CN107134432B - 一种阵列基板制程 - Google Patents
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Abstract
本发明提供了一种阵列基板制程,包括:在一基板上形成一第一金属层,蚀刻第一金属层;沉积一绝缘层与基板及所述第一金属层上;于绝缘层上,沉积一主动层以及以欧姆接触层;蚀刻主动层及欧姆接触层;于欧姆接触层以及绝缘层上沉积一第二金属层,并蚀刻第二金属层;于第二金属层以及绝缘层上沉积一保护层;于保护层上沉积一光阻层并进行曝光及显影;于彩色光阻层上直接沉积一透明导电层,并蚀刻所述透明导电层,以形成像素电极层。本发明的阵列基板制程通过简化其结构以及生产流程,提高了生产线的效率与产能;并可节省生产设备以及掩膜板费用,降低生产成本。
Description
技术领域
本发明属于显示屏技术领域,尤其涉及一种阵列基板制程。
背景技术
越来越多的液晶面板需要使用在薄膜晶体管(Thin-film transistor,简称TFT)的阵列上制作彩色滤光膜(Color Filter on Array,简称COA)的工艺来提升液晶面板曲面画质或藉此简化上板的结构(例如:简化平面转换(In-Plane Switching,简称IPS)液晶模式上板的平坦化层(Over Coat,简称OC)结构)。
传统COA结构的液晶面板的阵列制程(Array)工艺流程如下:传统COA结构在栅极与源极制程完成之后,先进行第一绝缘层的成型工序;而后再完成彩色光阻层C包括红色光阻、绿色光阻以及蓝色光阻)的涂布、曝光与显影步骤;如果是搭配了白、红、绿以及蓝四色(white,red,green,blue,简称WRGB)技术的液晶面板,则还需要进行透明光阻层的涂布、曝光与显影步骤。彩色光阻层或透明光阻层结构完成之后再进行第二绝缘层的成型工序,然后涂布光刻胶层(也叫光阻),并利用带有通孔的掩膜板进行曝光操作,之后再显影与蚀刻以除去对应于通孔处的位于阵列上方的第一绝缘层以及第二绝缘层,后续再除去光刻胶层以接续后面的像素电极(Pixel Electrode,简称PE)制程。
薄膜晶体管液晶显示器产业由于工艺复杂且设备投资巨大,所以生产的成本很高,随着市场的激烈竞争,降低显示屏的生产成本已是平板显示行业必然的发展方向。因此,需要研发一种新的显示面板的生产技术,以进一步降低生产成本,提高生产效率。
发明内容
本发明所要解决的技术问题在于提供一种阵列基板制程,旨在进一步降低显示面板的生产成本,提高生产效率。
本发明是这样实现的,一种阵列基板的制程,包括以下步骤:
在一基板上形成一第一金属层,蚀刻所述第一金属层,以形成晶体管的栅极;
沉积一绝缘层于所述基板及所述栅极上;
于所述绝缘层上,沉积一主动层及欧姆接触层;
蚀刻所述主动层及欧姆接触层,以形成所述晶体管的通道;
于所述欧姆接触层以及所述绝缘层上沉积一第二金属层,并蚀刻所述第二金属层以形成所述晶体管的源极与漏极;
于所述第二金属层以及所述绝缘层上沉积一保护层;
于所述保护层上沉积一彩色光阻层并进行曝光及显影;
于所述彩色光阻层上直接沉积一透明导电层,并蚀刻所述透明导电层,以形成像素电极层,其中所述彩色光阻层是直接接觸所述透明导电层。
进一步地,所述在一玻璃基板上形成一金属层,蚀刻所述第一金属层,以形成晶体管栅极的具体步骤包括:
基板清洗,去除异物;
成膜工艺,在干净的基板表面,通过溅射沉积形成金属薄膜;
上光阻,在已形成的金属薄膜上面均匀涂覆一层光刻胶;
曝光,紫外线透过掩模板照射基板上的光刻胶,进行曝光;
显影,光刻胶曝光部分被显影液溶解,留下部分图案呈现所需形状;
蚀刻,把基板放入对应腐蚀液或腐蚀气体中,腐蚀掉无光刻胶覆盖的薄膜;
去光阻,去除残余的光刻胶,留下所需形状的金属薄膜,以形成扫描线、晶体管的栅极以及共通电极。
进一步地,所述于所述欧姆接触层以及所述绝缘层上沉积一第二金属层,并蚀刻所述第二金属层以形成所述晶体管的源极与漏极的步骤具体包括:
成膜工艺,在干净的基板表面,通过溅射沉积形成金属薄膜;
上光阻,在已形成的金属薄膜上面均匀涂覆一层光刻胶;
曝光,紫外线透过掩模板照射基板上的光刻胶,进行曝光;
显影,光刻胶曝光部分被显影液溶解,留下部分图案呈现所需形状;
蚀刻,把基板放入对应腐蚀液或腐蚀气体中,腐蚀掉无光刻胶覆盖的薄膜;
去光阻,去除残余的光刻胶,留下所需形状的金属薄膜,以形成数据线、并于欧姆接触层上定义出晶体管的源极及漏极。
进一步地,于所述保护层上沉积一彩色光阻层并进行曝光及显影的步骤具体为:
在所述保护层上涂覆一层感光的第一有机感光层,掩模曝光、显影,形成与像素对应的第一滤光层;
在所述保护层上涂覆一层感光的第二有机感光层,掩模曝光、显影,形成与像素对应的第二滤光层;
在所述保护层上涂覆一层感光的第三有机感光层,掩模曝光、显影,形成与像素对应的第三滤光层。
进一步地,于所述保护层上沉积一彩色光阻层并进行曝光及显影的步骤具体为:
在所述保护层上涂覆一层感光的透明有机感光层,掩模曝光、显影,形成与像素对应的透明滤光层。
本发明的的阵列基板制程,在光阻层的涂布、曝光以及显影后,不再进行第二层绝缘层的成膜操作,也不需要光刻胶层的曝光、显影以及除去等操作,而是直接以已经成型的彩色光阻层作为屏蔽直接进行蚀刻以除去绝缘层及保护层上与掩膜板通孔对应的区域,再接续后面的像素电极制程。可见,本发明的阵列基板制程通过简化其结构以及生产流程,提高了生产线的效率与产能;并可节省生产设备以及掩膜板费用,降低生产成本。
附图说明
一个或多个实施例通过与之对应的附图中的图片进行示例性说明,这些示例性说明并不构成对实施例的限定,附图中具有相同参考数字标号的元件表示为类似的元件,除非有特别申明,附图中的图不构成比例限制。
图1是是本发明实施例提供的一种阵列基板制程的工艺流程步骤示意图;
图2是本发明实施例提供的一种阵列基板制程的流程图;
图3本发明实施例提供的一种阵列基板的纵向截面图。
具体实施方式
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
如图1及图2所示,为本发明的一实施例,提供了一种阵列基板的制程,包括以下步骤:
步骤S100,在一基板100上形成一第一金属层,蚀刻所述第一金属层,以形成TFT的栅极1;
步骤S200,沉积一绝缘层2于所述基板100及所述栅极1上;
步骤S300,于所述绝缘层2上,沉积一主动层3以及欧姆接触层4;
步骤S400,蚀刻所述主动层3及欧姆接触层4,以形成所述TFT的通道;
步骤S500,于所述欧姆接触层4以及所述绝缘层2上沉积一第二金属层,并蚀刻所述第二金属层以形成所述TFT的源极与漏极5;
步骤S600,于所述第二金属层以及所述绝缘层2上沉积一保护层6;
步骤S700,于所述保护层6上沉积一彩色光阻层C并进行曝光及显影;
步骤S800,于所述彩色光阻层C上直接沉积一透明导电层,并蚀刻所述透明导电层,以形成像素电极层,其中所述彩色光阻层C是直接接觸所述透明导电层。
可选地,在所述步骤S100中,在一基板100上形成一金属层,蚀刻所述第一金属层,以形成TFT栅极1的具体步骤包括:
基板100清洗,去除异物;
成膜工艺,在干净的基板100表面,通过溅射沉积形成金属薄膜;
上光阻,在已形成的金属薄膜上面均匀涂覆一层光刻胶;
曝光,紫外线透过掩模板照射基板上的光刻胶,进行曝光;
显影,光刻胶曝光部分被显影液溶解,留下部分图案呈现所需形状;
蚀刻,把基板放入对应腐蚀液或腐蚀气体中,腐蚀掉无光刻胶覆盖的薄膜;
去光阻,去除残余的光刻胶,留下所需形状的金属薄膜,以形成扫描线、TFT的栅极1以及共通电极。
进一步地,在步骤S500中,于所述欧姆接触层4以及所述绝缘层2上沉积一第二金属层,并蚀刻所述第二金属层以形成所述TFT的源极与漏极5的步骤具体包括:
成膜工艺,在干净的玻璃表面,通过溅射沉积形成金属薄膜;
上光阻,在已形成的金属薄膜上面均匀涂覆一层光刻胶;
曝光,紫外线透过掩模板照射基板上的光刻胶,进行曝光;
显影,光刻胶曝光部分被显影液溶解,留下部分图案呈现所需形状;
蚀刻,把基板100放入对应腐蚀液或腐蚀气体中,腐蚀掉无光刻胶覆盖的薄膜;
去光阻,去除残余的光刻胶,留下所需形状的金属薄膜,以形成数据线、并于欧姆接触层上定义出TFT的源极及漏极5。
更进一步地,在所述步骤S700中,于所述保护层6上沉积一彩色光阻层C并进行曝光及显影的步骤具体包括:
在所述保护层6上涂覆一层感光的第一有机感光层,掩模曝光、显影,形成与像素对应的第一滤光层;
在所述保护层6上涂覆一层感光的第二有机感光层,掩模曝光、显影,形成与像素对应的第二滤光层;
在所述保护层6上涂覆一层感光的第三有机感光层,掩模曝光、显影,形成与像素对应的第三滤光层。
本实施例中,上述步骤中提及的第一有机感光层为红色有机感光层、第二有机感光层为绿色有机感光层、第三有机感光层为蓝色有机感光层;第一滤光层为红色滤光层、第二滤光层为绿色滤光层、第三滤光层为蓝色滤光层;经过上述三个步骤(顺序不限),可以形成一彩色滤光层,所述彩色滤光层即为本实施例中所述的光阻层。所述红色滤光层、绿色滤光层以及蓝色滤光层并排分布在同一平面内。
更进一步地,如果显示面板是搭配了四色技术的液晶面板,则彩色光阻层C为彩色滤光层以及透明滤光层(图中未示出)的组合。那么,此时,步骤S700中,于所述保护层6上沉积一彩色光阻层C并进行曝光及显影的步骤具体包括:
在所述保护层6上涂覆一层感光的红色有机感光层,掩模曝光、显影,形成与像素对应的红色滤光层;
在所述保护层6上涂覆一层感光的绿色有机感光层,掩模曝光、显影,形成与像素对应的绿色滤光层;
在所述保护层6上涂覆一层感光的蓝色有机感光层,掩模曝光、显影,形成与像素对应的蓝色滤光层。
在所述保护层6上涂覆一层感光的透明有机感光层,掩模曝光、显影,形成与像素对应的透明滤光层。
即,本实施例中所述彩色光阻层包括红色滤光层、绿色滤光层、蓝色滤光层以及透明滤光层。所述红色滤光层、绿色滤光层、蓝色滤光层以及透明滤光层并排分布在同一平面内。
在所述步骤S800中,利用具有通孔的掩膜板对彩色光阻层C曝光,再进行显影与蚀刻操作,进而除去绝缘层2及保护层6上对应于掩膜板通孔的区域,进而,这些区域对应的金属层可以显露在外面,形成阵列。然后接续后面的像素电极制程,于所述彩色光阻层C上沉积一透明导电层,并进行曝光、显影与蚀刻,所述透明导电层藉由所述开口藕接至第一金属层和/或第二金属层,以形成所述像素电极层。
通过本发明的上述实施例,可以得知在彩色光阻层C的涂布、曝光以及显影后,不再进行第二层绝缘层的成膜操作,也不需要光刻胶层的曝光、显影以及除去等操作,而是直接以已经成型的彩色光阻层作为屏蔽直接进行蚀刻以除去绝缘层2及保护层6上对应于掩膜板通孔的区域,再接续后面的像素电极制程。可见,本实施例的阵列基板制程通过简化其结构以及生产流程,提高了生产线的效率与产能;并可节省生产设备以及掩膜板费用,降低生产成本。
如图3所示,本发明的实施例还提供一种阵列基板结构,包括:
基板100;
第一金属层,位于所述基板100上,用来形成TFT的栅极1;
绝缘层2,位于所述基板100及所述第一金属层上;
主动层3,位于所述绝缘层2上,用来作为所述TFT的通道;
欧姆接触层4,位于所述主动层3上;
第二金属层,位于所述欧姆接触层4及所述绝缘层2上,用来形成所述TFT的源极与漏极5;
保护层6,位于所述第二金属层及所述绝缘层2上;
彩色光阻层C,位于所述保护层6上,其内包含多个滤光单元;
像素电极层,直接形成于所述彩色光阻层上。
进一步地,本实施例的阵列基板结构中,所述彩色光阻层C包括在同一平面内分布的多个红色滤光层、绿色滤光层及蓝色滤光层,所述多个红色滤光层、绿色滤光层及蓝色滤光层即为上述的滤光单元。
更进一步地,如果显示面板是搭配了四色技术的液晶面板,则彩色光阻层C为彩色滤光层以及透明滤光层(图中未示出)的组合。那么,所述彩色光阻层也包括在同一平面内分布的多个红色滤光层、绿色滤光层、蓝色滤光层及透明滤光层。
本发明的实施例还提供了一种显示面板包括:
背光模组,用以提供照明光源;
第一基板,所述第一基板包括:基板100;第一金属层,位于所述基板100一侧上;绝缘层2,位于所述基板100及所述第一金属层上;主动层3,位于所述绝缘层2上;欧姆接触层4,位于所述主动层3上;第二金属层,位于所述欧姆接触层4及所述绝缘层2上;保护层6,位于所述第二金属层及所述绝缘层2上;彩色光阻层C,位于所述保护层6上;像素电极层,直接形成于所述光阻层C上;位于所述像素电极层的第一配向膜;以及设置于所述基板100另一侧的第一偏光板;
第二基板,与所述第一基板相扣合;
液晶层,填充于第一基板与第二基板之间。
所述第二基板内侧设有黑色矩阵层及设在所述黑色矩阵层上的第二配向膜,所述第二基板的外侧还设有第二偏光板。
本实施例提供的显示面板中,所述彩色光阻层C包括在同一平面内分布的多个红色滤光层、绿色滤光层及蓝色滤光层或在同一平面内分布的多个红色滤光层、绿色滤光层、蓝色滤光层及透明滤光层。
本实施例的显示面板,在彩色光阻层C的涂布、曝光以及显影后,不再进行第二层绝缘层的成膜操作,也不需要光刻胶层的曝光、显影以及除去等操作,而是直接以已经成型的彩色光阻层C作为屏蔽直接进行蚀刻以除去绝缘层2及保护层6上与所述通孔对应的区域,再接续后面的像素电极制程。可见,本实施例的显示面板通过简化其结构以及生产流程,提高了生产线的效率与产能;并可节省生产设备以及掩膜板费用,降低生产成本。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (5)
1.一种阵列基板的制程,其特征在于,包括以下步骤:
在一基板上形成一第一金属层,蚀刻所述第一金属层,以形成晶体管的栅极;
沉积一绝缘层于所述基板及所述栅极上;
于所述绝缘层上,沉积一主动层及欧姆接触层;
蚀刻所述主动层及欧姆接触层,以形成所述晶体管的通道;
于所述欧姆接触层以及所述绝缘层上沉积一第二金属层,并蚀刻所述第二金属层以形成所述晶体管的源极与漏极;
于所述第二金属层以及所述绝缘层上沉积一保护层;
于所述保护层上沉积一彩色光阻层并进行曝光及显影;
利用具有通孔的掩膜板对所述彩色光阻层曝光,再进行显影与蚀刻操作,进而除去所述绝缘层及所述保护层上对应于所述掩膜板通孔的区域,进而,这些区域对应的金属层可以显露在外面,形成阵列,于所述彩色光阻层上直接沉积一透明导电层,并蚀刻所述透明导电层,以形成像素电极层,其中所述彩色光阻层是直接接觸所述透明导电层。
2.如权利要求1所述的阵列基板的制程,其特征在于,所述在一基板上形成一金属层,蚀刻所述第一金属层,以形成晶体管的栅极的具体步骤包括:
基板清洗,去除异物;
成膜工艺,在干净的基板表面,通过溅射沉积形成金属薄膜;
上光阻,在已形成的金属薄膜上面均匀涂覆一层光刻胶;
曝光,紫外线透过掩模板照射基板上的光刻胶,进行曝光;
显影,光刻胶曝光部分被显影液溶解,留下部分图案呈现所需形状;
蚀刻,把基板放入对应腐蚀液或腐蚀气体中,腐蚀掉无光刻胶覆盖的薄膜;
去光阻,去除残余的光刻胶,留下所需形状的金属薄膜,以形成扫描线、晶体管的栅极以及共通电极。
3.如权利要求1所述的阵列基板的制程,其特征在于,所述于所述欧姆接触层以及所述绝缘层上沉积一第二金属层,并蚀刻所述第二金属层以形成所述晶体管的源极与漏极的步骤具体包括:
成膜工艺,在干净的基板表面,通过溅射沉积形成金属薄膜;
上光阻,在已形成的金属薄膜上面均匀涂覆一层光刻胶;
曝光,紫外线透过掩模板照射基板上的光刻胶,进行曝光;
显影,光刻胶曝光部分被显影液溶解,留下部分图案呈现所需形状;
蚀刻,把基板放入对应腐蚀液或腐蚀气体中,腐蚀掉无光刻胶覆盖的薄膜;
去光阻,去除残余的光刻胶,留下所需形状的金属薄膜,以形成数据线、并于欧姆接触层上定义出晶体管的源极及漏极。
4.如权利要求1所述的阵列基板的制程,其特征在于,于所述保护层上沉积一彩色光阻层并进行曝光及显影的步骤具体为:
在所述保护层上涂覆一层感光的第一有机感光层,掩模曝光、显影,形成与像素对应的第一滤光层;
在所述保护层上涂覆一层感光的第二有机感光层,掩模曝光、显影,形成与像素对应的第二滤光层;
在所述保护层上涂覆一层感光的第三有机感光层,掩模曝光、显影,形成与像素对应的第三滤光层。
5.如权利要求4所述的阵列基板的制程,其特征在于,于所述保护层上沉积一彩色光阻层并进行曝光及显影的步骤具体为:
在所述保护层上涂覆一层感光的透明有机感光层,掩模曝光、显影,形成与像素对应的透明滤光层。
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