CN106460227B - 单晶硅的生长方法 - Google Patents

单晶硅的生长方法 Download PDF

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Publication number
CN106460227B
CN106460227B CN201580027054.XA CN201580027054A CN106460227B CN 106460227 B CN106460227 B CN 106460227B CN 201580027054 A CN201580027054 A CN 201580027054A CN 106460227 B CN106460227 B CN 106460227B
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CN
China
Prior art keywords
monocrystalline silicon
sphering
diameter
thermal process
grown
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Active
Application number
CN201580027054.XA
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English (en)
Chinese (zh)
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CN106460227A (zh
Inventor
高沢雅纪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Publication of CN106460227A publication Critical patent/CN106460227A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201580027054.XA 2014-05-12 2015-03-11 单晶硅的生长方法 Active CN106460227B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-098976 2014-05-12
JP2014098976A JP6070626B2 (ja) 2014-05-12 2014-05-12 シリコン単結晶の育成方法
PCT/JP2015/001319 WO2015173998A1 (ja) 2014-05-12 2015-03-11 シリコン単結晶の育成方法

Publications (2)

Publication Number Publication Date
CN106460227A CN106460227A (zh) 2017-02-22
CN106460227B true CN106460227B (zh) 2019-03-22

Family

ID=54479556

Family Applications (1)

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CN201580027054.XA Active CN106460227B (zh) 2014-05-12 2015-03-11 单晶硅的生长方法

Country Status (6)

Country Link
US (1) US9988736B2 (enExample)
JP (1) JP6070626B2 (enExample)
KR (1) KR102105366B1 (enExample)
CN (1) CN106460227B (enExample)
DE (1) DE112015001883B4 (enExample)
WO (1) WO2015173998A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3940124B1 (de) * 2020-07-14 2024-01-03 Siltronic AG Kristallstück aus monokristallinem silizium
KR102808187B1 (ko) * 2021-11-29 2025-05-19 한국전자통신연구원 상이한 네트워크 로봇 컴포넌트들 간의 통신 구성 장치 및 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153009A (en) * 1998-03-17 2000-11-28 Shin-Etsu Handotai Co., Ltd. Method for producing a silicon single crystal and the silicon single crystal produced thereby
JP2009274916A (ja) * 2008-05-15 2009-11-26 Sumco Corp シリコン単結晶及びその製造方法
JP2010275137A (ja) * 2009-05-27 2010-12-09 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153A (en) 1849-03-10 Loom eoe weaving brussels carpets
US9A (en) 1836-08-10 Thomas Blanchard Method of riveting plank or made blocks
JPH11268991A (ja) * 1998-03-24 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法およびシリコン単結晶
JP3473477B2 (ja) 1998-04-07 2003-12-02 信越半導体株式会社 シリコン単結晶の製造方法
JP4791073B2 (ja) * 2005-04-26 2011-10-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法
JP5088338B2 (ja) * 2009-03-10 2012-12-05 信越半導体株式会社 シリコン単結晶の引き上げ方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153009A (en) * 1998-03-17 2000-11-28 Shin-Etsu Handotai Co., Ltd. Method for producing a silicon single crystal and the silicon single crystal produced thereby
JP2009274916A (ja) * 2008-05-15 2009-11-26 Sumco Corp シリコン単結晶及びその製造方法
JP2010275137A (ja) * 2009-05-27 2010-12-09 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

Also Published As

Publication number Publication date
KR102105366B1 (ko) 2020-04-28
JP6070626B2 (ja) 2017-02-01
DE112015001883B4 (de) 2022-03-17
JP2015214460A (ja) 2015-12-03
KR20170009853A (ko) 2017-01-25
CN106460227A (zh) 2017-02-22
WO2015173998A1 (ja) 2015-11-19
US20170044685A1 (en) 2017-02-16
US9988736B2 (en) 2018-06-05
DE112015001883T5 (de) 2016-12-29

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