CN107357143A - 一种清洗剂、其制备方法和应用 - Google Patents

一种清洗剂、其制备方法和应用 Download PDF

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Publication number
CN107357143A
CN107357143A CN201710613216.9A CN201710613216A CN107357143A CN 107357143 A CN107357143 A CN 107357143A CN 201710613216 A CN201710613216 A CN 201710613216A CN 107357143 A CN107357143 A CN 107357143A
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Prior art keywords
cleaning agent
corrosion inhibitor
mass fraction
agent
etchant
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CN107357143B (zh
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王溯
蒋闯
冯强强
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Shanghai Xinyang Semiconductor Material Co Ltd
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Shanghai Xinyang Semiconductor Material Co Ltd
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Priority to CN201710613216.9A priority Critical patent/CN107357143B/zh
Publication of CN107357143A publication Critical patent/CN107357143A/zh
Priority to PCT/CN2017/116442 priority patent/WO2019019533A1/zh
Priority to US16/488,001 priority patent/US11549086B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
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    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
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    • C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
    • C—CHEMISTRY; METALLURGY
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    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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    • C11D3/0073—Anticorrosion compositions
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    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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    • C11D3/30—Amines; Substituted amines ; Quaternized amines
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    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • C—CHEMISTRY; METALLURGY
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    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
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    • G03F7/42—Stripping or agents therefor
    • G03F7/428—Stripping or agents therefor using ultrasonic means only
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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Abstract

本发明公开了一种清洗剂、其制备方法和应用。所述的清洗剂，其由下述原料制得，所述的原料包括下列质量分数的组分：0.5％‑20％的含碘氧化剂、0.5％‑20％的含硼蚀刻剂、1％‑50％的吡咯烷酮类溶剂、1％‑20％的腐蚀抑制剂、0.01％‑5％的不含金属离子的表面活性剂和水，各组分质量分数之和为100％；所述清洗剂的pH值为7.5‑13.5；所述的腐蚀抑制剂为苯并三氮唑类腐蚀抑制剂、腙类腐蚀抑制剂、卡巴腙类腐蚀抑制剂和硫代卡巴腙类腐蚀抑制剂中的一种或多种。本发明的清洗剂能够在对金属和低k介电材料影响较小的情况下高效率地移除硬掩膜残留物的氮化物，选择性好，具有非常广阔的市场应用前景。

Description

一种清洗剂、其制备方法和应用
技术领域
本发明涉及一种清洗剂、其制备方法和应用。
背景技术
在集成电路的双重镶嵌加工期间，光刻法用于将图案成像在装置晶片上。光刻技术包括涂覆、曝光和显影步骤。用正性或负性光刻胶物质涂覆晶片并随后用掩模覆盖，所述掩模在随后的工艺中限定待保持或去除的图案。将掩模适当放置后，掩模已将一束单色辐射，例如紫外(UV)光或深UV(DUV)光(≈250nm或193nm)导向通过掩模，以使暴露的光刻胶材料或多或少地可溶于选择的冲洗溶液中。然后去除或“显影”可溶性光刻胶材料，从而留下与掩模相同的图案。
随后，将气相等离子刻蚀用于将显影的光刻胶涂层的图案转印至下面的层，其可以包括硬掩膜(hardmask)、层间电介质和/或蚀刻停止层。等离子刻蚀后的残余物通常沉积在后端布线的结构上，如果不去除就可能妨碍随后的硅化或接触形成。等离子刻蚀灰化后的残余物通常包括硬掩膜残留物、聚合物残留物、其它颗粒等各种残留物。在清洗这些等离子刻蚀灰化后的残余物时，需要清洗剂具有较高的选择性，例如，能够在对金属和低k介电材料影响较小的情况下高效率地移除硬掩膜残留物的氮化物。随着设备临界尺寸的持续缩小以及对于高生产效率与可靠设备性能的相应要求，需要此类改善的清洁组合物。
目前用于选择性移除含钛、含钨、含钽的蚀刻掩膜的清洗剂专利较多，如下表所示的专利或专利申请：
这些专利中虽然公开了各种清洗选择性，但对于氮化钽这一蚀刻硬掩膜组分的清洗效果及移除选择性，这些专利均效果不佳。尤其EKC科技股份有限公司的专利CN105874568A的权利要求中明确指出其移除组合物可选择性移除氮化钽，但其说明书中没有给出氮化钽相关的蚀刻实验数据。本发明的发明人采用其保护范围内的多种配方进行实验，发现其组合物及清洗方法对于选择性移除含钛和含钨蚀刻掩膜效果较佳，但对于含钽蚀刻掩膜材料(如氮化钽)的效果不佳，氮化钽无法进行有效移除。这将严重影响清洗剂的清洗效果。
因此，亟需开发一种清洗剂，其能够高选择性移氮化物蚀刻掩膜，同时与铜，钴、钽、钨、钛及低k材料相容，而且必须有效同时移除灰化蚀刻残留物。
发明内容
本发明所要解决的技术问题是为了克服现有的清洗剂对于含钽蚀刻掩膜材料(如氮化钽)的效果不佳，氮化钽无法进行有效移除等缺陷，而提供了一种清洗剂、其制备方法和应用。本发明的清洗剂能够在对金属和低k介电材料影响较小的情况下高效率地移除硬掩膜残留物的氮化物，选择性好，具有非常广阔的市场应用前景。
本发明主要是通过以下技术手段解决上述技术问题的：
本发明提供了一种清洗剂，其由下述原料制得，所述的原料包括下列质量分数的组分：0.5％-20％的含碘氧化剂、0.5％-20％的含硼蚀刻剂、1％-50％的吡咯烷酮类溶剂、1％-20％的腐蚀抑制剂、0.01％-5％的不含金属离子的表面活性剂和水，各组分质量分数之和为100％；所述清洗剂的pH值为7.5-13.5；所述的腐蚀抑制剂为苯并三氮唑类腐蚀抑制剂、腙类腐蚀抑制剂、卡巴腙类腐蚀抑制剂和硫代卡巴腙类腐蚀抑制剂中的一种或多种。
其中，所述的含碘氧化剂的质量分数优选为1％-10％，更优选为1.5％-5％。所述的含硼蚀刻剂的质量分数优选为1％-10％，更优选为1.5％-5％。所述的吡咯烷酮类溶剂的质量分数优选为5％-35％，更优选为10％-30％。所述的腐蚀抑制剂的质量分数优选为3％-15％，更优选为5％-10％。所述的表面活性剂的质量分数优选为0.1％-4％，更优选为0.2％-3％。所述清洗剂的pH值优选为8-12，更优选为9-11。
其中，所述的清洗剂中，各组分质量分数之和为100％，故水的用量优选以补足各组分质量分数之和为100％计。
其中，所述的含碘氧化剂优选为碘酸、碘酸盐、过碘酸和过碘酸盐中的一种或多种。所述的碘酸盐优选为碘酸铵和/或碘酸四甲铵。所述的过碘酸盐优选为过碘酸铵和/或过碘酸四甲铵。
其中，所述的含硼蚀刻剂可为本领域常规的含硼蚀刻剂，优选为四氟硼酸、四氟硼酸铵、四氟硼酸四甲铵、四氟硼酸四乙铵、四氟硼酸四丙铵和四氟硼酸四丁铵中的一种或多种。
其中，所述的吡咯烷酮类溶剂为本领域常规的吡咯烷酮类溶剂，优选为N上的氢被取代的吡咯烷酮类溶剂。所述的N上的氢被取代的吡咯烷酮类溶剂优选为N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-环己基吡咯烷酮和N-羟乙基吡咯烷酮中的一种或多种。
其中，所述苯并三氮唑类腐蚀抑制剂优选为苯并三氮唑、甲基苯并三氮唑和5-羧基苯并三氮唑中的一种或多种。所述腙类腐蚀抑制剂优选为苯乙酮苯腙。所述硫代卡巴腙类腐蚀抑制剂优选为二苯基硫代卡巴腙。
其中，所述的不含金属离子的表面活性剂为本领域常规的不含金属离子的表面活性剂，优选为聚乙烯吡咯烷酮和/或十二烷基苯磺酸。
所述的pH值可根据清洗剂中各组分和含量的实际情况调节。例如可使用有机酸、无机酸、无机碱、强碱弱酸盐和缓冲溶液中的一种或多种。若避免去胶剂的pH值发生剧烈波动，可使用本领域常规的缓冲溶液进行调节。所述的有机酸优选柠檬酸。所述的无机酸优选硼酸。所述的强碱弱酸盐优选氢氧化四甲铵。
其中，所述水优选去离子水、蒸馏水、纯水和超纯水中的一种或多种(例如两种)。
在本发明一优选实施方案中，所述的清洗剂，其由下述原料制得，所述的原料组分由1％-10％的含碘氧化剂、1％-10％的含硼蚀刻剂、5％-35％的吡咯烷酮类溶剂、3％-15％的腐蚀抑制剂、0.1％-4％的不含金属离子的表面活性剂和水组成，各组分质量分数之和为100％；所述清洗剂的pH值为8-12；所述的腐蚀抑制剂为苯并三氮唑类腐蚀抑制剂、腙类腐蚀抑制剂、卡巴腙类腐蚀抑制剂和硫代卡巴腙类腐蚀抑制剂中的一种或多种。
本发明还提供了一种所述的清洗剂的制备方法，其包括下列步骤：将所述的原料混合，即可。所述的混合优选为将所述的原料组分中的固体组分加入到液体组分中，搅拌均匀，即可。所述的混合的温度为室温。所述的混合后，较佳地还进一步包含振荡，过滤的操作。振荡的目的是为了使各原料组分充分混合，振荡速度和时间不限。过滤是为了除去不溶物。
本发明还提供了一种所述的清洗剂在清洗刻蚀灰化后的半导体芯片中的应用。所述的半导体芯片优选为铜互连或铝互连结构的半导体芯片。
所述的应用优选包括下列步骤：将刻蚀灰化后的半导体芯片与所述的刻蚀清洗剂接触即可。更优选包括下列步骤：将刻蚀灰化后的半导体芯片与所述的刻蚀清洗剂接触、振荡、洗涤、干燥即可。
其中，所述的接触的温度优选10℃-90℃，优选20℃-60℃，例如40-45℃。所述的接触的操作优选将刻蚀灰化后的半导体芯片浸入所述的清洗液中。所述的振荡优选在恒温振荡器中振荡。所述的振荡的温度优选10℃-90℃，优选20℃-60℃，例如40-45℃。所述的洗涤优选用水(例如去离子水、蒸馏水、纯水和超纯水中的一种或多种)洗涤。所述的干燥的方法优选用高纯度氮气吹干。
本发明中室温是指10-30℃。
在符合本领域常识的基础上，上述各优选条件，可任意组合，即得本发明各较佳实例。
本发明所用试剂和原料均市售可得。
本发明的积极进步效果在于：本发明的制备方法制得的清洗剂能够在对金属和低k介电材料影响较小的情况下高效率地移除氮化物，选择性好，清洗效佳，具有非常广阔的市场应用前景，为微电子企业解决了难题，对促进我国微电子行业的发展起了积极的作用，也具有较高的经济效益。
具体实施方式
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在所述的实施例范围之中。下列实施例中未注明具体条件的实验方法，按照常规方法和条件，或按照商品说明书选择。
下述实施例和对比例中，清洗剂的制备方法包括下列步骤：将对应的原料混合，即可。
下述实施例中，未限定具体操作温度的，均是指在室温条件下进行。
实施例1-10
表1清洗剂的各原料组分
表2各原料组分的质量分数和清洗剂pH值
对比实施例1-33
表3清洗剂的各原料组分
表4各原料组分的质量分数和清洗剂pH值
其中，对比例1-2中探索了各组分的用量上限；对比例3-8中探索了不添加含碘氧化剂的效果；对比例9-14中探索了不添加含硼蚀刻剂的效果；对比例15-21探索了使用含碘氧化剂之外的其它氧化剂的效果；对比例22-27探索了使用含硼蚀刻剂之外的其它蚀刻剂的效果；对比例28-29探索了使用吡咯烷酮类溶剂之外的其它类别有机溶剂的效果；对比例30-31探索了使用本发明组合物中腐蚀抑制剂之外的其它腐蚀抑制剂的效果；对比例32-33探索了使用含金属离子的表面活性剂的效果。
效果实施例
测试步骤：
将各种晶片(其具有沉积在硅片上的各种氮化物、金属、介电材料，各具有的材料层厚度)在50℃下浸渍在清洗剂中15分钟，并测定浸渍处理前后的晶片厚度，其中使用Four Dimensions Four Point Probe Meter 333A测定TiN、TaN、WN、Cu、Co、Ta、Ti和W的厚度，使用得自HORIBA JOBIN YVON的Auto SE Spectroscopic Ellipsometer来测量TEOS厚度。蚀刻速率计算为厚度变化(化学处理之前和之后)除以化学处理时间。化学溶液pH使用Beckman 260pH/Temp/mV计来测量。并将各清洗液在50℃下清洗等离子刻蚀灰化后的铜互联芯片，残留物移除效果由SEM结果(Hitachi S-5500)来评定。
各项测试结果见表5所示。
蚀刻速率(50℃下)，单位：
表5
清洗情况
从上述对比效果例1-33和实施效果例1-10也可以看出，本发明的清洗剂相比对比例的清洗剂，无论是蚀刻选择性，还是清洗效果，均有提升。

Claims (10)

1.一种清洗剂，其特征在于，其由下述原料制得，所述的原料包括下列质量分数的组分：0.5％-20％的含碘氧化剂、0.5％-20％的含硼蚀刻剂、1％-50％的吡咯烷酮类溶剂、1％-20％的腐蚀抑制剂、0.01％-5％的不含金属离子的表面活性剂和水，各组分质量分数之和为100％；所述清洗剂的pH值为7.5-13.5；所述的腐蚀抑制剂为苯并三氮唑类腐蚀抑制剂、腙类腐蚀抑制剂、卡巴腙类腐蚀抑制剂和硫代卡巴腙类腐蚀抑制剂中的一种或多种。
2.如权利要求1所述的清洗剂，其特征在于，
所述的含碘氧化剂的质量分数为1％-10％；
和/或，所述的含硼蚀刻剂的质量分数为1％-10％；
和/或，所述的吡咯烷酮类溶剂的质量分数为5％-35％；
和/或，所述的腐蚀抑制剂的质量分数为3％-15％；
和/或，所述的表面活性剂的质量分数为0.1％-4％；
和/或，所述清洗剂的pH值为8-12。
3.如权利要求2所述的清洗剂，其特征在于，
所述的含碘氧化剂的质量分数为1.5％-5％；
和/或，所述的含硼蚀刻剂的质量分数为1.5％-5％；
和/或，所述的吡咯烷酮类溶剂的质量分数为10％-30％；
和/或，所述的腐蚀抑制剂的质量分数为5％-10％；
和/或，所述的表面活性剂的质量分数为0.2％-3％；
和/或，所述清洗剂的pH值为9-11。
4.如权利要求1所述的清洗剂，其特征在于，
所述苯并三氮唑类腐蚀抑制剂为苯并三氮唑、甲基苯并三氮唑和5-羧基苯并三氮唑中的一种或多种；
和/或，所述腙类腐蚀抑制剂为苯乙酮苯腙；
和/或，所述硫代卡巴腙类腐蚀抑制剂为二苯基硫代卡巴腙。
5.如权利要求1所述的清洗剂，其特征在于，所述的含碘氧化剂为碘酸、碘酸盐、过碘酸和过碘酸盐中的一种或多种。
6.如权利要求5所述的清洗剂，其特征在于，所述的碘酸盐为碘酸铵和/或碘酸四甲铵；和/或，所述的过碘酸盐为过碘酸铵和/或过碘酸四甲铵。
7.如权利要求1所述的清洗剂，其特征在于，所述的含硼蚀刻剂为四氟硼酸、四氟硼酸铵、四氟硼酸四甲铵、四氟硼酸四乙铵、四氟硼酸四丙铵和四氟硼酸四丁铵中的一种或多种；和/或，所述的不含金属离子的表面活性剂为聚乙烯吡咯烷酮和/或十二烷基苯磺酸。
8.如权利要求1所述的清洗剂，其特征在于，所述的吡咯烷酮类溶剂为N上的氢被取代的吡咯烷酮类溶剂。
9.如权利要求8所述的清洗剂，其特征在于，所述的N上的氢被取代的吡咯烷酮类溶剂为N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-环己基吡咯烷酮和N-羟乙基吡咯烷酮中的一种或多种。
10.如权利要求1-9任一项所述的清洗剂，其特征在于，所述的清洗剂，其由下述原料制得，所述的原料组分由1％-10％的含碘氧化剂、1％-10％的含硼蚀刻剂、5％-35％的吡咯烷酮类溶剂、3％-15％的腐蚀抑制剂、0.1％-4％的不含金属离子的表面活性剂和水组成，各组分质量分数之和为100％；所述清洗剂的pH值为8-12。
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