CN216161750U - Spiral linear silicon drift detector - Google Patents

Spiral linear silicon drift detector Download PDF

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CN216161750U
CN216161750U CN202122153516.8U CN202122153516U CN216161750U CN 216161750 U CN216161750 U CN 216161750U CN 202122153516 U CN202122153516 U CN 202122153516U CN 216161750 U CN216161750 U CN 216161750U
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cathode
silicon
silicon substrate
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李正
熊波
龙涛
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Hunan Maitanxin Semiconductor Technology Co ltd
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Abstract

The utility model discloses a spiral linear silicon drift detector, which comprises a cuboid-shaped silicon substrate, wherein collecting anodes are arranged at two opposite edges of the top surface of the silicon substrate, chain-shaped front drift cathodes are arranged between the collecting anodes, the front drift cathodes are distributed on the silicon substrate in an S shape, a back drift cathode is arranged at the bottom of the silicon substrate, aluminum layers are attached to the back drift cathode and the collecting anodes, silicon dioxide layers are arranged on the top of the silicon substrate and the front drift cathode, and the silicon dioxide layers at two ends of the front drift cathode and in the middle are etched off and attached to the silicon substrate; the utility model can automatically divide the voltage, is convenient to use, has larger effective detection area and better charge collection efficiency, energy resolution and sensitivity.

Description

Spiral linear silicon drift detector
Technical Field
The utility model belongs to the technical field of radiation detection, and relates to a spiral linear silicon drift detector.
Background
The rapid development and application of new semiconductor detectors have promoted the development of high-energy physics, in which not only the energy spectrum of incident particles but also the trajectories of the particles are detected in a large number of measurements, this requires the detector to have a better position resolution, which is mostly achieved by using a pixel detector, a trimming detector and a semiconductor drift detector at the present stage, the linear silicon drift detector shown in fig. 1 is one of the semiconductor drift detectors, p + cathode drift electrodes are generated on two sides of an N-type silicon substrate through ion implantation, an N + collecting anode is manufactured on the edge of a detector, different voltages are applied to each P + cathode drift electrode through a divider resistor chain to form a potential gradient, therefore, electrons can drift to the collecting anode along the horizontal direction, and the position information of incident particles is detected by detecting the drift time of carriers.
However, in the existing linear silicon drift detector, the P + cathode drift electrodes cannot be subjected to independent voltage division, a resistance chain needs to be arranged to independently pressurize each P + cathode drift electrode, an electric field in an electronic drift channel is related to surface electric field distribution, and the existing linear silicon drift detector is difficult to realize optimization of electronic drift through the voltage division resistance chain.
SUMMERY OF THE UTILITY MODEL
In order to achieve the above object, the present invention provides a spiral linear silicon drift detector, which can autonomously divide voltage, is convenient to use, has an increased effective detection area, and improves charge collection efficiency and energy resolution.
The technical scheme includes that the spiral linear silicon drift detector comprises a cuboid-shaped silicon substrate, collecting anodes are arranged at two opposite edges of the top surface of the silicon substrate, chain-shaped front drift cathodes are arranged between the collecting anodes, the front drift cathodes are distributed on the top surface of the silicon substrate in an S-shaped mode, reverse drift cathodes are arranged at the bottom of the silicon substrate, aluminum layers are attached to the collecting anodes and the reverse drift cathodes, silicon dioxide layers are attached to the top surface of the silicon substrate and the top surface of the front drift cathodes, and the silicon dioxide layers at two ends of the front drift cathodes and in the middle of the front drift cathodes are etched off and attached to the aluminum layers.
Furthermore, the collecting anode is a strip electrode or a plurality of block electrodes arranged at equal intervals.
Furthermore, the back side drifting cathode is a sheet electrode or a chain electrode with the same structure as the front side drifting cathode.
Furthermore, the width of the front drifting cathode is gradually increased from the middle to two sides, and the distance between the adjacent front drifting cathodes is a constant value or is gradually increased from the middle to two ends.
Furthermore, the silicon substrate is N-type high-resistance silicon with the doping concentration of 4 multiplied by 1011cm-3～2×1012cm-3The collecting anode is N-type heavily doped silicon, the front drifting cathode and the back drifting cathode are P-type heavily doped silicon, and the doping concentrations of the collecting anode, the front drifting cathode and the back drifting cathode are all 1016cm-3～1020cm-3。
The design method of the spiral linear silicon drift detector specifically comprises the following steps:
step 1, calculating an electric field Edr of a particle drift channel in the detector by using a formula (1.1), and further determining the front surface potential of the detector
Figure BDA0003250318540000021
And a front electric field e (y);
Figure BDA0003250318540000022
wherein VfdThe total depletion voltage of the detector is represented, l represents half of the length of the silicon substrate, y1 represents the vertical distance from the end part of the front drifting cathode to the collecting anode, gamma represents a back surface potential adjusting parameter, gamma is more than or equal to 0 and less than or equal to 1, phi (y1),Φ (l) represents a value of Φ (y) when y is y1 and y is l, respectively, and the calculation of Φ (y) is as shown in formula (1.2);
Figure BDA0003250318540000023
when y is y1
Figure BDA0003250318540000024
For applying a positive bias voltage V across the front drift cathodeelWhen y is equal to l
Figure BDA0003250318540000025
For applying a negative bias voltage V in the middle of the front drift cathodeoutWill Vel、VoutRespectively substituting the values into a formula (1.2) to obtain values of phi (y1) and phi (l), and substituting phi (y1) and phi (l) into a formula (1.1) to obtain a value of Edr;
and is also provided with
Figure BDA0003250318540000026
Wherein c is a constant number, such that
Figure BDA0003250318540000027
Calculating to obtain phi (y), and substituting phi (y) into formula (1.2) to obtain front potential
Figure BDA0003250318540000028
Front electric field
Figure BDA0003250318540000029
Step 2, determining the surface electric field and the electric potential distribution of the silicon substrate (4);
|VB|≤Vfd
Figure BDA00032503185400000210
wherein VBDenotes a constant potential, VoutRepresents a negative bias applied in the middle of the front drift cathode;
step 3, determining the width of the front drifting cathode and the distance between adjacent front drifting cathode strips;
defining the voltage drop between adjacent cathode bars of the front drift cathode as V, which is calculated as shown in equation (1.3):
Figure BDA00032503185400000211
sheet resistance of front-side drift cathodesLet w (y) be β p (y)
Figure BDA0003250318540000031
Wherein I represents the current flowing through the front drift cathode, I is 10 muA-50 muA,. v.R represents the increment of the resistance value between two points on the front drift cathode, ρ represents the resistivity of the front drift cathode, t represents the thickness of the front drift cathode, L represents the width of the detector, W (y) represents the width of the front drift cathode, P (y) (+ W (y)), G (y) represents the distance between adjacent front drift cathode strips, β represents a parameter related to the width of the front drift cathode, and 1 ≧ β ≧ 0.6.
In step 3, the distance G (y) between adjacent front-side drift cathode strips is set to be a fixed constant G, and w (y) is calculated as follows:
Figure BDA0003250318540000032
the utility model has the beneficial effects that: according to the embodiment of the utility model, the front drift cathode is designed into a chain shape and is distributed on the surface of the silicon substrate in an S shape, and voltages are applied to two ends and the middle of the front drift cathode, so that the front drift cathode can automatically divide the voltage, the voltage division by using a voltage dividing resistor chain is avoided, and the front drift cathode is more convenient to use; the voltage values at two ends of the front drifting cathode are increased by adjusting the width and the spacing interval of the front drifting cathode, the drifting electric field of the detector is improved and uniformly distributed, the drifting time of incident particles is shortened, electrons can be smoothly captured by the collecting anode as much as possible, and the charge collecting efficiency and the energy resolution are improved; according to the embodiment of the utility model, the front drift cathode and the collecting anode are symmetrically distributed on the silicon substrate, so that the effective detection area of the detector is increased, and the sensitivity of the detector is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a three-dimensional view of a prior art silicon drift detector.
Fig. 2 is a perspective view of the embodiment of the present invention.
Fig. 3 is a partial cross-sectional view of an embodiment of the utility model.
FIG. 4 is a top view of an embodiment of the present invention.
Fig. 5 is a top view of another embodiment of the present invention.
In the figure, 1 is a collecting anode, 2 is a front drift cathode, 3 is a back drift cathode, 4 is a silicon substrate, 5 is a silicon dioxide layer, and 6 is an aluminum layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The spiral linear silicon drift detector structure is shown in fig. 2 and fig. 3, and comprises a rectangular silicon substrate 4, wherein collecting anodes 1 are arranged at two opposite edges of the top surface of the silicon substrate 4, chain-shaped front drift cathodes 2 are arranged between the collecting anodes 1, the front drift cathodes 2 are arranged on the top surface of the silicon substrate 4 in an S-shaped manner, reverse drift cathodes 3 are arranged on the bottom surface of the silicon substrate 4, aluminum layers 6 are attached to the collecting anodes 1 and the reverse drift cathodes 3, silicon substrates 4 around the collecting anodes 1 and the front drift cathodes 2 are both attached with silicon dioxide layers 5, the silicon dioxide layers 5 in the middle of the front drift cathodes 2 and at two ends are etched, and the aluminum layers 6 are attached to the silicon substrates 4.
As shown in fig. 4 and 5, the collecting anode 1 is a strip electrode or a plurality of equally spaced block electrodes having the same length as the width of the silicon substrate 4, the strip electrode can be used to realize one-dimensional position resolution, the block electrode can be used to realize two-dimensional position resolution, the reverse drifting cathode 3 is a fully covered sheet electrode or an S-shaped chain electrode, and the chain electrode can be used to increase the voltage value at the outermost end, thereby increasing the drifting electric field in the detector, reducing the carrier recombination caused by radiation environment, enabling as many electrons as possible to be collected by the collecting anode 1 smoothly, and further increasing the charge collecting efficiency; when the reverse side drift cathode 3 is a sheet electrode, a negative bias voltage V is applied to one corner of the reverse side drift cathodebThe structure design and the manufacture are simple, the voltage application is convenient, and when the back drifting cathode 3 is a chain electrode, the negative bias voltage is applied in the middle
Figure BDA0003250318540000041
Applying a positive bias across
Figure BDA0003250318540000042
The silicon substrate 4 is N-type high-resistance silicon with the doping concentration of 4 multiplied by 1011cm-3～2×1012cm-3The doping concentration of the silicon substrate 4 is increased, so that the full depletion voltage required by depletion of the silicon substrate is increased, a higher negative bias needs to be applied to improve the drift electric field, and the upper limit of the negative bias is correspondingly reduced when the doping concentration is reduced, so that the drift electric field is reduced, the drift time of electrons is increased, and the charge collection efficiency is reduced; the collecting anode 1 is N-type heavily doped silicon, the front drifting cathode 2 and the back drifting cathode 3 are both P-type heavily doped silicon, and the doping concentrations of the collecting anode 1, the front drifting cathode 2 and the back drifting cathode 3 are all 1016cm-3～1020cm-3。
The length of the silicon substrate 4 is less than 2cm, the thickness is 200-1000 μm, the distance between the two collecting anodes 1 is increased when the length of the silicon substrate is too large, the drift distance of electrons is correspondingly increased, the collecting efficiency of particles is reduced, the detection area of the detector is correspondingly reduced when the length of the silicon substrate is reduced, and the detection efficiency of the detector is reduced; the thickness is selected in relation to the energy of the detected particles, the higher the energy of the detected particles, the greater the thickness of the silicon substrate 4; in the detector structure of the embodiment of the utility model, the size of the collecting anode 1 is irrelevant to the detection area, namely, the size of the collecting anode 1 can be reduced as much as possible when the detection area is enlarged, so that the capacitance of the collecting anode 1 is ensured to be smaller, the noise is not increased, and the energy resolution of the detector is ensured.
The width and the distance of the front drifting cathode 2 of the embodiment of the utility model are gradually narrowed from two ends to the middle, the back drifting cathode 3 is also a chain electrode, the width and the spacing of the front drifting cathode 2 are the same, the front drifting cathode 2 is designed again to be continuously distributed in the embodiment of the utility model, the voltage is applied to the two ends and the middle of the front drifting cathode 2, the positive drift cathode 2 can automatically divide the voltage according to the potential gradient optimally designed by the electronic drift channel, ensures that electrons are collected by the collecting anode 1 in the shortest drift time, improves the charge collection efficiency of the detector, reduces the statistical fluctuation of the electrons, therefore, the energy resolution of the detector is improved, the front drifting cathode 2 is designed into a chain-shaped and S-shaped arrangement, the structure and the process of the detector are simplified, and positive bias voltage V is applied to two ends of the front drifting cathode 2.elApplying a negative bias V in the middleoutUnder the condition of not increasing the working voltage, the effective detection area on the detector is increased, and the sensitivity of the detector is improved.
When the spiral linear silicon drift detector is used for detecting particles, a negative bias voltage V is applied in the middle of the front drift cathode 2outWith a positive bias voltage V applied acrossel，|Vout|＞|VelThe positive drift cathode 2 and the silicon substrate 4 form a PN junction after voltage is applied, the detector is depleted from two sides of the silicon substrate 4 to the middle, the potential at the position of the collecting anode 1 is the highest, and electrons generated by incident particles are collected towards the middle along an electron drift channel under the action of a transverse electric fieldThe anode 1 moves; because the structure of the detector is symmetrically distributed, as shown in fig. 2, the upper left/right corner of the detector is defined as the origin of coordinates, the parallel collection anode 1 is forward in the positive direction of the X axis, the vertical collection anode 1 is forward in the positive direction of the Y axis, Y is greater than or equal to 0 and less than or equal to l, the top surface of the vertical silicon substrate 4 is downward in the Z axis, the coordinates of the signal generating position are (X, Y), and the following relation is given:
y＝l-μ·Edr·tdrift
wherein y is the ordinate of the signal generating position and the vertical distance of the actual drift of the electrons, l is the farthest drift distance of the incident particles, l is also half of the effective detection area length of the detector due to the symmetrical structure of the detector, mu is the electron mobility, Edr is the drift electric field of the electron drift channel, tdriftFor the electron drift time, parameter l and edrr can be confirmed when the detector is designed, the time that the order measuring signal arrived collecting anode 1 when using the detector to detect can obtain the Y value, when collecting anode 1 is single strip electrode, can realize one-dimensional position resolution on the Y axle, when collecting anode 1 is a plurality of bulk electrodes, the X axle coordinate that different collecting anode 1 can obtain the collecting signal can realize the two-dimensional position resolution on XY plane.
The design method of the spiral linear silicon drift detector comprises the following steps:
step 1, determining an electric field Edr in an electronic drift channel and a front electric field E (y) of a detector;
the poisson equation for a helical linear silicon drift detector is approximated as follows:
Figure BDA0003250318540000061
wherein
Figure BDA0003250318540000062
Is the potential at the inner point (y, z) of the detector, y is the vertical distance from the incident particle to the collecting anode 1, i.e. the ordinate, z is the coordinate of the incident particle in the thickness direction of the detector, z is the [0, d ]]D is the thickness of the detector, e is the charge constant, NeffIs the effective doping concentration of the silicon substrate 4, epsilon being the relative dielectric constant of silicon, epsilon0Is a vacuum dielectric constant;
as shown in the formula (1)
Figure BDA0003250318540000063
Is calculated as shown in equation (2):
Figure BDA0003250318540000064
wherein VfdPsi (y) is the reverse potential of the silicon substrate 4 for the fully depleted voltage of the detector,
Figure BDA0003250318540000065
is the front surface potential of the silicon substrate 4;
determining an electric field component Edr, Z of an electric field Edr inside the electron drift channel in the Z direction using formula (3):
Figure BDA0003250318540000066
edr, z is in direct proportion to d/l, the total length of the detector is 2l, l is half of the length of an effective detection area of the detector, and an electric field Edr is symmetrically distributed in the detector;
the expression of the electron drift channel is obtained from equation (3) as follows:
Figure BDA0003250318540000067
since l is much larger than d in practical applications, the latter term in the above equation is negligible and is simplified as follows:
Figure BDA0003250318540000068
zchthe coordinate of the electron drift channel in the thickness direction of the detector;
will zchSubstituting the formula (2) for derivation to obtain the electric field component Edr in the Y direction in the electronic drift channel, wherein Y is shown as the formula (4):
Figure BDA0003250318540000069
because the value of Edr and z is small and can be ignored, Edr is equal to Edr and y;
the pressurization of the reverse drift cathode 3 is defined as shown in equation (5):
Figure BDA00032503185400000610
wherein VBIs constant potential, gamma is a back surface potential adjusting parameter, gamma is more than or equal to 0 and less than or equal to 1, and the formula (5) is substituted into the formula (4) to obtain a formula (6):
Figure BDA0003250318540000071
wherein E (y) is the front surface electric field of the silicon substrate 4
Figure BDA0003250318540000072
Then
Figure BDA0003250318540000073
Will be provided with
Figure BDA0003250318540000074
And
Figure BDA0003250318540000075
substituting equation (6) yields:
Figure BDA0003250318540000076
the primitive function is shown in formula (7):
Figure BDA0003250318540000077
then
Figure BDA0003250318540000078
c is a constant value, order
Figure BDA0003250318540000079
Substituting c and Φ (l) into equation (7) yields equation (8):
Figure BDA00032503185400000710
Φ (y1) and Φ (l) respectively represent values of Φ (y) when y is y1 and y is l, and represent values of Φ (y) when y is y1
Figure BDA00032503185400000711
For a positive bias | V applied across the front drift cathode 2elWhen y is equal to l
Figure BDA00032503185400000712
For applying a negative bias | V in the middle of the front drift cathode 2outI, will Vel、VoutRespectively substituting into calculation to obtain values of phi (y1) and phi (l), and substituting phi (y1) and phi (l) into a formula (8) to obtain a value of Edr;
obtaining the value of phi (y) by the values of Edr and c, thereby further obtaining the front surface potential of the silicon substrate 4
Figure BDA00032503185400000714
And a front electric field E (y),
Figure BDA00032503185400000713
step 2, determining the surface potential distribution of the silicon substrate 4 in the detector;
the combined effect of the voltages applied to the front and back sides enables the detector to be completely exhausted, | VB|＝Vfd-|VelIf phi (y) > 0 is needed to avoid the singular point, V can be obtainedBI and I VoutThe set limit of | is as follows:
|VB|≤Vfd (9)
Figure BDA0003250318540000081
when gamma is 0, the potential of each point on the back of the detector is the same, namely the back drift cathode 3 is a sheet electrode, and then | Vout|≤2VfdWhen gamma is more than 0 and less than or equal to 1, the back surface of the detector has potential gradient, namely the back surface drifting cathode 3 is a chain-shaped electrode, and at the moment
Figure BDA0003250318540000082
When the back drifting cathode 3 is a sheet electrode, the design process and the manufacturing process are relatively simple, only one voltage needs to be applied to the back when the back drifting cathode is used, the design is mostly adopted under the condition of weak radiation environment, and when the back drifting cathode 3 is a chain-shaped electrode, the upper limit of the pressurization at the outermost side can be improved, so that the intensity of a drifting electric field is improved, and the back drifting cathode is more suitable for being used in strong radiation environment;
step 3, determining the width of the front drifting cathode 2 and the distance between adjacent cathode strips;
the voltage drop between adjacent bars of the front drift cathode 2 is defined as V, and the calculation of V is shown in equation (11):
Figure BDA0003250318540000083
wherein I is the current flowing through the front drift cathode 2, I is 10 μ a to 50 μ a, since the front drift cathode 2 is arranged in an S shape, and the length of the chain increases every time the front drift cathode 2 winds around, R represents the increment of the resistance value between two points on the front drift cathode 2, L is the width of the detector, w (y) is the width of the front drift cathode 2, g (y) is the distance between adjacent front drift cathodes 2, p (y) w (y) + g (y), t is the thickness of the front drift cathode 2, ρ is the resistivity of the front drift cathode 2, and the square resistance ρ of the front drift cathode 2sFormula (11) is rewritten as follows: 2. I. L. rhos＝E(y)·P(y)·W(y)；
Let w (y) be β p (y), β be a parameter relating to the width of the front drift cathode 2, 1 ≧ β ≧ 0.6, and w (y) be substituted into equation (11)
Figure BDA0003250318540000084
Since Φ (y) shows a decreasing trend with increasing value of y, e (y) shows an increasing trend with increasing value of y, and w (y), g (y) show a decreasing trend with increasing value of y, the width w (y) of the front drift cathode 2 and the distance g (y) between adjacent front drift cathodes 2 can be determined.
The power consumption of the detector mainly comes from a drifting cathode and is in the absolute Vout|-|VelI potential difference, power consumption P ═ V (| V)out|-|VelIf the value of I is less than the above range, the width w (y) of the front drift cathode 2 should be decreased as much as possible to increase the overall resistance, but if the width of the front drift cathode 2 is too small, the exposed area of the silicon substrate 4 will be increased correspondingly to increase the surface leakage current, thereby reducing the energy resolution of the detector, and in order to comprehensively consider the power consumption and the energy resolution of the detector, the value of β is set to [0.6, 1 |, 1]。
Because the detectors are symmetrically distributed, the value range of the y value of the coordinate system constructed in the embodiment of the utility model is only half of that of the detectors, so as shown in fig. 4 and 5, the width and the spacing of the front drifting cathode 2 are gradually narrowed from two ends to the middle, the back drifting cathode 3 is also a chain-shaped electrode, and the width and the spacing of the back drifting cathode are the same as those of the front drifting cathode 2, so that the electric field distribution in the detectors can be ensured to be uniform, the electron drifting time of incident particles is shortened, and the charge collection efficiency of the detectors is improved.
In step 3, G (y) may be set to a fixed constant G, where w (y) p (y) -G, p (y) has the following expression:
Figure BDA0003250318540000091
after G (y) is set to be a fixed value, when the size of the silicon drift detector is larger, the distance between the adjacent front drift cathode 2 bars can be kept unchanged, the situation that the adjacent front drift cathode 2 cannot be completely exhausted due to the increase of G (y) is avoided, and meanwhile, partial surface leakage current can be reduced, so that the background noise of the detector is reduced, and the energy resolution of the detector is improved.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (5)

1. The spiral linear silicon drift detector is characterized by comprising a cuboid-shaped silicon substrate (4), wherein collecting anodes (1) are arranged at two opposite edges of the top surface of the silicon substrate (4), chain-shaped front drift cathodes (2) are arranged between the collecting anodes (1), the front drift cathodes (2) are distributed on the top surface of the silicon substrate (4) in an S shape, reverse drift cathodes (3) are arranged at the bottom of the silicon substrate (4), aluminum layers (6) are attached to the collecting anodes (1) and the reverse drift cathodes (3), silicon dioxide layers (5) are attached to the top surface of the silicon substrate (4) and the top surface of the front drift cathodes (2), and the silicon dioxide layers (5) at two ends of the front drift cathodes (2) and in the middle of the front drift cathodes (2) are etched, and the aluminum layers (6) are attached to the silicon dioxide layers.
2. The helical linear silicon drift detector according to claim 1, wherein the collecting anode (1) is a strip electrode or a plurality of equally spaced bulk electrodes.
3. The helical linear silicon drift detector of claim 1, wherein the reverse side drift cathode (3) is a plate electrode or a chain electrode having the same structure as the front side drift cathode (2).
4. The helical linear silicon drift detector of claim 1, wherein the width of the front drift cathodes (2) gradually increases from the middle to the two sides, and the distance between the adjacent front drift cathodes (2) is constant or gradually increases from the middle to the two sides.
5. The spiral linear silicon drift detector of claim 1, wherein the silicon substrate (4) is an N-type high-resistivity silicon with a doping concentration of 4 x 1011cm-3～2×1012cm-3The collecting anode (1) is N-type heavily doped silicon, the front drifting cathode (2) and the back drifting cathode (3) are both P-type heavily doped silicon, and the doping concentrations of the collecting anode (1), the front drifting cathode (2) and the back drifting cathode (3) are all 1016cm-3～1020cm-3。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115084288A (en) * 2022-06-24 2022-09-20 鲁东大学 Spiral silicon drift detector and design method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115084288A (en) * 2022-06-24 2022-09-20 鲁东大学 Spiral silicon drift detector and design method

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