CN106684225A - 封装结构及其制法 - Google Patents

封装结构及其制法 Download PDF

Info

Publication number
CN106684225A
CN106684225A CN201610421876.2A CN201610421876A CN106684225A CN 106684225 A CN106684225 A CN 106684225A CN 201610421876 A CN201610421876 A CN 201610421876A CN 106684225 A CN106684225 A CN 106684225A
Authority
CN
China
Prior art keywords
light
fluorescence coating
preparation
clad
encapsulating structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610421876.2A
Other languages
English (en)
Inventor
凌北卿
刘德忠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CN106684225A publication Critical patent/CN106684225A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/508Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

一种封装结构及其制法,该封装结构包括:发光元件、荧光层、透光层以及反射层,其中该发光元件具有相对的第一表面与第二表面、及邻接该第一表面与该第二表面的侧面;荧光层覆盖该发光元件的该第一表面;透光层覆盖该荧光层,其中该透光层外侧缘形成有一斜面;以及反射层形成于该斜面上,而遮盖该荧光层的外侧缘,以藉由形成于该斜面上的反射层遮盖该荧光层的外侧缘,可避免光线从荧光层的外侧缘外泄出去。

Description

封装结构及其制法
技术领域
本发明有关一种封装结构及其制法,尤指一种可发光的封装结构及其制法。
背景技术
发光二极管(Light Emitting Diode,简称LED)因具有寿命长、体积小、耐震性高及耗电量低等优点,故广泛地应用于照明需求的电子产品中。于工业上、各式电子产品、及生活家电的应用日趋普及。
图1为揭示一种悉知LED封装件的剖面图,该LED封装件1包括有:一透光件16;一荧光层14结合于透光件16上;一发光元件10设置于荧光层14上;一包覆层12设置于荧光层14上,且覆盖发光元件10的侧面。
然而,悉知LED封装件中,当通电后,发光元件10透过荧光层14发射的光线,往往从荧光层14的侧边外泄出,造成大量的光损耗,形成发光效率不佳的缺点,此一问题于透光件16及荧光层14过薄时(约250μm)更显严重。
因此,如何克服悉知技术中的问题,实已成目前亟欲解决的课题。
发明内容
鉴于上述悉知技术的缺失,本发明提供一种封装结构及其制法,可避免光线从荧光层的外侧缘外泄出去。
本发明的封装结构的制法,其包括:提供多个发光元件,并于该些发光元件间形成包覆层,其中,各该发光元件具有相对的第一表面与第二表面、及邻接该第一表面与该第二表面的侧面,且该包覆层覆盖该些发光元件的侧面;形成荧光层于该些多个发光元件的第一表面与该包覆层上;于任二相邻的该发光元件之间的包覆层形成沟槽,且令该沟槽贯穿该包覆层及荧光层;以及形成反射层于该些沟槽的槽壁上。
前述的制法中,该荧光层上还结合有一透光层;该些沟槽还延伸至该透光层。
前述的制法中,还包括沿该些沟槽进行切单制程。
本发明还提供一种封装结构,包括:发光元件,其具有相对的第一表面与第二表面、及邻接该第一表面与该第二表面的侧面;包覆层,其形成于该发光元件的侧面上;荧光层,其形成于该包覆层与该发光元件的第一表面上,其中,该包覆层的侧边及该荧光层的侧边并共同形成为一斜面;以及反射层,其形成于该斜面上,且遮盖该荧光层的侧边。
前述的结构中,还包括有透光层结合于该荧光层上。
前述的制法与结构中,该包覆层为透光材质所形成者;该反射层为金属层或白胶。
本发明又提供一种封装结构的制法,包括:提供多个发光元件,并形成荧光层于该些发光元件上,其中,该些发光元件具有相对的第一表面与第二表面、及邻接该第一表面与该第二表面的侧面,且该荧光层覆盖该发光元件的第一表面与侧面;于该荧光层上形成透光层,以令该透光层覆盖该荧光层;于该透光层中形成多个位于该些发光元件之间的沟槽,其中,该沟槽的深度超过形成在该第一表面的荧光层的高度;以及形成反射层于该些沟槽的槽壁上。
前述的制法中,还包括沿该些沟槽进行切单制程。
本发明再提供一种封装结构,包括:发光元件,其具有相对的第一表面与第二表面、及邻接该第一表面与该第二表面的侧面;荧光层,其覆盖该发光元件的该第一表面与该侧面;透光层,其覆盖该荧光层,其中该透光层外侧缘形成有一斜面;以及反射层,形成于该斜面上,而遮盖该荧光层的外侧缘。
前述的结构与制法中,该反射层为金属层或白胶。
由上可知,本发明的封装结构及其制法藉由在多个发光元件间形成沟槽,且该沟槽的深度至少穿透荧光层(及包覆层)或至少超过形成于发光元件第一表面上的荧光层的高度,以于荧光层外侧缘或透光层外侧缘形成有斜面的结构,并使形成于该斜面上的反射层遮盖该荧光层侧边,避免光线从荧光层的侧边外泄出去。再者,透过该些沟槽的槽壁为斜面,使该反射层具有斜度,以利于反射光线,且可藉由调整该沟槽的深度或角度以调整光源射出角度。
附图说明
图1为悉知LED封装件的剖面图;
图2A至图2E为本发明的封装结构的制法的第一实施例的剖面示意图,其中图2C’、图2D’与图2E’为对应图2C、图2D与图2E的另一实施例;以及
图3A至图3E为本发明的封装结构的制法的第二实施例的剖面示意图,其中图3D’与图3E’为对应图3D与图3E的另一实施例。
符号说明
1 LED封装件
2,2’,3,3’ 封装结构
10,20,30 发光元件
20a,30a 第一表面
20b,30b 第二表面
20c,30c 侧面
21,31 第一离型层
21’,31’ 第二离型层
12,22 包覆层
23,33 沟槽
231,331 槽壁
14,24,34 荧光层
16 透光件
26,36 透光层
36a 第一侧
36b 第二侧
27,35,37 反射层
S 切割路径
h 荧光层的高度。
具体实施方式
以下藉由特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。
须知,本说明书所附图式所绘示的结构、比例、大小等,均仅用以配合说明书所揭示的内容,以供本领域技术人员的了解与阅读,并非用以限定本发明可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”、及“一”等的用语,也仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当亦视为本发明可实施的范畴。
请参阅图2A至图2E,其为本发明的封装结构及其制法的第一实施例的剖面示意图。
如图2所示,结合多个发光元件20于第一离型层21上,其中该些发光元件20具有相对的第一表面20a与第二表面20b、及邻接该第一表面20a与该第二表面20b的侧面20c。于本实施例中,该些发光元件20为发光二极管,并透过该第二表面20b以供该些发光元件20结合于该第一离型层21上。
如图2B所示,形成包覆层22于该些多个发光元件20之间,且该包覆层22覆盖于该些发光元件20的侧面20c,但不覆盖第一表面20a。于本实施例中,该包覆层22为透光材质所形成者,例如透明胶层(如透明硅胶),且该包覆层22以充填方式或模封(molding)方式形成。
如图2C所示,形成荧光层24于发光元件20的第一表面20a与该包覆层22上。该荧光层24为将荧光颗粒以喷洒或喷涂(spray-coating)或静电涂布方式形成于该发光元件20的第一表面20a与该包覆层22上,亦或预先将荧光颗粒与一胶膜结合再贴附于该发光元件20的第一表面20a与该包覆层22上,以使该些荧光颗粒均匀布设于该于该些发光元件20的第一表面20a与该包覆层22上。由于包覆层22未覆盖发光元件20的第一表面20a,如此当发光元件20的第一表面20a发出光线时,光线直接进入荧光层24后,可直接与其中的荧光颗粒进行反应,以产生理想的色光。
另外可选择于该荧光层24上形成有第二离型层21’,以于后续制程进行时,避免破坏荧光层24。
如图2D所示,于任二相邻的该发光元件20之间的包覆层22形成沟槽23,其中该沟槽23的深度至少穿透该包覆层22及荧光层24;该沟槽23的断面例如呈倒V状,也就是对应于覆盖各该发光元件20的包覆层22及荧光层24的外侧缘形成有一斜面,该斜面即为对应该沟槽23的槽壁231;另外,可藉由调整该倒V状沟槽23的深度及角度以调整光源射出角度;此外,该沟槽23例如以切割方式形成。
接着形成反射层27于该些沟槽23的槽壁231上,也就是于斜面上形成反射层27。于本实施例中,该反射层27为一金属层。在一些实施例中,可利用电镀、沉积、涂布或溅镀等方式将金属层附着于该斜面上;此外,也可于该些沟槽23中填入例如为白胶的反射层。另由于第一离型层21与第二离型层21’的设置,可避免反射层形成于发光元件20与荧光层24上。
如图2E所示,接着,移除该第一离型层21与该第二离型层21’,以外露该发光元件20的第二表面20b与该包覆层22,并沿如图2D所示的切割路径S(即沿该些沟槽23)进行切单制程,以制得多个发光式封装结构2。
请参阅图2C’、图2D’与图2E’,为对应图2C、图2D与图2E的另一实施例。本实施例与第一实施例大致相同,主要差异在于透光层26的形成,故不再赘述相同制程部分。
如图2C’、图2D’与图2E’所示,可选择将荧光层24结合一透光层26,其中,该透光层26为玻璃、透明胶、或玻璃与透明胶的组合。此外,该些沟槽23可延伸至该荧光层24或者延伸至该荧光层24及该透光层26。透过本实施例,可得到发光式封装结构2’。
本发明还提供一种封装结构2,2’,包括:一发光元件20、一荧光层24、一包覆层22、一透光层26以及一反射层27。
所述的发光元件20为发光二极管,其具有相对的第一表面20a与第二表面20b、及邻接该第一表面20a与该第二表面20b的侧面20c,而该包覆层22形成于该侧面20c上,另该荧光层24形成于该发光元件20及该包覆层22上且覆盖该发光元件20的该第一表面20a,其中该包覆层22的侧边及该荧光层24的侧边并共同形成为一斜面,以供反射层27形成于该斜面上,且遮盖该荧光层24的侧边。另所述的透光层26可选择覆盖该荧光层24。
该透光层26为玻璃、透明胶、或玻璃与透明胶的组合。该反射层27为一金属层。
请参阅图3A至图3E为本发明的封装结构的制法的第二实施例的剖面示意图。本实施例与第一实施例主要差异在于荧光层的形成位置,故不再赘述相同制程部分。
如图3A所示,结合多个发光元件30于第一离型层31上,其中该些发光元件30具有相对的第一表面30a与第二表面30b、及邻接该第一表面30a与该第二表面30b的侧面30c。于本实施例中,该些发光元件30透过该第二表面30b以供该些发光元件30结合于该第一离型层31上。接着形成荧光层34于该些发光元件30上,且该荧光层34覆盖该发光元件30的第一表面30a与侧面30c。
于本实施例中,不需如同第一实施例于多个发光元件之间形成包覆层。
如图3B所示,形成透光层36于该第一离型层31与该荧光层34上,以覆盖该荧光层34。该透光层36例如为透明胶。
如图3C所示,于该透光层36中形成多个位于该些发光元件30之间的沟槽33,且该沟槽33的深度至少超过形成于该发光元件第一表面上的该荧光层34的高度h。该沟槽33例如以切割透光层36方式形成。如图所示,该沟槽33的断面例如呈倒V状,也就是对应于覆盖各该发光元件30的透光层36的外侧缘形成有一斜面,该斜面即为对应该沟槽33的槽壁331。
如图3D所示,形成反射层35于该沟槽33的槽壁331上。在本实施例中,反射层35为一白胶,且该白胶填满该沟槽33。
如图3E所示,沿如图3D所示的切割路径S(即沿该些沟槽33)进行切单制程,并移除该第一离型层31,以外露该发光元件30的第二表面30b、该荧光层34与该透光层36,进而制得多个发光式封装结构3。
请参阅图3D’与图3E’,为对应图3D与图3E的另一实施例。本实施例与第二实施例大致相同,主要差异在于反射层37的材质与形成方式,故不再赘述相同制程部分。
如图3D’与图3E’所示,于该透光层36中形成多个位于该些发光元件30之间的沟槽33,并形成反射层37于该沟槽33的槽壁331上,该反射层37为一金属层,在一些实施例中,可利用电镀、沉积、涂布或溅镀等方式将金属层附着于沟槽33的断面,也就是该斜面上。此外,可于该透光层36上形成第二离型层31’,以于形成反射层37时保护透光层36。之后移除该第一离型层31与第二离型层31’,并沿如图3D’所示的切割路径S(即沿该些沟槽33)进行切单制程,以制得多个发光式封装结构3’。
本发明还提供一种封装结构3,3’,包括:一发光元件30、一荧光层34、一透光层36以及一反射层35,37。
所述的发光元件30为发光二极管,其具有相对的第一表面30a与第二表面30b、及邻接该第一表面30a与该第二表面30b的侧面30c,其中,荧光层34覆盖该发光元件30的该第一表面30a与该侧面30c。
所述的透光层36其具有相对的第一侧36a与第二侧36b,且该透光层36覆盖该荧光层34,其中该透光层36的第二侧36b与该发光元件30的第二表面30b共平面,且该第一侧36a的面积大于第二侧36b的面积,亦即于该透光层36的外侧缘形成一斜面。该透光层36为透明胶。
所述的反射层35,37形成于该斜面上,而遮盖住荧光层34的外侧缘。于一实施例中,所述的反射层35例如为白胶。于另一实施例中,所述的反射层37例如为金属层。
透过前述说明可知,本发明的封装结构及其制法藉由在多个发光元件间形成沟槽,且该沟槽的深度至少穿透荧光层(及包覆层)或至少超过形成于发光元件第一表面上的荧光层的高度,以于荧光层外侧缘或透光层外侧缘形成有斜面的结构,并使形成于该斜面上的反射层遮盖该荧光层侧边,避免光线从荧光层的侧边外泄出去,此外,透过该些沟槽的槽壁为斜面,使该反射层具有斜度,以利于反射光线,且可藉由调整该沟槽的深度或角度以调整光源射出角度。
上述实施例仅用以例示性说明本发明的原理及其功效,而非用于限制本发明。任何本领域技术人员均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的权利保护范围,应如权利要求书所列。

Claims (15)

1.一种封装结构的制法,其特征为,该制法包括:
提供多个发光元件,并于该些发光元件间形成包覆层,其中,各该发光元件具有相对的第一表面与第二表面、及邻接该第一表面与该第二表面的侧面,且该包覆层形成于任二相邻的该发光元件的侧面间;
形成荧光层于该些多个发光元件的第一表面与该包覆层上;
于任二相邻的该发光元件之间的包覆层形成沟槽,且令该沟槽贯穿该包覆层及荧光层;以及
形成反射层于该些沟槽的槽壁上。
2.如权利要求1所述的封装结构的制法,其特征为,该荧光层上还结合有一透光层。
3.如权利要求2所述的封装结构的制法,其特征为,该些沟槽还延伸至该透光层。
4.如权利要求1所述的封装结构的制法,其特征为,该包覆层为透光材质所形成者。
5.如权利要求1所述的封装结构的制法,其特征为,该反射层为金属层或白胶。
6.如权利要求1或2所述的封装结构的制法,其特征为,该制法还包括沿该些沟槽进行切单制程。
7.一种封装结构,其特征为,该封装结构包括:
发光元件,其具有相对的第一表面与第二表面、及邻接该第一表面与该第二表面的侧面;
包覆层,其形成于该发光元件的侧面上;
荧光层,其形成于该包覆层与该发光元件的第一表面上,其中,该包覆层的侧边及该荧光层的侧边并共同形成为一斜面;以及
反射层,其形成于该斜面上,且遮盖该荧光层的侧边。
8.如权利要求7所述的封装结构,其特征为,该封装结构还包括有透光层,其结合于该荧光层上。
9.如权利要求7所述的封装结构,其特征为,该包覆层为透光材质所形成者。
10.如权利要求7所述的封装结构,其特征为,该反射层为金属层或白胶。
11.一种封装结构的制法,其特征为,该制法包括:
提供多个发光元件,并形成荧光层于该些发光元件上,其中,该些发光元件具有相对的第一表面与第二表面、及邻接该第一表面与该第二表面的侧面,且该荧光层覆盖该发光元件的第一表面与侧面;
于该荧光层上形成透光层,以令该透光层覆盖该荧光层;
于该透光层中形成多个位于任二相邻的该发光元件之间的沟槽,其中,该沟槽的深度超过形成在该第一表面的荧光层的高度;以及
形成反射层于该些沟槽的槽壁上。
12.如权利要求11所述的封装结构的制法,其特征为,该反射层为金属层或白胶。
13.如权利要求11所述的封装结构的制法,其特征为,该制法还包括沿该些沟槽进行切单制程。
14.一种封装结构,其特征为,该封装结构包括:
发光元件,其具有相对的第一表面与第二表面、及邻接该第一表面与该第二表面的侧面;
荧光层,其覆盖该发光元件的该第一表面与该侧面;
透光层,其覆盖该荧光层,其中该透光层外侧缘形成有一斜面;以及
反射层,形成于该斜面上,而遮盖住该荧光层的外侧缘。
15.如权利要求14所述的封装结构,其特征为,该反射层为金属层或白胶。
CN201610421876.2A 2015-11-05 2016-06-14 封装结构及其制法 Pending CN106684225A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW104136461 2015-11-05
TW104136461A TW201717334A (zh) 2015-11-05 2015-11-05 封裝結構及其製法

Publications (1)

Publication Number Publication Date
CN106684225A true CN106684225A (zh) 2017-05-17

Family

ID=58663818

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610421876.2A Pending CN106684225A (zh) 2015-11-05 2016-06-14 封装结构及其制法

Country Status (5)

Country Link
US (1) US20170133562A1 (zh)
JP (1) JP2017092449A (zh)
KR (1) KR20170053131A (zh)
CN (1) CN106684225A (zh)
TW (1) TW201717334A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534628A (zh) * 2018-05-24 2019-12-03 光宝光电(常州)有限公司 发光装置及其制造方法
CN111742420A (zh) * 2017-12-20 2020-10-02 亮锐有限责任公司 分段式led阵列结构

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6593237B2 (ja) * 2016-03-22 2019-10-23 豊田合成株式会社 発光素子の製造方法、及び発光装置の製造方法
JP7111939B2 (ja) * 2017-04-28 2022-08-03 日亜化学工業株式会社 発光装置及びその製造方法
DE102017113388A1 (de) * 2017-06-19 2018-12-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
CN109390327B (zh) * 2017-08-02 2020-10-30 吴裕朝 发光装置、应用其的背光模组、光源模组及其制备方法
KR102035043B1 (ko) * 2017-11-28 2019-10-22 (주)라이타이저 삼면 발광 칩 스케일 패키지 및 그의 제조 방법
JP6760321B2 (ja) 2018-03-20 2020-09-23 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP7082279B2 (ja) 2018-03-29 2022-06-08 日亜化学工業株式会社 発光装置およびその製造方法
JP7054005B2 (ja) 2018-09-28 2022-04-13 日亜化学工業株式会社 発光装置
JP7007598B2 (ja) * 2018-12-14 2022-02-10 日亜化学工業株式会社 発光装置、発光モジュール及び発光装置の製造方法
US10910433B2 (en) 2018-12-31 2021-02-02 Lumileds Llc Pixelated LED array with optical elements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100096977A1 (en) * 2008-10-21 2010-04-22 Seoul Opto Device Co., Ltd. Ac light emitting device with long-persistent phosphor and light emitting device module having the same
JP2012069577A (ja) * 2010-09-21 2012-04-05 Citizen Electronics Co Ltd 半導体発光装置及びその製造方法
JP2012124443A (ja) * 2010-11-15 2012-06-28 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4789350B2 (ja) * 2001-06-11 2011-10-12 シチズン電子株式会社 発光ダイオードの製造方法
JP2008071806A (ja) * 2006-09-12 2008-03-27 C I Kasei Co Ltd 発光装置
WO2009066430A1 (ja) * 2007-11-19 2009-05-28 Panasonic Corporation 半導体発光装置および半導体発光装置の製造方法
US9490398B2 (en) * 2012-12-10 2016-11-08 Citizen Holdings Co., Ltd. Manufacturing method of light emitting device in a flip-chip configuration with reduced package size

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100096977A1 (en) * 2008-10-21 2010-04-22 Seoul Opto Device Co., Ltd. Ac light emitting device with long-persistent phosphor and light emitting device module having the same
JP2012069577A (ja) * 2010-09-21 2012-04-05 Citizen Electronics Co Ltd 半導体発光装置及びその製造方法
JP2012124443A (ja) * 2010-11-15 2012-06-28 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111742420A (zh) * 2017-12-20 2020-10-02 亮锐有限责任公司 分段式led阵列结构
CN111742420B (zh) * 2017-12-20 2023-11-10 亮锐有限责任公司 分段式led阵列结构
CN110534628A (zh) * 2018-05-24 2019-12-03 光宝光电(常州)有限公司 发光装置及其制造方法
CN110534628B (zh) * 2018-05-24 2021-03-09 光宝光电(常州)有限公司 发光装置及其制造方法

Also Published As

Publication number Publication date
KR20170053131A (ko) 2017-05-15
JP2017092449A (ja) 2017-05-25
US20170133562A1 (en) 2017-05-11
TW201717334A (zh) 2017-05-16

Similar Documents

Publication Publication Date Title
CN106684225A (zh) 封装结构及其制法
US20200191357A1 (en) Optic for a Light Source
US20150187987A1 (en) Method of manufacturing a quantum dot optical component and backlight unit having the quantum dot optical component
JP7026612B2 (ja) バックライト、バックライトの製造方法、導光板、導光板の製造方法及び表示装置
CN104752478B (zh) 有机发光二极管显示装置
JP2008117666A (ja) 発光装置およびそれを用いたバックライト装置
JP6253949B2 (ja) Led発光装置
US20160291238A1 (en) Front light display device and manufacturing thereof
TW201340434A (zh) 有機電致發光元件、照明裝置、及有機電致發光元件之製造方法
US20130181243A1 (en) Solid State Lighting Device
RU2010137317A (ru) Оптический элемент и способ его изготовления
TW201542964A (zh) 光轉換基板及發光封裝及包括其之汽車燈
CN103843466A (zh) 具有反射表面区域的半导体发光装置
KR20130081515A (ko) Led 패키지용 기판 및 led 패키지 제조방법
JP2009146654A (ja) 面光源装置及びその製造方法
CN107644929A (zh) 发光元件
JP5851262B2 (ja) 線状光源装置、面発光装置、および液晶表示装置
EP2223351B1 (en) Side emitting device with hybrid top reflector
CN217086567U (zh) 一种led封装结构、led模组及led显示屏
CN111722432A (zh) 一种led灯板、制备方法、背光模组和显示装置
CN105470274A (zh) 一种显示面板、显示面板制造方法和显示装置
KR20120077252A (ko) 발광 패키지
KR20120063064A (ko) 백라이트 유닛 및 이의 제조방법
JP2020161358A (ja) 照明装置
TWI795162B (zh) 發光元件

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170517