CN211125665U - Hexagonal mutual buckling type electrode three-dimensional silicon detector - Google Patents
Hexagonal mutual buckling type electrode three-dimensional silicon detector Download PDFInfo
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- CN211125665U CN211125665U CN202020089373.1U CN202020089373U CN211125665U CN 211125665 U CN211125665 U CN 211125665U CN 202020089373 U CN202020089373 U CN 202020089373U CN 211125665 U CN211125665 U CN 211125665U
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Abstract
The utility model discloses a three-dimensional silicon detector of hexagon each other knot formula electrode, including the isolation silicon body of hexagonal prism form, the central axial of isolation silicon body is equipped with central electrode, six sides of isolation silicon body are equipped with first slot electrode and the second slot electrode of concatenation from top to bottom, first slot electrode is formed by two C shape slot electrode buckles, the top of first slot electrode and central electrode is equipped with the metal contact layer, isolation silicon body top between the metal contact layer is equipped with the silica protective layer, the bottom of second slot electrode, central electrode and isolation silicon body is equipped with the silica protective layer; the utility model discloses the three-dimensional silicon detector blind area of hexagon each other knot formula electrode of preparation is little, inside electric field distribution is even, the charge collection performance is good, and the unit independence between the detection unit is good, and detection efficiency is high, and is high to silicon wafer's utilization ratio.
Description
Technical Field
The utility model belongs to the technical field of high energy physics and celestial body physics, a three-dimensional silicon detector of hexagon each other knot formula electrode is related to.
Background
In 1997, S.Parker et al pioneer the first generation of three-dimensional columnar electrode silicon detectors, a high electric field region exists near an electrode of the detector, a low electric field region exists at the symmetric center of the electrode, and the silicon detectors are limited when used in a high radiation environment due to uneven distribution of the electric field; in order to further enhance the radiation resistance of the silicon detector, scientists in the national laboratory of brugkian hei in 2009 provided a novel three-dimensional silicon detector, namely a three-dimensional trench electrode silicon detector.
However, as the bottom of the three-dimensional trench electrode silicon detector is provided with a dead zone of an unetched electrode with the thickness of 10% -30%, the electric field is extremely low, the electric field distribution is uneven, the voltage cannot be exhausted in the dead zone, electrons and holes move slowly or even cannot move in the dead zone, so that the movement time of the electrons and the holes is prolonged, and the electrons and the holes are easily trapped by traps under the condition of strong radiation, so that the electric signal is attenuated; the dead zone can not directionally collect electrons and holes, the detection function of the zone is basically lost, particles can only enter from a single surface when the three-dimensional groove electrode silicon detector works, the detection efficiency of the silicon detector is low, and the independence of the silicon detector units is deteriorated due to the dead zone when the detection units form an array.
Disclosure of Invention
In order to achieve the above object, the utility model provides a three-dimensional silicon detector of hexagon each other knot formula electrode has eliminated "blind spot" of three-dimensional slot electrode silicon detector bottom through two-sided etching process for the particle can be collected to the silicon detector two-sided, has improved the unit independence and the detection efficiency of silicon detector.
The utility model adopts the technical scheme that the three-dimensional silicon detector of hexagon interlockable electrode comprises an isolation silicon body in a hexagonal prism shape, wherein a central electrode is etched in a central axial direction of the isolation silicon body in a penetrating way, a first groove electrode is etched on six side surfaces of the isolation silicon body from top to bottom, a second groove electrode is etched on the six side surfaces of the isolation silicon body from bottom to top, the first groove electrode is spliced with the second groove electrode, the first groove electrode is formed by two C-shaped groove electrode buckles, and an unetched S-shaped isolation silicon body is left at the joint of the two C-shaped groove electrodes;
the bottom surfaces of the second trench electrode, the isolation silicon body and the central electrode are covered with a silicon dioxide protective layer;
the top surfaces of the first trench electrode and the central electrode are covered with metal contact layers, and the isolation silicon body between the first trench electrode and the central electrode is covered with a silicon dioxide protective layer which has the same height as the metal contact layers.
Further, the total height of the isolation silicon body is 300-500 μm, the height of the first trench electrode is 10% of the total height of the isolation silicon body, the height of the second trench electrode is 90% of the total height of the isolation silicon body, the wall thicknesses of the first trench electrode and the second trench electrode are both 10 μm, the wall thickness of the S-shaped isolation silicon body is 3-4 μm, and the thicknesses of the silicon dioxide protective layer and the metal contact layer are both 1 μm.
Furthermore, the side length of the cross section of the central electrode is 5 μm, the side edge of the cross section of the central electrode is parallel to the side edge of the top surface of the first trench electrode, and the distance between the corner of the central electrode and the corner of the first trench electrode is 50 μm.
Further, the center electrode is constituted by the following process: firstly, a hexagonal prism is penetrated and etched from top to bottom at the central axis of the isolation silicon body, then boron is diffused and doped on the inner side wall of the hexagonal prism, and finally polycrystalline silicon is filled in the hexagonal prism.
Further, the first trench electrode and the second trench electrode are formed by: firstly, etching a groove on six side surfaces of the isolation silicon body, then diffusing and doping phosphorus on the inner wall of the groove, and finally filling polysilicon in the groove.
Furthermore, the heavy doping concentration of the central electrode, the first trench electrode and the second trench electrode is 1 × 1019cm-3The isolation silicon body is composed of lightly doped borosilicate baseHas a light doping concentration of 1 × 1012cm-3。
The utility model has the advantages that: 1. the utility model adopts the double-sided etching process to make the groove electrode penetrate through the whole silicon detector, thereby eliminating dead zones, enabling the electric field inside the silicon detector to be uniformly distributed and improving the charge collection performance of the silicon detector; 2. the trench electrode covers the whole silicon detector unit, so that the unit independence of the silicon detector unit is improved when the silicon detector unit forms an array; 3. the utility model discloses can two-sided receipt particle at the during operation, detection efficiency improves, and can seamless butt joint between the silicon detector unit when constituteing the array, and peripheral groove limit can be shared to adjacent silicon detector unit, makes silicon wafer's utilization ratio improve, has practiced thrift the cost, has improved production efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a structural diagram of a silicon detector unit of the present invention.
Fig. 2 is a top view of the silicon detector unit of the present invention.
Fig. 3 is a bottom view of the silicon detector unit of the present invention.
Fig. 4 is an arrangement diagram of the silicon detector unit of the present invention.
Fig. 5 is an effect diagram of the embodiment of the present invention.
Fig. 6 is a graph comparing the effects of the embodiments of the present invention.
In the figure, 1, a first trench electrode, 2, an S-shaped isolation silicon body, 3, a second trench electrode, 4, a central electrode, 5, an isolation silicon body, 6, a metal contact layer, 7, a silicon dioxide protective layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The hexagonal mutual buckling type electrode three-dimensional silicon detector comprises a hexagonal prism-shaped isolation silicon body 5, a central electrode 4 is etched in a single-sided penetrating mode from top to bottom at the central shaft of the isolation silicon body 5, a first groove electrode 1 is etched on six side faces of the isolation silicon body 5 from top to bottom, a second groove electrode 3 is etched on six side faces of the isolation silicon body 5 from bottom to top, the first groove electrode 1 is spliced with the second groove electrode 3, the first groove electrode 1 is formed by buckling two C-shaped groove electrodes, and an unetched S-shaped isolation silicon body 2 is reserved at the buckling position of the two C-shaped groove electrodes; the bottom surfaces of the second trench electrode 3, the central electrode 4 and the isolation silicon body 5 are covered with a silicon dioxide protective layer 7, the top surfaces of the first trench electrode 1 and the central electrode 4 are covered with a metal contact layer 6, the isolation silicon body 5 between the first trench electrode 1 and the central electrode 4 is covered with the silicon dioxide protective layer 7, the metal contact layer 6 covered on the top surfaces of the first trench electrode 1 and the central electrode 4 is an aluminum electrode contact layer, and the thicknesses of the aluminum electrode contact layer and the silicon dioxide protective layer 7 are both 1 micrometer.
When the central electrode 4 is prepared, firstly, a hexagonal prism is penetrated and etched at the central shaft of the isolation silicon body 5, boron is diffused and doped on the inner side wall of the hexagonal prism, and then polycrystalline silicon is filled in the hexagonal prism; when the first trench electrode 1 and the second trench electrode 3 are prepared, trenches are etched on six side faces of the isolation silicon body 5, and polysilicon is filled after phosphorus is diffused and doped on the inner walls of the trenches.
The central electrode 4 is used as a cathode of the silicon detector to collect holes in the detection process, the first trench electrode 1 and the second trench electrode 3 are used as anodes of the silicon detector to collect electrons in the detection process, the doping concentrations of the central electrode 4, the first trench electrode 1 and the second trench electrode 3 are the same, and the heavy doping concentrations of the central electrode 4, the first trench electrode 1 and the second trench electrode 3 are all 1 × 1019cm-3The isolation silicon body 5 is formed by lightly doped boron silicon base, and the lightly doped concentration of the isolation silicon body 5 is 1 × 1012cm-3。
The height of the isolation silicon body 5 is 300-500 mu m, the height of the first trench electrode 1 is 10% of the height of the isolation silicon body 5, the height of the second trench electrode 3 is 90% of the height of the isolation silicon body 5, the wall thickness of the first trench electrode 1 and the wall thickness of the second trench electrode 3 are both 10 mu m, and the wall thickness of the S-shaped isolation silicon body 2 is 3-4 mu m; the first trench electrode 1 is as high as the S-shaped isolation silicon body 2, the height of the S-shaped isolation silicon body 2 is increased, the area of the side surface of the isolation silicon body 5 which is not covered by the two C-shaped trench electrodes is increased, however, the S-shaped isolation silicon body 2 is not etched and heavily doped, and the charge collection efficiency is not high, so the height of the S-shaped isolation silicon body 2 is reduced as much as possible; the height and the width of the S-shaped isolation silicon body 2 are too small, and the isolation silicon body 5 between adjacent silicon detector units cannot be supported, so that the mechanical instability of the silicon detector is caused, and the use of the silicon detector is influenced; therefore, the utility model sets the height of the S-shaped isolation silicon body 2 as 10% of the height of the isolation silicon body 5, and sets the width as 3-4 μm, so that the contact area of the S-shaped isolation silicon body 2 between adjacent silicon detector units can be reduced as much as possible under the condition of ensuring the mechanical stability of the silicon detector, and the charge collection capability and the unit independence of the silicon detector are improved; simultaneously the utility model discloses set the isolation silicon body between two C shape slot electrodes to S shape lock joint, and do not adopt the orthoscopic to connect, S shape lock joint makes the carrier that arouses the production after the high energy particle incident can not produce induced charge on adjacent unit electrode almost, disturbs induced charge promptly, has improved silicon detector' S unit independence, makes the testing result more accurate.
The side length of the cross section of the central electrode 4 is 5 micrometers, the side edge of the cross section of the central electrode 4 is parallel to the side edge of the top surface of the first trench electrode 1, the distance between the corner of the central electrode 4 and the corner of the first trench electrode 1 is 50 micrometers, the distance between the center of the central electrode 4 and the center of the trench electrode is reduced, the area ratio of an effective detection region of the silicon detector can be reduced, the increase of the center distance can correspondingly increase the drift distance of carriers excited in the silicon detector by incident particles, so that the carriers can be easily captured by defect energy levels generated by irradiation during drift, the charge collection rate is reduced, the radiation resistance of the silicon detector is further reduced, and the reliability of the silicon detector used in a high radiation environment is reduced; the utility model discloses establish the interval between central electrode 4 and the 1 turning of first slot electrode into 50 μm, under the effective detection area's of assurance silicon detector condition, reduced the drift distance of carrier, improved silicon detector's charge collection efficiency and radiation resistance ability.
The three-dimensional groove electrode silicon detector has 'dead zone' because the isolation silicon body 5 between the groove electrode and the central electrode 4 can drop to cause the failure of the etching process after the single-side etching from top to bottom, so only a part of the peripheral groove electrode and the central electrode can be etched, the etching can not be penetrated in the height direction, and the 'dead zone' is left at the bottom of the silicon detector, the embodiment of the utility model adopts the double-side etching process, the S-shaped isolation silicon body 2 is arranged between the C-shaped groove electrodes to connect the adjacent detector units or the silicon body of the silicon wafer, so as to prevent the middle isolation silicon body 5 from dropping, eliminate the 'dead zone' at the bottom of the three-dimensional groove electrode silicon detector, ensure the electric field inside the silicon detector to be uniformly distributed, shorten the moving time of electrons and holes inside the silicon detector, reduce the probability of being captured by defects, and improve the charge collection performance and radiation resistance performance of the silicon detector, meanwhile, when the silicon detector works, particles can enter from two sides, so that the detection efficiency of the silicon detector is improved.
Example 1
The structure of the hexagonal interlocking electrode silicon detector is shown in fig. 1-3, and comprises a hexagonal prism-shaped isolation silicon body 5, wherein a hexagonal prism penetrates through the central axis of the isolation silicon body 5 from the top surface to the bottom surface single surface, the inner side wall of the hexagonal prism is diffused and doped with boron and then is filled with polycrystalline silicon to form a central electrode 4, grooves are etched on six side surfaces of the isolation silicon body 5, the inner wall of each groove is diffused and doped with phosphorus and then is filled with polycrystalline silicon to form a first groove electrode 1 and a second groove electrode 3, the bottom surfaces of the isolation silicon body 5, the central electrode 4 and the second groove electrode 3 are covered with a silicon dioxide protective layer 7, the top surfaces of the first groove electrode 1 and the central electrode 4 are covered with metal contact layers 6, and the silicon dioxide protective layer 7 is covered on the isolation silicon body; the first groove electrode 1 is formed by buckling two C-shaped groove electrodes, an unetched S-shaped isolation silicon body 2 is left at the joint of the two C-shaped groove electrodes, and the S-shaped isolation silicon body 2 is 3 micrometers.
The height of the isolation silicon body 5 is 300 mu m, the heights of the first trench electrode 1 and the S-shaped isolation silicon body 2 are 30 mu m, the height of the second trench electrode 3 is 270 mu m, the wall thicknesses of the first trench electrode 1 and the second trench electrode 3 are both 10 mu m, the first trench electrode 1 and the second trench electrode 3 are anodes of a silicon detector and collect electrons in the detection process, the side length of the cross section of the central electrode 4 is 5 mu m, the central electrode 4 is a cathode of the silicon detector and collects holes in the detection process, and the heavy doping concentrations of the first trench electrode 1 and the second trench electrode 3 are both 1 × 1019cm-3。
An isolating silicon body 5 between the trench electrode and the central electrode 4 separates the anode and the cathode of the silicon detector, the corner of the central electrode 4 is spaced from the corner of the first trench electrode 1 by 50 μm, the isolating silicon body 5 and the S-shaped isolating silicon body 2 are both composed of lightly doped borosilicate base, and the doping concentration is 1 × 1012cm-3(ii) a The trench electrode, the isolation silicon body 5 and the central electrode 4 form a PIN type homojunction, and the PN junction is located near the trench electrode, so that the depletion voltage of the silicon detector is lower, and the silicon detector is not easy to break down.
The top of the first trench electrode 1 and the top of the central electrode 4 are covered with aluminum electrode contact layers with the thickness of 1 mu m, the aluminum electrode contact layers connect the anode and the cathode of the silicon detector with bias voltage, the anode is connected with a bias voltage anode, the cathode is connected with a bias voltage cathode, the isolation silicon body 5 between the aluminum electrode contact layers is covered with a silicon dioxide protective layer 7 with the thickness of 1 mu m, the bottom surfaces of the central electrode 4, the second trench electrode 3 and the isolation silicon body 5 are also covered with the silicon dioxide protective layer 7 with the thickness of 1 mu m, and the anode and the cathode can be isolated to prevent short circuit.
As shown in FIG. 4, the embodiment of the present invention provides a detection unit, which is arranged as a silicon detector, wherein the adjacent detection units share a trench electrode sidewall, so that the detection units are seamlessly butted with each other, the silicon detector has a compact structure, the utilization rate of silicon wafers is high, and the cost can be saved.
Example 2
The following dimensions of the silicon detector were modified: the height of the isolation silicon body 5 is 500 μm, the height of the first trench electrode 1 and the S-shaped isolation silicon body 2 is 50 μm, the height of the second trench electrode 3 is 450 μm, the wall thickness of the S-shaped isolation silicon body 2 is 4 μm, and other structures of the silicon detector are the same as those of embodiment 1.
The silicon detectors prepared in the embodiments 1 to 2 are used for detecting incident particles, and according to the detection results, enough carriers need to be excited after the incident particles enter the silicon detectors, and a good electrical signal can be obtained only when the incident particles are influenced by interface charges, and the carriers generated by the incident particles are easily influenced by the charges of the upper and lower interfaces of the silicon detectors due to the excessively small height of the silicon detectors, so that the electrical signals detected by the silicon detectors are weak and are not beneficial to the detection of the incident particles; in order to improve the position resolution and the energy resolution of the silicon detector, the height of the silicon detector needs to be properly adjusted, and the detection performance of the silicon detector is better when the height of the silicon detector is 300-500 mu m.
Example 3
The size and the position of each structure in the detection unit of the embodiment 1 are not changed, the notches of the two C-shaped groove electrodes are only set to be linear, the connecting line of the notches and the connecting line of the center electrode 4 are linear, and linear openings are reserved at the joint of the two C-shaped groove electrodes after splicing.
Example 4
The size and the position of each structure in the detection unit of the embodiment 1 are not changed, the notches of the two C-shaped groove electrodes are only set to be inclined linear notches, and parallel inclined openings are reserved at the joint of the two C-shaped groove electrodes after splicing.
A single mip (maximum intensity ionization) is vertically incident to one unit of the silicon detectors prepared in the embodiments 1, 3 and 4, induced currents are collected in adjacent units of the detection unit, the obtained induced currents are interference currents, the interference currents are smaller, the energy resolution of the detectors is better, a proportion distribution field and an electric field distribution of the silicon detectors prepared in the embodiments are obtained through simulation, interpolation fitting is performed by using simulation results, specific interference current is obtained through programming integral calculation, i-t curves of the interference currents are prepared as shown in fig. 5, and the difference of the curves is displayedDifferent from the logarithm of the base 10 on the ordinate of fig. 5 as shown in fig. 6, the specific gravity distribution field of the silicon detector prepared in example 1 is much smaller than those prepared in examples 3 and 4, and there are several orders of magnitude difference therebetween; according to Ramo theorem i-q.vdr·EwIt can be known that the charge q of the carrier is constant and the drift velocity v of the carrier is constantdrIn relation to the internal electric field intensity of the silicon detector, the internal electric field intensities of the silicon detectors prepared in examples 1, 3 and 4 are not greatly different, so that the magnitude of the interference current i is only related to the specific gravity distribution field inside the silicon detector, and in combination with fig. 6, the interference current detected by the adjacent cells of the silicon detector cell prepared in example 1 is the smallest when particles are incident, and the cell independence among the detection cells is the best.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (6)
1. The hexagonal mutual buckling type electrode three-dimensional silicon detector is characterized by comprising a hexagonal prism-shaped isolation silicon body (5), wherein a central electrode (4) is etched in a penetrating manner in the axial direction of the center of the isolation silicon body (5), first trench electrodes (1) are etched on six side faces of the isolation silicon body (5) from top to bottom, second trench electrodes (3) are etched on the six side faces of the isolation silicon body (5) from bottom to top, the first trench electrodes (1) are spliced with the second trench electrodes (3), the first trench electrodes (1) are formed by buckling two C-shaped trench electrodes, and unetched S-shaped isolation silicon bodies (2) are reserved at the clamping positions of the two C-shaped trench electrodes;
the bottom surfaces of the second trench electrode (3), the isolation silicon body (5) and the central electrode (4) are covered with a silicon dioxide protective layer (7);
the top surfaces of the first trench electrode (1) and the central electrode (4) are covered with a metal contact layer (6), a silicon dioxide protective layer (7) covers the isolation silicon body (5) between the first trench electrode (1) and the central electrode (4), and the silicon dioxide protective layer (7) and the metal contact layer (6) are equal in height.
2. The hexagonal mutual-buckled electrode three-dimensional silicon detector as claimed in claim 1, wherein the total height of the isolation silicon body (5) is 300 μm to 500 μm, the height of the first trench electrode (1) is 10% of the total height of the isolation silicon body (5), the height of the second trench electrode (3) is 90% of the total height of the isolation silicon body (5), the wall thickness of the first trench electrode (1) and the wall thickness of the second trench electrode (3) are both 10 μm, the wall thickness of the S-shaped isolation silicon body (2) is 3 μm to 4 μm, and the thickness of the silicon dioxide protective layer (7) and the metal contact layer (6) are both 1 μm.
3. A hexagonal mutual buckled electrode three-dimensional silicon detector as claimed in claim 1, characterized in that the side of the cross section of the central electrode (4) is 5 μm, the side of the cross section of the central electrode (4) is parallel to the side of the top surface of the first trench electrode (1), and the corner of the central electrode (4) is 50 μm apart from the corner of the first trench electrode (1).
4. The hexagonal interlocking electrode three-dimensional silicon detector according to claim 1, characterized in that the central electrode (4) is constituted by the following process: firstly, the hexagonal prism is penetrated and etched from top to bottom at the central axis of the isolation silicon body (5), then boron is diffused and doped on the inner side wall of the hexagonal prism, and finally, polycrystalline silicon is filled in the hexagonal prism.
5. The hexagonal inter-buckled electrode three-dimensional silicon detector according to claim 1, characterized in that the first trench electrode (1) and the second trench electrode (3) are formed by the following process: firstly, etching grooves on six side surfaces of the isolation silicon body (5), then diffusing and doping phosphorus on the inner walls of the grooves, and finally filling the grooves with polysilicon.
6. The hexagonal mutual buckled electrode three-dimensional silicon detector according to claim 1, wherein the heavily doped concentrations of the central electrode (4), the first trench electrode (1) and the second trench electrode (3) are all 1 × 1019cm-3The isolation silicon body (5) is formed by lightly doped boron-silicon base, and the lightly doped concentration of the isolation silicon body (5) is 1 × 1012cm-3。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111146298A (en) * | 2020-01-16 | 2020-05-12 | 湘潭大学 | Hexagonal mutual buckling type electrode three-dimensional silicon detector |
| CN111146298B (en) * | 2020-01-16 | 2024-10-29 | 湘潭大学 | Hexagonal inter-buckling electrode three-dimensional silicon detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111146298A (en) * | 2020-01-16 | 2020-05-12 | 湘潭大学 | Hexagonal mutual buckling type electrode three-dimensional silicon detector |
| CN111146298B (en) * | 2020-01-16 | 2024-10-29 | 湘潭大学 | Hexagonal inter-buckling electrode three-dimensional silicon detector |
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