CN106841791A - Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors - Google Patents
Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors Download PDFInfo
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- CN106841791A CN106841791A CN201710052678.8A CN201710052678A CN106841791A CN 106841791 A CN106841791 A CN 106841791A CN 201710052678 A CN201710052678 A CN 201710052678A CN 106841791 A CN106841791 A CN 106841791A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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Abstract
Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention are made up of co-planar waveguide, slot-coupled structure, phase shifter, single-pole double-throw switch (SPDT), Wilkinson power splitters, Wilkinson work(clutch and direct-type thermoelectric (al) type power sensor, total is made based on high resistant Si substrates, four slot-coupled structures are provided with altogether, two slot-coupled structures of top realize the frequency measurement of signal, two slot-coupled structures of lower section realize the phase measurement of signal, and one section of phase shifter is provided between front and rear gap；Wilkinson power splitters and Wilkinson work(clutch are made up of co-planar waveguide, asymmetrical coplanar stripline and an isolation resistance；Direct-type thermoelectric (al) type power sensor is mainly made up of co-planar waveguide, two thermocouples and a capacitance, and thermocouple is composed in series by metal arm and semiconductor arm, and it can carry out self-heating and complete heat to electricity conversion.These simple structures efficiently realize the phase measurement of millimeter wave under unknown frequency, substantially increase the efficiency of signal detector.
Description
Technical field
The present invention proposes silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors, belongs to microelectronics machine
The technical field of tool system (MEMS).
Background technology
With the sustainable development of electronic information electronic science and technology, people have had come to the very diversification of an information
In the epoch, various information communication devices are all flooded with around people, said after all, almost all of communication information sets
The standby detection and treatment all be unableing to do without to signal, thus signal detection be also always people increasingly constantly study it is important in
Hold.At present, most of signals of people's research are concentrated mainly on low frequency and some high frequency bands, and the signal for extremely high frequency is studied
Less, millimeter-wave signal is a kind of positioned at microwave and the extremely high frequency signal of far infrared wave overlapping region, with to the resource of frequency range
Continually develop, the signal detection technique of millimeter wave has also been put on epoch wonderful stage.It is well known that the three of a signal big parameters
It is frequency, phase and power, the phase-detection of wherein millimeter-wave signal is very important a part of content, but current phase
The usual complex structure of bit detector, is not easy to integrated, and frequency is also unable to reach extremely high frequency, the phase-detection of usual millimeter wave
It is divided into the detection under given frequency and under unknown frequency, in practical situations both, the frequency of a unknown signaling is also to know
, therefore phase detectors under unknown frequency must first measure its frequency, determine the frequency of reference signal, and phase is finally measured again
Position.
In co-planar waveguide slot-coupled structure, Wilkinson power splitters, Wilkinson work(clutch and direct-type thermoelectricity
On the Research foundation of formula power sensor, the present invention devises a kind of millimeter wave under unknown frequency on high resistant Si substrates and exists
Phase of line detector, one is integrated in present invention utilizes co-planar waveguide slot-coupled structure by the frequency and phase-detection of millimeter wave
Rise, with potential value higher.
The content of the invention
Technical problem：It is an object of the invention to provide a kind of silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase
Detector, present invention employs simple novel co-planar waveguide slot-coupled structure, in terms of power distribution and power combing then
Common Wilkinson power splitters and Wilkinson work(clutch structures is employed, is then employed in terms of the measurement of composite signal
Direct-type thermoelectric (al) type power sensor.
Technical scheme：Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention are by coplanar
Waveguide, slot-coupled structure, No. two slot-coupled structures, No. three slot-coupled structures, No. four slot-coupled structures, a phase shifts
Device, single-pole double-throw switch (SPDT), No. two single-pole double-throw switch (SPDT)s, Wilkinson power splitters, three Wilkinson work(clutchs
And five direct-type thermoelectric (al) type power sensors are constituted, the annexation of concrete structure is as follows：First port is defeated signal
Enter end, a slot-coupled structure and No. two slot-coupled structures are located at co-planar waveguide upside ground wire, No. three slot-coupled structures
Co-planar waveguide downside ground wire is then located at No. four slot-coupled structures, these two pair gap is symmetrical on center signal line, they it
Between separated by a phase shifter, look first at frequency detection module, a slot-coupled structure is connected to second port, the second end
Mouth is connected with the input of a single-pole double-throw switch (SPDT), and the output end of a single-pole double-throw switch (SPDT) is connected respectively to No. one
Wilkinson work(clutch and a direct-type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures are connected to the 3rd
Port, the 3rd port is connected with the input of No. two single-pole double-throw switch (SPDT)s, and the output end of No. two single-pole double-throw switch (SPDT)s is connected respectively
To a Wilkinson work(clutch and No. two direct-type thermoelectric (al) type power sensors, and an output for Wilkinson work(clutchs
End is connected to No. three direct-type thermoelectric (al) type power sensors；Phase detecting module, No. three slot-coupled structures and the 4th end are seen again
Mouth is connected, and the 4th port is connected to No. two Wilkinson work(clutchs, and No. four slot-coupled structures are connected with fifth port, and the 5th
Port is connected to No. three Wilkinson work(clutchs, and reference signal is input into by No. four inputs of Wilkinson power splitters, and four
The output end of number Wilkinson power splitters is connected respectively to No. two Wilkinson work(clutchs and No. three Wilkinson work(clutchs,
Then, No. two output ends of Wilkinson work(clutchs connect No. four direct-type thermoelectric (al) type power sensors, No. three Wilkinson
The output end of work(clutch connects No. five direct-type thermoelectric (al) type power sensors, and the 6th port is connected to subsequent process circuit.
Firstly, for the frequency detection module of millimeter wave, it be mainly by two slot-coupled structures, one section of phase shifter,
Two single-pole double-throw switch (SPDT)s, a Wilkinson work(clutch and a direct-type work(thermoelectric (al) type rate sensor are constituted, millimeter
Ripple signal first passes around the signal P that first slot-coupled structure Coupling goes out fraction1, then by after one section of phase shifter again
Go out the signal P of part by another slot-coupled structure Coupling2, certain phase is just generated between two such coupled signal
DifferenceActually this section phase shifter is exactly one section of coplanar waveguide transmission line, and its length is set to centre frequency f0It is 35GHz
Locate the 1/4 of wavelength, now phase differenceIt is exactly 90 °, but when frequency f changes, phase differenceIt is the function of frequency f：
Wherein f is the frequency of millimeter-wave signal, and c is the light velocity, εerIt is the relative dielectric constant of transmission line, Δ L is phase shifter
Length, as long as therefore measuringValue, can just obtain the size of frequency f.Then by two coupled signal P1、P2By
Wilkinson work(clutchs are synthesized, then are gone to detect composite signal power P with direct-type thermoelectric (al) type power sensorsSize,
The power P of composite signalsIt is on phase differenceTrigonometric function relation：
Due to coupled signal P1、P2Size it is unknown, therefore be employed herein two single-pole double-throw switch (SPDT)s and be coupled out two
The small-signal for coming takes the lead in carrying out power detection, obtains its watt level, then carries out power conjunction by Wilkinson work(clutch again
Into then just calculating the size of frequency f by formula (2).Note phase difference hereSimply between two coupling small-signals
Phase difference, be not the phase Φ of former millimeter-wave signal, in addition it is also necessary to which former millimeter wave is accurately determined by phase detecting module
The phase Φ of signal.
Secondly, it is also similarly to go out part by two slot-coupled structure Couplings for the phase detecting module of millimeter wave
Small-signal P3And P4, because gap size is identical, so their watt level is equal to the coupling small-signal P for measuring before1With
P2, their initial phase is all Φ, simply have propagated phase wherein second slot-coupled signal moreReference signal PcBy
Wilkinson power splitters resolve into the same signal of left and right two-way, the left side signal and first slot-coupled signal all the way
Power combing is carried out, obtains synthesizing power PL, it is the trigonometric function relation on phase Φ；And the right signal and second all the way
Individual slot-coupled signal carries out power combing, obtains synthesizing power PR, it is on phaseTrigonometric function relation；
Wherein P3=P1、P4=P2, with reference to the two relational expressions, the size of phase Φ can be not only obtained, can also obtain
The advanced or lagged relationship of phase.
Beneficial effect：In the present invention, the slot-coupled structure of simple novelty is taken, this slot-coupled structure can
The energy of electromagnetic field propagated in co-planar waveguide is coupled out fraction, the small-signal that is coupled out using this detects former millimeter wave
The frequency and phase size of signal, simultaneously because the signal energy being coupled out is very small, therefore almost to former millimeter-wave signal shadow
Ring little, former millimeter-wave signal can continue back-propagation, the very effective phase for realizing millimeter-wave signal under unknown frequency
Position detection, substantially increases the efficiency of signal detector, with potential using value higher.
Brief description of the drawings
Fig. 1 is the top view of silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
Fig. 2 be silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention in single-pole double throw open
The top view of pass
Fig. 3 be silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention in single-pole double throw open
Close the profile in AA ' directions
Fig. 4 is Wilkinson in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The top view of power splitter and Wilkinson work(clutchs
Fig. 5 is direct-type thermoelectricity in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The top view of formula power sensor
Fig. 6 is direct-type thermoelectricity in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The profile in formula power sensor AA ' directions
Fig. 7 is direct-type thermoelectricity in silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The profile in formula power sensor BB ' directions
Figure includes：Co-planar waveguide 1, slot-coupled structure 2-1, slot-coupled structure 2-2, slot-coupled structure 2-3, seam
Gap coupled structure 2-4, phase shifter 3, frequency detection module 4, phase detecting module 5, isolation resistance 6, asymmetrical coplanar stripline 7,
Air bridges 8, metal arm 9, P-type semiconductor arm 10, Ohmic contact 11, hot junction 12, cold end 13, capacitance 14, output electrode 15,
Capacitance bottom crown 16, Si3N4Dielectric layer 17, capacitance top crown 18, substrate membrane structure 19, high resistant Si substrates 20, SiO2
Layer 21, a single-pole double-throw switch (SPDT) 22, No. two single-pole double-throw switch (SPDT)s 23, switch beam 24, anchor area 25, switch pull-down electrode plate 26,
First port 1-1, second port 1-2, the 3rd port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6.
Specific embodiment
Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention are based on high resistant Si substrates
20 making, be by 1, slot-coupled structure 2-1 of co-planar waveguide, No. two slot-coupled structure 2-2, No. three slot-coupled knots
Structure 2-3, No. four slot-coupled structure 2-4, the single-pole double-throw switch (SPDT)s 23, of single-pole double-throw switch (SPDT) 22, two of phase shifter 3,
Wilkinson power splitters, three Wilkinson work(clutchs and five direct-type thermoelectric (al) type power sensors are constituted.
Single-pole double-throw switch (SPDT) 22 is by co-planar waveguide 1, anchor area 25, Si3N4Dielectric layer 17, switch pull-down electrode plate 26 and open
The composition of beam 24 is closed, co-planar waveguide 1 is connected in anchor area 25, and anchor area 25 is connected with the switch beam 24 in two different branch,
Wherein one branch road connects direct-type thermoelectric (al) type power sensor, and another branch road connects the input of Wilkinson work(clutchs,
The lower section of switch beam 24 has a layer of air gap, and switch pull-down electrode plate 26 is mounted with this air gap, and is opening
Close and be also covered with one layer of Si on pull-down electrode plate 263N4Dielectric layer 17.
The structure of Wilkinson power splitters and Wilkinson work(clutchs is identical, mainly by co-planar waveguide 1, asymmetric
Coplanar striplines 7 and isolation resistance 6 are constituted, and two of which length identical asymmetrical coplanar stripline 7 can be by co-planar waveguide 1
Millimeter-wave signal is divided into equal two parts, and isolation resistance 6 is located at two ends of asymmetrical coplanar stripline 7.
Heat to electricity conversion is realized using direct-type thermoelectric (al) type power sensor, it is mainly by co-planar waveguide 1, metal arm 9, P
Type semiconductor arm 10 and a capacitance 14 are constituted, two thermocouples that wherein metal arm 9 and P-type semiconductor arm 10 are constituted
It is connected in parallel, and co-planar waveguide 1 is directly connected with one end of the two thermocouples.
The annexation of concrete structure is as follows：First port 1-1 is signal input part, a slot-coupled structure 2-1 and
No. two slot-coupled structure 2-2 are located at the upside ground wire of co-planar waveguide 1, No. three slot-coupled structure 2-3 and No. four slot-coupled knots
Structure 2-4 is then located at the downside ground wire of co-planar waveguide 1, and these two pair gap is symmetrical on center signal line, by a phase shift between them
Device 3 separates, and looks first at frequency detection module 4, and a slot-coupled structure 2-1 is connected to second port 1-2, second port 1-
2 are connected with the input of a single-pole double-throw switch (SPDT) 22, and the output end of a single-pole double-throw switch (SPDT) 22 is connected respectively to No. one
Wilkinson work(clutch and a direct-type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structure 2-2 are connected to
3rd port 1-3, the 3rd port 1-3 is connected with the input of No. two single-pole double-throw switch (SPDT)s 23, No. two single-pole double-throw switch (SPDT)s 23
Output end is connected respectively to a Wilkinson work(clutch and No. two direct-type thermoelectric (al) type power sensors, and No. one
The output end of Wilkinson work(clutchs is connected to No. three direct-type thermoelectric (al) type power sensors；Phase detecting module 5, three are seen again
Number slot-coupled structure 2-3 is connected with the 4th port 1-4, and the 4th port 1-4 is connected to No. two Wilkinson work(clutchs, No. four
Slot-coupled structure 2-4 is connected with fifth port 1-5, and fifth port 1-5 is connected to No. three Wilkinson work(clutchs, with reference to letter
Number it is input into by the inputs of No. four Wilkinson power splitters, the output end of No. four Wilkinson power splitters is connected respectively to two
Number Wilkinson work(clutch and No. three Wilkinson work(clutchs, then, No. two output ends connections four of Wilkinson work(clutchs
Number direct-type thermoelectric (al) type power sensor, No. three output ends of Wilkinson work(clutchs connect No. five direct-type thermoelectric (al) type power
Sensor, subsequent process circuit is connected at the 6th port 1-6.
The preparation method of silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention is：
1) high resistant Si substrates 20 (4000 Ω cm) is prepared, thickness is 400um；
2) one layer of SiO of thermal oxide growth2Layer 21, thickness is 1.2um；
3) one layer of polysilicon is deposited, (doping concentration is 10 to p-type ion implanting15cm-2), make Wilkinson work(to reach
Divide the resistivity requirement of the isolation resistance 6 and thermo-electric metal arm 9 of device.
4) p-type ion implanting is carried out again to the place of thermocouple P-type semiconductor arm 10 to be made using mask, is reached
The resistivity requirement of P-type semiconductor arm 10；
5) photoresist is coated, photoetching is carried out to polysilicon layer, ultimately form the metal arm 9 and P of isolation resistance 6, thermocouple
Type semiconductor arm 10；
6) Ohmic contact 11 is made in the metal arm 9 of thermocouple and the junction of P-type semiconductor arm 10；
7) photoresist, removal transmission line, capacitance 14, output electrode 15 and switch pull-down electrode plate are coated on substrate
Photoresist at 26, evaporates one layer of Seed Layer Ti, and thickness isThen ground floor gold is prepared, thickness is 0.3um, by stripping
Photoresist that separating process removal retains, the metal level in related removal face on a photoresist preliminarily forms transmission line, capacitance
Bottom crown 16, output electrode 15 and switch pull-down electrode plate 26；
8) on the Si substrates that preceding step treatment is obtained, one layer is generated by PECVDThick Si3N4Dielectric layer,
Photoetching Si3N4Dielectric layer, only retains the Si that make at capacitance 14, air bridges 8 and switch beam 243N4Dielectric layer 17；
9) one layer of 1.6 polyimide sacrificial layer of μ m-thick is deposited, it is desirable to fill up all pits；Photoetching polyimides is sacrificed
Layer, only retains the polyimide sacrificial layer of air bridges 8 and the lower section of switch beam 24；
10) photoresist is coated, removal preparation makes transmission line, capacitance 14, output electrode 15, air bridges 8 and switch
The photoresist of Liang24Chu, evaporates one layer of Seed Layer Ti, and thickness isSecond layer gold is prepared, thickness is 2um, finally, removal is protected
The photoresist for staying, forms transmission line, the top crown 18 of capacitance, output electrode 15, air bridges 8 and switch beam 24；
11) in the backside coating photoresist of substrate, removal preparation forms the photoetching in the place of membrane structure 19 in substrate back
Glue, is that thinning Si substrates are etched below hot junction 12 in thermocouple zone line, forms substrate membrane structure 19, retains and is about 40 μ m-thicks
Membrane structure；
12) polyimide sacrificial layer is discharged, to remove the polyimide sacrificial layer of air bridges 8 and the lower section of switch beam 24；Most
Afterwards, soak 5 minutes in deionized water, absolute ethyl alcohol dehydration is volatilized under normal temperature, is dried.
Present invention be distinguished in that：
Present invention employs novel slot-coupled structure, this slot-coupled structure will can be propagated in co-planar waveguide
Energy of electromagnetic field be coupled out a part, so as to detect the frequency of former millimeter-wave signal using the part small-signal that this is coupled out
With phase size, it is achieved thereby that the millimeter wave phase-detection under unknown frequency；Power divider and power combiner are all used
The structure of Wilkinson power splitters and Wilkinson work(clutchs realizes dividing equally or synthesizing for power；As for composite signal
Detection, then realize heat to electricity conversion using direct-type thermoelectric (al) type power sensor.These structures not only simplify circuit layout, drop
Low cost of manufacture, and the detection efficiency of millimeter-wave signal is substantially increased, simultaneously because the signal energy and original that are coupled out
Signal is compared to very small therefore almost little on the influence of former millimeter-wave signal, and former millimeter-wave signal can continue back-propagation and enter
The follow-up processing of circuit of row.
The structure for meeting conditions above is considered as silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase of the invention
Bit detector.
Claims (4)
1. a kind of silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors, it is characterised in that the phase-detection
Device is produced on high resistant Si substrates (20), is by co-planar waveguide (1), slot-coupled structure (2-1), a No. two slot-coupled knots
Structure (2-2), No. three slot-coupled structures (2-3), No. four slot-coupled structures (2-4), phase shifter (3), a single-pole double throws are opened
Close (22), No. two single-pole double-throw switch (SPDT)s (23), a Wilkinson power splitter, three Wilkinson work(clutchs and five straight
Connect formula thermoelectric (al) type power sensor to be constituted, the annexation of concrete structure is as follows：First port (1-1) is signal input part,
A number slot-coupled structure (2-1) and No. two slot-coupled structures (2-2) are located at co-planar waveguide (1) upside ground wire, No. three gaps
Coupled structure (2-3) and No. four slot-coupled structures (2-4) are then located at co-planar waveguide (1) downside ground wire, these two pair gap on
Center signal line is symmetrical, is separated by a phase shifter (3) between them, looks first at frequency detection module (4), a gap coupling
Close structure (2-1) and be connected to second port (1-2), second port (1-2) and an input phase for single-pole double-throw switch (SPDT) (22)
Even, the output end of a single-pole double-throw switch (SPDT) (22) is connected respectively to a Wilkinson work(clutch and a direct-type thermoelectricity
Formula power sensor, likewise, No. two slot-coupled structures (2-2) are connected to the 3rd port (1-3), the 3rd port (1-3) with
No. two inputs of single-pole double-throw switch (SPDT) (23) are connected, and the output end of No. two single-pole double-throw switch (SPDT)s (23) is connected respectively to No. one
Wilkinson work(clutch and No. two direct-type thermoelectric (al) type power sensors, and an output end connection for Wilkinson work(clutchs
To No. three direct-type thermoelectric (al) type power sensors；Phase detecting module (5), No. three slot-coupled structures (2-3) and the 4th are seen again
Port (1-4) is connected, and the 4th port (1-4) is connected to No. two Wilkinson work(clutchs, No. four slot-coupled structures (2-4) with
Fifth port (1-5) is connected, and fifth port (1-5) is connected to No. three Wilkinson work(clutchs, and reference signal passes through No. four
The input input of Wilkinson power splitters, the output end of No. four Wilkinson power splitters is connected respectively to No. two
Wilkinson work(clutch and No. three Wilkinson work(clutchs, then, No. two output ends of Wilkinson work(clutchs connect No. four
Direct-type thermoelectric (al) type power sensor, No. three output ends of Wilkinson work(clutchs connect No. five direct-type thermoelectric (al) type power and pass
Sensor, the 6th port (1-6) place is connected to subsequent process circuit.
2. silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors as claimed in claim 1, its feature exists
In single-pole double-throw switch (SPDT) (22) is by co-planar waveguide (1), anchor area (25), Si3N4Dielectric layer (17), switch pull-down electrode plate (26)
With switch beam (24) composition, co-planar waveguide (1) is connected in anchor area (25), the switch in anchor area (25) and two different branch
Beam (24) is connected, wherein a branch road connection direct-type thermoelectric (al) type power sensor, another branch road connection Wilkinson work(
The input of clutch, switch beam (24) lower section has a layer of air gap, switch is mounted with this air gap drop-down
Battery lead plate (26), and it is also covered with one layer of Si3N4 dielectric layer (17) on switch pull-down electrode plate (26).
3. silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors as claimed in claim 1, its feature exists
In the structure of Wilkinson power splitters and Wilkinson work(clutchs is identical, mainly by co-planar waveguide (1), asymmetric common
Face band line (7) and isolation resistance (6) are constituted, and two of which length identical asymmetrical coplanar stripline (7) can be by co-planar waveguide
(1) millimeter-wave signal on is divided into equal two parts, and isolation resistance (6) is positioned at two ends of asymmetrical coplanar stripline (7)
End.
4. silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors as claimed in claim 1, its feature exists
In, heat to electricity conversion is realized using direct-type thermoelectric (al) type power sensor, it is mainly by co-planar waveguide (1), metal arm (9), p-type
Semiconductor arm (10) and a capacitance (14) are constituted, wherein two of metal arm (9) and P-type semiconductor arm (10) composition
Thermocouple is connected in parallel, and co-planar waveguide (1) is directly connected with one end of the two thermocouples.
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| 焦永昌 等: "基于MEMS技术的差分式微波信号相位检测器", 《东南大学学报》 * |
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