CN210015862U - Semiconductor neutron detector for nuclear radiation detection - Google Patents
Semiconductor neutron detector for nuclear radiation detection Download PDFInfo
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- CN210015862U CN210015862U CN201920811529.XU CN201920811529U CN210015862U CN 210015862 U CN210015862 U CN 210015862U CN 201920811529 U CN201920811529 U CN 201920811529U CN 210015862 U CN210015862 U CN 210015862U
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Abstract
The utility model relates to the field of semiconductor technology, concretely relates to a semiconductor neutron detector for nuclear radiation detects. The semiconductor neutron detector for nuclear radiation detection includes: a substrate including an upper portion and a lower portion integrally connected; the A neutron conversion layer is formed on the upper portion of the substrate, and an A metal layer is arranged on the upper surface of the A neutron conversion layer; the B neutron conversion layer is formed on the lower portion of the substrate, and a B metal layer is arranged on the lower surface of the B neutron conversion layer; and the electron collecting layer is formed on the upper part of the substrate at the periphery of the A neutron conversion layer. The semiconductor neutron detector for nuclear radiation detection has the advantages of being capable of improving detection efficiency and radiation energy resolution, low in power consumption and fast in time response.
Description
Technical Field
The utility model relates to the field of semiconductor technology, concretely relates to a semiconductor neutron detector for nuclear radiation detects.
Background
Neutron detection plays a special role in particle detection technology, and is widely applied to subjects such as particle physics, nuclear physics, medical physics, astronomical physics, archaeology, geological exploration and the like.
The existing detector takes a semiconductor diode structure as a main body, and is added with a conversion material (A)10B、6LiF) for the purpose of detecting neutron particles. With the development of scientific technology, higher requirements are made on the detection sensitivity, detection efficiency and power consumption of the detector, however, the nuclear radiation detector in the prior art is difficult to meet the requirements of scientific development.
Disclosure of Invention
In order to solve the not enough of existence among the prior art, the utility model provides a semiconductor neutron detector for nuclear radiation detection, a semiconductor neutron detector for nuclear radiation detection has can improve detection efficiency and radiant energy resolution ratio to have the characteristics that low-power consumption and time response are fast.
According to the utility model provides a technical scheme, a semiconductor neutron detector for nuclear radiation detection includes:
a substrate including an upper portion and a lower portion integrally connected;
the A neutron conversion layer is formed on the upper portion of the substrate, and an A metal layer is arranged on the upper surface of the A neutron conversion layer;
the B neutron conversion layer is formed on the lower portion of the substrate, and a B metal layer is arranged on the lower surface of the B neutron conversion layer;
and the electron collecting layer is formed on the upper part of the substrate at the periphery of the A neutron conversion layer.
Further, the A neutron conversion layer comprises a plurality of groove structures arranged at intervals, the groove structures extend inwards from the upper surface of the substrate to the inside of the substrate, and neutron conversion materials are filled in the groove structures;
and a P-type shallow diffusion layer is formed on the surface of the groove structure and the upper surface of the A neutron conversion layer between two adjacent groove structures.
Further, the B neutron conversion layer comprises a plurality of groove structures arranged at intervals, the groove structures extend inwards from the lower surface of the substrate to the inside of the substrate, and neutron conversion materials are filled in the groove structures;
and a P-type shallow diffusion layer is formed on the surface of the groove structure and the upper surface of the B neutron conversion layer between two adjacent groove structures.
Further, the electron collecting layer is in a closed ring shape.
Furthermore, the electron collection layer comprises a C metal layer and an N-type injection layer, the N-type injection layer extends from the upper surface of the substrate to the inside of the substrate, and the C metal layer is disposed on the N-type injection layer.
Further, an insulating layer is formed on the upper surface of the substrate between the electron collecting layer and the A neutron conversion layer.
Further, an insulating layer is formed on the upper surface of the substrate at the periphery of the electron collecting layer.
Further, the substrate is made of one of Si, GaAs, GaN, AlN, SiC, Ge, SiGe or single crystal diamond.
From the foregoing, it can be seen that the utility model provides a semiconductor neutron detector for nuclear radiation detects, compare with prior art and possess following advantage:
one of which, the quantity that the structure of two-sided neutron conversion layer can improve neutron conversion can improve the utility model discloses a work efficiency.
And secondly, double-sided neutron conversion layers are adopted, groove structures are arranged in each neutron conversion layer at intervals, neutron conversion materials are filled in the groove structures, the neutron detector with the structure combines positive and negative electrode regions of a diode introduced into the upper surface to facilitate integration and adjustment of working voltage, and the coverage area of a metal layer structure is adjusted on the lower surface to take the working voltage into consideration, so that the detection efficiency is improved, and the neutron detector has the characteristics of low power consumption, high energy resolution, quick time response and the like.
Drawings
Fig. 1 is a schematic longitudinal sectional view of the present invention.
Fig. 2 is a schematic sectional view of the section a-a in fig. 1.
Fig. 3 is a schematic cross-sectional view of the section B-B in fig. 1.
100. The semiconductor device comprises a substrate, 200A neutron conversion layer, 210A metal layer, 220 trench structure, 230P type shallow diffusion layer, 300B neutron conversion layer, 310B metal layer, 400 electron collection layer, 410C metal layer, 420N type injection layer and 500 insulating layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings. In which like parts are designated by like reference numerals. It should be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings. The terms "inner" and "outer" are used to refer to directions toward and away from, respectively, the geometric center of a particular component.
The utility model provides a semiconductor neutron detector for nuclear radiation detection, as shown in fig. 1~ 3, a semiconductor neutron detector for nuclear radiation detection includes:
a substrate 100, wherein the substrate 100 includes an upper portion and a lower portion integrally connected, and the substrate 100 includes an upper surface and a lower surface, the upper surface of the upper portion of the substrate 100 is the upper surface of the substrate 100, and the lower surface of the lower portion of the substrate 100 is the lower surface of the substrate 100;
the A neutron conversion layer 200, wherein the A neutron conversion layer 200 is formed on the upper part of the substrate 100, and an A metal layer 210 is arranged on the upper surface of the A neutron conversion layer 200; neutrons in the a neutron conversion layer 200 can be converted into other charged particles by reaction; the charged particles generate electron-hole pairs after passing through the diode formed by the P-type shallow diffusion layer 230 and the substrate 100;
a B neutron conversion layer 300, wherein the B neutron conversion layer 300 is formed at the lower part of the substrate 100, and a B metal layer 310 is arranged on the lower surface of the B neutron conversion layer 300; neutrons in the B neutron conversion layer 300 can be converted into other charged particles by reaction; the charged particles generate electron-hole pairs after passing through the diode formed by the P-type shallow diffusion layer 230 and the substrate 100;
and an electron collection layer 400, wherein the electron collection layer 400 is formed on the substrate 100 at the periphery of the A neutron conversion layer 200. The electron collection layer 400 serves to collect electrons generated in the a neutron conversion layer 200 and the B neutron conversion layer 300.
It can be understood that the structure of the double-sided neutron conversion layer can improve the quantity of neutron conversion, and can improve the working efficiency of the utility model.
The A neutron conversion layer 200 comprises a plurality of groove structures 220 arranged at intervals, the groove structures 220 extend from the upper surface of the substrate 100 to the inside of the substrate 100, and neutron conversion materials are filled in the groove structures 220; the neutron conversion material can be 10B or 6LiF, and the neutron conversion material absorbs nuclear radiation and can release charged particles under the action of neutron particles.
The surface of the trench structure 220 and the upper surface of the a neutron conversion layer 200 between two adjacent trench structures 220 form a P-type shallow diffusion layer 230.
The B-neutron conversion layer 300 comprises a plurality of groove structures 220 arranged at intervals, the groove structures 220 extend from the lower surface of the substrate 100 to the inside of the substrate 100, and neutron conversion materials are filled in the groove structures 220;
the surface of the trench structure 220 and the upper surface of the B neutron conversion layer 300 between two adjacent trench structures 220 form a P-type shallow diffusion layer 230.
The electron collecting layer 400 includes a C metal layer 410 and an N-type injection layer 420, the N-type injection layer 420 extends from the upper surface of the substrate 100 to the inside of the substrate 100, and the C metal layer 410 is disposed on the N-type injection layer 420.
An insulating layer 500 is formed on the upper surface of the substrate 100 between the electron collection layer 400 and the a-neutron conversion layer 200, and the insulating layer 500 is preferably a silicon dioxide layer. The insulating layer 500 may reduce surface states, thereby reducing surface leakage currents.
It should be explained that the nuclear radiation detection can be realized when a reverse bias or 0 bias is applied between the P-type shallow diffusion region and the N-type implantation region. The N-type injection region is a closed ring structure distributed at the periphery of the P-type shallow diffusion region, the P-type shallow diffusion region is favorable for modulating an electric field, the thickness of a surface dead zone is reduced, and the efficiency of nuclear radiation entering the inside of a semiconductor device is improved.
It can be understood that double-sided neutron conversion layers are adopted, groove structures 220 are arranged in each neutron conversion layer at intervals, neutron conversion materials are filled in the groove structures 220, the neutron detector with the structure combines positive and negative electrode regions of an upper surface lead-in diode to facilitate integration and adjustment of working voltage, the coverage area of a metal layer structure is adjusted by the lower surface to give consideration to working voltage adjustment, the double-sided groove structures improve the contact area of the neutron conversion materials, the detection efficiency of the neutron detector is improved, and the neutron detector has the characteristics of low power consumption, high energy resolution, fast time response and the like.
Those of ordinary skill in the art will understand that: the above description is only for the specific embodiments of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A semiconductor neutron detector for nuclear radiation detection, the semiconductor neutron detector for nuclear radiation detection comprising:
a substrate (100), said substrate (100) comprising an upper portion and a lower portion that are integrally connected;
the A neutron conversion layer (200), wherein the A neutron conversion layer (200) is formed on the upper portion of the substrate (100), and an A metal layer (210) is arranged on the upper surface of the A neutron conversion layer (200);
the B neutron conversion layer (300), the B neutron conversion layer (300) is formed on the lower portion of the substrate (100), and a B metal layer (310) is arranged on the lower surface of the B neutron conversion layer (300);
an electron collection layer (400), wherein the electron collection layer (400) is formed on the upper portion of the substrate (100) at the periphery of the A neutron conversion layer (200).
2. The semiconductor neutron detector for nuclear radiation detection according to claim 1, wherein the a neutron conversion layer (200) comprises a plurality of spaced trench structures (220), the trench structures (220) extend from the upper surface of the substrate (100) to the inside of the substrate (100), and the trench structures (220) are filled with neutron conversion material;
and a P-type shallow diffusion layer (230) is formed on the surface of the groove structure (220) and the upper surface of the A neutron conversion layer (200) between two adjacent groove structures (220).
3. The semiconductor neutron detector for nuclear radiation detection according to claim 1 or 2, characterized in that the B neutron conversion layer (300) comprises a plurality of spaced trench structures (220), the trench structures (220) extend from the lower surface of the substrate (100) to the inside of the substrate (100), and the trench structures (220) are filled with neutron conversion material;
and a P-type shallow diffusion layer (230) is formed on the surface of the trench structure (220) and the upper surface of the B neutron conversion layer (300) between two adjacent trench structures (220).
4. The semiconductor neutron detector for nuclear radiation detection of claim 1, wherein the electron collection layer (400) is in the shape of a closed ring.
5. The semiconductor neutron detector for nuclear radiation detection of claim 1, wherein the electron collection layer (400) comprises a C metal layer (410) and an N-type injection layer (420), the N-type injection layer (420) extending inward into the substrate (100) from an upper surface of the substrate (100), the C metal layer (410) being disposed on the N-type injection layer (420).
6. The semiconductor neutron detector for nuclear radiation detection according to claim 1, characterized in that an insulating layer (500) is formed on the upper surface of the substrate (100) between the electron collection layer (400) and the a neutron conversion layer (200).
7. The semiconductor neutron detector for nuclear radiation detection according to claim 1 or 6, characterized in that an insulating layer (500) is formed on the upper surface of the substrate (100) at the periphery of the electron collection layer (400).
8. The semiconductor neutron detector for nuclear radiation detection according to claim 1, characterized in that the substrate (100) employs one of Si, GaAs, GaN, AlN, SiC, Ge, SiGe or single crystal diamond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920811529.XU CN210015862U (en) | 2019-05-31 | 2019-05-31 | Semiconductor neutron detector for nuclear radiation detection |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920811529.XU CN210015862U (en) | 2019-05-31 | 2019-05-31 | Semiconductor neutron detector for nuclear radiation detection |
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| CN210015862U true CN210015862U (en) | 2020-02-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114019561A (en) * | 2021-11-08 | 2022-02-08 | 中国原子能科学研究院 | Neutron detector and detection system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114019561A (en) * | 2021-11-08 | 2022-02-08 | 中国原子能科学研究院 | Neutron detector and detection system |
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