CN209896073U - Square spiral silicon drift detector - Google Patents
Square spiral silicon drift detector Download PDFInfo
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- CN209896073U CN209896073U CN201920424776.4U CN201920424776U CN209896073U CN 209896073 U CN209896073 U CN 209896073U CN 201920424776 U CN201920424776 U CN 201920424776U CN 209896073 U CN209896073 U CN 209896073U
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Abstract
The utility model discloses a square spiral silicon drift detector, which comprises a substrate with a front surface provided with a round n + collecting anode, a square spiral cathode and a front protection ring, wherein the square spiral cathode is distributed around the n + collecting anode, the width of the square spiral cathode is gradually widened from inside to outside, and the front protection ring is distributed around the spiral cathode; the back side of the substrate is provided with a back side electrode, an incident window and a back side protection ring, the incident window and the back side electrode are tightly connected and are both positioned in the back side protection ring, and the polarity of the back side electrode is a cathode. The width range of the square spiral cathode is 10-40 mu m, and the number of turns of the front protection ring is 3. The doping types of the n + collecting anode and the spiral cathode are opposite, but the doping concentration orders of magnitude are the same, the doping types and the doping concentration orders of the reverse electrode and the square spiral electrode are the same, and the doping types of the substrate and the n + collecting anode are the same. The n + collecting anode is doped borosilicate, and the square spiral cathode is doped phosphorus-silicon.
Description
Technical Field
The utility model belongs to the technical field of radiation resistance detector, a square spiral silicon drift detector is related to.
Background
The detectors are of various types, and mainly comprise a proportional counter, a scintillator detector, a gas detector and a semiconductor detector. The detection principle of the various detectors is different. The utility model discloses a radiation detector belongs to semiconductor detector. The radiation detector has wide application, and is mainly applied to basic scientific research, engineering detection and daily life detection. Such as deep space imaging, medical imaging, particle trajectory detection, radiation source detection. The principle behind the radiation being detected is that the substance being detected interacts with a detector and is recorded. The interaction process is mainly an ionization process, and electron-hole pairs are formed in the detector, so that the detection purpose is achieved.
The semiconductor detector consists of a positive electrode (anode), a negative electrode (cathode) and a semiconductor material. A silicon drift detector is one of the semiconductor detectors. The silicon drift detector can be designed into various shapes, and is mainly a circular spiral silicon drift detector, and the structure of the circular detector is shown in figure 1 and is formed by n+Anodes 1, p+The ring 2 and the n-type silicon 3 form a detector array as shown in fig. 2, and the detector array formed by the circular spiral silicon drift detector as seen in fig. 2 has too large array gap 4 and a non-compact structure, which results in low resolution of the detector array due to the shape defect of the detector array.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a square spiral silicon drift detector has solved the not compact problem of detector array structure that circular spiral silicon drift detector constitutes.
In order to solve the technical problem, the technical scheme adopted by the utility model is that the square spiral silicon drift detector comprises a substrate, wherein the front surface of the substrate is provided with a round n + collecting anode, a square spiral cathode and a front protection ring in the shape of a rounded rectangle, the square spiral cathode surrounds the n + collecting anode and is distributed, the width of the square spiral cathode is gradually widened from inside to outside, and the front protection ring surrounds the square spiral cathode and is distributed; the back surface of the substrate is provided with a back surface electrode, an incidence window and a back surface protection ring in a shape of a round-corner rectangle, the incidence window and the back surface electrode are closely connected and are both positioned in the back surface protection ring, and the polarity of the back surface electrode is a cathode.
Furthermore, the width range of the square spiral cathode is 10-40 mu m.
Further, the number of turns of the front protection ring is 3;
the interval between two adjacent circles of the front protection ring is equal to the interval between two outermost circles of the square spiral cathode.
Further, the n + collecting anode is doped with the opposite type of the square spiral cathode, but with the same order of doping concentration.
Furthermore, the doping type and the doping concentration order of the reverse electrode and the square spiral cathode are the same;
the substrate is of the same doping type as the n + collecting anode.
Further, the substrate is n-type silicon and has a doping concentration of 4 x 1011cm-3～2×1012cm-3；
The n + collecting anode is doped borosilicate with the doping concentration of 1016cm-3～1020cm-3；
The square spiral cathode is doped phosphorus-silicon with the doping concentration of 1016cm-3～1020cm-3。
Furthermore, four corners of the back electrode are provided with external circuit contact points with the polarity as a cathode.
The beneficial effects of the utility model are that, square spiral silicon drift detector provides the preparation method of square spiral silicon drift detector, and it is little that electric capacity is collected to obtained square spiral silicon drift detector, under the detector condition of same area, has enlarged effective area, makes the detector array compacter, compares and has littleer blind spot in circular spiral silicon drift room detector, and resolution ratio is high.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Figure 1 is a schematic diagram of a circular spiral silicon drift detector cell.
Figure 2 is a schematic diagram of a circular spiral silicon drift detector array.
Figure 3 is a schematic front view of a square spiral silicon drift detector cell.
Figure 4 is a schematic reverse side view of a square spiral silicon drift detector cell.
Figure 5 is a cross-sectional view of a square spiral silicon drift detector cell.
Figure 6 is a schematic diagram of a square spiral silicon drift detector array.
Fig. 7 is an enlarged schematic view of the front center of a square spiral silicon drift detector cell.
Fig. 8 is an enlarged schematic view of the upper right corner of the front face of a square spiral silicon drift detector cell.
FIG. 9 is an enlarged schematic view of the reverse top left corner of a square spiral silicon drift detector cell.
In the figure, 1.n+Anode, 2.p+Ring, 3. n-type silicon, 4. array gap, 5.n + collecting anode, 6. square spiral cathode, 7. back side guard ring, 8. incident window, 9. substrate, 10. front side guard ring, 11. external circuit contact point.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
A square spiral silicon drift detector is shown in figures 3-9 and comprises a substrate 9, and the front surface of the substrate 9The cathode structure is provided with a middle n + collecting anode 5, a square spiral cathode 6 and a front protection ring 10, wherein the square spiral cathode 6 is distributed around the middle n + collecting anode 5, the width of the square spiral cathode 6 is gradually widened from inside to outside, the width range is 10-40 mu m, and the front protection ring 10 is positioned outside the outermost ring of the square spiral cathode 6; the number of turns of the front protection ring 10 is 3, and the interval between two adjacent turns of the front protection ring is equal to the interval between two outermost turns of the spiral ring of the square spiral cathode 6; the n + collecting anode 5 is of opposite doping type to the square spiral cathode 6, but of the same order of doping concentration. The reverse side of the substrate 9 is provided with a reverse side protection ring 7, an incident window 8 and a reverse side electrode, the reverse side protection ring 7 and the front side protection ring 10 are in a rounded rectangle shape, the equal distance between the two rings is ensured, and the dead zone is reduced. The incident window 8 and the back electrode are closely connected and are positioned in the back guard ring 7, the incident window 8 is made of a silicon substrate and is used for receiving signals to be measured, the doping types and the doping concentration orders of the back electrode and the square spiral cathode 6 are the same, the doping types of the substrate 9 and the n + collecting anode 5 are the same, and the doping concentration of the substrate 9 is far lower than that of the n + collecting anode 5. The back electrode is a cathode, the substrate 9 is a silicon material, the n + collecting anode 5 is doped silicon, the doping element is boron, and the doping concentration is 1016cm-3～1020cm-3(ii) a The square spiral cathode 6 is doped silicon, the doping element is phosphorus, and the doping concentration is 1016cm-3～1020cm-3。
The width of the square spiral cathode 6 is gradually widened, so that a shorter charge collection channel is formed, rapid charge collection is facilitated, the width range is 10-40 mu m, the width range is the optimal width range obtained by optimizing a drift channel, and the efficiency of the detector is reduced when the width of the square spiral cathode 6 is too large or too small. The front guard ring 10 is located outside the outermost turn of the square spiral cathode 6 to prevent breakdown and reduce leakage current, the number of turns is less than 3, which easily causes breakdown, and more than 3 causes too much leakage current, which affects the performance of the detector. The interval between two adjacent circles is equal to the interval between two outermost circles of spiral rings of the square spiral cathode 6, and the incidence window 8 and the reverse electrode are arranged in the reverse protection ring 7, so that the PN junction is prevented from being broken down due to overlarge current.
And external circuit contact points 11 with the polarity of cathode are arranged at the four corners of the back electrode and are used for connecting an external circuit.
The utility model discloses have a little middle n + and collect positive pole 5 to reduce and collect electric capacity, reduce electronic noise, reach higher resolution ratio. The n + collector anode 5 is surrounded by a square spiral cathode 6, and a voltage applied across the square spiral cathode 6 creates an electric field that causes electrons to drift to the n + collector anode 5. The voltage applied at the opposite electrode serves to deplete the substrate 9 and pull carriers towards the n + collecting anode 5. The substrate 9 (sensitive region of the detector) is of the same doping type as the n + collecting anode 5, but the doping concentration of the substrate 9 is much lower than that of the n + collecting anode 5, and the doping concentration of the substrate 9 is 4 x 1011cm-3～2×1012cm-3N + collecting anode 5 and square spiral cathode 6 having a doping concentration of 1016cm-3～1020cm-3The doping concentration of the substrate 9 is too low to function as an electrode, and too high to lose the semiconductor characteristics. In order to form the electrodes, the semiconductor material corresponds to the metal at a high doping concentration, which is generally 10, as the case may be16cm-3～1020cm-3Insofar as the doping concentration of the n + collecting anode 5 and the square spiral cathode 6 is too low to form electrodes, the doping concentration is too high and the doping atoms are too close together so that their impurity levels merge into one energy band, resulting in no longer having the characteristics of a semiconductor.
The square spiral silicon drift detector of the utility model has the advantages that the manufacturing process can be summarized into oxidation, etching, ion implantation and aluminizing. The oxidation adopts gettering oxidation, so that the purity of silicon is higher.
The preparation method of the square spiral silicon drift detector comprises the following specific steps:
step S1, preparing a mask plate according to the structural design of the square spiral silicon drift detector, wherein the mask plate comprises a marking mask plate, a P injection mask plate, an N injection mask plate, a CUT mask plate and an aluminum electrode mask plate;
step S2, marking the substrate 9, because the subsequent process steps are carried out layer by layer, the steps are connectedThe mark is used for facilitating subsequent alignment; marking, sequentially carrying out glue homogenizing, drying, aligning a mark mask plate, exposing, developing, checking and post-drying, and etching silicon dioxide in a mark area to
Left and right, finally, cleaning the photoresist;
step S3, P injection etching: sequentially carrying out glue homogenizing, drying, aligning P, injecting a mask plate, exposing, developing, checking and post-drying, covering the regions except the square spiral cathode 6, the back protection ring 7, the incidence window 8, the front protection ring 10 and the back electrode with photoresist, and etching silicon dioxide in the regions of the square spiral cathode 6, the back protection ring 7, the incidence window 8, the front protection ring 10 and the back electrode to the extent that the silicon dioxide is etched to the regions
After etching, heavily doped P + ions are injected to form a square spiral cathode 6, a reverse side protection ring 7, an incidence window 8, a front side protection ring 10 and a reverse side electrode, and finally photoresist cleaning is carried out;
step S4, N injection etching: sequentially carrying out glue homogenizing, drying, mask plate injection aiming at N, exposure, development, inspection and post-drying, then etching the region of the N + collecting anode 5, and injecting heavily doped N + ions after etching is finished to form an N + collecting anode 5;
step S5, activating the injected N + ions and P + ions through annealing, and mainly performing acid washing, metal ion removal, oxide layer removal and annealing in an oxidation furnace;
step S6, CUT etching: preparing for subsequent aluminizing, namely, directly contacting the aluminum with the silicon, and carrying out glue homogenizing, drying, aligning a CUT mask plate, exposing, developing, inspecting and post-drying on the N+Covering the collecting anode 5 and the external circuit contact 11 area with photoresist, etching the silicon dioxide on the surface of the substrate 9 to the bottom, and finally cleaning the photoresist;
step S7, aluminum plating: aluminizing by using a magneto-optical sputtering instrument, and aluminizing the n + collecting anode 5 and the external circuit contact 11 area through sheet loading, vacuum pumping and aluminizing;
step S8, aluminum etching, coating the needed aluminum layer with photoresist, exposing, developing, checking, post-baking, exposing the aluminum layer, etching the aluminum layer with etching liquid, and finally cleaning the photoresist.
And (4) cleaning the photoresist, namely removing the photoresist by using a stripping solution, and further cleaning by using concentrated sulfuric acid.
The working principle is as follows: an electric field is applied to the front surface and the back surface (incidence surface) of the detector to form an electronic drift channel. When radiation or particles enter from the incident surface, they react with the semiconductor material to form electron-hole pairs, which are collected by the electrodes via the drift channels. A current, i.e. a signal, is formed which can be measured by an external circuit for measurement purposes.
The utility model discloses a detector is square helical structure, proposes on circular helical structure's basis. The circular spiral structure detector units have dead zones when forming the detector array, so that the detector array is not compact. The square spiral structure detector can solve the problem and improve the compactness of the array. The utility model relates to a spiral width widens gradually, can make the electron drift passageway shorter, is favorable to the charge to be collected, improves detector collection efficiency.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (7)
1. The square spiral silicon drift detector is characterized by comprising a substrate (9), wherein the front surface of the substrate (9) is provided with a round n + collecting anode (5), a square spiral cathode (6) and a front surface protection ring (10) in a round rectangle shape, the square spiral cathode (6) is distributed around the n + collecting anode (5), the width of the square spiral cathode (6) is gradually widened from inside to outside, and the front surface protection ring (10) is distributed around the square spiral cathode (6); the reverse side of the substrate (9) is provided with a reverse side electrode, an incidence window (8) and a reverse side protection ring (7) with a round-corner rectangular shape, the incidence window (8) and the reverse side electrode are closely connected and are both positioned in the reverse side protection ring (7), and the polarity of the reverse side electrode is a cathode.
2. The square spiral silicon drift detector according to claim 1, wherein the width of the square spiral cathode (6) is in the range of 10-40 μm.
3. The square spiral silicon drift detector of claim 1, wherein the number of turns of the front guard ring (10) is 3;
the interval between two adjacent circles of the front protection ring (10) is equal to the interval between two outermost circles of the square spiral cathode (6).
4. The square spiral silicon drift detector of claim 1, wherein the n + collecting anode (5) and the square spiral cathode (6) are of opposite doping type but of the same order of doping concentration.
5. The square spiral silicon drift detector of claim 1, wherein the counter electrode and the square spiral cathode (6) have the same doping type and doping concentration order;
the substrate (9) and the n + collecting anode (5) are of the same doping type.
6. The square-spiral silicon drift detector of claim 1, wherein the substrate (9) is n-type silicon with a doping concentration of 4 x 1011cm-3～2×1012cm-3；
The n + collecting anode (5) is doped borosilicate with the doping concentration of 1016cm-3～1020cm-3；
The square spiral cathode (6) is doped phosphorus-silicon with the doping concentration of 1016cm-3～1020cm-3。
7. The square spiral silicon drift detector according to any one of claims 1 to 6, wherein the four corners of the back electrode are provided with external circuit contacts (11) with the polarity of cathode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920424776.4U CN209896073U (en) | 2019-04-01 | 2019-04-01 | Square spiral silicon drift detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920424776.4U CN209896073U (en) | 2019-04-01 | 2019-04-01 | Square spiral silicon drift detector |
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| CN209896073U true CN209896073U (en) | 2020-01-03 |
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| TR01 | Transfer of patent right |
Effective date of registration: 20220214 Address after: 410205 office 310, third floor, 101, complex building, 1689 Yuelu West Avenue, high tech Development Zone, Changsha, Hunan Patentee after: Hunan maitanxin Semiconductor Technology Co.,Ltd. Address before: 411000 4th floor, building 10, Zone C, innovation and entrepreneurship Park, No. 9, Shuangyong Road, high tech Zone, Xiangtan City, Hunan Province Patentee before: HUNAN ZHENGXIN MICROELECTRONIC DETECTOR Co.,Ltd. |
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Effective date of registration: 20220401 Address after: 411104 floor 4, building 10, Zone C, innovation and entrepreneurship Park, No. 9, Shuangyong Road, high tech Zone, Xiangtan City, Hunan Province Patentee after: HUNAN ZHENGXIN MICROELECTRONIC DETECTOR Co.,Ltd. Address before: 410205 office 310, third floor, 101, complex building, 1689 Yuelu West Avenue, high tech Development Zone, Changsha, Hunan Patentee before: Hunan maitanxin Semiconductor Technology Co.,Ltd. |