CN112366237A - Silicon drift detector capable of autonomously dividing voltage and design method thereof - Google Patents
Silicon drift detector capable of autonomously dividing voltage and design method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 117
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- 230000005684 electric field Effects 0.000 claims abstract description 23
- 239000011241 protective layer Substances 0.000 claims abstract description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
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- 239000010410 layer Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
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- 239000000463 material Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000009827 uniform distribution Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a silicon drift detector capable of autonomously dividing voltage and a design method thereof, wherein the detector comprises a regular hexagonal prism-shaped silicon substrate, a central anode is doped in the center of the front surface of the silicon substrate, a front cathode ring is doped around the central anode, a back cathode ring is doped on the back surface of the silicon substrate, metal aluminum is attached to the surfaces of the central anode, the front cathode ring and the back cathode ring, a silicon dioxide protective layer is attached to the silicon substrate among the metal aluminum, and a front voltage dividing resistance ring and a back voltage dividing resistance ring are respectively deposited in the silicon dioxide protective layer by atomic layers; the invention has uniform distribution of internal potential and electric field, no dead zone when the array is combined, no external resistor is needed when the array is used, and the limitation of the external resistor on the area and the performance of the detector is avoided.
Description
Technical Field
The invention belongs to the technical field of detectors, and particularly relates to a silicon drift detector capable of autonomously dividing voltage and a design method thereof.
Background
At present, the research work of a high-energy resolution unit and an SDD array which are core technologies in the aspect of pulsar navigation in China is seriously lagged, the domestic research is mainly focused on the manufacturing process of a single small-unit SDD, and the foreign research is developed towards a detector of a silicon drift chamber with low power consumption and high energy resolution so as to meet the technical requirements of an X-ray pulsar navigation time service system on high performance, large area coverage and high availability; the circular silicon drift detector has high symmetry, good electrical performance and wide application, but the area of an array dead zone formed by the circular silicon drift detector is too large, the resolution ratio of a concentric ring position is poor, and the performance is low.
And the SDD that uses at present can not independently divide voltage, and the resistance of electrode aluminium is too little, and if add the too high detector that can produce a large amount of heats of voltage and lead to the detector can not normally work, if add the voltage and hang down the inside dead zone that appears of detector, so need external divider resistance help partial pressure, and the complexity of external circuit can lead to the detector structure complicacy.
Disclosure of Invention
The invention aims to provide a silicon drift detector capable of automatically dividing voltage and a design method thereof.
The silicon drift detector capable of autonomously dividing the voltage comprises a regular hexagonal prism-shaped silicon substrate, wherein a center anode is doped in the center of the front surface of the silicon substrate, a plurality of hexagonal front cathode rings are doped in the front surface of the silicon substrate outside the center anode, a plurality of hexagonal back cathode rings are doped in the back surface of the silicon substrate, metal aluminum is attached to the center anode, the front cathode rings and the back cathode rings, silicon dioxide protective layers are attached to the silicon substrate among the metal aluminum, a front voltage dividing resistance ring is deposited on an atomic layer on the silicon dioxide protective layer on the front surface of the silicon substrate, and a back voltage dividing resistance ring is deposited on an atomic layer on the silicon dioxide protective layer on the back surface of the silicon substrate;
the width of the front cathode ring is the same as that of the back cathode ring, the width of the front voltage-dividing resistor ring is the same as that of the back voltage-dividing resistor ring, and the distance between the front cathode ring and the adjacent front voltage-dividing resistor ring is the same as that between the back cathode ring and the back voltage-dividing resistor ring.
Furthermore, the height of the silicon substrate (6) is 500 micrometers, the width of the front cathode ring is 90 micrometers, the width of the front voltage division resistor ring is 10 micrometers, and the distance between the front cathode ring and the adjacent front voltage division resistor ring is 15 micrometers.
Further, the central anode is made of an N-type heavily doped material, the front cathode ring and the back cathode ring are made of P-type heavily doped materials, the silicon substrate is made of an N-type lightly doped material, and the front voltage dividing resistor ring and the back voltage dividing resistor ring are made of semiconductor materials.
Further, the doping concentration of the central anode is 1 multiplied by 1019cm-3The doping concentration of the front cathode ring and the doping concentration of the back cathode ring are both 1 multiplied by 1018cm-3The doping concentration of the silicon substrate is 1 multiplied by 1012cm-3。
The design method of the silicon drift detector capable of automatically dividing the voltage is characterized by comprising the following steps of:
resistance value of front partial pressure resistance coil
0＜αiLess than 6, rho is the resistivity of the front partial pressure resistance coil, i is the variable representing the number of the front partial pressure resistance coils, riThe radius of the ith circle of front voltage-dividing resistance coil from inside to outside;
let the thickness of the deposited atomic layer of the front-side voltage-dividing resistor ring be t, and the square resistivity of the front-side voltage-dividing resistor ring be
Resistance value of front partial pressure resistance coil
to ensure electric field separation inside the silicon drift detector cellUniformly distributed, negative potential of any point (r, x, theta) in the silicon drift detector unit
The following conditions should be satisfied:
wherein x is the coordinate of the thickness direction of the detector unit, r is the coordinate of the radius direction of the detector unit, theta is the angular coordinate,
and phi (r) respectively represent the front and back potentials of the detector unit,
d is the thickness of the detector unit;
the potential difference delta V between the adjacent positive cathode rings can be obtained by the resistance value of the positive voltage-dividing resistor ringAConstant IR, electric field distribution between adjacent front cathode rings
Front side potential of silicon drift detector cell
Back surface potential
Reverse electric field
V1 BIs the voltage applied to the cathode ring on the reverse side of the innermost circle, gamma is a constant, gamma is more than or equal to 0 and less than 1, and P0The distance between the central anode and the adjacent positive cathode rings or the distance between the adjacent positive cathode rings;
potential distribution of any point on cross section of silicon substrate
For electricity at the centre of the cross-section of the silicon substratePotential distribution, wherein r' is the distance between any point on the cross section of the silicon substrate and the center of the cross section;
electric field in drift channel when incident particles drift in silicon drift detector cell
VfdIs the fully depleted voltage of the silicon drift detector cell;
determining the width of the reverse side cathode ring to be 90 mu m, the width of the reverse side voltage-dividing resistor ring to be 10 mu m and the distance between the reverse side cathode ring and the adjacent reverse side voltage-dividing resistor ring to be 15 mu m according to the width of the reverse side cathode ring, the width of the reverse side voltage-dividing resistor ring and the distance between the reverse side cathode ring and the adjacent reverse side voltage-dividing resistor ring;
respectively doping a central anode and a front cathode ring on the front surface of a silicon substrate, doping a back cathode ring on the back surface of the silicon substrate, attaching metal aluminum on the surfaces of the central anode, the front cathode ring and the back cathode ring, attaching a silicon dioxide protective layer between the metal aluminum on the silicon substrate, depositing a front divider resistor ring on the silicon dioxide protective layer between the central anode and the front cathode ring and between the adjacent front cathode rings, and depositing a back divider resistor ring on the silicon dioxide protective layer between the adjacent back cathode rings to form the silicon drift detector capable of automatically dividing voltage.
The invention has the beneficial effects that: according to the silicon drift detector, the silicon substrate is arranged into the regular hexagonal prism shape, so that no dead zone exists when the detector units form an array, the potential electric field distribution inside the detector units is more uniform, the charge collection efficiency of the electrodes is improved, a voltage division resistance ring is deposited between the electrodes, the external voltage divider is avoided when the silicon drift detector is used, and the limitation of an external voltage division resistance circuit on the area and the performance of the detector is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a top view of the present invention.
Fig. 2 is a schematic view of the lower surface of the present invention.
Fig. 3 is a cross-sectional view of the present invention.
Fig. 4 is a potential distribution diagram of an embodiment of the present invention.
Fig. 5 is a graph of the change in potential at line I in fig. 4.
Fig. 6 is a graph of the change in potential at line II in fig. 4.
FIG. 7 is an electric field distribution diagram of an embodiment of the present invention.
Fig. 8 is a graph showing the change in electric field at line III in fig. 7.
In the figure: 1. the cathode structure comprises a central anode, 2 parts of a front voltage-dividing resistor ring, 3 parts of a front cathode ring, 4 parts of a back voltage-dividing resistor ring, 5 parts of a back cathode ring, 6 parts of a silicon substrate, 7 parts of a silicon dioxide protective layer and 8 parts of metal aluminum.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 3, the silicon drift detector capable of autonomously dividing voltage comprises a regular hexagonal prism-shaped silicon substrate 6, a central anode 1 is doped in the center of the front surface of the silicon substrate 6, a plurality of hexagonal front cathode rings 3 are doped in the front surface of the silicon substrate 6 outside the central anode 1, a plurality of hexagonal back cathode rings 5 are doped in the back surface of the silicon substrate 6, metallic aluminum 8 is attached to the surfaces of the central anode 1, the front cathode rings 3 and the back cathode rings 5, a silicon dioxide protective layer 7 is attached to the silicon substrate 6 between the metallic aluminum 8, a front divider resistor ring 2 is deposited on the silicon dioxide protective layer 7 on the front surface of the silicon substrate 6, a back divider resistor ring 4 is deposited on the silicon dioxide protective layer 7 on the back surface of the silicon substrate 6, the widths of the front cathode rings 3 and the back cathode rings 5 are the same, and the widths of the front divider resistor ring 2 and the back atomic layer are the same, the distance between the front cathode ring 3 and the adjacent front voltage-dividing resistor ring 2 is the same as the distance between the back cathode ring 5 and the adjacent back voltage-dividing resistor ring 4.
The width of the front cathode ring 3 is 90 μm, the width of the front voltage-dividing resistance ring 2 is 10 μm, the distance between the front cathode ring 3 and the adjacent front voltage-dividing resistance ring 2 is 15 μm, the central anode 1 is N-type heavily doped material, and the doping concentration is 1 × 1019cm-3The front cathode ring 3 and the back cathode ring 5 are P-type heavily doped materials with the doping concentration of 1 × 1018cm-3The silicon substrate 6 is N-type lightly doped material with doping concentration of 1 × 1012cm-3The front voltage-dividing resistor ring 2 and the back voltage-dividing resistor ring 4 are made of semiconductor materials.
Examples
The design method of the silicon drift detector capable of autonomously dividing the voltage comprises the following steps:
the internal voltage of the silicon drift detector unit is provided by a front cathode ring 3 and a back cathode ring 5 which are made of P-type heavily doped materials, a front voltage division resistor ring 2 and a back voltage division resistor ring 4 are deposited in the silicon drift detector unit by adopting an atomic layer deposition technology, and the resistance value of the front voltage division resistor ring 2
Wherein alpha isiThe value of (A) is changed along with the change of the cross section shape and the radius of the silicon substrate 6, and alpha is more than 0 in the hexagonal silicon drift detectoriLess than 6, 0 < alpha in quadrilateral silicon drift detectoriP is the resistivity of the front-side voltage-dividing resistor 2, i is a variable representing the number of the front-side voltage-dividing resistor 2, r is < 4iThe radius of the ith circle of the front divider resistance coil 2 from inside to outside;
let the thickness of the atomic layer deposition of the front-side voltage-dividing resistor ring 2 be t, and the square resistivity of the front-side voltage-dividing resistor ring 2
Resistance of front partial pressure resistance coil 2
the internal drift electric field of the hexagonal silicon drift detector is related to the positive potential and the negative potential of the detector unit, and the negative potential of any point (r, x, theta) in the hexagonal silicon drift detector
The following conditions should be satisfied:
wherein x is the coordinate of the thickness direction of the detector unit, r is the coordinate of the radius direction of the detector unit, theta is the angular coordinate,
and phi (r) respectively represent the front and back potentials of the detector unit,
d is the thickness of the detector unit;
the potential difference delta V between the adjacent positive cathode rings 3 is calculated by the resistance value of the positive voltage-dividing resistor ring 2AConstant IR phaseElectric field distribution between adjacent front cathode rings 3
Potential of front surface of silicon substrate 6
The potential distribution of the back side of the detector unit is determined by the potential of the front side, and the potential distribution of the back side is
Reverse electric field
Wherein V1 BIs the voltage applied to the cathode ring 5 on the reverse side of the innermost circle, gamma is a constant, gamma is more than or equal to 0 and less than 1, and P0The distance between the central anode 1 and the adjacent front cathode ring 3 or the distance between the adjacent front cathode rings 3;
potential distribution at arbitrary point on the cross section of the silicon substrate 6
Is the potential distribution at the center of the cross section of the silicon substrate 6, and r' is the distance between any point on the cross section of the silicon substrate 6 and the center of the cross section;
electric field in drift channel when incident particles drift in silicon drift detector cell
VfdIs the fully depleted voltage of the silicon drift detector cell;
the thickness of a silicon substrate 6 is made to be 500 micrometers, the size ranges of a central anode 1, a front cathode ring 3 and a back cathode ring 5 are preliminarily determined according to a doping process and the size of the silicon substrate 6, the voltage applied to each electrode is further determined, titanium nitride is used as a divider resistor, the sizes, the doping concentrations and the applied voltage of the central anode 1, the front cathode ring 3 and the back cathode ring 5 are used as input, semiconductor simulation software Silvaco is utilized to screen out a silicon drift detector unit with uniform potential distribution and electric field distribution and obvious electron drift track, the width of the front cathode ring 3 in the unit is 90 micrometers, the distance between the central anode 1 and an adjacent front divider resistor ring 2 is 15 micrometers, the distance between the front cathode ring 3 and an adjacent front divider resistor ring 2 is 15 micrometers, and the radius of the central anode 1 is 50 micrometers;
because the width of the reverse side cathode ring 5, the width of the reverse side voltage-dividing resistor ring 4, the distance between the adjacent reverse side cathode rings 5 and the distance between the reverse side cathode ring 5 and the reverse side voltage-dividing resistor ring 4 are the same as those of the front side, the width of the reverse side cathode ring 5 is 90 mu m, the width of the reverse side voltage-dividing resistor ring 4 is 10 mu m, the deposition thickness t is 0.05 mu m, the distance between the reverse side cathode ring 5 and the reverse side voltage-dividing resistor ring 4 is 15 mu m, and the distance between the adjacent reverse side cathode rings 5 is 130 mu m;
doping a central anode 1 at the center of the front surface of a silicon substrate 6, doping a cathode ring 3 of the front surface and a cathode ring 5 of the back surface of the silicon substrate 6 respectively at the front surface and the back surface of the silicon substrate 6, attaching metallic aluminum 8 on the surfaces of the central anode 1, the cathode ring 3 of the front surface and the cathode ring 5 of the back surface, attaching a silicon dioxide protective layer 7 on the silicon substrate 6 between the metallic aluminum 8, and respectively depositing a partial pressure resistance ring 2 of the front surface and a partial pressure resistance ring 4 of the back surface on the silicon dioxide protective layer 7 between the central anode 1 and the cathode ring 3 of the front surface, between the cathode ring 3 of the adjacent front surface and between the cathode ring 5 of the adjacent back.
The potential distribution diagram and the electric field distribution diagram of the silicon drift detector are detected by using Silvaco software, as shown in figures 4 and 7 respectively, the potential distribution inside the detector unit is symmetrical and uniform, the drift speed of electrons is stable during drift, the electrons are not easily trapped by defects in a dead zone, and the electrons can be stably trapped by a central anode; fig. 5 is a section at 818 μm (the position of line I in fig. 4), and it can be seen from fig. 5 that when the distance from the center of the cross section of the silicon substrate 6 is constant, the potential in the height direction of the silicon drift detector unit increases and then decreases, and the incident electrons drift from a low potential to a high potential and are captured by the central anode 1 of the detector unit; FIG. 6 is a sectional view of the line II in FIG. 4, and it can be seen from FIG. 6 that the potential in the radial direction of the silicon drift detector is uniformly reduced when the height is not greatly changed, the electric field at the position is constant, and the electrons drift to the central anode 1 at a constant speed; fig. 8 is a cross-sectional view of the position of line III in fig. 7, and it can be seen from fig. 8 that the electric field is first reduced and then increased, so that the electrons will first snap into the device and then drift to the central anode 1 at a constant rate.
The internal potential and the electric field of the invention are distributed uniformly, incident particles can drift to the central anode 1 rapidly at a stable speed, no dead zone exists when the array is formed, the incident particles can not be captured by defects in the dead zone when drifting, the particle collection efficiency of the central anode 1 is improved, the detection resolution is improved, meanwhile, the invention is provided with a divider resistor, an external divider resistor is not needed when the array is used, and the limitation of the external divider resistor on the area and the performance of a silicon drift detector is avoided.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (5)
1. The silicon drift detector capable of autonomously dividing voltage is characterized by comprising a regular hexagonal prism-shaped silicon substrate (6), the center of the front surface of the silicon substrate (6) is doped with a central anode (1), the front surface of the silicon substrate (6) at the outer side of the central anode (1) is doped with a plurality of hexagonal front cathode rings (3), the reverse side of the silicon substrate (6) is doped with a plurality of hexagonal reverse side cathode rings (5), the central anode (1), the front cathode ring (3) and the back cathode ring (5) are all adhered with metal aluminum (8), silicon dioxide protective layers (7) are attached to the silicon substrates (6) among the metal aluminum (8), front voltage division resistor rings (2) are deposited on the silicon dioxide protective layers (7) on the front sides of the silicon substrates (6) in an atomic layer mode, and back voltage division resistor rings (4) are deposited on the silicon dioxide protective layers (7) on the back sides of the silicon substrates (6) in an atomic layer mode;
the width of the front cathode ring (3) is the same as that of the back cathode ring (5), the width of the front voltage-dividing resistor ring (2) is the same as that of the back voltage-dividing resistor ring (4), and the distance between the front cathode ring (3) and the adjacent front voltage-dividing resistor ring (2) and the distance between the back cathode ring (5) and the back voltage-dividing resistor ring (4) are the same.
2. The silicon drift detector of claim 1, wherein the height of the silicon substrate (6) is 500 μm, the width of the front cathode ring (3) is 90 μm, the width of the front divider resistor ring (2) is 10 μm, and the distance between the front cathode ring (3) and the adjacent front divider resistor ring (2) is 15 μm.
3. The silicon drift detector capable of automatically dividing voltage according to claim 1, wherein the central anode (1) is an N-type heavily doped material, the front cathode ring (3) and the back cathode ring (5) are both P-type heavily doped materials, the silicon substrate (6) is an N-type lightly doped material, and the front voltage dividing resistor ring (2) and the back voltage dividing resistor ring (4) are both semiconductor materials.
4. Silicon drift detector with autonomous voltage division according to claim 1, characterized in that the doping concentration of the central anode (1) is 1 x 1019cm-3Said front sideThe doping concentration of the cathode ring (3) and the reverse cathode ring (5) is 1 multiplied by 1018cm-3The doping concentration of the silicon substrate (6) is 1 multiplied by 1012cm-3。
5. The design method of the silicon drift detector capable of autonomously dividing the voltage according to any one of claims 1 to 4, comprising the following steps:
step 1, calculating the resistance distribution of the silicon drift detector unit:
resistance value of front partial pressure resistance coil (2)
0＜αiLess than 6, rho is the resistivity of the front voltage-dividing resistor ring (2), i is a variable representing the number of the front voltage-dividing resistor ring (2), riThe radius of the ith circle of front divider resistance ring (2) from inside to outside;
let the thickness of the atomic layer deposition of the front-side voltage-dividing resistance coil (2) be t, and the square resistivity of the front-side voltage-dividing resistance coil (2)
Resistance value of front partial pressure resistance coil (2)
Step 2, calculating the electric field voltage distribution in the silicon drift detector unit;
to ensure uniform electric field distribution inside the silicon drift detector unit, the negative potential of any point (r, x, theta) inside the silicon drift detector unit
The following conditions should be satisfied:
wherein x is the coordinate of the thickness direction of the detector unit, r is the coordinate of the radius direction of the detector unit, theta is the angular coordinate,
and phi (r) respectively represent the front and back potentials of the detector unit,
d is the thickness of the detector unit;
the potential difference delta V between the adjacent positive cathode rings (3) can be obtained by the resistance value of the positive voltage-dividing resistor ring (2)AIR, electric field distribution between adjacent front cathode rings (3)
Front side potential of silicon drift detector cell
Back surface potential
Reverse electric field
V1 BIs the voltage applied to the cathode ring (5) on the reverse side of the innermost circle, gamma is a constant, gamma is more than or equal to 0 and less than 1, P0The distance between the central anode (1) and the adjacent positive cathode ring (3) or the distance between the adjacent positive cathode rings (3);
potential distribution at any point on the cross section of the silicon substrate (6)
Is the potential distribution at the center of the cross section of the silicon substrate (6), and r' is the distance between any point on the cross section of the silicon substrate (6) and the center of the cross section;
step 3, determining the optimal drift path of the incident particles in the silicon drift detector unit to obtain the electric field distribution in the drift channel:
electric field in drift channel when incident particles drift in silicon drift detector cell
VfdIs the fully depleted voltage of the silicon drift detector cell;
step 4, setting the width of the front face voltage-dividing resistance ring (2) to be 10 microns, setting the deposition thickness t to be 0.05 microns, determining the width of the front face cathode ring (3) to be 90 microns through semiconductor simulation software Silvaco, setting the distance between the central anode (1) and the adjacent front face voltage-dividing resistance ring (2) to be 15 microns, setting the distance between the front face cathode ring (3) and the adjacent front face voltage-dividing resistance ring (2) to be 15 microns, and setting the radius of the central anode (1) to be 50 microns;
step 5, determining the reverse structure of the silicon drift detector, and constructing the silicon drift detector capable of automatically dividing voltage;
determining the width of the reverse side cathode ring (5) to be 90 mu m, the width of the reverse side voltage-dividing resistor ring (4) to be 10 mu m and the distance between the reverse side cathode ring (5) and the adjacent reverse side voltage-dividing resistor ring (4) to be 15 mu m according to the width of the reverse side cathode ring (3), the width of the reverse side voltage-dividing resistor ring (2) and the distance between the reverse side cathode ring (3) and the adjacent reverse side voltage-dividing resistor ring (2);
doping a central anode (1) and a front cathode ring (3) on the front surface of a silicon substrate (6), doping a back cathode ring (5) on the back surface of the silicon substrate, attaching metallic aluminum (8) on the surfaces of the central anode (1), the front cathode ring (3) and the back cathode ring (5), attaching a silicon dioxide protective layer (7) on the silicon substrate (6) between the metallic aluminum (8), depositing a front divider resistor ring (2) on the atomic layer of the silicon dioxide protective layer (7) between the central anode (1) and the front cathode ring (3) and between the adjacent front cathode rings (3), depositing a back divider resistor ring (4) on the atomic layer of the silicon dioxide protective layer (7) between the adjacent back cathode rings (5), and forming the silicon drift detector capable of automatically dividing voltage.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115020531A (en) * | 2022-06-02 | 2022-09-06 | 上海奕瑞光电子科技股份有限公司 | Silicon drift detector |
| CN115084288A (en) * | 2022-06-24 | 2022-09-20 | 鲁东大学 | Spiral silicon drift detector and design method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115020531A (en) * | 2022-06-02 | 2022-09-06 | 上海奕瑞光电子科技股份有限公司 | Silicon drift detector |
| CN115020531B (en) * | 2022-06-02 | 2023-12-01 | 上海奕瑞光电子科技股份有限公司 | Silicon drift detector |
| CN115084288A (en) * | 2022-06-24 | 2022-09-20 | 鲁东大学 | Spiral silicon drift detector and design method |
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