CN107293349B - 导电糊料组合物和用其制成的半导体装置 - Google Patents
导电糊料组合物和用其制成的半导体装置 Download PDFInfo
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- CN107293349B CN107293349B CN201710239818.2A CN201710239818A CN107293349B CN 107293349 B CN107293349 B CN 107293349B CN 201710239818 A CN201710239818 A CN 201710239818A CN 107293349 B CN107293349 B CN 107293349B
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- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
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- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- SCABKEBYDRTODC-UHFFFAOYSA-N bis[2-(2-butoxyethoxy)ethyl] hexanedioate Chemical compound CCCCOCCOCCOC(=O)CCCCC(=O)OCCOCCOCCCC SCABKEBYDRTODC-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 238000000354 decomposition reaction Methods 0.000 description 1
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- 230000001627 detrimental effect Effects 0.000 description 1
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 description 1
- FSCIDASGDAWVED-UHFFFAOYSA-N dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC FSCIDASGDAWVED-UHFFFAOYSA-N 0.000 description 1
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
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- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
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- 239000003350 kerosene Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
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- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- OJURWUUOVGOHJZ-UHFFFAOYSA-N methyl 2-[(2-acetyloxyphenyl)methyl-[2-[(2-acetyloxyphenyl)methyl-(2-methoxy-2-oxoethyl)amino]ethyl]amino]acetate Chemical compound C=1C=CC=C(OC(C)=O)C=1CN(CC(=O)OC)CCN(CC(=O)OC)CC1=CC=CC=C1OC(C)=O OJURWUUOVGOHJZ-UHFFFAOYSA-N 0.000 description 1
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 150000002942 palmitic acid derivatives Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 150000003904 phospholipids Chemical class 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- 229920000573 polyethylene Polymers 0.000 description 1
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- 239000011591 potassium Substances 0.000 description 1
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- 230000000171 quenching effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 description 1
- 229910000161 silver phosphate Inorganic materials 0.000 description 1
- KZJPVUDYAMEDRM-UHFFFAOYSA-M silver;2,2,2-trifluoroacetate Chemical compound [Ag+].[O-]C(=O)C(F)(F)F KZJPVUDYAMEDRM-UHFFFAOYSA-M 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical class [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
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- H—ELECTRICITY
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
氧化物 | 量(wt%) |
Bi<sub>2</sub>O<sub>3</sub> | 46.1 |
SiO<sub>2</sub> | 27.7 |
ZnO | 13.8 |
Al<sub>2</sub>O<sub>3</sub> | 4.6 |
CaO | 3.7 |
MgO | 4.1 |
氧化物 | 量(wt%) |
PbO | 43.2 |
B<sub>2</sub>O<sub>3</sub> | 0.5 |
Na<sub>2</sub>O | 0.5 |
Bi<sub>2</sub>O<sub>3</sub> | 7.0 |
TeO<sub>2</sub> | 46.3 |
Li<sub>2</sub>O | 0.5 |
Cr<sub>2</sub>O<sub>3</sub> | 2.1 |
氧化物 | 量(wt%) |
Bi<sub>2</sub>O<sub>3</sub> | 73.2 |
SiO<sub>2</sub> | 1.9 |
ZnO | 13.5 |
Al<sub>2</sub>O<sub>3</sub> | 0.6 |
BaO | 2.6 |
B<sub>2</sub>O<sub>3</sub> | 8.2 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10134925B2 (en) * | 2016-04-13 | 2018-11-20 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
CN105845198B (zh) * | 2016-05-16 | 2017-09-12 | 南通天盛新能源股份有限公司 | 掺杂改性石墨烯的太阳能电池正面银浆及其制备方法 |
KR20190005463A (ko) * | 2017-07-06 | 2019-01-16 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
RU2667937C1 (ru) * | 2018-01-09 | 2018-09-25 | Юлия Алексеевна Щепочкина | Глазурь |
JP6966950B2 (ja) * | 2018-01-23 | 2021-11-17 | Agc株式会社 | ガラス、ガラスの製造方法、導電ペーストおよび太陽電池 |
WO2019183931A1 (zh) * | 2018-03-30 | 2019-10-03 | 深圳市首骋新材料科技有限公司 | 晶硅太阳能电池正面导电浆料及其制备方法和太阳能电池 |
GB201806411D0 (en) | 2018-04-19 | 2018-06-06 | Johnson Matthey Plc | Kit, particle mixture, paste and methods |
US11538956B2 (en) * | 2018-04-27 | 2022-12-27 | Illinois Tool Works Inc. | Methods and apparatus to control zone temperatures of a solar cell production system |
GB201812052D0 (en) * | 2018-07-24 | 2018-09-05 | Johnson Matthey Plc | Particle mixture, kit, ink, methods and article |
CN109813635B (zh) * | 2019-01-01 | 2021-04-30 | 中国人民解放军63653部队 | 基于电场贯穿扩散法测定核素在岩土介质中扩散系数的装置 |
JP7220299B2 (ja) * | 2019-02-27 | 2023-02-09 | フエロ コーポレーション | 高q値を有するltcc誘電体組成物及び装置 |
TWI697015B (zh) * | 2019-03-05 | 2020-06-21 | 南韓商大州電子材料股份有限公司 | 太陽能電池前電極用糊劑組合物及其製備方法 |
KR102342518B1 (ko) * | 2019-12-31 | 2021-12-23 | 엘에스니꼬동제련 주식회사 | 태양전지 전극용 도전성 페이스트 조성물 및 이를 사용하여 제조된 전극을 포함하는 태양전지 |
CN111415766B (zh) * | 2020-03-30 | 2021-11-23 | 成都银盛新材料有限公司 | 太阳能电池正面电极用导电浆料及制备方法、应用 |
CN111848147B (zh) * | 2020-07-17 | 2022-09-06 | 苏州天源磁业股份有限公司 | 一种NiCuZn铁氧体组合物及其制备方法和应用 |
CN116864181B (zh) * | 2023-08-14 | 2024-01-23 | 苏州国绿新材料科技有限公司 | 一种用于太阳能电池的导电银浆及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1308342A (zh) * | 2000-02-09 | 2001-08-15 | 株式会社村田制作所 | 导电涂胶和利用导电涂胶的陶瓷电子器件 |
CN103021511A (zh) * | 2011-09-22 | 2013-04-03 | 比亚迪股份有限公司 | 一种晶体硅太阳能电池正面电极银浆及其制备方法 |
CN103547542A (zh) * | 2011-03-24 | 2014-01-29 | E.I.内穆尔杜邦公司 | 导电糊料组合物及由其制成的半导体器件 |
CN103915129A (zh) * | 2012-12-29 | 2014-07-09 | 第一毛织株式会社 | 用于太阳能电池电极的组合物和使用其制作的电极 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06349314A (ja) | 1993-06-03 | 1994-12-22 | Murata Mfg Co Ltd | 導電性ペースト |
JPH0859295A (ja) * | 1994-08-22 | 1996-03-05 | Nippon Electric Glass Co Ltd | 低融点封着用組成物 |
JPH0952732A (ja) * | 1995-08-17 | 1997-02-25 | Nippon Electric Glass Co Ltd | 低融点ガラス及び低融点封着用組成物 |
DE10049022B4 (de) | 1999-10-04 | 2010-10-14 | Murata Mfg. Co., Ltd., Nagaokakyo-shi | Verfahren und Vorrichtung zur Messung der Viskosität von Grünlingen sowie computerlesbares Aufzeichnungsmedium für die Speicherung des Verfahren zur Messung der Viskosität von Grünlingen |
JP4742542B2 (ja) | 2004-09-02 | 2011-08-10 | 株式会社ニコン | 撮像装置 |
US7494607B2 (en) | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
JP5291008B2 (ja) | 2008-02-13 | 2013-09-18 | 新日鉄住金化学株式会社 | 回路配線基板の製造方法 |
US8231934B2 (en) | 2008-11-26 | 2012-07-31 | E. I. Du Pont De Nemours And Company | Conductive paste for solar cell electrode |
WO2010117788A1 (en) | 2009-03-30 | 2010-10-14 | E. I. Du Pont De Nemours And Company | Metal pastes and use thereof in the production of silicon solar cells |
WO2010123967A2 (en) | 2009-04-22 | 2010-10-28 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
WO2011016855A1 (en) | 2009-08-04 | 2011-02-10 | Gentex Corporation | Cathodic materials for use in electrochemical sensors and associated devices and methods of manufacturing the same |
US20110143497A1 (en) | 2009-12-16 | 2011-06-16 | E. I. Du Pont De Nemours And Company | Thick film conductive composition used in conductors for photovoltaic cells |
KR101246686B1 (ko) | 2010-03-19 | 2013-03-21 | 제일모직주식회사 | 태양전지 전극용 페이스트 및 이를 이용한 태양전지 |
WO2011140197A1 (en) | 2010-05-04 | 2011-11-10 | E. I. Du Pont De Nemours And Company | Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices |
KR20120078109A (ko) | 2010-12-31 | 2012-07-10 | 엘지이노텍 주식회사 | 태양 전지의 전극용 페이스트 조성물 및 태양 전지 |
US8808581B2 (en) | 2011-08-15 | 2014-08-19 | E I Du Pont De Nemours And Company | Conductive compositions containing Li2RuO3 and ion-exchanged Li2RuO3 and their use in the manufacture of semiconductor devices |
KR101896740B1 (ko) | 2011-09-09 | 2018-09-07 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 은 태양 전지 접점 |
KR101350960B1 (ko) | 2012-01-13 | 2014-01-16 | 한화케미칼 주식회사 | 글래스 프릿, 이를 포함하는 도전성 페이스트 조성물 및 태양전지 |
ES2703905T3 (es) | 2012-04-17 | 2019-03-13 | Heraeus Precious Metals North America Conshohocken Llc | Pasta para una película gruesa, conductora para contactos de células solares |
EP2654087B1 (en) | 2012-04-17 | 2018-02-14 | Heraeus Precious Metals North America Conshohocken LLC | Tellurium inorganic reaction systems for conductive thick film paste for solar cell contacts |
TWI518709B (zh) | 2012-09-13 | 2016-01-21 | 達泰科技股份有限公司 | 包含細化玻璃顆粒之銀漿及其用於製造光伏元件之用途 |
EP2749545B1 (en) | 2012-12-28 | 2018-10-03 | Heraeus Deutschland GmbH & Co. KG | Binary glass frits used in N-Type solar cell production |
KR20140092488A (ko) * | 2012-12-29 | 2014-07-24 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
TWI493729B (zh) | 2013-02-08 | 2015-07-21 | Giga Solar Materials Corp | 用於太陽能電池正面電極之導電漿及其製造方法 |
US20160284889A1 (en) | 2013-03-29 | 2016-09-29 | Shoei Chemical Inc. | Conductive paste for solar cell element surface electrodes and method for manufacturing solar cell element |
KR101608123B1 (ko) | 2013-09-13 | 2016-03-31 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
CN104575661B (zh) * | 2013-10-25 | 2017-09-12 | 硕禾电子材料股份有限公司 | 一种导电浆及其制造方法 |
KR101659131B1 (ko) | 2013-11-12 | 2016-09-22 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
JP6046753B2 (ja) | 2014-01-17 | 2016-12-21 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 改良された接着特性を有する鉛−ビスマス−テルル−ケイ酸塩無機反応系 |
JP2015187063A (ja) | 2014-01-17 | 2015-10-29 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 導電性ペースト組成物のための鉛−ビスマス−テルル無機反応系 |
US20150206992A1 (en) | 2014-01-17 | 2015-07-23 | Heraeus Precious Metals North America Conshohocken Llc | Lead-tellurium inorganic reaction systems |
CN105939976A (zh) | 2014-01-28 | 2016-09-14 | 东进世美肯株式会社 | 玻璃组合物和使用该玻璃组合物的太阳能电池用电极组合物 |
EP2913313A1 (en) | 2014-02-26 | 2015-09-02 | Heraeus Precious Metals North America Conshohocken LLC | Tungsten-containing glass frit for electroconductive paste composition |
US9761348B2 (en) * | 2014-03-10 | 2017-09-12 | E I Du Pont De Nemours And Company | Conductive paste used for solar cell electrodes |
GB201407418D0 (en) | 2014-04-28 | 2014-06-11 | Johnson Matthey Plc | Conductive paste, electrode and solar cell |
KR101721731B1 (ko) | 2014-07-11 | 2017-03-31 | 삼성에스디아이 주식회사 | 태양전지 전극용 페이스트 및 이로부터 제조된 전극 |
EP3040320A1 (en) | 2014-12-31 | 2016-07-06 | Heraeus Precious Metals North America Conshohocken LLC | Glass composition for electroconductive paste compositions |
JP6531421B2 (ja) | 2015-02-19 | 2019-06-19 | セントラル硝子株式会社 | Bi2O3−TeO2−SiO2−WO3−RO系ガラス |
CN106297948A (zh) | 2015-05-11 | 2017-01-04 | 致嘉科技股份有限公司 | 用于太阳能电池工艺的导电浆料 |
JP6580383B2 (ja) | 2015-06-17 | 2019-09-25 | ナミックス株式会社 | 導電性ペースト、太陽電池及び太陽電池の製造方法 |
US20170144920A1 (en) | 2015-11-20 | 2017-05-25 | Giga Solar Materials Corp. | Crystalline oxides, preparation thereof and conductive pastes containing the same |
US10134925B2 (en) * | 2016-04-13 | 2018-11-20 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
CN106007390B (zh) | 2016-05-13 | 2019-01-11 | 浙江光达电子科技有限公司 | 硅太阳能电池正面银浆用无铅玻璃组合物及其制备方法 |
CN106477897A (zh) | 2016-09-20 | 2017-03-08 | 康准电子科技(昆山)有限公司 | 玻璃粉及应用该玻璃粉制得的正电极银浆、太阳能电池 |
-
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- 2017-03-17 US US15/462,053 patent/US10134925B2/en active Active
- 2017-04-11 JP JP2017078281A patent/JP6916030B2/ja active Active
- 2017-04-13 CN CN201710239818.2A patent/CN107293349B/zh active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1308342A (zh) * | 2000-02-09 | 2001-08-15 | 株式会社村田制作所 | 导电涂胶和利用导电涂胶的陶瓷电子器件 |
CN103547542A (zh) * | 2011-03-24 | 2014-01-29 | E.I.内穆尔杜邦公司 | 导电糊料组合物及由其制成的半导体器件 |
CN103021511A (zh) * | 2011-09-22 | 2013-04-03 | 比亚迪股份有限公司 | 一种晶体硅太阳能电池正面电极银浆及其制备方法 |
CN103915129A (zh) * | 2012-12-29 | 2014-07-09 | 第一毛织株式会社 | 用于太阳能电池电极的组合物和使用其制作的电极 |
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