CN114899248B - Three-dimensional trench electrode detector with central electrode penetrating through and preparation method thereof - Google Patents
Three-dimensional trench electrode detector with central electrode penetrating through and preparation method thereof Download PDFInfo
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- CN114899248B CN114899248B CN202210224384.XA CN202210224384A CN114899248B CN 114899248 B CN114899248 B CN 114899248B CN 202210224384 A CN202210224384 A CN 202210224384A CN 114899248 B CN114899248 B CN 114899248B
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- 230000000149 penetrating effect Effects 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract description 10
- 239000000523 sample Substances 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a three-dimensional trench electrode detector penetrated by a central electrode and a preparation method thereof, which are used for solving the technical problems of detection dead zone, low charge collection rate caused by metal reflection and the like. A three-dimensional trench electrode probe with a central electrode penetrating the probe comprises: the device comprises a substrate, a central electrode arranged in the center of the substrate, and a groove electrode arranged on the periphery of the substrate, wherein the groove electrode is annular; the center electrode penetrates the substrate.
Description
Technical Field
The invention relates to the field of photoelectric detectors, in particular to a three-dimensional trench electrode detector with a central electrode penetrating through the three-dimensional trench electrode detector and a preparation method thereof.
Background
The three-dimensional trench electrode silicon detector gets rid of the limitation of the thickness of the chip, the electrode spacing can be freely adjusted, and the depletion voltage can be far smaller than that of the flat-plate detector. However, due to the limitation of the deep etching process and the purpose of preventing the trench electrode from falling off after penetrating the etched detection unit, the central electrode cannot penetrate the wafer, and the structure shown in fig. 1 is generally adopted, so that a larger detection dead zone exists at the bottom of the detector (such as the potential distribution and the electric field distribution in fig. 2 and 3 respectively), and the detection efficiency of deep-emission signals (such as X-ray) is reduced.
For this purpose, the present invention is proposed.
Disclosure of Invention
The invention mainly aims to provide a three-dimensional trench electrode detector with a penetrating central electrode and a preparation method thereof, which are used for solving the technical problems of detection dead zone, low charge collection rate caused by metal reflection and the like.
In order to achieve the above object, the present invention provides the following technical solutions.
A first aspect of the present invention provides a three-dimensional trench electrode probe through which a central electrode passes, comprising:
the device comprises a substrate, a central electrode arranged in the center of the substrate, and a groove electrode arranged on the periphery of the substrate, wherein the groove electrode is annular;
the center electrode penetrates the substrate.
Further, the semiconductor device further comprises a groove electrode lead-out end and a central electrode lead-out end which are respectively and electrically connected with the groove electrode and the central electrode, and the groove electrode lead-out end and the central electrode lead-out end are respectively arranged on the upper surface and the lower surface of the substrate.
Further, ions are used to form the trench electrode, which has a central cavity.
Further, the center electrode has a center cavity.
The second aspect of the present invention provides a method for manufacturing a three-dimensional trench electrode probe through which a central electrode penetrates, comprising:
providing a substrate;
an annular trench in an outer Zhou Keshi of the substrate;
forming an annular groove electrode in the annular groove;
covering oxide films on the upper surface and the lower surface of the substrate respectively;
and etching a deep trench penetrating through the substrate to the oxide film in the center of the substrate, and forming a central electrode in the deep trench.
Further, the method for forming the trench electrode includes:
and performing ion implantation on the side wall of the annular groove, and covering the side wall and the bottom wall of the annular groove with an oxide layer to enable the annular groove to be filled with oxide or to leave a cavity.
Further, the method for forming the trench electrode includes: and filling in-situ doped polysilicon in the annular groove.
Further, the opening of the annular groove is arranged on the upper surface of the substrate, and the opening of the deep groove is arranged on the lower surface of the substrate.
Further, after forming the oxide film and before forming the deep trench, further comprising: and forming a circuit leading-out end of the groove electrode on the upper surface of the substrate.
Further, the method further comprises the following steps: and forming a circuit leading-out end of the central electrode on the lower surface of the substrate.
Compared with the prior art, the invention achieves the following technical effects:
(1) The central electrode penetrates through the substrate, so that a detection dead zone at the bottom is eliminated, and the detection efficiency is improved.
(2) The leading-out ends of the central electrode and the groove electrode are arranged in different directions, so that the effect of separating different circuits is realized, metal wiring is facilitated, the product yield is improved, and the service life is prolonged; on the other hand, the problem of reflection caused by excessive coverage of one surface metal is avoided, so that the charge collection efficiency is improved.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention.
FIG. 1 is a block diagram of a conventional three-dimensional trench electrode silicon detector;
FIG. 2 is a graph of bottom potential distribution in operation of a prior art three-dimensional trench electrode silicon detector;
FIG. 3 is a graph showing the bottom electric field distribution in operation of a conventional three-dimensional trench electrode silicon detector;
fig. 4 to 7 are schematic structural views of the three-dimensional trench electrode probe with a penetrating central electrode according to the present invention.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned.
As described in the background art, the existing three-dimensional trench electrode detector still has the problem that the bottom electric field is unevenly distributed due to the detection dead zone at the bottom, and therefore, the invention designs the three-dimensional trench electrode detector with the central electrode penetrating through the substrate, and the specific description is as follows.
A detector as shown in fig. 7, comprising: a substrate 1, and a central electrode 7 arranged in the center of the substrate 1, a trench electrode 2 arranged on the periphery of the substrate 1, wherein the trench electrode 2 is annular.
The center electrode penetrates the substrate.
Compared with the existing three-dimensional trench electrode detector, the invention adopts the design that the central electrode penetrates through the substrate, so that the detection dead zone is reduced, the electric field distribution at the bottom of the central electrode is more uniform, and the full and high-efficiency collection of carriers is more facilitated.
The materials used and the doping types of the electrodes and the substrate are not particularly limited, and the invention is not limited to this, as long as the materials are used for the above-mentioned through-design detector.
For example, the substrate 1 may be a silicon-based substrate, such as one of bulk silicon, SOI, strained silicon, ultra-pure high-resistance silicon, epitaxial silicon, geSi, a group iii-v material, or a stacked material.
The trench electrode 2 may be P-doped or N-doped, and the central electrode 7 is N-doped or P-doped, respectively. The concentration of doping and chemical elements are also optional or dependent on the product application.
The trench electrode 2 may be doped polysilicon filled after etching the substrate 1, or may be formed by ion implantation after etching. In addition, since the existing three-dimensional detector has the problems of large stress and unstable structure caused by the high aspect ratio of the trench, the structure of the trench electrode 2 can be further improved, for example, a central cavity 4 is reserved in the center of the trench electrode as shown in fig. 7, so as to reduce the stress. Of course, the trench electrode 2 may be filled with a doped semiconductor or with an insulating material (typically silicon oxide) such as oxide after doping, if this is not considered. In addition, the "annular" shape characteristic of the trench electrode is not particularly limited, and may be a regular circular ring, an elliptical ring, a square ring, a polygonal ring, or the like.
The central electrode 7 extends completely through the substrate 1, which reduces the bottom detection dead space. In addition, the radius of the groove of the central electrode can be properly adjusted on the premise of ensuring the mechanical stability of the product.
For the circuit outlets (the trench electrode outlet 6 and the central electrode outlet 10) of the trench electrode 2 and the central electrode 7, which are respectively used as outlets of a power supply circuit and a readout circuit, the circuit outlets are preferably respectively arranged on two opposite surfaces of the substrate so as to realize separation of different circuits (including the readout circuit and the power supply circuit, etc.), thereby facilitating metal wiring and improving charge collection efficiency. For example, as illustrated in fig. 3, a trench electrode terminal 6 and a center electrode terminal 10 are provided on the upper surface and the lower surface of the substrate 1, respectively.
The dimensions of the structures of the present invention are not particularly limited. For a substrate with a thickness of 500 μm, the trench electrode depth is about 300 μm, and is suitable for 94V applied voltage and the like. The above are only examples and do not limit the scope of the invention.
In addition, the present invention does not impose any limitation on the array shape of the center electrode (e.g., a typical 4×4 array). This is because the central electrode in the present invention penetrates the substrate, but the trench electrode on the outer periphery does not penetrate the substrate.
There are various methods for preparing the three-dimensional trench electrode probe for obtaining the central electrode penetration of any of the above schemes, and the present invention provides one of the preferred methods, specifically as follows.
In step s1, a ring-shaped trench is provided on the outer side Zhou Keshi of the substrate 1, wherein the trench opening is upward, and the opening direction of the trench is not limited in practice, and the opening is described on the upper surface. The step can adopt a typical photoetching and etching combination mode, comprises the procedures of masking, exposing, developing and the like, and can also adopt other gas etching, plasma etching and the like.
And step s2, forming an annular groove electrode in the annular groove obtained in the step s 1. The forming means includes ion implantation or filling in-situ doped polysilicon, etc., as long as the material satisfies the conductive property of the trench electrode, the present invention is not particularly limited. In addition, since the trench electrode of the three-dimensional detector of the present invention generally has a large aspect ratio, attention is paid to uniformity of filling at the time of filling. An oxide film can be covered after the electrode is formed, so as to play a role in insulation protection.
The method for forming the electrode by ion implantation may comprise the steps of:
step s2a1, performing ion implantation on the side wall of the annular groove; the implantation concentration and the element type are determined according to the product performance requirements. Doping is completed after ion implantation, and conductivity is changed, namely shallow surface layers of the side wall and the bottom wall of the groove are converted into groove electrodes 2.
Step s2a2, then, the side walls and the bottom wall of the annular trench are covered with an oxide layer 3, which may be a typical material such as silicon oxide, to perform an insulating protection function together with balancing the mechanical stress of the substrate. The thickness of the oxide layer can be adjusted appropriately to finally fill the annular trench with oxide or leave a central cavity 4 (structure shown in fig. 4). The process of filling the oxide is simpler, and the process of leaving the central cavity can further balance the mechanical stress of the substrate, which is beneficial to improving the mechanical stability of the device.
For the manner of forming the electrode by in-situ doping of polysilicon, the following steps can be adopted:
step s2b1, directly depositing polysilicon in the annular groove, and simultaneously doping in situ, wherein the thickness of the polysilicon can be freely adjusted.
Optionally step s2b2, covering the oxide film, step s2a2.
Next, in step s3, dielectric layers 5 (as shown in fig. 4) are formed on the upper and lower surfaces of the substrate, and the dielectric layers 5 may be silicon oxide, silicon oxynitride, or other material having good insulation and high etching selectivity.
Step s4, forming a trench electrode lead-out terminal 6 as shown in fig. 5. In order to reduce the number of times the substrate is flipped back and forth during production, this step may be performed first when the electrode terminals of the trench electrodes are provided on the upper surface. It is of course not excluded to carry out the subsequent fabrication of the central electrode and then to form the trench electrode terminal. In addition, the trench electrode may be oxide capped prior to forming the electrode terminal 6 to balance substrate stress.
Next, step s5 is performed to etch a deep trench in the center of the substrate 1, which penetrates the substrate to the oxide film, and preferably an opening is provided in the lower surface, the effect of which is the same as that described in the above product.
In step s6, a central electrode 7 is formed in the deep trench. The specific procedure of this step can be referred to as steps s2a1 to s2a2 or steps s2b1 to s2b2, i.e. the central electrode 7 is formed in the trench, the surface of which is covered with an oxide layer 8 leaving a cavity 9 in the center, as shown in fig. 6.
In step s7, the central electrode tab 10 is formed, and as shown in fig. 7, the trench may be capped with oxide or unsealed before the tab is formed.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be made by those skilled in the art without departing from the scope of the disclosure, and such alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (5)
1. The preparation method of the three-dimensional trench electrode detector with the central electrode penetrating is characterized by comprising the following steps of:
providing a substrate;
an annular trench in an outer Zhou Keshi of the substrate;
forming an annular groove electrode in the annular groove;
covering oxide films on the upper surface and the lower surface of the substrate respectively;
etching a deep trench penetrating through the substrate to the oxide film in the center of the substrate, and forming a central electrode in the deep trench;
the opening of the annular groove is arranged on the upper surface of the substrate, and the opening of the deep groove is arranged on the lower surface of the substrate.
2. The method of manufacturing according to claim 1, wherein the method of forming the trench electrode comprises:
and performing ion implantation on the side wall of the annular groove, and covering the side wall and the bottom wall of the annular groove with an oxide layer to enable the annular groove to be filled with oxide or to leave a cavity.
3. The method of manufacturing according to claim 1, wherein the method of forming the trench electrode comprises: and filling in-situ doped polysilicon in the annular groove.
4. The method of preparing according to claim 1, further comprising, after forming the oxide film and before forming the deep trench: and forming a circuit leading-out end of the groove electrode on the upper surface of the substrate.
5. The method of manufacturing according to claim 4, further comprising: and forming a circuit leading-out end of the central electrode on the lower surface of the substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210224384.XA CN114899248B (en) | 2022-03-07 | 2022-03-07 | Three-dimensional trench electrode detector with central electrode penetrating through and preparation method thereof |
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| CN202210224384.XA CN114899248B (en) | 2022-03-07 | 2022-03-07 | Three-dimensional trench electrode detector with central electrode penetrating through and preparation method thereof |
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| CN114899248A CN114899248A (en) | 2022-08-12 |
| CN114899248B true CN114899248B (en) | 2024-04-16 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449801A (en) * | 2016-12-10 | 2017-02-22 | 湘潭大学 | Open-and-close type three-dimensional trench electrode silicon detector |
| CN109994454A (en) * | 2019-04-01 | 2019-07-09 | 李正 | Box-like three dimension detector of hexagon and preparation method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449801A (en) * | 2016-12-10 | 2017-02-22 | 湘潭大学 | Open-and-close type three-dimensional trench electrode silicon detector |
| CN109994454A (en) * | 2019-04-01 | 2019-07-09 | 李正 | Box-like three dimension detector of hexagon and preparation method thereof |
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