CN106461439B - 传感器及其制造方法 - Google Patents

传感器及其制造方法 Download PDF

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Publication number
CN106461439B
CN106461439B CN201580031470.7A CN201580031470A CN106461439B CN 106461439 B CN106461439 B CN 106461439B CN 201580031470 A CN201580031470 A CN 201580031470A CN 106461439 B CN106461439 B CN 106461439B
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base plate
circuit substrate
printed base
component
resin
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CN106461439A (zh
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渡边翼
河野务
星加浩昭
余语孝之
三木崇裕
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • G—PHYSICS
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    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G01F1/36—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction
    • G01F1/38—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction the pressure or differential pressure being measured by means of a movable element, e.g. diaphragm, piston, Bourdon tube or flexible capsule
    • G—PHYSICS
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    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
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Abstract

电路基板在以露出搭载于电路基板上的半导体零件的状态与壳体一体地镶嵌模制成形的模块中，降低由于用于对模制树脂进行截流的金属模具向电路基板的加压而产生的电路基板的歪斜。电路基板在以露出搭载于电路基板上的半导体零件的状态与壳体一体地镶嵌模制成形的模块中，通过在电路基板上的金属模具按压部的投影区域设置具有比电路基板小的弹性率的材料而降低电路基板的歪斜。

Description

传感器及其制造方法
技术领域
本发明涉及传感器及其制造方法。
背景技术
作为本技术领域的背景技术，具有日本特开2012-163504号公报(专利文献1)。该公报记载了：“一种空气流量测量装置，其具有以下构造，即、在形成有电子电路的电路基板上设置对温度、湿度等物理量进行测量的传感元件，将上述电子驱动电路配置于框体之中，将上述传感元件暴露于吸入空气，在该空气流量测量装置中，在上述电路基板与玻璃或树脂涂覆层之间设置至少一层以上的绝缘层，在上述绝缘层下配置进行上述传感元件与上述电子驱动电路的连接的导体配线。”。
现有技术文献
专利文献
专利文献1：日本特开2012-163504号公报
发明内容
发明所要解决的课题
本发明的目的在于提供一种在电路基板的镶嵌模制成形中，能够降低电路基板的歪斜的电路基板构造。
用于解决课题的方案
本发明的镶嵌模制成形的构造物为镶嵌模制品，其包括安装有半导体零件的印刷基板，印刷基板上的未搭载半导体零件的区域被第一树脂覆盖，在印刷基板的主面和第一树脂重叠的区域的外侧设置有第二树脂，该第二树脂具有比印刷基板的材料的弹性率小的弹性率。
发明的效果
根据本发明，能够在使用镶嵌模制成形的情况下抑制电路基板的歪斜、破裂。
附图说明
图1是表示本发明的实施例1的电路模块的安装结构的图。
图2是以图1的A-A线切断本发明的实施例1的电路模块的剖视图。
图3是表示用于在本发明的实施例1的电路模块形成壳体且固定电路模块的金属模具构造的剖视图。
图4是表示在本发明的实施例1的电路模块形成有壳体的电路基板的安装构造的剖视图。
图5是表示本发明的实施例2的电路模块的安装结构的图。
图6是以图5的A-A切断本发明的实施例2的电路模块的剖视图。
图7是表示用于在本发明的实施例2的电路模块形成壳体且固定电路模块的金属模具构造的剖视图。
图8是表示本发明的实施例3的电路模块的安装结构的图。
图9是以图8的A-A下切断本发明的实施例3的电路模块的剖视图。
图10是表示用于在本发明的实施例3的电路模块形成壳体且固定电路模块的金属模具构造的剖视图。
图11是表示在本发明的实施例3的电路模块形成有壳体的电路基板的安装构造的剖视图。
图12是表示本发明的实施例4的电路模块的安装结构的图。
图13是用图12的A-A下切断本发明的实施例4的电路模块的剖视图。
图14是表示用于在本发明的实施例4的电路模块形成壳体且固定电路模块的金属模具构造的剖视图。
图15是表示在本发明的实施例4的电路模块形成有壳体的电路基板的安装构造的剖视图。
具体实施方式
当前，在汽车等的内燃机搭载有包括传感器、发动机控制单元、电子控制节气门等的电子电路的模块。这些模块使用了搭载有半导体零件的电路基板，该电路基板收纳于壳体内部。一直以来，将搭载有半导体零件的电路基板通过粘接剂接合且固定于树脂制壳体。但是，该方法需要粘接剂的涂布工序、硬化工序，模块制造工序中的生产率会降低。因此，作为其它方法，具有镶嵌模制成形的方法。
镶嵌模制成形是将电路基板配置于金属模具内，在电路基板的周围流动树脂而形成树脂制壳体，从而固定电路基板的方法。该镶嵌模制成形的方法因为使熔融的树脂直接接触电路基板，所以与树脂的固化同时地接合电路基板和壳体，能够简化接合工序。在此，当壳体树脂与电路基板上的半导体零件接触时，易于对半导体零件、半导体零件与电路基板的接合部施加因树脂的收缩而引起的载荷。因此，需要用金属模具将半导体零件的搭载区域围起来，使该搭载区域及其周边的基板不被树脂覆盖，进而树脂流入而形成壳体。但是，在该方法中，将金属模具与基板挤压来对树脂进行节流，因此，存在由于来自金属模具的应力而基板变形，在基板产生歪斜、破裂的问题。
(实施例1)
以下的实施例作为使用了基板的镶嵌模制成形的例子，以搭载于汽车的内燃机的吸入空气量传感器为例进行列举并说明。吸入空气量传感器是测量气体(空气)的流量的流量传感器，其为了用于控制搭载于内燃机的电子控制燃料喷射装置的吸入空气量而设置。吸入空气量传感器使用了具有薄壁的膜片的传感器芯片，其机理在于，通过控制芯片来采集·修正传感器芯片的测量数据，且向外部输出。
以下，参照附图来进行说明。
图1表示搭载有具有控制电路等的半导体芯片的电路模块，图2表示以A-A线切断图1的半导体芯片的电路模块的安装结构。
在图2中，电路模块例如搭载了第一半导体芯片3和第二半导体芯片4，第一半导体芯片3在由层叠玻璃纤维和树脂而成的材料形成的印刷基板1上具有膜片2，第二半导体芯片4具有控制电路。印刷基板1和第一半导体芯片3通过第一粘接剂5而装配，印刷基板1和第二半导体芯片4通过第二粘接剂6而装配。在印刷基板1的内部形成有导体配线8和导体配线的配线焊盘9，第一半导体芯片3和第二半导体芯片4经由导线7、导体配线8、以及配线焊盘9而连接，第二半导体芯片4经由导线7而与导体配线8连接。为了保护导线7，设置有浇注件10。
粘接上述的印刷基板1和第一半导体芯片3的第一粘接剂5、粘接印刷基板1和第二半导体芯片4的第二粘接剂6、用于保护导线7的浇注件9例如能够使用环氧树脂、聚氨基甲酸乙酯树脂等热固性树脂、聚酰亚胺、丙烯酸酯树脂等热塑性树脂，而且也能够向树脂中混入玻璃、云母等填充料。
将以上的电路模块的安装构造作为对象，对用于在使搭载有半导体零件的区域露出的状态下接合电路模块和壳体的制造方法进行说明。
图3表示用于在使搭载有半导体零件的区域露出的状态下对电路模块进行压膜的金属模具构造。向设有上金属模具11、下金属模具12的金属模具中放入安装好的电路模块和连接引线13，通过金属模具的紧固部15按压电路模块后形成空洞部14，向空洞部14填充树脂16。
然后，如图4所示，经由导线17来连接电路模块的配线焊盘9和连接引线13。为了保护作为含有导线17的空间的电路室18，再在上下分别接合上盖19、下盖20。通过以上的工序，在使电路模块上的半导体零件露出的状态下，接合电路模块和壳体，完成能够向外部输出来自电路模块的检测信号的传感器模块。
在此，对现有的镶嵌模制成形的问题点和本实施例的特征进行说明。在镶嵌模制电路模块时，需要以树脂16不流出到半导体零件的方式，通过金属模具的紧固部15按压印刷基板1。此时，若紧固部15的载荷过大，则在印刷基板1会产生歪斜。另外，在印刷基板1的厚度在制造上不统一且增大的情况下，还存在该歪斜增大的问题。一直以来，在紧固部15的位置什么都不配置，在金属模具与印刷基板1直接接触的状态下，模制树脂流入。在本实施例中，如图3及图4所示，在印刷基板1上的金属模具紧固部15追加弹性系数比印刷基板1的平均的弹性系数小的部件21。如图3所示，使用上金属模具11和下金属模具12，通过紧固部15按压电路模块的设置有部件21的区域，向空洞部14填充树脂17而形成壳体，同时结合电路模块和壳体。
在此所说的弹性系数是指，在以“应力σ与应变ε成比例”的形式表达弹性体内的应力和应变互相成比例的胡克定律时、即σ＝E形中的比例常数E。
例如，部件21的弹性系数和印刷基板1的弹性系数的比较优选在温度25℃(室温)下进行比较。另外，弹性系数的比较能够在部件21的弹性系数与构成印刷基板1的基材的弹性系数之间进行。
以上，虽然对部件21和印刷基板1的弹性系数的比较进行了说明，但是，其基本理念点在于，使用硬度比印刷基板1软的部件21。在此所谓的硬度例如能够通过室温下的维氏硬度、显微维氏硬度、布氏硬度、以及洛氏硬度中的任一个进行比较。
对于该部件21，若满足例如上述的条件，则能够使用环氧树脂、苯酚树脂等热固性树脂、聚碳酸酯、聚对酞酸乙二酯等热塑性树脂，而且也能够向树脂中混入玻璃、云母等填充料。
由此，在镶嵌模制成形时，能够通过部件21来降低金属模具对电路基板施加的载荷，降低在印刷基板1产生的歪斜。
(实施例2)
接下来，对在实施例1的印刷基板1中，在配线之上配置有配线保护抗蚀剂的情况进行说明。
对于图5，在基板上形成有在图1中埋入印刷基板1内的配线8，为了对其进行保护，配置有配线保护抗蚀剂23。
上述的部件21也能够应用于图5所述的电路基板的结构。该情况下，若部件21满足弹性系数比电路基板低的条件，则也能够使用与配线保护抗蚀剂23相同的材料。在该实施例中，在配线保护抗蚀剂23的设置工序中也能够同时地进行部件21的设置，因此，能够简化工序。
(实施例3)
图8表示实施方式3的电路模块的安装结构。与实施例1、2较大的不同点在于，对图8～11所示的接合部27的区域也追加相当于实施例1、2中的部件21的部件24。
在图8中，第三半导体芯片25经由从第三半导体芯片25导出的外引线26而与配线焊盘9连接。将该安装构造作为对象，为了在使电路模块的搭载有半导体零件的区域露出的状态下，接合电路模块和壳体，进行镶嵌模制成形。在电路基板1的主面，在电路基板1和金属模具紧固部15重叠的区域和含有电路基板与树脂的接合部27的区域设置有部件24。
根据该实施例，无需在金属模具接触的区域高精度地进行配置，相比实施例1、2，部件24的配置容易。因此，能够改善产量的变差。再利用电路基板1与树脂16的线膨胀系数差，通过向接合部27配置部件21，从而能够缓解模制后产生的热应力，能够降低电路基板的歪斜和防止接合部的分离。
(实施例4)
本实施例是对在紧固部15和接合部27配置有导体配线22的电路基板应用了本发明的实施例。
不仅与实施例2、3同样地在导体配线22的配线焊盘9以外的区域和导体配线露出的区域28设置有配线保护抗蚀剂23，在本实施例中，还在紧固部15和接合部27配置有导体配线22。另外，在该配置于紧固部15和接合部27的导体配线22之上还配置有部件24。
将这种安装构造作为对象，为了在使电路模块的搭载有半导体零件的区域28露出的状态下，接合电路模块和壳体，进行镶嵌模制成形。使用了金属模具的镶嵌模制成形的顺序与实施例1～3相同。根据该实施例，与实施例3同样的在宽广范围上配置有部件24，因此无需在金属模具接触的区域高精度地进行配置，相比实施例1、2，部件24的配置容易。因此，能够改善产量的变差。另外，利用电路基板1与树脂16的线膨胀系数差，能够缓解模制后产生的热应力，能够降低电路基板的歪斜和防止接合部的分离。
以上，虽然示出了对吸入空气量传感器进行镶嵌模制成形而成的零件的例子，但是，本发明不限于此，能够用于对电路基板、特别是印刷基板进行镶嵌模制而成的任意的零件。
以上，基于实施方式对由本发明者提出的发明具体地进行了说明，但是，自不必说，本发明不限于上述实施方式，在不脱离其宗旨的范围内，能够进行各种变形。
符号说明
1—印刷基板，2—膜片，3—第一半导体芯片，4—第二半导体芯片，5—第一粘接剂，6—第二粘接剂，7—导线，8—导体配线，9—配线焊盘，10—浇注件，11—上金属模，12—下金属模，13—连接引线，14—空洞部，15—紧固部，16—树脂，17—导线，18—电路室，19—上盖，20—下盖，21—部件，22—导体配线，23—配线保护抗蚀剂，24—部件，25—第三半导体芯片，26—外引线，27—接合部，28—导体配线露出的区域。

Claims (4)

1.一种传感器，其包括:
印刷基板；
第一构件，其结合至印刷基板并且与印刷基板正交，其中第一构件由第一树脂形成；
一个或多个第二构件，其在印刷基板上与第一构件相邻地形成，其中一个或多个第二构件由第二树脂形成；以及
上盖，其平行于印刷基板并且附接至第一构件；
下盖，其平行于印刷基板并且附接至第一构件；
电路室，其由第一构件、上盖和下盖形成；以及
安装于印刷基板上的半导体零件，其中至少一个半导体零件位于电路室内；
其中该第二树脂具有比上述印刷基板的弹性率小的弹性率，
上述上盖和上述下盖通过上述第一构件分别支撑于印刷基板的两侧。
2.根据权利要求1所述的传感器，其特征在于，
半导体零件包括流量传感用半导体。
3.根据权利要求1所述的传感器，其特征在于，
上述第二树脂与在上述印刷基板上形成的导体配线上所设置的材料相同。
4.根据权利要求1所述的传感器，其特征在于，
上述传感器通过镶嵌模制而形成。
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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10264664B1 (en) 2015-06-04 2019-04-16 Vlt, Inc. Method of electrically interconnecting circuit assemblies
JP6435420B2 (ja) * 2015-09-30 2018-12-05 日立オートモティブシステムズ株式会社 樹脂成形体およびセンサ装置
JP6453790B2 (ja) * 2016-02-24 2019-01-16 日立オートモティブシステムズ株式会社 物理量検出装置
US10903734B1 (en) 2016-04-05 2021-01-26 Vicor Corporation Delivering power to semiconductor loads
US11336167B1 (en) 2016-04-05 2022-05-17 Vicor Corporation Delivering power to semiconductor loads
US10158357B1 (en) 2016-04-05 2018-12-18 Vlt, Inc. Method and apparatus for delivering power to semiconductors
US10785871B1 (en) * 2018-12-12 2020-09-22 Vlt, Inc. Panel molded electronic assemblies with integral terminals
JP6866121B2 (ja) 2016-11-14 2021-04-28 日立Astemo株式会社 半導体モジュール
JP6825594B2 (ja) * 2018-03-09 2021-02-03 オムロン株式会社 電子装置およびその製造方法
JP6915160B2 (ja) * 2018-05-22 2021-08-04 日立Astemo株式会社 物理量検出装置
DE102020211142B4 (de) * 2020-09-03 2022-08-18 Vitesco Technologies GmbH Gassensor für ein Fahrzeug
CN112802776B (zh) * 2020-12-31 2023-10-20 苏州首肯机械有限公司 伺服半导体封装压机智能化压力控制系统及控制方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119410A (ja) * 2002-09-24 2004-04-15 Towa Corp 樹脂封止金型
CN1852637A (zh) * 2005-04-22 2006-10-25 株式会社电装 电子电路装置及其制造方法
JP2009135317A (ja) * 2007-11-30 2009-06-18 Jatco Ltd 電気的解析の可能な制御基板ユニット
CN102348332A (zh) * 2010-07-22 2012-02-08 安森美半导体贸易公司 电路装置及其制造方法
CN103858229A (zh) * 2011-10-07 2014-06-11 富士电机株式会社 印刷基板的安装结构以及使用该结构的半导体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08236560A (ja) * 1995-03-01 1996-09-13 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3587734B2 (ja) 1999-06-30 2004-11-10 株式会社日立製作所 熱式空気流量センサ
JP2006211468A (ja) * 2005-01-31 2006-08-10 Sanyo Electric Co Ltd 半導体センサ
JP4830391B2 (ja) * 2005-07-29 2011-12-07 株式会社デンソー センサ装置の製造方法及びセンサ装置
JP4674529B2 (ja) * 2005-11-07 2011-04-20 株式会社デンソー 湿度センサ装置及びその製造方法
JP4882732B2 (ja) * 2006-12-22 2012-02-22 株式会社デンソー 半導体装置
ITMI20072099A1 (it) * 2007-10-30 2009-04-30 St Microelectronics Srl Metodo di fabbricazione di un dispositivo elettronico comprendente dispositivi mems incapsulati per stampaggio
JP5212133B2 (ja) * 2009-01-21 2013-06-19 株式会社デンソー 流量式センサ
JP5208099B2 (ja) * 2009-12-11 2013-06-12 日立オートモティブシステムズ株式会社 流量センサとその製造方法、及び流量センサモジュール
WO2012049742A1 (ja) * 2010-10-13 2012-04-19 日立オートモティブシステムズ株式会社 流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法
JP5645693B2 (ja) 2011-02-09 2014-12-24 日立オートモティブシステムズ株式会社 空気流量測定装置
JP5526065B2 (ja) * 2011-03-25 2014-06-18 日立オートモティブシステムズ株式会社 熱式センサおよびその製造方法
WO2013008273A1 (ja) * 2011-07-13 2013-01-17 日立オートモティブシステムズ株式会社 流量計
JP2013188997A (ja) * 2012-03-15 2013-09-26 Toyota Motor Corp 樹脂封止部品の製造方法
JP5965706B2 (ja) * 2012-04-12 2016-08-10 日立オートモティブシステムズ株式会社 流量センサの製造方法
JP5675716B2 (ja) * 2012-06-29 2015-02-25 日立オートモティブシステムズ株式会社 熱式空気流量センサ
JP6018903B2 (ja) * 2012-12-17 2016-11-02 日立オートモティブシステムズ株式会社 物理量センサ
JP5949667B2 (ja) * 2013-06-03 2016-07-13 株式会社デンソー モールドパッケージおよびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119410A (ja) * 2002-09-24 2004-04-15 Towa Corp 樹脂封止金型
CN1852637A (zh) * 2005-04-22 2006-10-25 株式会社电装 电子电路装置及其制造方法
JP2009135317A (ja) * 2007-11-30 2009-06-18 Jatco Ltd 電気的解析の可能な制御基板ユニット
CN102348332A (zh) * 2010-07-22 2012-02-08 安森美半导体贸易公司 电路装置及其制造方法
CN103858229A (zh) * 2011-10-07 2014-06-11 富士电机株式会社 印刷基板的安装结构以及使用该结构的半导体装置

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