CN206878010U - A kind of circle drives entire formula cell type electrode-semiconductor detector - Google Patents
A kind of circle drives entire formula cell type electrode-semiconductor detector Download PDFInfo
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- CN206878010U CN206878010U CN201720888228.8U CN201720888228U CN206878010U CN 206878010 U CN206878010 U CN 206878010U CN 201720888228 U CN201720888228 U CN 201720888228U CN 206878010 U CN206878010 U CN 206878010U
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Abstract
A kind of circle drives entire formula cell type electrode-semiconductor detector, the circle drives entire formula cell type electrode-semiconductor detector, by semiconductor substrate, and the trench electrode composition nested with central cylindrical electrode that semiconductor substrate etching forms, trench electrode is cylindrical frame hollow electrode, several valves that trench electrode is etched into that structure is similar and echoed one another in structure；Two offsides of trench electrode have twill-like entity gap, trench electrode and central cylindrical electrode are hollow electrode, ion is carried out again after etched to diffuse to form, the circle is opened in the trench electrode and central cylindrical electrode of entire formula cell type electrode-semiconductor detector top surface covered with contact electrode layer, top surface other semiconductor portions covering silicon dioxide insulating layer, bottom surface is provided with silicon dioxide liner bottom.The utility model deadband eliminating, etching technics be through etching technics, during work, particle can two-side incidence, reaction is sensitiveer, and detection efficient is higher.
Description
Technical field
High-energy physics is the utility model is related to, astrophysics, Aero-Space are military, the semiconductor of the technical field such as medical science
Detector field, more particularly to a kind of circle drive entire formula cell type electrode-semiconductor detector.
Background technology
Semiconductor detector is mainly used in the fields such as high-energy physics, astrophysics, has high energy resolution, highly sensitive
Degree, the features such as response time is fast, Radiation hardness is strong, and be easily integrated, the field such as detecting in X ray, high energy particle has significantly
Application value.In the field such as high-energy physics and astrophysics, detector is under intense radiation conditions and worked, to semiconductor detector
Energy resolution response speed etc. requires high, and has low-leakage current and low total depletion voltage, has not for its volume size etc.
With requirement.
Semiconductor detector works under reverse bias, when particle injects detector sensitive volume, under reverse bias, production
Raw electron-hole pair, wherein electronics after reaching positive pole to positive polar motion, being collected, hole is received to being moved to negative pole by negative pole
Collection, electric signal etc. is formed in outside reading circuit.
Relative to traditional " three-dimensional column electrode-semiconductor detector ", the literary newest proposition in laboratory in U.S.'s Brooker sea
" three-dimensional trench electrode semiconductor detector " overcomes " saddle point " of Potential Distributing and Electric Field Distribution, makes Electric Field Distribution more equal
It is even.However, " three-dimensional trench electrode semiconductor detector " because of the limitation of design, to form substrate in technique, in electrode etch
Shi Buneng is completely through whole semiconductor, and the partial electric-field distribution not etched is weaker, and distribution of charges is uneven, and detection efficient is low,
It is big to the performance impact of detector.Our this part is referred to as " dead band ", and " dead band " accounts for 20%- in single detector unit
30%.If making array, bigger ratio can be occupied.Moreover, when " three-dimensional trench electrode semiconductor detector " works, particle
One side incidence is only capable of, detection efficient can be reduced.
Therefore it provides a kind of circle drives entire formula cell type electrode-semiconductor detector, solve to ask existing for above-mentioned prior art
Topic.
Utility model content
To solve the above-mentioned problems of the prior art, the purpose of this utility model is that providing a kind of circle opens entire formula box
Type electrode-semiconductor detector.Optimize structure type, deadband eliminating, optimization one side etching technics is through etching technics, work
When, particle can two-side incidence, reaction it is sensitiveer, detection efficient is higher.
To reach above-mentioned purpose, the technical solution of the utility model is：
A kind of circle drives entire formula cell type electrode-semiconductor detector, and the circle drives entire formula cell type electrode-semiconductor detector,
The trench electrode 2 formed composition nested with central cylindrical electrode 3, groove electricity are etched by semiconductor substrate 1, and semiconductor substrate 1
Pole 2 is cylindrical frame hollow electrode, several valves that trench electrode 2 is etched into that structure is similar and echoed one another in structure；Trench electrode 2
Two offsides have twill-like entity gap, trench electrode 2 and central cylindrical electrode 3 are hollow electrode, it is etched after carry out again
Ion diffuses to form, and semiconductor substrate 1 uses lightly-doped silicon, and trench electrode 2 and central cylindrical electrode 3 use heavily doped silicon, its
In, the P/N types of trench electrode 2 and central cylindrical electrode 3 are on the contrary, the circle opens entire formula cell type electrode-semiconductor detector top surface
Trench electrode 2 and central cylindrical electrode 3 on partly led covered with contact electrode layer 4, other of top surface uncovered electrode contact layer 4
The surface of body matrix 1 covers silicon dioxide insulating layer 5, and bottom surface is provided with silicon dioxide liner bottom 6.
Further, the trench electrode 2 and central cylindrical electrode 3 by semiconductor substrate 1 by being mixed through etching, diffusion
Miscellaneous method prepares to be formed；Detector is a PIN junction：P-type semiconductor-insulating barrier-N-type semiconductor shape, wherein, heavy doping
The resistivity of P/N type semiconductor silicons is different from the P/N semiconductor silicons being lightly doped, and is performed etching on semiconductor substrate, forms ditch
Groove electrode 2 and central cylindrical electrode 3, then trench electrode 2 is using N-type silicon heavy doping, and central cylindrical electrode 3 is using P-type silicon weight
Doping, semiconductor substrate 1 are lightly doped using p-type.
Further, the detector thickness is that electrode height is 100-300 microns.
Further, the detector thickness is 150 microns.
Further, the detector circular radius is 5-100 microns.
Further, central cylindrical electrode 3 and the width of trench electrode 2 are 5-10 microns.
Further, trench electrode 2 is etched into that structure is similar and two valves in a center of symmetry in structure, forms seam among it
Gap, gap are on the basis of parallel segment is tangent with nested cylinder, and to protrude the tip of side as the center of circle, radius is that electrode is wide
0.5 to 0.7 times of degree does circle, the semiconductor substrate outside tangent part is etched away, so as to the semiconductor substrate left；
Using detector radius as R, electrode width r, gap width g, then exist, relatively prominent side tip gap side
Edge meets α >=90- θ with circumference angle theta；
Sin α=(R-r/2-g/2)/R.
Further, the contact electrode layer 4 is aluminium electrode contact layer；The contact electrode layer thickness is 1 micron, described
Silicon dioxide substrates thickness degree is 1 micron, and the thickness of silicon dioxide insulating layer 5 is 1 micron.
Further, the circle opens electrode wall of the entire formula cell type electrode-semiconductor detector by shared trench electrode 2
Energy split composition M*N detector arrays, wherein M, N are positive integer.The line in two gaps and the center of circle in single circular lattice
It is parallel with the line in the center of circle with two gaps of other lattices.
Further, the semi-conducting material of the semiconductor substrate 1 uses Si, Ge, HgI2、GaAs、TiBr、CdTe、
CdZnTe、CdSe、GaP、HgS、PbI2With one or more combinations in AlSb.
Relative to prior art, the beneficial effects of the utility model are：
The utility model optimizes the structure type of electrode-semiconductor detector, eliminates dead band, optimization one side etching work
Skill be through etching technics, during work, particle can two-side incidence, reaction is sensitiveer, and detection efficient is higher.
Brief description of the drawings
Fig. 1 is the three dimensional structure diagram that the utility model circle drives entire formula cell type electrode-semiconductor detector.
Fig. 2 is the top electrode contact layer and titanium dioxide that the utility model circle drives entire formula cell type electrode-semiconductor detector
Silicon insulating barrier schematic diagram.
Fig. 3 is that the utility model circle opens entire formula cell type electrode-semiconductor detector 4x4 array plane figures.
Fig. 4 is that the utility model circle opens entire formula cell type electrode-semiconductor detector 4x4 cubical array figures.
Fig. 5 is the side view that the utility model circle drives entire formula cell type electrode-semiconductor detector.
Fig. 6 is the Electric Field Distribution schematic diagram that the utility model circle drives entire formula cell type electrode-semiconductor detector.
Fig. 7 is the utility model slit-shaped tangentially and detector position graph of a relation.
Wherein, 1- semiconductor substrates, 2- trench electrodes, 3- central cylindrical electrodes, 4- contact electrode layers, 5- silica are exhausted
Edge layer, 6- silicon dioxide liner bottoms.
Embodiment
Technical solutions of the utility model are described in further detail with reference to the accompanying drawings and detailed description：
As shown in figures 1 to 6, a kind of circle drives entire formula cell type electrode-semiconductor detector, and the circle opens entire formula cell type electrode half
Conductor detector, it is nested with central cylindrical electrode 3 by semiconductor substrate 1, and the trench electrode 2 that the etching of semiconductor substrate 1 forms
Form, trench electrode 2 is cylindrical frame hollow electrode, and trench electrode 2 is etched into that structure is similar and echoed one another in structure several
Valve；Two offsides of trench electrode 2 have twill-like entity gap, and trench electrode 2 and central cylindrical electrode 3 are hollow electrode, through carving
Ion is carried out again after erosion to diffuse to form, semiconductor substrate 1 uses lightly-doped silicon, and trench electrode 2 and central cylindrical electrode 3 use
Heavily doped silicon, wherein, the P/N types of trench electrode 2 and central cylindrical electrode 3 are on the contrary, the circle opens entire formula cell type electrode partly leads
Covered with contact electrode layer 4, the contact of top surface uncovered electrode in the trench electrode 2 and central cylindrical electrode 3 of bulk detector top surface
Other surfaces of semiconductor substrate 1 covering silicon dioxide insulating layer 5 of layer 4, bottom surface is provided with silicon dioxide liner bottom 6.This practicality
Detector of the design of new middle circular cross-section compared with other structures type in the energy resolution of detector is higher, adds biased electrical
During pressure, detector sensitive area Electric Field Distribution is more uniformly distributed.This design is more beneficial for making large area unit and sensitively detected
Device, it is applicable to detection and the high energy particle detection application of the deep space grenz ray of high energy resolution.
Further, the trench electrode 2 and central cylindrical electrode 3 by semiconductor substrate 1 by being mixed through etching, diffusion
Miscellaneous method prepares to be formed；Detector is a PIN junction：P-type semiconductor-insulating barrier-N-type semiconductor shape, wherein, heavy doping
The resistivity of P/N type semiconductor silicons is different from the P/N semiconductor silicons being lightly doped, and is performed etching on semiconductor substrate, forms ditch
Groove electrode 2 and central cylindrical electrode 3, then trench electrode 2 is using N-type silicon heavy doping, and central cylindrical electrode 3 is using P-type silicon weight
Doping, semiconductor substrate 1 are lightly doped using p-type.
Further, the detector thickness is that electrode height is 100-300 microns.
Further, the detector thickness is 150 microns.
Further, central cylindrical electrode 3 and the width of trench electrode 2 are 5-10 microns.
Further, the detector circular radius is 5-100 microns.
Further, trench electrode 2 is etched into that structure is similar and two valves in a center of symmetry in structure, forms seam among it
Gap, gap are on the basis of parallel segment is tangent with nested cylinder, and to protrude the tip of side as the center of circle, radius is that electrode is wide
0.5 to 0.7 times of degree does circle, the semiconductor substrate outside tangent part is etched away, so as to the semiconductor substrate left；
Using detector radius as R, electrode width r, gap width g, then exist, relatively prominent side tip gap side
Edge meets α >=90- θ with circumference angle theta；
Sin α=(R-r/2-g/2)/R.
This design can not only eliminate single detector unit dead zone area, detector is used when making through quarter
Erosion, improve detector cells detection efficient, moreover it is possible to make each unit effective by twill-like semiconductor when detector forms array
Search coverage is connected with each other.The semiconductor substrate left between trench electrode is by can electrode and semiconductor-based after particular design
Influencing each other for the property of body reaches minimum, so has smaller existing fringing field region, and each unit after detector forms array
Between coherence be also reduced to minimum.
Further, the contact electrode layer 4 is aluminium electrode contact layer；The contact electrode layer thickness is 1 micron, described
Silicon dioxide substrates thickness degree is 1 micron, and the thickness of silicon dioxide insulating layer 5 is 1 micron.
Further, the circle opens electrode wall of the entire formula cell type electrode-semiconductor detector by shared trench electrode 2
Energy split composition M*N detector arrays, wherein M, N are positive integer.
Further, the semi-conducting material of the semiconductor substrate 1 uses Si, Ge, HgI2、GaAs、TiBr、CdTe、
CdZnTe、CdSe、GaP、HgS、PbI2With one or more combinations in AlSb.
Operation principle of the present utility model is：
It is that a kind of circle drives entire formula cell type electrode-semiconductor detector as shown in Figure 1.Fig. 2 is sectional view, the He of trench electrode 2
Central cylindrical electrode 3 is on semiconductor substrate 1 by preparing and to be formed through etching, the method for diffusing, doping.According to existing process
Technology, detector thickness are electrode height in 100 to 300 microns of arbitrary values.Trench electrode 2 is surrounded on central cylindrical electrode
Outside 3, wherein, central cylindrical electrode 3 and the width of trench electrode 2 are 10 microns, and trench electrode 2 is hollow electrode.Groove electricity
Two valves that pole 2 is etched into that structure is similar and taken concerted action in structure.The circle drives entire formula cell type electrode-semiconductor detector
Covered with contact electrode layer on top electrode, other area covering silicon dioxide insulating layers, bottom surface is provided with silicon dioxide substrates
Layer.The contact electrode layer is aluminium electrode contact layer.The contact electrode layer thickness is 1 micron, the silicon dioxide liner bottom
Thickness is 1 micron.Preparation-obtained semiconductor detector can form M*N battle arrays by sharing the electrode wall of trench electrode 2
Row detector, wherein M, N are positive integer.
Fig. 3 is that circle opens entire formula cell type electrode-semiconductor detector array plan, and Fig. 4 is that novel circle opens entire formula cell type
Electrode-semiconductor detector cubical array figure.The new detector is in addition to being adapted in general silicon semiconductor material, it is possible to use
Various other semi-conducting material manufacturings.Such as：From Ge, HgI2, GaAs, TiBr, CdTe, CdZnTe, CdSe, GaP, HgS, PbI2 and
AlSb etc..
Trench electrode 2 is etched into that structure is similar and two valves in a center of symmetry in structure, forms gap among it, gap is
On the basis of parallel segment is tangent with nested cylinder, with protrude side tip for the center of circle, radius be electrode width 0.5 to
0.7 times is done circle, etches away the semiconductor substrate outside tangent part, so as to the semiconductor substrate left；
Using detector radius as R, electrode width r, gap width g, then exist, relatively prominent side tip gap side
Edge meets α >=90- θ with circumference angle theta；
Sin α=(R-r/2-g/2)/R.Purpose is that when electrode is through etching, semiconductor substrate 1 can pass through this part
Matrix contacted with other units or peripheral wafer, so as to not fall out, solve the problems, such as making from the source of design optimization.
Each detector cells are a PIN junctions：P-type semiconductor-insulating barrier-N-type semiconductor shape, wherein, heavy doping
The resistivity of P/N type semiconductor silicons is different from the P/N semiconductor silicons being lightly doped, and is performed etching on semiconductor substrate, hollow ditch
Groove and hollow center post, heavy doping is then carried out to form anodic-cathodic.In order to obtain optimal detector performance, semiconductor is taken
Matrix is the P-type semiconductor silicon being lightly doped, and PN junction is used in structure design at peripheral groove.Trench electrode is that N-type silicon is heavily doped
Miscellaneous, contre electrode is P-type silicon heavy doping, and material for detector is the silicon that p-type is lightly doped.Contre electrode is negative pole, and exterior channels are
Positive pole.The utility model detector Electric Field Distribution schematic diagram is illustrated in figure 6, after bias voltage, it is seen that with detector
The increase of radius, electric-field intensity increase, but as angle change, electric-field intensity distribution almost do not fluctuate.Electric-field intensity
Uniformity substantially increases the detection performance of detector, and the Electric Field Distribution of the detector of cylinder design almost relies on without angle
Property, unit detection performance is substantially superior compared with the detector of other shapes, and (Electric Field Distribution of other detectors is in ripple in this case
Wave-like, the angle in detector section is more sharp, and fluctuation is bigger).
In the utility model the purpose of slit design be in order that the area in gap is as few as possible, but simultaneously but do not influence with
Single cylinder is the lattice resistance to overturning of structure cell, and influence electric-field intensity as few as possible, based on this, as shown in fig. 7, groove
Electrode 2 is etched into that structure is similar and two valves in a center of symmetry in structure, forms gap among it, gap be parallel segment with
On the basis of nested cylinder is tangent, to protrude the tip of side as the center of circle, radius is that 0.5 to 0.7 times of electrode width does circle, is etched
Fall the semiconductor substrate outside tangent part, so as to the semiconductor substrate left.
Using detector radius as R, electrode width r, gap width g, then exist, relatively prominent side tip gap side
Edge meets α >=90- θ with circumference angle theta；
Sin α=(R-r/2-g/2)/R.
It is described above, only specific embodiment of the present utility model, but the scope of protection of the utility model is not limited to
In this, any change or replacement expected without creative work, should all cover within the scope of protection of the utility model.
Therefore, the scope of protection of the utility model should be determined by the scope of protection defined in the claims.
Claims (10)
1. a kind of circle drives entire formula cell type electrode-semiconductor detector, it is characterised in that the circle is opened entire formula cell type electrode and partly led
Bulk detector, the trench electrode (2) formed and central cylindrical electrode are etched by semiconductor substrate (1), and semiconductor substrate (1)
(3) nested to form, trench electrode (2) be cylindrical frame hollow electrode, and trench electrode (2) is etched into that structure is similar and mutual in structure
For several valves of concord；Two offsides of trench electrode (2) have twill-like entity gap, trench electrode (2) and central cylindrical electrode (3)
For hollow electrode, ion is carried out again after etched and is diffuseed to form, semiconductor substrate (1) uses lightly-doped silicon, trench electrode (2)
And central cylindrical electrode (3) uses heavily doped silicon, wherein, the P/N types of trench electrode (2) and central cylindrical electrode (3) are on the contrary, institute
State circular open in the trench electrode (2) and central cylindrical electrode (3) of entire formula cell type electrode-semiconductor detector top surface covered with electricity
Pole contact layer (4), other semiconductor substrate (1) surfaces covering silicon dioxide insulating layer of top surface uncovered electrode contact layer (4)
(5), bottom surface is provided with silicon dioxide liner bottom (6).
2. a kind of circle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that the ditch
Groove electrode (2) and central cylindrical electrode (3) by semiconductor substrate (1) by preparing and being formed through etching, the method for diffusing, doping,
Detector is a PIN junction：P-type semiconductor-insulating barrier-N-type semiconductor shape, wherein, the electricity of the P/N type semiconductor silicons of heavy doping
Resistance rate is different from the P/N semiconductor silicons being lightly doped, and is performed etching on semiconductor substrate, forms trench electrode (2) and central rods
Shape electrode (3), then trench electrode (2) use N-type silicon heavy doping, central cylindrical electrode (3) uses P-type silicon heavy doping, described
Semiconductor substrate (1) is lightly doped using p-type.
3. a kind of circle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that the spy
It is that electrode height is 100-300 microns to survey device thickness.
4. a kind of circle according to claim 3 drives entire formula cell type electrode-semiconductor detector, it is characterised in that the spy
It is 150 microns to survey device thickness.
5. a kind of circle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that central rods
Shape electrode (3) and trench electrode (2) width are 5-10 microns.
6. a kind of circle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that the spy
It is 5-100 microns to survey device circular radius.
7. a kind of circle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that groove electricity
Pole 2 is etched into that structure is similar and two valves in a center of symmetry in structure, forms gap among it, gap be parallel segment with it is embedding
On the basis of set cylinder is tangent, to protrude the tip of side as the center of circle, radius is that 0.5 to 0.7 times of electrode width does circle, is etched away
Semiconductor substrate outside tangent part, so as to the semiconductor substrate left；
Using detector radius as R, electrode width r, gap width g, then exist, relatively prominent side tip slot edge with
Circumference angle theta meets α >=90- θ；
Sin α=(R-r/2-g/2)/R.
8. a kind of circle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that the electricity
Pole contact layer (4) is aluminium electrode contact layer；The contact electrode layer thickness is 1 micron, and the silicon dioxide substrates thickness degree is 1
Micron, silicon dioxide insulating layer (5) thickness are 1 micron.
9. a kind of circle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that the circle
Shape opens electrode wall energy split of the entire formula cell type electrode-semiconductor detector by sharing trench electrode (2) and forms M*N array detections
Device, wherein M, N are positive integer.
10. a kind of circle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that described
The semi-conducting material of semiconductor substrate (1) uses Si, Ge, HgI2、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、
PbI2With one or more combinations in AlSb.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256897A (en) * | 2017-07-21 | 2017-10-17 | 湘潭大学 | A kind of circle drives entire formula cell type electrode-semiconductor detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256897A (en) * | 2017-07-21 | 2017-10-17 | 湘潭大学 | A kind of circle drives entire formula cell type electrode-semiconductor detector |
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