CN206340555U - The three-dimensional trench electrode silicon detector of variable center passive electrode - Google Patents
The three-dimensional trench electrode silicon detector of variable center passive electrode Download PDFInfo
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Abstract
The utility model discloses a kind of three-dimensional trench electrode silicon detector of variable center passive electrode, peripheral electrode is made up of first straight line portion, second straight line portion and bending section, first straight line portion is parallel with second straight line portion, the end in first straight line portion and the end in second straight line portion are closed by bending section to be connected, the centre of the long peripherally located electrode of central electrode, long central electrode is parallel with first straight line portion, second straight line portion, and first straight line portion is identical with the length in second straight line portion；Have between peripheral electrode and long central electrode and isolate silicon body, be p-type silicon matrix below peripheral electrode, long central electrode, silicon dioxide layer of protection is coated with the bottom of p-type silicon matrix.It is of the present utility model simple and reasonable, radiation resistance is strong, the non-uniform electric between positive and negative electrode in the prior art is solved, there is weak electric field area, the size of single detector unit structure influences big on radiation resistance and causes the problem of volume is inconvenient to adjust.
Description
Technical field
The utility model belongs to high-energy physics and astrophysics technical field, is related to the three of a kind of variable center passive electrode
Tie up trench electrode silicon detector.
Background technology
Detector is widely used in the technical fields such as high-energy physics, astrophysics, Aero-Space, military affairs, medical science, in high energy
Among physics and astrophysics, detector is under strong radiation parameter, therefore has strict requirements in itself to detector, it is desirable to its
With stronger Radiation hardness, and leakage current and total depletion voltage can not be too big, also have difference for the size of its volume
Requirement.Traditional " three-dimensional trench electrode silicon detector " has many weak points：First, the electric field point between its both positive and negative polarity
Cloth is simultaneously uneven, and electric field line is mostly curve, is not most short straight line, and the motion of electronics in the electric field is along direction of an electric field
, and then cause the drift distance of electronics to increase, with the increase of electronics drift distance, the defect level produced is radiated to electronics
Influence it is bigger, cause the decay of electric signal；Second, three-dimensional trench electrode silicon detector usually has weak electric field area, the speed of electronics
Degree is very little in weak electric field area, and long in the time that weak electric field area is moved, under intense radiation conditions, electric signal can decay rapidly；
Third, the size variation of three-dimensional trench electrode silicon detector electrode spacing can influence its radiation resistance, single trench cell
Size influences big to radiation resistance, so three-dimensional trench electrode silicon detector is when making array, detector cells structure
Size can not be random increase, it has not been convenient to adjust, be so applied to generate significant limitation.
Utility model content
In order to achieve the above object, the utility model provides a kind of three-dimensional trench electrode silicon of variable center passive electrode and visited
Device is surveyed, simple and reasonable, radiation resistance is strong, solves the non-uniform electric between positive and negative electrode in the prior art, deposits
In weak electric field area, the size of single detector unit structure influences big on radiation resistance and make it that what volume was inconvenient to adjust asks
Topic.
The technical scheme that the utility model is used is that a kind of three-dimensional trench electrode silicon of variable center passive electrode is detected
Device, peripheral electrode is made up of first straight line portion, second straight line portion and bending section, and first straight line portion is parallel with second straight line portion, the
The end of one line part and the end in second straight line portion are closed by bending section to be connected, in the long peripherally located electrode of central electrode
Between, long central electrode is parallel with first straight line portion, second straight line portion, and first straight line portion is identical with the length in second straight line portion；Outside
Have between confining electrode and long central electrode and isolate silicon body, be p-type silicon matrix below peripheral electrode, long central electrode, in p-type silicon
The bottom of matrix is coated with silicon dioxide layer of protection.
Of the present utility model to be further characterized in that, further, the long central electrode connects negative pole, and peripheral electrode connects positive pole；
Long central electrode is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination；Outside
Confining electrode is made up of aluminium lamination and heavy doping phosphorus silicon layer, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination.
Further, the long central electrode connects positive pole, and peripheral electrode connects negative pole；Long central electrode is by aluminium lamination and heavy doping
Phosphorus silicon layer is constituted, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination；Peripheral electrode is by aluminium lamination and heavy doping borosilicate
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination.
Further, the aluminum layer thickness is 1 μm, and heavy doping boron silicon layer thickness is 200 μm~500 μm, heavy doping phosphorus silicon
Thickness degree is 200 μm~500 μm.
Further, the width of the long central electrode is 10 μm, and the width of peripheral electrode is 10 μm.
Further, the bending section is semicircle, and the radius of bending section is equal to electrode spacing, and electrode spacing is no more than 50
μm。
Further, the isolation silicon body is made up of silicon dioxide layer with borosilicate layer is lightly doped, and silicon dioxide layer is located at most
Upper strata, thickness is 1 μm；Borosilicate layer is lightly doped to be located at below silicon dioxide layer, thickness is 200 μm~500 μm.
Further, is borosilicate is lightly doped in the p-type silicon matrix, and its thickness is 20 μm~50 μm.
The beneficial effects of the utility model are：Of the present utility model simple and reasonable, radiation resistance is strong, detector list
The increase of meta structure volume, influences small, this, which means that, not to influence the bar of its radiation resistance to its radiation resistance
Under part, the structure size of regulation detector is adjusted by length direction, has very big adjustable space, its practicality increases greatly
By force, the problem of big minor adjustment of traditional three-dimensional trench electrode silicon detector cellular construction is inconvenient is solved；In addition, this practicality is new
The size of the long central electrode of type changes with detector cells conformational volume change, solves traditional three-dimensional trench electrode
Silicon detector non-uniform electric, causes the problem of electric signal can decay rapidly；Peripheral electrode of the present utility model is cylinder
The structure being combined with cuboid, it is to avoid the problem of there is weak electric field.
Brief description of the drawings
, below will be to embodiment in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art
Or the accompanying drawing to be used needed for description of the prior art is briefly described, it should be apparent that, drawings in the following description are only
It is some embodiments of the present utility model, for those of ordinary skill in the art, is not paying the premise of creative work
Under, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is conventional three-dimensional trench electrode silicon detector structural representation.
Fig. 2 is structural representation of the present utility model.
Fig. 3 is the structural representation of the utility model electrode silicon detector array.
In figure, 1. central rod electrodes, 2. trench electrodes, 3. isolation silicon bodies, 4.p type silicon substrates, 5. silicon dioxide layer of protection,
6. long central electrode, 7. peripheral electrodes, 8. first straight line portions, 9. second straight line portions, 10. bending sections.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belongs to the scope of the utility model protection.
Conventional three-dimensional trench electrode silicon detector structure, as shown in figure 1, trench electrode 2 be surrounded on central rod electrode 1 it
Outside, have between trench electrode 2 and central rod electrode 1 and isolate silicon body 3, have p-type silicon base below trench electrode 2, central rod electrode 1
Body 4,1 μm of silicon dioxide layer of protection 5 is provided with electrode silicon detector bottommost；Central rod electrode 1 connects negative pole, and its radius is 5 μ
M, it is 180 μm~450 μm of heavy doping borosilicate below 1 μm of aluminium, aluminium lamination that the superiors, which are,.Trench electrode 2 connects positive pole, its width
10 μm, it is 180 μm~450 μm of heavy doping phosphorus silicon below 1 μm of aluminium, aluminium lamination that the superiors, which are,.It is 1 μm to isolate the superiors of Gui Ti 3
Silica, plaing a part of to separate below both positive and negative polarity, silicon dioxide layer is 180 μm~450 μm borosilicate is lightly doped.P-type silicon
Is borosilicate is lightly doped in matrix 4, and its thickness is 20 μm~50 μm.
Embodiment 1,
Structure of the present utility model, as Figure 2-3, peripheral electrode 7 is by first straight line portion 8, second straight line portion 9 and bending
Portion 10 is constituted, and first straight line portion 8 is parallel with second straight line portion 9, and the end in first straight line portion 8 and the end in second straight line portion 9 are logical
The closing connection of bending section 10 is crossed, bending section 10 is preferably semicircle；The centre of the long peripherally located electrode 7 of central electrode 6, long center
Electrode 6 is parallel with first straight line portion 8, second straight line portion 9, has between peripheral electrode 7 and long central electrode 6 and isolates silicon body 3, periphery
It is p-type silicon matrix 4 below electrode 7, long central electrode 6, thick 1 μm silica protection is coated with the bottom of p-type silicon matrix 4
Layer 5.
Long central electrode 6 connects negative pole, and peripheral electrode 7 connects positive pole, can also long central electrode 6 connect positive pole, peripheral electrode 7 connects
Negative pole；When long central electrode 6 connects negative pole, long central electrode 6 is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at most upper
Layer, heavy doping borosilicate layer is located at below aluminium lamination；When long central electrode 6 connects positive pole, long central electrode 6 is by aluminium lamination and heavy doping phosphorus
Silicon layer is constituted, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination.When peripheral electrode 7 connects positive pole, peripheral electrode 7
It is made up of aluminium lamination and heavy doping phosphorus silicon layer, aluminium lamination is located at the superiors, heavy doping phosphorus silicon layer is located at below aluminium lamination；Peripheral electrode 7 connects
During negative pole, peripheral electrode 7 is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at aluminium lamination
Below；Aluminum layer thickness is 1 μm.Wherein, heavy doping borosilicate layer, the thickness of heavy doping phosphorus silicon layer are 200 μm, according to detector
Depending on silicon wafer thickness (thickness for not considering aluminium lamination and silicon dioxide layer of protection 5), heavy doping boron silicon layer thickness, heavy doping phosphorus silicon layer
Thickness is 9 with the ratio of detector silicon wafer thickness：10；The purpose so done is mainly two：One, it is ensured that panel detector structure list
The closure of member, and then increase radiation resistance, second, etching completely, it can make to penetrate silicon chip when etching in technique, it is single after penetrating
Member can be dropped out from silicon chip.Heavy doping boron silicon layer thickness that the two comprehensive factors are finally established, heavy doping phosphorus silicon layer thickness are equal
For 200 μm.Long central electrode 6, the width of peripheral electrode 7 are 10 μm, because the electrode width of detector is smaller, electric capacity is got over
Small, the stability of detector is better, but minimum can only accomplish 10 μm in technique.Silicon dioxide layer of protection 5 has been mainly two works
With：Used first, protection is total, because it is above the matrix being lightly doped, so electric signal generation is had, it is directly outer with detector
Enclosing electronic equipment contact electric signal can change；Second, silica plays the role of heavily doped N-type silicon, PN sections are produced with base.It is right
As long as having for whole detector cells, so what need not be done is too thick, such that detector cells become too fat to move.
It below silica, silicon dioxide layer is that borosilicate is lightly doped that the superiors of isolation silicon body 3, which are,；The thickness of silica is 1 μm, with
The thickness of aluminium is identical, it is therefore an objective to completely cuts off both positive and negative polarity to prevent short circuit, primarily serves and be connected with electrode, so need not be too
Thickness, it is too thick unfavorable to detector detectable signal because isolation detection two electrodes silica also can be thickening；Boron is lightly doped
The thickness of silicon is 200 μm, identical with the silicon of heavy doping, and PN extends in this position；P-type silicon matrix 4 is that borosilicate, p-type silicon is lightly doped
The thickness of matrix 4 is 50 μm, prevents from cutting through silicon chip when etching in technique, numerical value by required silicon wafer thickness (do not consider aluminium lamination with
The thickness of silicon dioxide layer of protection 5) determined, the thickness of p-type silicon matrix 4 is 1 with silicon wafer thickness ratio：10.
Embodiment 2,
Structure of the present utility model, except the thickness of heavy doping borosilicate layer, heavy doping phosphorus silicon layer is 500 μm, is lightly doped
The thickness of borosilicate is 500 μm, and the thickness of p-type silicon matrix 4 is that remainder is same as Example 1 beyond 20 μm.
Embodiment 3,
Structure of the present utility model, except the thickness of heavy doping borosilicate layer, heavy doping phosphorus silicon layer is 270 μm, is lightly doped
The thickness of borosilicate is 270 μm, and the thickness of p-type silicon matrix 4 is that remainder is same as Example 1 beyond 30 μm.
When traditional three-dimensional trench electrode silicon detector considers that positive pole is located at center, its breakdown voltage is substantially reduced, and
Long central electrode 6 of the present utility model make it that both positive and negative polarity position is different, the influence relative reduction to breakdown voltage, and long center
Electrode 6 changes, i.e. M with the change of peripheral electrode 7pWith MnMatch (Mn-Mp=2y), wherein MpRepresent long central electrode 6
Length, MnThe length of peripheral electrode 7 is represented, y is the electrode spacing of first straight line portion 8, second straight line portion 9 and long central electrode 6,
According to the principle of uniform fully- depleted, x=y, x is bending section 10 and the electrode spacing of long central electrode 6, sees Fig. 2；Long central electrode
6 change in the longitudinal direction, and width is constant, and peripheral electrode 7 can change on long and width.
As shown in figure 3, the three-dimensional trench electrode silicon detector array of variable center passive electrode, is by the detection in Fig. 2
Device cellular construction is mutually nested to be combined.
In technique, the utility model is similar with the etching technics of conventional three-dimensional trench electrode silicon detector, electrocardio in length
Pole 6, peripheral electrode 7 are etched by litho machine, and ion implanting is formed.Etching is along the length side of detector cells structure
To first by the first straight line portion 8 being parallel to each other (n+ lines), long central electrode 6 (p+ lines), second straight line portion 9 (n+ lines) etching
Out, first straight line portion 8, long central electrode 6, the line width in second straight line portion 9 are 10 μm, and its length can be according to production requirement certainly
Row is drafted and (is not influenceed its radiation resistance), then etches bending section 10, and bending section 10 is preferably semicircle, and the width of bending section 10 is
10μm；The centre of the long peripherally located electrode 7 of central electrode 6, i.e., long central electrode 6 is respectively to first straight line portion 8, second straight line portion
9 distance is identical, and long central electrode 6 to the distance in first straight line portion 8 or second straight line portion 9 is referred to as electrode spacing, bending section 10
Radius be equal to electrode spacing, meet Mn-Mp=2y, and x=y；Electrode spacing (can voluntarily be intended no more than 50 μm according to production
It is fixed).
Constituting the peripheral electrode 7 of each two detector cells of the utility model electrode silicon detector array has overlapping portion
Point, being tried one's best during etching makes it be staggered with previous row, as shown in Figure 3.Long central electrode 6, the etching of peripheral electrode 7 are all not
Completely, 30 μm or so of p-type silicon matrix 4 is finally reserved, it is 1 μm that the bottommost of the electrode silicon detector, which plates a layer thickness,
Silicon dioxide layer of protection 5, the thickness of silicon dioxide layer of protection 5 is adjustable but can not be too thick.
It should be noted that herein, term " comprising ", "comprising" or its any other variant are intended to non-row
His property is included, so that process, method, article or equipment including a series of key elements not only include those key elements, and
And also including other key elements being not expressly set out, or also include for this process, method, article or equipment institute inherently
Key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that including institute
Also there is other identical element in process, method, article or the equipment of stating key element.
Preferred embodiment of the present utility model is the foregoing is only, protection model of the present utility model is not intended to limit
Enclose.All any modifications, equivalent substitutions and improvements made within spirit of the present utility model and principle etc., are all contained in this reality
With in new protection domain.
Claims (9)
1. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode, it is characterised in that peripheral electrode (7) is by first
Line part (8), second straight line portion (9) and bending section (10) are constituted, and first straight line portion (8) are parallel with second straight line portion (9), and first
The end of line part (8) and the end of second straight line portion (9) are closed by bending section (10) to be connected, and long central electrode (6) is located at
The centre of peripheral electrode (7), long central electrode (6) is parallel with first straight line portion (8), second straight line portion (9), first straight line portion
(8) it is identical with the length of second straight line portion (9)；Have between peripheral electrode (7) and long central electrode (6) and isolate silicon body (3), periphery
It is p-type silicon matrix (4) below electrode (7), long central electrode (6), silica guarantor is coated with the bottom of p-type silicon matrix (4)
Sheath (5).
2. a kind of three-dimensional trench electrode silicon detector of variable center passive electrode according to claim 1, its feature exists
In the long central electrode (6) connects negative pole, and peripheral electrode (7) connects positive pole；Long central electrode (6) is by aluminium lamination and heavy doping borosilicate
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination；Peripheral electrode (7) is by aluminium lamination and heavy doping phosphorus silicon
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination.
3. a kind of three-dimensional trench electrode silicon detector of variable center passive electrode according to claim 1, its feature exists
In the long central electrode (6) connects positive pole, and peripheral electrode (7) connects negative pole；Long central electrode (6) is by aluminium lamination and heavy doping phosphorus silicon
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination；Peripheral electrode (7) is by aluminium lamination and heavy doping borosilicate
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination.
4. a kind of three-dimensional trench electrode silicon detector of variable center passive electrode according to Claims 2 or 3, its feature
It is that the aluminum layer thickness is 1 μm, heavy doping boron silicon layer thickness is 200 μm~500 μm, and heavy doping phosphorus silicon layer thickness is 200 μm
~500 μm.
5. a kind of three-dimensional trench electrode silicon detector of variable center passive electrode according to claim 1, its feature exists
In the width of the long central electrode (6) is 10 μm, and the width of peripheral electrode (7) is 10 μm.
6. a kind of three-dimensional trench electrode silicon detector of variable center passive electrode according to claim 1, its feature exists
In the bending section (10) is semicircle, and the radius of bending section (10) is equal to electrode spacing, and electrode spacing is no more than 50 μm.
7. a kind of three-dimensional trench electrode silicon detector of variable center passive electrode according to claim 1, its feature exists
In the isolation silicon body (3) is made up of silicon dioxide layer with borosilicate layer is lightly doped, and silicon dioxide layer is located at the superiors, and thickness is 1
μm；Borosilicate layer is lightly doped to be located at below silicon dioxide layer, thickness is 200 μm~500 μm.
8. a kind of three-dimensional trench electrode silicon detector of variable center passive electrode according to claim 1, its feature exists
In is borosilicate is lightly doped in the p-type silicon matrix (4), and its thickness is 20 μm~50 μm.
9. a kind of three-dimensional trench electrode silicon detector of variable center passive electrode according to claim 1, its feature exists
In the thickness of the silicon dioxide layer of protection (5) is 1 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621379168.9U CN206340555U (en) | 2016-12-15 | 2016-12-15 | The three-dimensional trench electrode silicon detector of variable center passive electrode |
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| CN201621379168.9U CN206340555U (en) | 2016-12-15 | 2016-12-15 | The three-dimensional trench electrode silicon detector of variable center passive electrode |
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