TW201717395A - 高壓無接面場效元件及其製造方法 - Google Patents

高壓無接面場效元件及其製造方法 Download PDF

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TW201717395A
TW201717395A TW105103631A TW105103631A TW201717395A TW 201717395 A TW201717395 A TW 201717395A TW 105103631 A TW105103631 A TW 105103631A TW 105103631 A TW105103631 A TW 105103631A TW 201717395 A TW201717395 A TW 201717395A
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layer
field effect
effect device
vapor deposition
manufacturing
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TW105103631A
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肖德元
汝京 張
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上海新昇半導體科技有限公司
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Abstract

本發明提供一種高壓無接面場效元件及其製造方法，元件的閘極結構之下方依序設有通道層和阻障層，並且阻障層的能帶寬度大於通道層的能帶寬度。因此，能夠在通道層和阻障層的介面之間形成二維電子氣，使得元件具有高遷移率以及較高的擊穿電壓，從而獲得較好的性能及可靠性。

Description

高壓無接面場效元件及其製造方法
本發明有關於一種半導體元件及其製造方法，尤指一種高壓無接面場效元件及其製造方法。
高電子遷移率電晶體(HEMT)基本上由調製摻雜異質結構及其源漏結構所組成。存在於調製摻雜異質結構中的二維電子氣(2-DEG)，由於不受電離雜質離子散射的影響，所以遷移率非常高。HEMT是一種電壓控制元件，所以透過閘極電壓(Vg)可以控制異質結構的勢阱深度，從而控制勢阱中的二維電子氣的密度，進而控制元件的工作電流。對於使用GaAs作為基板的HEMT，通常n-AlxGa1-xAs控制層應該是空乏的。若n-AlxGa1-xAs控制層的厚度較大且摻雜濃度較高時，當閘極電壓為零時，就會產生二維電子氣而成為一空乏型電晶體元件(Vg=0時，肖特基空乏層延伸到GaAs層的內部)。反之，當閘極電壓(Vg)不為零時，則成為一增強型電晶體元件。對於HEMT，對於寬禁帶半導體層的摻雜濃度和厚度必須加以控制，尤其是厚度。在考慮HEMT的二維電子氣的密度時，通常只需考慮異質結構的勢阱中的兩個二維子能帶(i=0和1)，而二維電子氣的密度將受到閘極電壓的控制。
有鑑於此，目前有需要一種改良的高壓無接面場效元件，至少可改善上述缺失。
本發明的目的在於提供一種高壓無接面場效元件及其製造方法，能夠獲得具有高遷移率的高壓無接面場效元件。
本發明的一實施例提供一種高壓無接面場效元件的製造方 法，包括以下步驟：提供一基板；在該基板之上形成一鰭形結構；在該鰭形結構之表面依序地形成一通道層、一阻障層、一閘極介電層及一金屬層，其中該阻障層的能帶寬度大於該通道層的能帶寬度；刻蝕該金屬層及該閘極介電層以形成一閘極結構；在該閘極結構之兩側形成一側牆；以及在該側牆之兩側的阻障層的表面之處形成一源汲極。
本發明的另一實施例提供一種高壓無接面場效元件，包括：一基板，該基板之上設有一鰭形結構；一通道層；一阻障層；一閘極介電層，該通道層、該阻障層及該閘極介電層依序地設於該鰭形結構之上；一金屬層，該金屬層設於該閘極介電層之表面以形成一閘極結構；一側牆，該側牆設於該閘極結構之兩側；以及一源汲極，該源汲極設於該側牆之兩側的該阻障層之表面之處。
與現有技術相比，本發明的有益效果主要在於：在閘極結構下方依次形成通道層和阻障層，並且阻障層的能帶寬度大於通道層的能帶寬度，因此能夠在通道層和阻障層的介面之間形成二維電子氣，使得製成的高壓無接面場效元件具有高遷移率，並且還具有較高的擊穿電壓，從而獲得具有較好的性能及可靠性。
100‧‧‧基板
110‧‧‧二氧化矽絕緣層
120‧‧‧矽層
200‧‧‧通道層
210‧‧‧二維電子氣
300‧‧‧阻障層
400‧‧‧閘極介電層
500‧‧‧金屬層
600‧‧‧側牆
700‧‧‧源汲極
第1圖為本發明一實施例所提供的高壓無接面場效元件的製造方法的流程圖。
第2a圖至第9a圖為本發明一實施例所提供的高壓無接面場效元件沿著一通道方向的剖面圖。
第2b圖至第9b圖為本發明一實施例所提供的製造高壓無接面場效元件沿著垂直於通道方向的剖面圖。
第10a圖和第10b圖為本發明一實施例所提供的高壓無接面場效元件產生二維電子氣的示意圖。
下面將結合示意圖對本發明的高壓無接面場效元件及其製造方法進行更詳細的描述，其中表示了本發明的優選實施例，應該理解本發明領域技術人員可以修改在此描述的本發明，而仍然實現本發明的有利 效果。因此，下列描述應當被理解為對於本發明領域技術人員的廣泛知道，而並不作為對本發明的限制。
為了清楚，不描述實際實施例的全部特徵。在下列描述中，不詳細描述公知的功能和結構，因為它們會使本發明由於不必要的細節而混亂。應當認為在任何實際實施例的開發中，必須做出大量實施細節以實現開發者的特定目標，例如按照有關系統或有關商業的限制，由一個實施例改變為另一個實施例。另外，應當認為這種開發工作可能是複雜和耗費時間的，但是對於本發明領域技術人員來說僅僅是常規工作。
在下列段落中參照附圖以舉例方式更具體地描述本發明。根據下面說明和權利要求書，本發明的優點和特徵將更清楚。需說明的是，附圖均採用非常簡化的形式且均使用非精准的比例，僅用以方便、明晰地輔助說明本發明實施例的目的。
請參考第1圖，在本發明中，提出了一種高壓無接面場效元件的製造方法，包括步驟：S100：提供一基板；S200：在該基板上形成一鰭形結構；S300：在該鰭形結構之表面依序地形成一通道層、一阻障層、一閘極介電層及一金屬層，其中該阻障層的能帶寬度大於該通道層的能帶寬度；S400：刻蝕該金屬層及該閘極介電層形成一閘極結構；S500：在該閘極結構之兩側形成側牆；S600：在該側牆之兩側的阻障層的表面之處形成一源汲極。
具體來說，請參考第2a圖和第2b圖，在本實施例中，所使用的基板為絕緣體上覆矽基板，其包括一矽基板100，一形成於矽基板100上的二氧化矽絕緣層110以及一形成於二氧化矽絕緣層110上的矽層120。接著，採用塗覆光阻、曝光、顯影等方式在矽層120的表面形成一圖案化的光阻層，對於設有光阻層的矽層120進行刻蝕，從而形成一鰭形結構(參閱第2b圖)。
接著，請參考第3a圖、第3b圖、第4a圖和第4b圖，在鰭 形結構之表面依序地形成一通道層200以及一阻障層300，其中，該阻障層300的能帶寬度大於通道層200的能帶寬度。該通道層200的材質為二硫化鉬(MoS2)、二硫化鎢(WS2)、二硒化鉬(MoSe2)、二硒化鎢(WSe2)、二碲化鉬(MoTe2)或二碲化鎢(WTe2)。該通道層200的厚度範圍為0.5nm~10nm。該阻障層300的材質為二硫化鉬(MoS2)、二硫化鎢(WS2)、二硒化鉬(MoSe2)、二硒化鎢(WSe2)、二碲化鉬(MoTe2)或二碲化鎢(WTe2)。該阻障層300的厚度範圍為0.1nm~5nm。阻障層300的能帶寬度必須大於通道層200的能帶寬度，因此，最佳的實施例為阻障層300和通道層200採用不同的材質。
該通道層200和該阻障層300的製作採用化學氣相沉積法(Chemical Vapor Deposition)、物理氣相沉積法(Physical Vapor Deposition)、原子沉積法(Atomic Layer Deposition)、原子磊晶法(Atomic Layer Epitaxy)、分子束磊晶法(Molecular Beam Epitaxy)、金屬有機化學氣相沉積磊晶法(Metal-Organic Chemical Vapor Deposition Epitaxy)、超高真空化學氣相沉積磊晶法(Ultra-High Vacuum Chemical Vapor Deposition Epitaxy)、減少溫度化學氣相沉積磊晶法(Reduced-Temperature Chemical Vapor Deposition Epitaxy)或遷移增強磊晶法(Migration Enhanced Epitaxy)。
接著，請參考第5a圖和第5b圖，在該阻障層300及該二氧化矽絕緣層110的表面形成一閘極介電層400，其中，該閘極介電層400材質為二氧化矽、氧化鋁、氧化鋯或氧化鉿。該閘極介電層400的製作採用化學氣相沉積法(Chemical Vapor Deposition)、物理氣相沉積法(Physical Vapor Deposition)、原子沉積法(Atomic Layer Deposition)、原子磊晶法(Atomic Layer Epitaxy)、分子束磊晶法(Molecular Beam Epitaxy)、金屬有機化學氣相沉積磊晶法(Metal-Organic Chemical Vapor Deposition Epitaxy)、超高真空化學氣相沉積磊晶法(Ultra-High Vacuum Chemical Vapor Deposition Epitaxy)、減少溫度化學氣相沉積磊晶法(Reduced-Temperature Chemical Vapor Deposition Epitaxy)或遷移增強磊晶法(Migration Enhanced Epitaxy)。
請參考第6a圖和第6b圖，在該閘極介電層400的表面形成一金屬層500，該金屬層500的材質可為鉻或鋁。該金屬層500的製作採用化學氣相沉積法(Chemical Vapor Deposition)、物理氣相沉積法(Physical Vapor Deposition)、原子沉積法(Atomic Layer Deposition)、原子磊晶法(Atomic Layer Epitaxy)、分子束磊晶法(Molecular Beam Epitaxy)、金屬有機化學氣相沉積磊晶法(Metal-Organic Chemical Vapor Deposition Epitaxy)、超高真空化學氣相沉積磊晶法(Ultra-High Vacuum Chemical Vapor Deposition Epitaxy)、減少溫度化學氣相沉積磊晶法(Reduced-Temperature Chemical Vapor Deposition Epitaxy)或遷移增強磊晶法(Migration Enhanced Epitaxy)。
接著，請參考第7a圖和第7b圖，依序地刻蝕該金屬層500及該閘極介電層400以形成一閘極結構，且蝕刻後暴露出部分的二氧化矽絕緣層110及阻障層300。其中形成閘極結構的詳細步驟包括：在金屬層500的表面塗覆一光阻；對該光阻進行一圖案化處理；將該圖案化處理後的光阻作為一掩膜，依序地對金屬層和閘極介電層進行乾蝕刻以形成閘極結構。
接著，請參考圖8a和圖8b，在該閘極結構之兩側形成一側牆600，該側牆600的材質為氮化矽。
接著，請參考圖9a和圖9b，在該側牆600之兩側的阻障層300的表面之處形成一源汲極700，該源汲極700的材質為鋁，從而獲得一高壓無接面場效元件。
本發明更提供一實施例的採用上述製造方法所製成的高壓無接面場效元件，其中，該高壓無接面場效元件包括一鰭形結構(包含基板100、二氧化矽絕緣層110以及蝕刻後的矽層120)、一通道層200、一阻障層300、一閘極介電層400、一金屬層500、一側牆600及一源汲極700，其中該通道層200、該阻障層300及該閘極介電層400依序地形成於該鰭形結構之上，該金屬層500設於該閘極介電層400之表面，該側牆600設於閘極結構之兩側，該源汲極700設於該側牆600之兩側的阻障層300的表面之處。
在本實施例中，由於阻障層300的能帶寬度大於通道層200的能帶寬度，從而能夠在阻障層300和通道層200的介面處產生二維電子氣。具體來說，請參考第10a圖和第10b圖，在第10a圖中，當未施加電壓於閘極結構時，閘極介電層400、阻障層300和通道層200的能帶尚未發生改變， 也未產生二維電子氣。在第10b圖中，當施加電壓於閘極結構時，閘極介電層400、阻障層300和通道層200的能帶發生改變，並且在阻障層300和通道層200的介面處會形成二維電子氣(2-DEG)210，從而提高載流子的遷移率，大大地增強元件的性能。
綜上，本發明實施例所提供的高壓無接面場效元件及其製造方法，元件的閘極結構的下方依序設有通道層和阻障層，且阻障層的能帶寬度大於通道層的能帶寬度。因此當施加電壓於閘極結構時，通道層和阻障層的介面之間會產生二維電子氣，使得元件具有高遷移率以及較高的擊穿電壓，從而獲得較好的性能及可靠性。
上述僅為本發明的最佳實施例而已，並不對本發明起到任何限制作用。任何本發明所屬技術領域的技術人員，在不脫離本發明的技術方案的範圍內，對於本發明揭露的技術方案和技術內容做任何形式的等同替換或修改等變動，均屬未脫離本發明的技術方案的內容，仍屬於本發明的保護範圍之內。
流程圖無符號標示

Claims (16)

  1. 一種高壓無接面場效元件的製造方法，包括以下步驟：提供一基板；在該基板之上形成一鰭形結構；在該鰭形結構之表面依序地形成一通道層、一阻障層、一閘極介電層及一金屬層，其中該阻障層的能帶寬度大於該通道層的能帶寬度；刻蝕該金屬層及該閘極介電層以形成一閘極結構；在該閘極結構之兩側形成一側牆；以及在該側牆之兩側的阻障層的表面之處形成一源汲極。
  2. 如請求項1所述的高壓無接面場效元件的製造方法，其中該基板為絕緣體上覆矽基板。
  3. 如請求項1所述的高壓無接面場效元件的製造方法，其中該通道層的材質為二硫化鉬(MoS2)、二硫化鎢(WS2)、二硒化鉬(MoSe2)、二硒化鎢(WSe2)、二碲化鉬(MoTe2)或二碲化鎢(WTe2)。
  4. 如請求項3所述的高壓無接面場效元件的製造方法，其中該通道層的厚度範圍為0.5nm~10nm。
  5. 如請求項1所述的高壓無接面場效元件的製造方法，其中該阻障層的材質為二硫化鉬(MoS2)、二硫化鎢(WS2)、二硒化鉬(MoSe2)、二硒化鎢(WSe2)、二碲化鉬(MoTe2)或二碲化鎢(WTe2)。
  6. 如請求項5所述的高壓無接面場效元件的製造方法，其中該阻障層的厚度範圍為0.1nm~5nm。
  7. 如請求項3或5所述的高壓無接面場效元件的製造方法，其中該通道層和阻障層的製作採用化學氣相沉積法(Chemical Vapor Deposition)、物理氣相 沉積法(Physical Vapor Deposition)、原子沉積法(Atomic Layer Deposition)、原子磊晶法(Atomic Layer Epitaxy)、分子束磊晶法(Molecular Beam Epitaxy)、金屬有機化學氣相沉積磊晶法(Metal-Organic Chemical Vapor Deposition Epitaxy)、超高真空化學氣相沉積磊晶法(Ultra-High Vacuum Chemical Vapor Deposition Epitaxy)、減少溫度化學氣相沉積磊晶法(Reduced-Temperature Chemical Vapor Deposition Epitaxy)或遷移增強磊晶法(Migration Enhanced Epitaxy)。
  8. 如請求項1所述的高壓無接面場效元件的製造方法，其中該閘極介電層的材質為二氧化矽、氧化鋁、氧化鋯或氧化鉿。
  9. 如請求項8所述的高壓無接面場效元件的製造方法，其中該閘極介電層的製作採用金屬有機化學氣相沉積磊晶法(Metal-Organic Chemical Vapor Deposition Epitaxy)、化學氣相沉積法(Chemical Vapor Deposition)、原子磊晶法(Atomic Layer Epitaxy)或分子束磊晶法(Molecular Beam Epitaxy)。
  10. 如請求項1所述的高壓無接面場效元件的製造方法，其中該金屬層的材質為鉻或鋁。
  11. 如請求項10所述的高壓無接面場效元件的製造方法，其中該金屬層的厚度範圍為100nm~300nm。
  12. 如請求項10所述的高壓無接面場效元件的製造方法，其中該金屬層的製作採用物理氣相沉積法(Physical Vapor Deposition)、金屬有機化學氣相沉積磊晶法(Metal-Organic Chemical Vapor Deposition Epitaxy)或原子磊晶法(Atomic Layer Epitaxy)。
  13. 如請求項1所述的高壓無接面場效元件的製造方法，其中刻蝕該金屬層及該閘極介電層的步驟更包括：在該金屬層的表面塗覆一光阻，並對該光阻進行圖案化處理；以該圖案化處理後的光阻作為掩膜，依序地對該金屬 層和該閘極介電層進行乾蝕刻以形成該閘極結構。
  14. 如請求項1所述的高壓無接面場效元件的製造方法，其中該側牆的材質為氮化矽。
  15. 如請求項1所述的高壓無接面場效元件的製造方法，其中該源汲極的材質為鋁。
  16. 一種高壓無接面場效元件，包括：一基板，該基板之上設有一鰭形結構；一通道層；一阻障層；一閘極介電層，該通道層、該阻障層及該閘極介電層依序地設於該鰭形結構之上；一金屬層，該金屬層設於該閘極介電層之表面以形成一閘極結構；一側牆，該側牆設於該閘極結構之兩側；以及一源汲極，該源汲極設於該側牆之兩側的該阻障層之表面之處。
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