CN106449801A - Open-and-close type three-dimensional trench electrode silicon detector - Google Patents
Open-and-close type three-dimensional trench electrode silicon detector Download PDFInfo
- Publication number
- CN106449801A CN106449801A CN201611133684.8A CN201611133684A CN106449801A CN 106449801 A CN106449801 A CN 106449801A CN 201611133684 A CN201611133684 A CN 201611133684A CN 106449801 A CN106449801 A CN 106449801A
- Authority
- CN
- China
- Prior art keywords
- open
- close type
- silicon
- trench electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000011241 protective layer Substances 0.000 claims abstract 3
- 238000009792 diffusion process Methods 0.000 claims abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- 239000004411 aluminium Substances 0.000 claims description 16
- 238000003475 lamination Methods 0.000 claims description 16
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims 9
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention discloses an open-and-close type three-dimensional trench electrode silicon detector. An open-and-close type groove electrode and a central electrode are formed after etching on the silicon through diffusion and doping, the open-and-close type groove electrode surrounds the central electrode, the central electrode is connected with the negative electrode, the open-and-close type groove electrode is connected with the positive electrode, and the open-and-close type groove electrode is an open and discontinuous cylindrical structure. The bottom of the detector has a silicon dioxide protective layer. The area of the dead zone is smallest, particles can enter from both sides during working, and reaction is more flexible. The problem that in the prior art, the three-dimensional silicon detector can only be single-sided etched, the particles can only be incident on one side, and there is a dead zone, so that the detection performance of the detector is affected.
Description
Technical field
The invention belongs to high-energy physics and astrophysics technical field, it is related to a kind of open-close type three-dimensional trench electrode silicon and detects
Device.
Background technology
Detector is widely used in the technical fields such as high-energy physics, astrophysics, Aero-Space, military affairs, medical science, in high energy
Among physics and astrophysics, detector is under strong radiation parameter, therefore have strict requirements in itself to detector it is desirable to its
There is stronger Radiation hardness, and leakage current and total depletion voltage can not be too big, the size for its volume also has difference
Requirement.Traditional " three-dimensional trench electrode silicon detector " have many weak points, be first when carrying out electrode etch not
Whole silicon body can completely be run through so that detector some can not etch, this part is called " dead band ", " dead band " part
Electric field is weaker, and CHARGE DISTRIBUTION is uneven, and then affects the performance of detector；And " dead band " partly occupies in single detector
20%-30%, if being made as array, can occupy bigger ratio.Secondly, traditional " three-dimensional trench electrode silicon detector "
Can only be to perform etching in one side.Finally, traditional " three-dimensional trench electrode silicon detector " operationally, particle also can only be single
Face is incident.Therefore need a kind of new three-dimensional trench electrode silicon detector of proposition badly.
Content of the invention
In order to achieve the above object, the present invention provides a kind of open-close type three-dimensional trench electrode silicon detector, makes dead zone area
Minimum, during work particle can two-side incidence, reaction more sensitive.Solving in prior art three-dimensional silicon detector can only one side
Etching, particle can only one side incident, and there is larger dead band, the problem of impact detector detection performance.
The technical solution adopted in the present invention is, a kind of open-close type three-dimensional trench electrode silicon detector, runs through on silicon body
After etching through diffusing, doping formed open-close type trench electrode, contre electrode, open-close type trench electrode be surrounded on contre electrode it
Outward, contre electrode connects negative pole, and open-close type trench electrode connects positive pole, and open-close type trench electrode is to there is opening, discontinuous cylinder
Structure；Detector lowermost end is provided with silicon dioxide layer of protection.
The present invention is further characterized in that, further, described contre electrode is hollow cylinder, and radius is 5 μm.
Further, described contre electrode is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and thickness is 1 μ
m；Heavy doping borosilicate layer is located at below aluminium lamination, and thickness is 200 μm～500 μm.
Further, described open-close type trench electrode is the open circles band of column, 10 μm of the width of open-close type trench electrode.
Further, described open-close type trench electrode is made up of aluminium lamination and heavy doping phosphorus silicon layer, and aluminium lamination is located at the superiors, thick
Spend for 1 μm；Heavy doping phosphorus silicon layer is located at below aluminium lamination, and thickness is 200 μm～500 μm.
Further, described silicon body is p-type, and silicon body by silicon dioxide layer and is lightly doped borosilicate layer and constitutes, silicon dioxide layer
Positioned at the superiors, thickness is 1 μm；Borosilicate layer is lightly doped and is located at below silicon dioxide layer, thickness is 200 μm～500 μm.
Further, described silicon dioxide layer of protection thickness is 1 μm.
Further, a length of 3 μm～10 μm of the inside arc of described open-close type trench electrode opening.
The invention has the beneficial effects as follows：In traditional " three-dimensional trench electrode silicon detector ", the n+ type groove at Gui Ti center
P+ type groove with edge is not exclusively that just there is p-type silicon matrix (dead band) bottom of structure, with tradition through total
" three-dimensional trench electrode silicon detector " compare, the electrode of the present invention, completely through silicon body, decreases the ratio in dead band, separately
Outward, based on cylindrical structural, with respect to other structures, there is bigger advantage, at work, Electric Field Distribution, Potential Distributing etc.
More uniform.Due to being cylindrical, the distance between two electrodes are equal, quite similar with plate condenser, the knot drawing
Fruit is more close with theoretical value.By rational size design so that each unit is when being combined into array, each is single
Very close to each other between unit, so that dead zone area is less, the low area of potential-free, and each unit is independent unaffected,
Thus there being more preferable Effect on Detecting.And detector is at work, particle can be simultaneously incident from upper bottom surface, and traditional
" three-dimensional trench electrode silicon detector " can only be that one side is incident, thus particle detection efficiency is higher, reaction is sensitiveer.In technique
Can two-sided etch, traditional three-dimensional groove can only one side etch, and simplifies detector processing technology.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, acceptable
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is conventional three-dimensional trench electrode silicon detector structural representation.
Fig. 2 is the structural representation of the embodiment of the present invention.
Fig. 3 is the structural representation of embodiment of the present invention detector array.
Fig. 4 is the top view of open-close type trench electrode in the embodiment of the present invention.
In figure, 1. contre electrode, 2. trench electrode, 3. silicon body, 4.p type silicon substrate, 5. silicon dioxide layer of protection, 6. folding
Formula trench electrode.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
Conventional three-dimensional trench electrode silicon detector structure, as shown in figure 1, trench electrode 2 is surrounded on outside contre electrode 1,
Have silicon body 3 between trench electrode 2 and contre electrode 1, trench electrode 2 p-type silicon matrix 4 is arranged below, at total bottom
Portion is provided with 1 μm of silicon dioxide layer of protection 5；Contre electrode 1 connects positive pole, and its radius is 5 μm, and the superiors are 1 μm of aluminum, under aluminium lamination
Face is the silicon of 180 μm～450 μm of heavy doping phosphorus.Trench electrode 2 connects negative pole, 10 μm of its width, and the superiors are 1 μm of aluminum,
Aluminium lamination is presented herein below 180 μm～450 μm of heavy doping borosilicate.Gui Ti 3 the superiors are 1 μm of silicon dioxide, rise and separate both positive and negative polarity
Effect, silicon dioxide layer be presented herein below 180 μm～450 μm borosilicate is lightly doped.P-type silicon matrix 4 is that borosilicate is lightly doped, and its thickness is
20 μm～50 μm.
Embodiment 1,
The structure of the present invention, as shown in Figure 2, Figure 4 shows, through diffusing, doping forms open-close type after running through etching on silicon body 3
Trench electrode 6, contre electrode 1, open-close type trench electrode 6 is surrounded on outside contre electrode 1, and open-close type trench electrode 6 is to exist
Opening, discontinuous column structure, the opening inner side arc length S of open-close type trench electrode 6 is 10 μm, sets in total bottommost
There is 1 μm of silicon dioxide layer of protection 5.
Contre electrode 1 is hollow cylinder, and contre electrode 1 connects negative pole, and its radius is 5 μm, and the superiors are 1 μm of aluminum,
Aluminium lamination is presented herein below 200 μm of heavy doping borosilicate, and heavy doping borosilicate is alms giver, provides electronics.Open-close type trench electrode 6 is open circles
The band of column, open-close type trench electrode 6 connects positive pole, and its width is 10 μm, and the superiors are 1 μm of aluminum, and aluminium lamination is presented herein below 200 μm heavily doped
Miscellaneous phosphorus silicon, heavy doping phosphorus silicon is acceptor, accepts electronics.Silicon body 3 is p-type, acts the effect separating both positive and negative polarity, its superiors is 1 μm
Silicon dioxide, silicon dioxide layer be presented herein below 200 μm borosilicate is lightly doped, it is to form PIN junction, making to exhaust that borosilicate is lightly doped
Voltage lower it is not easy to breakdown.
Conventional three-dimensional trench electrode silicon detector, contre electrode 1 connects positive pole, and in the present invention, contre electrode 1 connects negative pole, makes consumption
Voltage to the greatest extent is lower, and Electric Field Distribution is evenly.Open-close type trench electrode 6 (p+ type groove) of the present invention and contre electrode 1 (n+ type ditch
Groove) all run through detector bottom, diffusing, doping can change material electric property it is possible to make atomic quantity, the distribution participating in
Form and depth satisfaction change structural manufacturing process demand, so that the electric property obtaining device reaches most preferably.Open-close type trench electrode 6
The effect of upper setting opening is to allow detector not need substrate, and can two-sided etch in technique, makes the performance of detector
More preferably.In addition open-close type trench electrode 6 is mutually symmetrical two halves so that detector electric fields uniform, the low area of potential-free；Have approximate
The semiconductor substrate of four Pedicellus et Pericarpium Trapae posts does not etch, thus make detector not need substrate, it is to avoid traditional underlying structure setting,
Thus exhausting, voltage is just lower, detector is not easy breakdown when working.
Embodiment 2, the structure of the present invention, the opening inner side arc length S except open-close type trench electrode 6 is 3 μm, heavy doping boron
Silicon, heavy doping phosphorus silicon, the thickness that borosilicate be lightly doped are 500 μm in addition, and remainder is same as Example 1.
Embodiment 3, the structure of the present invention, the opening inner side arc length S except open-close type trench electrode 6 is 8 μm, heavy doping boron
Silicon, heavy doping phosphorus silicon, the thickness that borosilicate be lightly doped are 300 μm in addition, and remainder is same as Example 1.
The structure of array of the present invention, as shown in figure 3, be to be formed by the single detector unit structural grouping of Fig. 2.
In technique, trench electrode is to be etched by litho machine, and ion implanting forms.Traditional " three-dimensional trench electrode silicon
Detector " can only be one side etching, and particle one side injects, and the open-close type of open-close type of the present invention three-dimensional trench electrode silicon detector
Trench electrode 6 is six rhombuses or circular configuration that not exclusively etching is formed in etching groove, is can to go up bottom surface to enter simultaneously
Row etching, forms trench electrode by ion implanting simultaneously, and detector is at work, particle can from upper bottom surface simultaneously
Incidence, and traditional " three-dimensional trench electrode silicon detector " can only be one side incidence.
It should be noted that herein, term " inclusion ", "comprising" or its any other variant are intended to non-row
The comprising of his property, so that including a series of process of key elements, method, article or equipment not only include those key elements, and
And also include other key elements of being not expressly set out, or also include intrinsic for this process, method, article or equipment institute
Key element.In the absence of more restrictions, the key element being limited by sentence "including a ..." is it is not excluded that including institute
Also there is other identical element in process, method, article or the equipment of stating key element.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit protection scope of the present invention.All
Any modification, equivalent substitution and improvement made within the spirit and principles in the present invention etc., are all contained in protection scope of the present invention
Interior.
Claims (8)
1. a kind of open-close type three-dimensional trench electrode silicon detector is it is characterised in that through diffusion after running through etching on silicon body (3)
Doping forms open-close type trench electrode (6), contre electrode (1), and open-close type trench electrode (6) is surrounded on outside contre electrode (1),
Contre electrode (1) connects negative pole, and open-close type trench electrode (6) connects positive pole, and open-close type trench electrode (6) is to there is opening, discontinuous
Column structure, open-close type trench electrode (6) and contre electrode (1) all run through detector bottom；Detector lowermost end is provided with two
Silicon oxide protective layer (5).
2. a kind of open-close type three-dimensional trench electrode silicon detector according to claim 1 is it is characterised in that described central authorities are electric
Pole (1) is hollow cylinder, and radius is 5 μm.
3. a kind of open-close type three-dimensional trench electrode silicon detector according to claim 1 is it is characterised in that described central authorities are electric
Pole (1) is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and thickness is 1 μm；Heavy doping borosilicate layer is located under aluminium lamination
Face, thickness is 200 μm～500 μm.
4. a kind of open-close type three-dimensional trench electrode silicon detector according to claim 1 is it is characterised in that described open-close type
Trench electrode (6) is the open circles band of column, 10 μm of the width of open-close type trench electrode (6).
5. a kind of open-close type three-dimensional trench electrode silicon detector according to claim 1 is it is characterised in that described open-close type
Trench electrode (6) is made up of aluminium lamination and heavy doping phosphorus silicon layer, and aluminium lamination is located at the superiors, and thickness is 1 μm；Heavy doping phosphorus silicon layer is located at
Below aluminium lamination, thickness is 200 μm～500 μm.
6. a kind of open-close type three-dimensional trench electrode silicon detector according to claim 1 is it is characterised in that described silicon body
(3) it is p-type, silicon body (3) by silicon dioxide layer and is lightly doped borosilicate layer and constitutes, and silicon dioxide layer is located at the superiors, thickness is 1 μ
m；Borosilicate layer is lightly doped and is located at below silicon dioxide layer, thickness is 200 μm～500 μm.
7. a kind of open-close type three-dimensional trench electrode silicon detector according to claim 1 is it is characterised in that described titanium dioxide
Silicon protective layer (5) thickness is 1 μm.
8. a kind of open-close type three-dimensional trench electrode silicon detector according to claim 1 is it is characterised in that described open-close type
A length of 3 μm～10 μm of the inside arc of trench electrode (6) opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611133684.8A CN106449801B (en) | 2016-12-10 | 2016-12-10 | A kind of open-close type three-dimensional trench electrode silicon detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611133684.8A CN106449801B (en) | 2016-12-10 | 2016-12-10 | A kind of open-close type three-dimensional trench electrode silicon detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106449801A true CN106449801A (en) | 2017-02-22 |
| CN106449801B CN106449801B (en) | 2018-01-16 |
Family
ID=58216404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611133684.8A Active CN106449801B (en) | 2016-12-10 | 2016-12-10 | A kind of open-close type three-dimensional trench electrode silicon detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106449801B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107221569A (en) * | 2017-07-21 | 2017-09-29 | 湘潭大学 | A kind of novel hexagonal drives entire formula core-shell electrode semiconductor detector |
| CN107221570A (en) * | 2017-07-21 | 2017-09-29 | 湘潭大学 | A kind of Novel square drives entire formula core-shell electrode semiconductor detector |
| CN107256905A (en) * | 2017-07-21 | 2017-10-17 | 湘潭大学 | A kind of triangle drives entire formula cell type electrode-semiconductor detector |
| CN107256897A (en) * | 2017-07-21 | 2017-10-17 | 湘潭大学 | A kind of circle drives entire formula cell type electrode-semiconductor detector |
| CN107342335A (en) * | 2017-08-09 | 2017-11-10 | 湘潭大学 | Long honeycomb core-shell electrode three dimension detector |
| CN108321218A (en) * | 2018-03-20 | 2018-07-24 | 湘潭大学 | A kind of three-dimensional parallel-plate electrode semiconductor detector |
| CN108417647A (en) * | 2018-02-23 | 2018-08-17 | 湘潭大学 | The Flouride-resistani acid phesphatase three dimension detector of super fast response |
| CN108428750A (en) * | 2018-04-04 | 2018-08-21 | 湘潭大学 | A kind of square opens entire formula cell type electrode-semiconductor detector |
| CN108511554A (en) * | 2018-04-04 | 2018-09-07 | 湘潭大学 | A kind of preparation method of rectangular combined type core-shell electrode semiconductor detector |
| CN109935643A (en) * | 2019-04-01 | 2019-06-25 | 湘潭大学 | Two-sided wrong embedded three dimension detector of two-dimensional arrangements and preparation method thereof, array |
| CN109994454A (en) * | 2019-04-01 | 2019-07-09 | 李正 | Box-like three dimension detector of hexagon and preparation method thereof |
| CN109994453A (en) * | 2019-04-01 | 2019-07-09 | 湘潭大学 | Embedding trapezoidal box-like three dimension detector |
| CN113224196A (en) * | 2021-04-30 | 2021-08-06 | 中国科学院微电子研究所 | Avalanche detector |
| CN114784122A (en) * | 2022-03-07 | 2022-07-22 | 中国科学院微电子研究所 | Three-dimensional groove electrode detector with double-sided floating rings and preparation method thereof |
| CN114899248A (en) * | 2022-03-07 | 2022-08-12 | 中国科学院微电子研究所 | Three-dimensional groove electrode detector penetrated by central electrode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102695967A (en) * | 2009-10-19 | 2012-09-26 | 布鲁克哈文科学协会有限责任公司 | 3D-trench electrode detectors |
| CN104157659A (en) * | 2014-07-23 | 2014-11-19 | 哈尔滨工程大学 | Radiation detector crosstalk segregating radiating reinforcing pixel structure and manufacturing method thereof |
| CN205643730U (en) * | 2016-04-29 | 2016-10-12 | 湘潭大学 | Open entire formula box type electrode semiconductor detector |
| CN205666239U (en) * | 2016-04-26 | 2016-10-26 | 湘潭大学 | Novel closed type shell mould electrode silicon detector |
-
2016
- 2016-12-10 CN CN201611133684.8A patent/CN106449801B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102695967A (en) * | 2009-10-19 | 2012-09-26 | 布鲁克哈文科学协会有限责任公司 | 3D-trench electrode detectors |
| CN104157659A (en) * | 2014-07-23 | 2014-11-19 | 哈尔滨工程大学 | Radiation detector crosstalk segregating radiating reinforcing pixel structure and manufacturing method thereof |
| CN205666239U (en) * | 2016-04-26 | 2016-10-26 | 湘潭大学 | Novel closed type shell mould electrode silicon detector |
| CN205643730U (en) * | 2016-04-29 | 2016-10-12 | 湘潭大学 | Open entire formula box type electrode semiconductor detector |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107221570A (en) * | 2017-07-21 | 2017-09-29 | 湘潭大学 | A kind of Novel square drives entire formula core-shell electrode semiconductor detector |
| CN107256905A (en) * | 2017-07-21 | 2017-10-17 | 湘潭大学 | A kind of triangle drives entire formula cell type electrode-semiconductor detector |
| CN107256897A (en) * | 2017-07-21 | 2017-10-17 | 湘潭大学 | A kind of circle drives entire formula cell type electrode-semiconductor detector |
| CN107221569A (en) * | 2017-07-21 | 2017-09-29 | 湘潭大学 | A kind of novel hexagonal drives entire formula core-shell electrode semiconductor detector |
| CN107342335A (en) * | 2017-08-09 | 2017-11-10 | 湘潭大学 | Long honeycomb core-shell electrode three dimension detector |
| CN107342335B (en) * | 2017-08-09 | 2018-11-02 | 湘潭大学 | Long honeycomb core-shell electrode three dimension detector |
| CN108417647A (en) * | 2018-02-23 | 2018-08-17 | 湘潭大学 | The Flouride-resistani acid phesphatase three dimension detector of super fast response |
| CN108321218A (en) * | 2018-03-20 | 2018-07-24 | 湘潭大学 | A kind of three-dimensional parallel-plate electrode semiconductor detector |
| CN108428750B (en) * | 2018-04-04 | 2021-02-02 | 湘潭大学 | Square opening and closing type box-shaped electrode semiconductor detector |
| CN108428750A (en) * | 2018-04-04 | 2018-08-21 | 湘潭大学 | A kind of square opens entire formula cell type electrode-semiconductor detector |
| CN108511554A (en) * | 2018-04-04 | 2018-09-07 | 湘潭大学 | A kind of preparation method of rectangular combined type core-shell electrode semiconductor detector |
| CN109935643A (en) * | 2019-04-01 | 2019-06-25 | 湘潭大学 | Two-sided wrong embedded three dimension detector of two-dimensional arrangements and preparation method thereof, array |
| CN109994453A (en) * | 2019-04-01 | 2019-07-09 | 湘潭大学 | Embedding trapezoidal box-like three dimension detector |
| CN109994454A (en) * | 2019-04-01 | 2019-07-09 | 李正 | Box-like three dimension detector of hexagon and preparation method thereof |
| CN109994454B (en) * | 2019-04-01 | 2023-10-24 | 李正 | Hexagonal box-shaped three-dimensional detector and preparation method thereof |
| CN109935643B (en) * | 2019-04-01 | 2024-03-22 | 湘潭大学 | Two-dimensional arrangement double-sided misplaced three-dimensional detector, preparation method thereof and array |
| CN113224196A (en) * | 2021-04-30 | 2021-08-06 | 中国科学院微电子研究所 | Avalanche detector |
| CN114784122A (en) * | 2022-03-07 | 2022-07-22 | 中国科学院微电子研究所 | Three-dimensional groove electrode detector with double-sided floating rings and preparation method thereof |
| CN114899248A (en) * | 2022-03-07 | 2022-08-12 | 中国科学院微电子研究所 | Three-dimensional groove electrode detector penetrated by central electrode and preparation method thereof |
| CN114899248B (en) * | 2022-03-07 | 2024-04-16 | 中国科学院微电子研究所 | Three-dimensional trench electrode detector with central electrode penetrating through and preparation method thereof |
| CN114784122B (en) * | 2022-03-07 | 2024-04-16 | 中国科学院微电子研究所 | Three-dimensional groove electrode detector with double-sided floating rings and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106449801B (en) | 2018-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106449801A (en) | Open-and-close type three-dimensional trench electrode silicon detector | |
| CN205542844U (en) | Closed type shell mould electrode silicon detector | |
| CN110416335A (en) | Silicon substrate near-infrared single photon avalanche diode detector and preparation method thereof | |
| CN104810377B (en) | A kind of single photon avalanche diode detector array element of high integration | |
| CN106449802B (en) | The three-dimensional trench electrode silicon detector of variable center passive electrode | |
| CN205666239U (en) | Novel closed type shell mould electrode silicon detector | |
| CN107256897A (en) | A kind of circle drives entire formula cell type electrode-semiconductor detector | |
| CN111354747A (en) | Silicon drift detector based on divider resistor and floating electrode and design method thereof | |
| CN107221569A (en) | A kind of novel hexagonal drives entire formula core-shell electrode semiconductor detector | |
| CN107221570A (en) | A kind of Novel square drives entire formula core-shell electrode semiconductor detector | |
| CN108428750A (en) | A kind of square opens entire formula cell type electrode-semiconductor detector | |
| CN206271714U (en) | A kind of open-close type three-dimensional trench electrode silicon detector | |
| CN112071945A (en) | Spiral ring electrode silicon array detector | |
| CN208835074U (en) | A kind of three-dimensional parallel-plate electrode semiconductor detector and detection device | |
| CN110350044B (en) | Square spiral silicon drift detector and preparation method thereof | |
| CN110611009B (en) | Nested three-dimensional groove electrode silicon detector | |
| CN207164265U (en) | Mutual embedding core-shell electrode three dimension detector | |
| CN209016068U (en) | Based on a kind of silicon drifting detector (SDD) for controlling surface field | |
| CN206878010U (en) | A kind of circle drives entire formula cell type electrode-semiconductor detector | |
| CN216563149U (en) | Three-dimensional epitaxial injection hexagonal electrode silicon detector | |
| CN107256905A (en) | A kind of triangle drives entire formula cell type electrode-semiconductor detector | |
| CN208077991U (en) | A kind of rectangular combined type core-shell electrode semiconductor detector | |
| CN110164990B (en) | Draw oblique column three-dimensional detector | |
| CN207134369U (en) | A kind of triangle drives entire formula cell type electrode-semiconductor detector | |
| CN207474475U (en) | The closed type three-dimensional groove silicon detector in minimum dead zone |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |