CN107221570A - A kind of Novel square drives entire formula core-shell electrode semiconductor detector - Google Patents
A kind of Novel square drives entire formula core-shell electrode semiconductor detector Download PDFInfo
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- CN107221570A CN107221570A CN201710598444.3A CN201710598444A CN107221570A CN 107221570 A CN107221570 A CN 107221570A CN 201710598444 A CN201710598444 A CN 201710598444A CN 107221570 A CN107221570 A CN 107221570A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 239000011258 core-shell material Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 11
- 230000000295 complement effect Effects 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 14
- 229910017115 AlSb Inorganic materials 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- YFDLHELOZYVNJE-UHFFFAOYSA-L mercury diiodide Chemical compound I[Hg]I YFDLHELOZYVNJE-UHFFFAOYSA-L 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 7
- 238000005457 optimization Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
Abstract
A kind of Novel square drives entire formula core-shell electrode semiconductor detector, there is a cube rod semiconductor substrate, and central cylindrical electrode is hit exactly positioned at trench electrode, and trench electrode is rectangle frame hollow electrode, and trench electrode is etched into that structure is identical and two valves complementary each other in structure；There is twill-like entity gap a pair of parallel side center of trench electrode, the Novel square is opened in the trench electrode and central cylindrical electrode of entire formula core-shell electrode semiconductor detector top surface covered with contact electrode layer, other semiconductor substrate surfaces covering silicon dioxide insulating layer of top surface uncovered electrode contact layer, bottom surface is provided with silicon dioxide liner bottom；Electrode is not etched between trench electrode so as to remaining twill-like entity gap, Novel square drives entire formula core-shell electrode semiconductor detector on the basis of twill-like semiconductor substrate using trench electrode summit as the center of circle, the width in twill-like entity gap is that radius does circle, semiconductor substrate outside circular arc is etched into electrode, twill body semiconductor substrate is left, detector performance is lifted.
Description
Technical field
The present invention relates to high-energy physics is belonged to, astrophysics, Aero-Space are military, the technical field such as medical science, more particularly to
A kind of Novel square drives entire formula core-shell electrode semiconductor detector.
Background technology
Detector is mainly used in high-energy physics, astrophysics etc., silicon detector detectivity height, fast response time, tool
There is very strong Radiation hardness, and be easily integrated, have significant application value in the field such as high energy particle detection and X-ray check.
But traditional " three-dimensional silicon detector " has many deficiencies, in high-energy physics and astrophysics, detector is under strong radiation parameter
Work, this has high requirement to detector energy resolution ratio response speed etc., and need to have stronger Radiation hardness, Low dark curient
Stream and low total depletion voltage, have different requirements for the size of its volume.
Silicon detector be work under reverse bias, when external particles enter the sensitive volume of detector, reverse
Under bias effect, the electron-hole pair of generation is separated, and electronics is collected after positive pole is reached to positive polar motion, and hole is to negative
Polar motion, is collected by negative pole, and the electric signal of reflection particle information can be just formed in external circuit.
Existing " three-dimensional trench electrode silicon detector " can not completely run through whole silicon body when carrying out electrode etch, this
Allowing for detector, some can not be etched, and this part is big to the performance impact of detector, such as the partial electric-field is weaker,
Distribution of charges is uneven, the phenomenon such as detection efficient reduction.Our this part is called " dead band ", and " dead band " is in single detection
20%-30% is occupied in device, if being made as array, bigger ratio can be occupied.Secondly, " three-dimensional trench electrode silicon detection
Device " can only be performed etching in one side.Finally, operationally, particle can only one side incidence, influence detection effect for this detector
Rate.
Therefore, providing a kind of Novel square drives entire formula core-shell electrode semiconductor detector, solve above-mentioned prior art and exist
The problem of just seem particularly necessary.
The content of the invention
To solve the problem of above-mentioned prior art is present, entire formula shell is opened it is an object of the invention to provide a kind of Novel square
Type electrode-semiconductor detector, optimizes structure type, deadband eliminating, and optimization one side etching technics is two-sided etching technics, work
When, particle can two-side incidence, react it is sensitiveer, detection efficient is higher.
To reach above-mentioned purpose, the technical scheme is that：
A kind of Novel square drives entire formula core-shell electrode semiconductor detector, there is a cube rod semiconductor substrate (1), groove electricity
Pole (2) and central cylindrical electrode (3) by semiconductor substrate (1) by being formed through etching, ion diffusing, doping, central cylindrical
Electrode (3) is hit exactly positioned at trench electrode (2), and trench electrode (2) is surrounded on outside central cylindrical electrode (3), wherein, trench electrode
(2) it is rectangle frame hollow electrode, trench electrode (2) is etched into that structure is identical and two valves complementary each other in structure；Trench electrode
(2) there is twill-like entity gap (6) a pair of parallel side center, and semiconductor substrate (1) uses lightly-doped silicon, trench electrode (2)
And central cylindrical electrode (3) uses heavily doped silicon, wherein, the P/N types of trench electrode (2) and central cylindrical electrode (3) are on the contrary, institute
State Novel square and open covering in the trench electrode (2) and central cylindrical electrode (3) of entire formula core-shell electrode semiconductor detector top surface
There is contact electrode layer (4), other semiconductor substrate (1) surfaces covering silica of top surface uncovered electrode contact layer (4) is exhausted
Edge layer (7), bottom surface is provided with silicon dioxide liner bottom (5)；Electrode is not etched between trench electrode (2) so as to remaining oblique
Line shape entity gap (6), Novel square drives entire formula core-shell electrode semiconductor detector on the basis of twill-like semiconductor substrate
Using trench electrode summit as the center of circle, the width in twill-like entity gap (6) is all carved for the semiconductor substrate that radius is done outside circle, circular arc
Electrode is lost into, so as to leave the twill body semiconductor substrate with arcuation.
Further, the Novel square drives entire formula core-shell electrode semiconductor detector by sharing trench electrode (2)
Electrode wall formation M*N detector arrays, wherein M, N is positive integer, and detector is a PIN junction：P-type semiconductor-insulating barrier-
N-type semiconductor shape, wherein, the resistivity of the P/N type semiconductor silicons of heavy doping is different from the P/N semiconductor silicons being lightly doped, half
Performed etching on conductor matrix, form trench electrode (2) and central cylindrical electrode (3), then trench electrode (2) uses N-type silicon
Heavy doping, central cylindrical electrode (3) uses P type silicon heavy doping, and semiconductor substrate (1) is lightly doped using p-type.Further, institute
State the semi-conducting material of semiconductor substrate (1) using Si, Ge, HgI2, GaAs, TiBr, CdTe, CdZnTe, CdSe, GaP,
One or more combinations in HgS, PbI2 and AlSb.
Further, it is highly 100 to 300 microns that the Novel square, which drives entire formula core-shell electrode semiconductor detector,.
Further, central cylindrical electrode (3) width is 10 microns.
Further, the contact electrode layer (4) is aluminium electrode contact layer.
Further, contact electrode layer (4) thickness is 1 micron, and silicon dioxide liner bottom (5) thickness is 1 micro-
Rice.
Further, the width of the twill-like entity gap (6) is less than 10 microns.
Relative to prior art, beneficial effects of the present invention are：
A kind of Novel square of the present invention drives entire formula core-shell electrode semiconductor detector, and patent optimization structure type eliminates dead
Area, optimization one side etching technics is two-sided etching technics, during work, particle can two-side incidence, react sensitiveer, detection efficient is more
It is high.
Brief description of the drawings
Fig. 1 is the three dimensional structure diagram that Novel square of the present invention drives entire formula core-shell electrode semiconductor detector.
Fig. 2 is the top schematic diagram that Novel square of the present invention drives entire formula core-shell electrode semiconductor detector.
Fig. 3 is that Novel square of the present invention opens the entire formula core-shell electrode semiconductor detector band semiconductor-based bodily form of arcuation twill-like
Into procedure chart.
Fig. 4 is that Novel square of the present invention opens entire formula core-shell electrode semiconductor detector 2x2 array plane figures.
Fig. 5 is side view of the invention.
Fig. 6 is present invention design and the dead zone area comparison diagram with circular design.
Wherein, semiconductor substrate -1, trench electrode -2, central cylindrical electrode -3, contact electrode layer -4, silicon dioxide substrates
Layer -5, twill-like entity gap -6, silicon dioxide insulating layer -7.
Embodiment
Technical solution of the present invention is described in further detail with reference to the accompanying drawings and detailed description：
As shown in figures 1 to 6, a kind of Novel square drives entire formula core-shell electrode semiconductor detector, has a cube rod semiconductor-based
Body 1, trench electrode 2 and central cylindrical electrode 3 by semiconductor substrate 1 by through etching, ion diffusing, doping formed, center
Columnar electrode 3 is hit exactly positioned at trench electrode 2, and trench electrode 2 is surrounded on outside central cylindrical electrode 3, wherein, trench electrode 2
For rectangle frame hollow electrode, trench electrode 2 is etched into that structure is identical and two valves complementary each other in structure；The one of trench electrode 2
There is twill-like entity gap 6 to parallel edges center, semiconductor substrate 1 uses lightly-doped silicon, trench electrode 2 and central cylindrical electrode
3 use heavily doped silicon, wherein, the P/N types of trench electrode 2 and central cylindrical electrode 3 are on the contrary, the Novel square opens entire formula shell mould
Covered with contact electrode layer 4 in the trench electrode 2 and central cylindrical electrode 3 of electrode-semiconductor detector top surface, top surface is not covered
Other surfaces of semiconductor substrate 1 covering silicon dioxide insulating layer 7 of contact electrode layer 4, bottom surface is provided with silicon dioxide liner bottom
5；Electrode is not etched between trench electrode 2 so as to remaining twill-like entity gap 6, Novel square opens entire formula core-shell electrode
Semiconductor detector on the basis of twill-like semiconductor substrate using trench electrode summit as the center of circle, twill-like entity gap 6
Width is that the semiconductor substrate that radius is done outside circle, circular arc is all etched into electrode, so that it is semiconductor-based to leave the twill body with arcuation
Body.
Further, the Novel square opens electricity of the entire formula core-shell electrode semiconductor detector by shared trench electrode 2
Pole wall formation M*N detector arrays, wherein M, N is positive integer, and detector is a PIN junction：P-type semiconductor-insulating barrier-N
Type semiconductor shape, wherein, the resistivity of the P/N type semiconductor silicons of heavy doping is different from the P/N semiconductor silicons being lightly doped, and is partly leading
Performed etching on body matrix, form trench electrode 2 and central cylindrical electrode 3, then trench electrode 2 uses N-type silicon heavy doping, in
Columnar electrode (3) is entreated to use P-type silicon heavy doping, semiconductor substrate 1 is lightly doped using p-type.
Further, the semi-conducting material of the semiconductor substrate 1 using Si, Ge, HgI2, GaAs, TiBr, CdTe,
One or more combinations in CdZnTe, CdSe, GaP, HgS, PbI2 and AlSb.
Further, it is highly 100 to 300 microns that the Novel square, which drives entire formula core-shell electrode semiconductor detector,.
Further, the width of central cylindrical electrode 3 is 10 microns.
Further, the contact electrode layer 4 is aluminium electrode contact layer.
Further, the thickness of contact electrode layer 4 is 1 micron, and the thickness of silicon dioxide liner bottom 5 is 1 micron.
Further, the width in the twill-like entity gap 6 is less than 10 microns.
Fig. 2 is the sectional view of the structure.It is the forming process of remaining semiconductor substrate between electrode shown in Fig. 3.Fig. 4 is new
It is square to open entire formula core-shell electrode semiconductor detector 2x2 array plane figures.The new detector is partly led except being adapted to general silicon
Outside body material, it is possible to use various other semi-conducting material manufacturings.Such as：From Ge, HgI2, GaAs, TiBr, CdTe, CdZnTe,
CdSe, GaP, HgS, PbI2 and AlSb etc..
Compared to existing " three-dimensional trench electrode detector ", this electrode of the invention can be set through the structure of etching
Meter, can not only make it that the potential and Electric Field Distribution of detector cells are more uniform, and can eliminate low electricity from structure optimization
Field areas, improves the detection efficient and charge collection efficiency 20% to 30% of detector cells., can when being applied to detector array
Raising detection efficient by a larger margin.Meanwhile, because the electrode of the new structure can be by obtaining through etching technics so that visit
Survey device and be changed into two-sided sensitive from one side is sensitive, particle can react sensitiveer, detection efficient is higher with two-side incidence.
In high-energy physics or astrophysical application, for detection of grenz ray etc., the spy of large area is generally required
Survey device array.Entire formula cell type electrode probe is opened compared to what other shapes were designed, its upright shape is more beneficial for minimum dead
The formation of the detector array in area.As shown in fig. 6, grey parts are detector sensitive area, white portion is to be formed after array
Remaining inert zone domain, i.e. " dead band " on wafer.The detector array dead zone area of squared design is minimum, and the side of being arranged in
Positive array, space arrangement utilization rate is best.
In actual use, each detector cells are regard as a PIN junction：P-type semiconductor-insulating barrier-N-type semiconductor
Shape, wherein, the resistivity of the P/N type semiconductor silicons of heavy doping is different from the P/N semiconductor silicons being lightly doped, on semiconductor substrate
Perform etching, hollow groove and hollow center post, then carry out heavy doping to form anodic-cathodic.In order to obtain optimal detection
Device performance, it is that PN junction is used in the P-type semiconductor silicon being lightly doped, structure design at peripheral groove to take semiconductor substrate.Groove
Electrode is N-type silicon heavy doping, and contre electrode is P-type silicon heavy doping, and material for detector is the silicon that p-type is lightly doped.Contre electrode is
Negative pole, exterior channels are positive poles.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
The change or replacement expected without creative work, should all be included within the scope of the present invention.Therefore, it is of the invention
Protection domain should be determined by the scope of protection defined in the claims.
Claims (8)
1. a kind of Novel square drives entire formula core-shell electrode semiconductor detector, it is characterised in that have a cube rod semiconductor substrate
(1), trench electrode (2) and central cylindrical electrode (3) by semiconductor substrate (1) by being formed through etching, ion diffusing, doping,
Central cylindrical electrode (3) is hit exactly positioned at trench electrode (2), and trench electrode (2) is surrounded on outside central cylindrical electrode (3), wherein,
Trench electrode (2) is rectangle frame hollow electrode, and trench electrode (2) is etched into that structure is identical and two valves complementary each other in structure；
There is twill-like entity gap (6) a pair of parallel side center of trench electrode (2), and semiconductor substrate (1) uses lightly-doped silicon, groove
Electrode (2) and central cylindrical electrode (3) use heavily doped silicon, wherein, trench electrode (2) and the P/N types of central cylindrical electrode (3)
On the contrary, the Novel square opens the trench electrode (2) and central cylindrical electrode (3) of entire formula core-shell electrode semiconductor detector top surface
On covered with contact electrode layer (4), other semiconductor substrate (1) surfaces covering dioxy of top surface uncovered electrode contact layer (4)
SiClx insulating barrier (7), bottom surface is provided with silicon dioxide liner bottom (5)；Electrode is not etched between trench electrode (2) so as to surplus
Lower twill-like entity gap (6), Novel square opens base of the entire formula core-shell electrode semiconductor detector in twill-like semiconductor substrate
Using trench electrode summit as the center of circle on plinth, the width in twill-like entity gap (6) does the semiconductor substrate outside circle, circular arc for radius
Electrode is all etched into, so as to leave the twill body semiconductor substrate with arcuation.
2. a kind of Novel square according to claim 1 drives entire formula core-shell electrode semiconductor detector, it is characterised in that institute
State Novel square and open electrode wall formation M*N array spy of the entire formula core-shell electrode semiconductor detector by shared trench electrode (2)
Device is surveyed, wherein M, N is positive integer, and detector is a PIN junction：P-type semiconductor-insulating barrier-N-type semiconductor shape, wherein, weight
The resistivity of the P/N type semiconductor silicons of doping is different from the P/N semiconductor silicons being lightly doped, and is performed etching on semiconductor substrate,
Trench electrode (2) and central cylindrical electrode (3) are formed, then trench electrode (2) uses N-type silicon heavy doping, central cylindrical electrode
(3) P-type silicon heavy doping is used, semiconductor substrate (1) is lightly doped using p-type.
3. a kind of Novel square according to claim 1 drives entire formula core-shell electrode semiconductor detector, it is characterised in that institute
The semi-conducting material for stating semiconductor substrate (1) uses Si, Ge, HgI2、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、
PbI2With one or more combinations in AlSb.
4. a kind of Novel square according to claim 1 drives entire formula core-shell electrode semiconductor detector, it is characterised in that institute
It is highly 100-300 microns to state Novel square and drive entire formula core-shell electrode semiconductor detector.
5. a kind of Novel square according to claim 1 drives entire formula core-shell electrode semiconductor detector, it is characterised in that institute
Central cylindrical electrode (3) width is stated for 10 microns.
6. a kind of Novel square according to claim 1 drives entire formula core-shell electrode semiconductor detector, it is characterised in that institute
Contact electrode layer (4) is stated for aluminium electrode contact layer.
7. a kind of Novel square according to claim 1 drives entire formula core-shell electrode semiconductor detector, it is characterised in that institute
It is 1 micron to state contact electrode layer (4) thickness, and silicon dioxide liner bottom (5) thickness is 1 micron.
8. a kind of Novel square according to claim 1 drives entire formula core-shell electrode semiconductor detector, it is characterised in that institute
The width for stating twill-like entity gap (6) is less than 10 microns.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428750A (en) * | 2018-04-04 | 2018-08-21 | 湘潭大学 | A kind of square opens entire formula cell type electrode-semiconductor detector |
| CN108511554A (en) * | 2018-04-04 | 2018-09-07 | 湘潭大学 | A kind of preparation method of rectangular combined type core-shell electrode semiconductor detector |
| CN109935643A (en) * | 2019-04-01 | 2019-06-25 | 湘潭大学 | Two-sided wrong embedded three dimension detector of two-dimensional arrangements and preparation method thereof, array |
| CN110010590A (en) * | 2019-04-01 | 2019-07-12 | 湖南正芯微电子探测器有限公司 | Rectangular box-like three dimension detector and preparation method thereof |
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| CN205542844U (en) * | 2016-04-26 | 2016-08-31 | 湘潭大学 | Closed type shell mould electrode silicon detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428750A (en) * | 2018-04-04 | 2018-08-21 | 湘潭大学 | A kind of square opens entire formula cell type electrode-semiconductor detector |
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| CN108428750B (en) * | 2018-04-04 | 2021-02-02 | 湘潭大学 | Square opening and closing type box-shaped electrode semiconductor detector |
| CN109935643A (en) * | 2019-04-01 | 2019-06-25 | 湘潭大学 | Two-sided wrong embedded three dimension detector of two-dimensional arrangements and preparation method thereof, array |
| CN110010590A (en) * | 2019-04-01 | 2019-07-12 | 湖南正芯微电子探测器有限公司 | Rectangular box-like three dimension detector and preparation method thereof |
| CN110010590B (en) * | 2019-04-01 | 2024-02-02 | 湖南脉探芯半导体科技有限公司 | Square box-shaped three-dimensional detector and preparation method thereof |
| CN109935643B (en) * | 2019-04-01 | 2024-03-22 | 湘潭大学 | Two-dimensional arrangement double-sided misplaced three-dimensional detector, preparation method thereof and array |
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Application publication date: 20170929 |