CN107564993B - 光开关 - Google Patents

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Publication number
CN107564993B
CN107564993B CN201710464955.6A CN201710464955A CN107564993B CN 107564993 B CN107564993 B CN 107564993B CN 201710464955 A CN201710464955 A CN 201710464955A CN 107564993 B CN107564993 B CN 107564993B
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CN
China
Prior art keywords
layer
light
optical switch
optical
thyristor
Prior art date
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CN201710464955.6A
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English (en)
Chinese (zh)
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CN107564993A (zh
Inventor
近藤崇
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Fujifilm Business Innovation Corp
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Fujifilm Business Innovation Corp
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Publication of CN107564993A publication Critical patent/CN107564993A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
CN201710464955.6A 2016-06-30 2017-06-19 光开关 Active CN107564993B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-129756 2016-06-30
JP2016129756A JP6737008B2 (ja) 2016-06-30 2016-06-30 光スイッチ

Publications (2)

Publication Number Publication Date
CN107564993A CN107564993A (zh) 2018-01-09
CN107564993B true CN107564993B (zh) 2023-05-23

Family

ID=60808053

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710464955.6A Active CN107564993B (zh) 2016-06-30 2017-06-19 光开关

Country Status (3)

Country Link
US (1) US10389353B2 (ja)
JP (1) JP6737008B2 (ja)
CN (1) CN107564993B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6737008B2 (ja) * 2016-06-30 2020-08-05 富士ゼロックス株式会社 光スイッチ
JP6369613B1 (ja) * 2017-09-21 2018-08-08 富士ゼロックス株式会社 発光部品、プリントヘッド及び画像形成装置
US20210074880A1 (en) * 2018-12-18 2021-03-11 Bolb Inc. Light-output-power self-awareness light-emitting device
CN110620169B (zh) * 2019-09-10 2020-08-28 北京工业大学 一种基于共振腔的横向电流限制高效率发光二极管
TWI750664B (zh) * 2020-05-19 2021-12-21 錼創顯示科技股份有限公司 微型發光二極體晶片
GB202013414D0 (en) * 2020-08-27 2020-10-14 Ams Sensors Singapore Pte Ltd Light replication/retransmission apparatus and method
JP2022168786A (ja) * 2021-04-26 2022-11-08 富士フイルムビジネスイノベーション株式会社 発光部品、光計測装置、画像形成装置および発光部品の製造方法
CN114361288A (zh) * 2022-01-04 2022-04-15 中国工程物理研究院流体物理研究所 一种大功率碳化硅基光触发多门极半导体开关芯片
GB2621391A (en) * 2022-08-11 2024-02-14 Iqe Plc Layered structure

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132982A (en) * 1991-05-09 1992-07-21 Bell Communications Research, Inc. Optically controlled surface-emitting lasers
JPH07106689A (ja) * 1993-10-01 1995-04-21 Toyota Motor Corp 半導体レーザー
US5625636A (en) * 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
JP2001060718A (ja) * 1999-08-23 2001-03-06 Nippon Sheet Glass Co Ltd 発光サイリスタおよび自己走査型発光装置
US6781209B1 (en) * 1999-07-28 2004-08-24 Infineon Technologies Ag Optoelectronic component with thermally conductive auxiliary carrier
CN101237123A (zh) * 2007-02-02 2008-08-06 富士施乐株式会社 垂直腔面发射激光二极管及其制造方法和相关装置
WO2015129610A1 (ja) * 2014-02-26 2015-09-03 学校法人名城大学 ｎｐｎ型窒化物半導体発光素子の製造方法、およびｎｐｎ型窒化物半導体発光素子
JP2016039338A (ja) * 2014-08-11 2016-03-22 富士ゼロックス株式会社 発光サイリスタ、光源ヘッド、および画像形成装置

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68929071T2 (de) * 1988-03-18 2000-02-03 Nippon Sheet Glass Co Ltd Selbstabtastende Anordnung von lichtemittierenden Bauelementen
JP2577034B2 (ja) 1988-03-18 1997-01-29 日本板硝子株式会社 自己走査形発光素子アレイおよびその駆動方法
US5814841A (en) * 1988-03-18 1998-09-29 Nippon Sheet Glass Co., Ltd. Self-scanning light-emitting array
US5404373A (en) * 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
JP2830591B2 (ja) * 1992-03-12 1998-12-02 日本電気株式会社 半導体光機能素子
JP3016302B2 (ja) * 1992-04-23 2000-03-06 日本電気株式会社 ｐｎｐｎ半導体素子とその駆動回路
JPH0793419B2 (ja) * 1992-11-04 1995-10-09 日本電気株式会社 受光発光集積素子
WO1997012405A1 (en) * 1995-09-25 1997-04-03 Nippon Sheet Glass Co., Ltd. Surface light-emitting element and self-scanning type light-emitting device
JP4649701B2 (ja) 2000-04-24 2011-03-16 富士ゼロックス株式会社 自己走査型発光装置
US6479844B2 (en) * 2001-03-02 2002-11-12 University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
GB2379797A (en) * 2001-09-15 2003-03-19 Zarlink Semiconductor Ab Surface Emitting Laser
JP4066654B2 (ja) * 2001-12-19 2008-03-26 富士ゼロックス株式会社 面発光型半導体レーザ装置及びその製造方法
US7989825B2 (en) * 2003-06-26 2011-08-02 Fuji Xerox Co., Ltd. Lens-attached light-emitting element and method for manufacturing the same
US7057214B2 (en) * 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches
US7288469B2 (en) * 2004-12-03 2007-10-30 Eastman Kodak Company Methods and apparatuses for forming an article
JP2009286048A (ja) 2008-05-30 2009-12-10 Fuji Xerox Co Ltd 光源ヘッド、及び画像形成装置
JP2012019041A (ja) * 2010-07-07 2012-01-26 Furukawa Electric Co Ltd:The 面発光レーザ
JP2012204677A (ja) * 2011-03-25 2012-10-22 Fuji Xerox Co Ltd 発光サイリスタ、光源ヘッド、及び画像形成装置
JP6056154B2 (ja) * 2011-07-21 2017-01-11 富士ゼロックス株式会社 発光素子、発光素子アレイ、光書込みヘッドおよび画像形成装置
JP6123559B2 (ja) * 2013-08-07 2017-05-10 富士ゼロックス株式会社 発光サイリスタ、自己走査型発光素子アレイ、光書込みヘッドおよび画像形成装置、発光サイリスタおよび自己走査型発光素子アレイの製造方法
US9147817B2 (en) * 2013-09-17 2015-09-29 Fuji Xerox Co., Ltd. Semiconductor light-emitting element, light source head, and image forming apparatus
KR102139681B1 (ko) * 2014-01-29 2020-07-30 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 발광소자 어레이 모듈 및 발광소자 어레이 칩들을 제어하는 방법
US9755060B2 (en) * 2015-06-11 2017-09-05 Opel Solar, Inc. Fabrication methodology for optoelectronic integrated circuits
US9590136B2 (en) * 2015-06-11 2017-03-07 Opel Solar, Inc. Semiconductor device for optoelectronic integrated circuits
US9679987B2 (en) * 2015-06-11 2017-06-13 The University Of Connecticut Fabrication methodology for optoelectronic integrated circuits
JP2017174906A (ja) * 2016-03-22 2017-09-28 富士ゼロックス株式会社 発光部品、プリントヘッド及び画像形成装置
JP6210120B2 (ja) * 2016-03-29 2017-10-11 富士ゼロックス株式会社 発光部品、プリントヘッド及び画像形成装置
JP6729079B2 (ja) * 2016-06-30 2020-07-22 富士ゼロックス株式会社 発光部品及び発光装置
JP6737008B2 (ja) * 2016-06-30 2020-08-05 富士ゼロックス株式会社 光スイッチ
JP6812693B2 (ja) * 2016-07-27 2021-01-13 富士ゼロックス株式会社 レーザ部品及びレーザ光発生装置
JP6812692B2 (ja) * 2016-07-27 2021-01-13 富士ゼロックス株式会社 レーザ部品、レーザ光発生装置及び光干渉断層計
US11043530B2 (en) * 2017-02-13 2021-06-22 Fujifilm Business Innovation Corp. Light-emitting component having light-absorbing layer, light-emitting device, and image forming apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132982A (en) * 1991-05-09 1992-07-21 Bell Communications Research, Inc. Optically controlled surface-emitting lasers
US5625636A (en) * 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
JPH07106689A (ja) * 1993-10-01 1995-04-21 Toyota Motor Corp 半導体レーザー
US6781209B1 (en) * 1999-07-28 2004-08-24 Infineon Technologies Ag Optoelectronic component with thermally conductive auxiliary carrier
JP2001060718A (ja) * 1999-08-23 2001-03-06 Nippon Sheet Glass Co Ltd 発光サイリスタおよび自己走査型発光装置
CN101237123A (zh) * 2007-02-02 2008-08-06 富士施乐株式会社 垂直腔面发射激光二极管及其制造方法和相关装置
WO2015129610A1 (ja) * 2014-02-26 2015-09-03 学校法人名城大学 ｎｐｎ型窒化物半導体発光素子の製造方法、およびｎｐｎ型窒化物半導体発光素子
JP2016039338A (ja) * 2014-08-11 2016-03-22 富士ゼロックス株式会社 発光サイリスタ、光源ヘッド、および画像形成装置

Also Published As

Publication number Publication date
JP6737008B2 (ja) 2020-08-05
JP2018004867A (ja) 2018-01-11
US10389353B2 (en) 2019-08-20
US20180006645A1 (en) 2018-01-04
CN107564993A (zh) 2018-01-09

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