CN107026184B - 集成晶片结构及其形成方法 - Google Patents
集成晶片结构及其形成方法 Download PDFInfo
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- CN107026184B CN107026184B CN201710061474.0A CN201710061474A CN107026184B CN 107026184 B CN107026184 B CN 107026184B CN 201710061474 A CN201710061474 A CN 201710061474A CN 107026184 B CN107026184 B CN 107026184B
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- 238000000034 method Methods 0.000 title claims description 80
- 239000004020 conductor Substances 0.000 claims abstract description 195
- 239000004065 semiconductor Substances 0.000 claims abstract description 116
- 230000005855 radiation Effects 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims description 139
- 229910052751 metal Inorganic materials 0.000 claims description 105
- 239000002184 metal Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 77
- 230000000873 masking effect Effects 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 230000001965 increasing effect Effects 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 314
- 230000009977 dual effect Effects 0.000 description 33
- 230000008569 process Effects 0.000 description 31
- 238000005137 deposition process Methods 0.000 description 12
- 239000003989 dielectric material Substances 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- -1 oxide Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
- H01L2224/081—Disposition
- H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/08137—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
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- H01L2224/48451—Shape
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662288738P | 2016-01-29 | 2016-01-29 | |
| US62/288,738 | 2016-01-29 | ||
| US15/213,519 US10297631B2 (en) | 2016-01-29 | 2016-07-19 | Metal block and bond pad structure |
| US15/213,519 | 2016-07-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107026184A CN107026184A (zh) | 2017-08-08 |
| CN107026184B true CN107026184B (zh) | 2020-04-21 |
Family
ID=59386198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710061474.0A Active CN107026184B (zh) | 2016-01-29 | 2017-01-26 | 集成晶片结构及其形成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10297631B2 (ja) |
| JP (1) | JP6429209B2 (ja) |
| KR (1) | KR101920967B1 (ja) |
| CN (1) | CN107026184B (ja) |
| TW (1) | TWI622164B (ja) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10038025B2 (en) * | 2015-12-29 | 2018-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Via support structure under pad areas for BSI bondability improvement |
| US10460987B2 (en) * | 2017-05-09 | 2019-10-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package device with integrated antenna and manufacturing method thereof |
| JP6976744B2 (ja) * | 2017-06-29 | 2021-12-08 | キヤノン株式会社 | 撮像装置、撮像システム、および、移動体 |
| US10090342B1 (en) | 2017-08-01 | 2018-10-02 | Semiconductor Components Industries, Llc | Stacked image sensor capacitors and related methods |
| CN107887401A (zh) * | 2017-10-27 | 2018-04-06 | 德淮半导体有限公司 | 背照式图像传感器及其制造方法 |
| CN108428708A (zh) * | 2018-03-26 | 2018-08-21 | 武汉新芯集成电路制造有限公司 | 图像传感器及其形成方法 |
| US20200035641A1 (en) * | 2018-07-26 | 2020-01-30 | Invensas Bonding Technologies, Inc. | Post cmp processing for hybrid bonding |
| CN110875202B (zh) * | 2018-09-04 | 2021-11-09 | 中芯集成电路（宁波）有限公司 | 晶圆级封装方法以及封装结构 |
| US11227836B2 (en) | 2018-10-23 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad structure for enhanced bondability |
| CN111244072B (zh) * | 2020-02-05 | 2024-05-24 | 长江存储科技有限责任公司 | 半导体器件 |
| JP2021158320A (ja) * | 2020-03-30 | 2021-10-07 | キヤノン株式会社 | 半導体装置及びその製造方法、機器 |
| US11244914B2 (en) * | 2020-05-05 | 2022-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad with enhanced reliability |
| JP7423462B2 (ja) * | 2020-07-13 | 2024-01-29 | 新光電気工業株式会社 | 実装基板及び半導体装置 |
| US11658158B2 (en) * | 2020-09-03 | 2023-05-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Die to die interface circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102404514A (zh) * | 2010-09-15 | 2012-04-04 | 索尼公司 | 固体摄像器件和电子装置 |
| CN102629616A (zh) * | 2011-02-08 | 2012-08-08 | 索尼公司 | 固态成像装置、其制造方法及电子设备 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2841439B2 (ja) * | 1989-03-24 | 1998-12-24 | 富士通株式会社 | 半導体装置の製造方法 |
| JPH0493020A (ja) * | 1990-08-09 | 1992-03-25 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPH04171923A (ja) * | 1990-11-06 | 1992-06-19 | Matsushita Electron Corp | 薄膜形成装置および薄膜形成方法 |
| JP2000269473A (ja) * | 1999-03-17 | 2000-09-29 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP4604301B2 (ja) * | 1999-04-28 | 2011-01-05 | 株式会社デンソー | 光センサ |
| JP4835710B2 (ja) * | 2009-03-17 | 2011-12-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
| FR2949173A1 (fr) | 2009-08-12 | 2011-02-18 | St Microelectronics Sa | Capteur d'images eclaire par la face arriere protege des rayons infrarouges |
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| KR20170090983A (ko) | 2017-08-08 |
| CN107026184A (zh) | 2017-08-08 |
| US20180342552A1 (en) | 2018-11-29 |
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| US11088192B2 (en) | 2021-08-10 |
| US10297631B2 (en) | 2019-05-21 |
| JP6429209B2 (ja) | 2018-11-28 |
| US20170221950A1 (en) | 2017-08-03 |
| TW201737480A (zh) | 2017-10-16 |
| KR101920967B1 (ko) | 2018-11-21 |
| TWI622164B (zh) | 2018-04-21 |
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