JP4623641B2 - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
- Publication number
- JP4623641B2 JP4623641B2 JP2005046811A JP2005046811A JP4623641B2 JP 4623641 B2 JP4623641 B2 JP 4623641B2 JP 2005046811 A JP2005046811 A JP 2005046811A JP 2005046811 A JP2005046811 A JP 2005046811A JP 4623641 B2 JP4623641 B2 JP 4623641B2
- Authority
- JP
- Japan
- Prior art keywords
- color filter
- filter layer
- film
- photoelectric conversion
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 70
- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 81
- 239000000463 material Substances 0.000 claims description 72
- 238000012546 transfer Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 240
- 239000000049 pigment Substances 0.000 description 34
- 239000006185 dispersion Substances 0.000 description 33
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 30
- 238000004043 dyeing Methods 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 18
- 238000011161 development Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 14
- 230000003595 spectral effect Effects 0.000 description 14
- 230000007547 defect Effects 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000000975 dye Substances 0.000 description 10
- 206010034972 Photosensitivity reaction Diseases 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 230000036211 photosensitivity Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000001056 green pigment Substances 0.000 description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000001055 blue pigment Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 239000000980 acid dye Substances 0.000 description 2
- 238000004061 bleaching Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000001054 red pigment Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000001045 blue dye Substances 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 first Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 239000001044 red dye Substances 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14868—CCD or CID colour imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
該透明平坦化膜上にカラーフィルタ層が形成されている場合に比べ、光電変換素子上に形成される層の膜厚が小さくなる。このため、高感度化及び入射角依存性の改善が可能となる。また、凹部を埋め込むように積層カラーフィルタを形成するのであるから、それぞれの光電変換素子に対応したカラーフィルタ層を寸法精度良く形成することが容易にできる。
101 N型半導体基板
102 P型ウェル
103 光電変換素子
104 ゲート絶縁膜
105 転送電極
106 層間絶縁膜
107 遮光膜
108 表面保護膜
109 染料内添型カラーフィルタ層
109G 緑色染料内添型カラーフィルタ層
109B 青色染料内添型カラーフィルタ層
109R 赤色染料内添型カラーフィルタ層
110 顔料分散型カラーフィルタ層
110G 緑色顔料分散型カラーフィルタ層
110B 青色顔料分散型カラーフィルタ層
110R 赤色顔料分散型カラーフィルタ層
111 透明平坦化膜
112 マイクロレンズ
120 凹部
Claims (6)
- 基板上に、光を電荷に変換する光電変換素子を形成する工程と、
前記光電変換素子上に、色分解を行なう積層構造を有する積層カラーフィルタを形成する工程とを備える固体撮像装置の製造方法であって、
前記積層カラーフィルタを形成する工程は、
基板上に、染料内添型の材料からなる第1の材料膜を形成する工程と、
前記第1の材料膜上に、顔料分散型の材料からなる第2の材料膜を形成する工程と、
前記第1の材料膜及び前記第2の材料膜について、同時に露光し、その後現像する工程とを含むことを特徴とする固体撮像装置の製造方法。 - 請求項1において、
前記光電変換素子を形成する工程の後、前記積層カラーフィルタを形成する工程よりも前に、
前記基板上に、前記光電変換素子において生成した電荷を転送するための電荷転送部を形成する工程を更に備え、
前記電荷転送部は、前記光電変換素子上に凹部が形成されるように設けると共に、
前記積層カラーフィルタを形成する工程において、前記凹部を埋め込むように前記積層カラーフィルタを形成することを特徴とする固体撮像装置の製造方法。 - 請求項1又は2において、
前記第1の材料膜の厚さは、前記第2の材料膜の厚さよりも厚いことを特徴とする固体撮像装置の製造方法。 - 請求項1〜3のいずれか一つにおいて、
前記第1の材料膜の屈折率は、前記第2の材料膜の屈折率よりも小さいことを特徴とする固体撮像装置の製造方法。 - 請求項1〜4のいずれか一つにおいて、
前記積層カラーフィルタを形成する工程の後に、前記積層カラーフィルタ上に、平坦化のための透明膜を形成する工程を更に備え、
前記透明膜の屈折率は、前記積層カラーフィルタの屈折率よりも小さいことを特徴とする固体撮像装置の製造方法。 - 請求項5において、
前記透明膜を形成する工程の後に、前記透明膜上に、集光のためのマイクロレンズを形成する工程を更に備え、
前記マイクロレンズの屈折率は、前記透明膜の屈折率よりも大きいことを特徴とする固体撮像装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005046811A JP4623641B2 (ja) | 2005-02-23 | 2005-02-23 | 固体撮像装置の製造方法 |
US11/240,533 US7791659B2 (en) | 2005-02-23 | 2005-10-03 | Solid state imaging device and method for producing the same |
CNB2006100014368A CN100472792C (zh) | 2005-02-23 | 2006-01-17 | 固态摄像器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005046811A JP4623641B2 (ja) | 2005-02-23 | 2005-02-23 | 固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006237122A JP2006237122A (ja) | 2006-09-07 |
JP4623641B2 true JP4623641B2 (ja) | 2011-02-02 |
Family
ID=36912305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005046811A Expired - Fee Related JP4623641B2 (ja) | 2005-02-23 | 2005-02-23 | 固体撮像装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7791659B2 (ja) |
JP (1) | JP4623641B2 (ja) |
CN (1) | CN100472792C (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4623641B2 (ja) * | 2005-02-23 | 2011-02-02 | パナソニック株式会社 | 固体撮像装置の製造方法 |
KR100720468B1 (ko) * | 2005-12-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US20070238035A1 (en) * | 2006-04-07 | 2007-10-11 | Micron Technology, Inc. | Method and apparatus defining a color filter array for an image sensor |
KR101176545B1 (ko) * | 2006-07-26 | 2012-08-28 | 삼성전자주식회사 | 마이크로 렌즈의 형성방법과 마이크로 렌즈를 포함한이미지 센서 및 그의 제조방법 |
US8610806B2 (en) * | 2006-08-28 | 2013-12-17 | Micron Technology, Inc. | Color filter array, imagers and systems having same, and methods of fabrication and use thereof |
KR100776159B1 (ko) * | 2006-08-31 | 2007-11-12 | 동부일렉트로닉스 주식회사 | 이미지 센서 소자의 컬러필터 제조 방법 |
US20080088759A1 (en) * | 2006-10-02 | 2008-04-17 | Yuka Utsumi | Liquid Crystal Display Device |
KR101447044B1 (ko) * | 2006-10-31 | 2014-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
KR100883038B1 (ko) * | 2007-10-15 | 2009-02-09 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
JP2009224980A (ja) * | 2008-03-14 | 2009-10-01 | Panasonic Corp | 固体撮像装置及びその製造方法 |
JP2009252973A (ja) * | 2008-04-04 | 2009-10-29 | Panasonic Corp | 固体撮像素子およびその製造方法 |
JP5249994B2 (ja) * | 2009-08-24 | 2013-07-31 | シャープ株式会社 | 半導体光検出素子および半導体装置 |
JP2011221515A (ja) * | 2010-03-23 | 2011-11-04 | Fujifilm Corp | カラーフィルタ及び電子表示装置 |
JP5612894B2 (ja) * | 2010-04-12 | 2014-10-22 | オリンパス株式会社 | 撮像装置 |
JPWO2012073402A1 (ja) * | 2010-12-01 | 2014-05-19 | パナソニック株式会社 | 固体撮像装置およびその製造方法 |
FR2969820B1 (fr) * | 2010-12-23 | 2013-09-20 | St Microelectronics Sa | Capteur d'image éclairé par la face avant a faible diaphotie |
US8767108B2 (en) | 2011-03-14 | 2014-07-01 | Sony Corporation | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
US8742525B2 (en) * | 2011-03-14 | 2014-06-03 | Sony Corporation | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
TW201921662A (zh) | 2012-05-30 | 2019-06-01 | 日商新力股份有限公司 | 攝像元件、攝像裝置、製造裝置及方法 |
JP6003316B2 (ja) * | 2012-07-12 | 2016-10-05 | ソニー株式会社 | 固体撮像装置、電子機器 |
KR102257137B1 (ko) | 2013-03-26 | 2021-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 화합물, 유기 화합물, 디스플레이 모듈, 조명 모듈, 발광 장치, 표시 장치, 조명 장치 및 전자 기기 |
US9645075B2 (en) * | 2013-11-26 | 2017-05-09 | nanoLambda Korea | Multispectral imager with hybrid double layer filter array |
TWI629517B (zh) | 2013-12-20 | 2018-07-11 | 德商首德公司 | Optical filter |
US9953911B2 (en) | 2016-07-01 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out package structure and method |
JP7498113B2 (ja) | 2018-09-20 | 2024-06-11 | 株式会社半導体エネルギー研究所 | 有機化合物、発光デバイス、発光装置、電子機器、および照明装置 |
US10955597B2 (en) | 2019-01-04 | 2021-03-23 | Visera Technologies Company Limited | Optical devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002184575A (ja) * | 2000-12-11 | 2002-06-28 | Tdk Corp | 有機elディスプレイ装置 |
JP2004333818A (ja) * | 2003-05-07 | 2004-11-25 | Fujifilm Arch Co Ltd | カラーフィルタ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH052106A (ja) * | 1991-06-25 | 1993-01-08 | Dainippon Printing Co Ltd | カラーフイルター |
JPH055802A (ja) * | 1991-06-27 | 1993-01-14 | Dainippon Printing Co Ltd | カラーフイルター |
JP3259059B2 (ja) * | 1991-10-18 | 2002-02-18 | 大日本印刷株式会社 | カラーフィルター |
JPH085823A (ja) * | 1994-06-15 | 1996-01-12 | Toppan Printing Co Ltd | カラーフィルターの製造方法 |
JP3159171B2 (ja) * | 1998-06-05 | 2001-04-23 | 日本電気株式会社 | 固体撮像装置 |
US6137634A (en) * | 1999-02-01 | 2000-10-24 | Intel Corporation | Microlens array |
US7502058B2 (en) * | 2003-06-09 | 2009-03-10 | Micron Technology, Inc. | Imager with tuned color filter |
JP4623641B2 (ja) * | 2005-02-23 | 2011-02-02 | パナソニック株式会社 | 固体撮像装置の製造方法 |
-
2005
- 2005-02-23 JP JP2005046811A patent/JP4623641B2/ja not_active Expired - Fee Related
- 2005-10-03 US US11/240,533 patent/US7791659B2/en not_active Expired - Fee Related
-
2006
- 2006-01-17 CN CNB2006100014368A patent/CN100472792C/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002184575A (ja) * | 2000-12-11 | 2002-06-28 | Tdk Corp | 有機elディスプレイ装置 |
JP2004333818A (ja) * | 2003-05-07 | 2004-11-25 | Fujifilm Arch Co Ltd | カラーフィルタ |
Also Published As
Publication number | Publication date |
---|---|
US7791659B2 (en) | 2010-09-07 |
US20060187381A1 (en) | 2006-08-24 |
JP2006237122A (ja) | 2006-09-07 |
CN1825608A (zh) | 2006-08-30 |
CN100472792C (zh) | 2009-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4623641B2 (ja) | 固体撮像装置の製造方法 | |
KR100654143B1 (ko) | 고체 촬상 장치, 고체 촬상 장치의 제조 방법, 카메라 | |
JP4822683B2 (ja) | 固体撮像装置およびその製造方法 | |
JP4598680B2 (ja) | 固体撮像装置及びカメラ | |
US7777260B2 (en) | Solid-state imaging device | |
KR102471261B1 (ko) | 고체 촬상 소자 및 고체 촬상 소자의 제조 방법, 전자 기기 | |
WO2010010652A1 (ja) | 固体撮像装置とその製造方法 | |
US7777794B2 (en) | Solid-state imaging device and method of manufacturing the same | |
US20070102716A1 (en) | Image sensor and fabricating method thereof | |
JP2009224980A (ja) | 固体撮像装置及びその製造方法 | |
JP4905760B2 (ja) | カラーフィルタの製造方法、カラーフィルタ、固体撮像素子の製造方法およびこれを用いた固体撮像素子 | |
JP4181487B2 (ja) | 固体撮像装置とその製造方法 | |
KR20050021969A (ko) | 고체 촬상 장치 및 그 제조 방법 | |
JP2011009389A (ja) | 固体撮像装置およびその製造方法 | |
JP5564751B2 (ja) | イメージセンサーの製造方法 | |
JP2008210904A (ja) | 固体撮像装置とその製造方法 | |
JP2005033074A (ja) | 固体撮像装置およびその製造方法 | |
JP2007019424A (ja) | 固体撮像素子 | |
JP2006216904A (ja) | カラー固体撮像素子及びその製造方法 | |
JP2000156485A (ja) | 固体撮像素子およびその製造方法 | |
JP2011165791A (ja) | 固体撮像素子およびその製造方法 | |
JP5353356B2 (ja) | 固体撮像素子及びその製造方法 | |
JP2007324481A (ja) | 固体撮像装置及びその製造方法 | |
KR100718769B1 (ko) | 이미지 센서 및 그 제조 방법 | |
KR20030001098A (ko) | 고체촬상소자의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070914 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100720 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100803 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100831 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101005 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101029 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131112 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |