CN107350641A - 激光加工装置 - Google Patents
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- 239000011148 porous material Substances 0.000 claims abstract description 18
- 230000004075 alteration Effects 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000011218 segmentation Effects 0.000 description 26
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
本发明提供一种激光加工装置,该激光加工装置能够形成盾构隧道,无需大的力量便能够对基板进行分割。激光加工装置的聚光器具有球面像差的功能。由于聚光器具有球面像差的功能,因此,能够根据所照射的激光光线的横截面的位置使聚光点位置在晶片的厚度方向上连续变化。由此,能够通过激光光线的一次的照射在从晶片的正面到背面的范围内形成由细孔和围绕该细孔的非晶质构成的均匀的盾构隧道。
Description
技术领域
本发明涉及激光加工装置,其对例如由硅、蓝宝石、碳化硅、氮化镓等制成的晶片实施激光加工。
背景技术
关于由交叉的多条分割预定线划分而在正面上形成有IC、LSI、LED、SAW器件、功率器件等多个器件的晶片,通过激光加工装置形成分割起点,并且被分割成各个器件芯片,器件芯片被利用于手机、个人电脑、照明设备等电子设备中(例如,参照专利文献1。)。
激光加工装置大致构成为包括:对被加工物进行保持的卡盘工作台;具有对保持在该卡盘工作台上的被加工物照射激光光线的聚光器的激光光线照射单元;以及对该卡盘工作台与该激光光线照射单元相对地进行加工进给的加工进给单元,激光加工装置能够实施如下的分割加工:沿着晶片的分割预定线高精度地照射激光光线,从而形成用于分割成各个器件芯片的分割起点。
作为形成该分割起点的激光加工装置,分为如该专利文献1所公开的照射对于被加工物具有吸收性的波长的激光光线来实施烧蚀加工的类型和将对于被加工物具有透过性的波长的激光光线的聚光点定位于被加工物的内部而进行照射从而形成改质层的类型(例如,参照专利文献2)。然而,在任意一个类型中,为了彻底切断晶片,都需要沿着分割预定线多次照射激光光线,存在生产率差的问题。
因此,本申请人开发了下述技术并已经进行了申请(例如,参照专利文献3。):按照形成晶片的材料的折射率来适当地设定聚光透镜的数值孔径,其中,该聚光透镜将对于作为被加工物的晶片具有透过性的激光光线进行会聚而进行照射,由此,形成从分割预定线的正面到背面的由细孔和围绕该细孔的非晶质构成的所谓的盾构隧道,沿着分割预定线形成该盾构隧道而成为分割起点。需要说明的是,在专利文献1~3所公开的技术中,作为配设在激光光线照射单元的聚光器中的聚光透镜,采用非球面透镜,以对凹凸面的形状进行调整或者由多片透镜的组合来构成等方式进行设定,以便将激光光线会聚到通过晶片上的被加工点的光轴上的1点。
专利文献1:日本特开平10-305420号公报
专利文献2:日本特许第3408805号公报
专利文献3:日本特开2014-221483号公报
然而,根据由该专利文献3所公开的激光加工装置所形成的以往的盾构隧道,虽然无需对同一加工点多次照射激光光线便能够形成脆弱的分割起点,但是,应对晶片的材料和厚度的变化并且沿着分割预定线形成期望的均匀的盾构隧道却并不容易。特别是,沿着分割预定线而形成的该盾构隧道的强度(=脆弱性)大大受到照射到晶片上的激光光线的功率的影响,因此,需要适当地调整激光光线的功率,以使所形成的盾构隧道沿着分割预定线成为规定的一定的强度。但是,在将聚光点设定到薄化后的晶片的内部的1点从而形成盾构隧道的情况下,难以在分割预定线的整体范围内形成均匀的盾构隧道,作为其结果,存在如下的问题:要想在形成盾构隧道之后通过施加外力来将基板分割成各个器件芯片,需要比较大的力量(例如为40N)。
发明内容
本发明是鉴于上述实情而完成的,其主要的技术课题在于提供一种激光加工装置,能够形成无需大的力量便能够对基板进行分割的盾构隧道。
根据本发明,提供一种激光加工装置,其中,该激光加工装置具有:卡盘工作台,其对晶片进行保持;激光光线照射单元,其对保持在该卡盘工作台上的晶片照射激光光线;以及加工进给机构,其对该卡盘工作台与该激光光线照射单元相对地进行加工进给,该激光光线照射单元具有:激光振荡器,其振荡出脉冲激光光线;以及聚光器,其对该激光振荡器振荡出的脉冲激光光线进行会聚而对保持在该卡盘工作台上的晶片进行照射,该聚光器具有如下的球面像差的功能:将由通过该聚光器的内侧的激光光线形成的聚光点的位置定位成从由通过该聚光器的外侧的激光光线形成的聚光点的位置向该卡盘工作台侧连续变化,通过对晶片照射聚光点位置根据激光光线的横截面位置而在晶片的厚度方向上连续变化的激光光线,在晶片的内部形成由细孔和围绕该细孔的非晶质构成的盾构隧道。
优选所述球面像差的功能是通过具有球面像差的聚光透镜来实现的。或者,所述球面像差的功能是通过聚光透镜和聚光点校正板来实现的,该聚光点校正板相对于该聚光透镜配置在卡盘工作台侧,对由该聚光透镜会聚的激光光线的聚光点位置进行校正。优选在所照射的激光光线的横截面之内,从由外侧的激光光线形成的聚光点到由内侧的激光光线形成的聚光点为止,聚光点所延伸的长度为50μm~2000μm。
根据本发明的激光加工装置,由于聚光器具有使所照射的激光光线的聚光点的位置在晶片的厚度方向上连续变化的球面像差的功能,因此,能够通过激光光线的一次照射在从晶片的正面到背面的范围内形成由细孔和围绕该细孔的非晶质构成的盾构隧道,因此,照射到晶片上的激光光线的能量能够被有效使用,形成良好的盾构隧道。因此,无需特别增大所照射的激光光线的输出便能够形成均匀的盾构隧道,能够使作为分割起点发挥作用的盾构隧道的强度降低,因此,能够以比以往弱的力量将晶片分割成各个器件芯片。
附图说明
图1是根据本发明构成的激光加工装置的整体立体图。
图2的(a)、(b)是用于对配设于图1所记载的激光加工装置中的激光光线照射单元的概略情况进行说明的示意图。
图3是用于对利用图2所示的激光光线照射单元形成盾构隧道时的聚光点位置进行说明的示意图。
图4的(a)是示出盾构隧道形成工序的立体图,图4的(b)是1个盾构隧道的示意性立体图,图4的(c)是在内部形成有多个盾构隧道的晶片的剖视图。
标号说明
10:晶片;12:分割预定线;14:器件;40:激光加工装置;41:基台;42:保持机构;43:移动单元;44:激光光线照射单元;44a:聚光器;44d、44e:聚光透镜;44g:聚光点校正板;45:拍摄单元;100:盾构隧道;102:细孔;104:非晶质。
具体实施方式
下面,参照附图对本发明实施方式的激光加工装置进行说明。
图1中示出本发明的激光加工装置40的整体立体图。激光加工装置40构成为,具有基台41、对该被加工物进行保持的保持机构42、使保持机构42移动的移动单元43、对保持在保持机构42上的被加工物照射激光光线的激光光线照射单元44、拍摄单元45以及由计算机构成的未图示的控制单元,通过控制单元对各单元进行控制。
保持机构42包括:在X方向上移动自如地搭载在基台41上的矩形的X方向可动板51;在Y方向上移动自如地搭载在X方向可动板51上的矩形的Y方向可动板53;固定在Y方向可动板53的上表面上的圆筒状的支柱50;以及固定在支柱50的上端的矩形的罩板52。在罩板52上形成有在Y方向上延伸的长孔52a。在通过长孔52a向上方延伸的作为对圆形的被加工物进行保持的保持单元的卡盘工作台54的上表面上配置有由多孔性材料形成并且实质上水平延伸的圆形的吸附卡盘56。吸附卡盘56借助通过支柱50的流路而与未图示的吸引单元连接。在卡盘工作台54的周缘,在周向上隔开间隔地配置有多个夹具58。需要说明的是,X方向是图1中箭头X所示的方向,Y方向是图1中箭头Y所示的方向并且是与X方向垂直的方向。X方向、Y方向所规定的平面是实质上水平的。
移动单元43包括X方向移动单元60、Y方向移动单元65以及未图示的旋转单元。X方向移动单元60具有在基台41上沿X方向延伸的滚珠丝杠60b和与滚珠丝杠60b的一端部连结的电动机60a。滚珠丝杠60b的未图示的螺母部被固定在X方向可动板51的下表面上。并且,X方向移动单元60利用滚珠丝杠60b将电动机60a的旋转运动转换成直线运动并传递到X方向可动板51,使X方向可动板51沿着基台41上的导轨43a在X方向上进退。Y方向移动单元65具有在X方向可动板51上沿Y方向延伸的滚珠丝杠65b和与滚珠丝杠65b的一端部连结的电动机65a。滚珠丝杠65b的未图示的螺母部固定在Y方向可动板53的下表面上。并且,Y方向移动单元65利用滚珠丝杠65b将电动机65a的旋转运动转换成直线运动并传递到Y方向可动板53,使Y方向可动板53沿着X方向可动板51上的导轨51a在Y方向上进退。旋转单元内置于支柱50,使吸附卡盘56相对于支柱50旋转。
激光光线照射单元44内置于从基台41的上表面向上方延伸然后实质上水平延伸的壳体46。如图2的(a)中用框图表示的其概略情况所示,本实施方式的激光光线照射单元44包括:激光振荡器44b,其振荡出用于沿着作为被加工物的晶片10的分割预定线形成由细孔和围绕该细孔的非晶质构成的盾构隧道的波长(例如为1030nm)的激光光线;衰减器44c,其用于对从激光振荡器44b振荡出的激光光线的输出进行调整;以及反射板44f,其使被衰减器44c调整了输出的激光光线LB朝向具有聚光透镜44d的聚光器44a反射。
本实施方式中的激光加工装置40具有未图示的控制单元,该控制单元由计算机构成,并具有:中央运算处理器(CPU),其根据控制程序来进行运算处理;只读存储器(ROM),其对控制程序等进行储存;能够读写的随机存取存储器(RAM),其用于对检测出的检测值、运算结果等进行暂时储存;以及输入接口和输出接口。对于该控制单元的输入接口,除了来自拍摄单元45的图像信号以外,还输入来自保持机构42的未图示的X方向、Y方向的位置检测单元的信号等。此外,从该输出接口朝向激光振荡器44b、X方向移动单元60、Y方向移动单元65等发送动作信号。
拍摄单元45附设在壳体46的前端下表面上,位于导轨43a的上方,通过使卡盘工作台54沿着导轨43a移动而能够对载置在卡盘工作台54上的被加工物进行拍摄。需要说明的是,本实施方式的拍摄单元45由利用可视光线进行拍摄的未图示的拍摄元件(CCD)构成,但是除此之外,也可以具有用于对被加工物照射红外线的红外线光源和输出与红外线相对应的电信号的红外线用拍摄元件(红外线CCD)。
此处,也参照图3对本发明的聚光器44a进行进一步说明。聚光器44a至少具有聚光透镜44d,根据本发明的技术思想,该聚光透镜44d具有如下的球面像差的功能:将由通过了该聚光透镜44d的内侧的激光光线LB1在聚光透镜44d的光轴上形成的聚光点P1的位置定位成从由通过了外侧的激光光线LBn在光轴上形成的聚光点Pn的位置向卡盘工作台54侧延伸。由一般公知的球面透镜构成便能够实现该球面像差的功能,但是本发明未必限定于此,也可以由非球面透镜、或者多个球面、非球面透镜的组合来构成,只要在晶片10的内部能够将该聚光点P1~Pn定位成在激光光线入射的方向上延伸,可以是任意的结构。另外,优选聚光点位置从该聚光点P1到Pn变化的长度设定在50μm~2000μm之间。无需一定将该长度设定成比作为被加工物的晶片10的厚度大,但是,例如在晶片10的厚度为300μm的情况下,通过进行设定以使聚光点P1~Pn在从正面到背面的整体、即在300μm的范围内延伸,能够更加良好地形成盾构隧道。
参照附图,对基于本发明构成的激光加工装置40的作用依次进行说明。首先,准备在由形成为格子状的多条分割预定线12划分出的各区域中形成有SAW器件14并借助粘接带T保持于环状的框架Fd的晶片10,该晶片10由钽酸锂(LiTaO3)构成。
在卡盘工作台54的吸附卡盘56上,使粘接带T侧朝下而载置该晶片10,利用夹具58对该环状的框架F进行保持,并且,使未图示的吸引单元进行动作而使负压作用于吸附卡盘56从而对晶片10进行吸引保持。
在吸附卡盘56上吸引保持了晶片10之后,使X方向移动单元60、Y方向移动单元65进行动作,使卡盘工作台54移动而将晶片10定位于拍摄单元45的正下方。当卡盘工作台54被定位于拍摄单元45的正下方时,通过拍摄单元45和未图示的控制单元来执行对晶片10的待激光加工区域进行检测的对准工序。即,拍摄单元45和未图示的控制单元执行图案匹配等图像处理而进行激光光线照射位置的对准,其中,该图案匹配等图像处理用于进行形成在晶片10的规定的方向上的分割预定线12与沿着分割预定线12照射激光光线的激光光线照射单元44的聚光器44a的对位。需要说明的是,沿着形成在与该规定的方向垂直的方向上的分割预定线12也执行同样的对准工序。
在实施了上述的对准工序之后,将卡盘工作台54移动至聚光器44a所处的激光光线照射区域,并将形成在第1方向上的分割预定线12的一端定位于聚光器44a的正下方。然后,使未图示的聚光点位置调整单元进行动作而使聚光器44a在光轴方向上移动,将聚光点定位于构成晶片10的钽酸锂基板的内部的规定的位置。此时,以下述方式进行设定:将由通过聚光透镜44d的最内侧的激光光线LB1形成的聚光点P1的位置定位于晶片10的内部而且定位于晶片10的卡盘工作台54侧即背面附近,将由通过聚光透镜44d的最外侧的激光光线LBn形成的聚光点Pn的位置定位于晶片10的形成有器件的正面侧。由此,由通过聚光器44a的聚光透镜44d的激光光线LB形成的聚光点从晶片10的背面延伸到正面。需要说明的是,在图3和图4的(c)中,出于方便起见,将激光光线LB分解成LB1~LBn并将聚光点P分解成P1~Pn进行说明,实际上,并不能以这样分解的状态观察到。
在进行了上述聚光点的定位之后,如图4的(a)所示,使激光光线照射单元44进行动作,从激光光线振荡器44b振荡出在晶片10内形成盾构隧道100的脉冲激光光线。从激光光线振荡器44b振荡出的脉冲激光光线LB被引导至衰减器44c,通过衰减器44c的作用将其输出调整成规定的值,被聚光器44a会聚而照射到晶片10的分割预定线12的一端部。当开始进行激光光线LB的照射时,使X方向移动单元60进行动作而使卡盘工作台54在图4的箭头X所示的方向上移动,由此,该激光光线LB沿着分割预定线12照射。由此,沿着分割预定线12连续地形成如图4的(b)所示由在上下方向上延伸的细孔102和对该细孔进行盾构的非晶质104构成的盾构隧道100(参照图4的(c))。使该激光光线照射单元44以及卡盘工作台54、X方向移动单元60、Y方向移动单元65进行动作,沿着在晶片10的正面上形成为格子状的全部的分割预定线12形成该盾构隧道100。在通过这样完成了盾构隧道形成工序之后,输送到对晶片10施加外力而分离成各个器件14的分离工序。需要说明的是,关于该分离工序,其不构成本发明的主要部分,并且能够使用公知的分离单元(例如,参照上述专利文献3的图8及其说明),因此,省略其详细说明。
上述盾构隧道形成工序中的加工条件例如以如下方式设定。
波长:1030nm
平均输出:3W
重复频率:50kHz
脉冲宽度:10ps
光斑直径:
聚光透镜的数值孔径/晶片的折射率:0.05~0.20
X方向加工进给速度:500mm/秒
盾构隧道尺寸:的细孔、的非晶质
如上所述,本实施方式的激光加工装置中的聚光器具有如下的球面像差的功能:将由通过聚光器的内侧的激光光线形成的聚光点的位置定位成从由通过外侧的激光光线形成的聚光点的位置向卡盘工作台侧延伸,将由通过该聚光器的内侧的激光光线形成的聚光点定位于晶片的内部,形成由细孔和围绕该细孔的非晶质构成的盾构隧道。由此,激光光线的能量被有效地使用于盾构隧道的形成,因此,能够在分割预定线的整体范围内形成良好的盾构隧道。而且,形成有该盾构隧道的分割预定线在整体范围内足够脆弱,因此,能够在该分离工序中通过比较小的外力分割成各个器件。
需要说明的是,在本实施方式中,使配设于聚光器44a的聚光透镜44d具有球面像差的功能,该球面像差的功能将由通过该聚光器44a的内侧的激光光线LB1形成的聚光点P1的位置定位成从由通过外侧的激光光线LBn形成的聚光点Pn的位置向该卡盘工作台54侧延伸,但是,本发明不限于此。例如,如图2的(b)所示,可以在配设于聚光器44a′的聚光透镜44e的靠卡盘工作台54侧的位置配设聚光点校正板44g。该聚光透镜44e以使聚光点形成在晶片10内部的1点的方式形成其透镜面,与之相对地,该聚光点校正板44g配设在聚光透镜44e与晶片10之间,具有如下的功能:对通过了聚光透镜44e的激光光线进行校正,以使由通过内侧的激光光线形成的聚光点的位置从由通过外侧的激光光线形成的聚光点的位置向该卡盘工作台54侧延伸。
对于聚光点校正板44a,为了使其具有上述功能,例如,能够通过利用玻璃材料形成聚光点校正板44g并将激光光线所入射的面形成为作为球面形状的凸面来实现。通过将这样的聚光点校正板44g配设到上述位置,由此,通过了聚光透镜44e的激光光线LB中的内侧和外侧的行进方向因通过聚光点校正板44g而被校正,使由通过聚光器44a′的内侧的激光光线形成的聚光点的位置从由通过外侧的激光光线形成的聚光点的位置向该卡盘工作台54侧延伸。并且,将由通过聚光器的内侧的激光光线产生的聚光点定位于晶片的内部从而形成盾构隧道。结果为,与前述实施方式相同地,激光光线的能量被有效地使用于盾构隧道的形成,在分割预定线的整体范围内形成良好的盾构隧道。
需要说明的是,在本发明中,所谓“具有球面像差的功能”并非仅意味着产生因由完整的球面形状构成的凸透镜而得到的像差的情况。总而言之,包括起到下述功能的全部情况:将由通过该聚光器的内侧的激光光线形成的聚光点的位置定位成从由通过外侧的激光光线形成的聚光点的位置向卡盘工作台侧延伸。并且,在上述实施方式中,示出了从形成有SAW器件的正面侧照射激光光线的例子,但是,本发明并不限定于此,也可以构成为把正面和背面反转而从晶片的背面侧照射激光光线。
Claims (4)
1.一种激光加工装置,其中,
该激光加工装置具有:
卡盘工作台,其对晶片进行保持;
激光光线照射单元,其对保持在该卡盘工作台上的晶片照射激光光线;以及
加工进给机构,其对该卡盘工作台与该激光光线照射单元相对地进行加工进给,
该激光光线照射单元具有:
激光振荡器,其振荡出脉冲激光光线;以及
聚光器,其对该激光振荡器振荡出的脉冲激光光线进行会聚而对保持在该卡盘工作台上的晶片进行照射,
该聚光器具有如下的球面像差的功能:将由通过该聚光器的内侧的激光光线形成的聚光点的位置定位成从由通过该聚光器的外侧的激光光线形成的聚光点的位置向该卡盘工作台侧连续变化,
通过对晶片照射聚光点位置根据激光光线的横截面位置而在晶片的厚度方向上连续变化的激光光线,在晶片的内部形成由细孔和围绕该细孔的非晶质构成的盾构隧道。
2.根据权利要求1所述的激光加工装置,其中,
所述球面像差的功能是通过具有球面像差的聚光透镜来实现的。
3.根据权利要求1所述的激光加工装置,其中,
所述球面像差的功能是通过聚光透镜和聚光点校正板来实现的,该聚光点校正板相对于该聚光透镜配置在卡盘工作台侧,对由该聚光透镜会聚的激光光线的聚光点位置进行校正。
4.根据权利要求1所述的激光加工装置,其中,
在该激光光线的横截面之内,从由外侧的激光光线形成的聚光点到由内侧的激光光线形成的聚光点为止,聚光点所延伸的长度为50μm~2000μm。
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