CN107074580B - 纳米晶体的排列方法、纳米晶体结构体的制作方法、纳米晶体结构体形成基板及纳米晶体结构体形成基板的制造方法 - Google Patents
纳米晶体的排列方法、纳米晶体结构体的制作方法、纳米晶体结构体形成基板及纳米晶体结构体形成基板的制造方法 Download PDFInfo
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- CN107074580B CN107074580B CN201580055867.XA CN201580055867A CN107074580B CN 107074580 B CN107074580 B CN 107074580B CN 201580055867 A CN201580055867 A CN 201580055867A CN 107074580 B CN107074580 B CN 107074580B
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- nanocrystals
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- nanocrystal
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- barium titanate
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- 239000002159 nanocrystal Substances 0.000 title claims abstract description 382
- 239000000758 substrate Substances 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 72
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims abstract description 62
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- 229910052751 metal Inorganic materials 0.000 claims description 7
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- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000005119 centrifugation Methods 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
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- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-Me3C6H3 Natural products CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 claims description 4
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
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- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 8
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 8
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 239000005642 Oleic acid Substances 0.000 description 8
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 8
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 8
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 8
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- 238000011084 recovery Methods 0.000 description 5
- 230000002194 synthesizing effect Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- -1 amine compound Chemical class 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000002003 electron diffraction Methods 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- WZEYZMKZKQPXSX-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1.CC1=CC(C)=CC(C)=C1 WZEYZMKZKQPXSX-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 3
- 229910001863 barium hydroxide Inorganic materials 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
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- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 description 2
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F11/00—Compounds of calcium, strontium, or barium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/003—Titanates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/003—Titanates
- C01G23/006—Alkaline earth titanates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Geology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Nanotechnology (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014212666 | 2014-10-17 | ||
JP2014-212666 | 2014-10-17 | ||
PCT/JP2015/078489 WO2016060042A1 (ja) | 2014-10-17 | 2015-10-07 | ナノ結晶の配列方法、ナノ結晶構造体の作製方法、ナノ結晶構造体形成基板及びナノ結晶構造体形成基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
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CN107074580A CN107074580A (zh) | 2017-08-18 |
CN107074580B true CN107074580B (zh) | 2020-05-22 |
Family
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CN201580055867.XA Expired - Fee Related CN107074580B (zh) | 2014-10-17 | 2015-10-07 | 纳米晶体的排列方法、纳米晶体结构体的制作方法、纳米晶体结构体形成基板及纳米晶体结构体形成基板的制造方法 |
Country Status (6)
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US (1) | US10766785B2 (zh) |
EP (1) | EP3208238A4 (zh) |
JP (1) | JP6422989B2 (zh) |
KR (1) | KR101906219B1 (zh) |
CN (1) | CN107074580B (zh) |
WO (1) | WO2016060042A1 (zh) |
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JP6800450B2 (ja) * | 2017-06-30 | 2020-12-16 | 国立研究開発法人産業技術総合研究所 | 金属酸化物ナノ結晶の製造方法、金属酸化物ナノ結晶膜固定化基板の製造方法 |
JP7209952B2 (ja) * | 2018-07-05 | 2023-01-23 | 一般財団法人ファインセラミックスセンター | 強誘電体ナノ粒子集積方法及び電子部品の製造方法 |
JP7411225B2 (ja) | 2020-07-03 | 2024-01-11 | 国立研究開発法人産業技術総合研究所 | セラミックコンデンサ及びその製造方法 |
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US7045195B2 (en) | 2000-10-16 | 2006-05-16 | Governing Council Of The University Of Toronto | Composite materials having substrates with self-assembled colloidal crystalline patterns thereon |
JP4532039B2 (ja) | 2001-09-28 | 2010-08-25 | シャープ株式会社 | レジスト剥離方法及び薄膜回路素子の形成方法 |
TW200408324A (en) * | 2002-09-19 | 2004-05-16 | Daikin Ind Ltd | Material using patterned surface as template and manufacturing method thereof |
EP1933393A1 (en) | 2006-12-13 | 2008-06-18 | Samsung SDI Co., Ltd. | Method of manufacturing a substrate for an electronic device |
JP2008230959A (ja) | 2007-02-22 | 2008-10-02 | Kyushu Univ | ペロブスカイト酸化物単結晶およびその製造方法 |
JP5488957B2 (ja) * | 2009-01-07 | 2014-05-14 | 独立行政法人産業技術総合研究所 | ナノクリスタル集合体、およびその製造方法 |
WO2012027398A2 (en) * | 2010-08-23 | 2012-03-01 | Massachusetts Institute Of Technology | Compositions, methods, and systems relating to controlled crystallization and/or nucleation of molecular species |
JP5618087B2 (ja) * | 2011-03-14 | 2014-11-05 | 独立行政法人産業技術総合研究所 | ナノ結晶の配列方法、ナノ結晶膜の作製方法、ナノ結晶膜被覆基板及びその製造方法 |
CN102992392B (zh) | 2012-11-28 | 2014-07-09 | 江汉大学 | 一种钛酸锶空心纳米棒阵列的制备方法 |
CN103319736B (zh) | 2013-06-20 | 2015-07-22 | 电子科技大学 | 一种制造高介电复合薄膜的方法 |
CN103880014B (zh) | 2014-02-19 | 2015-09-30 | 陕西科技大学 | 一种SiO2-BaTiO3双尺寸胶体晶体的制备方法 |
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2015
- 2015-10-07 US US15/518,957 patent/US10766785B2/en active Active
- 2015-10-07 CN CN201580055867.XA patent/CN107074580B/zh not_active Expired - Fee Related
- 2015-10-07 JP JP2016554052A patent/JP6422989B2/ja active Active
- 2015-10-07 WO PCT/JP2015/078489 patent/WO2016060042A1/ja active Application Filing
- 2015-10-07 EP EP15851305.1A patent/EP3208238A4/en not_active Withdrawn
- 2015-10-07 KR KR1020177012998A patent/KR101906219B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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WO2016060042A1 (ja) | 2016-04-21 |
JPWO2016060042A1 (ja) | 2017-07-27 |
KR101906219B1 (ko) | 2018-10-10 |
US10766785B2 (en) | 2020-09-08 |
CN107074580A (zh) | 2017-08-18 |
JP6422989B2 (ja) | 2018-11-14 |
EP3208238A1 (en) | 2017-08-23 |
EP3208238A4 (en) | 2018-06-27 |
US20170225964A1 (en) | 2017-08-10 |
KR20170072256A (ko) | 2017-06-26 |
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