CN107075309B - 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 - Google Patents

浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 Download PDF

Info

Publication number
CN107075309B
CN107075309B CN201580047704.7A CN201580047704A CN107075309B CN 107075309 B CN107075309 B CN 107075309B CN 201580047704 A CN201580047704 A CN 201580047704A CN 107075309 B CN107075309 B CN 107075309B
Authority
CN
China
Prior art keywords
water
polyvinyl alcohol
polishing
slurry composition
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580047704.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN107075309A (zh
Inventor
增田刚
北村启
松村义之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Nihon Cabot Microelectronics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Cabot Microelectronics KK filed Critical Nihon Cabot Microelectronics KK
Publication of CN107075309A publication Critical patent/CN107075309A/zh
Application granted granted Critical
Publication of CN107075309B publication Critical patent/CN107075309B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/04Aqueous dispersions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/37Polymers
    • C11D3/3746Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3753Polyvinylalcohol; Ethers or esters thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials Engineering (AREA)
CN201580047704.7A 2014-09-05 2015-09-04 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 Active CN107075309B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014181015A JP6559936B2 (ja) 2014-09-05 2014-09-05 スラリー組成物、リンス組成物、基板研磨方法およびリンス方法
JP2014-181015 2014-09-05
PCT/JP2015/004504 WO2016035346A1 (en) 2014-09-05 2015-09-04 Slurry composition, rinse composition, substrate polishing method and rinsing method

Publications (2)

Publication Number Publication Date
CN107075309A CN107075309A (zh) 2017-08-18
CN107075309B true CN107075309B (zh) 2020-09-01

Family

ID=54197031

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580047704.7A Active CN107075309B (zh) 2014-09-05 2015-09-04 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法

Country Status (5)

Country Link
JP (1) JP6559936B2 (ko)
KR (1) KR102524838B1 (ko)
CN (1) CN107075309B (ko)
TW (1) TWI633178B (ko)
WO (1) WO2016035346A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
JP6971676B2 (ja) * 2016-08-29 2021-11-24 株式会社荏原製作所 基板処理装置および基板処理方法
CN109673157B (zh) * 2016-08-31 2021-05-07 福吉米株式会社 研磨用组合物和研磨用组合物套组
JP6495230B2 (ja) * 2016-12-22 2019-04-03 花王株式会社 シリコンウェーハ用リンス剤組成物
CN110036086B (zh) * 2016-12-28 2022-04-26 霓达杜邦股份有限公司 研磨用组合物
WO2018124226A1 (ja) * 2016-12-28 2018-07-05 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
JP7450532B2 (ja) * 2018-03-30 2024-03-15 株式会社フジミインコーポレーテッド 研磨用組成物
JP7361467B2 (ja) 2018-12-25 2023-10-16 ニッタ・デュポン株式会社 研磨用組成物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
CN112457930A (zh) * 2019-09-06 2021-03-09 福吉米株式会社 表面处理组合物、表面处理组合物的制造方法、表面处理方法和半导体基板的制造方法
TW202212554A (zh) * 2020-09-25 2022-04-01 日商福吉米股份有限公司 表面處理組合物、表面處理組合物之製造方法、表面處理方法、及半導體基板之製造方法
CN115873508A (zh) * 2022-12-26 2023-03-31 博力思(天津)电子科技有限公司 去除速率高且表面粗糙度低的SiC衬底抛光液及抛光工艺

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11140427A (ja) * 1997-11-13 1999-05-25 Kobe Steel Ltd 研磨液および研磨方法
CN1384860A (zh) * 1999-11-04 2002-12-11 先进微装置公司 含有机添加剂的钽障壁浆液
CN1613941A (zh) * 2003-09-05 2005-05-11 福吉米株式会社 抛光组合物
CN1721515A (zh) * 2004-06-18 2006-01-18 福吉米株式会社 清洗组合物及清洗和制造硅片的方法
TW201350563A (zh) * 2012-03-14 2013-12-16 Fujimi Inc 研磨用組成物及半導體基板之製造方法
TW201412960A (zh) * 2012-05-25 2014-04-01 Nissan Chemical Ind Ltd 晶圓用研磨液組成物
TW201527506A (zh) * 2013-10-25 2015-07-16 Kao Corp 矽晶圓用研磨液組合物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130041084A (ko) * 2010-06-18 2013-04-24 히타치가세이가부시끼가이샤 반도체 기판용 연마액 및 반도체 웨이퍼의 제조 방법
JP2014038906A (ja) * 2012-08-13 2014-02-27 Fujimi Inc 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11140427A (ja) * 1997-11-13 1999-05-25 Kobe Steel Ltd 研磨液および研磨方法
CN1384860A (zh) * 1999-11-04 2002-12-11 先进微装置公司 含有机添加剂的钽障壁浆液
CN1613941A (zh) * 2003-09-05 2005-05-11 福吉米株式会社 抛光组合物
CN1721515A (zh) * 2004-06-18 2006-01-18 福吉米株式会社 清洗组合物及清洗和制造硅片的方法
TW201350563A (zh) * 2012-03-14 2013-12-16 Fujimi Inc 研磨用組成物及半導體基板之製造方法
TW201412960A (zh) * 2012-05-25 2014-04-01 Nissan Chemical Ind Ltd 晶圓用研磨液組成物
TW201527506A (zh) * 2013-10-25 2015-07-16 Kao Corp 矽晶圓用研磨液組合物

Also Published As

Publication number Publication date
JP6559936B2 (ja) 2019-08-14
WO2016035346A1 (en) 2016-03-10
TWI633178B (zh) 2018-08-21
CN107075309A (zh) 2017-08-18
KR20170048513A (ko) 2017-05-08
TW201615797A (zh) 2016-05-01
KR102524838B1 (ko) 2023-04-24
JP2016056220A (ja) 2016-04-21

Similar Documents

Publication Publication Date Title
CN107075309B (zh) 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法
US9914853B2 (en) Slurry composition and method for polishing substrate
KR102226501B1 (ko) 연마용 조성물 및 연마물 제조 방법
EP3053978B1 (en) Polishing composition and method for producing same
TWI798325B (zh) 研磨用組合物
EP3053977B1 (en) Polishing composition and method for producing same
TWI743090B (zh) 矽基板之研磨方法及研磨用組成物套組
JP7353051B2 (ja) シリコンウェーハ研磨用組成物
JP7349309B2 (ja) シリコンウェーハ用研磨用組成物
US11384257B2 (en) Chemical-mechanical polishing composition, rinse composition, chemical-mechanical polishing method, and rinsing method
TWI763743B (zh) 研磨用組成物
JP7361467B2 (ja) 研磨用組成物
CN117778115A (zh) 用于含硅基材的原位清洗组合物及原位清洗方法
EP4083153B1 (en) Polishing composition, and method of polishing silicon wafer
KR20220113498A (ko) 화학-기계적 연마 조성물 및 이를 이용한 화학-기계적 연마 방법
WO2022113986A1 (ja) シリコンウェーハ用研磨用組成物およびその利用

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Mie, Japan

Patentee after: CMC Materials Co.,Ltd.

Address before: Mie, Japan

Patentee before: NIHON CABOT MICROELECTRONICS Kabushiki Kaisha