CN216209942U - Silicon three-dimensional groove electrode detector - Google Patents
Silicon three-dimensional groove electrode detector Download PDFInfo
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- CN216209942U CN216209942U CN202122667267.4U CN202122667267U CN216209942U CN 216209942 U CN216209942 U CN 216209942U CN 202122667267 U CN202122667267 U CN 202122667267U CN 216209942 U CN216209942 U CN 216209942U
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Abstract
The utility model discloses a silicon three-dimensional groove electrode detector, which structurally comprises a silicon dioxide protective layer, wherein a silicon substrate and a peripheral electrode are sequentially arranged on the silicon dioxide protective layer, the peripheral electrode is in a hollow straight hexagonal prism shape, the silicon substrate comprises a substrate part and a nesting part, the cross section of the substrate part is the same as that of the silicon dioxide protective layer, the cross section of one half of the nesting part is the same as that of the silicon dioxide protective layer, the other half of the nesting part is in a half waist circle shape and is embedded in the peripheral electrode, a central electrode is also arranged in the peripheral electrode, and an isolation silicon body is filled between the peripheral electrode and the central electrode as well as between the peripheral electrode and the nesting part; the utility model has the advantages of uniform internal potential distribution, short response time, improved charge collection efficiency and radiation resistance.
Description
Technical Field
The utility model belongs to the technical field of high-energy physics and celestial body physics, and relates to a silicon three-dimensional groove electrode detector.
Background
Based on research and design of researchers on detectors, types of silicon detectors tend to be diversified gradually, existing silicon detectors can be divided into two-dimensional silicon detectors and three-dimensional silicon detectors according to process methods, the two-dimensional silicon detectors based on two-dimensional planes comprise silicon microstrip detectors, silicon pixel detectors and silicon drift detectors, and the silicon microstrip detectors and the silicon pixel detectors have excellent position resolution and poor radiation resistance; the silicon drift detector has excellent energy resolution due to small area of the collecting anode, but does not have position resolution due to the complexity of the structural design, and the design difficulty is large; the three-dimensional silicon detector based on the three-dimensional deep etching process comprises a three-dimensional columnar electrode silicon detector and a three-dimensional groove electrode silicon detector, compared with a two-dimensional silicon detector, the silicon detector penetrates through a wafer by adopting the deep etching process, epitaxial growth is combined with a particle injection technology, the electrode spacing is effectively separated from the thickness of the wafer, a heavily-doped N-type or P-type columnar electrode is formed, and the anti-irradiation performance of the silicon detector is greatly improved; however, due to the limitation of the preparation process, the trench electrode cannot penetrate through and be etched on the outer side of the isolation silicon body, and the silicon substrate with the thickness of 30-50 μm is mostly arranged at the bottom of the trench electrode, so that the dead area in the detector is large, and the charge collection efficiency, the radiation resistance and the like are low.
SUMMERY OF THE UTILITY MODEL
In order to achieve the above object, the present invention provides a silicon three-dimensional trench electrode detector, wherein the size of the substrate at the bottom is small, so that the dead zone area is small, the potential distribution inside the detector is uniform, the response time is short, and the charge collection efficiency and the radiation resistance are improved.
The silicon three-dimensional groove electrode detector comprises a silicon dioxide protective layer with a hexagonal cross section, wherein a silicon substrate and a peripheral electrode are sequentially arranged on the silicon dioxide protective layer, the peripheral electrode is in a hollow straight hexagonal prism shape, the silicon substrate comprises a substrate part and a nesting part, the substrate part is arranged between the silicon dioxide protective layer and the peripheral electrode, the cross section size of the substrate part and the cross section size of the peripheral electrode are consistent with the cross section size of the silicon dioxide protective layer, the cross section size of one half of the nesting part is consistent with the cross section of the peripheral electrode, and the cross section of the other half of the nesting part is a half of a waist circle and is embedded in the peripheral electrode;
a central electrode is further arranged on the silicon dioxide protective layer in the peripheral electrode, isolation silicon bodies are filled between the peripheral electrode and the central electrode and between the peripheral electrode and the nesting part, and the heights of the isolation silicon bodies, the central electrode and the peripheral electrode are consistent;
the top of the central electrode and the top of the peripheral electrode are both provided with aluminum layers, the two aluminum layers are both provided with electrode contact ports, and the top of the isolation silicon body is provided with a silicon dioxide protective layer.
Furthermore, the heights of the isolation silicon body, the central electrode and the peripheral electrode are all 300 microns, the height of the base body part is 10 microns, the height of the nested part is 20 microns, and the thicknesses of the aluminum layer and the silicon dioxide protective layer are all 1 micron;
the thicknesses of the peripheral electrode and the central electrode are both 10 micrometers, the length of the cross section of the central electrode is 117 micrometers, and the thickness of the isolation silicon body is 50 micrometers.
Further, the isolation silicon body is P-type lightly doped borosilicate, the peripheral electrode is N-type heavily doped phosphosilicate, the central electrode is P-type heavily doped borosilicate, the base body is P-type lightly doped borosilicate, and the nested part is N-type heavily doped phosphosilicate.
Further, the doping concentration of the isolation silicon body is 1014cm-3The doping concentrations of the peripheral electrode, the central electrode and the nested part are all 1018～5×1019cm-3。
The utility model has the beneficial effects that: according to the utility model, the nested part is arranged on the base body part to support the peripheral electrode, so that the collapse of the peripheral electrode caused by process limitation is avoided, the height of the base body part is reduced, the area of a dead zone is further reduced, the internal potential of the detector is uniformly distributed, the response time is shortened, and the charge collection efficiency, the radiation resistance and the sensitivity of the detector are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Fig. 2 is a structural side view of an embodiment of the present invention.
Fig. 3 is a structural array diagram of an embodiment of the present invention.
Fig. 4 is a potential distribution diagram of an embodiment of the present invention.
In the figure, 1 is an isolated silicon body, 2 is a central electrode, 3 is a peripheral electrode, 4 is a nesting part, 5 is a silicon dioxide protective layer, 6 is a substrate part, and 7 is an aluminum layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Examples
As shown in fig. 3, the silicon three-dimensional trench electrode detector is formed by splicing a plurality of detector unit arrays, as shown in fig. 1 and fig. 2, each detector unit comprises a silicon dioxide protective layer 5 with a hexagonal cross section, a silicon substrate and a hollow straight hexagonal prism-shaped peripheral electrode 3 are sequentially arranged on the silicon dioxide protective layer 5, the silicon substrate comprises a substrate part 6 and a nesting part 4, the substrate part 6 is arranged between the silicon dioxide protective layer 5 and the peripheral electrode 3, the cross section of the substrate part 6 is the same as that of the silicon dioxide protective layer 5, the nesting part 4 is embedded in the peripheral electrode 2, one half of the cross section of the nesting part is the same as that of the silicon dioxide protective layer 5, the other half of the cross section of the nesting part is a kidney-round shape, a central electrode 2 is further arranged on the silicon dioxide protective layer 5 at the inner side of the peripheral electrode 3, the cross section of the central electrode 2 is a kidney-round shape, and isolation silicon bodies 1 are filled between the central electrode 2 and the peripheral electrode 3 and the nesting part 4 and the peripheral electrode 3, the top of the peripheral electrode 3 and the top of the central electrode 2 are both provided with aluminum layers 7, two aluminum layers 7 are both provided with electrode contact ports, and the top of the isolation silicon body 1 is provided with a silicon dioxide protective layer 5.
The isolation silicon body 1 is P-type lightly doped borosilicate with a doping concentration of 1014cm-3The peripheral electrode 3 is N-type heavily doped phosphorus-silicon, the central electrode 2 is P-type heavily doped borosilicate, the substrate part 6 of the silicon substrate is P-type lightly doped borosilicate, namely a semiconductor material obtained by adding a small amount of 3-valent boron into a 4-valent silicon material as an impurity, the nested part 4 is N-type heavily doped phosphorus-silicon, and the doping concentrations of the peripheral electrode 3, the central electrode 2 and the nested part 4 are all 1018～5×1019cm-3。
The thickness of the silicon dioxide protective layer 5 and the aluminum layer is 1 μm, the height of the isolated silicon body 1, the height of the peripheral electrode 3 and the height of the central electrode 2 are 300 μm, the width of the peripheral electrode 3 and the width of the central electrode 2 are 10 μm, the length of the cross section of the central electrode is 117 μm, the thickness of the isolated silicon body 1 is 50 μm, the thickness of the base body part 6 of the silicon body is 10 μm, and the thickness of the nesting part 4 is 20 μm.
Wherein the doping concentration N of the isolating silicon body 1doAnd the thickness determination process is as follows:
Setting NdoAre each 1012cm-3、5*1012cm-3、1013cm-3、5*1013cm-3、1014cm-3、5*1014cm-3、1015cm-3Detecting the corresponding radiation reversal flux under each value
The results are shown in Table 1：
TABLE 1 doping concentration N of the isolated silicon bodiesdoFlux reversal from irradiation
In relation to (2)
From Table 1, the doping concentration N of the isolation silicon body 1 can be seendoFlux reversal from irradiation
Proportional, the relationship between the two is as follows:
wherein
Beta is 0.028, when the doping concentration of the isolation silicon body is NdoFrom 1012cm-3Increased to 1015cm-3Time, radiation reversed flux
From 1.141X 1013neq/cm2Increased to 1.141 × 1016neq/cm2Comprehensively considering NdoThe doping concentration N of the isolating silicon body 1 is selecteddoIs 1014cm-3At this time, the radiation reversed flux
Is 1.1401X 1015neq/cm2。
Due to the full depletion voltage VfdAnd λxThe following relationships exist:
wherein N isdoFor isolating the doping concentration of the silicon body 1, the value is 1014cm-3E is a mathematical constant, ε is the relative permittivity of silicon, ε is 11.90Is the dielectric constant in vacuum.
Solving lambda according to the Poisson equation, the boundary conditions and the continuity of the electric field and the electric potentialxLength l of central electrodep+Has a relation of 2 λx＜lp+From this, λ is obtainedxThe maximum value is 191 μm, and the distance between the long side of the central electrode and the peripheral electrode is adjustedxDetecting each lambdaxCorresponding full depletion voltage VfdThe results are shown in Table 2:
TABLE 2Nd0Get 1014Relationship between time electrode spacing and full depletion voltage
| λx(μm) | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 191 |
| Vfd(V) | 68 | 121 | 189 | 272 | 370 | 483 | 612 | 755 | 2755 |
From the above formula, λ is knownxAnd VfdIs in direct proportion, and determines lambda to ensure that the value range of the full depletion voltage is less than 200VxTaken to be 30 μm to 50 μm, and lambdaxThe larger the value of (A), the larger the detection area of the detector is, the larger the area for receiving radiation is, which is beneficial to the improvement of the performance of the detector, so that the lambda is enabledxThe thickness of 50 μm is suitable, and the radiation resistance is enhanced.
The utility model is limited by the preparation process of the detector, the maximum depth which can be achieved by the peripheral electrode 3 at present is 80% -90% of the height of the detector, which causes the large dead zone area of the detector, the uneven distribution of internal potential, the poor charge collection efficiency, the low radiation resistance and the low sensitivity, the utility model prevents the collapse of the peripheral electrode 3 caused by the process limitation by arranging the nested part 4 on the substrate part 6 of the silicon substrate and supporting the peripheral electrode 3 by utilizing the nested part 4, so that the peripheral electrode 3 has deeper etching depth and can coat the periphery of the whole isolation silicon body 1, the thickness of the silicon substrate of the detector is reduced, the dead zone area is reduced, the internal potential of the detector is distributed evenly, and the charge collection efficiency, the radiation resistance and the high sensitivity are improved.
When the height of the nested part 4 is reduced, the peripheral electrode 3 cannot be supported, so that the detector structure is unstable, the outer electrode 3 is easy to collapse when penetrating and etching, the height of the nested part 4 is increased, sensitive areas in the detector can be correspondingly reduced, dead areas in the detector are increased, potential distribution in the detector is uneven, carriers generated by incident particles are captured by energy level defects, the energy of incident particle transfer media is reduced, the number of collected charges is reduced, and signal processing is not facilitated.
Fig. 3 is an array diagram of an embodiment of the present invention, and it can be known from comparing the array diagram of the existing detector that the dead zone area of the structural array of the embodiment of the present invention is much smaller than the dead zone area of the structural array of the quadrilateral silicon three-dimensional trench electrode detector, and the calculation result is as follows: the quadrilateral array dead zone area can be expressed as: 4 × 1/4 × 4 ═ 4 unit cells, assuming a radius of nested portion 4 of R, the dead zone of a single detector can be found: 4R2-πR2≈0.86R2Then the dead area of the array formed by splicing four detector units is 4 x 0.86R2＝3.44R2(ii) a The area of the dead zone of the array in the embodiment of the utility model is expressed as follows: 3 × 1/6 × 6 ═ 3 unit cells, and assuming the radius of the arc-shaped cross-section of the nesting part 4 is R, the dead space of a single detector can be obtained:
the dead area of the array formed by splicing four detector units is 3 × 0.054R2＝0.161R2(ii) a The calculation result shows that the dead zone area of the detector is greatly reduced through the structural optimization of the detector, the charge collection efficiency of the detector is greatly improved due to the characteristic, and the radiation resistance is effectively enhanced.
According to the utility model, the wafer is penetrated through by a deep etching process, the epitaxial growth and ion implantation technology are combined to generate the heavily doped central electrode 2, the distance between the central electrode 2 and the peripheral electrode 3 is separated from the thickness of the wafer, the irradiation resistance of the detector is greatly improved, and the detector can be normally used even under the condition of displacement damage of the detector; meanwhile, the central electrode 2 and the peripheral electrode 3 are arranged in parallel, so that the drift distance and the drift time of electrons are shortened, and the charge collection efficiency is effectively improved.
The detector of the embodiment of the utility model is simulated, and the potential distribution diagram is determined to be shown in fig. 4, and it can be known from fig. 4 that the potential distribution inside the detector is uniform, the defects in the detector are fewer, the collection efficiency of charges is improved, and the sensitivity and the radiation resistance of the detector are improved.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (2)
1. The silicon three-dimensional groove electrode detector is characterized by comprising a silicon dioxide protective layer (5) with a hexagonal cross section, wherein a silicon substrate and a peripheral electrode (3) are sequentially arranged on the silicon dioxide protective layer (5), the peripheral electrode (3) is in a hollow straight hexagonal prism shape, the silicon substrate comprises a substrate part (6) and a nested part (4), the substrate part (6) is arranged between the silicon dioxide protective layer (5) and the peripheral electrode (3), the cross section size of the substrate part and the cross section size of the peripheral electrode (3) are consistent with the cross section size of the silicon dioxide protective layer (5), one half of the cross section of the nested part (4) is consistent with the cross section of the peripheral electrode (3), and the other half of the cross section is in a waist circle shape and is embedded in the peripheral electrode (3);
a central electrode (2) is arranged on a silicon dioxide protective layer (5) in the peripheral electrode (3), isolation silicon bodies (1) are filled between the peripheral electrode (3) and the central electrode (2) and between the peripheral electrode (3) and the nesting part (4), and the heights of the isolation silicon bodies (1), the central electrode (2) and the peripheral electrode (3) are consistent;
the top of the central electrode (2) and the top of the peripheral electrode (3) are both provided with aluminum layers (7), two aluminum layers (7) are both provided with electrode contact ports, and the top of the isolation silicon body (1) is provided with a silicon dioxide protective layer (5).
2. The silicon three-dimensional trench electrode detector as claimed in claim 1, wherein the height of the isolated silicon body (1), the height of the central electrode (2) and the height of the peripheral electrode (3) are all 300 μm, the height of the base portion (6) is 10 μm, the height of the nesting portion (4) is 20 μm, and the thickness of the aluminum layer (7) and the thickness of the silicon dioxide protective layer (5) are all 1 μm;
the thicknesses of the peripheral electrode (3) and the central electrode (2) are both 10 micrometers, the length of the cross section of the central electrode (2) is 117 micrometers, and the thickness of the isolation silicon body (1) is 50 micrometers.
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