CN107634008B - 一种高压功率器件的终端结构的制作方法 - Google Patents
一种高压功率器件的终端结构的制作方法 Download PDFInfo
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- CN107634008B CN107634008B CN201710552953.2A CN201710552953A CN107634008B CN 107634008 B CN107634008 B CN 107634008B CN 201710552953 A CN201710552953 A CN 201710552953A CN 107634008 B CN107634008 B CN 107634008B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims description 45
- 238000005530 etching Methods 0.000 claims abstract description 40
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 17
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- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 35
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- 238000002161 passivation Methods 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
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- 238000001039 wet etching Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- -1 aluminum-silicon-copper Chemical compound 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
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- 230000015556 catabolic process Effects 0.000 abstract description 13
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- 238000002360 preparation method Methods 0.000 abstract description 4
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 abstract description 2
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- 239000010410 layer Substances 0.000 description 115
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- 238000000280 densification Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- 238000009826 distribution Methods 0.000 description 1
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- 238000009616 inductively coupled plasma Methods 0.000 description 1
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- 239000011241 protective layer Substances 0.000 description 1
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CN113675088A (zh) * | 2020-05-15 | 2021-11-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
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CN104051260A (zh) * | 2013-03-15 | 2014-09-17 | 上海华虹宏力半导体制造有限公司 | 沟槽型肖特基二极管的结构及制作方法 |
CN105118857A (zh) * | 2015-07-20 | 2015-12-02 | 青岛佳恩半导体有限公司 | 一种沟槽型功率mosfet的制造方法 |
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JPS61242024A (ja) * | 1985-04-19 | 1986-10-28 | Matsushita Electronics Corp | エツチング終点検出方法 |
US8680610B2 (en) * | 2009-12-17 | 2014-03-25 | Force Mos Technology Co., Ltd. | Trench MOSFET having floating dummy cells for avalanche improvement |
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CN104051260A (zh) * | 2013-03-15 | 2014-09-17 | 上海华虹宏力半导体制造有限公司 | 沟槽型肖特基二极管的结构及制作方法 |
CN105118857A (zh) * | 2015-07-20 | 2015-12-02 | 青岛佳恩半导体有限公司 | 一种沟槽型功率mosfet的制造方法 |
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Address after: 610100 Chengdu Free Trade Pilot Area, Sichuan Province Applicant after: Chengdu Pyle Miers Semiconductor Co. Ltd. Applicant after: Global energy Internet Institute, Inc. Applicant after: State Grid Corporation of China Applicant after: Electric Power Research Institute of State Grid Shandong Electric Power Company Address before: 610100 Chengdu Free Trade Pilot Area, Sichuan Province Applicant before: Chengdu Pyle Miers Semiconductor Co. Ltd. Applicant before: Global energy Internet Institute, Inc. Applicant before: State Grid Corporation of China Applicant before: Electric Power Research Institute of State Grid Shandong Electric Power Company |
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