CN211858655U - Silicon drift detector based on voltage-dividing resistor and floating electrode - Google Patents
Silicon drift detector based on voltage-dividing resistor and floating electrode Download PDFInfo
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- CN211858655U CN211858655U CN202020377032.4U CN202020377032U CN211858655U CN 211858655 U CN211858655 U CN 211858655U CN 202020377032 U CN202020377032 U CN 202020377032U CN 211858655 U CN211858655 U CN 211858655U
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Abstract
The utility model discloses a silicon drift detector based on divider resistance and floating electrode, silicon drift detector includes the silicon substrate, be equipped with the collection positive pole in the middle of the silicon substrate top surface, it is equipped with several rings of positive cathode rings to collect the positive pole outside, it is equipped with positive floating electrode between positive pole and the positive cathode ring, silicon substrate bottom surface is equipped with several rings of back cathode rings from the centre of a circle outwards, be equipped with back floating electrode between the back cathode ring, the position of back cathode ring, the size is the same with collection positive pole, positive cathode ring and back cathode ring, it has aluminium metal to adhere to on collection positive pole, positive cathode ring and the back cathode ring, positive divider resistance circle is adhered to on positive floating electrode surface, back divider resistance circle is adhered to on back floating electrode surface, be equipped with silicon dioxide between positive divider resistance circle, back divider resistance circle and the aluminium metal; the utility model discloses need not external divider during the use, convenient to use, and inside electric potential distribution is even, and is high to incident particle detection accuracy.
Description
Technical Field
The utility model belongs to the technical field of the deep space is surveyed, especially, relate to a silicon drift detector based on divider resistance and floating electrode.
Background
When a traditional concentric silicon drift detector works, a resistor matched with the traditional concentric silicon drift detector needs to be searched in a resistor bank to realize voltage division of the front side and the back side, so that an electronic drift track is formed, incident particles are detected, and difficulty in matching corresponding resistors is increased due to continuity of bias voltage in the process; if external voltage divider is connected to the traditional concentric silicon drift detector, the design of the concentric silicon drift detector is developed towards a large area, the external voltage divider increases the integration difficulty of a chip, and the concentric silicon drift detector is inconvenient to use.
The united states Brookhaven National Laboratory, BNL Laboratory, proposes the concept of a spiral voltage divider, which makes the cathode ring of a silicon drift detector into a spiral ring shape to realize automatic voltage division of the silicon drift detector, but the potential symmetry of the silicon drift detector is lacked by utilizing the spiral cathode voltage division.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a silicon drift detector based on divider resistance and floating electrode, the divider resistance of certain width of deposit and resistivity makes concentric circles silicon drift detector facilitate the use in order to realize the partial pressure between the negative pole ring, and between collecting positive pole and negative pole ring and preparing floating electrode between the negative pole ring for the inside electric potential gradient evenly distributed of concentric circles silicon drift detector.
An object of the utility model is to provide a design method of silicon drift detector based on divider resistance and floating electrode, this design method calculation is simple, and the silicon drift detector structure and the performance homoenergetic of design can satisfy the user demand.
The utility model adopts the technical scheme that a silicon drift detector based on divider resistance and floating electrodes comprises a cylindrical silicon substrate, wherein a collecting anode is doped in the middle of the front surface of the silicon substrate, a plurality of circles of front cathode rings are doped on the surface of the silicon substrate around the collecting anode, front floating electrodes are doped between the collecting anode and the front cathode rings and between adjacent front cathode rings, the top surfaces of the collecting anode and the front cathode rings are provided with aluminum metal, the top surfaces of the front floating electrodes are provided with a plurality of circles of front divider resistance rings, and silicon dioxide is arranged between the aluminum metal and the front divider resistance rings and between the front divider resistance rings;
silicon substrate bottom surface outwards mixes from the centre of a circle has several rings of back negative pole rings, the size, the position of back negative pole ring are the same with collection positive pole, front negative pole ring, it has back floating electrode to mix between the back negative pole ring, the position, the size of back floating electrode are the same with front floating electrode, back negative pole ring bottom surface is equipped with the aluminium metal, back floating electrode bottom surface is equipped with several rings of back divider resistance circles, back divider resistance circle is the same with position, the size of front divider resistance circle, be equipped with silicon dioxide between aluminium metal and the back divider resistance circle, between the back divider resistance circle.
Furthermore, the distances between the collecting anode and the front partial pressure resistance ring, between the front partial pressure resistance ring and the front cathode ring are the same, the widths of the front cathode ring and the back cathode ring gradually increase from the collecting anode to the outside, the widths of the front floating electrode and the back floating electrode gradually decrease from the collecting anode to the outside, and the thicknesses of the aluminum metal, the front partial pressure resistance ring and the back partial pressure resistance ring are all 1 μm.
Further, the collecting anode is made of N-type heavily doped materials, the front cathode ring, the front floating electrode, the back cathode ring and the back floating electrode are made of P-type heavily doped materials, and the silicon substrate is an N-type ultra-pure high-resistance silicon wafer.
Further, the doping concentration of the collecting anode is 1 multiplied by 1019/cm3The doping concentration of the front cathode ring, the front floating electrode, the back cathode ring and the back floating electrode is 1 multiplied by 1019/cm3The doping concentration of the silicon substrate is 1 multiplied by 1012/cm3。
The design method of the silicon drift detector based on the divider resistor and the floating electrode specifically comprises the following steps:
s1, determining the potential inside the concentric silicon drift detector,
potential of any point in concentric circle silicon drift detector
Equation (1) should be satisfied:
in the formula (1), x is a coordinate in the thickness direction of the concentric silicon drift detector, r is a coordinate in the radial direction of the concentric silicon drift detector, and θ is an angular coordinate, and a poisson equation of the potential of any point in the concentric silicon drift detector and the space charge q of the point can be known from the formula (1) and is shown in the formula (2):
n in formula (2)effIs the effective doping concentration of the silicon matrix in the concentric silicon drift detector,0for a vacuum dielectric constant, for a dielectric constant of silicon, the solution of the Poisson equation is
Where Φ (r) is the potential at the front of the concentric silicon drift detector and ψ (r) is the potential at the back of the concentric silicon drift detector, i.e.
VfdTo fully deplete the voltage, Vfd＝qNDd2/20，NDD is the thickness of the concentric silicon drift detector;
since the optimal drift trajectory of the incident particle is a straight line, the potentials of the front and back sides of the concentric silicon drift detector should be satisfiedThe following relationships:
VBthe voltage of the first back cathode ring on the back of the concentric circle silicon drift detector from inside to outside, and gamma is a constant;
s2, determining the basic structure parameters of the concentric silicon drift detector,
s21 effective series noise ENC of concentric silicon drift detectorseriesAnd an input capacitance ctIs shown in equation (3):
e in formula (3)nIs the energy of a wave with wave number n, h' (t) is the impulse response, tpeakEffective series noise ENC for input signal peak response timeseriesAnd an input capacitance ctProportional to the radius r of the collecting anode to reduce the input capacitanceanodeSet to 100 μm;
s22, dividing the width w of the resistance coil by the front surfaceRSet to 10 μm;
s23, the distance between the front voltage-dividing resistance ring and the collecting anode, the distance between the front voltage-dividing resistance rings, and the distance G between the front voltage-dividing resistance ring and the front cathode ringR＝10μm；
S24 width of front cathode ring closest to collecting anode
S3, total resistance of front partial pressure resistance coil between two adjacent front cathode rings
Wherein i represents the ith front cathode ring from the collecting anode, RiRepresents the total resistance of the positive divider resistor ring between the ith positive cathode ring and the (i-1) th positive cathode ring, RALDThe resistance of the atomic deposition divider resistor is shown, and rho represents the front divider resistor ringResistivity, riThe average radius of the front voltage-dividing resistance ring between two adjacent front cathode rings is shown, t represents the thickness of the front voltage-dividing resistance ring, alpha is the circumference of a unit radius circle, namely the circumference of a circle with the radius of 1, and alpha is 2 pi;
s4, calculating the number of turns of the front voltage dividing resistance coil between the two adjacent front cathode rings according to the following process:
by
Obtaining the number of turns of the front divider resistance ring between the collecting anode and the first front cathode ring
The resistance value of a first front voltage-dividing resistance coil between the collecting anode and the first front cathode ring from inside to outside is shown, and the number of the front voltage-dividing resistance coils between all adjacent front cathode rings is obtained by analogy;
s5, obtaining the radius of each front cathode ring according to the number of turns of the front voltage-dividing resistance ring between two adjacent front cathode rings,
the radius of the front partial pressure resistance ring between the collecting anode and the first front cathode ring from inside to outside is respectively as follows:
wherein
Represents the radius of the front divider resistance coil of the first coil from inside to outside,
representing the radius of a front divider resistance coil of a second coil from inside to outside;
radius of the first front cathode ring from the collecting anode:
the radiuses of all the front cathode rings are obtained by analogy;
s6, determining the distance p between the two adjacent positive cathode rings in the concentric silicon drift detector according to the formula (4) and the number of turns of the positive divider resistor ring between the two adjacent positive cathode rings0Further determining the width of each front floating electrode;
in the formula (4)
Representing the width of the ith front cathode ring from the collecting anode outward,
denotes the spacing, m, between the ith front cathode ring and the (i-1) th front cathode ringiDenotes the number of turns of the front divider resistor ring between the ith front cathode ring and the (i-1) th front cathode ring, GRIndicating the spacing, w, between adjacent front divider resistor turnsRThe width of the front voltage-dividing resistance coil is shown;
the distances between the front floating electrode and the adjacent front cathode ring are GRAccording to the distance p between the outer sides of two adjacent positive cathode rings0Determining the width of each front floating electrode;
and S7, because the back divider resistance ring, the back cathode ring and the back floating electrode on the bottom surface of the concentric circle silicon drift detector are arranged the same as the front surface, doping the collection anode, the front cathode ring, the front floating electrode, the back floating electrode and the back cathode ring on the silicon substrate according to the steps, attaching aluminum metal on the top surfaces of the collection anode, the front cathode ring and the back cathode ring, and attaching the front divider resistance ring and the back divider resistance ring on the top surfaces of the front floating electrode and the back floating electrode.
The utility model has the advantages that: the utility model realizes the autonomous voltage division of the silicon drift detector by the voltage division resistor ring with equal width of atomic layer deposition between the cathode rings of the silicon drift detector, so that the silicon drift detector does not need to be additionally provided with a resistor chain or a voltage divider during working, and the use is more convenient; the utility model discloses set up floating electrode between collection positive pole and negative pole ring and between the negative pole ring, make the inside electric potential gradient evenly distributed of concentric circles silicon drift detector, it is high to incident particle detection accuracy, to promoting silicon drift detector toward large tracts of land integration significant.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic diagram of the overall structure of a silicon drift detector.
Fig. 2 is a cross-sectional view of the present invention.
Fig. 3 is a two-dimensional potential distribution diagram of the present invention.
In the figure, 1, a collecting anode, 2, a front divider resistor ring, 3, a front cathode ring, 4, a silicon substrate, 5, a front floating electrode, 6, a back cathode ring, 7, a back divider resistor ring, 8, a back floating electrode, and 9, aluminum metal.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The silicon drift detector structure based on the divider resistors and the floating electrodes is shown in fig. 1 and fig. 2, and comprises a cylindrical silicon substrate 4, wherein a collection anode 1 is heavily doped in the middle of the front surface of the silicon substrate 4, a plurality of circles of front surface cathode rings 3 are heavily doped on the silicon substrate 4 around the collection anode 1, front surface floating electrodes 5 are heavily doped on the silicon substrate 4 between the front surface cathode rings 3 and the collection anode 1 and between the front surface cathode rings 3, the collection anode 1, the front surface cathode rings 3 and the front surface floating electrodes 5 are concentric, the tops of the collection anode 1 and the front surface cathode rings 3 are plated with aluminum metal 9, and a divider front surface resistor ring 2 is deposited on an atomic layer above the front surface floating electrodes 5; the bottom of the silicon substrate 4 is provided with a back cathode ring 6 and a back floating electrode 8 which have the same positions and sizes as the front cathode ring 3 and the front floating electrode 5, the bottom of the back cathode ring 6 is plated with aluminum metal 9, and a back voltage dividing resistance coil 7 is deposited on an atomic layer on the bottom surface of the back floating electrode 8; silicon dioxide is arranged between the aluminum metal 9 and the front side voltage division resistance coil 2, and between the aluminum metal 9 and the back side voltage division resistance coil 7 for isolation.
The silicon substrate 4 is an N-type ultra-pure high-resistance silicon wafer, and the doping concentration of the silicon substrate 4 is 1 × 1012/cm3The collecting anode 1 has a doping concentration of 1 × 1019/cm3Is heavily doped, the radius of the collecting anode 1 is 100 μm, and the front cathode ring 3, the front floating electrode 5, the back cathode ring 6 and the back floating electrode 8 are all doped with the concentration of 1 × 1019/cm3The widths of the front cathode ring 3 and the back cathode ring 6 are gradually increased from inside to outside, and the widths of the front floating electrode 5 and the back floating electrode 8 are gradually reduced from inside to outside; the thicknesses of the aluminum metal 9, the front-side voltage-dividing resistance ring 2 and the back-side voltage-dividing resistance ring 7 are all 1 micrometer, the widths of the front-side voltage-dividing resistance ring 2 and the back-side voltage-dividing resistance ring 7 are the same, and the distances between the front-side voltage-dividing resistance ring 2 and the collecting anode 1, between the front-side voltage-dividing resistance ring 2 and the front-side cathode ring 3 are the same.
The design method of the silicon drift detector based on the divider resistor and the floating electrode comprises the following steps:
s1, determining the potential inside the concentric silicon drift detector,
the generation of the drift electric field in the concentric silicon drift detector depends on the electric potential distribution of the front surface and the back surface of the concentric silicon drift detector, and any point in the concentric silicon drift detectorTo a potential of
Equation (1) should be satisfied:
as shown in fig. 1, taking the center of the collecting anode 1 as the origin of coordinates, x in formula (1) is the coordinate in the thickness direction of the concentric silicon drift detector, r is the coordinate in the radial direction of the concentric silicon drift detector, and θ is the angular coordinate, the poisson equation of the electric potential of any point in the concentric silicon drift detector and the space charge q of the point can be known from formula (1) and is shown in formula (2):
n in formula (2)effIs the effective doping concentration of the silicon matrix 4 in a concentric circular silicon drift detector,0is the vacuum dielectric constant, which is the dielectric constant of silicon; the solution of poisson's equation is:
phi (r) is the potential of the front surface of the concentric silicon drift detector, psi (r) is the potential of the back surface of the concentric silicon drift detector, i.e.
VfdTo fully deplete the voltage, Vfd＝qNDd2/20，NDD is the doping concentration of the silicon substrate 4 and the thickness of the concentric silicon drift detector;
since the optimum drift trajectory of the incident particle is a straight line, the potentials of the front and back sides of the concentric silicon drift detector should satisfy the following relationship:
VBthe voltage of a cathode ring 6 on the back of a first ring from inside to outside on the back of the concentric silicon drift detector is shown, and gamma is a constant;
s2, determining the basic structure parameters of the concentric silicon drift detector,
s21, calculating the effective series noise and the input capacitance of the concentric silicon drift detector according to the formula (3):
formula (3) enEnergy of wave with wave number n, ctFor input capacitance, h' (t) is impulse response, tpeakIs the input signal peak response time;
the effective series noise ENC of the concentric silicon drift detector can be known from the formula (3)seriesAnd an input capacitance ctThe square of the positive electrode is in direct proportion, so that the concentric silicon drift detector has lower series noise and the energy resolution of the concentric silicon drift detector is improved, the input capacitance, namely the radius of the collecting anode 1, is reduced as much as possible, and the radius of the collecting anode 1 is set to be 100 mu m;
s22, dividing the width w of the resistance coil 2 by the front surfaceRSet to 10 μm;
s23, the distance between the front-side voltage-dividing resistance coil 2 and the collecting anode 1, the distance between the front-side voltage-dividing resistance coil 2, and the distance G between the front-side voltage-dividing resistance coil 2 and the front-side cathode ring 3R＝10μm；
S24, the width of the front cathode ring 3 closest to the collecting anode 1 is
S3, total resistance of front voltage-dividing resistor ring 2 between two adjacent front cathode rings 3
i denotes the ith front cathode ring 3, R, counting outwards from the collecting anode 1iRepresents the total resistance value, R, of the front voltage-dividing resistor ring 2 between the ith front cathode ring 3 and the (i-1) th front cathode ring 3ALDIs the resistance value of the atomic deposition divider resistor, rho represents the resistivity of the front-side divider resistor coil 2, riRepresents an average radius of the front voltage-dividing resistance coil 2 between two adjacent front cathode rings 3, t represents a thickness of the front voltage-dividing resistance coil 2, α is a circumference of a unit radius circle, that is, a circumference of a circle having a radius of 1, and α ═ 2 pi;
s4, calculating the number of turns of the front voltage-dividing resistor coil 2 between two adjacent front cathode rings 3 according to the following process:
distance G between front divider resistance coils 2RIs constant, is composed of
Obtaining the number of turns of the front partial pressure resistance coil 2 between the collecting anode 1 and the first front cathode ring 3
Showing the resistance value of the first front voltage-dividing resistance coil 2 from inside to outside between the collecting anode 1 and the first front cathode ring 3, and the number of turns of the front voltage-dividing resistance coil 2 corresponding to the second front cathode ring 3
The resistance value of the first front voltage-dividing resistance coil 2 between the first front cathode ring 3 and the second front cathode ring 3 from inside to outside is shown, and the number of turns of the front voltage-dividing resistance coils 2 between all the adjacent front cathode rings 3 is obtained by analogy;
s5, obtaining the radius of each front cathode ring 3 according to the number of turns of the front voltage-dividing resistance coil 2 between two adjacent front cathode rings 3,
s51, the radius of the front partial pressure resistance coil 2 between the collecting anode 1 and the first front cathode ring 3 is from inside to outside
Wherein
The radius of the first front divider resistance coil 2 from inside to outside is shown,
the radius of the front divider resistance coil 2 of the second coil from inside to outside is shown;
radius of the first front cathode ring 3 from the collecting anode 1
The calculation formula of (a) is as follows:
wherein
To count the width of the first front cathode ring 3 outward from the collecting anode 1,
the radius of the outermost circle in the front voltage-dividing resistance coil 2 corresponding to the first front cathode ring 3;
s52, the radius of the front voltage divider coil 2 between the first front cathode ring 3 and the second front cathode ring 3 from the collecting anode 1 is:
radius of the second front cathode ring 3 from the collecting anode 1
The calculation is as follows:
repeating the steps to calculate the number of turns of the front voltage division resistance coil 2 between the adjacent front cathode rings 3, and then calculating the radius of each front cathode ring 3;
s6, determining the distance p between the outer sides of the adjacent front cathode rings 3 in the concentric circle silicon drift detector according to the number of turns of the front divider resistance coil 20The calculation of the spacing outside the adjacent front cathode rings 3 is shown in equation (4):
in the formula (4)
Representing the width of the ith front cathode ring 3 from the collecting anode 1,
denotes the spacing, m, between the ith front cathode ring 3 and the (i-1) th front cathode ring 3iDenotes the number of turns of the front voltage-dividing resistor ring 2 between the ith front cathode ring 3 and the (i-1) th front cathode ring 3, GRIndicating the spacing, w, between adjacent front divider resistance coils 2RThe width of the front voltage-dividing resistance coil 2 is shown;
the distances between the front floating electrode 5 and the adjacent front cathode ring 3 are GRAccording to the distance p between the outer sides of two adjacent positive cathode rings 30Determining the width of each front floating electrode 5, wherein the width of each front floating electrode 5 is miwR+(mi+1)GR；
S7, because the back divider resistance ring 7, the back cathode ring 6 and the back floating electrode 8 on the bottom surface of the concentric circular silicon drift detector are arranged the same as the front surface, the front surface structure of the concentric circular silicon drift detector is determined according to the steps, then the back surface structure of the concentric circular silicon drift detector is obtained, the collecting anode 1, the front cathode ring 3, the front floating electrode 5, the back floating electrode 8 and the back cathode ring 6 are doped on the front surface and the back surface of the silicon matrix 4 in sequence, aluminum metal 9 is attached to the top surfaces of the collecting anode 1, the front cathode ring 3 and the back cathode ring 6, and the front divider resistance ring 2 and the back divider resistance ring 7 are attached to the top surfaces of the front floating electrode 5 and the back floating electrode 8.
Examples
According to the utility model discloses a design method designs concentric circles silicon drift detector, each parameter of silicon drift detector is as follows: r isanode＝100μm，GR＝10μm，Gf＝10μm，
m1＝27，m2＝13，m3＝8，m 46; use the embodiment of the utility model provides a during incident particle is detected, X ray or high energy particle incident make silicon substrate 4 take place the ionization, the electron that the ionization produced removes to collecting positive pole 1, this in-process need not external divider or resistance chain, it is more convenient to use, the two-dimensional potential distribution of silicon drift detector is shown as figure 3 in the testing process, wherein the black arrow point is the electron drift direction, can know by figure 3 that the electric potential of collecting positive pole 1 department is highest, potential distribution is comparatively even in the silicon substrate 4, it is good to detect the accuracy.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (3)
1. The silicon drift detector based on the divider resistors and the floating electrodes is characterized by comprising a cylindrical silicon substrate (4), wherein a collecting anode (1) is doped in the middle of the front face of the silicon substrate (4), a plurality of circles of front face cathode rings (3) are doped on the surface of the silicon substrate (4) around the collecting anode (1), a front face floating electrode (5) is doped between the collecting anode (1) and the front face cathode rings (3) and between the adjacent front face cathode rings (3), aluminum metal (9) is arranged on the top surfaces of the collecting anode (1) and the front face cathode rings (3), a plurality of circles of front face divider resistor rings (2) are arranged on the top surface of the front face floating electrode (5), and silicon dioxide is arranged between the aluminum metal (9) and the front face divider resistor rings (2) and between the front face divider resistor rings (2);
silicon substrate (4) bottom surface is outwards doped with several rings of back negative pole rings (6) from the centre of a circle, size, position and collection positive pole (1), positive negative pole ring (3) of back negative pole ring (6) are the same, it floats electrode (8) to mix there between back negative pole ring (6), the position, the size of back floating electrode (8) are the same with positive floating electrode (5), back negative pole ring (6) bottom surface is equipped with aluminium metal (9), back floating electrode (8) bottom surface is equipped with several rings of back divider resistance circle (7), back divider resistance circle (7) are the same with position, the size of front divider resistance circle (2), be equipped with silicon dioxide between aluminium metal (9) and back divider resistance circle (7), between back divider resistance circle (7).
2. The silicon drift detector based on divider resistance and floating electrode according to claim 1, wherein the distances between the collecting anode (1) and the front divider resistance ring (2), between the front divider resistance ring (2) and the front cathode ring (3) are the same, the widths of the front cathode ring (3) and the back cathode ring (6) gradually increase from the collecting anode (1) to the outside, the widths of the front floating electrode (5) and the back floating electrode (8) gradually decrease from the collecting anode (1) to the outside, and the thicknesses of the aluminum metal (9), the front divider resistance ring (2) and the back divider resistance ring (7) are all 1 μm.
3. The silicon drift detector based on divider resistance and floating electrode according to claim 1, wherein the collecting anode (1) is a heavily doped N-type material, the front cathode ring (3), the front floating electrode (5), the back cathode ring (6) and the back floating electrode (8) are heavily doped P-type material, and the silicon substrate (4) is a highly pure high resistance silicon N-type wafer.
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