CN106601706A - 一种半导体器件和电子装置 - Google Patents
一种半导体器件和电子装置 Download PDFInfo
- Publication number
- CN106601706A CN106601706A CN201510672891.XA CN201510672891A CN106601706A CN 106601706 A CN106601706 A CN 106601706A CN 201510672891 A CN201510672891 A CN 201510672891A CN 106601706 A CN106601706 A CN 106601706A
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- substrate
- layer
- hole
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000010410 layer Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 239000011229 interlayer Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 230000003068 static effect Effects 0.000 claims description 13
- 230000001012 protector Effects 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract 5
- 239000012212 insulator Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510672891.XA CN106601706B (zh) | 2015-10-16 | 2015-10-16 | 一种半导体器件和电子装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510672891.XA CN106601706B (zh) | 2015-10-16 | 2015-10-16 | 一种半导体器件和电子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106601706A true CN106601706A (zh) | 2017-04-26 |
CN106601706B CN106601706B (zh) | 2019-04-09 |
Family
ID=58553853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510672891.XA Active CN106601706B (zh) | 2015-10-16 | 2015-10-16 | 一种半导体器件和电子装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106601706B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112420675A (zh) * | 2020-11-13 | 2021-02-26 | 武汉新芯集成电路制造有限公司 | 半导体器件 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1845331A (zh) * | 2005-04-07 | 2006-10-11 | 冲电气工业株式会社 | 半导体器件 |
CN101038912A (zh) * | 2006-03-17 | 2007-09-19 | 三星电子株式会社 | 具有改善的静电放电保护功能的半导体器件 |
CN101385143A (zh) * | 2006-02-17 | 2009-03-11 | Nxp股份有限公司 | 集成电路中的静电放电保护 |
CN102598254A (zh) * | 2009-10-23 | 2012-07-18 | 新思科技有限公司 | 用于硅通孔的esd/天线二极管 |
US20130119502A1 (en) * | 2011-11-16 | 2013-05-16 | Analog Devices, Inc. | Electrical overstress protection using through-silicon-via (tsv) |
WO2014191280A1 (de) * | 2013-05-31 | 2014-12-04 | Osram Opto Semiconductors Gmbh | Träger für einen optoelektronischen halbleiterchip und optoelektronisches bauteil |
US20150214211A1 (en) * | 2014-01-30 | 2015-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional integrated circuit having esd protection circuit |
-
2015
- 2015-10-16 CN CN201510672891.XA patent/CN106601706B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1845331A (zh) * | 2005-04-07 | 2006-10-11 | 冲电气工业株式会社 | 半导体器件 |
CN101385143A (zh) * | 2006-02-17 | 2009-03-11 | Nxp股份有限公司 | 集成电路中的静电放电保护 |
CN101038912A (zh) * | 2006-03-17 | 2007-09-19 | 三星电子株式会社 | 具有改善的静电放电保护功能的半导体器件 |
CN102598254A (zh) * | 2009-10-23 | 2012-07-18 | 新思科技有限公司 | 用于硅通孔的esd/天线二极管 |
US20130119502A1 (en) * | 2011-11-16 | 2013-05-16 | Analog Devices, Inc. | Electrical overstress protection using through-silicon-via (tsv) |
WO2014191280A1 (de) * | 2013-05-31 | 2014-12-04 | Osram Opto Semiconductors Gmbh | Träger für einen optoelektronischen halbleiterchip und optoelektronisches bauteil |
US20150214211A1 (en) * | 2014-01-30 | 2015-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional integrated circuit having esd protection circuit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112420675A (zh) * | 2020-11-13 | 2021-02-26 | 武汉新芯集成电路制造有限公司 | 半导体器件 |
CN112420675B (zh) * | 2020-11-13 | 2024-03-26 | 武汉新芯集成电路制造有限公司 | 半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
CN106601706B (zh) | 2019-04-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20180601 Address after: No. 18 Zhangjiang Road, Pudong New Area, Shanghai Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Core integrated circuit (Ningbo) Co., Ltd. Address before: No. 18 Zhangjiang Road, Pudong New Area, Shanghai Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation Applicant before: Semiconductor Manufacturing International (Beijing) Corporation |
|
GR01 | Patent grant | ||
GR01 | Patent grant |