CN106449801B - A kind of open-close type three-dimensional trench electrode silicon detector - Google Patents
A kind of open-close type three-dimensional trench electrode silicon detector Download PDFInfo
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- CN106449801B CN106449801B CN201611133684.8A CN201611133684A CN106449801B CN 106449801 B CN106449801 B CN 106449801B CN 201611133684 A CN201611133684 A CN 201611133684A CN 106449801 B CN106449801 B CN 106449801B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- 239000004411 aluminium Substances 0.000 claims description 20
- 238000003475 lamination Methods 0.000 claims description 16
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 8
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 11
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 235000003283 Pachira macrocarpa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241001083492 Trapa Species 0.000 description 1
- 235000014364 Trapa natans Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000009165 saligot Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention discloses a kind of open-close type three-dimensional trench electrode silicon detector, on silicon body open-close type trench electrode, contre electrode are formed after etching by diffusing, doping, open-close type trench electrode is surrounded on outside contre electrode, contre electrode connects negative pole, open-close type trench electrode connects positive pole, and open-close type trench electrode is opening, discontinuous cylindrical structure be present；Detector lowermost end is provided with silicon dioxide layer of protection.The present invention makes dead zone area minimum, during work particle can two-side incidence, reaction is more sensitive；Solve in the prior art three-dimensional silicon detector can only one side etching, particle can only one side it is incident, and dead band be present, the problem of influenceing detector detection performance.
Description
Technical field
The invention belongs to high-energy physics and astrophysics technical field, is related to a kind of open-close type three-dimensional trench electrode silicon detection
Device.
Background technology
Detector is widely used in the technical fields such as high-energy physics, astrophysics, Aero-Space, military affairs, medical science, in high energy
Among physics and astrophysics, detector is under strong radiation parameter, therefore has strict requirements in itself to detector, it is desirable to its
With stronger Radiation hardness, and leakage current and total depletion voltage can not be too big, also have difference for the size of its volume
Requirement.Traditional " three-dimensional trench electrode silicon detector " have many weak point, be first when carrying out electrode etch not
Whole silicon body can completely be run through so that some can not be etched detector, and the part is referred to as " dead band ", " dead band " part
Electric field is weaker, and distribution of charges is uneven, and then influences the performance of detector；And " dead band " partly occupies in single detector
20%-30%, if being made as array, bigger ratio can be occupied.Secondly, traditional " three-dimensional trench electrode silicon detector "
Can only be performed etching in one side.Finally, traditional " three-dimensional trench electrode silicon detector " at work, particle also can only be single
Face is incident.Therefore need badly and propose a kind of new three-dimensional trench electrode silicon detector.
The content of the invention
In order to achieve the above object, the present invention provides a kind of open-close type three-dimensional trench electrode silicon detector, makes dead zone area
Minimum, during work particle can two-side incidence, reaction is more sensitive.Solving three-dimensional silicon detector in the prior art can only one side
Etching, particle can only one side it is incident, and larger dead band be present, the problem of influenceing detector detection performance.
The technical solution adopted in the present invention is a kind of open-close type three-dimensional trench electrode silicon detector, to run through on silicon body
Form open-close type trench electrode, contre electrode by diffusing, doping after etching, open-close type trench electrode be surrounded on contre electrode it
Outside, contre electrode connects negative pole, and open-close type trench electrode connects positive pole, and open-close type trench electrode is opening, discontinuous cylinder be present
Structure；Detector lowermost end is provided with silicon dioxide layer of protection.
The present invention is further characterized in that further, the contre electrode is hollow cylinder, and radius is 5 μm.
Further, the contre electrode is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and thickness is 1 μ
m；Heavy doping borosilicate layer is located at below aluminium lamination, and thickness is 200 μm~500 μm.
Further, the open-close type trench electrode is the open circles band of column, 10 μm of the width of open-close type trench electrode.
Further, the open-close type trench electrode is made up of aluminium lamination and heavy doping phosphorus silicon layer, and aluminium lamination is located at the superiors, thick
Spend for 1 μm；Heavy doping phosphorus silicon layer is located at below aluminium lamination, and thickness is 200 μm~500 μm.
Further, the silicon body is p-type, and silicon body is by silicon dioxide layer and borosilicate layer is lightly doped forms, silicon dioxide layer
Positioned at the superiors, thickness is 1 μm；Borosilicate layer is lightly doped to be located at below silicon dioxide layer, thickness is 200 μm~500 μm.
Further, the silicon dioxide layer of protection thickness is 1 μm.
Further, a length of 3 μm~10 μm of the inside arc of the open-close type trench electrode opening.
The beneficial effects of the invention are as follows：In traditional " three-dimensional trench electrode silicon detector ", the n+ type grooves at silicon body center
P+ type grooves with edge are that p-type silicon matrix (dead band) is just arranged at the bottom of structure, with tradition not exclusively through total
" three-dimensional trench electrode silicon detector " compare, electrode of the invention reduces the ratio in dead band, separately completely through silicon body
Outside, based on cylindrical structural, there is bigger advantage relative to other structures, at work, Electric Field Distribution, Potential Distributing etc.
It is more uniform.Due to being equal, the knot that draws quite similar with plate condenser of the distance between cylinder, two electrodes
Fruit is more close with theoretical value.By rational size design can each unit when being combined into array, Mei Gedan
It is very close to each other between member so that dead zone area is smaller, the low area of potential-free, and each unit be it is independent unaffected,
So as to there is more preferable Effect on Detecting.And detector is at work, particle can be simultaneously incident from upper bottom surface, and traditional
" three-dimensional trench electrode silicon detector " can only be one side incidence, and so as to which particle detection efficiency is higher, reaction is sensitiveer.In technique
Can with two-sided etching, traditional three-dimensional groove can only one side etching, simplify detector manufacture craft.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is conventional three-dimensional trench electrode silicon detector structural representation.
Fig. 2 is the structural representation of the embodiment of the present invention.
Fig. 3 is the structural representation of detector array of the embodiment of the present invention.
Fig. 4 is the top view of open-close type trench electrode in the embodiment of the present invention.
In figure, 1. contre electrodes, 2. trench electrodes, 3. silicon bodies, 4.p type silicon substrates, 5. silicon dioxide layer of protection, 6. foldings
Formula trench electrode.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Conventional three-dimensional trench electrode silicon detector structure, as shown in figure 1, trench electrode 2 is surrounded on outside contre electrode 1,
There is silicon body 3 between trench electrode 2 and contre electrode 1, p-type silicon matrix 4 is provided with below trench electrode 2, at total most bottom
Portion is provided with 1 μm of silicon dioxide layer of protection 5；Contre electrode 1 connects positive pole, and its radius is 5 μm, and the superiors are 1 μm of aluminium, under aluminium lamination
Face is the silicon of 180 μm~450 μm of heavy doping phosphorus.Trench electrode 2 connects negative pole, 10 μm of its width, and the superiors are 1 μm of aluminium,
It is 180 μm~450 μm of heavy doping borosilicate below aluminium lamination.The superiors of Gui Ti 3 are 1 μm of silica, rise and separate both positive and negative polarity
Effect, below silicon dioxide layer it is 180 μm~450 μm and borosilicate is lightly doped.For borosilicate is lightly doped, its thickness is p-type silicon matrix 4
20 μm~50 μm.
Embodiment 1,
The structure of the present invention, as shown in Figure 2, Figure 4 shows, open-close type is formed by diffusing, doping after etching on silicon body 3
Trench electrode 6, contre electrode 1, open-close type trench electrode 6 are surrounded on outside contre electrode 1, and open-close type trench electrode 6 is presence
Opening, discontinuous cylindrical structure, the opening inner side arc length S of open-close type trench electrode 6 is 10 μm, is set in total bottommost
There is 1 μm of silicon dioxide layer of protection 5.
Contre electrode 1 is hollow cylinder, and contre electrode 1 connects negative pole, and its radius is 5 μm, and the superiors are 1 μm of aluminium,
It is 200 μm of heavy doping borosilicate below aluminium lamination, heavy doping borosilicate is alms giver, there is provided electronics.Open-close type trench electrode 6 is open circles
The band of column, open-close type trench electrode 6 connect positive pole, and its width is 10 μm, and the superiors are 1 μm of aluminium, are 200 μm heavily doped below aluminium lamination
Miscellaneous phosphorus silicon, heavy doping phosphorus silicon is acceptor, receives electronics.Silicon body 3 is p-type, plays a part of to separate both positive and negative polarity, and its superiors is 1 μm
Silica, below silicon dioxide layer be 200 μm and borosilicate be lightly doped, it is to form PIN junction that borosilicate, which is lightly doped, makes to exhaust
Voltage is lower, it is not easy to breakdown.
Conventional three-dimensional trench electrode silicon detector, contre electrode 1 connect positive pole, and contre electrode 1 connects negative pole in the present invention, makes consumption
Voltage to the greatest extent is lower, and Electric Field Distribution is evenly.Open-close type trench electrode 6 (p+ types groove) of the present invention and (the n+ type ditches of contre electrode 1
Groove) run through detector bottom, diffusing, doping can change material electric property, and can make atomic quantity, the distribution participated in
Form and depth meet to change structural manufacturing process demand, so that the electric property for obtaining device reaches optimal.Open-close type trench electrode 6
The effect of upper setting opening is to allow detector not need substrate, and with two-sided etching, can make the performance of detector in technique
More preferably.In addition open-close type trench electrode 6 is mutually symmetrical two halves so that detector electric fields uniform, the low area of potential-free；There is approximation
The semiconductor substrate of four water chestnut posts does not etch, and thus detector is not needed substrate, avoids traditional underlying structure and sets,
Just lower so as to exhaust voltage, detector is not easy breakdown when working.
Embodiment 2, structure of the invention, except the opening inner side arc length S of open-close type trench electrode 6 is 3 μm, heavy doping boron
Silicon, heavy doping phosphorus silicon, the thickness that is lightly doped borosilicate are that remainder is same as Example 1 beyond 500 μm.
Embodiment 3, structure of the invention, except the opening inner side arc length S of open-close type trench electrode 6 is 8 μm, heavy doping boron
Silicon, heavy doping phosphorus silicon, the thickness that is lightly doped borosilicate are that remainder is same as Example 1 beyond 300 μm.
The structure of array of the present invention, as shown in figure 3, being combined by Fig. 2 single detector unit structure.
In technique, trench electrode is etched by litho machine, and ion implanting forms.Traditional " three-dimensional trench electrode silicon
Detector " can only be one side etching, and particle one side injects, and the open-close type of open-close type three-dimensional trench electrode silicon detector of the present invention
Trench electrode 6 is six rhombuses or circular configuration that endless full etching is formed in etching groove, is that can go up bottom surface while enter
Row etching, while trench electrode is formed by ion implanting, and detector is at work, particle can be from upper bottom surface simultaneously
Incidence, and traditional " three-dimensional trench electrode silicon detector " can only be one side incidence.
It should be noted that herein, term " comprising ", "comprising" or its any other variant are intended to non-row
His property includes, so that process, method, article or equipment including a series of elements not only include those key elements, and
And also include the other element being not expressly set out, or also include for this process, method, article or equipment institute inherently
Key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that including institute
State in process, method, article or the equipment of key element and other identical element also be present.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the scope of the present invention.It is all
Any modification, equivalent substitution and improvements made within the spirit and principles in the present invention etc., are all contained in protection scope of the present invention
It is interior.
Claims (1)
1. a kind of open-close type three-dimensional trench electrode silicon detector, it is characterised in that by diffusion after etching on silicon body (3)
Doping forms open-close type trench electrode (6), contre electrode (1), and open-close type trench electrode (6) is surrounded on outside contre electrode (1),
Contre electrode (1) connects negative pole, and open-close type trench electrode (6) connects positive pole, and open-close type trench electrode (6) is has opening, discontinuous
Cylindrical structure, open-close type trench electrode (6) and contre electrode (1) run through detector bottom；Detector lowermost end is provided with two
Silicon oxide protective layer (5)；
The contre electrode (1) is hollow cylinder, and radius is 5 μm；
The contre electrode (1) is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and thickness is 1 μm；Heavy doping boron
Silicon layer is located at below aluminium lamination, and thickness is 200 μm~500 μm；
The open-close type trench electrode (6) is the open circles band of column, 10 μm of the width of open-close type trench electrode (6)；
The open-close type trench electrode (6) is made up of aluminium lamination and heavy doping phosphorus silicon layer, and aluminium lamination is located at the superiors, and thickness is 1 μm；Weight
Doping phosphorus silicon layer is located at below aluminium lamination, and thickness is 200 μm~500 μm；
The silicon body (3) is p-type, and silicon body (3) is by silicon dioxide layer and borosilicate layer is lightly doped forms, and silicon dioxide layer is positioned at most upper
Layer, thickness are 1 μm；Borosilicate layer is lightly doped to be located at below silicon dioxide layer, thickness is 200 μm~500 μm；
Silicon dioxide layer of protection (5) thickness is 1 μm；
A length of 3 μm~10 μm of the inside arc of open-close type trench electrode (6) opening.
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| CN201611133684.8A CN106449801B (en) | 2016-12-10 | 2016-12-10 | A kind of open-close type three-dimensional trench electrode silicon detector |
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| WO2011049832A2 (en) * | 2009-10-19 | 2011-04-28 | Brookhaven Science Associates, Llc | 3d-trench electrode detectors |
| CN104157659B (en) * | 2014-07-23 | 2017-02-22 | 哈尔滨工程大学 | Radiation detector crosstalk segregating radiating reinforcing pixel structure and manufacturing method thereof |
| CN205666239U (en) * | 2016-04-26 | 2016-10-26 | 湘潭大学 | Novel closed type shell mould electrode silicon detector |
| CN205643730U (en) * | 2016-04-29 | 2016-10-12 | 湘潭大学 | Open entire formula box type electrode semiconductor detector |
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