CN107425020B - 辐射传感器 - Google Patents

辐射传感器 Download PDF

Info

Publication number
CN107425020B
CN107425020B CN201610942592.8A CN201610942592A CN107425020B CN 107425020 B CN107425020 B CN 107425020B CN 201610942592 A CN201610942592 A CN 201610942592A CN 107425020 B CN107425020 B CN 107425020B
Authority
CN
China
Prior art keywords
electrode
pixel
pixel circuit
layer
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610942592.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN107425020A (zh
Inventor
L·E·安托努克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Michigan Ann Arbor
Original Assignee
University of Michigan Ann Arbor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Michigan Ann Arbor filed Critical University of Michigan Ann Arbor
Priority claimed from CN201080034885.7A external-priority patent/CN102576715B/zh
Publication of CN107425020A publication Critical patent/CN107425020A/zh
Application granted granted Critical
Publication of CN107425020B publication Critical patent/CN107425020B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
CN201610942592.8A 2009-06-17 2010-06-16 辐射传感器 Active CN107425020B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US21353009P 2009-06-17 2009-06-17
US61/213,530 2009-06-17
CN201080034885.7A CN102576715B (zh) 2009-06-17 2010-06-16 平板x射线成像器中的光电二极管和其他传感器结构以及用于基于薄膜电子器件来改进平板x射线成像器中的光电二极管和其他传感器结构的拓扑均匀性的方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201080034885.7A Division CN102576715B (zh) 2009-06-17 2010-06-16 平板x射线成像器中的光电二极管和其他传感器结构以及用于基于薄膜电子器件来改进平板x射线成像器中的光电二极管和其他传感器结构的拓扑均匀性的方法

Publications (2)

Publication Number Publication Date
CN107425020A CN107425020A (zh) 2017-12-01
CN107425020B true CN107425020B (zh) 2019-10-18

Family

ID=43353461

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610942592.8A Active CN107425020B (zh) 2009-06-17 2010-06-16 辐射传感器

Country Status (9)

Country Link
US (5) US8492728B2 (enExample)
EP (2) EP3447802B1 (enExample)
JP (1) JP5744861B2 (enExample)
KR (1) KR101819757B1 (enExample)
CN (1) CN107425020B (enExample)
CA (1) CA2765702A1 (enExample)
ES (2) ES2880357T3 (enExample)
TW (2) TWI615956B (enExample)
WO (1) WO2010148060A1 (enExample)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9741901B2 (en) * 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
EP3447802B1 (en) 2009-06-17 2021-04-21 The Regents Of The University Of Michigan Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics
TWI424574B (zh) * 2009-07-28 2014-01-21 Prime View Int Co Ltd 數位ｘ光探測面板及其製作方法
RU2426694C1 (ru) * 2010-02-15 2011-08-20 Общество С Ограниченной Ответственностью "Сцинтилляционные Технологии Радиационного Контроля" Неорганический сцинтилляционный материал, кристаллический сцинтиллятор и детектор излучения
KR20120076439A (ko) * 2010-12-29 2012-07-09 삼성모바일디스플레이주식회사 엑스선 검출 장치
KR101257699B1 (ko) * 2011-02-07 2013-04-24 삼성전자주식회사 방사선 디텍터 및 그 제조방법
US8969779B2 (en) * 2011-02-11 2015-03-03 Nokia Corporation Photodetecting structure with photon sensing graphene layer(s) and vertically integrated graphene field effect transistor
US20120242621A1 (en) * 2011-03-24 2012-09-27 Christopher James Brown Image sensor and display device incorporating the same
JP5875420B2 (ja) * 2011-04-07 2016-03-02 キヤノン株式会社 放射線検出素子およびその製造方法
US9347893B2 (en) * 2011-07-26 2016-05-24 Robert Sigurd Nelson Enhanced resolution imaging systems for digital radiography
RU2605518C2 (ru) * 2011-07-28 2016-12-20 Конинклейке Филипс Н.В. Сцинтиллятор на основе тербия для детектора
CN103296035B (zh) * 2012-02-29 2016-06-08 中国科学院微电子研究所 X射线平板探测器及其制造方法
CN102790068B (zh) * 2012-07-26 2014-10-22 北京京东方光电科技有限公司 一种传感器的制造方法
CN102790069B (zh) * 2012-07-26 2014-09-10 北京京东方光电科技有限公司 一种传感器及其制造方法
KR101965259B1 (ko) * 2012-07-27 2019-08-08 삼성디스플레이 주식회사 엑스선 검출기
US8872120B2 (en) * 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
WO2014036002A1 (en) * 2012-08-28 2014-03-06 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
US9214782B2 (en) * 2012-09-11 2015-12-15 The Board Of Trustees Of The Leland Stanford Junior University Dielectric laser electron accelerators
DE102013217278B4 (de) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung
TWI496277B (zh) * 2012-12-03 2015-08-11 Innocom Tech Shenzhen Co Ltd Ｘ光偵測裝置
CN104838287B (zh) 2012-12-12 2018-08-17 皇家飞利浦有限公司 用于光子计数探测器的自适应持续电流补偿
US9773824B2 (en) * 2012-12-13 2017-09-26 Cbrite Inc. Active matrix light emitting diode array and projector display comprising it
US9935152B2 (en) 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
KR101919426B1 (ko) * 2013-01-08 2018-11-19 삼성전자주식회사 그래핀 전자 소자 및 그 제조 방법
RU2532645C1 (ru) 2013-04-29 2014-11-10 Общество с ограниченной ответственностью "Научно-технический центр "МТ" (ООО "НТЦ-МТ") Способ формирования структурированного сцинтиллятора на поверхности пикселированного фотоприемника (варианты) и сцинтилляционный детектор, полученнный данным способом (варианты)
KR101520433B1 (ko) * 2013-07-08 2015-05-14 주식회사 레이언스 이미지센서 및 이의 제조방법
TWI587186B (zh) 2013-07-15 2017-06-11 Ying-Jia Xue Multi-function display
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
WO2015038986A1 (en) * 2013-09-13 2015-03-19 Baek Seung H Dental x-ray imaging system having higher spatial resolution
TWI535289B (zh) * 2013-11-22 2016-05-21 財團法人工業技術研究院 Ｘ光平板感測器之殘留電荷消除方法及裝置
US9917133B2 (en) 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
WO2015107777A1 (ja) * 2014-01-15 2015-07-23 シャープ株式会社 エネルギー線検出装置
WO2017034644A2 (en) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Method of providing an electronic device and electronic device thereof
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
US20160013243A1 (en) * 2014-03-10 2016-01-14 Dpix, Llc Photosensor arrays for detection of radiation and process for the preparation thereof
US10732131B2 (en) 2014-03-13 2020-08-04 General Electric Company Curved digital X-ray detector for weld inspection
WO2015141777A1 (ja) * 2014-03-20 2015-09-24 シャープ株式会社 光検出装置
EP3143641A4 (en) 2014-05-13 2018-01-17 Arizona Board of Regents, a Body Corporate of the State of Arizona acting for and on behalf of Arizona State University Method of providing an electronic device and electronic device thereof
KR102349955B1 (ko) 2014-08-06 2022-01-11 삼성전자주식회사 다중 검출 모드를 지닌 포토 센서 및 그 동작 방법
US9520437B2 (en) * 2014-08-14 2016-12-13 Cbrite Inc. Flexible APS X-ray imager with MOTFT pixel readout and a pin diode sensing element
US9515106B2 (en) * 2014-08-15 2016-12-06 Perkinelmer Holdings, Inc. Radiation imaging device with metal-insulator-semiconductor photodetector and thin film transistor
JP2016062997A (ja) * 2014-09-16 2016-04-25 ソニー株式会社 撮像素子、固体撮像装置及び電子デバイス
KR20160048535A (ko) * 2014-10-24 2016-05-04 삼성전자주식회사 엑스선 디텍터와 그 제조방법과 엑스선 디텍터를 포함하는 시스템과 그 동작방법
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
EP3038157A1 (en) * 2014-12-22 2016-06-29 Nokia Technologies OY Detector structure for electromagnetic radiation sensing
HK1249661A1 (zh) 2015-02-17 2018-11-02 瑞德兰科技有限公司 高性能辐射检测器和其制造方法
US10269839B2 (en) * 2015-03-26 2019-04-23 Carestream Health, Inc. Apparatus and method using a dual gate TFT structure
CN104716152B (zh) * 2015-04-01 2018-09-14 京东方科技集团股份有限公司 X射线平板探测器及其制备方法与白色绝缘材料
CN104810375B (zh) * 2015-04-28 2018-09-04 合肥鑫晟光电科技有限公司 一种阵列基板及其制作方法和一种显示装置
KR101723438B1 (ko) * 2015-06-16 2017-04-06 한국원자력연구원 방사선 검출기 및 그 제조 방법
CN105093259B (zh) * 2015-08-14 2018-12-18 京东方科技集团股份有限公司 射线探测器
US9786856B2 (en) 2015-08-20 2017-10-10 Dpix, Llc Method of manufacturing an image sensor device
EP3163325B1 (en) 2015-10-28 2020-02-12 Nokia Technologies Oy An apparatus and associated methods for computed tomography
JP6700737B2 (ja) * 2015-11-20 2020-05-27 キヤノン株式会社 放射線撮像システム、信号処理装置、及び、放射線画像の信号処理方法
KR102547798B1 (ko) 2015-12-08 2023-06-26 삼성전자주식회사 방사선 검출기 및 이를 채용한 방사선 촬영 장치
US11137504B2 (en) * 2016-02-05 2021-10-05 General Electric Company Tiled radiation detector
EP3206235B1 (en) * 2016-02-12 2021-04-28 Nokia Technologies Oy Method of forming an apparatus comprising a two dimensional material
CN107134496B (zh) * 2016-02-29 2019-05-31 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法、显示面板及显示装置
KR102567713B1 (ko) * 2016-03-24 2023-08-17 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
CN105789324B (zh) * 2016-04-15 2019-05-03 京东方科技集团股份有限公司 传感器及其制造方法、电子设备
WO2017218898A2 (en) 2016-06-16 2017-12-21 Arizona Board Of Regents On Behalf Of Arizona State University Electronic devices and related methods
US9929215B2 (en) 2016-07-12 2018-03-27 Dpix, Llc Method of optimizing an interface for processing of an organic semiconductor
US10125312B2 (en) 2016-09-06 2018-11-13 Ut-Battelle, Llc Divalent-ion-doped single crystal alkali halide scintillators
US9947704B1 (en) * 2016-10-18 2018-04-17 Cbrite Inc. Method of recovery of MOTFT backplane after a-Si photodiode fabrication
JP7048588B2 (ja) * 2016-11-30 2022-04-05 ザ・リサーチ・ファウンデーション・フォー・ザ・ステイト・ユニヴァーシティ・オブ・ニューヨーク ハイブリッド・アクティブマトリクス・フラットパネル検出器システムおよび方法
US10366674B1 (en) * 2016-12-27 2019-07-30 Facebook Technologies, Llc Display calibration in electronic displays
CN106684199B (zh) * 2017-02-13 2018-04-03 中北大学 金属微纳超结构表面等离激元超快探测结构
CN114252902B (zh) * 2017-04-24 2025-10-03 睿生光电股份有限公司 感测装置
JP7150415B2 (ja) * 2017-04-27 2022-10-11 コーニンクレッカ フィリップス エヌ ヴェ 磁気共鳴イメージング誘導放射線治療用の医療機器
CN107219698B (zh) * 2017-06-13 2020-04-03 京东方科技集团股份有限公司 显示面板和显示装置
KR20200083433A (ko) 2017-08-03 2020-07-08 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 비대칭 반사 스크린을 갖는 듀얼-스크린 디지털 라디오그래피
WO2019084701A1 (en) 2017-10-30 2019-05-09 Shenzhen Xpectvision Technology Co., Ltd. Image sensor based on charge carrier avalanche
KR102552845B1 (ko) * 2017-12-19 2023-07-06 엘지디스플레이 주식회사 엑스레이 영상감지소자
US10797193B2 (en) * 2018-01-23 2020-10-06 Lumentum Operations Llc Bias control structure for avalanche photodiodes
US10684555B2 (en) * 2018-03-22 2020-06-16 Applied Materials, Inc. Spatial light modulator with variable intensity diodes
CN110398767B (zh) * 2018-04-25 2020-11-10 中国科学院高能物理研究所 射线探测电路
US11016202B2 (en) 2018-04-26 2021-05-25 Varian Medical Systems, Inc. Imaging devices
US10444378B1 (en) * 2018-04-27 2019-10-15 Varian Medical Systems, Inc. Imaging devices
EP3784132B1 (en) * 2018-04-26 2025-02-19 Varian Medical Systems, Inc. Imaging devices
US10627530B2 (en) * 2018-05-07 2020-04-21 Ka Imaging Inc. Method and apparatus for a high resolution, high speed radiation imaging
JP2019220685A (ja) 2018-06-19 2019-12-26 シャープ株式会社 放射線検出器
US10418408B1 (en) * 2018-06-22 2019-09-17 Omnivision Technologies, Inc. Curved image sensor using thermal plastic substrate material
CN110660816B (zh) * 2018-06-29 2022-06-10 京东方科技集团股份有限公司 一种平板探测器
CN109742178B (zh) * 2019-01-29 2020-07-17 西安工业大学 一种透红外的高灵敏可见光探测器及其制备方法
CN110031883B (zh) * 2019-03-05 2022-06-07 中国辐射防护研究院 一种基于无线电容式高电离辐射剂量传感器
EP3948355A4 (en) * 2019-03-29 2022-10-12 Shenzhen Xpectvision Technology Co., Ltd. Radiation detectors with scintillators
US10910432B1 (en) * 2019-07-23 2021-02-02 Cyber Medical Imaging, Inc. Use of surface patterning for fabricating a single die direct capture dental X-ray imaging sensor
US11551777B2 (en) 2019-08-09 2023-01-10 Micron Technology, Inc. Apparatus with circuit-locating mechanism
US11378701B2 (en) 2019-10-08 2022-07-05 Redlen Technologies, Inc. Low dark current radiation detector and method of making the same
US11086032B1 (en) * 2020-03-04 2021-08-10 Prismatic Sensors Ab Edge-on X-ray detector
US11733408B2 (en) 2020-04-28 2023-08-22 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof
CN112133717B (zh) * 2020-09-24 2024-03-29 京东方科技集团股份有限公司 一种探测基板及射线探测器
FR3119708B1 (fr) * 2021-02-11 2023-08-25 Trixell Détecteur numérique à étages de conversion superposés
EP4068363B1 (en) * 2021-03-30 2023-06-07 Siemens Healthcare GmbH Radiation detector with butted absorber tiles without dead areas
JP2021101491A (ja) * 2021-03-31 2021-07-08 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
JP2022167161A (ja) * 2021-04-22 2022-11-04 シャープディスプレイテクノロジー株式会社 Ｘ線撮像パネル及びその製造方法
US20240321928A1 (en) * 2021-08-25 2024-09-26 Beijing Boe Sensor Technology Co., Ltd. Active pixel image sensor and display device
KR20230049787A (ko) 2021-10-06 2023-04-14 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR20230149893A (ko) 2022-04-20 2023-10-30 삼성디스플레이 주식회사 표시 장치
KR20240050556A (ko) 2022-10-11 2024-04-19 삼성디스플레이 주식회사 표시장치
CN119894054B (zh) * 2024-12-25 2025-12-19 北京大学深圳研究生院 一种金属氧化物薄膜晶体管及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0139366A1 (en) * 1983-08-23 1985-05-02 Kabushiki Kaisha Toshiba Method of manufacturing a soldi-state image pickup device
US6288388B1 (en) * 1997-09-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric converter wherein the lower electrode has bends
CN1627535A (zh) * 2003-12-12 2005-06-15 株式会社神户制钢所 金刚石半导体器件及其制造方法
CN101359054A (zh) * 2007-07-31 2009-02-04 富士胶片株式会社 图像检测装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3050402B2 (ja) 1989-09-06 2000-06-12 ユニヴァースティ オブ ミシガン メガボルト光子および診断用ｘ線のリアルタイム画像処理および線量測定用多素子アモルファスシリコン検出器アレイ
US5262649A (en) * 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
CA2034118A1 (en) 1990-02-09 1991-08-10 Nang Tri Tran Solid state radiation detector
US5057892A (en) * 1990-09-14 1991-10-15 Xsirius Photonics, Inc. Light responsive avalanche diode
US5262469A (en) * 1991-12-13 1993-11-16 Shimadzu Corporation Oxynitride glass fiber for composite products, and glass fiber-reinforced products
JPH06314779A (ja) * 1993-04-28 1994-11-08 Nec Corp イメージセンサ
JPH08250698A (ja) * 1995-03-14 1996-09-27 Toshiba Corp 固体撮像装置
JP3957803B2 (ja) 1996-02-22 2007-08-15 キヤノン株式会社 光電変換装置
JPH1093062A (ja) * 1996-09-11 1998-04-10 Toshiba Corp 光検出器
JP3838806B2 (ja) * 1999-03-26 2006-10-25 株式会社東芝 信号増倍ｘ線撮像装置
JP3984808B2 (ja) 2000-09-07 2007-10-03 キヤノン株式会社 信号処理装置及びそれを用いた撮像装置並びに放射線撮像システム
US6891194B2 (en) * 2001-02-07 2005-05-10 Sharp Kabushiki Kaisha Active matrix substrate, electromagnetic detector, and liquid crystal display apparatus
US6730914B2 (en) * 2002-02-05 2004-05-04 E-Phocus, Inc. Photoconductor-on-active-pixel (POAP) sensor utilizing equal-potential pixel electrodes
JP4147094B2 (ja) 2002-11-22 2008-09-10 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
JP3621400B2 (ja) 2003-03-03 2005-02-16 松下電器産業株式会社 固体撮像装置およびその製造方法
US7279353B2 (en) 2003-04-02 2007-10-09 Micron Technology, Inc. Passivation planarization
JP2006156555A (ja) * 2004-11-26 2006-06-15 Toshiba Corp Ｘ線平面検出器
JP2006017742A (ja) * 2005-08-24 2006-01-19 Canon Inc 放射線検出装置
JP4498283B2 (ja) * 2006-01-30 2010-07-07 キヤノン株式会社 撮像装置、放射線撮像装置及びこれらの製造方法
JP5109686B2 (ja) * 2007-06-22 2012-12-26 セイコーエプソン株式会社 検出装置及び電子機器
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
JP2009047577A (ja) * 2007-08-21 2009-03-05 Konica Minolta Medical & Graphic Inc シンチレータパネル及びその作製方法
JP5489423B2 (ja) * 2007-09-21 2014-05-14 富士フイルム株式会社 放射線撮像素子
JP2010186723A (ja) 2009-02-13 2010-08-26 Fujifilm Corp 有機ｅｌ装置及びその製造方法
EP3447802B1 (en) 2009-06-17 2021-04-21 The Regents Of The University Of Michigan Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0139366A1 (en) * 1983-08-23 1985-05-02 Kabushiki Kaisha Toshiba Method of manufacturing a soldi-state image pickup device
US6288388B1 (en) * 1997-09-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric converter wherein the lower electrode has bends
CN1627535A (zh) * 2003-12-12 2005-06-15 株式会社神户制钢所 金刚石半导体器件及其制造方法
CN101359054A (zh) * 2007-07-31 2009-02-04 富士胶片株式会社 图像检测装置

Also Published As

Publication number Publication date
US20140246596A1 (en) 2014-09-04
WO2010148060A1 (en) 2010-12-23
JP5744861B2 (ja) 2015-07-08
CN107425020A (zh) 2017-12-01
EP2443656B1 (en) 2018-11-07
US20100320391A1 (en) 2010-12-23
JP2012531046A (ja) 2012-12-06
US9880296B2 (en) 2018-01-30
KR101819757B1 (ko) 2018-01-17
CN102576715A (zh) 2012-07-11
US9395453B2 (en) 2016-07-19
KR20120027541A (ko) 2012-03-21
CA2765702A1 (en) 2010-12-23
TWI615956B (zh) 2018-02-21
TW201119021A (en) 2011-06-01
US8754379B2 (en) 2014-06-17
US8492728B2 (en) 2013-07-23
US20150301195A1 (en) 2015-10-22
US20170045629A1 (en) 2017-02-16
ES2880357T3 (es) 2021-11-24
EP2443656A1 (en) 2012-04-25
ES2710101T3 (es) 2019-04-23
EP2443656A4 (en) 2013-11-20
TWI520315B (zh) 2016-02-01
EP3447802B1 (en) 2021-04-21
TW201605034A (zh) 2016-02-01
EP3447802A1 (en) 2019-02-27
US20130292573A1 (en) 2013-11-07

Similar Documents

Publication Publication Date Title
CN107425020B (zh) 辐射传感器
US9698193B1 (en) Multi-sensor pixel architecture for use in a digital imaging system
JP7048588B2 (ja) ハイブリッド・アクティブマトリクス・フラットパネル検出器システムおよび方法
Antonuk a-Si: H TFT-based active matrix flat-panel imagers for medical x-ray applications
US20250172704A1 (en) Radiation detector and detection method
CN102576715B (zh) 平板x射线成像器中的光电二极管和其他传感器结构以及用于基于薄膜电子器件来改进平板x射线成像器中的光电二极管和其他传感器结构的拓扑均匀性的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: Michigan USA

Patentee after: University of Michigan Board of Directors

Address before: Michigan

Patentee before: THE REGENTS OF THE University OF MICHIGAN