劑層設置於上述保護層之一面，且接合於上述第1半導體元件之背面。
上述半導體裝置中，第2配線基板具有由非導電性無機材料構成之保護層，且經由接著劑層而接合於第1半導體元件之背面。由此，可獲得抑制了第1半導體晶片之翹曲且連接可靠性高之半導體裝置。
進而，本發明之一形態之複合片具備於基底層之一面側積層有黏著劑層而成之黏著片、及積層於上述黏著片之上述黏著層側之保護膜。
上述保護膜具有由非導電性無機材料構成之保護層、及設置於上述保護層之與上述黏著層側為相反側之面 之接著劑層。
根據本發明，可不損及生產性、可靠性而抑制半導體晶片之翹曲。
10、10F‧‧‧保護膜
11‧‧‧保護層
12、212‧‧‧接著劑層
13‧‧‧剝離片
14‧‧‧印刷層
21‧‧‧第1配線基板
22、210‧‧‧第2配線基板
31‧‧‧外部連接端子
32‧‧‧凸塊
41‧‧‧凸塊(突起電極)
42‧‧‧接合線
51‧‧‧底部填充樹脂層
52‧‧‧密封層
70‧‧‧黏著片
71‧‧‧基底層
72‧‧‧黏著劑層
100、200‧‧‧半導體裝置
110‧‧‧控制基板
211‧‧‧基材
300‧‧‧複合片
C1‧‧‧第1半導體晶片
C2‧‧‧第2半導體晶片
C21、C22‧‧‧第2半導體晶片
D‧‧‧切片機
F‧‧‧環形框架
K‧‧‧夾盤
M‧‧‧貼片機
P1‧‧‧第1半導體封裝體
P2‧‧‧第2半導體封裝體
T‧‧‧切割膠帶
V1、V2‧‧‧通孔
W‧‧‧半導體晶圓
X、Y、Z‧‧‧軸
圖1係表示本發明之第1實施形態之半導體裝置之構成之概略側剖視圖。
圖2係圖1之主要部位之放大圖。
圖3係表示本發明之一實施形態之保護膜之概略側剖視圖。
圖4係將不具備保護膜之半導體封裝體之翹曲之情況稍微誇張表示之示意圖。
圖5係表示貼附有具有印刷層之保護膜之半導體裝置之構成例之概略側剖視圖。
圖6係說明上述半導體裝置中之第1半導體封裝體之製造方法之概略步驟剖視圖。
圖7係表示分別貼附有構成不同之保護膜之半導體晶片之共平面性之評估結果之圖。
圖8係表示本發明之第2實施形態之半導體裝置之構成之概略側剖視圖。
圖9係表示本發明之第3實施形態之複合片之構成之概略剖視圖。
以下，一面參照圖式一面對本發明之實施形態進行說明。
<第1實施形態>
圖1係表示本發明之一實施形態之半導體裝置100之構成之概略側剖視圖，圖2係圖1之主要部位(第1半導體封裝體P1)之放大圖。
各圖中，X軸、Y軸及Z軸表示相互正交之3軸方向，Z軸方向相當於半導體裝置100之高度方向(厚度方向)。
〔半導體裝置〕
如圖1所示，本實施形態之半導體裝置100具有第1半導體封裝體P1與第2半導體封裝體P2之積層結構(亦即PoP)。
第1半導體封裝體P1具有第1配線基板21、及以倒裝晶片的方式封裝(倒裝晶片連接)於第1配線基板21之上之第1半導體晶片C1。
第2半導體封裝體P2搭載於第1半導體封裝體P1之上。第2半導體封裝體P2具有第2配線基板22、及打線接合(wire bond)連接於第2配線基板22之上之第2半 導體晶片C2。第2半導體晶片C2具有大小不同之2個半導體晶片C21、C22之積層結構。
第1半導體晶片C1、第2半導體晶片C2(C21、C22)典型而言，由單晶矽(Si)基板構成，於其表面形成有電晶體、記憶體等複數個電路元件積體化而成之電路面。
第1半導體晶片C1係以面朝下之方式將其電路面朝向第1配線基板21，並安裝於第1配線基板21之上表面。第1半導體晶片C1經由形成於其電路面(圖中下表面)之複數個凸塊(突起電極)41而電性機械性地連接於第1配線基板21。第1半導體晶片C1對第1配線基板21之接合中例如採用使用了回焊爐(reflow furnace)之回流焊接法(reflow soldering method)。
於第1半導體晶片C1與第1配線基板21之間，典型而言設置有底部填充樹脂層51。底部填充樹脂層51係以如下目的而設置，即，將第1半導體晶片C1之電路面及凸塊41密封而阻斷外部空氣，進而，提高第1半導體晶片C1與第1配線基板21之間之接合強度而確保凸塊41之連接可靠性。
於第1半導體晶片C1之背面(與電路面為相反側之面，圖中上表面)，貼附有用以保護該半導體晶片C1之 半導體用保護膜(以下稱作保護膜)10。保護膜10如後述般，具有抑制第1半導體晶片C1及第1半導體封裝體P1之翹曲之功能。
另一方面，第2半導體晶片C2(C21、C22)以面朝上之方式將各自之與電路面相反側之背面朝向第2配線基板22安裝於第2配線基板22之上表面。第2半導體晶片C2(C21、C22)具有分別排列於該些之電路面(圖中上表面)之周圍之複數個電極墊(圖示省略)，經由連接於各電極墊之複數個接合線42而電性連接於第2配線基板22。該情形時，第2配線基板22與半導體晶片C21、及兩個半導體晶片C21、C22藉由非導電性之接著劑等而分別相互接合。
第2配線基板22之上表面設置有將第2半導體晶片C2(C21、C22)及接合線42密封之密封層52。密封層52與底部填充樹脂層51同樣地以如下目的而設置：對第2半導體晶片C2(C21、C22)之電路面阻斷外部空氣，提高第2半導體晶片C2(C21、C22)與第2配線基板22之連接可靠性。
第1配線基板21及第2配線基板22可分別由相同種類之材料構成，亦可由不同種類之材料構成。第1配線基板21及第2配線基板22典型而言，由玻璃環氧基板、聚 醯亞胺基板等有機系配線基板構成，但不限於此，亦可使用陶瓷基板或金屬基板。配線基板之種類不作特別限定，可應用單面基板、兩面基板、多層基板、元件內置基板等各種基板。本實施形態中，第1配線基板21及第2配線基板22由分別具有通孔V1、V2之玻璃環氧系多層配線基板構成。
於第1配線基板21之背面(圖中下表面)，設置有與被稱作母板(mother board)等之控制基板110連接之複數個外部連接端子31。即，第1配線基板21作為介裝於第1半導體晶片C1與控制基板110之間之插入式基板(子基板)而構成，亦具有作為再配線層之功能，即，將第1半導體晶片C1之電路面上之凸塊51之配置間隔轉換為控制基板110之焊盤間距。
於第2配線基板22之背面(圖中下表面)，設置有與第1配線基板21之表面連接之複數個凸塊32。即，第2配線基板22作為將第2半導體晶片C2(C21、C22)連接於第1配線基板之插入式基板而構成，經由第1配線基板21及外部連接端子31而電性連接於控制基板110。
外部連接端子31及凸塊41、32典型而言，由焊料凸塊(solder bump)(球形凸塊(ball bump))構成，但不限於此，亦可由鍍敷凸塊(plated bump)或柱形凸塊(stud bump) 等其他突起電極構成。第2配線基板22對第1配線基板21之連接、及半導體裝置100對控制基板110之連接中採用回流焊接法。
此處，回焊封裝時之半導體晶片或半導體裝置之翹曲變形成為電子機器之故障或封裝不良、可靠性降低之原因，因而成為重要之課題之一。例如於圖1所示之PoP結構之半導體裝置100之情形時，第1半導體封裝體P1及第2半導體封裝體P2為單面密封結構，因而容易發生翹曲。尤其，因位於下段側之第1半導體封裝體P1較位於上段側之第2半導體封裝體P2薄，且因密封區域為局部等，故相較於第2半導體封裝體P2，第1半導體封裝體P1中更容易發生翹曲。而且，若回流焊接時第1半導體封裝體P1大幅翹曲，則存在第2半導體封裝體P2之凸塊32離開第1配線基板21而產生連接不良之情況。
為了解決此種問題，本實施形態之半導體裝置100使貼附於第1半導體晶片C1之背面之保護膜10具有抑制第1半導體封裝體P1之翹曲之功能。以下，對保護膜10之詳情進行說明。
〔保護膜之構成〕
圖3係表示本發明之一實施形態之保護膜10之概略側剖視圖。
保護膜10設置於第1半導體晶片C1之背面。保護膜10構成為藉由設置於第1半導體晶片C1之背面，而發揮第1半導體晶片C1之剛性之提高、第1半導體晶片C1之背面之保護、第1半導體晶片C1之品種之顯示、第1半導體封裝體P1之翹曲抑制等各種功能。保護膜10典型而言，如後述般，於背面研磨(背面研削)步驟後、切晶加工前，貼附於半導體晶圓之背面。
如圖2所示，本實施形態之保護膜10具有保護層11與接著劑層12之積層結構。保護膜10如圖2所示，經由接著劑層12而貼附於第1半導體晶片C1之背面
另外，保護膜10藉由將貼附於第1半導體晶片C1之製造中使用之半導體晶圓之背面的晶圓尺寸之保護膜10F(參照圖6(A))以晶片級切下而形成。另外，本發明之保護膜當然亦能夠作為圖1所示之半導體裝置以外之半導體晶片用保護膜而使用。
(保護層)
保護層11由作為保護膜10之基材而構成。保護層11由非導電性無機材料構成。關於非導電性無機材料，只要為適合於工件之加工，例如半導體晶圓之切晶者，則不作特別限定，典型而言可列舉玻璃質材料、陶瓷材料或者該些之混合物等。
作為玻璃質材料，典型而言可列舉板玻璃、玻璃纖維等。板玻璃或玻璃纖維中使用之玻璃之結構可為非晶質亦可為結晶質。玻璃之種類不作特別限定，典型而言，可列舉鈉鈣玻璃、鉛玻璃、硼矽酸玻璃、石英玻璃等。就板玻璃而言，例如較佳為顯示器用之薄板玻璃，尤佳為能夠捲繞成卷狀之具有可撓性之超薄板玻璃。作為玻璃纖維，例如能夠應用作為玻璃纖維紙(玻璃紙)或電池用材料(隔離膜)而構成之玻璃纖維。
本實施形態之保護膜10因保護層11由非導電性無機材料構成，故與保護層11由合成樹脂構成之情形相比，可提高保護層11之彈性率。
保護層11之彈性率典型而言，只要為可抑制回焊封裝時之第1半導體封裝體P1之翹曲者，則不作特別限定。第1半導體封裝體P1之翹曲主要由第1半導體晶片C1之線膨脹係數與第1配線基板21之線膨脹係數之不匹配而引起，兩者之線膨脹係數之差異越大，則會誘發越大之翹曲。翹曲之方向雖相應於材料之種類或特性等而不同，但具有加熱時與冷卻時彼此為相反方向之傾向。圖4係將不具備保護膜之半導體封裝體之翹曲之情況稍微誇張表示之示意圖，分別以(A)表示常溫時之狀態，而(B)表示高溫時之狀態。因此，保護層11之彈性率較佳為可 抑制第1半導體封裝體P1之兩方向上之翹曲。
本實施形態中，如上述般，第1半導體晶片C1由矽基板構成，第1配線基板21由玻璃環氧系有機材料構成。第1半導體晶片C1之線膨脹係數(~10-6/℃)與第1配線基板21之線膨脹係數(~10-5/℃)相差1位數，第1配線基板21之熱膨脹(熱收縮)大於第1半導體晶片C1。保護層11之線膨脹係數可將第1配線基板21之線膨脹係數設定為基準，亦可將第1半導體晶片C1之線膨脹係數設定為基準。
例如，藉由使保護層11之線膨脹係數與第1配線基板21之線膨脹係數一致，或藉由小於第1配線基板21之線膨脹係數，而能夠抑制夾持於第1配線基板21與保護膜10之間之第1半導體晶片C1之變形。而且，藉由使保護層11之線膨脹係數與第1半導體晶片C1之線膨脹係數一致，或藉由小於第1半導體晶片C1之線膨脹係數，而能夠提高第1半導體晶片C1之剛性從而抑制由上述熱應力引起之第1半導體晶片C1之變形。進而，保護層11之線膨脹係數亦可設定為第1配線基板21之線膨脹係數與第1半導體晶片C1之線膨脹係數之間之適當值。
藉由如以上般設定保護層11之線膨脹係數，而能夠有效果地抑制第1半導體封裝體P1之翹曲。構成保護層 11之非導電性無機材料，可選自能夠獲得目標線膨脹係數之材料即可。而且，為了獲得目標線膨脹係數，亦可組合複數種非導電性無機材料。
本實施形態中，保護層11由玻璃質材料構成，更具體而言，由板玻璃構成。藉由使保護層11由板玻璃構成，而保護膜10之操作性提高並且實現生產性之提高。板玻璃中可使用所謂的強化玻璃材料，亦可使用通常之玻璃材。板玻璃中可使用剛性玻璃片，亦可使用具有可撓性之玻璃膜。雖然板玻璃中使用具有透光性之材料，但亦可使用已著色之材料。
保護層11之線膨脹係數可根據構成保護層11之板玻璃之成分、加工方法等而選擇或調整。構成保護層11之板玻璃典型而言，可選自線膨脹係數為10-5至10-7/℃級別者。
構成保護層11之玻璃質材料之軟化點(Glass transition Temperature；Tg)較佳為高於回焊溫度之溫度(例如260℃以上)。由此，能夠抑制回焊封裝時之保護層11之軟化、變形，且能夠維持半導體晶片C1之翹曲抑制效果。
而且，保護層11之厚度能夠根據第1半導體晶片C1 之尺寸(厚度、大小)、第1半導體封裝體P1之尺寸(厚度、大小)、第1半導體封裝體P1與第2半導體封裝體P2之間的間隙等而適當設定。本實施形態中，作為保護層11，使用厚度例如為10μm以上且300μm以下、較佳為50μm以上且200μm以下之具有可撓性之板玻璃。由此，可確保第1半導體封裝體P1之薄型化，且有效果地防止第1半導體封裝體P1之翹曲變形。
而且，因保護層11具有可撓性，而能夠將保護膜10捲繞成卷狀，從而提高處理性、保存性、輸送性等。而且，因具有可撓性之玻璃膜自輥退繞時捲曲等變形少，故具有操作性優異之優點。
此種板玻璃可使用市售之材料，亦可根據用途而使用最佳化之材料。作為市售之材料，例如可使用日本電氣硝子(Nippon Electric Glass)股份有限公司製造之無鹼超薄板玻璃「G-Leaf」(註冊商標)等。
(接著劑層)
接著劑層12設置於保護層11之一面。接著劑層12典型而言，由熱硬化性成分及能量線硬化性成分中之至少1種與黏合劑聚合物(binder polymer)成分構成。
作為熱硬化性成分，例如可列舉環氧樹脂、酚樹脂、 三聚氰胺樹脂、脲樹脂、聚酯樹脂、胺基甲酸酯樹脂、丙烯酸系樹脂、聚醯亞胺樹脂、苯并(benzoxazine)樹脂等、以及該些之混合物。尤其本實施形態中，較佳為使用環氧樹脂、酚樹脂以及該些之混合物。
在本實施形態中，較佳地亦可使用該些之中的雙酚系縮水甘油酯型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂及苯酚酚醛清漆型環氧樹脂。該些環氧樹脂可單獨使用1種，或組合2種以上而使用。
能量線硬化性成分由若受到紫外線、電子束等能量線之照射則聚合硬化之化合物而構成。該化合物於分子內具有至少一個聚合性雙鍵，通常分子量為100~30000，較佳為300~10000左右。作為此種能量線聚合型化合物，例如可使用三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯或者1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、寡聚酯丙烯酸酯，進而聚酯型或聚醚型之丙烯酸胺基甲酸酯寡聚物或聚酯丙烯酸酯、聚醚丙烯酸酯、環氧改質丙烯酸酯等。
在本實施形態中，較佳地亦可使用該些之中的紫外線硬化型樹脂，具體而言，尤佳為使用寡聚酯丙烯酸酯、丙 烯酸胺基甲酸酯寡聚物等。藉由於能量線硬化性成分中混入光聚合起始劑，而可減少聚合硬化時間以及光線照射量。
黏合劑聚合物成分係為了對保護層11賦予適度之黏性(tackiness)以提高片材之操作性而使用。黏合劑聚合物之重量平均分子量通常為5萬~200萬、較佳為10萬~150萬、尤佳為20萬~100萬之範圍。若分子量過低則片材形成不充分，若過高則與其他成分之相溶性變差，結果妨礙均勻之片材形成。
作為此種黏合劑聚合物，較佳為例如使用丙烯酸系聚合物、聚酯樹脂、胺基甲酸酯樹脂、聚矽氧樹脂、橡膠系聚合物等，尤佳為使用丙烯酸系聚合物。
作為丙烯酸系聚合物，例如可列舉由自(甲基)丙烯酸酯單體及(甲基)丙烯酸衍生物所衍生之結構單元構成之(甲基)丙烯酸酯共聚物。此處，作為(甲基)丙烯酸酯單體，較佳為烷基之碳數為1~18之(甲基)丙烯酸烷基酯，例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯等。而且，作為(甲基)丙烯酸衍生物，例如可列舉(甲基)丙烯酸、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸羥乙酯等。
將甲基丙烯酸縮水甘油酯等共聚而於丙烯酸系聚合物中導入縮水甘油基，藉此與作為熱硬化型接著成分之環氧樹脂之相溶性提高，且硬化後之Tg增高而耐熱性亦提高。而且，利用丙烯酸羥乙酯等於丙烯酸系聚合物中導入羥基，由此對晶片之密接性或黏著物性之控制變得容易。
而且，接著劑層12可著色。接著劑層12之著色例如藉由添加顏料、染料等而進行。若將接著劑層12著色，則實現外觀之提升，並且實施雷射印刷時可提高其可辨識性、識別性。接著劑層12之顏色不作特別限定，可無色彩，亦可有色彩。本實施形態中，接著劑層12被著色成黑色。
進而，亦可以提高硬化後之保護膜10與晶片背面之接著性、密接性為目的，而在接著劑層12添加耦合劑。耦合劑可不損及保護膜10之耐熱性而提高接著性、密接性，進而耐水性(耐濕熱性)亦提高。
此種接著劑層12可使用市售之材料，亦可根據用途而使用最佳化之材料。作為市售之材料，例如較佳地使用琳得科(LINTEC)股份有限公司製造之晶片背面保護帶「LC帶」系列(例如LC2841、LC2824H、LC2826H、LC2850)。
(剝離片)
如圖3所示，本實施形態之保護膜10進而具備剝離片13。剝離片13以被覆接著劑層12之方式設置，於保護膜10使用時自接著劑層12剝離。
作為剝離片13，例如可使用聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、聚氯乙烯膜、氯乙烯共聚物膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚對苯二甲酸丁二酯膜、聚胺基甲酸酯膜、乙烯-乙酸乙烯酯膜、離子聚合物樹脂膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜、聚苯乙烯膜、聚碳酸酯膜、聚醯亞胺膜、氟樹脂膜等。而且亦可使用該些之交聯膜。進而亦可為該些之積層膜。
進而理想為剝離片13之表面張力較佳為40mN/m以下，進而較佳為37mN/m以下，尤佳為35mN/m以下。此種表面張力低之剝離片13係適當地選擇材質而獲得，且亦可藉由對剝離片13之表面塗佈聚矽氧樹脂等實施脫模處理而獲得。
剝離片13之厚度通常為5μm~300μm，較佳為10μm~200μm，尤佳為20μm~150μm左右。
此種剝離片13可使用市售之材料，亦可根據用途而 使用最佳化之材料。作為市售之材料，例如可較佳地使用琳得科股份有限公司製造之剝離膜「D-645H」等。
(印刷層)
亦可於保護層11之至少一面設置印刷層。印刷層典型而言，包含文字、符號、圖形等，可識別地顯示半導體元件或半導體裝置之種類等。印刷層典型而言，由保護層11或接著劑層12之至少一部分所構成，例如，形成於接著劑層之與保護層之接著側表面。印刷層例如可藉由利用雷射加工法等將保護層11之表面削去而形成，亦可藉由利用雷射光之照射使接著劑層12表面改質而形成。尤其於保護層11由板玻璃、透明陶瓷等具有透光性之材料構成之情形時，因保護層11被賦予透光性，故可藉由雷射印刷等容易地自保護層之上形成接著劑層12表面之印刷層。保護膜10亦可另外具有印刷層。即，印刷層亦可由與保護層11及接著劑層12不同之層所構成。
圖5(A)~(C)係貼附有具有印刷層之保護膜10之半導體裝置之構成例之概略側剖視圖。
圖5(A)表示於保護層11之下表面(接著劑層12)設置印刷層14之例。該情形時，印刷層14由接著劑層12之至少一部分所構成，可藉由自保護層11之上對接著劑層12照射紅外線雷射(雷射標記)而形成。保護層11 由具有透光性之玻璃質材料構成，因而可經由保護層11而容易地使紅外線雷射到達接著劑層12。該例中，印刷層14形成於保護層11與接著劑層12之界面(接著劑層12之與保護層11之接著側表面)，包含能夠經由保護層11識別之文字、符號或圖形。印刷層14典型而言，顯示半導體晶片或半導體裝置之種類等。
圖5(B)表示於保護層11之上表面設置有印刷層14之例。本例中，印刷層14可由與接著劑層12相同之材料構成，亦可由與接著劑層12不同之材料構成。而且本例中，印刷層14因設置於保護層11之上表面，故保護層11亦可為不透過紅外線者。圖5(A)、圖5(B)中，對印刷層14之雷射標記可於接著劑層12之硬化前進行，亦可於接著劑層12之硬化後進行。
圖5(C)表示於保護層11之至少一部分設置有印刷層14之例。於保護層11由玻璃質材料等具有透光性之非導電性無機材料構成之情形時，能夠進行雷射加工或使用了微型刀之表面加工。具體而言，例如，亦可使用能夠加工保護層11(玻璃質材料能夠吸收之)雷射光，於保護層11之表面寫入印刷資訊。如此形成之印刷層14藉由自正面或者斜向辨識保護層11，而可使印刷資訊浮升於保護層11之表面。
〔半導體裝置之製造方法〕
繼而，對具備保護膜10之半導體裝置，尤其第1半導體封裝體P1之製造方法進行說明。
圖6(A)~圖6(E)係說明第1半導體封裝體P1之製造方法之概略步驟剖視圖。
首先，如圖6(A)所示，於藉由背面研磨步驟薄化至規定厚度(例如50μm)之半導體晶圓W之背面(圖中上表面)，貼附有保護膜10F。保護膜10F例如形成為與半導體晶圓W大致同等之大小、形狀，經由接著劑層12而貼附於半導體晶圓W之背面。保護膜10之剝離片13(參照圖3)於對半導體晶圓W貼附前，自接著劑層12剝離。接著劑層12之後藉由加熱處理或能量線照射處理而硬化。
藉由於半導體晶圓W貼附有保護膜10F，而半導體晶圓W之表觀厚度增加，其結果，提高半導體晶圓W之剛性，並且操作性或切晶適應性提高。由此，半導體晶圓W有效果地得到保護而不會發生損傷或裂紋等。
其次，於保護膜10F形成有顯示製品資訊之印刷層14(圖5(A))。印刷層14藉由經由保護層11對接著劑層12照射紅外線雷射而形成(雷射標記)。藉由以晶圓級進 行印刷層14之形成，而可效率佳地對各個晶片區域印刷規定之製品資訊。
繼而，如圖6(B)所示，接著有保護膜10F之半導體晶圓W安裝於切割膠帶T之黏著面。切割膠帶T設置於上述一面而將黏著層向上地配置於未圖示之切晶平台上，藉由環形框架F而固定。半導體晶圓W將其電路面向上並經由保護膜10F而固定於切割膠帶T上。
而且，如圖6(C)所示，藉由切片機D，將半導體晶圓W針對每個電路(以晶片為單位)切晶。此時，切片機D之刀片以達到切割膠帶T之上表面(黏著面)之深度切斷半導體晶圓W，由此保護膜10F隨半導體晶圓W一併被切斷為晶片單位，而形成與各半導體晶片C1對應之保護膜10。
繼而，如圖6(D)所示，藉由夾盤K，半導體晶片C1隨保護膜10一併自切割膠帶T之黏著層剝離。然後，使焊劑附著於半導體晶片C1之電路面(凸塊)，而如圖6(E)所示，使用貼片機M將半導體晶片(第1半導體晶片)C1以倒裝晶片的方式封裝於配線基板(第1配線基板)21上。
根據本實施形態，因將保護膜10接著於半導體晶片 C1之背面，故半導體晶片C1之表觀剛性提高，由此切晶適應性提高，並且防止因自切割膠帶拾取之步驟或向配線基板上安裝之步驟等中發揮作用之應力而出現晶片裂紋。
而且，因保護層11由玻璃質材料(非導電性無機材料)構成，故與保護層11由金屬構成之情形相比，可提高切晶加工時之加工精度，且抑制晶圓切割機(刀片)之磨損或劣化。而且，即便切屑附著於半導體晶片C1之電路面亦不會產生短路不良。由此，實現生產性及可靠性之提高。
進而根據本實施形態，因保護層11由玻璃質材料構成，故可抑制半導體晶片C1對配線基板21之回焊封裝步驟中之半導體晶片C1之翹曲。
圖7(A)、圖7(B)中表示分別貼附有構成不同之2個保護膜之半導體晶片之共平面性(Coplanarity)之評估結果。評估中使用之矽半導體晶片之厚度為50μm，大小為10mm×10mm，對回焊封裝於玻璃環氧系配線基板後之晶片之上表面(保護膜之上表面)之翹曲量進行了評估。
作為回焊條件，進行3次預備加熱溫度130℃、加熱溫度(最高溫度)260℃、加熱時間(加熱溫度下之保持時間)1分鐘之IR(Infra-Red；紅外線)回焊。回焊爐中 使用相模理工公司製造之「WL-15-20DNX型」。而且，共平面性(Coplanarity)之評估裝置中使用Akrometrix公司製造之「TherMoiré PS200e」。
而且，於圖7(A)所示之樣品中，使用厚度25μm之琳得科股份有限公司製造之保護帶「LC2850」(以下稱作保護帶)作為保護膜，於圖7(B)所示之樣品中，使用上述保護帶與厚度100μm之玻璃膜(日本電氣硝子股份有限公司製造之超薄板玻璃「G-Leaf」(註冊商標))之積層體(相當於本實施形態之保護膜10)作為保護膜。
評估之結果為，圖7(A)所示之樣品中，晶片之翹曲為214μm，與此相對，圖7(B)所示之樣品中，晶片之翹曲為56μm。而且，雖未圖示，將上述玻璃膜之厚度設為50μm時之晶片之翹曲量為111μm。
另外，作為參考例，代替上述玻璃膜，積層厚度30μm之鋁膜時之晶片之翹曲量為106μm，積層厚度40μm之鋁膜時之晶片之翹曲量為69μm。
如以上，根據本實施形態，因可抑制第1半導體晶片C1之翹曲，故可穩定地製造翹曲少之第1半導體封裝體P1。因此，於第2半導體封裝體P2對第1半導體封裝體P1上之封裝、半導體裝置100對控制基板110之封裝時， 亦可抑制第1半導體封裝體P1或半導體裝置100之翹曲，因而可防止翹曲變形引起之各端子部之連接可靠性之降低。
<第2實施形態>
圖8係表示本發明之其他實施形態之半導體裝置200之構成之概略側剖視圖。以下，主要對與第1實施形態不同之構成進行說明，對與上述實施形態相同之構成附上相同之符號並省略或簡化該說明。
本實施形態之半導體裝置200於與第1實施形態同樣地具有PoP結構之方面相同，第2半導體封裝體P2之第2配線基板210之基材211由玻璃質材料構成，並且作為第1半導體晶片C1之保護層構成，就該方面而言與第1實施形態不同。
本實施形態中，第2配線基板210具有基材211、配線層(通孔V2)及接著劑層212。基材211由玻璃質材料構成。上述配線層具有設置於基材211之上表面及下表面之配線圖案、及設置於基材211之內部之層間連接部(通孔V2)，將第1配線基板21與第2半導體晶片C2(C21、C22)之間電性連接。接著劑層212設置於基材211之下表面，且接合於第1半導體晶片C1之背面(圖中上表面)。
基材211之厚度只要為可確保作為配線基板所要求之規定之剛性之大小則不作特別限定，例如，使用50μm以上且300μm以下之基材。基材211之形態不作特別限定，可構成為自支持性(自立性)高之剛性片狀，亦可構成為具有可撓性之膜狀。構成基材211之玻璃質材料典型而言，使用板玻璃，除此以外，亦可使用玻璃纖維之積層體、玻璃粉末之燒結體等。
另外，基材211亦可由玻璃質材料以外之其他非導電性無機材料，例如陶瓷板等構成。
接著劑層212與第1實施形態(接著劑層12)之構成相同。接著劑層212將基材211與第1半導體晶片C1相互密接，發揮作為對第1半導體晶片C1之背面阻斷外部空氣之密封層的功能。
圖示之接著劑層212僅設置於與第1半導體晶片C1之背面相向之區域，但不限於此，亦可於基材211之整個下表面設置有接著劑層212。該情形時，可於接著劑層212中設置有凸塊32之位置形成開口部，接著劑層212自身亦可由導電性接著層或ACF(anisotropic conductive film，非等向性導電膜)/ACP(anisotropic conductive paste，非等向性導電膏)之非等向性導電材料構成。
如以上構成之本實施形態之半導體裝置200中，第2配線基板210具有由玻璃質材料構成之基材211，經由接著劑層212而接合於第1半導體晶片C1之背面。由此，例如於對控制基板110之回焊封裝時，可有效果地抑制第1半導體晶片C1之翹曲，因而可防止半導體裝置200之翹曲變形，且可提高各端子部之連接可靠性。
而且，根據本實施形態，第2配線基板210之接著劑層212接合於第1半導體晶片C1之背面，因而第1半導體封裝體P1與第2半導體封裝體P2之接合更為牢固，能夠提高凸塊32中之連接可靠性。而且，第2配線基板210與第1半導體晶片C1之間隔為零，因而亦有助於半導體裝置200之薄型化。
<第3實施形態>
圖9係表示本發明之其他實施形態之複合片300之構成之概略側剖視圖。以下，主要對與第1實施形態不同之構成進行說明，對與上述實施形態相同之構成附上相同之符號並省略或簡化其說明。
如圖9所示，本實施形態之複合片300具備將黏著劑層72積層於基底層71之一面而成之黏著片70、及積層於黏著片70之黏著劑層72側之保護膜10而構成。
保護膜10與第1實施形態之構成相同，具有由非導電性無機材料構成之保護層11、及設置於保護層11之與黏著劑層72側為相反側之面之接著劑層12。
關於複合片300，於對工件進行加工時係用於貼附於該工件而保持該工件，並且於該工件或對該工件進行加工而獲得之加工物形成保護膜。該保護膜由保護膜10，較佳為由接著劑層12硬化而成之保護膜10構成。
複合片300作為一例，用於在作為工件之半導體晶圓之切晶加工時保持半導體晶圓，並且於藉由切晶而獲得之半導體晶片形成保護膜，但不限定於此。該情形時之複合片300之黏著片70通常被稱作切晶片。
黏著片70之基底層71只要適合於工件之加工，例如半導體晶圓之切晶及延展，則其構成材料不作特別限定，通常由以樹脂系材料為主材之膜(以下稱作「樹脂膜」)構成。
作為樹脂膜之具體例，可列舉低密度聚乙烯(Low Density Polyethylene；LDPE)膜、直鏈低密度聚乙烯(Linear Low Density Polyethylene；LLDPE)膜、高密度聚乙烯(High Density Polyethylene；HDPE)膜等聚乙烯膜；聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯 膜、乙烯-降莰烯共聚物膜、降莰烯樹脂膜等聚烯烴系膜；乙烯-乙酸乙烯酯共聚物膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜等乙烯系共聚膜；聚氯乙烯膜、氯乙烯共聚物膜等聚氯乙烯系膜；聚對苯二甲酸乙二酯膜、聚對苯二甲酸丁二酯膜等聚酯系膜；聚胺基甲酸酯膜；聚醯亞胺膜；聚苯乙烯膜；聚碳酸酯膜；氟樹脂膜等。而且亦使用如該些之交聯膜、離子聚合物膜般之改質膜。基底層71可為由該些中之1種構成之膜，進而亦可為將該些組合2種以上之積層膜。另外，本說明書中之「(甲基)丙烯酸」係指丙烯酸及甲基丙烯酸之兩者。關於其他類似用語亦相同。
上述之中，自環境安全性、成本等觀點考慮，較佳為聚烯烴系膜，其中較佳為耐熱性優異之聚丙烯膜。若為聚丙烯膜，則可不損及黏著片70之延伸適應性或晶片之拾取適應性，而對基底層71賦予耐熱性。基底層71因具有該耐熱性，而於貼附有工件之狀態下使保護膜10熱硬化之情形時，亦可抑制黏著片70之鬆弛之發生。
上述樹脂膜以提高與積層於其表面之黏著劑層72之密接性為目的，而根據所需對單面或兩面實施利用氧化法或凹凸化法等之表面處理或者底塗處理。作為上述氧化法，例如可列舉電暈放電處理、電漿放電處理、鉻氧化處理(濕式)、火焰處理、熱風處理、臭氧、紫外線照射處 理等，而且，作為凹凸化法，例如可列舉噴砂法、噴塗處理法等。
基底層71之厚度只要可於使用複合片300之各步驟中適當地發揮功能，則不作特別限定。較佳為20μm~450μm之範圍，更佳為25μm~400μm之範圍，尤佳為50μm~350μm之範圍。
黏著劑層72亦可由非能量線硬化性黏著劑構成，亦可由能量線硬化性黏著劑構成。作為非能量線硬化性黏著劑，較佳為具有所需之黏著力及再剝離性者，例如可使用丙烯酸系黏著劑、橡膠系黏著劑、聚矽氧系黏著劑、胺基甲酸酯系黏著劑、聚酯系黏著劑、聚乙烯醚系黏著劑等。該些之中，較佳為與保護膜10之密接性高，且切晶步驟等中可有效果地抑制工件或加工物之脫落之丙烯酸系黏著劑。
另一方面，能量線硬化性黏著劑會因能量線照射而黏著力降低，故於欲使工件或加工物與黏著片70分離時，可藉由進行能量線照射而容易地使其分離。
黏著劑層72之厚度只要可於使用複合片300之各步驟中適當地發揮功能，則不作特別限定。具體而言，較佳為1μm~50μm，尤佳為2μm~30μm，進而較佳為3μm ~20μm。
以上，已對本發明之實施形態進行了說明，但本發明不僅限定於上述實施形態，當然可添加各種變更。
例如以上之各實施形態中，作為半導體元件，而列舉半導體(Si)晶片為例進行了說明，亦可使用GaAs(砷化鎵)等其他半導體裸晶零件，還可使用CSP(Chip Size Package，晶片尺寸封裝)等封裝體零件。
進而第1實施形態中，保護膜10之接著劑層12亦可由含有玻璃質材料等非導電性無機材料之材料而構成。由此，因可提高保護膜10整體之剛性(彈性率)，故可進一步抑制第1半導體晶片C1之翹曲。而且，接著劑層12能夠單獨地構成保護膜10，而可實現保護膜之薄化。

Claims (11)

  1. 一種半導體用保護膜，包括：保護層，由玻璃質材料構成；以及接著劑層，於至少一部分具有印刷層，且設置於前述保護層之一面。
  2. 如請求項1所記載之半導體用保護膜，其中前述保護層由板玻璃構成。
  3. 如請求項1或2所記載之半導體用保護膜，其中前述保護層具有10μm以上且300μm以下之厚度。
  4. 一種半導體裝置，包括：配線基板；半導體元件，以倒裝晶片的方式封裝於前述配線基板；以及保護膜，係具有：保護層，由玻璃質材料構成；以及接著劑層，於至少一部分具有印刷層，設置於前述保護層之一面且接合於前述半導體元件之背面。
  5. 如請求項4所記載之半導體裝置，其中前述保護層由板玻璃構成。
  6. 如請求項5所記載之半導體裝置，其中前述保護膜具有設置於前述保護層之至少一面之印刷層。
  7. 如請求項6所記載之半導體裝置，其中前述印刷層由前述保護層或前述接著劑層之至少一部分構成。
  8. 如請求項4至7中任一項所記載之半導體裝置，其中前述保護層具有10μm以上且300μm以下之厚度。
  9. 如請求項4至7中任一項所記載之半導體裝置，其進而包括電性連接於前述配線基板之半導體封裝體零件；前述半導體元件配置於前述配線基板與前述半導體封裝體零件之間。
  10. 一種半導體裝置，包括：第1配線基板；第1半導體元件，以倒裝晶片的方式封裝於前述第1配線基板；第2半導體元件；以及第2配線基板，具有由非導電性無機材料構成之基材、設置於前述基材且將前述第1配線基板與前述第2半導體元件之間電性連接之配線層、及設置於前述基材之一面且接合於前述第1半導體元件之背面之接著劑層，並配置於前述第1半導體元件與前述第2半導體元件之間。
  11. 一種複合片，包括：黏著片，於基底層之一面側積層有黏著劑層而成；以及保護膜，積層於前述黏著片之前述黏著層側；前述保護膜具有：保護層，由玻璃質材料構成；以及接著劑層，於至少一部分具有印刷層，且設置於前述保護層之與前述黏著層側相反側之面。
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