CN107636806A - 具有厚的顶层金属设计的功率半导体器件和用于制造这样的功率半导体器件的方法 - Google Patents
具有厚的顶层金属设计的功率半导体器件和用于制造这样的功率半导体器件的方法 Download PDFInfo
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- CN107636806A CN107636806A CN201680023722.6A CN201680023722A CN107636806A CN 107636806 A CN107636806 A CN 107636806A CN 201680023722 A CN201680023722 A CN 201680023722A CN 107636806 A CN107636806 A CN 107636806A
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15164955 | 2015-04-24 | ||
EP15164955.5 | 2015-04-24 | ||
PCT/EP2016/058057 WO2016169818A1 (en) | 2015-04-24 | 2016-04-13 | Power semiconductor device with thick top-metal-design and method for manufacturing such power semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107636806A true CN107636806A (zh) | 2018-01-26 |
CN107636806B CN107636806B (zh) | 2021-03-12 |
Family
ID=53002567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201680023722.6A Active CN107636806B (zh) | 2015-04-24 | 2016-04-13 | 具有厚的顶层金属设计的功率半导体器件和用于制造这样的功率半导体器件的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10141196B2 (zh) |
EP (1) | EP3164890B1 (zh) |
JP (1) | JP6337217B1 (zh) |
CN (1) | CN107636806B (zh) |
WO (1) | WO2016169818A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110571260A (zh) * | 2018-06-06 | 2019-12-13 | 赛米控电子股份有限公司 | 具有均匀化结构的体积导电功率半导体部件及其操作方法 |
CN111326566A (zh) * | 2018-12-14 | 2020-06-23 | 英飞凌科技股份有限公司 | 功率半导体器件 |
CN115332325A (zh) * | 2022-10-11 | 2022-11-11 | 深圳市威兆半导体股份有限公司 | 半导体器件及其制造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018016029A1 (ja) * | 2016-07-20 | 2018-01-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2021007182A (ja) * | 2020-10-19 | 2021-01-21 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
WO2022202088A1 (ja) * | 2021-03-26 | 2022-09-29 | ローム株式会社 | 半導体装置 |
Citations (5)
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JP2005011879A (ja) * | 2003-06-17 | 2005-01-13 | Canon Inc | 光起電力素子の製造方法及び製造装置 |
CN102157363A (zh) * | 2011-03-08 | 2011-08-17 | 电子科技大学 | 一种功率器件衬底背面的离子注入方法 |
CN102184855A (zh) * | 2010-05-06 | 2011-09-14 | 天津环鑫科技发展有限公司 | 一种具有场截止构造的非穿通型沟槽igbt制造方法 |
US20110254071A1 (en) * | 2009-11-20 | 2011-10-20 | Force Mos Technology Co. Ltd. | Shielded trench mosfet with multiple trenched floating gates as termination |
US20140361312A1 (en) * | 2012-05-15 | 2014-12-11 | Fuji Electric Co., Ltd. | Semiconductor device |
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JP3907174B2 (ja) | 2002-02-26 | 2007-04-18 | 新電元工業株式会社 | 半導体装置 |
JP4471563B2 (ja) * | 2002-10-25 | 2010-06-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2005303218A (ja) * | 2004-04-16 | 2005-10-27 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5431777B2 (ja) * | 2009-04-20 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5754425B2 (ja) * | 2011-09-27 | 2015-07-29 | 株式会社デンソー | 半導体装置 |
JP2013232564A (ja) * | 2012-04-27 | 2013-11-14 | National Institute Of Advanced Industrial & Technology | 半導体装置および半導体装置の製造方法 |
JP5807724B2 (ja) | 2012-09-13 | 2015-11-10 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
EP2747142A1 (en) | 2012-12-20 | 2014-06-25 | ABB Technology AG | Insulated gate bipolar transistor and method of manufacturing the same |
JP6150542B2 (ja) * | 2013-02-04 | 2017-06-21 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
WO2014125565A1 (ja) * | 2013-02-12 | 2014-08-21 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2015041638A (ja) | 2013-08-20 | 2015-03-02 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
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2016
- 2016-04-13 WO PCT/EP2016/058057 patent/WO2016169818A1/en active Application Filing
- 2016-04-13 CN CN201680023722.6A patent/CN107636806B/zh active Active
- 2016-04-13 EP EP16717322.8A patent/EP3164890B1/en active Active
- 2016-04-13 JP JP2017555541A patent/JP6337217B1/ja active Active
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2017
- 2017-09-25 US US15/714,094 patent/US10141196B2/en active Active
Patent Citations (5)
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CN107636806B (zh) | 2021-03-12 |
US20180012773A1 (en) | 2018-01-11 |
JP6337217B1 (ja) | 2018-06-06 |
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US10141196B2 (en) | 2018-11-27 |
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WO2016169818A1 (en) | 2016-10-27 |
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