CN113990965A - Semiconductor device with mixed graphene electrode and manufacturing method thereof - Google Patents
Semiconductor device with mixed graphene electrode and manufacturing method thereof Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 106
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 106
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract description 14
- 238000002834 transmittance Methods 0.000 abstract description 12
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 210000003850 cellular structure Anatomy 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 17
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention relates to a semiconductor device of a mixed graphene electrode and a manufacturing method thereof, wherein a cellular structure of the device comprises: the N-type epitaxial layer is arranged on the surface of the N-type substrate, the graphene electrode and the metal electrode are arranged on the surface of the N-type epitaxial layer and form Schottky contact with the N-type epitaxial layer, and the metal back electrode is arranged below the N-type substrate and forms ohmic contact with the N-type substrate. The graphene has extremely high light transmittance and adjustable work function, and forms a mixed electrode with metal with higher work function on the surface of the N-type epitaxial layer, so that the dark current of a device is reduced, the noise is reduced, the sensitivity is improved, the weak signal detection capability is enhanced, the wavelength detection range is enlarged, and the performance stability is improved. The starting voltage of the device in the forward conducting state can be reduced, the leakage current in the blocking state can be reduced, and the breakdown voltage can be improved. The device can be applied to the photoelectric field and the power field.
Description
Technical Field
The invention belongs to the field of semiconductor devices, and particularly relates to a semiconductor device with a mixed graphene electrode and a manufacturing method thereof.
Background
The power consumption of a schottky diode depends on the forward voltage drop and the reverse leakage current, both of which should be as low as possible to reduce the device power consumption. The schottky barrier height needs to be low to meet the forward voltage reduction of the device, and the schottky barrier should be as high as possible to meet the low reverse leakage current of the device. However, only one metal in direct contact with the surface of the epitaxial layer of a conventional schottky diode, which has a unique work function, can generate only a unique schottky barrier with the semiconductor, so the two requirements of having a small barrier height in the forward state of the device and a large barrier height in the reverse state of the device are conflicting. In the photoelectric field, the traditional photoelectric detector adopts a metal-semiconductor structure, the light transmittance of metal is low, the wavelength range of detectable light is small, and meanwhile, the photoelectric detector with the low Schottky barrier has the defects of large dark current, strong noise and weak detection capability on weak signals. Graphene is a two-dimensional material with excellent force, heat, light, electricity and other properties, has excellent conductivity, and has electron mobility exceeding 1.5 x 104cm2·V-1·s-1Is more than 10 times of intrinsic silicon and is onlyThe absorption rate of the layer graphene to light is only 2.3%, the graphene has the characteristics of excellent conductivity, light transmission and adjustable work function, has great potential in the fields of photoelectric detection and power devices, and can solve the problems in the photoelectric field and the power field. The device of the invention provides a novel structure of a mixed graphene electrode, and simultaneously provides a device manufacturing process compatible with the traditional process.
Disclosure of Invention
The technical problem is as follows: in order to solve the problems, the invention provides the semiconductor device of the mixed graphene electrode and the manufacturing method thereof, wherein the semiconductor device is compatible with the existing semiconductor device manufacturing process, can reduce the starting voltage of the device in a forward conducting state, reduce the leakage current in a blocking state, reduce the dark current of the device, enhance the weak signal detection capability and enlarge the detection wavelength range.
The technical scheme is as follows: the semiconductor device of the mixed graphene electrode adopted by the invention comprises: the N-type substrate is provided with a back electrode metal on one surface, an N-type buffer layer on the other surface, an N-type epitaxial layer on the N-type buffer layer, and a graphene electrode and a high-work-function metal electrode which are in Schottky contact with the N-type epitaxial layer are arranged on the surface of the N-type epitaxial layer.
Wherein the content of the first and second substances,
the upper surface of the N-type epitaxial layer is provided with a plurality of bulges, the graphene electrode is positioned at the tops of the bulges, and the high-work-function metal electrode is positioned on the side surfaces of the bulges and the upper surface of the N-type epitaxial layer.
The high-work-function metal electrode is embedded into the upper surface of the N-type epitaxial layer, and the graphene electrode which forms Schottky contact with the N-type epitaxial layer covers the high-work-function metal electrode and the upper surface of the N-type epitaxial layer.
The material of the graphene electrode is not limited to single-layer graphene or multi-layer graphene, or a two-dimensional material having graphene characteristics.
The manufacturing method of the semiconductor device with the mixed graphene electrode comprises the following steps:
and 4, forming high-work-function metal electrodes which are closely contacted with the graphene electrodes and are arranged at intervals on the N-type epitaxial layer by using a sputtering process and a metal stripping process to form the mixed graphene electrode.
Wherein the content of the first and second substances,
the high work function metal electrode used in step 4 is a metal with a work function higher than the fermi level of graphene, and is not limited to other materials with a work function higher than that of graphene and can be used as an electrode.
And 4, overlapping, partially overlapping or completely covering the graphene and the high-work-function metal electrode on the structure of the mixed graphene electrode.
Has the advantages that: compared with the prior device structure and manufacturing technology, the invention has the following advantages:
(1) the mixed electrode composed of the graphene and the high-work-function metal enables the device to have high light transmittance and low dark current. The absorption rate of the single-layer graphene to light is only 2.3%, the light transmittance of the single-layer graphene to light in a visible light to near infrared band is 97.7%, and the light transmittance of the single-layer graphene to light in an ultraviolet band exceeds 90%, so that the graphene mixed electrode has excellent light transmittance, and the device has a large wavelength detection range. The dark current of the Schottky device is highly related to the barrier of the Schottky contact, and the Schottky contact formed by the high-work-function metal and the N-type epitaxial layer has smaller dark current. The size of dark current of the mixed electrode consisting of the low-work-function graphene and the high-work-function metal is mainly determined by the Schottky junction formed by the high-work-function metal and the N-type epitaxial layer, so that the graphene mixed electrode enables a device to have small dark current, low noise and strong weak signal detection capability. Meanwhile, the graphene Schottky junction has extremely high photoelectric conversion efficiency. This structure can be used for a photo-detection diode.
(2) The mixed electrode composed of the graphene and the high-work-function metal enables the device to have low forward starting voltage drop, low reverse leakage current and high breakdown voltage. The forward voltage drop of the diode is mainly determined by the Schottky junction with low barrier, the work function of the graphene is low, the Schottky junction barrier formed by the N-type epitaxial layer is low, and therefore the forward opening voltage of the mixed electrode device is reduced. When the device is in a reverse bias state, a Schottky junction formed by the high-work-function metal and the N-type epitaxial layer is expanded on one side of the N-type epitaxial layer to form a thick depletion layer, so that the reverse leakage current of the device is reduced, and meanwhile, the expanded depletion layer can play a role in protecting a low-barrier region and increasing the breakdown voltage of the device. The hybrid graphene electrode semiconductor device has a low forward turn-on voltage drop compared to a conventional schottky diode formed of a high work function metal, and has a lower reverse leakage current and a larger breakdown voltage compared to a conventional schottky diode formed of a low work function metal. Meanwhile, the low forward turn-on voltage drop and the low reverse leakage current can greatly reduce the power consumption of the device. This structure can be used for power diodes.
(3) The graphene mixed electrode composed of graphene and high-work-function metal adopts graphene as an electrode material, the electron saturation velocity is high, and the electron mobility can reach 2.5 multiplied by 104cm2V. s) conductivity of 106S/m is an excellent conductive material compared with other non-metallic materials with high light transmittance and low work function, and is suitable for being used as an electrode. Meanwhile, compared with the traditional single metal electrode, the work function of the graphene can be regulated, and when a Schottky heterojunction is formed between the graphene and the N-type epitaxial layer, the Schottky junction parameters such as a Schottky barrier and an ideal factor can be regulated.
Drawings
Fig. 1 is a cross-sectional view of a cell structure of a semiconductor device having a hybrid graphene electrode according to the present invention.
Fig. 2 is a schematic view of the manufacturing method of the present invention forming a back electrode and an N-type buffer layer on an N-type substrate using a sputtering process.
FIG. 3 is a schematic diagram of an N-type epitaxial layer formed on an N-type buffer layer according to the manufacturing method of the present invention.
Fig. 4 is a schematic diagram of the manufacturing method of the present invention, in which graphene is formed on an N-type epitaxial layer by a transfer method and a portion of the graphene is removed by a plasma reactive etching technique.
Fig. 5 is a first layout topology of the semiconductor device of the hybrid graphene electrode of the present invention.
Fig. 6 is a second layout topology of the semiconductor device of the hybrid graphene electrode of the present invention.
Fig. 7 is a third layout topology of the semiconductor device of the hybrid graphene electrode of the present invention.
Fig. 8 is a second cross-sectional view structure of a semiconductor device cell with a hybrid graphene electrode according to the present invention.
Fig. 9 is a third cross-sectional view structure of a unit cell of a semiconductor device of a hybrid graphene electrode according to the present invention.
The specific implementation mode is as follows:
example 1:
the semiconductor device of a hybrid graphene electrode of the present invention includes: the N-type substrate comprises an N-type substrate 1, wherein back electrode metal 6 is arranged on one surface of the N-type substrate 1, an N-type buffer layer 2 is arranged on the other surface of the N-type substrate 1, an N-type epitaxial layer 3 is arranged on the N-type buffer layer 2, and a graphene electrode 4 and a high-work-function metal electrode 5 which form Schottky contact with the N-type epitaxial layer 3 are arranged on the surface of the N-type epitaxial layer 3.
The upper surface of the N-type epitaxial layer 3 is provided with a plurality of bulges, the graphene electrode 4 is positioned at the tops of the bulges, and the high-work-function metal electrode 5 is positioned on the side surfaces of the bulges and the upper surface of the N-type epitaxial layer 3.
The high-work-function metal electrode 5 is embedded into the upper surface of the N-type epitaxial layer 3, and the graphene electrode 4 which forms Schottky contact with the N-type epitaxial layer 3 covers the high-work-function metal electrode 5 and the upper surface of the N-type epitaxial layer 3.
The material of the graphene layer electrode 4 is not limited to single-layer graphene or multi-layer graphene, or a two-dimensional material having graphene characteristics.
The manufacturing method of the structure comprises the following steps:
and 4, forming high-work-function metal 5 which is in close contact with the graphene 4 and is arranged at intervals on the N-type epitaxial layer 3 by using a sputtering process and a metal stripping process to form the mixed graphene electrode.
This structure can be used for a photo-detection diode. Since graphene has excellent light transmittance, the light transmittance of the graphene is 97.7% in the visible light to near infrared band and exceeds 90% in the ultraviolet band, the mixed electrode photodiode has better light transmittance and a larger wavelength detection range compared with a traditional metal-semiconductor Schottky junction photodiode. Meanwhile, the graphene-semiconductor heterojunction has extremely high photoelectric conversion efficiency. While the dark current of the photodiode is related to the work function of the schottky metal, the high barrier schottky contact has less dark current. The size of dark current of the mixed electrode consisting of the graphene with low potential barrier and the metal with high work function is mainly determined by the metal with high work function. Therefore, compared with the traditional low Schottky barrier photodiode, the mixed electrode photodiode has small dark current, low noise and strong weak signal detection capability.
Example 2:
the structure of the invention is the same as the embodiment 1, and the manufacturing method of the structure comprises the following steps:
and 4, forming high-work-function metal 5 which is in close contact with the graphene 4 and is arranged at intervals on the N-type epitaxial layer 3 by using a sputtering process and a metal stripping process to form the mixed graphene electrode.
This structure can be used for power diodes. The mixed electrode composed of the graphene and the high-work-function metal enables the diode to have low forward starting voltage drop, low reverse leakage current and high breakdown voltage. The forward turn-on voltage drop of the mixed electrode diode is mainly determined by the Schottky junction with low potential barrier, so that the Schottky junction formed by the graphene and the semiconductor with low work function enables the diode to have low forward turn-on voltage drop when the diode is turned on in a forward direction. When the diode is in a reverse bias state, a thick depletion layer is formed on one side of the semiconductor by a Schottky junction formed by the high-work-function metal and the semiconductor in an expanding mode, reverse leakage current of the device is reduced, meanwhile, the expanded depletion layer can play a role in protecting a low-barrier region, and breakdown voltage of the device is increased. Thus, the hybrid electrode diode has a low forward turn-on voltage drop compared to conventional high schottky barrier power diodes, and a lower reverse leakage and a greater breakdown voltage compared to conventional low schottky barrier power diodes. At the same time, low turn-on voltage drop and low reverse leakage, which all result in a great reduction in power consumption of the device.
The working principle and the working process of the invention are as follows:
the cell structure of the semiconductor device with the mixed graphene electrode comprises an N-type substrate N-type buffer layer and an N-type epitaxial layer, wherein the N-type epitaxial layer is provided with a graphene electrode and a metal electrode which form Schottky contact with the N-type buffer layer, and a metal back electrode which forms ohmic contact with the substrate is arranged below the substrate.
Since graphene has excellent light transmittance and the absorption rate of single-layer graphene to light is only 2.3%, the graphene mixed electrode has high light transmittance and a large wavelength detection range. The dark current of the Schottky diode is related to the barrier height of the Schottky junction, the diode with the high barrier of the Schottky junction has a smaller dark current, the mixed electrode is composed of the graphene with low work function and the metal with high work function, and the magnitude of the dark current is mainly determined by the Schottky junction formed by the metal with high work function and the semiconductor, so that the graphene mixed electrode can reduce the dark current of the device, reduce noise and enhance the weak signal detection capability.
Meanwhile, the forward turn-on voltage drop of the mixed electrode device is mainly determined by the Schottky junction of the low barrier, so that the Schottky junction formed by the graphene with low work function and the semiconductor enables the device to have low forward turn-on voltage drop when the device is turned on in the forward direction. When the device is in a reverse bias state, a thick depletion layer is formed on one side of the semiconductor by a Schottky junction formed by the high-work-function metal and the semiconductor in an expanding mode, reverse leakage current of the device is reduced, meanwhile, the effect of protecting a low-potential barrier region is achieved, and breakdown voltage is increased. Meanwhile, the low starting voltage and the low reverse leakage can greatly reduce the power consumption of the device.
Claims (7)
1. A semiconductor device with a hybrid graphene electrode, comprising: the N-type substrate comprises an N-type substrate (1), back electrode metal (6) is arranged on one surface of the N-type substrate (1), an N-type buffer layer (2) is arranged on the other surface of the N-type substrate (1), an N-type epitaxial layer (3) is arranged on the N-type buffer layer (2), and a graphene electrode (4) and a high-work-function metal electrode (5) which form Schottky contact with the N-type epitaxial layer (3) are arranged on the surface of the N-type epitaxial layer (3).
2. The semiconductor device with the hybrid graphene electrode according to claim 1, wherein the upper surface of the N-type epitaxial layer (3) is provided with a plurality of protrusions, the graphene electrode (4) is positioned at the tops of the protrusions, and the high work function metal electrode (5) is positioned at the side surfaces of the protrusions and the upper surface of the N-type epitaxial layer (3).
3. The semiconductor device with the hybrid graphene electrode according to claim 1, wherein the high work function metal electrode (5) is embedded in the upper surface of the N-type epitaxial layer (3), and the graphene electrode (4) forming schottky contact with the N-type epitaxial layer (3) covers the high work function metal electrode (5) and the upper surface of the N-type epitaxial layer (3).
4. The semiconductor device with a hybrid graphene electrode according to claim 1, 2 or 3, wherein the material of the graphene electrode (4) is not limited to single-layer graphene or multi-layer graphene, or a two-dimensional material having graphene characteristics.
5. A method for manufacturing a semiconductor device having a hybrid graphene electrode according to claim 1, 2 or 3,
step 1, taking an N-type substrate (1), manufacturing a back electrode metal (6) on one surface of the N-type substrate (1) by using a sputtering process, growing an N-type buffer layer (2) on the other surface of the N-type substrate (1),
step 2, forming an N-type epitaxial layer (3) on the surface of the N-type buffer layer (2),
step 3, transferring the graphene to the surface of the N-type epitaxial layer (3) by using a transfer method, etching off part of the graphene by using a plasma reaction etching technology, leaving graphene electrodes (4) distributed at intervals,
and 4, forming high-work-function metal electrodes (5) which are closely contacted with the graphene electrode (4) and are arranged at intervals on the N-type epitaxial layer (3) by using a sputtering process and a metal stripping process to form the mixed graphene electrode.
6. The method of manufacturing a semiconductor device with a hybrid graphene electrode according to claim 5, wherein the high work function metal electrode (5) used in step 4 is a metal with a work function higher than the Fermi level of graphene, and is not limited to other materials with a work function higher than graphene and capable of being used as an electrode.
7. The method for manufacturing a semiconductor device with a hybrid graphene electrode according to claim 5, wherein the hybrid graphene electrode in the step 4 is exactly overlapped, partially overlapped or completely covered with the high work function metal electrode.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114883442A (en) * | 2022-05-12 | 2022-08-09 | 东华理工大学 | CsPbBr 3 Nuclear radiation detector and manufacturing method thereof |
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| CN106935661A (en) * | 2017-01-23 | 2017-07-07 | 西安电子科技大学 | Vertical-type Schottky diode and preparation method thereof |
| KR20170119511A (en) * | 2016-04-19 | 2017-10-27 | 포항공과대학교 산학협력단 | Doped graphene electrode and Method of forming the same |
| CN107369720A (en) * | 2017-07-05 | 2017-11-21 | 西安交通大学 | A kind of p-type diamond height barrier Schottky diode and preparation method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103840017A (en) * | 2014-03-06 | 2014-06-04 | 常熟理工学院 | Grapheme silicon-based solar cell and manufacture method thereof |
| KR20170119511A (en) * | 2016-04-19 | 2017-10-27 | 포항공과대학교 산학협력단 | Doped graphene electrode and Method of forming the same |
| CN106298977A (en) * | 2016-10-26 | 2017-01-04 | 苏州捷芯威半导体有限公司 | Diode anode structure, longitudinal diode and transverse diode |
| CN106935661A (en) * | 2017-01-23 | 2017-07-07 | 西安电子科技大学 | Vertical-type Schottky diode and preparation method thereof |
| CN107369720A (en) * | 2017-07-05 | 2017-11-21 | 西安交通大学 | A kind of p-type diamond height barrier Schottky diode and preparation method thereof |
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| CN114883442B (en) * | 2022-05-12 | 2023-05-12 | 东华理工大学 | CsPbBr 3 Nuclear radiation detector and preparation method thereof |
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