CN108428750B - Square opening and closing type box-shaped electrode semiconductor detector - Google Patents
Square opening and closing type box-shaped electrode semiconductor detector Download PDFInfo
- Publication number
- CN108428750B CN108428750B CN201810299187.8A CN201810299187A CN108428750B CN 108428750 B CN108428750 B CN 108428750B CN 201810299187 A CN201810299187 A CN 201810299187A CN 108428750 B CN108428750 B CN 108428750B
- Authority
- CN
- China
- Prior art keywords
- electrode
- silicon
- detector
- wafer
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 32
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 230000000295 complement effect Effects 0.000 claims description 5
- 229910017115 AlSb Inorganic materials 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- YFDLHELOZYVNJE-UHFFFAOYSA-L mercury diiodide Chemical compound I[Hg]I YFDLHELOZYVNJE-UHFFFAOYSA-L 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 51
- 238000010329 laser etching Methods 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 229920005591 polysilicon Polymers 0.000 abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 238000007747 plating Methods 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 abstract description 3
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000001514 detection method Methods 0.000 description 10
- 230000005684 electric field Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A square open-close type box-type electrode semiconductor detector is characterized in that three-dimensional grooves are formed in the front of a semiconductor wafer in a laser etching mode, silicon wafer gaps are reserved among the grooves, and an oxidation protection layer F with a certain thickness is grown on the front of a wafer D in a laser etching mode, wherein the thickness of the front of the wafer D is DtopThe grooves A are provided with diagonal silicon bodies B with certain width; the twill-shaped silicon body B is a small part of silicon body left after the wafer D is etched; the central columnar electrode C is obtained by performing diffusion doping after the silicon body is etched in a penetrating way by laser; secondly, no silicon wafer gap exists between the three-dimensional groove grooves etched by the laser on the reverse side of the silicon wafer: thirdly, flattening the periphery of the groove wall by using a polishing technology: fourthly, boron diffusion doping is carried out along the groove wall, and the three-dimensional groove is filled: sixthly, front laser deep etching of the central columnar electrode: seventhly, filling the central columnar electrode C with polysilicon or metal; and eighthly, plating a metal layer on all the electrodes.
Description
Technical Field
The invention belongs to the technical fields of high-energy physics, celestial physics, aerospace, military, medicine and the like, and particularly relates to a square open-close type box-type electrode semiconductor detector.
Background
The detector is mainly used for high-energy physics, celestial body physics and the like, and the silicon detector has high detection sensitivity, high response speed, strong irradiation resistance, easy integration and important application value in the fields of high-energy particle detection, X-ray detection and the like. However, the conventional three-dimensional silicon detector has many defects, and in high-energy physics and celestial body physics, the detector works under a strong irradiation condition, so that the detector has high requirements on the response speed of energy resolution and the like, and has different requirements on the size of the volume of the detector, such as strong irradiation resistance, low leakage current and low full depletion voltage.
The silicon detector works under reverse bias, when external particles enter a sensitive area of the detector, generated electron-hole pairs are separated under the action of the reverse bias, electrons move to the positive electrode and are collected after reaching the positive electrode, and holes move to the negative electrode and are collected by the negative electrode, so that an electric signal reflecting particle information can be formed in an external circuit.
The existing three-dimensional groove electrode silicon detector cannot completely penetrate through the whole silicon body when electrode etching is carried out, so that a part of the detector cannot be etched, and the influence of the part on the performance of the detector is large, such as the phenomena of weak electric field, uneven charge distribution, low detection efficiency and the like of the part. We refer to this portion as "dead space" and this "dead space" can occupy 20% -30% of a single detector, and a greater proportion if arrayed. Secondly, the three-dimensional groove electrode silicon detector can only be etched on a single surface. Finally, when the detector works, particles can only be incident on a single surface, and the detection efficiency is influenced.
Therefore, a square open-close type box-type electrode semiconductor detector is provided to solve the problems of the prior art.
Disclosure of Invention
The invention discloses a square opening and closing type box-shaped electrode semiconductor detector, wherein a twill-shaped semiconductor substrate is reserved when the volume of the detector prepared by the invention is less than ten percent when a groove electrode is etched, and detector units are directly connected with each other when the process is realized. The rest parts are all through groove electrodes, and the detection efficiency of the detector is further improved.
The design of the invention is improved to be less than ten percent of the volume of the semiconductor substrate with the twill shape, the part of the semiconductor substrate can be used as the process realization condition for connecting two detector units, and compared with the prior patent 'an open-close type box-type electrode semiconductor detector', the dead zone area of the patent is reduced by 90 percent on the basis of the prior patent.
Based on the existing patent of 'an open-close type box-type electrode semiconductor detector' (patent number: 201620384599.8), the structure of the detector is further optimized, the thickness of the twill-shaped semiconductor is thinned, the detection efficiency of the detector is improved, and the process implementation method of the square open-close type box-type electrode silicon detector is elaborated. Besides being suitable for common silicon semiconductor materials, the detector can also be made of various other semiconductor materials. Such as: from Ge, HgI2、GaAs、TiBr、CdTe、CdZnTe、CdSe、 GaP、HgS、PbI2And AlSb and the like. The process implementation method adopts a laser etching three-dimensional groove technology.
In order to achieve the purpose, the scheme of the invention is as follows:
a square open-close type box-shaped electrode semiconductor detector comprises a front groove electrode (2), a back groove electrode (5) and a central column electrode (3), wherein the front groove electrode (2), the back groove electrode (5) and the central column electrode (3) are formed by a semiconductor substrate (1) through etching and diffusion doping methods, the front groove electrode (2) and the back groove electrode (5) surround the central column electrode (3), and the front groove electrode (2) and the back groove electrode (5) are rectangular hollow electrodes; the front groove electrode (2) is etched into two halves which have the same structure and are mutually complementary in structure, a twill-shaped semiconductor substrate (4) is formed at the part, which is not etched, between the front groove electrode (2), and the width of the twill-shaped semiconductor substrate (4) is less than 10 mu m; electrode contact layers cover the front groove electrode (2) and the central columnar electrode (3), silicon dioxide insulating layers cover the surfaces of other semiconductor substrates (1) of which the front surfaces are not covered with the electrode contact layers, and a silicon dioxide substrate layer is arranged on the bottom surface.
Furthermore, the thickness of the front groove electrode (2) is less than one tenth of the whole height of the detector.
Furthermore, the square open-close type box-shaped electrode semiconductor detector can form an M x N array of detector arrays through the electrode walls of the shared front groove electrodes (2).
Furthermore, the semiconductor substrate (1) is made of silicon, silicon oxide, Ge and HgI2、 GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI2Or a combination of one or more of AlSb.
The method for manufacturing the square open-close type box-type electrode semiconductor detector comprises the following steps:
step one, laser etching three-dimensional grooves on the front side of a semiconductor wafer, leaving silicon wafer gaps between the grooves, and performing laser etching on the front side of a wafer D with an oxide protective layer F growing to a certain thickness to obtain a thickness DtopThe grooves A are provided with diagonal silicon bodies B with certain width; the twill-shaped silicon body B is a small part of silicon body left after the wafer D is etched; the central columnar electrode C is obtained by performing diffusion doping after the silicon body is etched in a penetrating way by laser;
step twoAnd no silicon wafer gap is formed between the three-dimensional groove grooves etched by the laser on the reverse side of the silicon wafer: the reverse side of the silicon dioxide wafer D with a certain thickness is subjected to laser etching to obtain a wafer D with a thickness DbottomIn which dbottomA silicon wafer thickness d of 90% or more; no twill-shaped silicon body is left after the groove is etched by laser on the reverse side;
step three, flattening the periphery of the groove wall by using a polishing technology: the step is only carried out on a silicon semiconductor or other semiconductors which can cause uneven groove walls in the deep etching process, and some types of semiconductors such as zinc oxide are not damaged in laser etching, so the step is not needed;
step four, boron diffusion doping along the trench wall: this step is carried out only on a silicon semiconductor or a semiconductor having properties similar to silicon, with a doping thickness of 1 micron;
step five, filling the three-dimensional groove: filling the silicon semiconductor wafer with polysilicon and the zinc oxide semiconductor wafer with metal; the filled regions are denoted by a 'and E', and trench electrodes are formed;
sixthly, front laser deep etching of the central columnar electrode: the etching thickness is the thickness d of the whole wafer, and the etching width is 10 micrometers;
step seven, filling the central columnar electrode C with polysilicon or metal;
step eight, plating metal layers on all the electrodes: the front surface is a metal layer K, and the back surface is a metal layer L.
Further, in the first step, the oxidation protection layer F is a silicon dioxide layer.
Further, in the first step, the width of the trench a is 10 micrometers.
Further, in the third step, silicon and diamond single-substance element semiconductors need to be polished and diffusion doping of the trench wall is carried out; the zinc oxide-based compound semiconductor does not need to be subjected to this process step.
Further, in the sixth step, the central columnar electrode is square.
Further, the method is completed in a constant temperature and humidity hundred-grade clean room.
Further, in the above method, the detector structure is: the front groove electrode 2, the back groove electrode 5 and the central columnar electrode 3 are formed by etching and diffusion doping of a semiconductor substrate 1, the front groove electrode 2 and the back groove electrode 5 surround the central columnar electrode 3, and the front groove electrode 2 and the back groove electrode 5 are rectangular hollow electrodes. The groove electrode 2 with the thickness less than ten percent of the front surface is etched into two halves with the same structure and complementary structures, no etching part between the groove electrodes 2 forms a twill-shaped semiconductor substrate 4, and the width of the twill-shaped semiconductor substrate 4 is less than 10 mu m. The prepared open-close type box-type electrode semiconductor detector can form an M x N array detector by sharing the electrode wall of the trench electrode 2.
Compared with the prior art, the invention has the beneficial effects that:
the volume of the detector is less than ten percent, and a twill-shaped semiconductor substrate is reserved when the groove electrode is etched, so that the detector units are directly connected with each other when the process is realized. The rest parts are all through groove electrodes, and the detection efficiency of the detector is further improved.
The design of the invention is improved to be less than ten percent of the volume of the semiconductor substrate with the twill shape, the part of the semiconductor substrate can be used as the process realization condition for connecting two detector units, and compared with the prior patent 'an open-close type box-type electrode semiconductor detector', the dead zone area of the patent is reduced by 90 percent on the basis of the prior patent.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a side view of a wafer according to the present invention with three-dimensional laser etched trenches (leaving silicon gaps between the trenches) on the front side.
FIG. 2 is a top view of a wafer front side laser etched three-dimensional trench (leaving a silicon gap between trenches).
Fig. 3 is a side view of a wafer with three-dimensional laser etched trenches on the reverse side (no silicon gaps left between the trenches).
FIG. 4 is a top view of a three-dimensional laser etched trench in the reverse side of a wafer.
Figure 5 is a side view of boron diffusion doping of the three-dimensional trench walls of a silicon wafer.
Fig. 6 forms a three-dimensional trench electrode.
Fig. 7 etches the center pillar electrode.
Fig. 8 forms a central columnar electrode.
FIG. 9 is a metallization electrode.
Figure 10 is a three-dimensional schematic of a detector.
Fig. 11 is a schematic diagram of the electric field distribution of the front-side trench electrode covered (with a twill-like matrix) portion. At the part where the semiconductor substrate is connected with the peripheral groove electrode, the electric field distribution is obviously disturbed, the value of the electric field is lowered, and a small part of low electric field area is formed.
Fig. 12 is a schematic view of the electric field distribution of the reverse trench electrode (electrode area full etch) portion. The electric field distribution of the cross section in the active area of the semiconductor substrate is smoother. The area of this part is further increased to this patent for the detection efficiency of detector improves.
In the figure, 1: semiconductor substrate, 2: front side trench electrode (leaving a twill-shaped semiconductor substrate), 3: center columnar electrode, 4: twill-like semiconductor substrate, 5: the reverse trench electrode (electrode area etched entirely).
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in the figures 1-12 of the drawings,
a square open-close type box-shaped electrode semiconductor detector comprises a front groove electrode 2, a back groove electrode 5 and a central column electrode 3, wherein the front groove electrode 2, the back groove electrode 5 and the central column electrode 3 are formed by a semiconductor substrate 1 through etching and diffusion doping methods, the front groove electrode 2 and the back groove electrode 5 surround the central column electrode 3, and the front groove electrode 2 and the back groove electrode 5 are rectangular hollow electrodes; the front groove electrode 2 is etched into two halves which have the same structure and are mutually complementary in structure, a twill-shaped semiconductor substrate 4 is formed at the part, which is not etched, between the front groove electrode 2, and the width of the twill-shaped semiconductor substrate 4 is less than 10 mu m; electrode contact layers are covered on the front groove electrode 2 and the central columnar electrode 3, silicon dioxide insulating layers are covered on the surfaces of other semiconductor substrates 1 of which the front surfaces are not covered with the electrode contact layers, and silicon dioxide substrate layers are arranged on the bottom surfaces.
Further, the thickness of the front trench electrode 2 is less than one tenth of the overall height of the detector.
Furthermore, the square open-close type box-shaped electrode semiconductor detector can form an M x N array of detector arrays through the electrode walls of the shared front groove electrodes (2).
Furthermore, the semiconductor substrate 1 is made of silicon, silicon oxide, Ge, HgI2、GaAs、 TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI2Or a combination of one or more of AlSb.
A method for preparing a square open-close type box-type electrode semiconductor detector comprises the following steps:
1) laser etching three-dimensional grooves on the front surface of a semiconductor wafer, and leaving silicon wafer gaps between the grooves: laser etching the front surface of a wafer D with an oxide protective layer F with a certain thickness to obtain a wafer D with a thickness DtopTrench a, having a width of about 10 microns. Fig. 2 is a top view after etching, and it can be seen from fig. 2 that a diagonal silicon body B with a certain width is left between trenches. Wherein B is D is the small part of the silicon body left after etching. The central columnar electrode C is penetrated by laserThe silicon body is etched and then diffused and doped, and the specific steps are described in detail later.
2) And (3) carrying out laser etching on the back surface of the silicon wafer to form three-dimensional grooves (no silicon wafer gaps are formed between the grooves): as shown in fig. 3, a wafer D of silicon dioxide with a certain thickness is grown by laser etching to the reverse side to a thickness DbottomIn which dbottomGreater than or equal to 90% of the thickness d of the silicon wafer. Fig. 3 is a side view. Fig. 4 is a bottom view after etching. As can be seen from fig. 4, no diagonal silicon bodies are left after the grooves are reverse laser etched.
3) Flattening the periphery of the groove wall by using an etching technology: this step is only performed on silicon semiconductors or other semiconductors that may cause irregularities in the trench walls during deep etching, and some types of semiconductors such as zinc oxide are not damaged during laser etching, so this step is not required.
4) Boron diffusion doping along trench walls: this step is only performed on a silicon semiconductor or a semiconductor of similar properties to silicon, with a doping thickness of 1 micron.
5) Filling the three-dimensional groove: the silicon semiconductor wafer is filled with polysilicon and the zinc oxide semiconductor wafer is filled with metal. The filled regions are denoted by A 'and E', and trench electrodes are formed
6) Front laser deep etching of central columnar electrode (square): the etching thickness is the thickness d of the whole wafer, and the etching width is about 10 microns.
7) The center columnar electrode C is filled with polysilicon or metal.
8) Plating all electrodes with a metal layer: the front surface is a metal layer K, and the back surface is a metal layer L.
Further, the oxidation protection layer F is a silicon dioxide layer.
In step 1), if the thickness of the probe is 150 micrometers, the thickness of the twill-shaped silicon body is about 15 micrometers, and how to accurately control the remaining thickness of the probe silicon body and maintain the smoothness of the electrode wall of the trench of the probe is a great difficulty for semiconductor manufacturing, especially for ultra-pure high-resistance silicon semiconductors. The invention uses the laser etching method, and can more efficiently improve the defect of the traditional semiconductor deep etching.
Meanwhile, in the current semiconductor deep etching process, taking a silicon process as an example, the most advanced etching technology in the world at present adopts a method of etching while protecting, the protection of the trench electrode wall is carried out by etching for several microns, and then the etching is continued. The method has complicated steps and low efficiency, and can not ensure the smoothness of the etched wall. The method disclosed by the patent adopts laser etching, the etching degree is deep, the etching is completed at one time, and the surrounding groove electrode wall is polished after the etching. For some compound semiconductors, polishing is not even necessary.
The schematic diagram of the unit three-dimensional structure of the detector is as follows:
the main reference symbols indicate that less than ten percent of the volume of the detector, as shown in fig. 10, leaves a diagonal semiconductor matrix when etching the trench electrode for direct interconnection of the detector units when the process is implemented. The rest parts are all through groove electrodes, and the detection efficiency of the detector is further improved.
FIG. 10 is a three-dimensional schematic view showing neither the oxidation protection layer nor the metal layer. The front groove electrode 2, the back groove electrode 5 and the central columnar electrode 3 are formed by etching and diffusion doping of a semiconductor substrate 1, the front groove electrode 2 and the back groove electrode 5 surround the central columnar electrode 3, and the front groove electrode 2 and the back groove electrode 5 are rectangular hollow electrodes. The groove electrode 2 with the thickness less than ten percent of the front surface is etched into two halves with the same structure and complementary structures, no etching part between the groove electrodes 2 forms a twill-shaped semiconductor substrate 4, and the width of the twill-shaped semiconductor substrate 4 is less than 10 mu m. The prepared open-close type box-type electrode semiconductor detector can form an M x N array detector by sharing the electrode wall of the trench electrode 2.
The design is improved to be less than ten percent of the volume, a twill-shaped semiconductor substrate is reserved, the part of the semiconductor substrate can be used as a process realization condition for connecting two detector units, and compared with the prior patent of 'an open-close type box-type electrode semiconductor detector', the dead zone area of the patent is reduced by 90 percent on the basis of the prior patent.
The semiconductor detector obtained by the steps of the invention has simple process steps, abandons the traditional deep etching technology which is complex and difficult to operate, adopts the laser etching technology, simplifies the manufacture of the detector with complex design and has strong repeatability. After various parameters are adjusted, the method can be operated in a laboratory and is beneficial to industrial batch production and the like.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (1)
1. A square open-close type box-type electrode semiconductor detector is characterized by comprising a front groove electrode (2), a back groove electrode (5) and a central columnar electrode (3), wherein the front groove electrode (2), the back groove electrode (5) and the central columnar electrode (3) are prepared and formed by a semiconductor substrate (1) through etching and diffusion doping methods, the front groove electrode (2) and the back groove electrode (5) surround the central columnar electrode (3), and the front groove electrode (2) and the back groove electrode (5) are rectangular hollow electrodes; the front groove electrode (2) is etched into two halves which have the same structure and are mutually complementary in structure, a twill-shaped semiconductor substrate (4) is formed at the part, which is not etched, between the front groove electrode (2), and the width of the twill-shaped semiconductor substrate (4) is less than 10 mu m; electrode contact layers cover the front groove electrode (2) and the central columnar electrode (3), silicon dioxide insulating layers cover the surfaces of other semiconductor substrates (1) of which the front surfaces are not covered with the electrode contact layers, and a silicon dioxide substrate layer is arranged on the bottom surface; the reverse side groove electrode (5) is of a complete square ring structure;
the thickness of the front groove electrode (2) is less than one tenth of the whole height of the detector;
the square open-close type box-type electrode semiconductor detector can form an M x N array detector array through the electrode wall of the common front groove electrode (2);
the semiconductor substrate (1) is made of silicon, silicon oxide, Ge and HgI2、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI2Or a combination of one or more of AlSb.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810299187.8A CN108428750B (en) | 2018-04-04 | 2018-04-04 | Square opening and closing type box-shaped electrode semiconductor detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810299187.8A CN108428750B (en) | 2018-04-04 | 2018-04-04 | Square opening and closing type box-shaped electrode semiconductor detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108428750A CN108428750A (en) | 2018-08-21 |
| CN108428750B true CN108428750B (en) | 2021-02-02 |
Family
ID=63160551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810299187.8A Active CN108428750B (en) | 2018-04-04 | 2018-04-04 | Square opening and closing type box-shaped electrode semiconductor detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108428750B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994453A (en) * | 2019-04-01 | 2019-07-09 | 湘潭大学 | Embedding trapezoidal box-like three dimension detector |
| CN113659018B (en) * | 2021-08-16 | 2024-01-26 | 中国科学院微电子研究所 | Detector |
| CN113658962B (en) * | 2021-08-16 | 2024-04-19 | 中国科学院微电子研究所 | Detector, manufacturing method and device thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205643730U (en) * | 2016-04-29 | 2016-10-12 | 湘潭大学 | Open entire formula box type electrode semiconductor detector |
| CN106449801A (en) * | 2016-12-10 | 2017-02-22 | 湘潭大学 | Open-and-close type three-dimensional trench electrode silicon detector |
| CN107221570A (en) * | 2017-07-21 | 2017-09-29 | 湘潭大学 | A kind of Novel square drives entire formula core-shell electrode semiconductor detector |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204087B1 (en) * | 1997-02-07 | 2001-03-20 | University Of Hawai'i | Fabrication of three-dimensional architecture for solid state radiation detectors |
| CN107221569A (en) * | 2017-07-21 | 2017-09-29 | 湘潭大学 | A kind of novel hexagonal drives entire formula core-shell electrode semiconductor detector |
| CN208077991U (en) * | 2018-04-04 | 2018-11-09 | 湘潭大学 | A kind of rectangular combined type core-shell electrode semiconductor detector |
-
2018
- 2018-04-04 CN CN201810299187.8A patent/CN108428750B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205643730U (en) * | 2016-04-29 | 2016-10-12 | 湘潭大学 | Open entire formula box type electrode semiconductor detector |
| CN106449801A (en) * | 2016-12-10 | 2017-02-22 | 湘潭大学 | Open-and-close type three-dimensional trench electrode silicon detector |
| CN107221570A (en) * | 2017-07-21 | 2017-09-29 | 湘潭大学 | A kind of Novel square drives entire formula core-shell electrode semiconductor detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108428750A (en) | 2018-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108428750B (en) | Square opening and closing type box-shaped electrode semiconductor detector | |
| KR900007606B1 (en) | Semiconductor memory | |
| US8558188B2 (en) | Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>1.0E4) | |
| CN108231947B (en) | Single photon avalanche diode detector structure and manufacturing method thereof | |
| CN109300992B (en) | Single photon avalanche diode with high detection efficiency and manufacturing method thereof | |
| CN107256897A (en) | A kind of circle drives entire formula cell type electrode-semiconductor detector | |
| CN109686812B (en) | Bonded silicon PIN radiation response detector based on tunneling oxide layer and preparation method | |
| US9318627B2 (en) | Semiconductor radiation detector | |
| CN107221569A (en) | A kind of novel hexagonal drives entire formula core-shell electrode semiconductor detector | |
| CN107221570A (en) | A kind of Novel square drives entire formula core-shell electrode semiconductor detector | |
| CN102214723B (en) | Semiconductor radiation sensing device and manufacturing method thereof | |
| US5854506A (en) | Semiconductor particle-detector | |
| CN216563149U (en) | Three-dimensional epitaxial injection hexagonal electrode silicon detector | |
| CN108511554B (en) | Preparation method of square composite shell type electrode semiconductor detectors | |
| CN112071945A (en) | Spiral ring electrode silicon array detector | |
| CN208077991U (en) | A kind of rectangular combined type core-shell electrode semiconductor detector | |
| CN114005893A (en) | Three-dimensional epitaxial injection hexagonal electrode silicon detector | |
| CN115826031A (en) | High-purity germanium drift detector | |
| CN107256905A (en) | A kind of triangle drives entire formula cell type electrode-semiconductor detector | |
| CN206878010U (en) | A kind of circle drives entire formula cell type electrode-semiconductor detector | |
| US20130181318A1 (en) | Highly efficient cmos technology compatible silicon photoelectric multiplier | |
| CN207441710U (en) | A kind of Novel square opens entire formula core-shell electrode semiconductor detector | |
| CN109994454B (en) | Hexagonal box-shaped three-dimensional detector and preparation method thereof | |
| CN206878011U (en) | A kind of novel hexagonal drives entire formula core-shell electrode semiconductor detector | |
| Pellegrini et al. | Double sided 3D detector technologies at CNM-IMB |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |