CN1066578C - 用于将集成电路芯片焊到芯片载体上的倒装片法 - Google Patents

用于将集成电路芯片焊到芯片载体上的倒装片法 Download PDF

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Publication number
CN1066578C
CN1066578C CN95103588A CN95103588A CN1066578C CN 1066578 C CN1066578 C CN 1066578C CN 95103588 A CN95103588 A CN 95103588A CN 95103588 A CN95103588 A CN 95103588A CN 1066578 C CN1066578 C CN 1066578C
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CN
China
Prior art keywords
chip
melting point
alloy
chip carrier
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN95103588A
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English (en)
Chinese (zh)
Other versions
CN1111822A (zh
Inventor
托马斯·帕特里克·高尔
阿托尼·保尔·英格拉汉姆
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International Business Machines Corp
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International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN1111822A publication Critical patent/CN1111822A/zh
Application granted granted Critical
Publication of CN1066578C publication Critical patent/CN1066578C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/016—Manufacture or treatment of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07234—Using a reflow oven
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07235—Applying EM radiation, e.g. induction heating or using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
CN95103588A 1994-04-19 1995-03-27 用于将集成电路芯片焊到芯片载体上的倒装片法 Expired - Lifetime CN1066578C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US229,883 1988-08-08
US08/229,883 US5391514A (en) 1994-04-19 1994-04-19 Low temperature ternary C4 flip chip bonding method

Publications (2)

Publication Number Publication Date
CN1111822A CN1111822A (zh) 1995-11-15
CN1066578C true CN1066578C (zh) 2001-05-30

Family

ID=22863048

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95103588A Expired - Lifetime CN1066578C (zh) 1994-04-19 1995-03-27 用于将集成电路芯片焊到芯片载体上的倒装片法

Country Status (8)

Country Link
US (1) US5391514A (enExample)
EP (1) EP0678908B1 (enExample)
JP (1) JP2758373B2 (enExample)
KR (1) KR0167470B1 (enExample)
CN (1) CN1066578C (enExample)
DE (1) DE69503824T2 (enExample)
MY (1) MY113781A (enExample)
TW (1) TW267249B (enExample)

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US5859470A (en) * 1992-11-12 1999-01-12 International Business Machines Corporation Interconnection of a carrier substrate and a semiconductor device
JP3348528B2 (ja) * 1994-07-20 2002-11-20 富士通株式会社 半導体装置の製造方法と半導体装置及び電子回路装置の製造方法と電子回路装置
US5672545A (en) * 1994-08-08 1997-09-30 Santa Barbara Research Center Thermally matched flip-chip detector assembly and method
FI98899C (fi) * 1994-10-28 1997-09-10 Jorma Kalevi Kivilahti Menetelmä elektroniikan komponenttien liittämiseksi juottamalla
US5985692A (en) * 1995-06-07 1999-11-16 Microunit Systems Engineering, Inc. Process for flip-chip bonding a semiconductor die having gold bump electrodes
US6336262B1 (en) 1996-10-31 2002-01-08 International Business Machines Corporation Process of forming a capacitor with multi-level interconnection technology
US5808853A (en) * 1996-10-31 1998-09-15 International Business Machines Corporation Capacitor with multi-level interconnection technology
US5891754A (en) * 1997-02-11 1999-04-06 Delco Electronics Corp. Method of inspecting integrated circuit solder joints with x-ray detectable encapsulant
US6025649A (en) 1997-07-22 2000-02-15 International Business Machines Corporation Pb-In-Sn tall C-4 for fatigue enhancement
US5937320A (en) * 1998-04-08 1999-08-10 International Business Machines Corporation Barrier layers for electroplated SnPb eutectic solder joints
US6127731A (en) * 1999-03-11 2000-10-03 International Business Machines Corporation Capped solder bumps which form an interconnection with a tailored reflow melting point
US6303400B1 (en) * 1999-09-23 2001-10-16 International Business Machines Corporation Temporary attach article and method for temporary attach of devices to a substrate
KR100319813B1 (ko) * 2000-01-03 2002-01-09 윤종용 유비엠 언더컷을 개선한 솔더 범프의 형성 방법
ATE365378T1 (de) * 2000-07-28 2007-07-15 Infineon Technologies Ag Verfahren zur kontaktierung eines halbleiterbauelementes
AU2002228926A1 (en) * 2000-11-10 2002-05-21 Unitive Electronics, Inc. Methods of positioning components using liquid prime movers and related structures
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7547623B2 (en) 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
WO2004001837A2 (en) * 2002-06-25 2003-12-31 Unitive International Limited Methods of forming electronic structures including conductive shunt layers and related structures
US20040084206A1 (en) * 2002-11-06 2004-05-06 I-Chung Tung Fine pad pitch organic circuit board for flip chip joints and board to board solder joints and method
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
EP1642670A4 (en) * 2003-06-09 2006-11-29 Senju Metal Industry Co BRAZING PULP
US7049170B2 (en) * 2003-12-17 2006-05-23 Tru-Si Technologies, Inc. Integrated circuits and packaging substrates with cavities, and attachment methods including insertion of protruding contact pads into cavities
US7060601B2 (en) * 2003-12-17 2006-06-13 Tru-Si Technologies, Inc. Packaging substrates for integrated circuits and soldering methods
US7427557B2 (en) * 2004-03-10 2008-09-23 Unitive International Limited Methods of forming bumps using barrier layers as etch masks
WO2005101499A2 (en) 2004-04-13 2005-10-27 Unitive International Limited Methods of forming solder bumps on exposed metal pads and related structures
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) * 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
KR100969441B1 (ko) * 2008-06-05 2010-07-14 삼성전기주식회사 반도체칩이 실장된 인쇄회로기판 및 그 제조방법
EP2244285A1 (en) 2009-04-24 2010-10-27 ATOTECH Deutschland GmbH Method to form solder deposits on substrates
EP2180770A1 (en) 2008-10-21 2010-04-28 Atotech Deutschland Gmbh Method to form solder deposits on substrates
EP2405469B1 (en) 2010-07-05 2016-09-21 ATOTECH Deutschland GmbH Method to form solder alloy deposits on substrates
EP2405468A1 (en) 2010-07-05 2012-01-11 ATOTECH Deutschland GmbH Method to form solder deposits on substrates
EP2416634A1 (en) 2010-08-02 2012-02-08 ATOTECH Deutschland GmbH Method to form solder deposits on substrates
PT2601822T (pt) 2010-08-02 2019-10-28 Atotech Deutschland Gmbh Método para formar depósitos de solda e estruturas protuberantes não fundentes sobre substratos
EP2506690A1 (en) 2011-03-28 2012-10-03 Atotech Deutschland GmbH Method to form solder deposits and non-melting bump structures on substrates
US9746583B2 (en) * 2014-08-27 2017-08-29 General Electric Company Gas well integrity inspection system

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US3678569A (en) * 1970-07-15 1972-07-25 Globe Union Inc Method for forming ohmic contacts
DE3785720T2 (de) * 1986-09-25 1993-08-12 Toshiba Kawasaki Kk Verfahren zum herstellen eines filmtraegers.
US4912545A (en) * 1987-09-16 1990-03-27 Irvine Sensors Corporation Bonding of aligned conductive bumps on adjacent surfaces
US4806309A (en) * 1988-01-05 1989-02-21 Willard Industries, Inc. Tin base lead-free solder composition containing bismuth, silver and antimony
JPH0432234A (ja) * 1990-05-28 1992-02-04 Mitsubishi Electric Corp フリップチップボンディング用バンプ構造
JPH05235388A (ja) * 1992-02-24 1993-09-10 Mitsubishi Electric Corp 低抵抗線状パターンの形成方法及び形成装置並びに太陽電池
US5316205A (en) * 1993-04-05 1994-05-31 Motorola, Inc. Method for forming gold bump connection using tin-bismuth solder

Also Published As

Publication number Publication date
DE69503824T2 (de) 1999-04-15
DE69503824D1 (de) 1998-09-10
EP0678908A1 (en) 1995-10-25
JP2758373B2 (ja) 1998-05-28
EP0678908B1 (en) 1998-08-05
MY113781A (en) 2002-05-31
KR950030285A (ko) 1995-11-24
CN1111822A (zh) 1995-11-15
JPH07297229A (ja) 1995-11-10
KR0167470B1 (ko) 1999-02-01
TW267249B (enExample) 1996-01-01
US5391514A (en) 1995-02-21

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20150327

Granted publication date: 20010530