CN210805786U - Concentric ring type large-area silicon drift detector - Google Patents

Concentric ring type large-area silicon drift detector Download PDF

Info

Publication number
CN210805786U
CN210805786U CN201921868528.5U CN201921868528U CN210805786U CN 210805786 U CN210805786 U CN 210805786U CN 201921868528 U CN201921868528 U CN 201921868528U CN 210805786 U CN210805786 U CN 210805786U
Authority
CN
China
Prior art keywords
detector
drift
silicon
electrode
concentric ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201921868528.5U
Other languages
Chinese (zh)
Inventor
李正
母恒恒
刘曼文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiangtan University
Original Assignee
Xiangtan University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiangtan University filed Critical Xiangtan University
Priority to CN201921868528.5U priority Critical patent/CN210805786U/en
Application granted granted Critical
Publication of CN210805786U publication Critical patent/CN210805786U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Measurement Of Radiation (AREA)

Abstract

The utility model belongs to the technical field of detectors, and discloses a concentric ring type large-area silicon drift detector, which calculates the width distribution of electrodes and resistors of the detector; calculating the electric field voltage distribution of the silicon drift detector; determining an optimal drift path from point S1 to point S2 in the drift electric field and drift; determining the design of the rear surface of the silicon drift detector; design of floating electrode. The utility model discloses to the analysis that SDD carrier drift action law and heavily doped electrode grow. Designing a double-sided electrode which has double-sided correlation, not only keeps a uniform electron drift electric field, but also provides a smooth drift track, and establishing an innovative design and manufacturing mode for efficiently collecting SDD with high energy resolution and high-efficiency of soft X-ray particles with the intensity of 0.5-15 keV. A layer of voltage dividing resistor is deposited between the electrodes of the concentric circular silicon drift detector by using the ALD technology, so that the concentric circular detector can normally work without an additional voltage divider.

Description

Concentric ring type large-area silicon drift detector
Technical Field
The utility model belongs to the technical field of the detector, especially, relate to an utilize concentric ring type large tracts of land silicon drift detector and application of partial pressure in ALD.
Background
Currently, the closest prior art: at present, the research work of a high-energy resolution unit and an SDD array SDD, which are core technologies in the aspect of pulsar navigation in China, is seriously lagged. Domestic research is mainly focused on the aspect of the manufacturing process of a single SDD with a small area. The international research on the X-ray detector is developed towards the technical direction of a silicon drift chamber detector with low power consumption and high energy resolution, so that the important technical requirements of high performance, large area coverage and high availability of an X-ray pulsar autonomous navigation time service system are met. In the family of detectors, concentric ring type detectors have been used for a long time and have excellent performance, but the concentric ring type detectors have the characteristics of small area and need external resistors for voltage division. At present, the international SDD has small area and high price, and no mature technology exists in China.
In view of the above, there are problems at present;
(1) there is a need in the art to improve the construction of a detector so that it does not require an external voltage divider.
(2) At present, domestic SDD research still stays at the stage of small unit area, the research in research colleges and universities and enterprises are highly dependent on import, and once the design and manufacturing technical bottleneck of a large-area SDD unit is broken, the SDD unit plays an important role in the development of Chinese detectors and various fields applying the detectors.
(3) Although the small-area concentric annular cylindrical detector has high symmetry and good electrical performance, the dead zone of the array formed by the small-area concentric annular cylindrical detector is too large, and the performance is reduced.
The significance of solving the technical problems is as follows: due to the technical blockade abroad and the deficiency of domestic basic research, no research and development technologies such as design and manufacture of large-area SDD and arrays thereof exist at home at present. Therefore, the high-energy resolution SDD key technology attack and test verification applied to the X-ray pulsar autonomous navigation time service system in China is urgently needed to be accelerated, the high point of the technological strategy is seized, the cross-over development of the detector technology is realized, and the method has extremely important significance for breaking through the technical bottleneck of the domestic pulsar autonomous positioning navigation time service system.
SUMMERY OF THE UTILITY MODEL
To the problem that prior art exists, the utility model provides an utilize concentric ring type large tracts of land silicon drift detector and application of partial pressure in ALD.
The utility model discloses a realize like this, a concentric ring type large tracts of land silicon drift detector that design method of utilizing the concentric ring type large tracts of land silicon drift detector of partial pressure in ALD obtained, concentric ring type large tracts of land silicon drift detector includes: the cathode structure comprises an anode electrode, a front cathode electrode, a front divider resistor, a front protection ring, a back cathode electrode, a back divider resistor, a front protection ring, a back protection ring, a substrate, a floating electrode on the upper surface, a floating electrode on the lower surface, an upper surface silicon dioxide layer and a lower surface silicon dioxide layer.
Further, the anode electrode is heavily doped N-type semiconductor silicon.
Further, the front cathode electrode is heavily doped P-type semiconductor silicon;
and the reverse cathode electrode is made of heavily doped P-type semiconductor silicon.
Another object of the present invention is to provide an X-ray detector using the concentric ring type large area silicon drift detector utilizing ALD internal partial pressure.
To sum up, the utility model discloses an advantage and positive effect do: the utility model discloses starting from the particle theoretical calculation method of new construction, novel technology integrated design and light, solved the concentric ring work through the ALD technique and had the problem of external resistance partial pressure. The utility model discloses a concentric ring type silicon drift detector of large tracts of land, the radius of this design is > 1cm moreover, so the area of this design is greater than 314mm2The area of the array is far larger than that of a small-area detector, and the cost performance of the unit area of the array is higher than that of the small-area detector. Due to the fact thatThe circular shape has the highest symmetry, so the electrical performance is better, the electric field potential distribution in the structure is more uniform, the radius of a small-area concentric ring-shaped detector is about 300 mu m, so the small-area concentric ring-shaped detector needs to be formed into an array for use, but the structure designs the large-area concentric ring-shaped over-drift detector, the radius is more than 1cm, and the area is more than 314mm2The area of the detector is far larger than that of a small-area detector, the detector does not need to be used for forming an array, and the problem that the dead zone is too large when the concentric annular cylindrical detectors form the array is solved.
The utility model utilizes ALD deposition resistance to make the concentric ring-shaped detector not need external resistance to divide pressure, the spiral ring-shaped detector also has the function of internal voltage division, but the structural design is more excellent and different than the structure and performance of the spiral ring-shaped detector; (1) the spiral ring detector uses spiral ring type cathode ring partial pressure, while the concentric ring using ALD deposition resistance partial pressure uses resistance ring partial pressure, the cathode ring does not participate in the partial pressure. (2) The spiral ring detector utilizes the spiral cathode ring partial pressure to influence the electric field, the potential and the voltage in the collection, while the concentric ring detector utilizing ALD deposition resistance partial pressure uses the resistance ring partial pressure, and the resistance ring does not influence the electric field, the potential and the voltage in the collection (the potential is uniformly changed, the electric field is a fixed value, and the voltage between the cathode rings is a fixed value). The design method of the concentric annular large-area silicon drift detector with the ALD resistor and the floating electrode is as follows; determining the width distribution of the electrode and the resistor of the detector; determining electric fields and electric potentials of the front surface and the rear surface of the silicon drift detector; determining an optimal drift path from point S1 to point S2 in the drift electric field and drift; determining the design of the rear surface of the silicon drift detector; a floating electrode is defined. The structure is mainly based on a new structure and a new process, and the SDD carrier drift behavior rule and the growth of a heavily doped electrode are analyzed. Designing a double-sided electrode which has double-sided correlation, not only keeps a uniform electron drift electric field, but also provides a smooth drift track, and establishing an innovative design and manufacturing mode for efficiently collecting SDD with high energy resolution and the intensity of soft X-ray particles of 0.5-15 keV.
The utility model discloses structural design is that deposit one deck resistance between concentric circular's silicon drift detector electrode, just so can make concentric circular's detector can normally work under the condition that does not need plus the voltage divider. In the design, the resistance value R of the resistors among all the electrodes is a fixed value, so that uniform voltage division, namely constant delta V, can be realized.
Drawings
FIG. 1 is a schematic diagram of a concentric ring-type large area silicon drift detector utilizing partial pressure in ALD, according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the reverse side (i.e., the side without the anode) of a concentric ring type large area silicon drift detector utilizing partial pressure in ALD, according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a concentric ring-type large area silicon drift detector utilizing partial pressure in ALD, in accordance with an embodiment of the present invention;
in the figure: 1. an anode electrode; 2. a front cathode electrode; 3. a front divider resistor; 4. a front side guard ring; 5. a back cathode electrode; 6. a reverse side divider resistor; 7. front and back protection rings; 8. a substrate; 9. a floating electrode on the upper surface; 10. a floating electrode on the lower surface; 11. an upper surface silicon dioxide layer; 12. and a lower surface silicon dioxide layer.
Fig. 4 is a flow chart of a design method of a concentric ring type large area silicon drift detector using partial pressure in ALD according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
To solve the problems existing in the prior art, the utility model provides a concentric ring type large-area silicon drift detector, a design method and an application which utilize the ALD internal partial pressure, and the utility model is described in detail with the accompanying drawings.
As shown in fig. 1-3, the embodiment of the present invention provides a concentric ring type large area silicon drift detector using ALD internal partial pressure, which includes: an anode electrode 1, a front cathode electrode 2, a front divider resistor 3, a front guard ring 4, a back cathode electrode 5, a back divider resistor 6, a front guard ring 7, a substrate 8, a floating electrode 9 on the upper surface, a floating electrode 10 on the lower surface, an upper surface silicon oxide layer 11, and a lower surface silicon oxide layer 12.
In a preferred embodiment of the present invention, the anode electrode 1 is heavily doped N-type semiconductor silicon.
In a preferred embodiment of the present invention, the front cathode electrode 2 is heavily doped P-type semiconductor silicon.
In a preferred embodiment of the present invention, the reverse cathode electrode 5 is heavily doped P-type semiconductor silicon.
As shown in fig. 4, a method for designing a concentric ring-type large-area silicon drift detector using ALD internal partial pressure according to an embodiment of the present invention includes the following steps:
s401: calculating the width distribution of the electrode and the resistor of the detector;
s402: calculating the electric field voltage distribution of the silicon drift detector;
s403: determining an optimal drift path from point S1 to point S2 in the drift electric field and drift;
s404: determining the design of the rear surface of the silicon drift detector;
s405: design of floating electrode.
The embodiment of the utility model provides an utilize design method of partial pressure's concentric ring type large tracts of land silicon drift detector in ALD specifically includes following step:
(1) the width distribution of the electrodes and resistors of the detector is calculated, and the voltage distribution is provided by a heavily doped P-type cathode passing through a concentric circle shape, and the P-type heavily doped cathode is formed by ion implantation. As shown in FIG. 1, the width of the ion implantation region at the radial r point is Wr cathWhich defines the width of the concentric circular cathode in the radial direction r. The width of the resistor at the radial r point is Wi R，P0Is the spacing between adjacent cathode rings to a constant value, G (r) is the gap between adjacent implanted regions, G0The width between the adjacent electrode and the resistor is a certain value;
the distance between the concentric circles is as follows:
P0＝Wi cath+2G0+Wi R(1)
the resistance value of the resistor is;
Figure DEST_PATH_GDA0002457193510000051
where i is denoted as the ith circle, α relates to the shape of the figure, indicating the perimeter of the figure, which in this configuration represents a circular arc
Figure DEST_PATH_GDA0002457193510000055
ρ is the resistivity of the resistance.
Is obtained from the formula (3);
Figure DEST_PATH_GDA0002457193510000052
r1radius of first ring resistance, W1 RIs the width of the first ring of resistors.
The radius of the collecting anode is:
Figure DEST_PATH_GDA0002457193510000053
riradius representing the i-th turn resistance:
Figure DEST_PATH_GDA0002457193510000054
substituting the formula (5) into the formula (3);
Figure DEST_PATH_GDA0002457193510000061
substituting the formula (6) into the formula (1) to obtain:
Figure DEST_PATH_GDA0002457193510000062
the resistance width and the cathode width of any circle can be calculated by the above formulas.
(2) Calculating the electric field voltage distribution of the silicon drift detector, wherein the internal drift electric field of the cylindrical silicon drift detector is related to the upper surface potential distribution and the lower surface potential distribution of the detector, and the negative potential of any point (r, x, theta) in the cylindrical silicon drift detector satisfies the following conditions:
Figure DEST_PATH_GDA0002457193510000064
wherein x is the coordinate of the thickness direction of the detector, r is the coordinate along the radius direction of the cylinder, and theta is the angular coordinate.
Figure DEST_PATH_GDA0002457193510000065
And Φ (r) are the potentials of the front and rear surfaces (x ═ 0 and x ═ d), respectively:
Figure DEST_PATH_GDA0002457193510000066
since the voltage dividing resistance between the cathode rings is constant in this design, Δ V is constant, Δ VARepresenting the potential difference of the front surface, Δ VBRepresents a negative potential difference:
Figure DEST_PATH_GDA0002457193510000067
Figure DEST_PATH_GDA0002457193510000068
t represents the thickness of atomic layer deposition:
Figure DEST_PATH_GDA0002457193510000069
ρssquare resistivity for resistance:
Figure DEST_PATH_GDA00024571935100000610
the voltage (Δ V) between adjacent cathode rings is;
ΔV＝RI＝EP0＝constant (14)
IR (r) is given by ohm's law, EP0Derived from the electric field integration. Where I is the current of the cathode and E is the surface field.
Equations (13) and (14) relate the geometry and current of the resistive ring to the SDD surface electric field:
ρsαriI＝P0EWi R(15)
(3) determining the optimal drift path from the point S1 to the point S2 in the drift electric field and the drift, wherein the surface electric field distribution obtained according to the equation (12) is;
Figure DEST_PATH_GDA0002457193510000071
substituting the formula (15) into the formula (16);
Figure DEST_PATH_GDA0002457193510000072
the corresponding distribution of the reverse voltage is determined by the distribution of the front voltage, and the distribution of the reverse electric field is as follows:
Figure DEST_PATH_GDA0002457193510000077
wherein V1 BIs the voltage applied to the first ring of cathodes on the opposite side, and gamma is a constant.
The drift electric field in the SDD electron drift channel is;
Figure DEST_PATH_GDA0002457193510000073
or:
Figure DEST_PATH_GDA0002457193510000074
e (r) is determined by equation (15),
Figure DEST_PATH_GDA0002457193510000075
is determined by equation (17).
(4) Design for determining back surface of silicon drift detector
The back surface potential can be calculated from equation (18):
Figure DEST_PATH_GDA0002457193510000076
a back surface electric field;
Figure DEST_PATH_GDA0002457193510000081
the other parameters of the back surface are the same as those of the front surface, (such as the width of the cathode ring, the width of the resistor, the distance between the cathode rings, the resistor and the distance between the cathode rings, etc. are all the same.
(5) Floating electrode
P0＝G(r)+Wi cath(23)
Is available from (1) and (23);
G(r)＝2G0+Wi R(24)
as can be seen from equation (5), since the resistance width is proportional to the radius, the resistance width increases as the radius increases, and G is also because of0The value is constant, so G (r) is also proportional to the radius, and as G (r) is increased, a region with zero electric field appears in the center of the substrate, and a floating electrode is added to avoid the region. The floating electrode is an ion implantation region formed by implanting the same ions and concentration as the cathode ring.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims (4)

1. A concentric ring type large area silicon drift detector utilizing partial pressure in ALD, the concentric ring type large area silicon drift detector comprising: the cathode structure comprises an anode electrode, a front cathode electrode, a front divider resistor, a front protection ring, a back cathode electrode, a back divider resistor, a front protection ring, a back protection ring, a substrate, a floating electrode on the upper surface, a floating electrode on the lower surface, an upper surface silicon dioxide layer and a lower surface silicon dioxide layer.
2. The concentric ring type large area silicon drift detector utilizing partial pressure in ALD of claim 1 wherein said anode electrode is heavily doped N-type semiconductor silicon.
3. The concentric ring type large area silicon drift detector utilizing ALD internal partial pressure as claimed in claim 1 wherein said front cathode electrode is heavily doped P-type semiconductor silicon;
and the reverse cathode electrode is made of heavily doped P-type semiconductor silicon.
4. An X-ray detector using the concentric ring type large area silicon drift detector using partial pressure in ALD as claimed in any one of claims 1 to 3.
CN201921868528.5U 2019-11-01 2019-11-01 Concentric ring type large-area silicon drift detector Active CN210805786U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201921868528.5U CN210805786U (en) 2019-11-01 2019-11-01 Concentric ring type large-area silicon drift detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921868528.5U CN210805786U (en) 2019-11-01 2019-11-01 Concentric ring type large-area silicon drift detector

Publications (1)

Publication Number Publication Date
CN210805786U true CN210805786U (en) 2020-06-19

Family

ID=71228218

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201921868528.5U Active CN210805786U (en) 2019-11-01 2019-11-01 Concentric ring type large-area silicon drift detector

Country Status (1)

Country Link
CN (1) CN210805786U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116741845A (en) * 2023-06-09 2023-09-12 湘潭大学 Equal-clearance spiral ring large-area silicon drift detector with controllable clearance gap

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116741845A (en) * 2023-06-09 2023-09-12 湘潭大学 Equal-clearance spiral ring large-area silicon drift detector with controllable clearance gap
CN116741845B (en) * 2023-06-09 2024-06-11 湘潭大学 Equal-clearance spiral ring large-area silicon drift detector with controllable clearance gap

Similar Documents

Publication Publication Date Title
CN108281506B (en) silicon drift detector
CN109273538B (en) Silicon drift detector based on surface electric field control and design method thereof
CN1203669A (en) Semiconductor radiation detector with enhanced charge collection
CN110729382A (en) Concentric ring type large-area silicon drift detector, design method and application
CN210805786U (en) Concentric ring type large-area silicon drift detector
CN106199680A (en) Slow neutron detection device
CN216563149U (en) Three-dimensional epitaxial injection hexagonal electrode silicon detector
CN214012950U (en) Silicon drift detector capable of automatically dividing voltage
CN111863845B (en) Silicon pixel detector with spiral ring structure on single-sided cathode and array thereof
CN208835074U (en) A kind of three-dimensional parallel-plate electrode semiconductor detector and detection device
CN112366237B (en) Silicon drift detector capable of realizing autonomous voltage division and design method thereof
CN115732578A (en) Double-sided equal-cathode annular gap spiral silicon drift detector and design method thereof
CN112071945A (en) Spiral ring electrode silicon array detector
CN111863848A (en) Silicon pixel detector based on floating electrode and design method thereof
CN212517206U (en) Silicon pixel detector with single-sided cathode in spiral ring structure and array thereof
CN115826031A (en) High-purity germanium drift detector
CN116741845B (en) Equal-clearance spiral ring large-area silicon drift detector with controllable clearance gap
CN111370527B (en) Equal-gap gradient increasing concentric circle type double-sided silicon drift detector and design method thereof
CN112366237A (en) Silicon drift detector capable of autonomously dividing voltage and design method thereof
CN212542438U (en) Fan-shaped alternating silicon pixel detector
CN209896073U (en) Square spiral silicon drift detector
CN209016068U (en) Based on a kind of silicon drifting detector (SDD) for controlling surface field
CN211858655U (en) Silicon drift detector based on voltage-dividing resistor and floating electrode
CN104269443B (en) Constant current diode
CN209785962U (en) Double-sided cathode spiral ring gradual change type silicon drift detector

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant