CN111863845B - Silicon pixel detector with spiral ring structure on single-sided cathode and array thereof - Google Patents
Silicon pixel detector with spiral ring structure on single-sided cathode and array thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 71
- 239000010703 silicon Substances 0.000 title claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 238000005468 ion implantation Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 4
- 239000002245 particle Substances 0.000 description 11
- 238000001514 detection method Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005433 particle physics related processes and functions Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention discloses a silicon pixel detector with a single-sided cathode in a spiral ring structure and an array thereof, which comprise an N-type high-resistance silicon substrate, wherein a SiO 2 oxide layer is generated on the top surface of the N-type high-resistance silicon substrate, a P+ heavy-doped cathode spiral ring structure is formed on the SiO 2 oxide layer through etching and ion implantation, the P+ heavy-doped cathode spiral ring structure is in a planar spiral ring structure, a collecting cathode connected with the P+ heavy-doped cathode spiral ring structure is arranged at the central position of the P+ heavy-doped cathode spiral ring structure, and an n+ heavy-doped ion implantation layer is formed on the bottom surface of the N-type high-resistance silicon substrate through etching and ion implantation. The P+ heavily doped cathode spiral ring structure takes the collecting cathode as a starting position and is spirally extended to any side edge of the SiO 2 oxide layer outwards in a square or polygonal shape anticlockwise. The silicon pixel detector with the single-sided cathode in the spiral ring structure forms a silicon pixel detector array with the single-sided cathode in the spiral ring structure. The effective working area of the detector is reduced, and the advantage of low capacitance of the detector is ensured.
Description
Technical Field
The invention belongs to the technical field of radiation detection, and relates to a silicon pixel detector with a spiral ring structure on a single-sided cathode and an array thereof.
Background
Silicon pixel detectors (Silicon Pixel Detector) were developed for atomic, nuclear and elementary particle physics. Silicon pixel detectors are now widely used in the fields of deep space exploration, medical imaging, particle trajectory exploration in high-energy materials, food safety detection, and radiation source detection for national security.
The silicon pixel detector is a particle track detector using silicon as a detection material and is used for detecting tracks and determining high-energy particle energy. These energetic particles include particles resulting from nuclear decay, cosmic radiation, and from accelerator interactions. In order to detect radiation, the detector must interact with the substance and this interaction is recorded. The silicon pixel detector is formed by orderly arrays of pixel units, each pixel detector unit consists of a sensitive area with a sensing function and an outer end electron reading part, electron-hole pairs are generated when small ionized particles enter the sensitive area, drift towards two poles under the action of an external electric field, and then the current signals are processed through an outer end integrated circuit to obtain information such as energy, position and the like of the incident particles. The method has the advantages of high response speed, high sensitivity, easy integration and other excellent performances, and can be widely applied to the fields of X-ray detection, high-energy particle detection and the like.
With the continuous progress of science and technology, new detectors are continuously developed and applied to various industries. However, the pixel detector never leaves the first line of particle detection-closest to the center of the collision, the position resolution is highest and the design is the most accurate. The pixel detector re-represents the forefront of the particle detector field with its excellent spatial resolution and rapid temporal response capability. Because the pixel detector is closest to the particle collision point, it is required to have a strong radiation resistance. The pixel detector has a fine structure and faces a plurality of challenges, and the design and the manufacture of the pixel detector are complex and advanced. Because a pixel detector is composed of thousands of pixel unit arrays, the dead zone, dead zone and noise of the detector are multiplied, so that the effective working area of the detector and the signal-to-noise ratio of the detector are reduced.
Disclosure of Invention
The embodiment of the invention aims to provide a silicon pixel detector with a single-sided cathode in a spiral ring structure and an array thereof, so as to solve the problems of larger detector noise and reduced signal to noise ratio caused by larger effective area of the existing detector.
The technical scheme adopted by the embodiment of the invention is that the silicon pixel detector with the single-sided cathode in the spiral ring structure comprises an N-type high-resistance silicon substrate, a SiO 2 oxide layer is generated on the top surface of the N-type high-resistance silicon substrate, a P+ heavy-doped cathode spiral ring structure is formed on the SiO 2 oxide layer through etching and ion implantation, the P+ heavy-doped cathode spiral ring structure is in a planar spiral ring structure, a collecting cathode connected with the P+ heavy-doped cathode spiral ring structure is arranged at the central position of the P+ heavy-doped cathode spiral ring structure, and an n+ heavy-doped ion implantation layer is formed on the bottom surface of the N-type high-resistance silicon substrate through etching and ion implantation.
Further, the collecting cathode is formed by etching and ion implantation in the central position of the SiO 2 oxide layer on the top surface of the N-type high-resistance silicon substrate to form a P+ heavy-doped ion implantation layer, and forming a full etching area above the P+ heavy-doped ion implantation layer in a full etching way, and then coating a film to form a cathode spiral ring central aluminized layer;
the P+ heavy doping ion implantation layer is connected with the starting end of the P+ heavy doping cathode spiral ring structure, and the bottom of the cathode spiral ring center aluminized layer is contacted with the P+ heavy doping ion implantation layer.
Further, the collecting electrode has a square structure with dimensions of 15 μm×15 μm.
Furthermore, the P+ heavily doped cathode spiral ring structure takes a collecting cathode as an initial position, and starts to spirally extend to any side edge position of the SiO 2 oxide layer from the initial position in a square or polygonal shape outwards in a anticlockwise manner.
Further, an anode aluminum layer is plated on the n+ heavily doped ion implantation layer.
Furthermore, the N-type high-resistance silicon substrate adopts an N-type high-resistance silicon wafer, the thickness of the N-type high-resistance silicon wafer is 300-500 mu m, and the resistivity of the N-type high-resistance silicon wafer is 4-18 kΩ & cm.
Further, the thickness of the P+ heavily doped cathode spiral ring structure and the N+ heavily doped ion implantation layer is 1 μm.
The other technical scheme adopted by the embodiment of the invention is that the silicon pixel detector array with the single-sided cathode in a spiral ring structure is formed by adopting the silicon pixel detector with the single-sided cathode in the spiral ring structure.
The embodiment of the invention has the beneficial effects that by designing the structure of the P+ cathode, the collecting cathode connected with the P+ cathode is arranged at the center of the P+ cathode, the collecting cathode is very small, the size is 15 mu m multiplied by 15 mu m, the effective working area of the detector is reduced, the advantage of low capacitance of the detector is ensured, the junction capacitance of the detector is reduced while the detection efficiency of the detector is ensured, the noise of the detector is reduced, the signal to noise ratio is ensured, and the problems of larger noise and reduced signal to noise ratio of the detector caused by larger effective area of the existing detector are effectively solved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a diagram of a conventional square pixel detector and triangle pixel detector design.
Fig. 2 is a schematic cross-sectional view of a conventional pixel detector.
Fig. 3 (a) is a schematic diagram of an array of conventional triangular pixel detectors.
Fig. 3 (b) is a schematic diagram of an array of conventional square pixel detectors.
Fig. 4 is a schematic cross-sectional view of a silicon pixel detector with a single-sided cathode in a spiral ring configuration.
Fig. 5 is a three-dimensional front schematic view of a silicon pixel detector with a single-sided cathode in a spiral ring configuration.
Fig. 6 is an enlarged view of a portion of the p+ heavily doped cathode spiral ring structure of a silicon pixel detector with a spiral ring structure on a single-sided cathode.
Fig. 7 is a schematic diagram of a p+ heavily doped cathode spiral ring structure of a silicon pixel detector with a single-sided cathode in a spiral ring structure.
Fig. 8 is a three-dimensional front schematic view of a silicon pixel detector array with a single-sided cathode in a spiral ring configuration.
In the figure, the aluminum layer on the cathode 1, the cathode layer 2.P+ ion implantation, the high-resistance silicon substrate 3, the reverse n+ ion implantation layer 4, the aluminum layer on the anode 5, the silicon pixel detector unit 6, the cathode spiral ring center aluminum plating layer 7, the 8.P + heavy doping cathode spiral ring structure 9, the guard ring 10, the collecting cathode 11, the full etching area, the 12.N high-resistance silicon substrate 13.N+ heavy doping ion implantation layer 14, the anode aluminum layer 15, the SiO 2 oxide layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, a conventional square and triangular electrode-shaped silicon pixel detector unit is formed by ion implantation to form a P-type heavily doped cathode surface and an N-type heavily doped anode surface, and an aluminum layer 1 on the cathode is disposed on the P-type heavily doped cathode surface. As shown in fig. 2, which is a cross-sectional view of a conventional silicon pixel detector, it can be seen that the conventional silicon pixel detector is composed of a p+ ion implantation cathode layer 2, a reverse n+ ion implantation layer 4 and a high-resistance silicon substrate 3 located therebetween, wherein an aluminum layer 1 on the cathode is disposed on the p+ ion implantation cathode layer 2, an aluminum layer 5 on the anode is disposed on the surface of the reverse n+ ion implantation layer 4, and a PN junction is formed at the interface of P type and N type. The high-resistance silicon substrate 3 is an N-type high-resistance silicon wafer, the p+ ion implantation cathode layer 2 is heavily doped in the P type, the collecting anode region, namely the reverse n+ ion implantation layer 4, is a heavily doped region in the N type, and the concentration of the heavily doped region is far higher than that of the substrate. The p+ ion implantation cathode layer 2 and the reverse n+ ion implantation layer 4 have high doping concentration, a large number of carriers and a low resistance value, and the substrate is lightly doped and has a high resistance value. When reverse bias is applied, most of bias is obtained in the high-resistance silicon substrate 3 region, and under the effect of reverse bias, the electron concentration is reduced to be very low, and almost all of the whole high-resistance silicon substrate 3 region becomes a depletion layer.
As shown in fig. 3 (a) - (b), the design of the conventional silicon pixel detector unit 6 with a triangular design of the cathode surface and a square design of the cathode surface well solves the problem of the array, reduces the dead area of the detector, and is beneficial to the performance of the detector array. Capacitance is a sensitive factor in silicon detectors because it directly affects noise and crosstalk in detector operation, and the design of this structure is suitable for soft x-ray detection or in applications where the radiation environment is not too strong.
According to the embodiment of the invention, the high efficiency of the detector is ensured, the effective volume of the detector is kept unchanged, the capacitance of the detector is reduced by reducing the effective area of the electrode of the detector, the noise is reduced, and the signal-to-noise ratio is further improved.
The embodiment of the invention provides a silicon pixel detector with a single-sided cathode in a spiral ring structure, which is shown in fig. 4, and comprises an N-type high-resistance silicon substrate 12, wherein a SiO 2 oxide layer 15 with a certain thickness is grown on the top surface of the N-type high-resistance silicon substrate 12 through thermal oxidation, a P+ heavy-doped cathode spiral ring structure 8 is formed on the SiO 2 oxide layer 15 through etching and ion implantation, the P+ heavy-doped cathode spiral ring structure 8 is in a planar spiral ring structure, and a collecting cathode 10 connected with the P+ heavy-doped cathode spiral ring structure 8 is arranged in the center of the P+ heavy-doped cathode spiral ring structure 8. The bottom surface of the N-type high-resistance silicon substrate 12 is etched and ion-implanted to form an n+ heavy-doped ion implantation layer 13, an anode aluminum layer 14 is plated on the n+ heavy-doped ion implantation layer 13 and used as a collecting anode, and the anode aluminum layer 14 is used for applying bias voltage to the detector.
The collecting cathode 10 is formed by forming a P+ heavy doped ion injection layer through etching and ion injection in the center position of a SiO 2 oxide layer 15 generated on the top surface of an N-type high-resistance silicon substrate 12, forming a full etching area 11 above the P+ heavy doped ion injection layer through full etching, and then forming an aluminum plating film on the aluminum plating layer 7 at the center of the cathode spiral ring. The p+ heavily doped ion implantation layer is connected to the start end of the p+ heavily doped cathode spiral ring structure 8, and the bottom of the cathode spiral ring center aluminized layer 7 contacts with the p+ heavily doped ion implantation layer, as shown in fig. 6 and 4, the collecting cathode 10 in this embodiment has a square structure. The cathode spiral ring center aluminized layer 7 is formed by plating an aluminum film with a certain thickness on the full etching area 11 in a magnetron sputtering mode, etching the redundant aluminum film through an aluminum etching process, and reserving the aluminum film in the center area of the P+ heavy doped cathode spiral ring structure 8, wherein the cathode spiral ring center aluminized layer 7 plays a role in connecting a detector unit and an electronic readout integrated circuit.
The p+ heavily doped cathode spiral ring structure 8 takes the collecting cathode 10 as a starting position, and starts from the starting position to extend outwards and spirally to any side edge position of the SiO 2 oxide layer 15 in a anticlockwise square shape, as shown in fig. 5. Because the P+ heavy doping cathode spiral ring structure 8 adopts a square ring structure, the collecting cathode 10 is also designed into a square structure, and the distance between the collecting cathode 10 and each side of the innermost ring of the P+ heavy doping cathode spiral ring structure 8 is the same, so that the electric field can be more uniform. The shape of the p+ heavily doped cathode spiral ring structure 8 is not limited to square, but can be modified to other shapes, such as pentagonal, hexagonal, etc. polygons.
The N-type high-resistance silicon substrate 12 is an N-type high-resistance silicon wafer with the thickness of 300-500 mu m, silicon dioxide with a certain thickness is grown through thermal oxidation, and a designed detector pattern is copied to the oxidized N-type high-resistance silicon wafer through photoetching processes such as spin coating, exposure, development, etching, stripping and the like. By etching, only a thin oxide layer is reserved in the area of the cathode spiral ring design. And next, carrying out heavy doping P+ ion implantation, and implanting P+ type ions into the high-resistance silicon substrate below the thinner oxide layer to form a P+ heavy doping cathode spiral ring structure 8, wherein the doping concentration of the P+ heavy doping cathode spiral ring structure 8 is 1 multiplied by 10 18/cm-3, the doping concentration is far higher than that of an N type high-resistance silicon wafer, the resistivity of the N type high-resistance silicon wafer is 4-18 kΩ & cm, and the thickness of the P+ heavy doping cathode spiral ring structure 8 is about 1 mu m. The back surface of the N-type high-resistance silicon substrate 12 is etched to the bottom by a photolithography etching process, and then n+ ion heavy doping implantation is performed to form an n+ implantation layer, i.e., an n+ heavy doping ion implantation layer 13, the doping concentration of which is much higher than that of the N-type high-resistance silicon wafer, the doping concentration is 1×10 18/cm-3, and the thickness of the n+ heavy doping ion implantation layer 13 is about 1 μm.
The front surface adopts a spiral ring design, and provides the optimal electric potential field distribution for the detector. The collecting cathode 10 is very small, as shown in fig. 7, with dimensions 15 μm x 15 μm, ensuring the advantage of low capacitance of the detector. A bias voltage is applied to the anode aluminum layer 14 to fully deplete the sensitive region of the detector and create a potential gradient. When X-ray is incident, electron hole pairs are ionized, electrons are collected to the anode aluminum layer 14 along the drift channel under the action of an electric field, so that electric signals are generated, and the signals are screened and amplified through an electronic reading part at the outer end, so that the required information is obtained. As shown in FIG. 8, in the 3×3 array formed by the silicon pixel detector with the single-sided cathode in the spiral ring structure according to the embodiment of the invention, compared with the conventional detector array, the effective area of the cathode electrode is reduced, the capacitance is reduced, and the energy resolution of the detector is improved.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (5)
1. The silicon pixel detector with the single-sided spiral ring structure as a cathode is characterized by comprising an N-type high-resistance silicon substrate (12), wherein a SiO 2 oxide layer (15) is formed on the top surface of the N-type high-resistance silicon substrate (12), a P+ heavy-doped cathode spiral ring structure (8) is formed on the SiO 2 oxide layer (15) through etching and ion implantation, the P+ heavy-doped cathode spiral ring structure (8) is of a planar square spiral ring structure, a collecting cathode (10) connected with the P+ heavy-doped cathode spiral ring structure (8) is arranged at the central position of the P+ heavy-doped cathode spiral ring structure, and an n+ heavy-doped ion implantation layer (13) is formed on the bottom surface of the N-type high-resistance silicon substrate (12) through etching and ion implantation;
The collecting cathode (10) is designed into a square structure, and the distance between the collecting cathode (10) and each side of the innermost ring of the P+ heavy doped cathode spiral ring structure (8) is the same;
The collecting cathode (10) is a P+ heavy-doped ion implantation layer formed by etching and ion implantation in the central position of a SiO 2 oxide layer (15) on the top surface of an N-type high-resistance silicon substrate (12), and a full etching area (11) is formed above the P+ heavy-doped ion implantation layer by full etching, and then a cathode spiral ring central aluminized layer (7) is formed by coating a film;
The P+ heavy doping ion injection layer is connected with the starting end of the P+ heavy doping cathode spiral ring structure (8), and the bottom of the cathode spiral ring center aluminum plating layer (7) is contacted with the P+ heavy doping ion injection layer;
The P+ heavy doped cathode spiral ring structure (8) takes a collecting cathode (10) as a starting position, and starts anticlockwise and square from the starting position to extend outwards and spirally to the edge position of any side of the SiO 2 oxide layer (15);
An anode aluminum layer (14) is plated on the n+ heavy doping ion implantation layer (13).
2. A silicon pixel detector according to claim 1, characterized in that the collecting cathode (10) has a square structure with dimensions of 15 μm x 15 μm.
3. The silicon pixel detector according to claim 1 or 2, wherein the N-type high-resistance silicon substrate (12) is an N-type high-resistance silicon wafer, the thickness of which is 300-500 μm, and the resistivity of which is 4-18 kΩ -cm.
4. A silicon pixel detector according to claim 1 or 2, characterized in that the thickness of the p+ heavily doped cathode spiral ring structure (8) and the n+ heavily doped ion implantation layer (13) are each 1 μm.
5. A silicon pixel detector array with a single-sided spiral ring structure as the cathode, characterized in that the silicon pixel detector array with the single-sided spiral ring structure as the cathode is adopted in the invention of claim 1 or 2.
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2020
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