CN106684138A - 高压无结场效应器件及其形成方法 - Google Patents

高压无结场效应器件及其形成方法 Download PDF

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Publication number
CN106684138A
CN106684138A CN201510746889.2A CN201510746889A CN106684138A CN 106684138 A CN106684138 A CN 106684138A CN 201510746889 A CN201510746889 A CN 201510746889A CN 106684138 A CN106684138 A CN 106684138A
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China
Prior art keywords
effect device
field effect
high pressure
junction field
forming method
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CN201510746889.2A
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肖德元
张汝京
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Zing Semiconductor Corp
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Zing Semiconductor Corp
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Priority to CN201510746889.2A priority Critical patent/CN106684138A/zh
Priority to US15/012,873 priority patent/US9634151B1/en
Priority to TW105103631A priority patent/TW201717395A/zh
Publication of CN106684138A publication Critical patent/CN106684138A/zh
Pending legal-status Critical Current

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Abstract

本发明提出了一种高压无结场效应器件及其形成方法，在栅极结构下方依次形成沟道层和阻挡层，并且阻挡层的能带宽度大于沟道层的能带宽度，因此能够在沟道层和阻挡层的界面之间形成二维电子气，使形成的高压无结场效应器件具有高迁移率，并且还具有较高的击穿电压，从而获得具有较好的性能及可靠性的高压无结场效应器件。

Description

高压无结场效应器件及其形成方法
技术领域
本发明涉及半导体制造领域，尤其涉及一种高压无结场效应器件及其形成方法。
背景技术
高电子迁移率晶体管(HEMT)的基本结构由一个调制掺杂异质结及其源漏结构组成。存在于调制掺杂异质结中的二维电子气(2-DEG)，由于不受电离杂质离子散射的影响，其迁移率非常高。HEMT是电压控制器件，栅极电压Vg可控制异质结势阱的深度，从而控制势阱中2-DEG的面密度，进而控制器件的工作电流。对于GaAs体系的HEMT，通常其中的n-AlxGa1-xAs控制层应该是耗尽的。若n-AlxGa1-xAs层厚度较大、掺杂浓度又高，则在Vg＝0时就存在有2-DEG，为耗尽型器件，反之则为增强型器件(Vg＝0时，肖特基耗尽层即延伸到本征GaAs层内部)；对于HEMT，主要是要控制好宽禁带半导体层(控制层)的掺杂浓度和厚度，特别是厚度。在考虑HEMT中的2-DEG面密度Ns时，通常只需要考虑异质结势阱中的两个二维子能带(i＝0和1)即可。2-DEG面电荷密度Ns将受到栅极电压Vg的控制。
发明内容
本发明的目的在于提供一种高压无结场效应器件及其形成方法，能够获得具有高迁移率的高压无结场效应器件。
为了实现上述目的，本发明提出了一种高压无结场效应器件的形成方法，包括步骤：
提供衬底；
在所述衬底上形成鳍形结构；
在所述鳍形结构表面依次形成沟道层、阻挡层、栅介质层及金属层，其中所述阻挡层的能带宽度大于沟道层的能带宽度；
刻蚀所述金属层及栅介质层形成栅极结构；
在所述栅极结构两侧形成侧墙；
在所述侧墙两侧的阻挡层上形成源漏电极。
进一步的，在所述的高压无结场效应器件的形成方法中，所述衬底为绝缘体上硅衬底。
进一步的，在所述的高压无结场效应器件的形成方法中，所述沟道层的材质为MoS2、WS2、MoSe2、WSe2、MoTe2或者WTe2中的一种。
进一步的，在所述的高压无结场效应器件的形成方法中，所述沟道层的厚度范围是0.5nm～10nm。
进一步的，在所述的高压无结场效应器件的形成方法中，所述阻挡层材质为MoS2、WS2、MoSe2、WSe2、MoTe2或者WTe2中的一种。
进一步的，在所述的高压无结场效应器件的形成方法中，所述阻挡层的厚度范围是0.1nm～5nm。
进一步的，在所述的高压无结场效应器件的形成方法中，所述沟道层和阻挡层均采用CVD、PVD、ALD、ALE、MBE、MOCVD、UHCVD、RTCVD或者MEE工艺形成。
进一步的，在所述的高压无结场效应器件的形成方法中，所述栅介质层材质为二氧化硅、氧化铝、氧化锆或氧化铪。
进一步的，在所述的高压无结场效应器件的形成方法中，所述栅介质层采用MOCVD、CVD、ALD或MBE工艺形成。
进一步的，在所述的高压无结场效应器件的形成方法中，所述金属层材质为Cr或Au。
进一步的，在所述的高压无结场效应器件的形成方法中，所述金属层的厚度范围为100nm～300nm。
进一步的，在所述的高压无结场效应器件的形成方法中，所述金属层采用PVD、MOCVD或ALD工艺形成。
进一步的，在所述的高压无结场效应器件的形成方法中，刻蚀所述金属层及栅介质层的步骤包括：
在所述金属层上涂覆光阻，并对所述光阻进行图案化处理；
以所述图案化处理后的光阻作为掩膜，采用干法刻蚀依次刻蚀所述金属层和栅介质层，形成栅极结构。
进一步的，在所述的高压无结场效应器件的形成方法中，所述侧墙的材质为氮化硅。
进一步的，在所述的高压无结场效应器件的形成方法中，所述源漏电极材质为Au。
在本发明中，还提出了一种高压无结场效应器件，采用如上文所述的高压无结场效应器件的形成方法制备而成，其特征在于，包括：设有鳍形结构的衬底、沟道层、阻挡层、栅极介质层、金属层、侧墙及源漏电极，其中，所述沟道层、阻挡层及栅极介质层依次形成在鳍形结构上，所述金属层位于所述栅极介质层表面，所述侧墙位于栅极结构两侧，所述源漏电极位于所述侧墙两侧的阻挡层上。
与现有技术相比，本发明的有益效果主要体现在：在栅极结构下方依次形成沟道层和阻挡层，并且阻挡层的能带宽度大于沟道层的能带宽度，因此能够在沟道层和阻挡层的界面之间形成二维电子气，使形成的高压无结场效应器件具有高迁移率，并且还具有较高的击穿电压，从而获得具有较好的性能及可靠性的高压无结场效应器件。
附图说明
图1为本发明一实施例中高压无结场效应器件的形成方法的流程图；
图2a至图9a为本发明一实施例中形成高压无结场效应器件过程中沿着沟道方向的剖面示意图；
图2b至图9b为本发明一实施例中形成高压无结场效应器件过程中沿着与沟道垂直方向的剖面示意图；
图10a和图10b为本发明一实施例中高压无结场效应器件产生二维电子气的原理示意图。
具体实施方式
下面将结合示意图对本发明的高压无结场效应器件及其形成方法进行更详细的描述，其中表示了本发明的优选实施例，应该理解本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，下列描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制。
为了清楚，不描述实际实施例的全部特征。在下列描述中，不详细描述公知的功能和结构，因为它们会使本发明由于不必要的细节而混乱。应当认为在任何实际实施例的开发中，必须做出大量实施细节以实现开发者的特定目标，例如按照有关系统或有关商业的限制，由一个实施例改变为另一个实施例。另外，应当认为这种开发工作可能是复杂和耗费时间的，但是对于本领域技术人员来说仅仅是常规工作。
在下列段落中参照附图以举例方式更具体地描述本发明。根据下面说明和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
请参考图1，在本发明中，提出了一种高压无结场效应器件的形成方法，包括步骤：
S100：提供衬底；
S200：在所述衬底上形成鳍形结构；
S300：在所述鳍形结构表面依次形成沟道层、阻挡层、栅介质层及金属层，其中所述阻挡层的能带宽度大于沟道层的能带宽度；
S400：刻蚀所述金属层及栅介质层形成栅极结构；
S500：在所述栅极结构两侧形成侧墙；
S600：在所述侧墙两侧的阻挡层上形成源漏电极。
具体的，请参考图2a和图2b，在本实施例中，提出的衬底为绝缘体上硅衬底，其包括硅衬底100，形成在硅衬底100上的二氧化硅绝缘层110以及形成在二氧化硅绝缘层110上的硅层120，接着，采用涂覆光阻、曝光、显影等工艺，在硅层120的表面形成图案化的光阻层，以所述图案化的光阻层为研磨对所述硅层120进行刻蚀，从而形成鳍形结构，如图2b所示。
接着，请参考图3a、图3b、图4a和图4b，在所述鳍形结构表面依次形成沟道层200、阻挡层300，其中所述阻挡层300的能带宽度大于沟道层200的能带宽度；在本实施例中，所述沟道层200的材质为MoS2、WS2、MoSe2、WSe2、MoTe2或者WTe2中的一种，例如是WS2，其厚度范围是0.5nm～10nm，例如是5nm；所述阻挡层300的材质为MoS2、WS2、MoSe2、WSe2、MoTe2或者WTe2中的一种，其厚度范围是0.1nm～5nm，例如是3nm；其中，需要保证阻挡层300的能带宽度大于沟道层200的能带宽度，因此，优选阻挡层300和沟道层200两者的材质不同。
其中，所述沟道层200和阻挡层300均可以采用CVD(Chemical VaporDeposition，化学气相沉积)、PVD(Physical VaporDeposition，物理气相沉积)、ALD(Atomic LayerDeposition，原子沉积法)、ALE(Atomic LayerEpitaxy，原子外延法)、MBE(Molecular Beam Epitaxy，分子束外延法)、MOCVD(Metal-Organic Chemical Vapor Deposition epitaxy，金属有机化学气相沉积外延)、UHCVD(Ultra-Highvacuum CVD epitaxy，超高真空气相沉积)、RTCVD(Reduced-Temperature CVD epitaxy，减少温度气相沉积)或者MEE(MigrationEnhancedEpitaxy，迁移增强外延)等工艺形成。
接着，请参考图5a和5b，在所述阻挡层300及二氧化硅110的表面形成栅介质层400，其中，所述栅介质层400材质为二氧化硅、氧化铝、氧化锆或氧化铪。
请参考图6a和图6b，在所述栅介质层400的表面形成金属层500，所述金属层500材质为Cr或Au。
接着，请参考图7a和图7b，依次刻蚀所述金属层500及栅介质层400，形成栅极结构，即包括和形成栅介质层400表面的金属层500的栅极，其中，所述栅介质层400暴露出部分二氧化硅110及阻挡层300。
接着，请参考图8a和图8b，在所述栅极结构两侧形成侧墙600，所述侧墙600的材质为氮化硅。
接着，请参考图9a和图9b，在所述侧墙600两侧的阻挡层300表面形成源漏电极700，从而获得高压无结场效应器件。
在本实施例的另一方面还提出了一种高压无结场效应器件，采用如上文所述的方法形成，高压无结场效应器件包括：设有鳍形结构的衬底、沟道层200、阻挡层300、栅极介质层400、金属层500、侧墙600及源漏电极700，其中，所述沟道层200、阻挡层300及栅极介质层400依次形成在鳍形结构上，所述金属层500位于所述栅极介质层400表面，所述侧墙600位于栅极结构两侧，所述源漏电极700位于所述侧墙600两侧的阻挡层300上。
由于，在本实施例中，形成的阻挡层300和沟道层200之间存在能带的差别，从而能够在阻挡层300和沟道层200的界面处产生二维电子气，具体的，请参考图10a和图10b，在图10a中，当栅极510未被施加电压时，栅介质层400、阻挡层300和沟道层200能带未发生改变，也没有二维电子气产生，在图10b中，当栅极510被施加电压时，栅介质层400、阻挡层300和沟道层200的能带发生改变，并且在阻挡层300和沟道层200的界面处会形成二维电子气(2-DEG)210，从而提高载流子的迁移率，大大的增强器件的性能。
综上，在本发明实施例提供的高压无结场效应器件及其形成方法中，在栅极结构下方依次形成沟道层和阻挡层，并且阻挡层的能带宽度大于沟道层的能带宽度，因此能够在沟道层和阻挡层的界面之间形成二维电子气，使形成的高压无结场效应器件具有高迁移率，并且还具有较高的击穿电压，从而获得具有较好的性能及可靠性的高压无结场效应器件。
上述仅为本发明的优选实施例而已，并不对本发明起到任何限制作用。任何所属技术领域的技术人员，在不脱离本发明的技术方案的范围内，对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动，均属未脱离本发明的技术方案的内容，仍属于本发明的保护范围之内。

Claims (16)

1.一种高压无结场效应器件的形成方法，其特征在于，包括步骤：
提供衬底；
在所述衬底上形成鳍形结构；
在所述鳍形结构表面依次形成沟道层、阻挡层、栅介质层及金属层，其中所述阻挡层的能带宽度大于沟道层的能带宽度；
刻蚀所述金属层及栅介质层形成栅极结构；
在所述栅极结构两侧形成侧墙；
在所述侧墙两侧的阻挡层上形成源漏电极。
2.如权利要求1所述的高压无结场效应器件的形成方法，其特征在于，所述衬底为绝缘体上硅衬底。
3.如权利要求1所述的高压无结场效应器件的形成方法，其特征在于，所述沟道层的材质为MoS2、WS2、MoSe2、WSe2、MoTe2或者WTe2中的一种。
4.如权利要求3所述的高压无结场效应器件的形成方法，其特征在于，所述沟道层的厚度范围是0.5nm～10nm。
5.如权利要求1所述的高压无结场效应器件的形成方法，其特征在于，所述阻挡层材质为MoS2、WS2、MoSe2、WSe2、MoTe2或者WTe2中的一种。
6.如权利要求5所述的高压无结场效应器件的形成方法，其特征在于，所述阻挡层的厚度范围是0.1nm～5nm。
7.如权利要求3或5所述的高压无结场效应器件的形成方法，其特征在于，所述沟道层和阻挡层均采用CVD、PVD、ALD、ALE、MBE、MOCVD、UHCVD、RTCVD或者MEE工艺形成。
8.如权利要求1所述的高压无结场效应器件的形成方法，其特征在于，所述栅介质层材质为二氧化硅、氧化铝、氧化锆或氧化铪。
9.如权利要求8所述的高压无结场效应器件的形成方法，其特征在于，所述栅介质层采用MOCVD、CVD、ALD或MBE工艺形成。
10.如权利要求1所述的高压无结场效应器件的形成方法，其特征在于，所述金属层材质为Cr或Au。
11.如权利要求10所述的高压无结场效应器件的形成方法，其特征在于，所述金属层的厚度范围为100nm～300nm。
12.如权利要求10所述的高压无结场效应器件的形成方法，其特征在于，所述金属层采用PVD、MOCVD或ALD工艺形成。
13.如权利要求1所述的高压无结场效应器件的形成方法，其特征在于，刻蚀所述金属层及栅介质层的步骤包括：
在所述金属层上涂覆光阻，并对所述光阻进行图案化处理；
以所述图案化处理后的光阻作为掩膜，采用干法刻蚀依次刻蚀所述金属层和栅介质层，形成栅极结构。
14.如权利要求1所述的高压无结场效应器件的形成方法，其特征在于，所述侧墙的材质为氮化硅。
15.如权利要求1所述的高压无结场效应器件的形成方法，其特征在于，所述源漏电极材质为Au。
16.一种高压无结场效应器件，采用如权利要求1至15中任一项所述的高压无结场效应器件的形成方法制备而成，其特征在于，包括：设有鳍形结构的衬底、沟道层、阻挡层、栅极介质层、金属层、侧墙及源漏电极，其中，所述沟道层、阻挡层及栅极介质层依次形成在鳍形结构上，所述金属层位于所述栅极介质层表面，所述侧墙位于栅极结构两侧，所述源漏电极位于所述侧墙两侧的阻挡层上。
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