CN111129180A - Silicon drift detector based on strip-shaped central collecting electrode - Google Patents
Silicon drift detector based on strip-shaped central collecting electrode Download PDFInfo
- Publication number
- CN111129180A CN111129180A CN202010036330.1A CN202010036330A CN111129180A CN 111129180 A CN111129180 A CN 111129180A CN 202010036330 A CN202010036330 A CN 202010036330A CN 111129180 A CN111129180 A CN 111129180A
- Authority
- CN
- China
- Prior art keywords
- waist
- ring
- strip
- shaped cathode
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 55
- 239000010703 silicon Substances 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 230000001681 protective effect Effects 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 10
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000009827 uniform distribution Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
Abstract
The invention discloses a silicon drift detector based on a strip-shaped central collecting electrode, which comprises a columnar substrate with a waist-round cross section, wherein the middle of the top of the substrate is provided with the waist-round central collecting electrode; the internal potential electric field of the invention has more uniform distribution, higher energy resolution and position resolution, and the radiation resistance of the silicon detector unit and the surface utilization rate of the substrate are improved.
Description
Technical Field
The invention belongs to the technical field of silicon drift detectors, and relates to a silicon drift detector based on a strip-shaped central collecting electrode.
Background
The detector has various types including a scintillator detector, a gas detector, a three-dimensional groove detector, a silicon drift detector and the like, and each type of detector is applied to different technical fields due to the unique performance of the detector; the silicon drift detector has the advantages of small output capacitance, small electronic noise, high signal-to-noise ratio, good energy resolution and the like, and is widely applied to the fields of high-energy physics, celestial body physics, X-ray detection, medicine and the like.
However, the electric field distribution of the current hexagonal silicon drift detector is not uniform enough, the circular silicon drift detector has good energy resolution although the electric field distribution is uniform, but the position resolution is poor, when the circular silicon drift detector units form an array, the dead zone area is large, and the silicon drift detector prepared by the current production technology has a small size, so that the utilization rate of the substrate is not high.
Disclosure of Invention
In order to achieve the purpose, the invention provides a silicon drift detector based on a strip-shaped central collecting electrode, so that the electric field distribution in the silicon detector is uniform, the energy resolution and the position resolution are better, the dead zone area is smaller when an array is formed, and the substrate utilization rate is higher.
The silicon drift detector comprises a columnar substrate with a waist-round cross section, wherein a central collecting electrode with a waist-round cross section is arranged in the middle of the top surface of the substrate, a plurality of waist-round cathode rings are arranged on the top surface of the substrate around the central collecting electrode, a protective ring is arranged on the top surface of the substrate outside each waist-round cathode ring, the parallel section of the central collecting electrode, the parallel section of each waist-round cathode ring, the parallel section of each protective ring and the parallel section of the top surface of the substrate are parallel and have the same length, the semi-circles at the two ends of each waist-round cathode ring and the semi-circles at the two ends of the central collecting electrode, the protective rings and the top surface of the substrate are concentric, and the distances among the central collecting electrode, the waist-round cathode rings and the protective rings are;
strip cathodes are arranged between the parallel sections of the waist-shaped cathode rings on the top surface of the substrate and between the parallel sections of the waist-shaped cathode rings and the parallel section of the central collecting electrode, and the length of each strip cathode is the same as that of the parallel section of each waist-shaped cathode ring;
the bottom surface of the substrate is also provided with a waist-shaped cathode ring and a protective ring, a strip-shaped cathode is arranged between parallel sections of the waist-shaped cathode ring, and the positions of the waist-shaped cathode ring, the strip-shaped cathode and the protective ring on the bottom surface of the substrate are the same as the positions of the waist-shaped cathode ring, the strip-shaped cathode and the protective ring on the top surface of the substrate;
aluminum electrode layers are attached to the central collecting electrode, the waist-shaped cathode ring, the strip-shaped cathode and the protective ring, an aluminum dioxide insulating layer is fixed on a substrate among the central collecting electrode, the waist-shaped cathode ring, the strip-shaped cathode and the protective ring, and the aluminum dioxide insulating layer and the aluminum electrode layer are flush.
Further, the substrate is n-type silicon lightly doped with phosphorus, and the doping concentration of the substrate is 1x1012cm-3(ii) a The central collector electrode is made of heavily phosphorus-doped n-type silicon with a doping concentration of 1x1019cm-3(ii) a The doping types of the waist-shaped cathode ring and the strip-shaped cathode are the same, and the waist-shaped cathode ring and the strip-shaped cathode are both heavily-doped boron p-type silicon with the doping concentration of 1x1018cm-3。
Further, the height of the substrate is 300 μm, the doping thicknesses of the central collecting electrode, the waist-shaped cathode ring, the strip-shaped cathode and the protective ring are all 1 μm, the thickness of the aluminum electrode layer is 1 μm, the width of the parallel section of the central collecting electrode is 60 μm, the ring width of the waist-shaped cathode ring is 60 μm, the width of the strip-shaped cathode is 5 μm, and the distances between the waist-shaped cathode ring and the central collecting electrode, between the waist-shaped cathode rings and between the waist-shaped cathode ring and the protective ring are all 30 μm.
Further, the external voltages on the waist-shaped cathode ring and the strip-shaped cathode of the silicon drift detector satisfy the following conditions:
where Ψ (r) denotes the voltage distribution of the top surface of the substrate, VbRepresents the voltage applied to the first ring waist-shaped cathode ring from inside to outside on the bottom surface of the substrate, gamma is a coefficient, phi (r) represents the voltage distribution of the bottom surface of the substrate, VfdAnd V (R) represents the depletion voltage of the silicon detector, V (R) represents the voltage applied to the last ring of the kidney-shaped cathode ring from inside to outside on the top surface of the substrate, and the voltage applied to the strip-shaped cathode is half of the sum of the voltages applied to the kidney-shaped cathode rings at two sides of the strip-shaped cathode.
Further, the coefficient γ is 0.3.
The invention has the beneficial effects that: the invention combines the waist-circle cathode ring and the strip cathode, has larger effective area, simultaneously makes the potential electric field in the silicon detector more uniform, and has higher energy resolution and position resolution.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a block diagram of an embodiment of the present invention.
Fig. 2 is a top view of an embodiment of the present invention.
Fig. 3 is a cross-sectional view a-a of an embodiment of the present invention.
Fig. 4 is a cross-sectional view B-B of an embodiment of the present invention.
Fig. 5 is an array diagram of an embodiment of the invention.
FIG. 6 is a diagram illustrating the effect of the embodiment of the present invention.
In the figure, 1 is a substrate, 2 is a central collecting electrode, 3 is a strip cathode, 4 is a waist circular cathode ring, and 5 is a protective ring.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the silicon drift detector based on the strip-shaped central collecting electrode comprises a substrate 1, wherein the substrate 1 is a columnar structure with a cross section in a waist-round shape, a central collecting electrode 2 with a cross section in a waist-round shape is arranged in the middle of the top surface of the substrate 1, a plurality of waist-round cathode rings 4 are arranged on the top surface of the substrate 1 around the central collecting electrode 2, a waist-round protective ring 5 is arranged on the top surface of the substrate 1 outside the waist-round cathode rings 4, the parallel section of the central collecting electrode 2, the parallel section of the waist-round cathode rings 4 and the parallel section of the protective ring 5 are parallel to the parallel section of the top surface of the substrate 1 and have the same length, and the semicircles at two ends of the protective ring 5 are concentric with the semicircle; as shown in fig. 2, strip cathodes 3 are arranged between the parallel sections of the waist-shaped cathode rings 4 and the parallel sections of the central collecting electrode 2, and between the parallel sections of the waist-shaped cathode rings 4, the length of the strip cathodes 3 is the same as that of the parallel sections of the central collecting electrode 2, and the distances between the waist-shaped cathode rings 4 and the central collecting electrode 2, between the waist-shaped cathode rings 4, and between the waist-shaped cathode rings 4 and the protective rings 5 are the same; as shown in fig. 3 and 4, the bottom surface of the substrate 1 is provided with a waist-shaped cathode ring 4 and a protection ring 5, a strip-shaped cathode 3 is arranged between parallel sections of the waist-shaped cathode ring 4 on the bottom surface of the substrate 1, and the positions of the waist-shaped cathode ring 4, the protection ring 5 and the strip-shaped cathode 3 on the bottom surface of the substrate 1 are the same as the positions thereof on the top surface of the substrate 1; aluminum electrode layers are fixed on the central collecting electrode 2, the waist-shaped cathode ring 4, the strip-shaped cathode 3 and the protective ring 5, an aluminum dioxide insulating layer is arranged between the aluminum electrode layers, and the aluminum electrode layers are as high as the aluminum dioxide insulating layer.
The substrate 1 is n-type silicon lightly doped with phosphorus, and the doping concentration of the substrate 1 is 1x1012cm-3The doping concentration of the matrix 1 is increased, so that the number of freely movable electrons and holes in the matrix 1 is increased, the concentration of net current carriers is increased, and the depletion difficulty of the matrix 1 is increased; on the contrary, the doping concentration of the matrix 1 is reduced, so that the depletion voltage of the matrix 1 is reduced, and the conductivity is weakened; the doping concentration of the substrate 1 provided by the invention ensures that the substrate 1 is easy to exhaust, the concentration of carriers generated during exhaustion is high enough, and silicon probeThe conductivity of the detector is better; the central collecting electrode 2 is heavily phosphorus-doped n-type silicon with a doping concentration of 1x1019cm-3The doping types of the waist-shaped cathode ring 4 and the strip-shaped cathode 3 are the same, and are p-type silicon heavily doped with boron, and the doping concentration is 1x1018cm-3。
The height of the substrate 1 is 300 mu m, the doping thicknesses of the central collecting electrode 2, the waist-shaped cathode ring 4, the strip-shaped cathode 3 and the guard ring 5 are all 1 mu m, the thickness of the aluminum electrode layer is 1 mu m, the width between the parallel sections of the central collecting electrode 2 is 60 mu m, the ring width of the waist-shaped cathode ring 4 is 60 mu m, and the width of the strip-shaped cathode 3 is 5 mu m; the distance between the waist-shaped cathode rings 4 is 30 μm, a transverse drift electric field exists between the electrodes under the action of an external voltage, the distance between the electrodes is too small, and the leakage current between the electrodes is increased, so that the noise in the silicon detector is increased, the signal-to-noise ratio is reduced, and the reading of an incident particle current signal is not facilitated; the distance between the electrodes is too large, so that the intensity of transverse drift electric field between the electrodes is reduced, the charge collection performance of the silicon detector is reduced, and the energy resolution is reduced.
The proper voltage is applied to the silicon detector, the front surface and the back surface of the silicon detector can be prevented from reaching depletion voltage at the same time and being broken down, the leakage current between the electrodes is small, the drift velocity of electron holes is high, the charge collection capability of the silicon detector can be improved, in order to shorten the drift path of incident particles, the electric field component from the central collection electrode 2 of the silicon detector to the protection ring 5 is set as a constant, and then the external voltage on each cathode should satisfy the following relation:
where Ψ (r) denotes the voltage distribution, V, of the top surface of the substrate 1bRepresents the voltage applied to the first ring waist-shaped cathode ring 4 from inside to outside on the bottom surface of the substrate 1, gamma represents the coefficient related to the drift path of the incident particles, and phi (r) tableShowing the voltage distribution, V, of the bottom surface of the substrate 1fdThe depletion voltage of the silicon detector is shown, v (r) shows the voltage applied to the last ring of the kidney-shaped cathode ring 4 from inside to outside on the top surface of the substrate 1, the voltage applied to the strip-shaped cathode 3 is half of the sum of the voltages applied to the kidney-shaped cathode rings 4 on both sides of the strip-shaped cathode 3, when gamma is 0.3, the drift path of the incident particles in the silicon detector is approximately a straight line, and the charge collection efficiency of the silicon detector is better at the moment.
The silicon drift detector based on the strip-shaped central collecting electrode is characterized in that the central collecting electrode 2 is arranged into a strip shape, the waist-shaped cathode ring 4 is arranged around the central collecting electrode 2, and the strip-shaped cathode 3 is arranged between the waist-shaped cathode ring 4 and the central collecting electrode 2 as well as between the waist-shaped cathode ring 4 and the waist-shaped cathode ring 4, so that the electric field distribution in the silicon detector is more uniform, the current signal reading of incident particles is facilitated, and the energy resolution and the position resolution of the silicon detector are improved; the embodiment of the invention can also properly adjust the length of the parallel section of the waist-round structure in the silicon detector, reduce the drift path of incident particles in the silicon detector and improve the radiation resistance of the silicon detector; as shown in fig. 5, when the silicon detector units are formed into an array according to the embodiment of the present invention, the adjacent silicon detector units can share the parallel sections of the substrate 1 and the guard ring 5, so that the dead area is reduced, and the utilization rate of the silicon substrate is improved.
The current signal generated at the central collecting electrode 2 by the incident particles is detected by using the incident particles incident on the embodiment of the present invention, and the incident particles are set as follows: the incidence direction of the heavy particles is set as (0, -1), the incidence position is set as (300,301), the incidence time is set as 2.0e-11, the incidence depth is set as [ 00.001300300.01 ], the radius of the action range is set as [ 1111 ], the linear energy conversion value is set as [ 01.282 e-51.282 e-50 ], the spatial distribution is Gaussian distribution, the detection result is shown in FIG. 6, the abscissa in FIG. 6 represents the incidence time of the particles, the ordinate represents the current detected by the central collecting electrode 2, it can be known from FIG. 6 that the peak value of the current generated by the incident particles at the central collecting electrode 2 reaches more than 2 x10 < -6 >, the current signal detected by the embodiment of the invention is good, the duration time of the current signal is short, and no long tail exists, which shows that the electric field distribution of the internal potential of the three-dimensional silicon detector is more uniform, the signal-to-noise ratio is higher, the response time, the energy resolution and the position resolution for the incident particles are high.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (5)
1. A silicon drift detector based on a strip-shaped central collecting electrode is characterized by comprising a columnar matrix (1) with a cross section in a waist-round shape, the middle of the top surface of the substrate (1) is provided with a central collecting electrode (2) with a waist-round cross section, the top surface of the substrate (1) around the central collecting electrode (2) is provided with a plurality of waist-round cathode rings (4), the top surface of the substrate (1) outside the waist-round cathode rings (4) is provided with a protection ring (5), the parallel section of the central collecting electrode (2), the parallel section of the waist-round cathode rings (4), the parallel section of the protection ring (5) and the parallel section of the top surface of the substrate (1) are parallel and have the same length, the semi-circles at the two ends of the waist-round cathode rings (4) are concentric with the semi-circles at the two ends of the central collecting electrode (2), the protection ring (5) and the two ends of the top surface of the substrate (1), and the distances among the central collecting electrode (2), the waist;
strip cathodes (3) are arranged between the parallel sections of the waist-shaped cathode rings (4) on the top surface of the substrate (1), between the parallel sections of the waist-shaped cathode rings (4) and the parallel section of the central collecting electrode (2), and the length of each strip cathode (3) is the same as that of the parallel section of each waist-shaped cathode ring (4);
the bottom surface of the base body (1) is also provided with a waist-round cathode ring (4) and a protection ring (5), a strip-shaped cathode (3) is arranged between parallel sections of the waist-round cathode ring (4), and the positions of the waist-round cathode ring (4), the strip-shaped cathode (3) and the protection ring (5) on the bottom surface of the base body (1) are the same as the positions of the waist-round cathode ring (4), the strip-shaped cathode (3) and the protection ring (5) on the top;
aluminum electrode layers are attached to the central collecting electrode (2), the waist-shaped cathode ring (4), the strip-shaped cathode (3) and the protective ring (5), an aluminum dioxide insulating layer is fixed on the substrate (1) among the central collecting electrode (2), the waist-shaped cathode ring (4), the strip-shaped cathode (3) and the protective ring (5), and the aluminum dioxide insulating layer and the aluminum electrode layers are flush.
2. Silicon drift detector based on strip-shaped central collecting electrodes according to claim 1, characterized in that the substrate (1) is n-type silicon lightly doped with phosphorus, the doping concentration of the substrate (1) being 1x1012cm-3(ii) a The central collecting electrode (2) is heavily-doped phosphorus n-type silicon with the doping concentration of 1x1019cm-3(ii) a The doping types of the waist-circular cathode ring (4) and the strip-shaped cathode (3) are the same, and the waist-circular cathode ring and the strip-shaped cathode are both heavily doped boron p-type silicon with the doping concentration of 1x1018cm-3。
3. The silicon drift detector based on the strip-shaped central collecting electrode according to claim 1, wherein the height of the substrate (1) is 300 μm, the doping thicknesses of the central collecting electrode (2), the waist-shaped cathode ring (4), the strip-shaped cathode (3) and the guard ring (5) are all 1 μm, the thickness of the aluminum electrode layer is 1 μm, the width of the parallel section of the central collecting electrode (2) is 60 μm, the ring width of the waist-shaped cathode ring (4) is 60 μm, the width of the strip-shaped cathode (3) is 5 μm, and the distances between the waist-shaped cathode ring (4) and the central collecting electrode (2), between the waist-shaped cathode rings (4) and between the waist-shaped cathode ring (4) and the guard ring (5) are all 30 μm.
4. The silicon drift detector based on strip-shaped central collecting electrodes according to claim 1, characterized in that the external voltages on the kidney-shaped cathode ring (4) and the strip-shaped cathode (3) of the silicon drift detector satisfy the following conditions:
where Ψ (r) denotes the voltage distribution, V, of the top surface of the substrate (1)bShows that the bottom surface of the substrate (1) is from inside to outside, the first ring waist-shaped cathode ring (4) is arranged on the upper part and the outer partApplied voltage, gamma is a coefficient, phi (r) represents the voltage distribution of the bottom surface of the substrate (1), VfdThe depletion voltage of the silicon detector is shown, V (R) shows the voltage applied to the last ring of the kidney-shaped cathode ring (4) from inside to outside on the top surface of the substrate (1), and the voltage applied to the strip-shaped cathode (3) is half of the sum of the voltages applied to the kidney-shaped cathode rings (4) on the two sides of the strip-shaped cathode (3).
5. The strip-shaped central collecting electrode-based silicon drift detector according to claim 4, wherein the coefficient γ is 0.3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010036330.1A CN111129180A (en) | 2020-01-14 | 2020-01-14 | Silicon drift detector based on strip-shaped central collecting electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010036330.1A CN111129180A (en) | 2020-01-14 | 2020-01-14 | Silicon drift detector based on strip-shaped central collecting electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111129180A true CN111129180A (en) | 2020-05-08 |
Family
ID=70489336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010036330.1A Pending CN111129180A (en) | 2020-01-14 | 2020-01-14 | Silicon drift detector based on strip-shaped central collecting electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111129180A (en) |
-
2020
- 2020-01-14 CN CN202010036330.1A patent/CN111129180A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6002134A (en) | Cross-strip semiconductor detector with cord-wood construction | |
| EP2762924B1 (en) | Radiation detectors | |
| CN111354747A (en) | Silicon drift detector based on divider resistor and floating electrode and design method thereof | |
| CN113206166A (en) | Trench type silicon carbide neutron detector based on double conversion layers | |
| CN205450297U (en) | Slow neutron conversion body and slow neutron detector | |
| CN112071945A (en) | Spiral ring electrode silicon array detector | |
| CN114063137A (en) | Perovskite p-i-n junction-based gamma ray detection structure and correction method | |
| CN111969069A (en) | Multi-pixel ultra-small capacitance X-ray detection unit and detector | |
| CN211062728U (en) | Silicon drift detector based on strip-shaped central collecting electrode | |
| CN111129180A (en) | Silicon drift detector based on strip-shaped central collecting electrode | |
| CN110085701B (en) | Semiconductor neutron detector for nuclear radiation detection | |
| CN115826031A (en) | High-purity germanium drift detector | |
| CN216563149U (en) | Three-dimensional epitaxial injection hexagonal electrode silicon detector | |
| CN216161750U (en) | Spiral linear silicon drift detector | |
| US20060033029A1 (en) | Low-voltage, solid-state, ionizing-radiation detector | |
| CN111863848A (en) | Silicon pixel detector based on floating electrode and design method thereof | |
| CN114005893A (en) | Three-dimensional epitaxial injection hexagonal electrode silicon detector | |
| CN115020531B (en) | Silicon drift detector | |
| CN216209942U (en) | Silicon three-dimensional groove electrode detector | |
| CN212257400U (en) | Silicon pixel detector based on floating electrode | |
| CN206057590U (en) | Slow neutron detection device | |
| CN113658962B (en) | Detector, manufacturing method and device thereof | |
| CN209675300U (en) | Spherical box-like three dimension detector | |
| CN211858655U (en) | Silicon drift detector based on voltage-dividing resistor and floating electrode | |
| CN212542438U (en) | Fan-shaped alternating silicon pixel detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |