CN214956900U - Three-dimensional spherical electrode detector for laser drilling - Google Patents
Three-dimensional spherical electrode detector for laser drilling Download PDFInfo
- Publication number
- CN214956900U CN214956900U CN202121717974.3U CN202121717974U CN214956900U CN 214956900 U CN214956900 U CN 214956900U CN 202121717974 U CN202121717974 U CN 202121717974U CN 214956900 U CN214956900 U CN 214956900U
- Authority
- CN
- China
- Prior art keywords
- heavily doped
- type heavily
- detector
- type
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Measurement Of Radiation (AREA)
Abstract
The utility model belongs to the technical field of semiconductor detectors and discloses a laser drilling three-dimensional spherical electrode detector, wherein an N-type heavily doped anode is doped in the middle of the upper end of an N-type lightly doped silicon substrate, and a plurality of P-type heavily doped upper surface rings which are arranged at equal intervals are doped outside the N-type heavily doped anode; the bottom of the N-type lightly doped silicon substrate is provided with a P-type heavily doped cathode, the P-type heavily doped cathode is provided with a P-type heavily doped ring and a P-type heavily doped surface, the P-type heavily doped ring is provided with a plurality of heavily doped rings which are arranged at equal intervals, and the P-type heavily doped surface is positioned at the bottom of the P-type heavily doped ring. The detector in the utility model is designed in a spherical shape, the distance between the anode and the cathode is the same, so that the potential distribution in the detector is very uniform, and the charge collection rate of the novel detector unit is improved; the electric field distribution on the inner surface of the detector unit is more uniform due to the design of heavily doped heterocycle on the upper surface; according to the prior art, the spherical electrode can be realized by uniformly drilling holes by a laser and doping by ion diffusion.
Description
Technical Field
The utility model belongs to the technical field of semiconductor detector, especially, relate to a three-dimensional spherical electrode detector of laser drilling.
Background
At present, with the progress of society and the development of science and technology, the application of semiconductor materials has become an indispensable part of life, and detectors based on semiconductor materials are also produced. The traditional detector process is gradually improved, and in a large number of semiconductor detectors, silicon detectors are widely applied to the fields of aerospace, celestial body physics, high-energy physics, nuclear medicine, national defense and the like due to the superior performance and mature and advanced process technology of the silicon detectors.
Common types of silicon detectors include: the device comprises a silicon micro-strip detector, a silicon strip pixel detector, a silicon drift chamber detector, a three-dimensional columnar electrode detector, a three-dimensional groove electrode silicon detector and the like. With the evolution and development of various semiconductor detectors, the structure and performance of the detector are gradually improved and perfected from two dimensions to three dimensions.
The silicon detector works under reverse bias, when photons or other high-energy particles with certain energy are incident into a sensitive region of the detector, the energy is transferred to silicon-based atoms, electrons in the silicon-based atoms are transited from a valence band to a conduction band to form electron-hole pairs, the electrons drift to an anode and the holes drift to a cathode under the action of an internal and external electric field, and the electrons and the holes are collected and processed by corresponding electrodes respectively, and meanwhile, an electric signal generated by detector equipment is read by external electronic equipment.
Any three-dimensional type silicon detector device structure has the defect that the structure cannot be avoided, for example, the traditional three-dimensional groove electrode silicon detector can not completely penetrate through the whole silicon substrate because the etching substrate is required to be ensured not to fall off, and the groove electrode can only be etched to the depth of about 90% of the silicon substrate, so that compared with a laser drilling three-dimensional spherical electrode detector with the same size, the first defect of the traditional three-dimensional groove electrode silicon detector is that a dead zone exists and the proportion is overlarge. Dead zones are areas of weak or zero electric field. If the dead zone is large in the proportion of the detector substrate, it may result in poor electrical characteristics of the detector, such as uneven distribution of electric potential or electric field, and charge collection efficiency may also be affected. When the three-dimensional groove detector is processed and manufactured, due to process technical reasons, the base body cannot be completely etched to the bottom, namely, a certain thickness is reserved on the detector base body to be used as a substrate, so that the mechanical stability of a detector structural unit or an array is stabilized, and the base body is prevented from falling off due to etching. The substrate is a weak or zero electric field region, which cannot work normally when the detector device works, so that the substrate forms a dead region.
Secondly, in the conventional three-dimensional trench electrode detector, the electrode spacing is different, which is also an important reason for the reduction of the charge collection rate. The position and angle of incidence of heavy ions are different, and the charge collection rate is also different. The electric field is lowest, as incident from the position of maximum electrode spacing, and therefore has the greatest charge trapping effect on the drifting electron-hole, so that the charge collection rate is lowest here. The charge collection rate is highest if incident at the position where the electrode spacing is smallest. The difference in electrode spacing has a large effect on the stability of the detector performance.
Aiming at the defects of the traditional three-dimensional groove detector, a novel semispherical shell type electrode silicon detector is proposed in recent years, and the structural model of the detector can really solve the defects of uneven electric field potential distribution, overlarge dead zone and the like of the traditional three-dimensional groove detector. As a detector unit, the structural performance of the spherical detector is very outstanding and can be realized in theoretical simulation, but the ideal spherical structure is relatively difficult in process manufacturing.
Through the above analysis, the problems and defects of the prior art are as follows:
the performance of the existing silicon detector is low, and the ideal spherical structure is relatively difficult in process manufacturing.
The difficulty in solving the above problems and defects is:
the traditional three-dimensional groove electrode detector has the defects which cannot be avoided, and the ideal spherical detector is extremely difficult to manufacture in the process.
The significance of solving the problems and the defects is as follows:
as a detector unit, the spherical detector has outstanding structural performance, and the spherical electrode design can be realized by using the existing technologies such as laser etching, ion diffusion and the like through ingenious structural design, so that the spherical electrode design is not only existed in theoretical simulation. And the heavily doped ring is added on the upper surface, so that the electric field is more uniform, and the dead zone is reduced. These designs all lead to a significant improvement in the performance of silicon detectors.
SUMMERY OF THE UTILITY MODEL
Problem to prior art existence, the utility model provides a three-dimensional spherical electrode detector of laser drilling. The utility model provides a three-dimensional spherical electrode detector of laser drilling, aim at can utilize current technology, evenly punch through the laser instrument many times and form the slot, dope through the method of ion diffusion in the slot, finally form spherical electrode. The distance between the anode and the cathode is the same, and a plurality of heavily doped rings with equal intervals are added on the upper surface, so that the electric field potential distribution is more uniform, and the dead zone is reduced.
The utility model discloses a realize like this, a three-dimensional spherical electrode detector of laser drilling is provided with:
n-type lightly doped silicon substrate;
the middle of the upper end of the N-type lightly doped silicon substrate is doped with an N-type heavily doped anode, and the outer side of the N-type heavily doped anode is doped with a plurality of P-type heavily doped upper surface rings which are arranged at equal intervals;
and a P-type heavily doped cathode is arranged at the bottom of the N-type lightly doped silicon substrate.
Furthermore, the P-type heavily doped cathode is provided with a P-type heavily doped ring and a P-type heavily doped surface, the P-type heavily doped ring is provided with a plurality of heavily doped rings which are arranged at equal intervals, and the P-type heavily doped surface is positioned at the bottom of the P-type heavily doped ring.
Furthermore, the doping depth of the plurality of P-type heavily doped rings in the N-type lightly doped silicon matrix is gradually increased from the middle to the outside.
Furthermore, the upper end of the N-type heavily doped anode and the lower end of the P-type heavily doped cathode are respectively connected with an anode aluminum electrode contact layer and a cathode aluminum electrode contact layer.
Furthermore, the upper end of the N-type lightly doped silicon substrate is covered with SiO on the upper surface outside the anode aluminum electrode contact layer2A layer, wherein the lower end of the N-type lightly doped silicon substrate is covered with a lower surface SiO on the outer side of the cathode aluminum electrode contact layer2And (3) a layer.
Combine foretell all technical scheme, the utility model discloses the advantage that possesses and positive effect are:
the utility model provides a detector is spherical design, and positive pole is the same to the interelectrode distance, makes the interior electric potential distribution of detector very even (like figure 6), has improved the charge collection rate of novel detector unit.
The utility model provides a design that upper surface heavily adulterates the heterocyclic makes detector unit internal surface electric field distribution more even.
The utility model discloses according to current technology, through the even drilling of laser instrument, spherical electrode can be realized to the method of ion diffusion doping.
The utility model discloses it is little that the voltage is exhausted entirely, and the energy consumption is lower, and its voltage that exhausts entirely is 23V under the non-radiation condition, is less than the voltage that exhausts entirely of the three-dimensional slot detector of the same size tradition, and leakage current and electric capacity are littleer.
The utility model provides a lower surface whole face electrode's existence makes it arrange into the array more easily and reduces the blind spot greatly.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained from the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a laser drilling three-dimensional spherical electrode detector provided by an embodiment of the present invention.
Fig. 2 is a cross-sectional view of a laser drilling three-dimensional spherical electrode detector provided by an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an anode aluminum electrode contact layer according to an embodiment of the present invention.
Fig. 4 is a schematic view of a P-type heavily doped ring structure according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a cathode aluminum electrode contact layer according to an embodiment of the present invention.
In the figure: 1. an anodic aluminum electrode contact layer; 2. an N-type heavily doped anode; 3. a P-type heavily doped upper surface ring; 4. SiO on the upper surface2A layer; 5. n-type lightly doped silicon substrate; 6. a P-type heavily doped heterocycle; 7. a P-type heavily doped surface; 6 and 7 form a P-type heavily doped cathode; 8. a cathode aluminum electrode contact layer; 9. SiO on the lower surface2And (3) a layer.
Fig. 6 is a diagram illustrating the uniform potential distribution in the spherical electrode with the same distance between the anode and the cathode in the spherical electrode provided by the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
To the problem that prior art exists, the utility model provides a three-dimensional spherical electrode detector of laser drilling, it is right to combine the figure below the utility model discloses do detailed description.
As shown in fig. 1 to 5, the embodiment of the present invention provides a laser drilling three-dimensional ballThe square electrode detector is provided with a 400 mu m 200 mu m cubic column N type lightly doped silicon substrate 5, wherein the N type lightly doped silicon substrate 5 is N type lightly doped and has the doping concentration of 1 multiplied by 1012/cm3The top layer of the N-type lightly doped silicon substrate 5 is an anode aluminum electrode contact layer 1 covering the N-type heavily doped anode 2 and used as a central anode signal output point.
The upper surface of the N-type lightly doped silicon substrate 5 is provided with eight P-type heavily doped upper surface rings 3 and a central heavily doped anode, and the doping concentration of each doping ring is 1 multiplied by 1018/cm3Is heavily doped in P type with a doping depth of 1 μm and an anode with a doping concentration of 1 × 1018/cm3The doping depth of the N-type heavy doping is 1 mu m.
The cathode consists of ten etching rings (the X-axis section is an etching column) and a heavily doped lower surface, the etching rings form a P-type heavily doped ring by an ion diffusion method, and the doping concentration is 1 multiplied by 1019/cm3The lower surface has a doping concentration of 1 × 1018/cm3The doping depth of the P-type heavily doped surface is 1 mu m, and the P-type heavily doped surface plays a role in connecting the etching rings, so that the cathode is integrated. The bottom is a cathode aluminum electrode contact layer 8 covering the heavily doped lower surface as a cathode voltage input point.
The embodiment of the utility model provides an in the top layer of laser drilling three-dimensional spherical electrode detector and the place that does not have the electrode contact layer in bottom have the SiO to cover2And (3) a layer. The contact layers of the aluminum electrodes on the upper and lower surfaces have the thickness of 1 mu m, and the SiO layer on the upper surface2Layer 4 and lower surface SiO2The layers 9 are each 0.5 μm thick.
The utility model discloses a theory of operation is:
the embodiment of the utility model provides a three-dimensional spherical electrode detector of laser drilling can utilize current technology, evenly punches many times through the laser instrument and forms the slot, dopes through the method of ion diffusion in the slot, finally forms spherical electrode. The basic principle of the three-dimensional spherical electrode detector is a PN junction or a PIN junction, which is the same as the principle of many other types of detectors. The embodiment of the utility model provides a three-dimensional spherical electrode detector of laser drilling forms the PN junction between P type heavy doping etching column 6 and N type lightly doped silicon base member 5. Majority carrier diffusion, space charge form the inner electric field and form the junction region, when the particle incides middle depletion region, can produce electron-hole pair in middle depletion region, the utility model discloses an applied reverse bias voltage forms outside electric field, and the space charge district inner electric field electrical property that wherein produces is the same, has strengthened the drift of minority carrier, has hindered the diffusion of majority carrier, makes wherein electron drift to positive pole 2, and the hole drifts to negative pole 6, 7. The electrons are collected by the central anode of the upper surface of the detector, so the potential is highest here. After the current is formed, the feedback current signal is processed by an external integrated circuit, and information about the energy, the position, the motion track and the like of the incident particles can be obtained. As shown in fig. 6, the spherical electrode is provided with the same distance from the anode to the cathode, so that the potential distribution in the spherical electrode is uniform.
In the research field of the silicon detector at present, the influence of parameters such as depletion voltage, capacitance, leakage current, potential, electric field, charge collection and the like on the energy resolution, collection efficiency, noise and energy consumption of the silicon detector is generally used as an index for evaluating whether the performance of the detector is superior or not.
By comparing the characteristics of the traditional three-dimensional groove detector with the same size in the aspect of electrical characteristics, such as leakage current, depletion voltage, electric field potential distribution and the like. The advantages of the laser drilling three-dimensional spherical electrode detector in structure and performance are illustrated. The reason for the formation of the leakage current is due to the surface effect of the PN junction; the device shows that the particle charges cause mirror charges to be generated inside the device, so that the PN junction generates surface induction to form a surface depletion region, the depletion region is changed, and surface leakage current is generated. Therefore, the smaller the leakage current, the smaller the influence on the depletion region, the smaller the noise of the detector, and the higher the energy resolution. By contrast, the leakage current of the laser drilling three-dimensional spherical electrode detector is three orders of magnitude smaller than that of a three-dimensional groove detector with the same size. In addition, the electric field distribution of the detector is uniform, the electric potential distribution symmetry is high, and the property of the detector is more stable. The electron drift trajectory will be more pronounced and the energy resolution and collection efficiency will be better. By contrast, the laser-drilled three-dimensional spherical electrode detector is superior to the three-dimensional groove detector with the same size and has smaller depletion voltage. The presence of the full-area electrodes on the lower surface of the detector allows sufficient space for the application of bias voltages and allows easier array and greatly reduced dead space.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be covered within the protection scope of the present invention by those skilled in the art within the technical scope of the present invention.
Claims (5)
1. A laser-drilled three-dimensional spherical electrode detector is characterized in that the laser-drilled three-dimensional spherical electrode detector is provided with:
n-type lightly doped silicon substrate;
the middle of the upper end of the N-type lightly doped silicon substrate is doped with an N-type heavily doped anode, and the outer side of the N-type heavily doped anode is doped with a plurality of P-type heavily doped upper surface rings which are arranged at equal intervals;
and a P-type heavily doped cathode is arranged at the bottom of the N-type lightly doped silicon substrate.
2. The laser-drilled three-dimensional spherical electrode detector as claimed in claim 1, wherein the P-type heavily doped cathode is provided with a P-type heavily doped ring and a P-type heavily doped face, the P-type heavily doped ring is provided with a plurality of rings arranged at equal intervals, and the P-type heavily doped face is located at the bottom of the P-type heavily doped ring.
3. The laser drilled three-dimensional ball electrode probe of claim 2, wherein the doping depth of the plurality of P-type heavily doped rings in the N-type lightly doped silicon substrate gradually increases from the center to the outside.
4. The laser drilling three-dimensional spherical electrode detector as claimed in claim 1, wherein the upper end of the N-type heavily doped anode and the lower end of the P-type heavily doped cathode are respectively connected with an anode aluminum electrode contact layer and a cathode aluminum electrode contact layer.
5. The laser-drilled three-dimensional spherical electrode probe as claimed in claim 4, wherein the upper end of the N-type lightly doped silicon substrate is covered with SiO on the upper surface outside the anode aluminum electrode contact layer2A layer, wherein the lower end of the N-type lightly doped silicon substrate is covered with a lower surface SiO on the outer side of the cathode aluminum electrode contact layer2And (3) a layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121717974.3U CN214956900U (en) | 2021-07-27 | 2021-07-27 | Three-dimensional spherical electrode detector for laser drilling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121717974.3U CN214956900U (en) | 2021-07-27 | 2021-07-27 | Three-dimensional spherical electrode detector for laser drilling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214956900U true CN214956900U (en) | 2021-11-30 |
Family
ID=79070759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121717974.3U Active CN214956900U (en) | 2021-07-27 | 2021-07-27 | Three-dimensional spherical electrode detector for laser drilling |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214956900U (en) |
-
2021
- 2021-07-27 CN CN202121717974.3U patent/CN214956900U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108281506B (en) | Silicon drifting detector (SDD) | |
| US4024420A (en) | Deep diode atomic battery | |
| CN109273538B (en) | Silicon drift detector based on surface electric field control and design method thereof | |
| CN111969069A (en) | Multi-pixel ultra-small capacitance X-ray detection unit and detector | |
| CN214956900U (en) | Three-dimensional spherical electrode detector for laser drilling | |
| CN112071945A (en) | Spiral ring electrode silicon array detector | |
| CN216563149U (en) | Three-dimensional epitaxial injection hexagonal electrode silicon detector | |
| CN208835074U (en) | A kind of three-dimensional parallel-plate electrode semiconductor detector and detection device | |
| Wu et al. | Design and fabrication of Low Gain Avalanche Detectors (LGAD): a TCAD simulation study | |
| CN212517206U (en) | Silicon pixel detector with single-sided cathode in spiral ring structure and array thereof | |
| CN114005893A (en) | Three-dimensional epitaxial injection hexagonal electrode silicon detector | |
| CN212542438U (en) | Fan-shaped alternating silicon pixel detector | |
| CN113809200A (en) | Laser drilling three-dimensional spherical electrode detector, design method and application | |
| CN115826031A (en) | High-purity germanium drift detector | |
| CN111863845B (en) | Silicon pixel detector with spiral ring structure on single-sided cathode and array thereof | |
| CN111863846B (en) | Fan-shaped alternating silicon pixel detector | |
| CN111863848A (en) | Silicon pixel detector based on floating electrode and design method thereof | |
| CN217361595U (en) | Silicon array pixel detector capable of collecting windmill electrodes on two sides | |
| CN212380427U (en) | Multi-pixel ultra-small capacitance X-ray detection unit and detector | |
| CN210015862U (en) | Semiconductor neutron detector for nuclear radiation detection | |
| CN111223944A (en) | Full-suspension type small-capacitance detector, control method and application | |
| CN114582988A (en) | Silicon array pixel detector capable of collecting windmill electrodes on two sides | |
| CN212257400U (en) | Silicon pixel detector based on floating electrode | |
| CN111146298A (en) | Hexagonal mutual buckling type electrode three-dimensional silicon detector | |
| CN211238268U (en) | Full-suspension type small-capacitance detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |