CN107068705B - 成像装置和电子设备 - Google Patents

成像装置和电子设备 Download PDF

Info

Publication number
CN107068705B
CN107068705B CN201710116321.1A CN201710116321A CN107068705B CN 107068705 B CN107068705 B CN 107068705B CN 201710116321 A CN201710116321 A CN 201710116321A CN 107068705 B CN107068705 B CN 107068705B
Authority
CN
China
Prior art keywords
film
color filter
colour filter
image pickup
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710116321.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN107068705A (zh
Inventor
荻田知治
山本笃志
田谷圭司
大塚洋
大塚洋一
田渕清隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN107068705A publication Critical patent/CN107068705A/zh
Application granted granted Critical
Publication of CN107068705B publication Critical patent/CN107068705B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201710116321.1A 2011-03-14 2012-03-07 成像装置和电子设备 Active CN107068705B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011055631 2011-03-14
JP2011-055631 2011-03-14
CN201210058232.3A CN102683366B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201210058232.3A Division CN102683366B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备

Publications (2)

Publication Number Publication Date
CN107068705A CN107068705A (zh) 2017-08-18
CN107068705B true CN107068705B (zh) 2019-03-08

Family

ID=46815045

Family Applications (5)

Application Number Title Priority Date Filing Date
CN201710116321.1A Active CN107068705B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201210058232.3A Active CN102683366B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备
CN201610037666.3A Active CN105720066B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备
CN201610626493.9A Active CN106129077B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610623971.0A Active CN106098716B (zh) 2011-03-14 2012-03-07 成像装置和电子设备

Family Applications After (4)

Application Number Title Priority Date Filing Date
CN201210058232.3A Active CN102683366B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备
CN201610037666.3A Active CN105720066B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备
CN201610626493.9A Active CN106129077B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610623971.0A Active CN106098716B (zh) 2011-03-14 2012-03-07 成像装置和电子设备

Country Status (3)

Country Link
US (1) US8742525B2 (enExample)
JP (1) JP5938946B2 (enExample)
CN (5) CN107068705B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013229446A (ja) * 2012-04-25 2013-11-07 Sharp Corp 固体撮像素子及び固体撮像の製造方法
TWI620445B (zh) 2013-03-25 2018-04-01 新力股份有限公司 攝像元件及電子機器
JP6130221B2 (ja) * 2013-05-24 2017-05-17 ソニー株式会社 固体撮像装置、および電子機器
US9064989B2 (en) * 2013-08-30 2015-06-23 Taiwan Semiconductor Manufacturing Company Limited Photo diode and method of forming the same
JP2015076475A (ja) * 2013-10-08 2015-04-20 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6233188B2 (ja) * 2013-12-12 2017-11-22 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2016134587A (ja) * 2015-01-22 2016-07-25 ソニー株式会社 固体撮像装置、及び、電子機器
JP6903584B2 (ja) * 2015-10-26 2021-07-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9991302B1 (en) * 2016-11-17 2018-06-05 Visera Technologies Company Limited Optical sensor with color filters having inclined sidewalls
US9985072B1 (en) * 2016-11-29 2018-05-29 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor with dual damascene grid design having absorption enhancement structure
TWI756388B (zh) * 2017-03-24 2022-03-01 日商富士軟片股份有限公司 結構體、近紅外線透射濾波層形成用組成物及光感測器
JP2018200909A (ja) * 2017-05-25 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP7383876B2 (ja) * 2018-02-02 2023-11-21 株式会社ニコン 撮像素子、及び、撮像装置
US10770496B2 (en) * 2018-04-16 2020-09-08 Visera Technologies Company Limited Optical sensors and methods for forming the same
WO2019220861A1 (ja) * 2018-05-16 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法
CN110729314A (zh) * 2018-07-17 2020-01-24 联华电子股份有限公司 光学感测装置
JP7362198B2 (ja) * 2018-07-18 2023-10-17 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器
KR102649313B1 (ko) 2019-02-13 2024-03-20 삼성전자주식회사 이미지 센서
KR102747501B1 (ko) * 2019-10-02 2024-12-31 에스케이하이닉스 주식회사 이미지 센서
JP2021082716A (ja) * 2019-11-19 2021-05-27 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
US11631709B2 (en) * 2020-03-10 2023-04-18 Visera Technologies Company Limited Solid-state image sensor
JP7620005B2 (ja) * 2020-03-27 2025-01-22 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
KR102786345B1 (ko) * 2020-04-24 2025-03-24 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR102897588B1 (ko) 2020-11-27 2025-12-10 삼성전자주식회사 이미지 센서
EP4310911A4 (en) 2021-03-16 2024-07-31 Sony Semiconductor Solutions Corporation IMAGING DEVICE
CN220603808U (zh) * 2022-05-16 2024-03-15 3M创新有限公司 用于显示系统的光学构造体
CN120769579A (zh) * 2025-09-08 2025-10-10 格科微电子（上海）有限公司 一种光学传感器的滤光器及其形成方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6618087B1 (en) * 1997-12-11 2003-09-09 Nec Electronics Corporation Solid-state image device
CN1717808A (zh) * 2004-01-15 2006-01-04 松下电器产业株式会社 固体成像装置,其制造方法,和使用固体成像装置的相机
CN1873995A (zh) * 2005-06-03 2006-12-06 东部电子有限公司 Cmos图像传感器及其制造方法
CN101728407A (zh) * 2008-10-31 2010-06-09 索尼株式会社 固态成像器件及其制造方法和电子设备
CN101807591A (zh) * 2009-02-18 2010-08-18 索尼公司 固态成像器件、电子装置及其制造方法
CN101853871A (zh) * 2009-03-31 2010-10-06 索尼公司 固态成像装置及其制造方法以及电子设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3159171B2 (ja) * 1998-06-05 2001-04-23 日本電気株式会社 固体撮像装置
AU2001275802A1 (en) * 2000-07-31 2002-02-13 Hamamatsu Photonics K.K. Radiation sensor
JP2005033074A (ja) * 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
US20050116271A1 (en) * 2003-12-02 2005-06-02 Yoshiaki Kato Solid-state imaging device and manufacturing method thereof
CN1825607A (zh) * 2005-01-18 2006-08-30 松下电器产业株式会社 固态成像器件及其制造方法和配置有固态成像器件的相机
JP4623641B2 (ja) * 2005-02-23 2011-02-02 パナソニック株式会社 固体撮像装置の製造方法
JP4274145B2 (ja) * 2005-04-25 2009-06-03 ソニー株式会社 固体撮像素子の製造方法
JP2007156219A (ja) * 2005-12-07 2007-06-21 Seiko Epson Corp 情報表示システム、情報表示装置および位置指示装置
JP4992446B2 (ja) * 2006-02-24 2012-08-08 ソニー株式会社 固体撮像装置及びその製造方法、並びにカメラ
CN101079967B (zh) * 2006-02-24 2013-07-10 索尼株式会社 固态成像装置及其制造方法、以及摄像机
JP2008166677A (ja) * 2006-12-08 2008-07-17 Sony Corp 固体撮像装置とその製造方法並びにカメラ
US7973271B2 (en) * 2006-12-08 2011-07-05 Sony Corporation Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
CN101652864A (zh) * 2007-04-10 2010-02-17 富士胶片株式会社 有机电致发光显示设备
JP2009031742A (ja) * 2007-04-10 2009-02-12 Fujifilm Corp 有機電界発光表示装置
JP5262180B2 (ja) * 2008-02-26 2013-08-14 ソニー株式会社 固体撮像装置及びカメラ
CN101588506B (zh) * 2008-05-22 2012-05-30 索尼株式会社 固体摄像装置及其制造方法以及电子设备
JP2010073819A (ja) * 2008-09-17 2010-04-02 Canon Inc 光電変換装置及び撮像システム
JP2010085700A (ja) * 2008-09-30 2010-04-15 Fujifilm Corp カラーフィルタの製造方法
JP2010085755A (ja) 2008-09-30 2010-04-15 Fujifilm Corp カラーフィルタの製造方法及び固体撮像装置
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP2010258157A (ja) * 2009-04-23 2010-11-11 Panasonic Corp 固体撮像装置およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6618087B1 (en) * 1997-12-11 2003-09-09 Nec Electronics Corporation Solid-state image device
CN1717808A (zh) * 2004-01-15 2006-01-04 松下电器产业株式会社 固体成像装置,其制造方法,和使用固体成像装置的相机
CN1873995A (zh) * 2005-06-03 2006-12-06 东部电子有限公司 Cmos图像传感器及其制造方法
CN101728407A (zh) * 2008-10-31 2010-06-09 索尼株式会社 固态成像器件及其制造方法和电子设备
CN101807591A (zh) * 2009-02-18 2010-08-18 索尼公司 固态成像器件、电子装置及其制造方法
CN101853871A (zh) * 2009-03-31 2010-10-06 索尼公司 固态成像装置及其制造方法以及电子设备

Also Published As

Publication number Publication date
US8742525B2 (en) 2014-06-03
US20120235263A1 (en) 2012-09-20
JP5938946B2 (ja) 2016-06-22
CN106098716B (zh) 2018-04-17
CN106129077B (zh) 2019-05-10
CN106129077A (zh) 2016-11-16
CN102683366B (zh) 2017-04-12
CN105720066A (zh) 2016-06-29
CN106098716A (zh) 2016-11-09
CN105720066B (zh) 2021-11-16
CN102683366A (zh) 2012-09-19
JP2012209542A (ja) 2012-10-25
CN107068705A (zh) 2017-08-18

Similar Documents

Publication Publication Date Title
CN107068705B (zh) 成像装置和电子设备
US9461081B2 (en) Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
CN102651376B (zh) 固体摄像装置及其制造方法以及电子设备
CN109728014B (zh) 摄像装置
JP5556122B2 (ja) 固体撮像装置、固体撮像装置の製造方法、電子機器
US20070187793A1 (en) Filter, color filter array, method of manufacturing the color filter array, and image sensor
CN108807432B (zh) 影像感测器结构
CN102683365A (zh) 固态摄像装置、制造固态摄像装置的方法以及电子设备
JP2006295125A (ja) 固体撮像装置及びその製造方法並びにカメラ
CN108269815A (zh) Cmos图像传感器及其形成方法
US8395699B2 (en) Solid-state imaging device, camera, electronic apparatus, and method for manufacturing solid-state imaging device
CN101183663B (zh) 图像传感器及其制造方法
KR100832710B1 (ko) 이미지 센서 및 이의 제조 방법
WO2010023916A1 (ja) カラー撮像デバイスおよびカラー撮像デバイスの製造方法
CN101118298A (zh) 制作彩色滤光阵列的方法
JP2001223348A (ja) 固体撮像装置及びその製造方法
KR20100077775A (ko) 씨모스 이미지 센서 및 그의 제조 방법
JP2010232274A (ja) 固体撮像装置、電子機器、固体撮像装置の製造方法
CN101271908A (zh) 制作互补型金属氧化物半导体图像传感器的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant