CN106626580B - 复合积层板 - Google Patents
复合积层板 Download PDFInfo
- Publication number
- CN106626580B CN106626580B CN201610630804.9A CN201610630804A CN106626580B CN 106626580 B CN106626580 B CN 106626580B CN 201610630804 A CN201610630804 A CN 201610630804A CN 106626580 B CN106626580 B CN 106626580B
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- Prior art keywords
- layer
- silane
- double bond
- metal foil
- compound
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- 239000002131 composite material Substances 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 150
- 229910000077 silane Inorganic materials 0.000 claims abstract description 69
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000011888 foil Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 239000013032 Hydrocarbon resin Substances 0.000 claims abstract description 40
- 229920006270 hydrocarbon resin Polymers 0.000 claims abstract description 40
- 239000012790 adhesive layer Substances 0.000 claims abstract description 37
- 125000000524 functional group Chemical group 0.000 claims description 28
- -1 isocyanurate compound Chemical class 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000003505 polymerization initiator Substances 0.000 claims description 8
- VMAWODUEPLAHOE-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C=C[Si]1(C)O[Si](C)(C=C)O[Si](C)(C=C)O[Si](C)(C=C)O1 VMAWODUEPLAHOE-UHFFFAOYSA-N 0.000 claims description 7
- MPJPKEMZYOAIRN-UHFFFAOYSA-N 1,3,5-tris(2-methylprop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound CC(=C)CN1C(=O)N(CC(C)=C)C(=O)N(CC(C)=C)C1=O MPJPKEMZYOAIRN-UHFFFAOYSA-N 0.000 claims description 6
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical group CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 6
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 claims description 5
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 claims description 5
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 claims description 5
- 125000004648 C2-C8 alkenyl group Chemical group 0.000 claims description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- MABAWBWRUSBLKQ-UHFFFAOYSA-N ethenyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C=C MABAWBWRUSBLKQ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001451 organic peroxides Chemical group 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims 1
- DDJSWKLBKSLAAZ-UHFFFAOYSA-N cyclotetrasiloxane Chemical compound O1[SiH2]O[SiH2]O[SiH2]O[SiH2]1 DDJSWKLBKSLAAZ-UHFFFAOYSA-N 0.000 claims 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 claims 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 claims 1
- 238000005728 strengthening Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 24
- 239000011889 copper foil Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 239000002904 solvent Substances 0.000 description 10
- 230000003014 reinforcing effect Effects 0.000 description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000004697 Polyetherimide Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 4
- 229920001601 polyetherimide Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000007763 reverse roll coating Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- YKWNUUMGDLCFOD-UHFFFAOYSA-N C(=C)[Si](OCCOC)(OCCOC)OCCOC.C(=C)[Si](OCCOC)(OCCOC)OCCOC Chemical compound C(=C)[Si](OCCOC)(OCCOC)OCCOC.C(=C)[Si](OCCOC)(OCCOC)OCCOC YKWNUUMGDLCFOD-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- NNBRCHPBPDRPIT-UHFFFAOYSA-N ethenyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C=C NNBRCHPBPDRPIT-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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Abstract
一种复合积层板，包括：金属箔层、硅烷层、强化接着层、以及碳氢树脂层。所述硅烷层置于所述金属箔层以及所述碳氢树脂层之间。所述强化接着层置于所述硅烷层以及所述碳氢树脂层之间。所述复合积层板中的金属箔层与碳氢树脂层间具有好的粘着强度。
Description
技术领域
本发明是有关于一种电子产品的基板，且特别是有关于一种复合积层板。
背景技术
新世代的电子产品趋向轻薄短小，并且需具备高频传输的能力，因此电路板的配线走向高密度化，且电路板的材料选用走向更严谨的需求。一般而言，高频电子元件会与电路板接合。为了维持传输速率及保持传输讯号完整性，电路板的基板材料必须兼具较低的介电常数(dielectric constant)及介电损耗(又称损失因子，dissipation factor)，这是因为基板的讯号传送速度与基板材料的介电常数的平方根成反比，故基板材料的介电常数通常越小越好；另一方面，由于介电损耗越小代表讯号传递的损失越少，故介电损耗较小的材料所能提供的传输品质也较为良好。
一般电路板的基板为金属箔与碳氢树脂层以压合方式相结合，以提高介电常数及介电损耗值，并提升难燃性与吸湿性，金属箔与碳氢树脂层间的粘着力会影响其制成的电路板的特性，进而影响其电子产品的功能和可靠度。然而，目前具有良好介电性质的碳氢树脂材料与金属箔间的粘着力较差，导致影响其制成电子产品的功能和可靠度。
因此，开发出具有低介电常数以及低介电损耗的基板，并将其应用于高频电路板的制造，乃是现阶段相关技术领域重要课题。
发明内容
本发明在于提供一种复合积层板，所述积层板的金属箔层与碳氢树脂层间具有好的粘着强度。
本发明一实施例提供的一种复合积层板，包括：金属箔层、硅烷层、强化接着层、以及碳氢树脂层。所述硅烷层，置于所述金属箔层以及碳氢树脂层之间。所述强化接着层，置于所述硅烷层以及碳氢树脂层之间。
本发明另一实施例提供的一种复合积层板，包括：第一金属箔层、第一硅烷层、第一强化接着层、碳氢树脂层、第二强化接着层、第二硅烷层、以及第二金属箔层。所述碳氢树脂层，置于所述第一金属箔层以及所述第二金属箔层之间。所述第一硅烷层，置于所述第一金属箔层以及所述碳氢树脂层之间。所述第一强化接着层，置于所述第一硅烷层以及所述碳氢树脂层之间。所述第二硅烷层，于所述第二金属箔层以及所述碳氢树脂层之间。所述第二强化接着层，置于所述第二硅烷层以及所述碳氢树脂层之间。
为让本发明的上述特征和优点能更明显易懂，下文特举出数个实施例，并配合所附图式作详细说明如下。
附图简述
图1为根据本发明一实施例所绘的复合积层板的剖面示意图。
图2为根据本发明另一实施例所绘的复合积层板的剖面示意图。
符号说明
1、1’：复合积层板
10：金属箔层
10a：第一金属箔层
10b：第二金属箔层
20：硅烷层
20a：第一硅烷层
20b：第二硅烷层
30：强化接着层
30a：第一强化接着层
30b：第二强化接着层
40：碳氢树脂层
实施方式
以下详细叙述本发明内容的实施例。实施例所提出的实施细节为举例说明之用，并非对本发明内容欲保护的范围做限缩。具有通常知识者当可依据实际实施方面的需要对所述实施细节加以修饰或变化。本发明所述的“一”表示为“至少一”。
请参照图1，本发明所述的复合积层板1可包含：金属箔层10、硅烷层20、强化接着层30以及碳氢树脂层40。硅烷层20置于金属箔层10以及碳氢树脂层40之间，强化接着层30置于硅烷层20以及碳氢树脂层40之间。
根据本发明实施例，所述金属箔层10的材质可例如为铜、铝、铁、银、钯、镍、铬、钼、钨、锌、锰、钴、金、锡、铅、不锈钢所制成的导电性箔片。以铜箔为例，本实施例使用的铜箔可以是精炼或碾制铜箔片，也可采用电沉积铜箔片，而一般电沉积铜箔片具有光泽面与粗糙面，而本实施例的硅烷层可形成于所述铜箔的光泽面或粗糙面。
根据本发明一实施例，所述金属箔层10的均方根粗糙度(root-mean-squareroughness)为Rq≤0.6微米、表面的十点平均粗糙度为Rz≤5μm。
根据本发明一实施例，所述硅烷层20可包含具有双键官能基的硅烷化合物。根据本发明一实施例，所述具有双键官能基的硅烷化合物可以具有如化学式R1-Si(OR2)3的结构，其中R1为C2-C8的链烯基、R2为C1-C8的烷基，R1可以为乙烯基(vinyl)或烯丙基(allyl)，R2可以为CH3或C2H5，例如乙烯基三甲氧基硅烷(vinyl trimethoxysilane)、乙烯基三乙氧基硅烷(vinyl triethoxysilane)、乙烯基三(2-甲氧基乙氧基)硅烷(vinyl tri(2-methoxyethoxy)silane)、乙烯基三异丙氧基硅烷(Vinyl trisopropoxysilane)、烯丙基三甲氧基硅烷(allyltrimethoxysilane)、烯丙基三乙氧基硅烷(allyltriethoxysilane)。
在本发明实施例中硅烷化合物或混合物可以单独或混合适合的溶剂涂布于金属箔片表面，一般是以适当溶剂将硅烷化合物分散再利用反转滚筒涂布、刮刀涂布、浸渍涂布或喷刷方式涂布于金属箔片上形成湿膜，再经一段式烘烤制成，可例如为在130℃下烘烤5～15分钟，形成具有硅烷层20的金属箔层10。
根据本发明一实施例，所述强化接着层30的组成物可包含具有3个以上双键官能基的化合物与聚合起始剂，在本发明实施例中基于1重量份的所述具有3个以上双键官能基的化合物，所述聚合起始剂的重量份介于0.01-0.3。根据本发明一实施例，所述具有3个以上双键官能基的化合物可以为具有3个以上双键官能基的异三聚氰酸酯类化合物，例如为三甲基烯丙基异三聚氰酸酯(trimethylallyl isocyanurate，TMAIC)、三烯丙基异三聚氰酸酯(triallyl isocyanurate，TAIC)，或是具有3个以上双键官能基的环四硅氧烷(cyclotetrasiloxane)类化合物，例如为四甲基四乙烯基环四硅氧烷(tetramethyltetravinyl cyclotetrasiloxane)(简称TMTVC)，或是具有3个以上双键官能基的多面体低聚倍半硅氧烷(polyhedral oligomeric silsesquioxanes，简称POSS)，例如为八乙烯基-POSS(octavinyl-POSS)。所述聚合起始剂可为有机过氧化物，例如为异丙苯过氧化氢(cumene hydroperoxide)。在本发明实施例中所述强化接着层30的材料可更包含溶剂，所述溶剂可以为甲乙酮(methyl ethyl ketone，简称MEK)，在本发明实施例中所述具有3个以上双键官能基的化合物的浓度介于0.1-50wt％。
上述强化接着层30的材料涂布于硅烷层20表面，一般是以适当溶剂，如甲乙酮将强化接着层30的材料分散，再利用反转滚筒涂布、刮刀涂布、浸渍涂布或喷刷方式涂布于具硅烷层20的金属箔层10上形成湿膜，再经一段式烘烤制成，可例如为在50～70℃下烘烤5～15分钟，形成具有强化接着层30与硅烷层20的金属箔层10。于一实施例中强化接着层30及硅烷层20在金属箔层10上所形成的干燥薄膜厚度总和小于2微米。
根据本发明一实施例，所述碳氢树脂层40的材料可例如为聚酰亚胺(polyimide、PI)、聚碳酸酯(polycarbonate、PC)、聚醚砜(polyethersulfone、PES)、聚降冰片烯(polynorbornene、PNB)、聚醚酰亚胺(polyetherimide、PEI)、聚萘二甲酸乙二酯(polyethylene naphthalate、PEN)、聚对苯二甲酸乙二醇酯(polyethyleneterephthalate、PET)、聚二丁烯或上述的组合。上述碳氢树脂层40，一般是以压合方式与上述的金属箔层10互相结合。
请参照图2，其是根据本发明另一实施例所绘的复合积层板的剖面示意图。本实施例的复合积层板1’包括：第一金属箔层10a、第一硅烷层20a、第一强化接着层30a、碳氢树脂层40、第二金属箔层10b、第二硅烷层20b以及第二强化接着层30b。碳氢树脂层40置于第一金属箔层10a以及第二金属箔层10b之间，第一硅烷层20a置于第一金属箔层10a以及碳氢树脂层40之间，第一强化接着层30a置于第一硅烷层20a以及碳氢树脂层40之间，第二硅烷层20b置于第二金属箔层10b以及碳氢树脂层40之间，第二强化接着层30b置于第二硅烷层20b以及碳氢树脂层40之间。
根据本发明实施例，所述金属箔层10a及10b的材质可例如为铜、铝、铁、银、钯、镍、铬、钼、钨、锌、锰、钴、金、锡、铅、不锈钢所制成的导电性箔片。以铜箔为例，本实施例使用的铜箔可以是精炼或碾制铜箔片，也可采用电沉积铜箔片，而一般电沉积铜箔片具有光泽面与粗糙面，而本实施例的硅烷层可形成于所述铜箔的光泽面或粗糙面。
根据本发明一实施例，所述金属箔层10a及10b的均方根粗糙度(root-mean-square roughness)为Rq≤0.6微米、表面的十点平均粗糙度为Rz≤5μm。
根据本发明一实施例，所述硅烷层20a及20b可包含具有双键官能基的硅烷化合物。根据本发明一实施例，所述具有双键官能基的硅烷化合物可以具有如化学式R1-Si(OR2)3的结构，其中R1为C2-C8的链烯基、R2为C1-C8的烷基，R1可以为乙烯基(vinyl)或烯丙基(allyl)，R2可以为CH3或C2H5，例如乙烯基三甲氧基硅烷(vinyl trimethoxysilane)、乙烯基三乙氧基硅烷(vinyl triethoxysilane)、乙烯基三(2-甲氧基乙氧基)硅烷(vinyl tri(2-methoxyethoxy)silane)、乙烯基三异丙氧基硅烷(Vinyl trisopropoxysilane)、烯丙基三甲氧基硅烷(allyltrimethoxysilane)、烯丙基三乙氧基硅烷(allyltriethoxysilane)。
在本发明实施例中硅烷化合物或混合物可以单独或混合适合的溶剂涂布于金属箔片表面，一般是以适当溶剂将硅烷化合物分散，再利用反转滚筒涂布、刮刀涂布、浸渍涂布或喷刷方式涂布于金属箔片上形成湿膜，再经一段式烘烤制成，可例如为在130℃下烘烤5～15分钟，形成分别具有硅烷层20a、20b的金属箔层10a、10b。
根据本发明一实施例，所述强化接着层30a及30b的材料可包含具有3个以上双键官能基的化合物与聚合起始剂，在本发明实施例中基于1重量份的所述具有3个以上双键官能基的化合物，所述聚合起始剂的重量份介于0.01-0.3。根据本发明一实施例，所述具有3个以上双键官能基的化合物可以为具有3个以上双键官能基的异三聚氰酸酯类化合物，例如为三甲基烯丙基异三聚氰酸酯(trimethylallyl isocyanurate，TMAIC)、三烯丙基异三聚氰酸酯(triallyl isocyanurate，TAIC)，或是具有3个以上双键官能基的环四硅氧烷(cyclotetrasiloxane)类化合物，例如为四甲基四乙烯基环四硅氧烷(tetramethyltetravinyl cyclotetrasiloxane，简称TMTVC)，或是具有3个以上双键官能基的多面体低聚倍半硅氧烷(polyhedral oligomeric silsesquioxanes，简称POSS)，例如为八乙烯基-POSS(octavinyl-POSS)。所述聚合起始剂可为有机过氧化物，例如为异丙苯过氧化氢(cumene hydroperoxide)。在本发明实施例中所述强化接着层30的材料可更包含溶剂，所述溶剂可以为甲乙酮(methyl ethyl ketone，简称MEK)，在本发明实施例中所述具有3个以上双键官能基的化合物的浓度介于0.1-50wt％。
上述强化接着层30a及30b的材料涂布于硅烷层20a及20b表面，一般是以适当溶剂，如甲乙酮将强化接着层30a或20b的材料分散再利用反转滚筒涂布、刮刀涂布、浸渍涂布或喷刷方式涂布于分别具有硅烷层20a、20b的金属箔层10a、10b上形成湿膜，再经一段式烘烤制成，可例如为在50～70℃下烘烤5～15分钟，形成分别具有强化接着层30a、30b与硅烷层20a、20b的金属箔层10a、10b。于一实施例中强化接着层30a、30b分别与硅烷层20a、20b在金属箔层10a及10b上所形成的干燥薄膜厚度总和小于2微米。
根据本发明一实施例，所述碳氢树脂层40的材料可例如为聚酰亚胺(polyimide、PI)、聚碳酸酯(polycarbonate、PC)、聚醚砜(polyethersulfone、PES)、聚降冰片烯(polynorbornene、PNB)、聚醚酰亚胺(polyetherimide、PEI)、聚萘二甲酸乙二酯(polyethylene naphthalate、PEN)、聚对苯二甲酸乙二醇酯(polyethyleneterephthalate、PET)、聚二丁烯或上述的组合。将上述碳氢树脂层40置于具有强化接着层30a及硅烷层20a的金属箔层10a及具有强化接着层30b及硅烷层20b的金属箔层10b之间，再以压合方式互相结合。
实施例
以下实施例所提及的量测仪器及方法：在下列实施例的量测剥离强度的仪器购自弘达仪器股份有限公司、型号HT-9102、量测方法按IPC-TM-650规范量测90°撕离强度。
(1)硅烷层涂料制备：将乙烯基三甲氧基硅烷分散于水中，再滴入醋酸调整溶液至pH值约为4，制成重量百分比为1％的硅烷水溶液。
(2)强化接着层I涂料制备：将2克八乙烯基-POSS(octavinyl-POSS)及0.4克异丙苯过氧化氢分散于2克甲乙酮中于常温(约25℃)搅拌，得到强化接着层I涂料。
(3)强化接着层II涂料制备：将4克四甲基四乙烯基环四硅氧烷(tetramethyltetravinyl cyclotetrasiloxane，TMTVC)及0.4克异丙苯过氧化氢分散于2克甲乙酮中于常温(约25℃)搅拌，得到强化接着层II涂料。
(4)强化接着层III涂料制备：将2克TMAIC及0.4克异丙苯过氧化氢分散于2克甲乙酮中于常温(约25℃)搅拌，得到强化接着层III涂料。
实施例1-3复合积层板的制作
复合积层板制作：取铜箔基材(购自三井，型号HS-VSP，厚度约35微米、表面粗糙度Rq～0.5)，将前述的硅烷层涂料溶液喷涂于所述铜箔基材上，再放入烘箱进行烘烤。在130℃烘烤10分钟。得到具有硅烷层的铜箔基材。接着，将前述的强化接着层涂料I、II及III溶液喷涂于所述具有硅烷层的铜箔基材上，再放入烘箱60℃烘烤10分钟，得到具有厚度总和为小于1微米的强化接着层及硅烷层的铜箔基材。然后，将碳氢树脂层(Rogers Co.生产，型号RO-4450，厚度＝4mil)压合于所述具有强化接着层及硅烷层的铜箔基材，压合步骤及条件依所述RO4450建议的压合条件执行，得到复合积层板I-III，其详细组成及其剥离强度如表1所示。
比较实施例1
本比较实施例与实施例1-3类似，差别在于铜箔基板与树脂RO-4450间仅具有硅烷层。其剥离强度如表1所示。
表1
由表1的剥离强度可知，铜箔基板与树脂间具有本发明的硅烷层及强化接着层者其剥离强度较仅具有硅烷层的比较例的剥离强度高，亦即本发明的复合积层板具有较佳的粘着力。
虽然本发明的实施例揭露如上所述，然并非用以限定本发明，任何熟习相关技艺者，在不脱离本发明的精神和范围内，举凡依本发明申请范围所述的形状、构造、特征及数量当可做些许的变更，因此本发明的专利保护范围须视本说明书所附的权利要求所界定者为准。
Claims (11)
1.一种复合积层板，其特征在于包括：
金属箔层；
碳氢树脂层；
硅烷层，设置于所述金属箔层以及所述碳氢树脂层间；以及
强化接着层，设置于所述硅烷层以及所述碳氢树脂层间，其中所述强化接着层材料包括：具有3个以上双键官能基的化合物与聚合起始剂，所述具有3个以上双键官能基的化合物为具有3个以上双键官能基的异三聚氰酸酯类化合物、具有3个以上双键官能基的环四硅氧烷类化合物或具有3个以上双键官能基的多面体低聚倍半硅氧烷。
2.如权利要求1所述的复合积层板，其特征在于，所述硅烷层是具有双键官能基的硅烷化合物。
3.如权利要求2所述的复合积层板，其特征在于，所述具有双键官能基的硅烷化合物具有如化学式R1-Si(OR2)3的结构，其中R1为C2-C8的链烯基、R2为C1-C8的烷基。
4.如权利要求2所述的复合积层板，其特征在于，所述具有双键官能基的硅烷化合物具有如化学式R1-Si(OR2)3的结构，其中R1为乙烯基或丙烯基，R2为CH3或C2H5。
5.如权利要求2所述的复合积层板，其特征在于，所述具有双键官能基的硅烷化合物选自乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、乙烯基三(2-甲氧基乙氧基)硅烷、乙烯基三异丙氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷。
6.如权利要求1所述的复合积层板，其中基于1重量份的所述具有3个以上双键官能基的化合物，所述聚合起始剂的重量份介于0.01-0.3。
7.如权利要求1所述的复合积层板，其特征在于，所述具有3个以上双键官能基的异三聚氰酸酯类化合物包括三甲基烯丙基异三聚氰酸酯或三烯丙基异三聚氰酸酯。
8.如权利要求1所述的复合积层板，其特征在于，所述具有3个以上双键官能基的环四硅氧烷类化合物包括四甲基四乙烯基环四硅氧烷。
9.如权利要求1所述的复合积层板，其特征在于，所述具有3个以上双键官能基的多面体低聚倍半硅氧烷包括八乙烯基-POSS。
10.如权利要求1所述的复合积层板，其特征在于，所述聚合起始剂为有机过氧化物。
11.一种双面复合积层板，其特征在于包括：
第一金属箔层；
第二金属箔层；
碳氢树脂层，置于所述第一金属箔层以及所述第二金属箔层间；
第一硅烷层，置于所述第一金属箔层以及所述碳氢树脂层间；
第一强化接着层，置于所述第一硅烷层以及所述碳氢树脂层间；
第二硅烷层，置于所述第二金属箔层以及所述碳氢树脂层间；以及
第二强化接着层，置于所述第二硅烷层以及所述碳氢树脂层间，其中所述第一强化接着层以及第二强化接着层材料包括：具有3个以上双键官能基的化合物与聚合起始剂，所述具有3个以上双键官能基的化合物为具有3个以上双键官能基的异三聚氰酸酯类化合物、具有3个以上双键官能基的环四硅氧烷类化合物或具有3个以上双键官能基的多面体低聚倍半硅氧烷。
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| TW105119525A TWI617454B (zh) | 2015-10-28 | 2016-06-22 | 複合積層板 |
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| CN107785503B (zh) * | 2017-10-24 | 2019-03-08 | 京东方科技集团股份有限公司 | 金属封装结构及制备方法、显示面板的封装方法、显示装置 |
| TWI706995B (zh) | 2017-12-05 | 2020-10-11 | 財團法人工業技術研究院 | 樹脂組成物 |
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