CN106449802B - The three-dimensional trench electrode silicon detector of variable center passive electrode - Google Patents
The three-dimensional trench electrode silicon detector of variable center passive electrode Download PDFInfo
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- CN106449802B CN106449802B CN201611162056.2A CN201611162056A CN106449802B CN 106449802 B CN106449802 B CN 106449802B CN 201611162056 A CN201611162056 A CN 201611162056A CN 106449802 B CN106449802 B CN 106449802B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 60
- 239000010703 silicon Substances 0.000 title claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 230000002093 peripheral effect Effects 0.000 claims abstract description 41
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 238000005452 bending Methods 0.000 claims abstract description 18
- 239000011159 matrix material Substances 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 46
- 229910052782 aluminium Inorganic materials 0.000 claims description 46
- 239000004411 aluminium Substances 0.000 claims description 43
- 238000003475 lamination Methods 0.000 claims description 40
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract description 14
- 230000005684 electric field Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001442589 Convoluta Species 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention discloses a kind of three-dimensional trench electrode silicon detector of variable center passive electrode, peripheral electrode is made of first straight line portion, second straight line portion and bending section, first straight line portion is parallel with second straight line portion, the end in first straight line portion and the end in second straight line portion are closed by bending section to be connected, long central electrode is located at the centre of peripheral electrode, long central electrode is parallel with first straight line portion, second straight line portion, and first straight line portion is identical with the length in second straight line portion；Have between peripheral electrode and long central electrode and isolate silicon body, be p-type silicon matrix below peripheral electrode, long central electrode, silicon dioxide layer of protection is coated with the bottom of p-type silicon matrix.The present invention's is simple and reasonable, and radiation resistance is strong, solves the non-uniform electric between positive and negative electrode in the prior art, and there are weak electric field area, the size of single detector unit structure influences greatly and so that the problem of volume is inconvenient to adjust radiation resistance.
Description
Technical field
The invention belongs to high-energy physics and astrophysics technical field, is related to a kind of three-dimensional ditch of variable center passive electrode
Groove electrode silicon detector.
Background technology
Detector is widely used in the technical fields such as high-energy physics, astrophysics, aerospace, military affairs, medicine, in high energy
Among physics and astrophysics, detector is under strong radiation parameter, therefore has strict requirements in itself to detector, it is desirable to its
With stronger Radiation hardness, and leakage current and total depletion voltage cannot be too big, also have difference for the size of its volume
Requirement.Traditional " three-dimensional trench electrode silicon detector " has many shortcomings：First, the electric field point between its positive and negative anodes
Cloth is simultaneously uneven, and electric field line is mostly curve, is not shortest straight line, and the movement of electronics in the electric field is along direction of an electric field
, and then cause the drift distance of electronics to increase, with the increase of electronics drift distance, the defects of producing energy level is radiated to electronics
Influence it is bigger, cause the decay of electric signal；Second, three-dimensional trench electrode silicon detector usually has weak electric field area, the speed of electronics
Degree is very little in weak electric field area, and in the time length of weak electric field area movement, under intense radiation conditions, electric signal can decay rapidly；
Third, the size variation of three-dimensional trench electrode silicon detector electrode spacing can influence its radiation resistance, single trench cell
Size radiation resistance is influenced it is big, so three-dimensional trench electrode silicon detector is when making array, detector cells structure
Size cannot be random increase, it has not been convenient to adjust, be so applied to generate significant limitation.
The content of the invention
In order to achieve the above object, the present invention provides a kind of three-dimensional trench electrode silicon detection of variable center passive electrode
Device, simple and reasonable, radiation resistance is strong, solves the non-uniform electric between positive and negative electrode in the prior art, exists
Weak electric field area, the size of single detector unit structure influence radiation resistance big and cause what volume was inconvenient to adjust to ask
Topic.
The technical solution adopted in the present invention is a kind of three-dimensional trench electrode silicon detector of variable center passive electrode,
Peripheral electrode is made of first straight line portion, second straight line portion and bending section, and first straight line portion is parallel with second straight line portion, and first is straight
The end in line portion and the end in second straight line portion are closed by bending section to be connected, and long central electrode is located at the centre of peripheral electrode,
Long central electrode is parallel with first straight line portion, second straight line portion, and first straight line portion is identical with the length in second straight line portion；Peripheral electricity
Have between pole and long central electrode and isolate silicon body, be p-type silicon matrix below peripheral electrode, long central electrode, in p-type silicon matrix
Bottom be coated with silicon dioxide layer of protection.
The present invention is further characterized in that further, the long central electrode connects anode, and peripheral electrode connects cathode；In length
Heart electrode is made of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination；Peripheral electricity
Pole is made of aluminium lamination and heavy doping phosphorus silicon layer, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination.
Further, the long central electrode connects cathode, and peripheral electrode connects anode；Long central electrode is by aluminium lamination and heavy doping
Phosphorus silicon layer is formed, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination；Peripheral electrode is by aluminium lamination and heavy doping borosilicate
Layer is formed, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination.
Further, the aluminum layer thickness is 1 μm, and heavy doping borosilicate layer thickness is 200 μm~500 μm, heavy doping phosphorus silicon
Layer thickness is 200 μm~500 μm.
Further, the width of the long central electrode is 10 μm, and the width of peripheral electrode is 10 μm.
Further, the bending section is semicircle, and the radius of bending section is equal to electrode spacing, and electrode spacing is no more than 50
μm。
Further, the isolation silicon body by silicon dioxide layer and is lightly doped borosilicate layer and forms, and silicon dioxide layer is positioned at most
Upper strata, thickness are 1 μm；Borosilicate layer is lightly doped and is located at silicon dioxide layer in the following, thickness is 200 μm~500 μm.
Further, for the p-type silicon matrix for borosilicate is lightly doped, its thickness is 20 μm~50 μm.
The beneficial effects of the invention are as follows：The present invention's is simple and reasonable, and radiation resistance is strong, detector cells structure
Long-pending increase, small on the influence of its radiation resistance, this, which means that, to be adjusted under conditions of its radiation resistance is not influenced
The structure size of detector is adjusted by length direction, there is very big adjustable space, and the practicality greatly enhances, and solves
The problem of traditional three-dimensional big minor adjustment of trench electrode silicon detector cellular construction is inconvenient；In addition, electrocardio in the length of the present invention
The size of pole changes with detector cells conformational volume change, solves traditional three-dimensional trench electrode silicon detector electric field
Skewness, the problem of causing electric signal to decay rapidly；What the peripheral electrode of the present invention was combined for cylinder with cuboid
Structure, avoids the problem that there are weak electric field.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is conventional three-dimensional trench electrode silicon detector structure diagram.
Fig. 2 is the structure diagram of the present invention.
Fig. 3 is the structure diagram of electrode silicon detector array of the present invention.
In figure, 1. central rod electrodes, 2. trench electrodes, 3. isolation silicon bodies, 4.p type silicon substrates, 5. silicon dioxide layer of protection,
6. long central electrode, 7. peripheral electrodes, 8. first straight line portions, 9. second straight line portions, 10. bending sections.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
Conventional three-dimensional trench electrode silicon detector structure, as shown in Figure 1, trench electrode 2 be surrounded on central rod electrode 1 it
Outside, have between trench electrode 2 and central rod electrode 1 and isolate silicon body 3, have p-type silicon base below trench electrode 2, central rod electrode 1
Body 4,1 μm of silicon dioxide layer of protection 5 is equipped with electrode silicon detector bottommost；Central rod electrode 1 connects anode, its radius is 5 μ
M, the superiors are 1 μm of aluminium, are 180 μm~450 μm of heavy doping borosilicate below aluminium lamination.Trench electrode 2 connects cathode, its width
10 μm, the superiors are 1 μm of aluminium, are 180 μm~450 μm of heavy doping phosphorus silicon below aluminium lamination.It is 1 μm to isolate 3 the superiors of Gui Ti
Silica, play a part of to separate positive and negative anodes, below silicon dioxide layer be 180 μm~450 μm and borosilicate is lightly doped.P-type silicon
For matrix 4 for borosilicate is lightly doped, its thickness is 20 μm~50 μm.
Embodiment 1,
The structure of the present invention, as Figure 2-3, peripheral electrode 7 is by first straight line portion 8, second straight line portion 9 and bending section 10
Form, first straight line portion 8 is parallel with second straight line portion 9, and the end in first straight line portion 8 and the end in second straight line portion 9 pass through curved
The closing connection of pars convoluta 10, bending section 10 are preferably semicircle；Long central electrode 6 is located at the centre of peripheral electrode 7, long central electrode
6 is parallel with first straight line portion 8, second straight line portion 9, has between peripheral electrode 7 and long central electrode 6 and isolates silicon body 3, peripheral electrode
7th, it is p-type silicon matrix 4 below long central electrode 6, silicon dioxide layer of protection 51 μm thick is coated with the bottom of p-type silicon matrix 4.
Long central electrode 6 connects anode, and peripheral electrode 7 connects cathode, can also long central electrode 6 connect cathode, peripheral electrode 7 connects
Anode；When long central electrode 6 connects anode, long central electrode 6 is made of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is positioned at most upper
Layer, heavy doping borosilicate layer are located at below aluminium lamination；When long central electrode 6 connects cathode, long central electrode 6 is by aluminium lamination and heavy doping phosphorus
Silicon layer is formed, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination.When peripheral electrode 7 connects cathode, peripheral electrode 7
It is made of aluminium lamination and heavy doping phosphorus silicon layer, aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination；Peripheral electrode 7 connects
During anode, peripheral electrode 7 is made of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at aluminium lamination
Below；Aluminum layer thickness is 1 μm.Wherein, heavy doping borosilicate layer, the thickness of heavy doping phosphorus silicon layer are 200 μm, according to detector
Depending on silicon wafer thickness (without considering aluminium lamination and the thickness of silicon dioxide layer of protection 5), heavy doping borosilicate layer thickness, heavy doping phosphorus silicon layer
Thickness is 9 with the ratio of detector silicon wafer thickness：10；The purpose so done is mainly two：First, ensure panel detector structure list
The closure of member, and then increase radiation resistance, second, etching completely, can make to penetrate silicon chip when etching in technique, it is single after penetrating
Member can be dropped out from silicon chip.Heavy doping borosilicate layer thickness that the two comprehensive factors are finally established, heavy doping phosphorus silicon layer thickness are equal
For 200 μm.Long central electrode 6, the width of peripheral electrode 7 are 10 μm, because the electrode width of detector is smaller, capacitance is got over
Small, the stability of detector is better, but minimum can only accomplish 10 μm in technique.Silicon dioxide layer of protection 5 has been mainly two works
With：Used first, protection is total, because it is above the matrix being lightly doped, so electric signal generation is had, it is directly outer with detector
Enclosing electronic equipment contact electric signal can change；Second, silica plays the role of heavily doped N-type silicon, PN sections are produced with base.It is right
As long as having for whole detector cells, so what need not be done is too thick, such that detector cells become too fat to move.
The superiors for isolating silicon body 3 are silica, are that borosilicate is lightly doped below silicon dioxide layer；The thickness of silica is 1 μm, with
The thickness of aluminium is identical, it is therefore an objective to and completely cut off positive and negative anodes to prevent short circuit, primarily serve and be connected with electrode, so need not be too
Thickness, it is too thick unfavorable to detector detectable signal because isolation detection two electrodes silica also can be thickening；Boron is lightly doped
The thickness of silicon is 200 μm, identical with the silicon of heavy doping, and PN is extended in this position；P-type silicon matrix 4 is that borosilicate, p-type silicon is lightly doped
4 thickness of matrix is 50 μm, prevents from cutting through silicon chip when etching in technique, numerical value by required silicon wafer thickness (without considering aluminium lamination with
The thickness of silicon dioxide layer of protection 5) determine, 4 thickness of p-type silicon matrix is 1 with silicon wafer thickness ratio：10.
Embodiment 2,
The structure of the present invention, except the thickness of heavy doping borosilicate layer, heavy doping phosphorus silicon layer is 500 μm, is lightly doped borosilicate
Thickness be 500 μm, 4 thickness of p-type silicon matrix be 20 μm beyond, remainder is same as Example 1.
Embodiment 3,
The structure of the present invention, except the thickness of heavy doping borosilicate layer, heavy doping phosphorus silicon layer is 270 μm, is lightly doped borosilicate
Thickness be 270 μm, 4 thickness of p-type silicon matrix be 30 μm beyond, remainder is same as Example 1.
When traditional three-dimensional trench electrode silicon detector is located at center in view of cathode, its breakdown voltage substantially reduces, and
The long central electrode 6 of the present invention is so that positive and negative anodes position difference, the influence relative reduction to breakdown voltage, and long central electrode
6 change, i.e. M with the change of peripheral electrode 7pWith MnMatch (Mn-Mp=2y), wherein MpRepresent the length of long central electrode 6,
MnRepresenting the length of peripheral electrode 7, y is the electrode spacing of first straight line portion 8, second straight line portion 9 and long central electrode 6, according to
The principle of uniform fully- depleted, x=y, x are bending section 10 and the electrode spacing of long central electrode 6, see Fig. 2；Long central electrode 6
Change in the longitudinal direction, and width is constant, peripheral electrode 7 can change on long and width.
As shown in figure 3, the three-dimensional trench electrode silicon detector array of variable center passive electrode, is by the detection in Fig. 2
Device cellular construction is mutually nested to be composed.
In technique, the present invention is similar with the etching technics of conventional three-dimensional trench electrode silicon detector, long central electrode 6,
Peripheral electrode 7 is etched by litho machine, and ion implanting forms.Etching is along the length direction of detector cells structure, head
First the first straight line portion 8 being parallel to each other (n+ lines), long central electrode 6 (p+ lines), second straight line portion 9 (n+ lines) are etched to come,
First straight line portion 8, long central electrode 6, the line width in second straight line portion 9 are 10 μm, its length can voluntarily be intended according to production requirement
Fixed (not influencing its radiation resistance), then bending section 10 is etched, bending section 10 is preferably semicircle, and 10 width of bending section is 10 μ
m；Long central electrode 6 is located at the centre of peripheral electrode 7, i.e., long central electrode 6 is respectively to first straight line portion 8, second straight line portion 9
Apart from identical, the distance in long central electrode 6 to first straight line portion 8 or second straight line portion 9 is known as electrode spacing, and the half of bending section 10
Footpath is equal to electrode spacing, meets Mn-Mp=2y, and x=y；Electrode spacing is no more than 50 μm (can voluntarily be drafted according to production).
The peripheral electrode 7 for forming each two detector cells of electrode silicon detector array of the present invention has lap, carves
It is set to be staggered with previous row as far as possible during erosion, as shown in Figure 3.Long central electrode 6, the etching of peripheral electrode 7 are all incomplete
, 30 μm or so of p-type silicon matrix 4 is finally reserved, the bottommost of the electrode silicon detector plates the dioxy that a layer thickness is 1 μm
SiClx protective layer 5, the thickness of silicon dioxide layer of protection 5 can adjust but cannot be too thick.
It should be noted that herein, term " comprising ", "comprising" or its any other variant are intended to non-row
His property includes, so that process, method, article or equipment including a series of elements not only include those key elements, and
And other elements that are not explicitly listed are further included, or further include as this process, method, article or equipment institute inherently
Key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that including institute
State in process, method, article or the equipment of key element that also there are other identical element.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the scope of the present invention.It is all
Any modification, equivalent replacement, improvement and so within the spirit and principles in the present invention, are all contained in protection scope of the present invention
It is interior.
Claims (1)
1. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode, it is characterised in that peripheral electrode (7) is by first
Line part (8), second straight line portion (9) and bending section (10) are formed, and first straight line portion (8) are parallel with second straight line portion (9), and first
The end of line part (8) and the end of second straight line portion (9) are closed by bending section (10) to be connected, and long central electrode (6) is located at
The centre of peripheral electrode (7), long central electrode (6) is parallel with first straight line portion (8), second straight line portion (9), first straight line portion
(8) it is identical with the length of second straight line portion (9)；Have between peripheral electrode (7) and long central electrode (6) and isolate silicon body (3), periphery
It is p-type silicon matrix (4) below electrode (7), long central electrode (6), silica guarantor is coated with the bottom of p-type silicon matrix (4)
Sheath (5)；
The long central electrode (6) connects anode, and peripheral electrode (7) connects cathode；Long central electrode (6) is by aluminium lamination and heavy doping borosilicate
Layer is formed, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination；Peripheral electrode (7) is by aluminium lamination and heavy doping phosphorus silicon
Layer is formed, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination；
Or the long central electrode (6) connects cathode, peripheral electrode (7) connects anode；Long central electrode (6) is by aluminium lamination and heavy doping
Phosphorus silicon layer is formed, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination；Peripheral electrode (7) is by aluminium lamination and heavy doping
Borosilicate layer is formed, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination；
The aluminum layer thickness is 1 μm, and heavy doping borosilicate layer thickness is 200 μm~500 μm, and heavy doping phosphorus silicon layer thickness is 200 μm
~500 μm；
The width of the long central electrode (6) is 10 μm, and the width of peripheral electrode (7) is 10 μm；
The bending section (10) is semicircle, and the radius of bending section (10) is equal to electrode spacing, and electrode spacing is no more than 50 μm；
The isolation silicon body (3) is by silicon dioxide layer and borosilicate layer is lightly doped forms, and silicon dioxide layer is located at the superiors, and thickness is
1μm；Borosilicate layer is lightly doped and is located at silicon dioxide layer in the following, thickness is 200 μm~500 μm；
For the p-type silicon matrix (4) for borosilicate is lightly doped, its thickness is 20 μm~50 μm；
The thickness of the silicon dioxide layer of protection (5) is 1 μm.
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| CN107342335B (en) * | 2017-08-09 | 2018-11-02 | 湘潭大学 | Long honeycomb core-shell electrode three dimension detector |
| CN108321218A (en) * | 2018-03-20 | 2018-07-24 | 湘潭大学 | A kind of three-dimensional parallel-plate electrode semiconductor detector |
| CN109994455B (en) * | 2019-04-01 | 2024-05-03 | 湘潭大学 | One-dimensional arrangement double-sided misplaced three-dimensional detector, preparation method thereof and array |
| CN110611009B (en) * | 2019-09-06 | 2021-02-02 | 湘潭大学 | Nested three-dimensional groove electrode silicon detector |
| CN113659018B (en) * | 2021-08-16 | 2024-01-26 | 中国科学院微电子研究所 | Detector |
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| WO2011049832A2 (en) * | 2009-10-19 | 2011-04-28 | Brookhaven Science Associates, Llc | 3d-trench electrode detectors |
| CN205666239U (en) * | 2016-04-26 | 2016-10-26 | 湘潭大学 | Novel closed type shell mould electrode silicon detector |
| CN205542844U (en) * | 2016-04-26 | 2016-08-31 | 湘潭大学 | Closed type shell mould electrode silicon detector |
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