CN107123635A - 半导体装置及熔丝的切断方法 - Google Patents
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Abstract
提供在能够利用激光切断的熔丝元件中能够稳定地切断的半导体装置。熔丝元件由上部熔丝元件和下部熔丝布线及熔丝连接触点构成。在基于激光切断熔丝元件时下部熔丝布线被层间膜保护,只有上部熔丝元件被有效率地熔融气化。进而连接上部熔丝元件和下部熔丝布线的触点配置在激光照射区域的中心,因此成为连接部分最有效率地接受激光的能量的结构。
Description
技术领域
本发明关于半导体装置,特别关于具有通过切断能够变更电路构成的熔丝元件的半导体装置。
背景技术
在半导体装置的制造工序中,有如下方法,即在结束晶圆制造工序之后,例如利用激光,通过切断例如使用多晶硅或金属的熔丝元件进行电路构成的变更。通过利用本方法,在测定半导体装置的电特性之后,能够通过修正电阻的值来得到期望的特性,在完成重视模拟特性的半导体装置上成为特别有效的手段。在利用该激光的手法中,要求熔丝元件能够被稳定地切断。
在专利文献1中,提示了如下方法,即通过增大熔丝元件的因激光形成的熔断部分的面积,或者,在熔断部分加入缩窄部分来确保动力裕度(power margin),稳定地切断熔丝元件。
另外,在专利文献2中,提示了以触点连接层叠的熔丝元件,利用激光来切断触点部,从而难以发生切断不良的方法。
【现有技术文献】
【专利文献】
【专利文献1】日本特开平9-199596号公报
【专利文献2】日本特开平9-36234号公报。
发明内容
【发明要解决的课题】
作为用激光切断的熔丝元件的课题之一,可举出切断不良。如图4所示,若对熔丝元件15实施基于激光的切断则构成熔丝元件15的膜飞散,残留熔丝切断痕16。此时,因为能量不充分而熔丝元件成为不完全熔融气化的状态,发生熔丝切断残余17造成的短路,或者熔融气化的熔丝元件附着到周边的熔丝再附着18造成的短路等,从而成为切断不良。熔丝再附着18造成的短路也有可能使邻接熔丝元件间短路,在图4中示意性地示出这样的状况。
配置在熔丝元件上的膜越厚变得越容易引起这些切断不良。例如,在多层布线构造中将处于下层部的多晶硅层作为熔丝元件使用的情况下,熔丝元件上的膜的偏差会变大,变得难以得到更加稳定地切断熔丝的条件。这是因为残留在除去设在熔丝元件15的上方的、氮化膜等的最终保护膜的区域即保护膜开口区域43的膜的厚度有偏差。
在现有方法的例子即专利文献1中,由于熔丝元件的切断面在相同层露出,所以要考虑在发生图4所示的熔丝再附着18的情况下短路的危险性。
在现有方法的其他例子即专利文献2中,熔丝元件被层叠配置,进而使上层的熔丝元件具有缩窄部分,从而降低了专利文献1中引起的短路的危险性。然而,在本构造中成为激光也不少照射下层部的熔丝元件的结构。若着眼于该下层部的熔丝元件,则熔丝元件上的膜较厚,而且从激光接受的能量为不充分的状态,因此成为熔丝元件不完全气化,或者向周围再附着的危险性非常高的状态。由于这一情况,会出现上层部的熔丝元件和下层部的熔丝元件因熔丝再附着而短路的可能性。
本发明鉴于上述不良而成,其课题是提供具有不会发生切断残余的发生而造成的切断不良的熔丝元件的半导体装置。
【用于解决课题的方案】
为了解决上述课题,设为以如下内容为特征的半导体装置,即在能够进行基于激光的切断的熔丝元件中,配置有上部熔丝元件和下部熔丝布线,各个熔丝元件具有通过配置在被激光照射的激光照射区域的中心的触点来连接的构造,具备在上部熔丝元件与下部熔丝布线的层间膜配置有氮化硅膜的构造。
【发明效果】
依据本发明,在基于激光切断熔丝元件时,下部熔丝布线被氮化硅膜保护,只有上部熔丝元件的一部分即激光照射区域被有效率地熔融气化,进而由于连接上部熔丝元件和下部熔丝布线的触点配置在激光照射区域的中心,所以成为以触点为中心的激光照射区域最有效率地接受能量的结构。能够提供难以发生能量不充分造成的熔融气化的不足,且即便发生再附着也难以引起短路的熔丝元件。
附图说明
【图1】是示出本发明中的第1实施方式所涉及的半导体装置的俯视图。
【图2】是示出本发明中的第1实施方式所涉及的半导体装置的截面图。
【图3】是示出本发明中的第2实施方式所涉及的半导体装置的俯视图。
【图4】是示出现有的半导体装置的例子的俯视图。
具体实施方式
以下,参照附图,对本发明的实施方式进行说明。
图1是本发明中的第1实施方式所涉及的半导体装置的俯视图。配置有上部熔丝元件11及下部熔丝布线12,在上部熔丝元件11的激光照射区域42的中心配置有用于连接上部熔丝元件11和下部熔丝布线12的熔丝连接触点13。上部熔丝元件11和下部熔丝布线12和熔丝连接触点13构成1个熔丝元件。上部熔丝元件11具有接受激光的照射的激光照射区域42和从激光照射区域42延伸的上部熔丝布线部14。图1示出并联配置多个熔丝元件的状态,在这些多个熔丝元件上设有保护膜开口区域43。保护膜开口区域43成为除去了配置在半导体装置的上部的例如氮化硅膜这样的最终保护膜的区域。
构成相邻的熔丝元件的上部熔丝元件11和下部熔丝布线12交替配置。即,在位于保护膜开口区域43的一端的上部熔丝元件11相邻地配置有下部熔丝布线12。通过这样的结构,能够大幅减小对上部熔丝元件11进行激光照射而被吹飞的部分再附着到照射的区域的周围而短路这一担忧。
接着,利用图2,对本发明中的第1实施方式所涉及的半导体装置的截面图进行说明。如图2所示在半导体衬底即硅衬底31上配置有第1层间绝缘膜21,在第1层间绝缘膜21上配置有下部熔丝布线12,以覆盖下部熔丝布线12及第1层间绝缘膜21的方式配置有熔丝间绝缘膜30。而且,在熔丝间绝缘膜30上配置有上部熔丝元件11,其上配置有第2层间绝缘膜25及最终保护膜26。在熔丝间绝缘膜30设有用于电连接上部熔丝元件11和下部熔丝布线12的熔丝连接触点13。在最终保护膜26以包括上部熔丝元件11上的一部分的区域开口的方式设有保护膜开口区域43,该上部熔丝元件11上的一部分包括激光照射区域42。
在本实施方式中,熔丝间绝缘膜30设为由覆盖下部熔丝布线12及第1层间绝缘膜21的第3层间绝缘膜22、设在第3层间绝缘膜22上的氮化硅膜23、和覆盖氮化硅膜23的第4层间绝缘膜24构成的多层膜。在此,在利用氮化硅膜23的情况下,氮化硅膜23需要设为至少比图1的激光点41区域更宽。因而,在相邻的熔丝元件的激光点41之间无需设有氮化硅膜23,但是即便遍及保护膜开口区域43的整个面设有氮化硅膜23的构成也无妨。
熔丝连接触点13以连接所述上部熔丝元件11与下部熔丝布线12的方式配置。另外,所述熔丝连接触点13以到达激光照射区域42的中心的方式配置。配置在保护膜开口区域43的上部熔丝元件11上的第2层间绝缘膜25,需要加进制造上的膜厚的偏差而设定为不会使上部熔丝元件11露出的厚度。另一方面,若上部熔丝元件11上的第2层间绝缘膜25较厚则用于稳定地切断熔丝元件的动力裕度会变少,因此还需要在加进前述的不会露出的厚度之上减薄。
在实施熔丝元件的基于激光的切断时,以熔丝连接触点13与激光点41的中心一致的方式进行设定。若激光照射到熔丝元件则上部熔丝元件11的激光照射区域42吸收激光的能量而发热,熔融气化。此时被激光照射的区域体积会膨胀,上部熔丝元件11上的第2层间绝缘膜25因体积膨胀的应力而被吹飞,气化的激光照射区域42向外侧扩散,完成切断。
氮化硅膜23承担使激光的能量不会传到下部熔丝布线12的作用和保护下部熔丝布线的作用。通过配置该氮化硅膜23,下部熔丝布线12不会接受激光的能量。因而,下部熔丝布线12不会成为因接受不充分的激光的能量而发生的熔融气化不足或再附着等的切断不良所牵涉的状态,而成为只有上部熔丝元件11有效率地接受激光的能量的结构。
另外,熔丝连接触点13以到达激光点41的中心的方式设定,因此熔丝连接触点13上的激光照射区域42成为激光的能量密度最高的状态。因为激光的能量密度从激光的中心向外周变低。由此,成为熔丝连接触点13上的激光照射区域42最容易熔融气化的结构,成为难以引起切断不良的构造。另外,熔融气化不足造成的对上部熔丝元件11的一部分即激光照射区域42的照射部周边的再附着,一般在激光的能量密度低的激光点41的周边发生。在本发明的构造中,连接上部熔丝元件11和下部熔丝布线12的熔丝连接触点13配置在激光点的中心,因此成为难以因再附着而发生短路的构造。
另外关于再附着,容易在图1所示的上部熔丝布线部14侧发生。原因在于激光的能量也传到上部熔丝布线部,但在熔融气化上不会成为充分的状态。因此,在上部熔丝布线部14发生再附着的情况下,存在与邻接熔丝元件短路的危险性。可是,如本实施方式所示通过交替配置上部熔丝布线部14,能够避免在邻接熔丝元件间的短路。
另外,包围熔丝连接触点13的上部熔丝元件11的一部分即激光照射区域42的形状优选为圆形。这是因为能够最均匀地接受激光的能量,以及能够防止将第2层间绝缘膜25吹飞时对侧壁方向的倒塌。也能够设为四边形或者多边形。此外,在下部熔丝布线12中与熔丝连接触点13相连的部分不特别指定形状,与通常的布线同样地处理即可。
图3是本发明中的第2实施方式所涉及的半导体装置的俯视图。第2实施方式中对下部熔丝布线12的布局的自由度进行说明。
由于下部熔丝布线12被氮化硅膜23保护,所以如图3所示下部熔丝布线12的布局能够自由进行,布局设计变得容易。下部熔丝布线12也可以从保护膜开口区域43的一边到另一边向其下方弯曲而配置。也可以连接下部熔丝布线12彼此,或者分支为多个下部熔丝布线12。
另外,从上部熔丝元件11的激光照射区域42延伸的布线即上部熔丝布线部,形成为宽度比从下部熔丝布线12的熔丝连接触点13延伸的布线更小、更细,但这是因为通过激光照射容易切断从上部熔丝元件11的熔丝连接触点13延伸的布线。
在本发明中,由于熔丝元件由上部熔丝元件11和下部熔丝布线12和熔丝连接触点13构成,所以能够由金属布线构成上部熔丝元件11、由多晶硅构成下部熔丝布线。另外,上部熔丝元件11及下部熔丝布线也能够都由金属布线构成。熔丝连接触点13既可为与上部熔丝元件相同的材料,也可设为使用高熔点金属材料的钨销构造。如果在上部熔丝元件11和下部熔丝布线12的熔丝间绝缘膜配置有氮化硅膜23,能够通过熔丝连接触点13连接,则也能够在其他布线间等构成。
根据以上,通过采用本发明,在基于激光切断熔丝元件时下部熔丝布线12被氮化硅膜23保护,只有上部熔丝元件11被有效率地熔融气化,进而连接上部熔丝元件11和下部熔丝布线12的熔丝连接触点13配置在激光照射区域42的中心,以连接部分为中心的激光照射区域42成为最有效率地接受激光的能量的结构,因此能够提供难以发生吸收的能量不充分而造成的熔融气化不足,且即便发生再附着也难以引起短路的熔丝元件。
【标号说明】
11 上部熔丝元件;12 下部熔丝布线;13 熔丝连接触点;14 上部熔丝布线部;15熔丝元件;16 熔丝切断痕;17 熔丝切断残余;18 熔丝再附着;21 第1层间绝缘膜;22第3层间绝缘膜;23 氮化硅膜;24 第4层间绝缘膜;25 第2层间绝缘膜;26 最终保护膜;30 熔丝间绝缘膜;31 硅衬底;41 激光点;42 激光照射区域;43 保护膜开口区域。
Claims (9)
1.一种半导体装置,其特征在于,包括:
半导体衬底;
第1层间绝缘膜,设在所述半导体衬底的表面;
下部熔丝布线,设在所述第1层间绝缘膜上;
熔丝间绝缘膜,设在所述下部熔丝布线上;
上部熔丝元件,设在所述熔丝间绝缘膜上并具有激光照射区域及上部熔丝布线部;
熔丝连接触点,设在所述熔丝间绝缘膜并连接所述下部熔丝布线和所述上部熔丝元件;以及
第2层间绝缘膜,设在所述熔丝间绝缘膜上,
所述激光照射区域为圆形,所述熔丝连接触点配置在所述激光照射区域的中心。
2.如权利要求1所述的半导体装置,其特征在于,所述第2层间绝缘膜包括第3氧化膜、氮化硅膜、和第4氧化膜。
3.如权利要求1或2所述的半导体装置,其特征在于,所述上部熔丝元件的上部熔丝布线部不与相邻的上部熔丝元件的上部熔丝布线部邻接。
4.如权利要求1或2所述的半导体装置,其特征在于,所述激光照射区域俯视观察为圆形。
5. 如权利要求1或2所述的半导体装置,其特征在于,还具有:
最终保护膜,设在所述第2层间绝缘膜上;以及
保护膜开口区域,设在所述最终保护膜的、成为包含所述激光照射区域的所述上部熔丝元件的上方的区域,
所述下部熔丝布线从所述保护膜开口区域的一边到另一边向其下方弯曲而配置。
6.如权利要求1或2所述的半导体装置,其特征在于,所述下部熔丝布线和所述上部熔丝元件由不同的材料构成。
7.如权利要求1或2所述的半导体装置,其特征在于,所述上部熔丝元件和所述熔丝连接触点由不同的材料构成。
8.如权利要求1或2所述的半导体装置,其特征在于,所述上部熔丝布线部宽度比所述下部熔丝布线更小。
9.一种熔丝切断方法,其特征在于,在权利要求1或2所述的半导体装置中,向所述激光照射区域照射激光束,使所述激光照射区域熔融气化,从而切断所述激光照射区域。
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JP (1) | JP6636823B2 (zh) |
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CN110476237A (zh) * | 2017-10-19 | 2019-11-19 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
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JPH0936234A (ja) * | 1995-05-16 | 1997-02-07 | Toshiba Corp | 半導体装置およびヒューズの切断方法 |
US6225652B1 (en) * | 1999-08-02 | 2001-05-01 | Clear Logic, Inc. | Vertical laser fuse structure allowing increased packing density |
US20070264874A1 (en) * | 2006-05-09 | 2007-11-15 | Samsung Electronics Co., Ltd. | Fuse structure of a semiconductor device and method of manufacturing the same |
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CN110476237B (zh) * | 2017-10-19 | 2023-06-02 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
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US20170250136A1 (en) | 2017-08-31 |
JP6636823B2 (ja) | 2020-01-29 |
KR20170100432A (ko) | 2017-09-04 |
US10043749B2 (en) | 2018-08-07 |
JP2017152572A (ja) | 2017-08-31 |
TW201743426A (zh) | 2017-12-16 |
CN107123635B (zh) | 2021-07-23 |
TWI695476B (zh) | 2020-06-01 |
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