CN107039536B - 太阳能电池及其制造方法 - Google Patents
太阳能电池及其制造方法 Download PDFInfo
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- CN107039536B CN107039536B CN201710018628.8A CN201710018628A CN107039536B CN 107039536 B CN107039536 B CN 107039536B CN 201710018628 A CN201710018628 A CN 201710018628A CN 107039536 B CN107039536 B CN 107039536B
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- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020160003753A KR102526398B1 (ko) | 2016-01-12 | 2016-01-12 | 태양 전지 및 이의 제조 방법 |
KR10-2016-0003753 | 2016-01-12 |
Publications (2)
Publication Number | Publication Date |
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CN107039536A CN107039536A (zh) | 2017-08-11 |
CN107039536B true CN107039536B (zh) | 2021-04-20 |
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Application Number | Title | Priority Date | Filing Date |
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CN201710018628.8A Active CN107039536B (zh) | 2016-01-12 | 2017-01-11 | 太阳能电池及其制造方法 |
Country Status (5)
Country | Link |
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US (1) | US20170200850A1 (zh) |
EP (1) | EP3193376B1 (zh) |
JP (1) | JP6538095B2 (zh) |
KR (1) | KR102526398B1 (zh) |
CN (1) | CN107039536B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014110262A1 (de) * | 2014-07-22 | 2016-01-28 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung eines Rückseitenkontaktsystems für eine Silizium-Dünnschicht-Solarzelle |
US9966301B2 (en) | 2016-06-27 | 2018-05-08 | New Fab, LLC | Reduced substrate effects in monolithically integrated RF circuits |
US10062636B2 (en) | 2016-06-27 | 2018-08-28 | Newport Fab, Llc | Integration of thermally conductive but electrically isolating layers with semiconductor devices |
DE102017204109B4 (de) * | 2017-03-13 | 2019-03-14 | Gühring KG | Verwendung einer mit Fremdatomen dotierten Diamantschicht zur Erfassung des Abnutzungsgrades einer undotierten diamantenen Funktionsschicht eines Werkzeugs |
KR102350960B1 (ko) * | 2019-04-25 | 2022-01-14 | 엘지전자 주식회사 | 태양전지의 제조 방법 |
KR102666012B1 (ko) * | 2019-08-29 | 2024-05-16 | 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이의 제조 방법 |
CN112447867A (zh) * | 2019-09-02 | 2021-03-05 | 财团法人金属工业研究发展中心 | 太阳能电池结构及其制作方法 |
CN112635592A (zh) * | 2020-12-23 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制作方法 |
CN113299772A (zh) * | 2021-06-04 | 2021-08-24 | 浙江爱旭太阳能科技有限公司 | 一种选择性接触区域掩埋型太阳能电池及其背面接触结构 |
CN113299770A (zh) * | 2021-06-04 | 2021-08-24 | 浙江爱旭太阳能科技有限公司 | 一种选择性接触区域掩埋型太阳能电池及其背面接触结构 |
CN116525689A (zh) | 2021-08-26 | 2023-08-01 | 上海晶科绿能企业管理有限公司 | 太阳能电池及其制作方法、光伏组件 |
CN114784148B (zh) * | 2022-06-15 | 2022-09-23 | 浙江晶科能源有限公司 | 太阳能电池的制备方法及太阳能电池、光伏组件 |
CN117712199A (zh) | 2022-09-08 | 2024-03-15 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
CN117238987A (zh) | 2022-09-08 | 2023-12-15 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
CN118099229A (zh) * | 2023-10-08 | 2024-05-28 | 晶科能源(海宁)有限公司 | 太阳能电池、光伏组件 |
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US5397400A (en) * | 1992-07-22 | 1995-03-14 | Mitsubishi Denki Kabushiki Kaisha | Thin-film solar cell |
US5403771A (en) * | 1990-12-26 | 1995-04-04 | Canon Kabushiki Kaisha | Process for producing a solar cell by means of epitaxial growth process |
CN102157578A (zh) * | 2010-12-30 | 2011-08-17 | 友达光电股份有限公司 | 太阳能电池及其制作方法 |
JP2015142139A (ja) * | 2014-01-29 | 2015-08-03 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
CN105322042A (zh) * | 2014-07-28 | 2016-02-10 | Lg电子株式会社 | 太阳能电池及其制造方法 |
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- 2017-01-11 CN CN201710018628.8A patent/CN107039536B/zh active Active
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Also Published As
Publication number | Publication date |
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KR102526398B1 (ko) | 2023-04-27 |
EP3193376B1 (en) | 2019-03-20 |
JP2017126748A (ja) | 2017-07-20 |
JP6538095B2 (ja) | 2019-07-03 |
EP3193376A1 (en) | 2017-07-19 |
KR20170084564A (ko) | 2017-07-20 |
CN107039536A (zh) | 2017-08-11 |
US20170200850A1 (en) | 2017-07-13 |
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